CN111130370B - Asymmetric device half-bridge power module suitable for MMC converter valve - Google Patents
Asymmetric device half-bridge power module suitable for MMC converter valve Download PDFInfo
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- CN111130370B CN111130370B CN202010025692.0A CN202010025692A CN111130370B CN 111130370 B CN111130370 B CN 111130370B CN 202010025692 A CN202010025692 A CN 202010025692A CN 111130370 B CN111130370 B CN 111130370B
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/483—Converters with outputs that each can have more than two voltages levels
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02J—CIRCUIT ARRANGEMENTS OR SYSTEMS FOR SUPPLYING OR DISTRIBUTING ELECTRIC POWER; SYSTEMS FOR STORING ELECTRIC ENERGY
- H02J3/00—Circuit arrangements for ac mains or ac distribution networks
- H02J3/36—Arrangements for transfer of electric power between ac networks via a high-tension dc link
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/42—Conversion of dc power input into ac power output without possibility of reversal
- H02M7/44—Conversion of dc power input into ac power output without possibility of reversal by static converters
- H02M7/48—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/53—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/537—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters
- H02M7/5387—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration
- H02M7/5388—Conversion of dc power input into ac power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only, e.g. single switched pulse inverters in a bridge configuration with asymmetrical configuration of switches
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E60/00—Enabling technologies; Technologies with a potential or indirect contribution to GHG emissions mitigation
- Y02E60/60—Arrangements for transfer of electric power between AC networks or generators via a high voltage DC link [HVCD]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
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Abstract
In two IGBTs of the half-bridge power module, the IGBT directly connected with two outgoing lines of the power module is selected as a lower tube IGBT, and the other IGBT of the power module is selected as an upper tube IGBT. The asymmetric device is that the types of a lower tube IGBT and an upper tube IGBT are different, and the nominal current grade of the selected lower tube IGBT is larger than that of the selected upper tube IGBT; the asymmetric device is also characterized in that the types of a lower tube diode and an upper tube diode D1 are different, the nominal current grade of the selected lower tube diode is larger than that of the upper tube diode D1, and the lower tube diode has strong surge current tolerance capacity and can independently or mainly bear short-circuit current under the fault working condition. The current margin and the junction temperature margin of the lower tube IGBT and the diode can be increased under the steady-state working condition of the power module; when the power module is in a fault working condition, the lower tube diode bears fault short-circuit current, and a thyristor and drive thereof do not need to be additionally introduced.
Description
Technical Field
The invention relates to the technical field of flexible direct current transmission systems, in particular to an asymmetric device half-bridge power module suitable for an MMC converter valve.
Background
The voltage source type direct current transmission system, also called as a flexible direct current transmission system (VSC-HVDC), has the advantages that the active power/reactive power of a converter station can be independently controlled, a huge alternating current filter is not needed, black start of a power grid can be supported, power supply to weak grids such as islands/wind power plants is supported, and the like, and is an effective method for solving the problems of grid connection and consumption of regional new energy in China. At present, a modular multi-converter (MMC converter) is one of the main methods for realizing a voltage source type direct current transmission system, and each bridge arm of the converter and the whole system are built in a mode of cascading a plurality of identical power modules. The half-bridge power module is the most commonly used topological structure of the existing flexible-direct engineering power module due to simple structure and few used devices.
Different from other electric equipment such as a frequency converter and a reactive power compensation device, the load of the power device in the actual steady-state work of the MMC flexible-direct converter valve cascaded power module has the characteristic of load asymmetry. Taking a half-bridge power module as an example, the following is presented: when the converter valve works in an inversion working condition, the IGBT (insulated gate bipolar translator) lower tube of the power module bears the maximum load current; when the converter valve works under the rectification working condition, the tube diode under the power module bears the maximum load current. In addition, when extreme fault conditions such as bipolar short circuit and the like occur in the converter valve, fault short circuit current is borne only by the lower tube diode.
To this kind of steady state operating mode and the asymmetric characteristic of trouble operating mode load, on half-bridge power module upper and lower pipe IGBT and upper and lower pipe diode lectotype design, the present industry does not take the special design of pertinence, often upper and lower pipe IGBT and upper and lower pipe diode adopt the design of symmetrical device, and upper and lower pipe IGBT model are the same completely promptly, and upper and lower pipe diode model are the same completely, and the not enough that this kind of method brought is:
(1) because the load is asymmetric, in actual operation, the current allowance and the junction temperature allowance of the lower tube IGBT are smaller than those of the upper tube IGBT, and the current allowance and the junction temperature allowance of the lower tube diode are smaller than those of the upper tube diode;
(2) when the bipolar short circuit extreme fault working condition occurs, the lower tube diode cannot bear the short-circuit current alone due to the fact that the short-circuit current is large, and a thyristor with larger surge current bearing capacity needs to be additionally introduced to conduct shunting so as to guarantee the safety of the lower tube diode. In addition, a special driving circuit is required to be designed to ensure that the thyristor can be reliably triggered after a fault occurs.
Therefore, the half-bridge power module is not designed according to the working condition of the device, an additional control circuit and a power device are required, the complexity of the power module is obviously increased, and the junction temperature allowance between the upper tube power device and the lower tube power device is greatly different. To solve this problem, a half-bridge power module is needed that is simple and that improves steady-state and transient reliability.
Disclosure of Invention
In order to solve the technical problems in the background art and aim at the characteristic that the load of a flexible direct current converter valve power module device is asymmetric, the invention provides an asymmetric device half-bridge power module suitable for an MMC converter valve, which can improve the current margin and junction temperature margin of a lower tube IGBT and a diode under the steady-state working condition of the power module; when the power module is in a fault working condition, the lower tube diode bears fault short-circuit current, and a thyristor and drive thereof do not need to be additionally introduced. The invention has the characteristics of simple design, safety and reliability.
In order to achieve the purpose, the invention adopts the following technical scheme:
a power device of the half-bridge power module comprises an upper tube IGBT, an upper tube diode, a lower tube IGBT and a lower tube diode; the upper tube IGBT and the upper tube diode are connected in parallel, the lower tube IGBT and the lower tube diode are connected in parallel, the upper tube IGBT and the lower tube IGBT are connected in series and then connected in parallel with the direct current capacitor, one end of the direct current capacitor is led out to be used as an outgoing line of the module, and the connecting point of the two IGBTs is led out to be used as the other outgoing line of the module.
In the two IGBTs of the half-bridge power module of the asymmetric device, the IGBT directly connected with the two outgoing lines of the power module is selected as a lower tube IGBT, and the other IGBT of the power module is selected as an upper tube IGBT.
The asymmetric device is a lower tube IGBT and an upper tube IGBT which are different in model, and the nominal current grade of the selected lower tube IGBT is larger than that of the selected upper tube IGBT; the asymmetric device is characterized in that the types of a lower tube diode and an upper tube diode are different, the nominal current grade of the selected lower tube diode is larger than that of the upper tube diode, and the lower tube diode has strong surge current tolerance capability and can independently or mainly bear short-circuit current under the fault working condition.
The lower tube IGBT and the lower tube diode include several cases:
1) the lower tube IGBT and the lower tube diode are two devices which are independent of each other, namely the lower tube diode is an independent diode D2; at this time:
the lower tube diode D2 is different from the upper tube diode D1 in model, and the current level of the lower tube diode D2 is higher than that of the upper tube diode 1; the lower tube diode D2 has strong surge current endurance and can independently bear short-circuit current under the fault working condition.
2) The lower tube diode comprises a diode D2 externally arranged on the lower tube IGBT and also comprises a diode D3 internally arranged on the lower tube IGBT; at this time:
the external lower tube diode D2 is different from the upper tube diode D1 in model, and the external lower tube diode D2 is higher in current level than the upper tube diode; the lower tube IGBT and the external lower tube diode D2 are two devices which are independent of each other; the external lower tube diode D2 has strong surge current tolerance, and shares the short-circuit current under the fault working condition with the internal diode D3, but the external diode mainly bears the short-circuit current under the fault working condition.
Compared with the prior art, the invention has the beneficial effects that:
(1) the asymmetric half-bridge power module provided by the invention can greatly improve the current margin and junction temperature margin of the lower tube IGBT and the lower tube diode under the steady-state working condition, thereby improving the safety and reliability of the system.
(2) According to the asymmetric half-bridge power module provided by the invention, the lower tube diode alone bears the fault short-circuit current without introducing other power devices and driving circuits thereof, so that the design of the power module is greatly simplified, and the reliability of the system is improved.
Drawings
FIG. 1 is a diagram of an embodiment of an asymmetric half-bridge power module according to the present invention;
fig. 2 is another embodiment of the half-bridge power module of the asymmetric device according to the present invention;
FIG. 3 shows typical waveforms of steady-state currents borne by an upper tube IGBT and a lower tube IGBT under an inversion condition of the flexible direct converter valve;
FIG. 4 shows typical waveforms of steady-state currents borne by an upper tube diode and a lower tube diode under the rectifying condition of the flexible direct current converter valve;
FIG. 5 shows a fault condition current flow path in an embodiment of an asymmetric half-bridge power module according to the present invention;
fig. 6 shows a fault condition current flow path in another embodiment of the half-bridge power module of the asymmetric device of the present invention.
Detailed Description
The following detailed description of the present invention will be made with reference to the accompanying drawings.
The half-bridge power module is a power module composed of voltage type full-controlled devices such as IGBT, IEGT and the like and fast recovery diodes, as shown in fig. 1-2, taking the IGBT as an example, the half-bridge power module comprises a plurality of IGBTs and diodes D thereof, a direct current capacitor C, a discharge resistor R and a bypass device S, and a normally open contact of the bypass device S is connected in parallel with an output end of the power module.
A power device of the half-bridge power module comprises an upper tube IGBT, an upper tube diode, a lower tube IGBT and a lower tube diode; the upper tube IGBT and the upper tube diode are connected in parallel, the lower tube IGBT and the lower tube diode are connected in parallel, the upper tube IGBT and the lower tube IGBT are connected in series and then connected in parallel with the direct current capacitor, one end of the direct current capacitor is led out to be used as an outgoing line of the module, and the connecting point of the two IGBTs is led out to be used as the other outgoing line of the module.
In the two IGBTs of the half-bridge power module of the asymmetric device, the IGBT directly connected with the two outgoing lines of the power module is selected as a lower tube IGBT, and the other IGBT of the power module is selected as an upper tube IGBT.
The asymmetric device is a lower tube IGBT and an upper tube IGBT which are different in model, and the nominal current grade of the selected lower tube IGBT is larger than that of the selected upper tube IGBT; the asymmetric device is characterized in that the types of a lower tube diode and an upper tube diode are different, the nominal current grade of the selected lower tube diode is larger than that of the upper tube diode, and the lower tube diode has strong surge current tolerance capability and can independently or mainly bear short-circuit current under the fault working condition.
The lower tube IGBT and the lower tube diode include several cases:
1) the lower tube IGBT and the lower tube diode are two devices which are independent of each other, namely the lower tube diode is an independent diode D2; at this time:
the lower tube diode D2 is different from the upper tube diode D1 in model, and the current level of the lower tube diode D2 is higher than that of the upper tube diode; the lower tube diode D2 has strong surge current endurance and can independently bear short-circuit current under the fault working condition.
See example 1.
2) The lower tube diode comprises a diode D2 externally arranged on the lower tube IGBT and also comprises a diode D3 internally arranged on the lower tube IGBT; at this time:
the external lower tube diode D2 is different from the upper tube diode D1 in model, and the external lower tube diode D2 is higher in current level than the upper tube diode; the lower tube IGBT and the external lower tube diode D2 are two devices which are independent of each other; the external lower tube diode D2 has strong surge current tolerance, and shares the short-circuit current under the fault working condition with the internal diode D3, but the external diode mainly bears the short-circuit current under the fault working condition.
See example 2.
The top-tube IGBT T1 and the top-tube diode D1 may be integrated into one device, or may be two devices independent of each other.
Example 1: as shown in fig. 1, the asymmetric half-bridge power module includes two IGBTs: upper tube IGBT T1, lower tube IGBT T2, two diodes: a top tube diode D1, a bottom tube diode D2, a DC capacitor C1, a discharge resistor R1, a bypass device S1, and the like. The upper tube IGBT and the upper tube diode are connected in parallel, the lower tube IGBT and the lower tube diode are connected in parallel, the upper tube IGBT and the lower tube IGBT are connected in series, and then the upper tube IGBT and the lower tube IGBT are connected in parallel with a capacitor C1. The module is led out from the connection point of the upper tube IGBT and the lower tube IGBT, and meanwhile, the module is led out from one end of the capacitor C1. According to the invention, the lower tube IGBT and the upper tube IGBT are not of the same type, and the nominal current of the lower tube IGBT is larger than that of the upper tube IGBT; the lower tube diode nominal current is greater than the upper tube diode nominal current. The lower tube IGBT and the lower tube diode are two completely independent devices, the lower tube IGBT does not contain an anti-parallel diode, and the lower tube diode bears the short-circuit current under the fault working condition independently. Fig. 3 shows typical waveforms of steady-state currents borne by the upper tube IGBT and the lower tube IGBT when the flexible direct current converter valve operates under an inversion condition. It can be seen that the lower tube IGBT has a current carrying capacity significantly higher than that of the upper tube IGBT, and therefore the nominal current of the selected lower tube IGBT is larger than that of the selected upper tube IGBT to obtain a larger current and junction temperature margin. Fig. 4 shows typical waveforms of steady-state currents borne by the upper tube diode and the lower tube diode when the flexible direct current converter valve operates in a rectification working condition. It can be seen that the lower tube diode carries a significantly higher current than the upper tube diode, and therefore the lower tube diode nominal current is chosen to be greater than the upper tube diode nominal current to obtain a larger current and junction temperature margin. Under the fault working condition, the lower tube diode has strong surge current tolerance capability and can bear the short-circuit current independently without introducing other auxiliary power devices and driving the auxiliary power devices to bear the short-circuit current, and fig. 5 shows a flowing path of the short-circuit current under the fault working condition.
Example 2: another implementation of the half-bridge power module with asymmetric devices is shown in fig. 2, which includes two IGBTs: upper tube IGBT T1, lower tube IGBT T2, three diodes: an upper tube diode D1, an external lower tube diode D2, an internal lower tube diode D3, a direct current capacitor C1, a discharge resistor R1, a bypass device S1 and the like. The upper tube IGBT and the upper tube diode are connected in parallel, the lower tube IGBT and the two lower tube diodes are connected in parallel, the upper tube IGBT and the lower tube IGBT are connected in series, and then the upper tube IGBT and the lower tube IGBT are connected in parallel with a capacitor C1. The module is led out from the connection point of the upper tube IGBT and the lower tube IGBT, and meanwhile, the module is led out from one end of the capacitor C1. According to the invention, the lower tube IGBT and the upper tube IGBT are not of the same type, and the nominal current of the lower tube IGBT is larger than that of the upper tube IGBT; the built-in lower tube diode D3 is integrated inside the lower tube IGBT and is a complete device. The lower tube IGBT and the external lower tube diode D2 are two completely independent devices, and the nominal current of the external lower tube diode is larger than that of the upper tube diode. The external lower tube diode and the internal lower tube diode jointly and independently bear short-circuit current under a fault working condition, and the external lower tube diode mainly bears the short-circuit current under the fault working condition. Fig. 3 shows typical waveforms of steady-state currents borne by the upper tube IGBT and the lower tube IGBT when the flexible direct current converter valve operates under an inversion condition. It can be seen that the lower tube IGBT has a current carrying capacity significantly higher than that of the upper tube IGBT, and therefore the nominal current of the selected lower tube IGBT is larger than that of the selected upper tube IGBT to obtain a larger current and junction temperature margin. Fig. 4 shows typical waveforms of steady-state currents borne by the upper tube diode and the two lower tube diodes when the flexible direct current converter valve operates in the rectification working condition. It can be seen that the lower tube diode carries a significantly higher current than the upper tube diode, and therefore the external lower tube diode nominal current is chosen to be greater than the upper tube diode nominal current to obtain a larger current and junction temperature margin. Under the fault condition, the external lower tube diode and the internal lower tube diode share the short-circuit current, but the external diode mainly shares the short-circuit current, and fig. 6 shows a flowing path of the short-circuit current under the fault condition.
The power devices of the above embodiments are all exemplified by IGBTs, and the other voltage type fully controlled power devices are implemented in the same way.
The above embodiments are implemented on the premise of the technical solution of the present invention, and detailed embodiments and specific operation procedures are given, but the scope of the present invention is not limited to the above embodiments. The methods used in the above examples are conventional methods unless otherwise specified.
Claims (1)
1. A power device of the half-bridge power module comprises an upper tube IGBT, an upper tube diode, a lower tube IGBT and a lower tube diode; the upper tube IGBT and the upper tube diode are connected in parallel, the lower tube IGBT and the lower tube diode are connected in parallel, the upper tube IGBT and the lower tube IGBT are connected in series and then connected in parallel with the direct current capacitor, one end of the direct current capacitor is led out to be used as an outgoing line of the module, and the connecting point of the two IGBTs is led out to be used as the other outgoing line of the module;
the method is characterized in that in the two IGBTs of the half-bridge power module of the asymmetric device, the IGBT directly connected with the two outgoing lines of the power module is selected as a lower tube IGBT, and the other IGBT of the power module is selected as an upper tube IGBT;
the asymmetric device is a lower tube IGBT and an upper tube IGBT which are different in model, and the nominal current grade of the selected lower tube IGBT is larger than that of the selected upper tube IGBT; the asymmetric device is also characterized in that the types of a lower tube diode and an upper tube diode are different, the nominal current grade of the selected lower tube diode is larger than that of the upper tube diode, and the lower tube diode has strong surge current tolerance capability and can independently or mainly bear short-circuit current under the fault working condition;
the lower tube IGBT and the lower tube diode are two devices which are independent of each other, namely the lower tube diode is an independent diode D2; at this time:
the lower tube diode D2 is different from the upper tube diode in model, and the lower tube diode D2 is higher in current level than the upper tube diode; the lower tube diode D2 has strong surge current tolerance and can independently bear short-circuit current under the fault working condition; or the lower tube diode comprises a diode D2 externally arranged on the lower tube IGBT and also comprises a diode D3 internally arranged on the lower tube IGBT; at this time:
the external lower tube diode D2 is different from the upper tube diode in model, and the external lower tube diode D2 is higher in current grade than the upper tube diode; the lower tube IGBT and the external lower tube diode D2 are two devices which are independent of each other; the external lower tube diode D2 has strong surge current endurance and shares the short-circuit current with the internal diode D3 under the fault condition.
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| CN202010025692.0A CN111130370B (en) | 2020-01-10 | 2020-01-10 | Asymmetric device half-bridge power module suitable for MMC converter valve |
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| CN111130370B true CN111130370B (en) | 2021-08-31 |
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| CN113406408B (en) * | 2021-05-14 | 2022-04-12 | 南方电网科学研究院有限责任公司 | Flexible direct current converter valve power module bypass switch error-closing test method and circuit |
| CN116298652B (en) * | 2023-05-22 | 2023-07-21 | 广东电网有限责任公司阳江供电局 | MMC converter valve power module residual life assessment method and system |
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| CN103812377A (en) * | 2014-02-08 | 2014-05-21 | 南京南瑞继保电气有限公司 | Modular multi-level converter arm current control methods |
| CN208257683U (en) * | 2017-12-29 | 2018-12-18 | Abb瑞士股份有限公司 | Power module and modular multilevel converter |
| CN109039100A (en) * | 2018-07-25 | 2018-12-18 | 许继集团有限公司 | A kind of semibridge system submodule of modularization multi-level converter |
| CN208797847U (en) * | 2018-10-31 | 2019-04-26 | 北京金风科创风电设备有限公司 | Power module and current transformer |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106787884B (en) * | 2017-01-24 | 2019-06-25 | 特变电工新疆新能源股份有限公司 | The pressure modulator approach and press modulating device that nearest level approaches |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103812377A (en) * | 2014-02-08 | 2014-05-21 | 南京南瑞继保电气有限公司 | Modular multi-level converter arm current control methods |
| CN208257683U (en) * | 2017-12-29 | 2018-12-18 | Abb瑞士股份有限公司 | Power module and modular multilevel converter |
| CN109039100A (en) * | 2018-07-25 | 2018-12-18 | 许继集团有限公司 | A kind of semibridge system submodule of modularization multi-level converter |
| CN208797847U (en) * | 2018-10-31 | 2019-04-26 | 北京金风科创风电设备有限公司 | Power module and current transformer |
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