CN2039028U - Dynamic-characteristics tester for a thyristor - Google Patents

Dynamic-characteristics tester for a thyristor Download PDF

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Publication number
CN2039028U
CN2039028U CN 88213624 CN88213624U CN2039028U CN 2039028 U CN2039028 U CN 2039028U CN 88213624 CN88213624 CN 88213624 CN 88213624 U CN88213624 U CN 88213624U CN 2039028 U CN2039028 U CN 2039028U
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China
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circuit
delay
pulse
dynamic
amplifier
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CN 88213624
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Chinese (zh)
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马鹤亭
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Zhejiang University ZJU
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Zhejiang University ZJU
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Priority to CN 88213624 priority Critical patent/CN2039028U/en
Publication of CN2039028U publication Critical patent/CN2039028U/en
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Abstract

The utility model discloses a dynamic-characteristics tester for a thyristor adopting a synchronous pulse delay control circuit. The dynamic-characteristics tester for a thyristor adopts a power MOSFET as a power switch element to realize the automatic exchange of an internal power supply, and the dynamic-characteristics tester for a thyristor is provided with a manual switch to conveniently observe and test a plurality of dynamic characteristics of thyristors and diodes. The dynamic-characteristics tester for a thyristor has the advantages of high integration degree, high reliability, less power consumption, light weight and low cost, so the dynamic-characteristics tester for a thyristor is ideal experiment testing equipment.

Description

Dynamic-characteristics tester for a thyristor
The utility model is an education experiment thyristor dynamic characteristic test instrument.
Thyristor is a kind of large power semiconductor device, and development in recent years is rapid, has been widely used in the every field of national economy.Because its continuous development and the continuous expansion of application have formed a new discipline---power electronics at present.According to the needs of the national economic development and institution of higher learning's training of personnel, classify the power electronic devices class as an important course and offer for many years.This subject is told about internal mechanism, external characteristic (static state and dynamic perfromance) and measuring method thereof of various large power semiconductor devices such as thyristor or the like.The dynamic perfromance of thyristor is a kind of important characteristic (as opening characteristic, turn-off characteristic etc.), particularly more seems important for the device that is operated in the high frequency occasion.Yet current experiment of offering has only the measurement of static characteristics usually, and dynamic characteristic measuring is difficult to offer always.Some manufacturing planies of current China are generally oneself development about the measuring equipment of dynamic perfromance, every equipment can only be measured a parameter usually, as service time measure, the turn-off time measures etc., the cost height of these equipment, volume are big, are difficult to satisfy the needs of education experiment.Even such testing apparatus, also unspecial production is difficult to purchase.Owing to can not offer the dynamic characteristic test experiment for a long time, teaching efficiency is brought adverse effect.
The purpose of this utility model is to design a kind of well behaved thyristor dynamic characteristic test instrument, to satisfy the needs of experimental teaching.This tester measurement range is wide, and price is low, and is rational in infrastructure.
The technical solution of the utility model is to utilize the adjustable constant-flow source circuit to provide needed constant on state current to measured device Th, sees accompanying drawing 2, to guarantee the reliable conducting of measured device.Switch S 1Close a floodgate, constant current source efferent duct BJT is operated in magnifying state, switch S 2Close a floodgate, measured device flows through the on state current by BJT control through triggering and conducting.Behind measured device conducting certain hour, switch S 3Close a floodgate, to measured device reverse voltage in addition, on state current will reduce with certain rate of descent-di/dt and oppositely, flow through inverse current, until recovering reverse blocking state.After this, make switch S in due course quarter 4Connect, measured device is had the forward voltage of certain du/dt.The break-make of all switches adopts synchronizing pulse time-delay control, to realize automatic shifting function.Utilize dual trace oscilloscope to observe electric current, the voltage waveform of measured device, can measure needed dynamic parameter.
Description of drawings:
Fig. 1: the utility model system chart;
Fig. 2: the switching of power supply;
Fig. 3: pulse shaping circuit;
Fig. 4: constant current source control circuit;
Fig. 5: gating circuit and synchronizing pulse delay circuit;
Fig. 6: delay control circuit;
Fig. 7: reverse voltage control and-di/dt circuit;
Fig. 8: heavily add off state voltage control and du/dt circuit.
With reference to description of drawings embodiment:
As shown in Figure 3, utilize TC4572 to form synchronizing pulse and form circuit.Power-frequency voltage is added to the TC4572 input end after full-wave rectification, amplitude is less than 10V.The all good square-wave pulse in edge before and after pulse shaping, time-delay adjusting etc. obtains.Can obtain needed square-wave pulse through behind the power amplifier again.Change resistance R p 1, make pulse phase shift in 0.5ms~3ms scope, change resistance R p 2, make pulsewidth adjustable between 0.3ms~5ms.The output pulse amplitude is 10V.
Synchronization pulse is at first controlled constant current source and gating circuit work.When synchronizing pulse arrived, efferent duct BJT work was in magnifying state, and main circuit power is added on the measured device Th.Constant-current source circuit adopts the two-stage complex pipe to do and promotes level, to improve control sensitivity.As shown in Figure 4, change resistance R I1And R I2The output current of scalable constant current source is with the measured device on state current that need to obtain.As shown in Figure 5, be added on the synchronizing pulse of gating circuit through amplifier A 0, resistance R g 0, capacitor C g 0, stabilivolt DW 0With transistor BG 0The time-delay back obtains, and the input end of delay circuit is delivered in this pulse simultaneously, and this delay circuit is by amplifier A 1, resistance R g, capacitor C g, stabilivolt DW 1With transistor BG 1Form amplifier A 1Work, output signal drives BG 1The time-delay synchronizing pulse that is added on gating circuit is blocked in conducting, promptly obtains burst pulse output.Rg=12K Ω, during Cg=3000PF, pulsewidth is 36 μ s.For preventing the influence of main circuit to control circuit, all be provided with photoelectrical coupler LED at the input end of constant-current source circuit and gating circuit, for satisfying certain power requirement, photoelectrical coupler is selected GD05 for use.
As shown in Figure 6, delay control circuit is by amplifier A 1, A 2, A 3With A 4Form with corresponding resistance capacitance.For increasing the reliability of time-delay, simplify power supply, amplifier A 1With A 2Shared single supply double operational amplifier LM358 does not need outside zeroing, and is easy to use.Amplifier A 3Only with half of LM358, amplifier A 4Select for use F007 to get final product.Synchronizing pulse is through Rd 1, Cd 1And Rd 2, Cd 2The two-stage time-delay reaches needed time-delay.Resistance R d 1Selecting resistance for use is the potentiometer of 4K Ω, Cd 1=0.02 μ F, Rd 2=65K Ω, Cd 2During=3600PF, change resistance R d 1Time-delay transfers to 0.35ms.Pulse P through time-delay 1Deliver to-the di/dt circuit.Through amplifier A 2And resistance R d 1, capacitor C d 1Pulse after the time-delay is again through amplifier A 4And resistance R d 3, capacitor C d 3Do further time-delay, Rd 3Cd connect by 150K Ω potentiometer with 1K Ω resistance 3=3700PF, time-delay can reach 0.3ms.Change resistance R d 3Time-delay is adjustable between 2 μ s~0.3ms.The input pulse of this delay circuit is added to amplifier A 4Backward end, to obtain reverse delay pulse P 3Pulse P 2Deliver to the du/dt circuit.
As shown in Figure 7 and Figure 8 ,-work of di/dt circuit and du/dt circuit controlled by power MOSFET.Power MOSFET is selected enhancement device for use, and drain-source current is controlled by the grid bias-voltage.Pulse F 1After amplifying, be added to-grid of di/dt circuit power MOSFET, make its conducting, can be to measured device reverse voltage in addition, on state current reduces by certain-di/dt.Pulse P 2Be added to the grid of du/dt circuit power MOSFET, it become by conducting end, measured device is had the forward voltage of certain du/dt.
Advantage of the present utility model and characteristics:
1. complete machine device power consumption little (about 25W), volume is little (to be 400 * 350 * 250mm3), (less than 15Kg) in light weight is easy to carry.
2. as long as constant current source efferent duct capacity is increased, several roads of-di/dt circuit power MOSFET multi-parallel can be measured the larger capacity measured device.
3. between-di/dt circuit and du/dt circuit and main circuit, hand switch Si and Su are set respectively, just can test the conducting of measured device under the different condition and reverse all dynamic perfromances such as recovery respectively.
4. when not connecing measured device Th and du/dt circuit and not working, with the anode and the cathode connection terminal short circuit of circuit, reverse recovery characteristic that can test diode.
5. adapted SR-8 dual trace oscilloscope can be surveyed working stability to Kp5 thyristor and Zp5 diode.

Claims (5)

1, a kind of thyristor dynamic characteristic test instrument by synchronizing pulse to constant-current source circuit, gating circuit ,-control of delaying time of di/dt circuit and du/dt circuit, it is characterized in that:
(1) synchronizing pulse is made up of TC4572, power frequency sine wave voltage is added to pulse shaping circuit after full-wave rectification, after pulse shaping, amplification, obtain the square-wave pulse of amplitude 10V, phase shift 0.5ms~3ms is adjustable, pulsewidth 0.3ms~5ms is adjustable, synchronizing pulse is directly controlled constant current source work, changes resistance R I1And R I2Scalable constant current output current, adjustable between 0~10A, synchronizing pulse is through amplifier A 0, resistance R G0, capacitor C G0, stabilivolt DW 0, transistor BG 0Control gate control circuit work again after the generation 0.1ms time-delay is through amplifier A 1, resistance R g, capacitor C g, stabilivolt DW 1With transistor BG 1The delay circuit of forming makes gating circuit produce burst pulse, triggers the measured device conducting, and synchronizing pulse is through delay control circuit control-di/dt circuit and du/dt circuit working, and delay control circuit is by amplifier A 1, A 2, A 3, and A 4And resistance R D1, R D2, R D3, capacitor C D1, C D2, C D3Form, through A 1, A 2, A 3And R D1, R D2, C D1, C D2Time-delay obtains synchronizing pulse P 1, time-delay 0.35ms is through A 3, R D3, C D3Delay time rp pulse P 2, the 2 μ s~0.3ms that delay time are adjustable, amplifier A 0, A 1, A 2And A 3Select single supply double operational LM358 for use, amplifier A 4Select F007 for use;
(2) isolate with photoelectrical coupler GD05 between constant-current source circuit and gating circuit and synchronizing pulse delay control circuit;
(3)-break-make of di/dt circuit and du/dt circuit realizes by power MOSFET.
2, tester according to claim 1 is characterized in that-di/dt circuit and du/dt circuit are not worked when the work of constant current source and gating circuit, and with diode connection terminal short circuit, that can observe measured device Th opens characteristic and on-state characteristic.
3, tester according to claim 1 is characterized in that being made-the di/dt circuit working by hand switch when measured device Th conducting, gives Th in addition reverse voltage, can test the reverse recovery characteristic of Th.
4, tester according to claim 1 is characterized in that making the du/dt circuit working by hand switch when measured device Th has added reverse voltage, adds forward voltage to Th, regulates the turn-off characteristic of Ru test Th.
5, tester according to claim 1 is characterized in that main circuit is connect the terminal short circuit of measured device anode and negative electrode, and constant current source work makes diode current flow, then, manually make-the di/dt circuit working, add reverse voltage, the reverse recovery characteristic of test diode to diode.
CN 88213624 1988-08-24 1988-08-24 Dynamic-characteristics tester for a thyristor Withdrawn CN2039028U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 88213624 CN2039028U (en) 1988-08-24 1988-08-24 Dynamic-characteristics tester for a thyristor

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Application Number Priority Date Filing Date Title
CN 88213624 CN2039028U (en) 1988-08-24 1988-08-24 Dynamic-characteristics tester for a thyristor

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CN2039028U true CN2039028U (en) 1989-06-07

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100392418C (en) * 2006-03-17 2008-06-04 中国电力科学研究院 Auxilary valve triggering and detecting code of all-duty testing device
CN101382569B (en) * 2007-09-05 2011-11-09 深圳Tcl新技术有限公司 Circuit breaking test device
CN103913688A (en) * 2013-01-07 2014-07-09 北大方正集团有限公司 MOS transistor characteristic testing circuit and method
CN103941181A (en) * 2014-04-08 2014-07-23 北京安泰志诚科技发展有限公司 Test device for acquiring on-off state of thyristor impulse power switch assembly
CN103969564A (en) * 2013-01-30 2014-08-06 苏州同冠微电子有限公司 Diode reverse recovery characteristic tester
CN107861042A (en) * 2017-10-25 2018-03-30 北京国联万众半导体科技有限公司 A kind of method of testing for Wide Bandgap Semiconductor Power Devices
CN110244211A (en) * 2019-07-12 2019-09-17 北京华峰测控技术股份有限公司 A kind of transient thermal resistance test circuit
CN112415356A (en) * 2020-11-05 2021-02-26 阳光电源股份有限公司 Thyristor turn-off characteristic testing device and testing method
CN112946449A (en) * 2021-01-28 2021-06-11 臻驱科技(上海)有限公司 Power semiconductor device model selection method
CN113608093A (en) * 2021-07-14 2021-11-05 北京工业大学 Method for implementing control logic for testing dynamic characteristics of power semiconductor device
CN117872080A (en) * 2024-01-29 2024-04-12 海信家电集团股份有限公司 Power semiconductor device testing device, method and equipment

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100392418C (en) * 2006-03-17 2008-06-04 中国电力科学研究院 Auxilary valve triggering and detecting code of all-duty testing device
CN101382569B (en) * 2007-09-05 2011-11-09 深圳Tcl新技术有限公司 Circuit breaking test device
CN103913688B (en) * 2013-01-07 2016-09-21 北大方正集团有限公司 A kind of test circuit testing metal-oxide-semiconductor characteristic and method thereof
CN103913688A (en) * 2013-01-07 2014-07-09 北大方正集团有限公司 MOS transistor characteristic testing circuit and method
CN103969564A (en) * 2013-01-30 2014-08-06 苏州同冠微电子有限公司 Diode reverse recovery characteristic tester
CN103941181B (en) * 2014-04-08 2017-01-18 北京安泰志诚科技发展有限公司 Test device for acquiring on-off state of thyristor impulse power switch assembly
CN103941181A (en) * 2014-04-08 2014-07-23 北京安泰志诚科技发展有限公司 Test device for acquiring on-off state of thyristor impulse power switch assembly
CN107861042A (en) * 2017-10-25 2018-03-30 北京国联万众半导体科技有限公司 A kind of method of testing for Wide Bandgap Semiconductor Power Devices
CN110244211A (en) * 2019-07-12 2019-09-17 北京华峰测控技术股份有限公司 A kind of transient thermal resistance test circuit
CN110244211B (en) * 2019-07-12 2024-04-30 北京华峰测控技术股份有限公司 Transient thermal resistance test circuit
CN112415356A (en) * 2020-11-05 2021-02-26 阳光电源股份有限公司 Thyristor turn-off characteristic testing device and testing method
CN112946449A (en) * 2021-01-28 2021-06-11 臻驱科技(上海)有限公司 Power semiconductor device model selection method
CN113608093A (en) * 2021-07-14 2021-11-05 北京工业大学 Method for implementing control logic for testing dynamic characteristics of power semiconductor device
CN113608093B (en) * 2021-07-14 2024-05-24 北京工业大学 Implementation method of control logic for dynamic characteristic test of power semiconductor device
CN117872080A (en) * 2024-01-29 2024-04-12 海信家电集团股份有限公司 Power semiconductor device testing device, method and equipment

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