CN110244211B - Transient thermal resistance test circuit - Google Patents
Transient thermal resistance test circuit Download PDFInfo
- Publication number
- CN110244211B CN110244211B CN201910631328.6A CN201910631328A CN110244211B CN 110244211 B CN110244211 B CN 110244211B CN 201910631328 A CN201910631328 A CN 201910631328A CN 110244211 B CN110244211 B CN 110244211B
- Authority
- CN
- China
- Prior art keywords
- power supply
- constant current
- current load
- voltage
- working
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000012360 testing method Methods 0.000 title claims abstract description 90
- 230000001052 transient effect Effects 0.000 title claims abstract description 41
- 230000005669 field effect Effects 0.000 claims description 6
- 230000003321 amplification Effects 0.000 claims description 2
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 230000020169 heat generation Effects 0.000 description 2
- 239000013065 commercial product Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000047 product Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2608—Circuits therefor for testing bipolar transistors
- G01R31/2619—Circuits therefor for testing bipolar transistors for measuring thermal properties thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
Abstract
The invention provides a transient thermal resistance test circuit, which comprises: the device to be tested is divided into a driving port and two working ports according to the working characteristics, and the two working ports are conducted when the driving voltage is applied to the driving port; the test circuit includes: the constant current load is used for setting a constant current value, and the input end of the constant current load is connected with the first working port of the tested device; the positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load; the positive electrode of the control power supply is connected with the non-inverting input end of the operational amplifier, and the negative electrode of the control power supply is connected with the output end of the constant current load; and the output end of the operational amplifier is connected with the driving end of the tested device, and the inverting input end of the operational amplifier is connected with the first working port of the tested device. The invention can solve the problems of high design difficulty, serious heating, low efficiency, complex circuit and the like of the voltage-current power amplifier in the traditional transient thermal resistance test circuit.
Description
Technical Field
The invention relates to the technical field of integrated circuit testing, in particular to a transient thermal resistance testing circuit.
Background
Currently, when a power semiconductor device operates under a power pulse condition, the temperature rise of the device is related to the power pulse width and the duty cycle. Under the test conditions of setting the applied power, the power pulse time and the pulse duty ratio, the temperature change of the device is represented by a certain temperature-sensitive characteristic in the semiconductor device, and the transient thermal resistance is calculated. The transient thermal resistance of a semiconductor device is related to the geometry, specific heat capacity, thermal diffusivity, etc. of the chip and package, and thus the transient thermal resistance of a semiconductor device may reflect many characteristics of the device.
The test flow of the transient thermal resistance test is as follows: testing the normal junction temperature T1 of the tested device, applying power, testing the junction temperature T2 of the tested device after the power is applied, and calculating the transient thermal resistance according to the temperature change of the T1 and the T2 and the applied power. The power applied to the tested device needs to set the power voltage and power current of the tested device, and generally, the power applied when testing the high-power device can reach hundreds to one kilowatt.
In the prior art, a test circuit as shown in fig. 1-3 is often adopted to apply a power voltage and a power current to a power semiconductor device so as to perform a transient thermal resistance test. The test circuit shown in fig. 1 is a test for field effect transistors such as MOSFETs and IGBTs, and the test circuits shown in fig. 2 and 3 are test for triodes.
The test circuits shown in fig. 1 and 2 adopt the same principle, and the feedback of the operational amplifier is used to make the gate (base) of the tested device (MOSFET or triode) have zero potential, and at this time, the voltage output by the voltage power amplifier and the current output by the current power amplifier connected to the remaining two ends of the tested device are the power voltage and the power current of the tested device; the test circuit shown in fig. 3 does not use operational amplifier feedback, but directly grounds the base electrode of the device under test (triode) to make it zero potential, at this time, the sum of the voltage output by the voltage power amplifier connected to the remaining end of the device under test and the Vbe voltage (voltage between the base electrode and emitter electrode) of the device under test (triode) is the power voltage of the device under test, and the current output by the current power amplifier connected to the remaining end of the device under test is the power current of the device under test.
However, as shown above, the problem in the prior art is that the required power for testing the device under test usually reaches several hundred kilowatts, the difficulty in designing the voltage and current power amplifier is great, the voltage and current power amplifier bears larger power from the aspect of efficiency, the heat generation is serious and the efficiency is low, the size of the test circuit is larger from the aspect of structure, and the circuit is complex.
Disclosure of Invention
Therefore, the main purpose of the present invention is to provide a transient thermal resistance test circuit, which simplifies the design of the power source, so that the applicability of the power source is wider, the power loss of the test circuit is smaller, the control is easy, the design is simple, the size is small, and the problems of the existing transient thermal resistance test circuit, such as large design difficulty, serious heat generation, lower efficiency, larger size, complex circuit, etc., of the voltage-current power amplifier of the power output circuit can be effectively solved.
The invention adopts the technical scheme that the transient thermal resistance testing circuit comprises:
The device to be tested is divided into a driving port and two working ports according to the working characteristics, and the two working ports are conducted when the driving voltage is applied to the driving port; the test circuit includes:
the constant current load is used for setting a constant current value, and the input end of the constant current load is connected with the first working port of the tested device;
The positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load;
The positive electrode of the control power supply is connected with the non-inverting input end of the operational amplifier, and the negative electrode of the control power supply is connected with the output end of the constant current load; the output end of the operational amplifier is connected with the driving end of the tested device, and the inverting input end of the operational amplifier is connected with the first working port of the tested device; the operational amplifier enables the voltage at the first working port of the tested device to be the voltage output by the control power supply;
And the voltage output by the control power supply is greater than or equal to the minimum working voltage for driving the constant current load.
By the above, in the technical scheme, the control power supply plays a role in driving the tested device to be closed or opened and setting the working voltage value of the constant current load, the voltage value of the control power supply only needs to meet the minimum working voltage (about 1V) of the constant current load, and compared with the working voltages required by the voltage power amplifier and the current power amplifier in the prior art, the power loss is greatly reduced. After the control power supply drives the tested device to be closed, setting the voltage of a first working port of the tested device to be the voltage output by the control power supply through the feedback of the inverting input end of the operational amplifier, wherein the voltage of the first working port is the minimum working voltage required by the constant current load; the power supply has the function of providing power voltage for the tested device, and the voltage is larger, and the voltage of the first working port of the tested device is the voltage output by the control power supply, so that the power voltage of the tested device can be obtained by subtracting the voltage output by the control power supply from the voltage output by the power supply, and the transient thermal resistance power of the tested device can be obtained according to the power current. According to the scheme, the design of the power source is simplified, the voltage power amplifier and the current power amplifier in the background technology are simplified into a single power source, meanwhile, the power source can be a finished product commercial power source, the design of a power part of a test circuit is simplified, the applicability of the power source is wider, the power output of the power source is mostly applied to a tested device, the power efficiency is high, and the test circuit generates heat and has small volume; the test circuit only needs to design a low-power control circuit, the circuit design is simple, and the power requirement of the transient thermal resistance test circuit can be effectively met.
The invention also provides another transient thermal resistance test circuit, which comprises:
The device to be tested is divided into a driving port and two working ports according to the working characteristics, and the two working ports are conducted when the driving voltage is applied to the driving port; the test circuit includes;
the constant current load is used for setting a constant current value, and the input end of the constant current load is connected with the first working port of the tested device;
The positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load;
The positive electrode of the control power supply is connected with the second working port of the tested device, and the negative electrode of the control power supply is connected with the non-inverting input end of the operational amplifier; the output end of the operational amplifier is connected with the driving end of the tested device, and the inverting input end of the operational amplifier is connected with the first working port of the tested device; the operational amplifier enables the voltage at the first working port of the tested device to be the voltage output by the control power supply;
The difference value between the voltage output by the power supply and the voltage output by the control power supply is larger than or equal to the minimum working voltage for driving the constant current load.
By the above, in the technical scheme, the control power supply plays a role in driving the tested device to be closed or opened and setting a power voltage value for the tested device; the power supply has the functions of providing power for the device to be tested and driving the constant current load to work, the voltage of the power supply is slightly larger than the voltage of the control power supply, the voltage difference value of the power supply meets the minimum working voltage of the constant current load, the constant current load sets power current for the device to be tested, and the thermal resistance power of the device to be tested can be calculated through the power voltage and the power current.
The invention also provides a transient thermal resistance test circuit, which comprises:
The device to be tested is divided into a driving port and two working ports according to the working characteristics, and the two working ports are conducted when the driving voltage is applied to the driving port; the test circuit includes;
the constant current load is used for setting a constant current value, and the input end of the constant current load is connected with the first working port of the tested device;
The positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load;
The positive electrode of the control power supply is connected with the driving port of the tested device, and the negative electrode of the control power supply is connected with the output end of the constant current load;
and the voltage output by the control power supply is greater than or equal to the sum of the minimum working voltage for driving the constant current load and the voltage drop of the control power supply on the tested device.
By the above, in the technical scheme, the control power supply plays a role in driving the tested device to be closed or opened and driving the constant current load to work, the voltage is the sum of the voltage between the driving end of the tested device and the first working port and the minimum working voltage of the constant current load, the power supply plays a role in providing power voltage for the tested device, according to the connection mode of the circuit, the power voltage of the tested device is the voltage output by the power supply minus the working voltages at two ends of the constant current load, and the thermal resistance power of the tested device can be calculated by combining the power current set by the constant current load.
Preferably, the positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load by adopting a Kelvin circuit;
the Kelvin circuit includes a drive sub-circuit and a sense sub-circuit.
By the method, the power supply and the circuit connected with the tested device have larger power current to pass, so that Kelvin circuit connection is adopted, the on-line voltage drop loss caused by large current can be effectively reduced, and the thermal resistance test is more accurate.
Preferably, the constant current load comprises a constant current load circuit connected by a MOS tube, a resistor, a second operational amplifier and a differential amplifier;
The source electrode of the MOS tube is connected with one end of the resistor, and the drain electrode of the MOS tube and the other end of the resistor correspond to the input end and the output end of the constant current load respectively;
the non-inverting input end of the second operational amplifier is connected with an external power supply, the output end of the second operational amplifier is connected with the grid electrode of the MOS tube, and the inverting input end of the second operational amplifier is connected with the output end of the differential amplifier;
and the non-inverting input end and the inverting input end of the differential amplifier are respectively connected with two ends of the resistor, and the voltage output by the external power supply is subjected to gain amplification to provide constant current voltage for the resistor.
By applying an external power supply and controlling the gain multiple of the differential amplifier, the constant current load is combined with a resistor to achieve the purpose of setting the power current for the tested device.
Optionally, the device under test includes an N-type field effect transistor, and the driving port, the first working port and the second working port of the device under test are respectively a gate, a drain and a source.
Optionally, the device under test includes a triode, and the driving port, the first working port and the second working port of the device under test are respectively a base electrode, an emitter electrode and a collector electrode.
Optionally, a resistor is further connected in series to the base terminal circuit of the triode.
Drawings
FIG. 1 is a schematic diagram of a prior art circuit for performing transient thermal resistance testing on a field effect transistor;
FIG. 2 is a schematic diagram of a prior art circuit for transient thermal resistance testing of a transistor;
FIG. 3 is a schematic diagram of another prior art circuit for transient thermal resistance testing of a transistor;
FIG. 4 is a circuit schematic of a first embodiment of the transient thermal resistance test circuit of the present invention;
FIG. 5 is a schematic circuit diagram of the constant current load of the present invention;
FIG. 6 is a circuit schematic of a second embodiment of the transient thermal resistance test circuit of the present invention;
FIG. 7 is a circuit schematic of a third embodiment of a transient thermal resistance test circuit of the present invention;
FIG. 8 is a circuit schematic of a fourth embodiment of the transient thermal resistance test circuit of the present invention;
FIG. 9 is a circuit schematic of a fifth embodiment of the transient thermal resistance test circuit of the present invention.
Detailed Description
Embodiments of the transient thermal resistance test circuit according to the present invention will be described in detail with reference to fig. 4 to 8.
Example 1
The first embodiment shown in fig. 4 takes an N-type MOS transistor as an example of a device under test, and corresponds to the prior art shown in fig. 1, the testing principle of the transient thermal resistance testing circuit is as follows:
The control power supply V1 is used as a driving power supply of the MOS tube to be tested, the MOS tube to be tested is driven to be closed or opened, and meanwhile, a working voltage value required by a constant current load is set; the power supply V2 is used as a power supply of the MOS tube to be tested, and provides power voltage for the MOS tube to be tested and working voltage for the constant current load; a constant current load is adopted as a constant current source of the MOS tube to be tested, and power current is set for the MOS tube to be tested;
The positive electrode of the control power supply V1 is connected with the non-inverting input end of the operational amplifier, the output end of the operational amplifier is connected with the grid electrode of the MOS tube to be tested, the grid electrode of the operational amplifier is provided with threshold voltage, and the inverting input end of the operational amplifier is connected with the source electrode of the MOS tube to be tested, so that the source electrode voltage is V1; the negative electrode of the control power supply V1 is connected with the constant current load in series and then connected to the source electrode of the MOS tube to be tested;
The positive electrode of the power supply V2 is connected to the drain electrode of the MOS tube to be tested by adopting a Kelvin circuit, and the negative electrode of the power supply V2 is connected to the source electrode of the MOS tube to be tested after being connected with a constant current load in series by adopting the Kelvin circuit. The positive pole and the negative pole of the power supply V2 are respectively connected with a Kelvin circuit comprising two sub-circuits, wherein the two sub-circuits connected with the positive pole are force+ (a driving sub-circuit) and Sence + (a sensing sub-circuit), the two sub-circuits connected with the negative pole are Force- (a driving sub-circuit) and Sence- (a sensing sub-circuit), in the Kelvin connection circuit, a Force port is also called a driving port, a Sence port is also called a sensing port, and the voltage drop of the power voltage on a lead can be avoided by adopting the Kelvin circuit connection mode, so that the power voltage is relatively accurate on a tested device;
In this embodiment, the voltage of the control power V1 may be designed to be 1V or even smaller, and the specific voltage depends on the minimum operating voltage of the constant current load, which is usually achieved by using a simple low-power integrated amplifier; the power supply V2 can be a commercial product linear power supply, and is connected to two ends of the tested MOS tube by adopting a Kelvin circuit, so that the voltage drop on the line is lower, and the power voltage VDS=V2-V1 applied to the tested MOS tube can be calculated according to the voltage of the source electrode of the tested MOS tube as V1;
Fig. 5 shows a circuit schematic diagram of a constant current load in this embodiment, which is formed by connecting an operational amplifier, a differential amplifier, a MOS tube and a resistor R, wherein the non-inverting input end of the operational amplifier is connected with an external voltage Vset, the output end of the operational amplifier is connected with the gate of the MOS tube and is used for controlling the opening or closing of the MOS tube, the inverting input end of the operational amplifier is connected with the output end of the differential amplifier, the two input ends of the differential amplifier are respectively connected with the two ends of the resistor R, the resistor R is connected in series between the source electrode and the output end of the MOS tube, the drain electrode of the MOS tube is connected with the source electrode of the MOS tube to be tested through the input end, and the output end is respectively connected with the cathodes of a control power supply V1 and a power supply V2. The constant current load circuit can control the voltage applied to two ends of the resistor R through the set Vset and the gain multiple of the control differential amplifier, so that the output power current is obtained. For example, when the gain multiple of the differential amplifier is 1, the power current i=vset/R output by the differential amplifier;
therefore, the transient thermal resistance power of the tested MOS tube can be calculated as I (V2-V1).
In the corresponding embodiment of fig. 4, the use of the control power V1 to set the required operating voltage value for the constant current load, and the power V2 to provide the operating voltage, driving the constant current load means: in fig. 5, the voltage difference between the gate and the source of the MOS transistor is positive, and the voltage difference between the drain and the source of the MOS transistor is positive by the V1 circuit, so that the drain and the source of the MOS transistor are turned on, and the power current I output by the constant current load is provided to the device under test.
Example two
In the second embodiment shown in fig. 6, taking the device under test as an N-type MOS transistor as an example, the transient thermal resistance test circuit provides another design concept:
Setting a required power voltage value for the tested MOS tube by adopting a control power supply V1; a constant current load is adopted as a constant current source of the MOS tube to be tested, and power current is set for the MOS tube to be tested; a power supply V2 is adopted to provide power for the tested MOS tube and drive voltage for the constant-current load, so as to drive the constant-current load to work;
the positive electrode of the control power supply V1 is connected with the drain electrode of the MOS tube to be tested, the negative electrode of the control power supply V1 is connected with the non-inverting input end of the operational amplifier, the output end of the remote amplifier is connected with the grid electrode of the MOS tube to be tested, and the inverting input end of the remote amplifier is connected with the source electrode of the MOS tube to be tested;
The positive electrode of the power supply V2 is connected with the drain electrode of the MOS tube to be tested, and the negative electrode is connected with the source electrode of the MOS tube to be tested after being connected with the constant current load in series;
In this embodiment, the control power supply V1 sets the power voltage value required by the MOS transistor to be tested through feedback of the operational amplifier, even if the power voltage vds=v1, and since there is no large current on the circuit, the kelvin circuit connection is not needed; the voltage of the power supply V2 is required to be slightly larger than the power voltage VDS (V1), so that the constant current load can work while the power is supplied to the tested MOS tube, and the working voltage is supplied to the constant current load, wherein the difference value of the V2 and the V1 can meet the minimum working voltage of the constant current load;
the constant current load sets a power current for the test circuit, and the circuit connection of the constant current load is the same as that of the constant current load in the first embodiment, and is not described herein;
According to the power voltage VDS (V1) and the power current set by the constant current load, the transient thermal resistance power of the tested MOS tube in the embodiment can be calculated.
Example III
The third embodiment shown in fig. 7 takes an N-type triode as an example of a device under test, and corresponds to the prior art shown in fig. 2, the testing principle of the transient thermal resistance testing circuit is as follows:
the control power supply V1 is used as a driving power supply of the tested triode and the constant current load, and drives the tested triode to be closed or opened and drives the constant current load to work; a power supply V2 is adopted as a power supply of the triode to be tested, and power voltage is provided for the triode to be tested; a constant current load is adopted as a constant current source of the triode to be tested, and power current is set for the triode to be tested;
the positive electrode of the control power supply V1 is connected with the non-inverting input end of the operational amplifier, the output end of the operational amplifier is connected with the base electrode of the tested triode in series with a resistor to provide threshold voltage for the base electrode, and the inverting input end of the operational amplifier is connected with the emitter electrode of the tested triode to enable the emitter electrode voltage to be V1; the negative electrode of the control power supply V1 is connected with the constant current load in series and then connected to the emitter of the triode to be tested;
The positive electrode of the power supply V2 is connected to the collector electrode of the triode to be tested by adopting a Kelvin circuit, and the negative electrode of the power supply V2 is connected to the emitter electrode of the triode to be tested after being connected with a constant current load in series by adopting the Kelvin circuit;
The working principle of the test circuit in this embodiment is basically consistent with that of the test circuit in the first embodiment, and the voltage of the power supply V1 is controlled to meet the minimum working voltage of the constant current load; the power supply V2 is connected to the collector and the emitter of the triode to be tested by adopting a Kelvin circuit, so that the voltage drop on the line is lower, and the power voltage VCE=V2-V1 applied to the triode to be tested can be calculated according to the voltage of the emitter of the triode to be tested as V1;
the constant current load sets a power current for the test circuit, and the circuit connection of the constant current load is the same as that of the constant current load in the first embodiment, and is not described herein;
According to the power voltage VCE and the power current set by the constant current load, the transient thermal resistance power of the tested triode in the embodiment can be calculated.
Example IV
In the fourth embodiment shown in fig. 8, the device to be tested is still taken as an N-type triode as an example, and the design concept of the transient thermal resistance test circuit is identical to that of the test circuit described in the second embodiment, except that the device to be tested is different;
Setting a required power voltage value for the tested triode by adopting a control power supply V1; a constant current load is adopted as a constant current source of the triode to be tested, and power current is set for the triode to be tested; a power supply V2 is adopted to provide power for the triode to be tested and provide driving voltage for the constant current load, so as to drive the constant current load to work;
The positive electrode of the control power supply V1 is connected with the collector electrode of the triode to be tested, the negative electrode of the control power supply V1 is connected with the non-inverting input end of the operational amplifier, the output end of the remote amplifier is connected with the base electrode of the triode to be tested, and the inverting input end of the remote amplifier is connected with the emitter electrode of the triode to be tested;
The positive electrode of the power supply V2 is connected with the collector electrode of the triode to be tested, and the negative electrode is connected with the emitter electrode of the triode to be tested after being connected with a constant current load in series;
in this embodiment, the control power supply V1 sets the power voltage value required by the transistor under test, i.e. the power voltage vce=v1, through feedback from the operational amplifier; the voltage of the power supply V2 is required to be slightly larger than the power voltage VCE (V1), so that the constant current load can work while the power is provided for the tested triode, and the working voltage is provided for the constant current load, wherein the difference value of the V2 and the V1 can be satisfied with the minimum working voltage of the constant current load;
the constant current load sets a power current for the test circuit, and the circuit connection of the constant current load is the same as that of the constant current load in the first embodiment, and is not described herein;
according to the power voltage VCE (V1) and the power current set by the constant current load, the transient thermal resistance power of the tested triode in the embodiment can be calculated.
Example five
In the fifth embodiment shown in fig. 9, taking an N-type triode as an example of a device under test, another transient thermal resistance test circuit is provided corresponding to the prior art shown in fig. 3, and the difference between the test circuit and the above embodiment is that an operational amplifier is not used for feedback, and the specific circuit includes:
The positive electrode of the control power supply V1 is connected with the base electrode of the tested triode to drive the tested triode to be closed or opened, the negative electrode of the control power supply V1 is connected with the emitter electrode of the tested triode after being connected with the constant current load in series, and the voltage of the control power supply V1 is the sum of the minimum working voltage of the constant current load and the voltage between the base electrode and the emitter electrode of the tested triode according to the connection characteristic of the control power supply V1;
The positive electrode of the power supply V2 is connected to the collector electrode of the triode to be tested by adopting a Kelvin circuit, and the negative electrode of the power supply V2 is connected to the emitter electrode of the triode to be tested after being connected with a constant current load in series by adopting the Kelvin circuit;
the power voltage VCE=v2-v1+ of the tested triode is the voltage between the base electrode and the emitter electrode of the tested triode, namely the working voltage of the two ends of the VCE=v2-constant current load, the power current is set by the constant current load, and the transient thermal resistance power of the tested triode can be calculated according to the power voltage VCE and the power current.
The above embodiments are all described by using N-type field effect transistors or triodes, and when testing P-type field effect transistors or triodes, the principle of the transient thermal resistance test circuit is unchanged, and only the positive and negative polarities of the control power supply V1, the power supply V2 and the constant current load need to be correspondingly adjusted.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (8)
1. A transient thermal resistance test circuit is characterized in that: comprising the following steps:
The device to be tested is divided into a driving port and two working ports according to the working characteristics, and the two working ports are conducted when the driving voltage is applied to the driving port; the test circuit includes:
the constant current load is used for setting a constant current value, and the input end of the constant current load is connected with the first working port of the tested device;
The positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load;
the positive electrode of the control power supply is connected with the non-inverting input end of the operational amplifier, and the negative electrode of the control power supply is connected with the output end of the constant current load; the output end of the operational amplifier is connected with the driving port of the tested device, and the inverting input end of the operational amplifier is connected with the first working port of the tested device; the operational amplifier enables the voltage at the first working port of the tested device to be the voltage output by the control power supply;
And the voltage output by the control power supply is greater than or equal to the minimum working voltage for driving the constant current load.
2. A transient thermal resistance test circuit, comprising:
The device to be tested is divided into a driving port and two working ports according to the working characteristics, and the two working ports are conducted when the driving voltage is applied to the driving port; the test circuit includes;
the constant current load is used for setting a constant current value, and the input end of the constant current load is connected with the first working port of the tested device;
The positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load;
The positive electrode of the control power supply is connected with the second working port of the tested device, and the negative electrode of the control power supply is connected with the non-inverting input end of the operational amplifier; the output end of the operational amplifier is connected with the driving port of the tested device, and the inverting input end of the operational amplifier is connected with the first working port of the tested device; the operational amplifier enables the voltage at the first working port of the tested device to be the voltage output by the control power supply;
The difference value between the voltage output by the power supply and the voltage output by the control power supply is larger than or equal to the minimum working voltage for driving the constant current load.
3. A transient thermal resistance test circuit, comprising:
The device to be tested is divided into a driving port and two working ports according to the working characteristics, and the two working ports are conducted when the driving voltage is applied to the driving port; the test circuit includes;
the constant current load is used for setting a constant current value, and the input end of the constant current load is connected with the first working port of the tested device;
The positive electrode of the power supply is connected with the second working port of the tested device, and the negative electrode of the power supply is connected with the output end of the constant current load;
The positive electrode of the control power supply is connected with the driving port of the tested device, and the negative electrode of the control power supply is connected with the output end of the constant current load;
and the voltage output by the control power supply is greater than or equal to the sum of the minimum working voltage for driving the constant current load and the voltage drop of the control power supply on the tested device.
4. A circuit according to claim 1 or 3, wherein the positive electrode of the power supply is connected with the second working port of the device under test, and the negative electrode of the power supply is connected with the output end of the constant current load by a kelvin circuit;
the Kelvin circuit includes a drive sub-circuit and a sense sub-circuit.
5. A circuit according to any one of claims 1, 2 or 3, wherein the constant current load comprises a constant current load circuit connected by a MOS transistor, a resistor, a second operational amplifier and a differential amplifier;
The source electrode of the MOS tube is connected with one end of the resistor, and the drain electrode of the MOS tube and the other end of the resistor correspond to the input end and the output end of the constant current load respectively;
the non-inverting input end of the second operational amplifier is connected with an external power supply, the output end of the second operational amplifier is connected with the grid electrode of the MOS tube, and the inverting input end of the second operational amplifier is connected with the output end of the differential amplifier;
and the non-inverting input end and the inverting input end of the differential amplifier are respectively connected with two ends of the resistor, and the voltage output by the external power supply is subjected to gain amplification to provide constant current voltage for the resistor.
6. A circuit according to any one of claims 1,2 or 3, wherein the device under test comprises an N-type field effect transistor, and the drive port, the first and second working ports of the device under test are respectively a gate, a drain and a source.
7. A circuit according to any one of claims 1,2 or 3, wherein the device under test comprises a transistor, and the drive port, the first and second working ports of the device under test are respectively a base, an emitter and a collector.
8. The circuit of claim 7 wherein said transistor base terminal is further connected in series with a resistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910631328.6A CN110244211B (en) | 2019-07-12 | 2019-07-12 | Transient thermal resistance test circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910631328.6A CN110244211B (en) | 2019-07-12 | 2019-07-12 | Transient thermal resistance test circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110244211A CN110244211A (en) | 2019-09-17 |
| CN110244211B true CN110244211B (en) | 2024-04-30 |
Family
ID=67892068
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910631328.6A Active CN110244211B (en) | 2019-07-12 | 2019-07-12 | Transient thermal resistance test circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110244211B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110736909B (en) * | 2019-10-18 | 2022-09-20 | 北京华峰测控技术股份有限公司 | Semiconductor device package inspection method, computer device, and readable storage medium |
| CN115078947A (en) * | 2022-06-15 | 2022-09-20 | 北京工业大学 | Base current circuit for measuring thermal resistance of pnp bipolar transistor |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85104182A (en) * | 1985-05-28 | 1986-11-26 | 上海市轻工业研究所 | The method of on-line measuring transistor and device |
| CN2039028U (en) * | 1988-08-24 | 1989-06-07 | 浙江大学 | Dynamic-characteristics tester for a thyristor |
| JPH05203698A (en) * | 1992-01-27 | 1993-08-10 | Oki Electric Ind Co Ltd | Method for measuring heat resistance of mesfet |
| JPH0735813A (en) * | 1993-07-22 | 1995-02-07 | Omron Corp | Heat resistance measuring apparatus |
| CN2720457Y (en) * | 2004-07-19 | 2005-08-24 | 山东博特光电技术有限公司 | Semiconductor laser characteristic parameter testing device |
| JP2006059856A (en) * | 2004-08-17 | 2006-03-02 | Nippon Telegr & Teleph Corp <Ntt> | Device and method for evaluating thermal resistance of semiconductor laser |
| JP2010107432A (en) * | 2008-10-31 | 2010-05-13 | Fuji Electric Systems Co Ltd | Method of integrated test of semiconductor and semiconductor testing device |
| JP2012225772A (en) * | 2011-04-20 | 2012-11-15 | Renesas Electronics Corp | Semiconductor device inspection method and inspection device |
| CN103278758A (en) * | 2013-04-19 | 2013-09-04 | 国家电网公司 | Method and device for testing turn-off characteristics of high power thyristor |
| CN105572559A (en) * | 2016-03-09 | 2016-05-11 | 西安后羿半导体科技有限公司 | Power MOSFET packaging thermal resistance comparison device |
| CN107345996A (en) * | 2017-07-11 | 2017-11-14 | 北京华峰测控技术有限公司 | FET test circuit and method of testing |
| JP2019052855A (en) * | 2017-09-12 | 2019-04-04 | アイシン精機株式会社 | Thermal resistance measuring apparatus and thermal resistance measuring method |
| CN109828193A (en) * | 2019-01-28 | 2019-05-31 | 山西大学 | A kind of device for the junction temperature calibration and radiating subassembly Performance Evaluation that bias current dynamic is constant |
| CN210442473U (en) * | 2019-07-12 | 2020-05-01 | 北京华峰测控技术股份有限公司 | Transient thermal resistance test circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5314686B2 (en) * | 2008-06-26 | 2013-10-16 | 株式会社アドバンテスト | Test equipment and driver circuit |
-
2019
- 2019-07-12 CN CN201910631328.6A patent/CN110244211B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85104182A (en) * | 1985-05-28 | 1986-11-26 | 上海市轻工业研究所 | The method of on-line measuring transistor and device |
| CN2039028U (en) * | 1988-08-24 | 1989-06-07 | 浙江大学 | Dynamic-characteristics tester for a thyristor |
| JPH05203698A (en) * | 1992-01-27 | 1993-08-10 | Oki Electric Ind Co Ltd | Method for measuring heat resistance of mesfet |
| JPH0735813A (en) * | 1993-07-22 | 1995-02-07 | Omron Corp | Heat resistance measuring apparatus |
| CN2720457Y (en) * | 2004-07-19 | 2005-08-24 | 山东博特光电技术有限公司 | Semiconductor laser characteristic parameter testing device |
| JP2006059856A (en) * | 2004-08-17 | 2006-03-02 | Nippon Telegr & Teleph Corp <Ntt> | Device and method for evaluating thermal resistance of semiconductor laser |
| JP2010107432A (en) * | 2008-10-31 | 2010-05-13 | Fuji Electric Systems Co Ltd | Method of integrated test of semiconductor and semiconductor testing device |
| JP2012225772A (en) * | 2011-04-20 | 2012-11-15 | Renesas Electronics Corp | Semiconductor device inspection method and inspection device |
| CN103278758A (en) * | 2013-04-19 | 2013-09-04 | 国家电网公司 | Method and device for testing turn-off characteristics of high power thyristor |
| CN105572559A (en) * | 2016-03-09 | 2016-05-11 | 西安后羿半导体科技有限公司 | Power MOSFET packaging thermal resistance comparison device |
| CN107345996A (en) * | 2017-07-11 | 2017-11-14 | 北京华峰测控技术有限公司 | FET test circuit and method of testing |
| JP2019052855A (en) * | 2017-09-12 | 2019-04-04 | アイシン精機株式会社 | Thermal resistance measuring apparatus and thermal resistance measuring method |
| CN109828193A (en) * | 2019-01-28 | 2019-05-31 | 山西大学 | A kind of device for the junction temperature calibration and radiating subassembly Performance Evaluation that bias current dynamic is constant |
| CN210442473U (en) * | 2019-07-12 | 2020-05-01 | 北京华峰测控技术股份有限公司 | Transient thermal resistance test circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110244211A (en) | 2019-09-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201886132U (en) | Switch circuit for detecting voltage of battery | |
| CN1980059B (en) | Current limited bilateral MOSFET switch | |
| CN110244211B (en) | Transient thermal resistance test circuit | |
| WO2020135197A1 (en) | Circuit for testing dynamic resistance of gallium nitride device | |
| TWI494732B (en) | Hysteresis led driver with improved iled accuracy | |
| CN100542032C (en) | The flow restricter of output transistor | |
| CN107041166B (en) | Power inverter and semiconductor device | |
| CN204389660U (en) | A kind of electronic load device based on field effect tubular type | |
| CN2921917Y (en) | Electric current mirror and illuminating device using the same current mirror | |
| CN110419015A (en) | Method and apparatus for using floating bandgap reference and temperature-compensating to carry out negative output voltage active-clamp | |
| CN104601019A (en) | Smart power module, power device and temperature detection circuit and method of power device | |
| CN210442473U (en) | Transient thermal resistance test circuit | |
| CN212586493U (en) | Transient thermal resistance test circuit | |
| CN108092498A (en) | Over-temperature protection device, method and Switching Power Supply | |
| US20170122987A1 (en) | Highly Accurate Current Measurement | |
| CN104035465A (en) | Voltage regulator | |
| KR20150005416A (en) | MIT Transistor system including critical current supply devices | |
| CN110176853A (en) | Current sense device and associated method | |
| CN106656067B (en) | High-voltage high-power amplifying circuit designed by common operational amplifier | |
| CN103729012A (en) | High-voltage-resistant circuit and high-voltage-resistant constant current source circuit | |
| JP6666716B2 (en) | Temperature detection circuit and circuit device using the same | |
| CN110798199A (en) | MOS tube driving circuit | |
| Soldati et al. | A voltage controlled power resistor circuit for active gate driving of wide-bandgap power devices | |
| CN208623550U (en) | A kind of switching-on and switching-off state detection circuit for ground wire BUCK type Switching Power Supply of floating | |
| CN103872906A (en) | Control device and control method of communication power supply |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |