CN103872906A - Control device and control method of communication power supply - Google Patents
Control device and control method of communication power supply Download PDFInfo
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- CN103872906A CN103872906A CN201210550212.8A CN201210550212A CN103872906A CN 103872906 A CN103872906 A CN 103872906A CN 201210550212 A CN201210550212 A CN 201210550212A CN 103872906 A CN103872906 A CN 103872906A
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Abstract
The invention provides a control device and a control method of a communication power supply. The control device comprises a voltage divider, an operational amplifier and an alarm detection circuit, wherein the voltage divider consists of an FET (Field Effect Transistor) and a matched resistor which is connected with the FET in series, and the voltage divider is used for dividing voltage from an auxiliary power supply; the operational amplifier is connected with the voltage divider and is used for controlling the switching on and the switching off of the FET according to the voltage of the FET; the alarm detection circuit is connected with the voltage divider and the operational amplifier and is used for sending an alarm signal indicating that a current communication power supply is in a stop working state when the FET is detected to be switched off. According to the control device and the control method of the communication power supply, provided by the invention, the effect of increasing the reliability of an ORING circuit is achieved.
Description
Technical field
The present invention relates to the communications field, in particular to a kind of control device and method of communication power supply.
Background technology
In the power supply system for communications, in order to ensure the reliability of system, often adopt the application of power supply 1+1 or N+1 backup in the occasion of system power supply application.Multiple power supplys are worked must take reasonably to close when road (ORING) circuit is guaranteed the reliability of circuit simultaneously power supply are not interacted each other.
In the ORING circuit forming at existing analogue device, realize mainly with diode or control chip control metal-oxide half field effect transistor (Metal-Oxide-Semiconductor Field-Effect Transistor, referred to as MOSFET).Do simple introduction below:
(1) adopt the ORING circuit of diode design to be applicable to the occasion that electric current is less, sort circuit need not be controlled separately, and (please refer to Fig. 1, Fig. 1 realizes ORING circuit theory schematic diagram according to the diode of correlation technique) simple in structure, has very high reliability.But because diode current flow pressure drop is larger, the hear rate on corresponding each diode is also larger, limited by hear rate, this scheme can only be applied in the occasion of little electric current.Taking conventional diode as example, for the diode of D2PAK encapsulation, be subject to the restriction of conduction voltage drop, in the time that On current Io is only 3A, its conduction voltage drop Vdrop is 0.5V, and power consumption has just reached 1.5W, and the larger power consumption of diode has caused us under the occasion of large electric current, to apply thus.
(2) occasion of large electric current application, in order to solve the problem of diode heating, has adopted the control circuit taking MOSFET as core devices.MOSFET is little because of its internal resistance in ORING circuit, and conduction voltage drop is less, and caloric value is low and be widely used.In application, the application of MOSFET ORING controller is comparatively general at present.Please also refer to Fig. 2, Fig. 3, Fig. 2 realizes MOSFET ORING circuit and current trend schematic diagram according to the controller of correlation technique, and Fig. 3 is the controller internal comparator part principle schematic according to correlation technique.As shown in Figure 3, the operation principle of controller internal comparator is: this chip internal integrated transporting discharging, amplifier is used as hysteresis loop comparator, the amplifier input INN of chip, source electrode and the drain electrode that INP detects respectively MOSFET, pressure reduction (INP-INN) has determined the operating state of MOSFET.
Fig. 4 is according to the schematic diagram of the hysteresis working curve of the comparator of correlation technique, and as shown in Figure 4, the hysteresis working curve of this comparator can reflect that the course of work of controller internal comparator is as follows:
(1) VOUT output high level in the time of VINP-VINN>VHYST-|VOS|, VOUT output low level in the time of VINP-VINN<-|VOS|, wherein VHYST is hysteresis value, VOS is threshold value;
(2) turn on process: the first conducting of body diode of initial MOSFET, electric current diode in MOSFET body forms loop, and the pressure drop (VINP-VINN) at metal-oxide-semiconductor two ends exceedes VHYST-|VOS| value, and VOUT exports high level, the reliable conducting of MOSFET;
(3) turn off process: in the time of pressure drop (VINP-VINN) <-|VOS| at metal-oxide-semiconductor two ends, VOUT output low level realizes the shutoff of MOSFET, the electric current of the MOSFET that flows through is for oppositely and reach predetermined value and just can realize reliable turn-off.
At present, the high withstand voltage MOSFET of conventional large electric current, internal resistance Rdson is not from several milliohms to tens milliohms etc., in large operating current situation, conventionally need to choose the MOSFET of little internal resistance, from normal operating conditions to reverse current, reach (VOS/Rdson) magnitude of voltage and can realize reliable turn-off.Before this, MOSFET as shown in Figure 2 in conducting state, normally work by B road power supply always, and A road power supply needs reverse current I to reach enough values just can to turn-off.In the time that I cannot reach required value, reverse current is from-48VGND warning circuit arrival-the 48VA that flows through, and forms closed-loop path from-48VA after MOSFET VT1 through MOSFET VT2 arrival-48VB.
Now,-48VA is connected through the MOSFET of two conductings with-48VB,-48VA and-be approximately-48VB of voltage difference between 48VGND and-voltage difference between 48VGND, that is: at MOSFET(VT1) there is the anti-problem of filling with of voltage, now abnormal A road power supply because the existence of this voltage, alarm detection circuit cannot detect abnormal conditions, host computer None-identified fault, indicator light shows normal, until an other power cut-off, system power failure, cannot reach the object of power supply backup.
The problem that causes power supply backup failure for there is anti-filling of voltage on field-effect transistor MOSFET in correlation technique, not yet proposes effective solution at present.
Summary of the invention
The invention provides a kind of control device and method of communication power supply, at least to address the above problem.
According to an aspect of the present invention, provide a kind of control device of communication power supply, having comprised: voltage divider, the build-out resistor of connecting by field-effect transistor with field-effect transistor forms, for dividing potential drop from accessory power supply; Operational amplifier, is connected with voltage divider, for according to the turn-on and turn-off of the voltage control field-effect transistor of field-effect transistor; Alarm detection circuit, is connected with voltage divider and operational amplifier, in the time detecting that field-effect transistor turn-offs, sends the alarm signal of the current communication power supply of instruction in the state of quitting work.
Preferably, field-effect transistor is metal oxide layer semiconductor field-effect transistor (MOSFET).
Preferably, the positive input terminal of operational amplifier is connected with the source electrode of MOSFET, and the negative input end of operational amplifier is connected with the drain electrode of MOSFET.
Preferably, the mode that operational amplifier compares by the input terminal voltage between source electrode and the drain electrode of MOSFET that detection is obtained and predefined voltage threshold, conducting or the shutoff of control MOSFET.
Preferably, in the situation that input terminal voltage is less than voltage threshold, operational amplifier output low level, turn-offs MOSFET, otherwise, operational amplifier output high level, the conducting state of maintenance MOSFET.
According to a further aspect in the invention, a kind of control method of communication power supply is provided, comprise: operational amplifier is according to the turn-on and turn-off of the voltage control field-effect transistor of field-effect transistor in voltage divider, wherein, the build-out resistor that voltage divider is connected by field-effect transistor with field-effect transistor forms, for dividing potential drop from accessory power supply; Alarm detection circuit, in the situation that detecting that field-effect transistor has turn-offed, sends the alarm signal of the current communication power supply of instruction in the state of quitting work.
Preferably, field-effect transistor is metal oxide layer semiconductor field-effect transistor (MOSFET).
Preferably, the positive input terminal of operational amplifier is connected with the source electrode of MOSFET, and the negative input end of operational amplifier is connected with the drain electrode of MOSFET.
Preferably, operational amplifier, according to the turn-on and turn-off of the voltage control field-effect transistor of field-effect transistor, comprising: operational amplifier by detection mode obtain MOSFET source electrode, drain electrode between input terminal voltage; In the situation that input terminal voltage is less than predefined voltage threshold, operational amplifier output low level, turn-offs MOSFET, otherwise, operational amplifier output high level, the conducting state of maintenance MOSFET.
By the present invention, adopt by the mode of the turn-on and turn-off of operational amplifier controlling filed effect transistor, solve the problem that has anti-filling of voltage on field-effect transistor (MOSFET) and cause power supply backup failure, just can turn-off the field-effect transistor (MOSFET) in ORING circuit without reverse current, and then reach the effect that improves the reliability in ORING circuit.
Brief description of the drawings
Accompanying drawing described herein is used to provide a further understanding of the present invention, forms the application's a part, and schematic description and description of the present invention is used for explaining the present invention, does not form inappropriate limitation of the present invention.In the accompanying drawings:
Fig. 1 realizes ORING circuit theory schematic diagram according to the diode of correlation technique;
Fig. 2 realizes MOSFET ORING circuit and current trend schematic diagram according to the controller of correlation technique;
Fig. 3 is the controller internal comparator part principle schematic according to correlation technique;
Fig. 4 is according to the schematic diagram of the hysteresis working curve of the comparator of correlation technique;
Fig. 5 is according to the structured flowchart of the control device of the communication power supply of the embodiment of the present invention;
Fig. 6 is the control method flow chart according to the communication power supply of the embodiment of the present invention; And
Fig. 7 is the ORING circuit diagram of operational amplifier control MOSFET according to the preferred embodiment of the invention.
Embodiment
Hereinafter also describe the present invention in detail with reference to accompanying drawing in conjunction with the embodiments.It should be noted that, in the situation that not conflicting, the feature in embodiment and embodiment in the application can combine mutually.
Fig. 5 is according to the structured flowchart of the control device of the communication power supply of the embodiment of the present invention, and as shown in Figure 5, this device comprises: voltage divider 10, operational amplifier 20 and alarm detection circuit 30.Wherein, voltage divider 10, the build-out resistor of connecting by field-effect transistor with field-effect transistor forms, for dividing potential drop from accessory power supply; Operational amplifier 20, is connected with voltage divider, for according to the turn-on and turn-off of the voltage control field-effect transistor of field-effect transistor; Alarm detection circuit 30, is connected with voltage divider 10 and operational amplifier 20, in the time detecting that field-effect transistor turn-offs, sends the alarm signal of the current communication power supply of instruction in the state of quitting work.
In the present embodiment, field-effect transistor is metal oxide layer semiconductor field-effect transistor (MOSFET).
In the present embodiment, the positive input terminal of operational amplifier is connected with the source electrode of MOSFET, and the negative input end of operational amplifier is connected with the drain electrode of MOSFET.
In the present embodiment, the mode that operational amplifier compares by the input terminal voltage between source electrode and the drain electrode of MOSFET that detection is obtained and predefined voltage threshold, conducting or the shutoff of control MOSFET.
In the present embodiment, in the situation that input terminal voltage is less than voltage threshold, operational amplifier output low level, turn-offs MOSFET, otherwise, operational amplifier output high level, the conducting state of maintenance MOSFET.
Fig. 6 is the control method flow chart according to the communication power supply of the embodiment of the present invention, and as shown in Figure 6, the method mainly comprises the following steps (step S602-step S604):
Step S602, operational amplifier is according to the turn-on and turn-off of the voltage control field-effect transistor of field-effect transistor in voltage divider, and wherein, the build-out resistor that voltage divider is connected by field-effect transistor with field-effect transistor forms, for dividing potential drop from accessory power supply;
Step S604, alarm detection circuit, in the situation that detecting that field-effect transistor has turn-offed, sends the alarm signal of the current communication power supply of instruction in the state of quitting work.
Preferably, field-effect transistor is metal oxide layer semiconductor field-effect transistor (MOSFET).
In the present embodiment, the positive input terminal of operational amplifier is connected with the source electrode of MOSFET, and the negative input end of operational amplifier is connected with the drain electrode of MOSFET.
In the present embodiment, operational amplifier, according to the turn-on and turn-off of the voltage control field-effect transistor of field-effect transistor, comprising: operational amplifier by detection mode obtain MOSFET source electrode, drain electrode between input terminal voltage; In the situation that input terminal voltage is less than predefined voltage threshold, operational amplifier output low level, turn-offs MOSFET, otherwise, operational amplifier output high level, the conducting state of maintenance MOSFET.
Control device and the method for the communication power supply that employing above-described embodiment provides, operational amplifier can controlling filed effect transistor turn-on and turn-off, solve the problem that has anti-filling of voltage on field-effect transistor (MOSFET) and cause power supply backup failure, just can turn-off the field-effect transistor (MOSFET) in ORING circuit without reverse current, and then reach the effect that improves the reliability in ORING circuit.
The control device of communication power supply above-described embodiment being provided below in conjunction with preferred embodiment and the control method of communication power supply are further detailed.
What preferred embodiment described below provided can be realized without the device of the anti-ORING of filling circuit and be mainly contained following characteristics by the discrete device (the primary voltage divider that comprises) of operational amplifier (hereinafter to be referred as amplifier) control: A, the 1+1 or the N+1 that replace traditional diode to realize power supply with MOSFET back up; The discrete device of B, the control of employing amplifier is core control circuit.By the MOSFET in ORING circuit is controlled, can realize its reliable turn-on and turn-off, and then reach the object without the anti-ORING of filling circuit.
Fig. 7 is that operational amplifier is put the ORING circuit diagram of controlling MOSFET according to the preferred embodiment of the invention, and as shown in Figure 7, the control device of communication power supply is mainly realized by following constituted mode:
First, taking the output voltage negative terminal of ORING circuit as reference data, MOSFET and build-out resistor series connection from accessory power supply dividing potential drop, access the negative terminal of amplifier as partial pressure device after dividing potential drop, and the anode of amplifier directly accesses from accessory power supply dividing potential drop through build-out resistor.
Amplifier passes through to detect the voltage difference (hereinafter to be referred as pressure reduction) of positive-negative input end, the gate pole control end using output voltage as MOSFET, the turn-on and turn-off of control MOSFET.When large electric current, amplifier can be used as comparator and plays conducting effect; When little electric current, amplifier is operated in linear zone, and output voltage values has determined the internal resistance of MOSFET, and then has realized reliable conducting after forming feedback control loop.When electric current hour, the input pressure reduction of amplifier can be relatively less, therefore MOSFET is operated in linear zone, output voltage is affected by the self-characteristic of amplifier, is generally determined by discharge circuit gain.When shutoff, without reverse current, as long as above-mentioned pressure reduction just can effectively turn-off lower than threshold value, thereby realize the ORING circuit of filling with without anti-.
The preferred embodiment can be applied in high-power large current applications, in actual applications, can adopt one or more MOSFET to form ORING circuit, when adopting MOSFET while being multiple, can adopt the mode of paralleling MOS FET, below only to take ORING circuit that the mode of two MOSFET parallel connections forms to describe (now, internal resistance can be reduced to not enough 2m Ω) as example.
As can be seen from Figure 7, the input negative terminal INA-of amplifier and input anode INA+ connect respectively drain electrode and the source electrode of MOSFET, detect the pressure drop at MOSFET two ends, in the time that the pressure drop detecting is greater than the voltage at resistance R 33 two ends, be that INA-terminal voltage is during lower than INA+ terminal voltage, amplifier output high level, MOSFET conducting.
In the whole course of work, the internal resistance Rdson of MOSFET is less, conduction voltage drop is very low, in the time that the input pressure reduction of amplifier is less, amplifier is operated in linear zone, exports and is determined by the pressure reduction of input voltage and the gain of amplifier, and the product of the two has determined the value of output voltage, now output voltage values can not reach VCC completely, and therefore unloaded time, the driving voltage of MOSFET can be lower.In the situation that electric current is certain, driving voltage reduces, and it is large that Rdson becomes.As can be seen here, the whole course of work is the negative feedback process of a dynamic adjustments.
Rdson is less-and > conduction voltage drop low-G reatT.GreaT.GT driving voltage low-G reatT.GreaT.GTRdson increases, under this degenerative effect, effectively reliable conducting of MOSFET, can learn that by calculating its power consumption also within the range of permission.
From analyzing above, amplifier output low level is turn-offed the condition of MOSFET and is: amplifier positive input terminal voltage Vin+< amplifier negative input end voltage Vin-, taking export-48V is as reference zero, calculates two voltages as follows:
Vin+=VCCB*R39/(R38+R39) (VCCB is accessory power supply);
If the conduction voltage drop of MOSFET is Vm, direction, for from right to left, can be drawn by Kirchhoff's second law: Vin-=VCCB-(VCCB+Vm) * R32/ (R33+R32+R34), gets R32=R38, R39=R34
Can draw Vm<VCCB*R33/(R34+R32 by Vin+<Vin-) amplifier gets final product output low level, and realize and turn-off MOSFET.That is, conduction voltage drop be only less than one can arrange on the occasion of just can effectively turn-offing MOSFET, thereby avoid the anti-voltage of filling with.
Otherwise, as Vm>VCCB*R33/(R34+R32) time Vin+>Vin-, amplifier has output.When pressure reduction between Vin+ and Vin-is little, amplifier is operated in linear zone, output voltage is lower, the Rdson of MOSFET can be relatively large, can work reliably in order to ensure MOSFET, can consider its pressure drop and power consumption: multiplication factor and accessory power supply VCCB by amplifier can calculate, the pressure reduction VB of millivolt rank just can make amplifier output reach VCCB.
Can be obtained as drawn a conclusion by aforementioned analysis:
A, Vm<VCCB*R33/ (R34+R32), Vgs=0, Rdson infinity, Pw=0;
B, VCCB*R33/(R34+R32) <Vm<VCCB*R33/(R34+R32)+VB, Vgs<VCC, Rdson increases and reduces with driving voltage, Pw=Vm*Id;
C, Vm>VCCB*R33/(R34+R32)+VB, Vgs=VCC, Pw=Id*Id*Rdson, wherein, Pw is power consumption, and Vgs is MOSFET driving voltage, and Id is On current.
In actual applications, can be by selecting rational parameter to guarantee that MOSFET its power consumption in the time there is no complete conducting still meets hear rate requirement.
In the test process to without anti-filling ORING circuit, can adopt the backup mode (two power supply parallel connections) of power supply 1+1, monitor and can find out by the driving voltage of the MOSFET to two power supplys and by the input terminal voltage of power cutoff, the driving voltage of two power supplys can switch rapidly, MOSFET is turn-on and turn-off smoothly, in the time that input driving voltage reduces rapidly, carry out rapidly and turn-off operation, and then realize without the anti-ORING of filling circuit.
The scheme that above preferred embodiment provides, compare with respect to realize MOSFET ORING circuit by controller, obtain the progress that also can turn-off the MOSFET in ORING circuit without reverse current, reach the effect of the reliable turn-on and turn-off of the medium and small internal resistance MOSFET of ORING circuit, improved the reliability of ORING circuit.
From above description, can find out, the present invention has realized following technique effect: adopt by the mode of the turn-on and turn-off of operational amplifier controlling filed effect transistor, solve the problem that has anti-filling of voltage on field-effect transistor (MOSFET) and cause power supply backup failure, just can turn-off the field-effect transistor (MOSFET) in ORING circuit without reverse current, and then reach the effect that improves the reliability in ORING circuit.
The foregoing is only the preferred embodiments of the present invention, be not limited to the present invention, for a person skilled in the art, the present invention can have various modifications and variations.Within the spirit and principles in the present invention all, any amendment of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (9)
1. a control device for communication power supply, is characterized in that, comprising:
Voltage divider, the build-out resistor of connecting by field-effect transistor with described field-effect transistor forms, for dividing potential drop from accessory power supply;
Operational amplifier, is connected with described voltage divider, for according to the turn-on and turn-off of field-effect transistor described in the voltage control of described field-effect transistor;
Alarm detection circuit, is connected with described voltage divider and described operational amplifier, in the time detecting that described field-effect transistor turn-offs, sends the alarm signal of the current communication power supply of instruction in the state of quitting work.
2. device according to claim 1, is characterized in that, described field-effect transistor is metal oxide layer semiconductor field-effect transistor MOSFET.
3. device according to claim 2, is characterized in that, the positive input terminal of described operational amplifier is connected with the source electrode of described MOSFET, and the negative input end of described operational amplifier is connected with the drain electrode of described MOSFET.
4. device according to claim 3, it is characterized in that, the mode that described operational amplifier compares by the input terminal voltage between source electrode and the drain electrode of described MOSFET that detection is obtained and predefined voltage threshold, controls conducting or the shutoff of described MOSFET.
5. device according to claim 4, is characterized in that, in the situation that described input terminal voltage is less than described voltage threshold, described operational amplifier output low level, turn-offs described MOSFET, otherwise, described operational amplifier is exported high level, keeps the conducting state of described MOSFET.
6. a control method for communication power supply, is characterized in that, comprising:
Operational amplifier is according to the turn-on and turn-off of field-effect transistor described in the voltage control of field-effect transistor in voltage divider, wherein, the build-out resistor that described voltage divider is connected by described field-effect transistor with described field-effect transistor forms, for dividing potential drop from accessory power supply;
Alarm detection circuit, in the situation that detecting that described field-effect transistor has turn-offed, sends the alarm signal of the current communication power supply of instruction in the state of quitting work.
7. method according to claim 6, is characterized in that, described field-effect transistor is metal oxide layer semiconductor field-effect transistor MOSFET.
8. method according to claim 7, is characterized in that, the positive input terminal of described operational amplifier is connected with the source electrode of described MOSFET, and the negative input end of described operational amplifier is connected with the drain electrode of described MOSFET.
9. method according to claim 8, is characterized in that, described operational amplifier, according to the turn-on and turn-off of field-effect transistor described in the voltage control of described field-effect transistor, comprising:
Described operational amplifier by detection mode obtain described MOSFET source electrode, drain electrode between input terminal voltage;
In the situation that described input terminal voltage is less than predefined voltage threshold, described operational amplifier output low level, turn-offs described MOSFET, otherwise described operational amplifier is exported high level, keeps the conducting state of described MOSFET.
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| CN108957108A (en) * | 2018-08-17 | 2018-12-07 | 无锡麟力科技有限公司 | A kind of mains failure detection circuit |
| CN109149988A (en) * | 2018-08-10 | 2019-01-04 | 艾思玛新能源技术（江苏）有限公司 | A kind of accessory power supply |
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| CN103872906B (en) | 2018-08-24 |
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