WO2020211326A1 - Method for establishing nonlinear segmented time sequence model of high-frequency dynamic loss of gan hemt device - Google Patents

Method for establishing nonlinear segmented time sequence model of high-frequency dynamic loss of gan hemt device Download PDF

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WO2020211326A1
WO2020211326A1 PCT/CN2019/114217 CN2019114217W WO2020211326A1 WO 2020211326 A1 WO2020211326 A1 WO 2020211326A1 CN 2019114217 W CN2019114217 W CN 2019114217W WO 2020211326 A1 WO2020211326 A1 WO 2020211326A1
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turn
loss
voltage
current
drain
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French (fr)
Chinese (zh)
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陈敦军
王蕊
雷建明
张�荣
郑有炓
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南京大学
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/28—Measuring attenuation, gain, phase shift or derived characteristics of electric four pole networks, i.e. two-port networks; Measuring transient response
    • G01R27/32—Measuring attenuation, gain, phase shift or derived characteristics of electric four pole networks, i.e. two-port networks; Measuring transient response in circuits having distributed constants, e.g. having very long conductors or involving high frequencies
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/36—Circuit design at the analogue level
    • G06F30/367—Design verification, e.g. using simulation, simulation program with integrated circuit emphasis [SPICE], direct methods or relaxation methods

Definitions

  • the invention relates to a non-linear segmented time sequence measurement method for high frequency dynamic loss of a GaN HEMT device.
  • AlGaN/GaN HEMT devices are a new generation of wide-bandgap semiconductor devices following silicon-based and silicon carbide-based MOSFETs. They have unparalleled superior performance of silicon-based and lower cost compared with silicon carbide-based MOSFETs. Because AlGaN and GaN materials have the characteristics of wide band gap, polarization effect and conduction band discontinuity, the prepared AlGaN/GaN HEMT devices have high frequency, high withstand voltage, high current, high temperature resistance, and strong anti-interference Field effect transistors with superior electrical performance. In particular, the material forbidden bandwidth and high dielectric constant between layers of HEMT devices can control the junction capacitance to a very low level.
  • the input capacitance (Ciss), output capacitance (Coss) and feedback capacitance (Crss) of AlGaN/GaN HEMT devices ) are usually in the order of tens of pF, tens of pF, and several pF, which are far lower than the thousands of pF, hundreds of pF, and hundreds of pF of silicon-based and silicon carbide-based MOSFETs, so HEMT performs in terms of high frequency Excellent, has great prospects in high frequency applications (including switching power supplies of several MHz). Because of this, the research on the dynamic performance of GaN HEMT devices and the establishment of a dynamic power loss model for HEMT devices have an important guiding role in the high-frequency practical applications of HEMT devices.
  • GaN HEMT devices have unique dynamic electrical characteristics compared to traditional Si/SiC devices during dynamic switching operations, which are mainly reflected in the switching operation: GaN HEMT devices There is no reverse recovery feature; its parasitic capacitance and parasitic inductance in the switching circuit are smaller; the parasitic parameters of the device during the switching process show a non-linear change with the operating voltage and operating current, and it is also accompanied by problems such as increased dynamic impedance .
  • I ds , I dson_rms and I rr are the measured drain current of the device, the rms value of the drain current in the on state of the device and the reverse recovery current of the device;
  • V ds , V gs are the device respectively Drain voltage, gate voltage;
  • f s is the switching frequency of the device;
  • t on , t off and t rr are the time of device on, device off and device reverse recovery respectively;
  • C oss is the output capacitance of the device;
  • Q g Is the gate charge of the device; k th and k f are respectively: temperature coefficients related to the on-resistance and reverse current of the device.
  • the first term characterizes the crossover loss of the drain current I ds and the drain voltage V ds during the switching process of the device;
  • the second term characterizes the output capacitance C oss of the device during the switching process of the device The energy loss brought about;
  • the third and fourth items respectively characterize the conduction loss and driving loss of the device;
  • the fifth item characterizes the loss caused by the reverse recovery caused by the body diode of the device itself.
  • GaN HEMT devices have unique electrical characteristics compared to traditional Si/SiC power electronic devices, which are mainly reflected in: GaN HEMT devices have no reverse recovery characteristics; their parasitic capacitance and The parasitic inductance value is smaller; the parasitic parameters of the device in the switching process show a nonlinear change with the change of the operating voltage and operating current, and it is also accompanied by problems such as an increase in dynamic impedance caused by the trapping effect. Therefore, for GaN HEMT devices, directly applying the dynamic loss model of Si or SiC power electronic devices cannot accurately characterize and calculate their dynamic switching losses.
  • the purpose of the present invention is to provide a method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of a GaN HEMT device.
  • a method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of GaN HEMT devices the steps of which include:
  • P total P off +P con +P turn_on +P turn_off ;
  • the parameters that affect the dynamic on-resistance change during high-frequency operation of the device are used to calculate the turn-on loss P con .
  • the output capacitance C OSS of the HEMT device is replaced by the capacitance characterization form C gd_vf of the gate charge Q g .
  • step (1)
  • the HEMT device is in the off state during the time periods t 0 -t 1 , t 11 -t 12 and t 10 -t 11 .
  • the drain voltage V ds is in a high voltage state, and the device will generate leakage current under the high voltage, causing loss P off_n .
  • f s , T, D, and I lk are the switching frequency, duty cycle, duty cycle, and leakage current of the HEMT device during turn-off, respectively
  • I r is the reverse current
  • ⁇ V is the oscillation voltage of the device at this stage
  • V ds_pk is the peak value of the drain voltage
  • V ds_off is the value when the drain voltage is turned off
  • the loss model P off of the device is:
  • P off P off_n + P off_vx .
  • step (2)
  • the HEMT device is in the on state during the period t 4- t 7. At this time, the effective value of the current through the device I drain_rms is:
  • the present invention modifies the device turn-on state model to:
  • k dv , k df , k dd , k cu , and k th_R are the linear coefficients of voltage, frequency, duty cycle, current, and temperature at this stage, respectively, I drain_rms is the effective value of the drain current through the device, R dson_DC is the on-resistance of the device in the on-state.
  • step (3) during the on-state transformation of the device, the crossover of the drain voltage and the leakage current of the device will bring losses, and the output capacitance of the device will also bring losses.
  • the turn-on transition state of the HEMT device from off to on is divided into three time periods, specifically t Three periods of 1- t 2 , t 2- t 3 and t 3- t 4 .
  • the first time period is when the HEMT device is turned off to initially turned on, which is recorded as the t 1 -t 2 stage, the drain current I ds is in a linearly rising state, rising from 0 at time t 1 to Ist a at time t 2 At the same time, the drain voltage V ds drops to the voltage V r level of t 2 under the influence of di/dt due to parasitic inductance.
  • the device turn-on conversion loss P turn_on_cr during this time period is calculated as:
  • R turn_on_cr is the on-resistance of the device in the on-transition state
  • ⁇ V ds is the change in drain voltage in this state
  • ⁇ I channel is the change in channel current in this state
  • k dv , k df , K dd , k cu , and k th_R are the linear coefficients of voltage, frequency, duty cycle, current and temperature, respectively
  • L eff_Gate and W eff_Gate are the effective channel length and width respectively
  • ⁇ s is the gallium nitride electron Mobility
  • C gs is the device gate-source capacitance
  • I sta is the initial current
  • V drive_H is the gate drive voltage when the device is turned on
  • L s is the series inductance between the device source terminal and ground
  • V th is the device gate threshold Voltage
  • g m is the transconductance of the device
  • V mr is the Miller plateau voltage when the device is turned on
  • the second time period is the further turn-on period of the device, which is marked as t 2 -t 3 period.
  • the current flowing through the device through the inductive load further increases.
  • the drain voltage drops greatly.
  • the high voltage state drops to the gate threshold turn-on voltage of the device, and at the same time the stray inductance L stray and the output capacitor C oss in the circuit resonate, and the drain current I ds oscillates.
  • the drain voltage V ds decreases more than the first time period.
  • the method of replacing the capacitance C oss with the gate-drain charge Q gd to obtain a new capacitance characterization form C gd_vf is used to calculate the loss.
  • ⁇ V for a gate voltage change amount of phase V r gate voltage of the reference value for this stage, L stray stray inductance of the circuit, C stray stray capacitance of the circuit, Is the average channel current, Q gd of the gate-drain charge, R dson of the device on-resistance, R g_on gate driver pull-up resistor.
  • the third time period is marked as t 3 -t 4 , the drain voltage V ds drops below the threshold voltage V th , the device enters the linear region, and the gate voltage remains at the Miller plateau voltage V mr .
  • the duration of this time period The turn-on voltage V on_r and loss P turn_on_mr of the device in this stage are:
  • V on_r I sta R dson k dv k df k dd k th_R
  • P turn_on (measured) P turn_on_cr + P turn_on_vf + P turn_on_mr .
  • step (3) during the turn-on transition of the device, it is the channel current of the device that has a close influence on the switching loss of the device, and the actual channel current I channel is the drain current I drain and the output capacitor C oss discharge
  • the sum of current that is, including the device drain-source capacitance current I Cds and the gate drain capacitance current I Cgd ):
  • I channel I ds +I Cds +I Cgd ⁇ I ds +I Cds
  • step (4)
  • the crossover of the drain voltage and the leakage current of the device causes loss.
  • the turn-on transition state of the HEMT device from on to off is divided into three time periods, specifically t There are three periods of 7- t 8 , t 8- t 9 and t 9- t 10 .
  • the device starts to switch from on to off, which is marked as t 7 -t 8.
  • the drain voltage V ds starts to rise while the leakage current I ds basically remains unchanged.
  • V on_f I pk R dson k dv k df k dd k th_R
  • V mf is the Miller plateau voltage when the device is turned off
  • V drive_L is the gate drive voltage when the device is turned off
  • R g_off is the pull-down resistance of the gate drive
  • I pk is the peak current.
  • the second time period is denoted as t 8 -t 9.
  • the drain voltage rises significantly to the turn-off voltage V ds_off , and the rising amplitude is greater than the first time period of step (4), and the leakage current begins to drop to I r .
  • the small drop in current is caused by charging other devices; the overall electrical parameter performance during this period is similar to the time period t 2 -t 3 , and the charging time of the output capacitor C oss related to current charging in this period can no longer be ignored. Therefore, in this time period range, the time period length t 8 -t 9 , Ir and loss P turn_off_vr are respectively:
  • dV ds is the variation of the drain voltage V ds in the time period
  • dt is the duration of the time period
  • the third time period is denoted as t 9 -t 10 , the leakage current drops sharply, and the decrease is greater than the second time period, and the leakage voltage is at an oscillating and relatively stable high voltage level.
  • the time period length is t 9 -t 10. Loss P turn_off_cf are:
  • P turn_off(measured) P turn_off_mf +P turn_off_vr +P turn_off_cf
  • I pk and I r are the measured current values when the actual device is switched off, not the actual channel current I channel inside the HEMT device, and the actual channel current I channel is the measured leakage current Subtract the current that charges the output capacitor C oss (that is, including the device drain-source capacitance current I Cds and the gate drain capacitance current I Cgd ):
  • I channel I ds -I Cds -I Cgd ⁇ I ds -I Cds
  • step (4) considering the calculated loss of charging the output capacitor C oss , P turn_off_char :
  • I channel I ds -I Cds -I Cgd ⁇ I ds -I Cds
  • P total P off +P con +P turn_on +P turn_off .
  • GaN HEMT devices the quality of the grown crystals cannot be perfect, and the material will still have defects.
  • the defects in the surface state of the device and the barrier layer will trap two electrons. Gas electrons cause the on-resistance of the device to increase, which is the trapping effect of GaN HEMT devices.
  • the release time of electrons trapped by defects under the trapping effect is in the ns level, so when the device works at a higher operating frequency (several MHz), the electrons trapped by the defect in a short time will not be released back into the two-dimensional electron gas.
  • the present invention can obtain the extraction of the linear coefficient of dynamic on-resistance that varies with operating voltage, operating frequency, pulse signal duty cycle, operating current, and device temperature.
  • the present invention improves the traditional segmented model based on the switching loss of Si/SiC power electronic devices. According to the electrical parameter state of the device at different periods during the switching process, it is specifically divided into on and off There are a total of four working states of off, on conversion and off conversion, which are specifically subdivided into 12 time sequences. A dynamic loss nonlinear segmented time sequence model for GaN HEMT devices is established.
  • the present invention adopts the method of replacing the capacitor C oss with the gate charge Q g , which avoids the calculation difficulty of the capacitance value changing with the voltage and the inaccurate loss result.
  • Figure 1 is a timing diagram of a non-linear segmented timing model of GaN HEMT device high-frequency dynamic loss.
  • Figure 2 is a circuit diagram of GaN HEMT device dynamic impedance extraction.
  • Figure 3 is a comparison and characterization circuit diagram of the difference between the drain current and the actual channel current of the GaN HEMT device.
  • the method for establishing the non-linear segmented timing model of the high frequency dynamic loss of the GaN HEMT device defines the working mode of the HEMT switch tube according to the value of the initial current I sta of the device. Specifically:
  • I sta > 0 is defined as CCM (continuous current mode), that is, continuous current mode.
  • the operation is performed under the four main working stages of turn-off, turn-on, turn-on conversion, and turn-off conversion.
  • the specific changes are subdivided into 12 working periods from t 1 to t 12.
  • the timing diagram of the specific model is shown in Figure 1:
  • the steps include:
  • the HEMT device is in the off state during the time periods t 0- t 1 , t 11- t 12 and t 10- t 11 .
  • the drain voltage V ds is in a high voltage state, and the device will generate leakage current under the high voltage, causing loss P off_n .
  • f s , T, D, and I lk are the switching operating frequency, duty cycle, duty cycle, and device leakage current of the HEMT device during turn-off, respectively.
  • I r is the reverse current
  • ⁇ V is the oscillation voltage of the device at this stage
  • V ds_pk is the peak value of the drain voltage
  • V ds_off is the value when the drain voltage is turned off
  • the loss model P off of the device is:
  • P off P off_n + P off_vx .
  • the HEMT device is in the on state during the period t 4 -t 7. At this time, the effective value of the current through the device I drain_rms is:
  • the turn-on loss P con of the device is:
  • k dv , k df , k dd , k cu , and k th_R are the linear coefficients of voltage, frequency, duty cycle, current and temperature at this stage respectively
  • I drain_rms is the effective value of the current passing through the device
  • Rdson_DC is The on resistance of the device in the on state.
  • the turn-on transition state of the HEMT device from off to on is divided into three time periods, specifically t Three periods of 1- t 2 , t 2- t 3 and t 3- t 4 .
  • R turn_on_cr is the on-resistance of the device in the on-transition state
  • ⁇ V ds is the change in drain voltage in this state
  • ⁇ I channel is the change in channel current in this state
  • k dv , k df , k dd , k cu , k th_R are the linear coefficients of voltage, frequency, duty cycle, current and temperature at this stage
  • L eff_Gate and W eff_Gate are the effective channel length and width, respectively
  • ⁇ s is the electron migration of gallium nitride
  • C gs is the device gate-source capacitance
  • I sta is the initial current
  • V drive_H is the gate drive voltage when the device is turned on
  • L s is the series inductance between the device source terminal and ground
  • V th is the device gate threshold voltage
  • G m is the transconductance of the device
  • V mr is the Miller plateau voltage when the device is turned on
  • K lag is the fitting coefficient of the gate turn-on delay of the device.
  • the device is further turned on, and the current flowing through the device through the inductive load further increases.
  • the drain electrode voltage drops greatly, from the high voltage state to the gate threshold of the device.
  • the stray inductance L stray and the output capacitor C oss in the circuit resonate, causing the drain current I ds to oscillate.
  • the drain voltage V ds decreases more than the first time period.
  • the present invention adopts The method in which the gate-drain charge Q gd replaces the capacitor C oss to obtain a new capacitor characterization form C gd_vf avoids the difficulty and inaccuracy of the calculation of the capacitance value changing with the voltage.
  • the calculation methods of the device capacitance C gd_vf , the length of the time period t 2 -t 3 , the average channel current I vf and the loss P turn_on_vf in the time period are respectively:
  • ⁇ V for a gate voltage change amount of phase V r gate voltage of the reference value for this stage, L stray stray inductance of the circuit, C stray stray capacitance of the circuit, Is the average channel current, Q gd of the gate-drain charge, R dson of the device on-resistance, R g_on gate driver pull-up resistor.
  • V on_r I sta R dson k dv k df k dd k th_R
  • P turn_on(measured) P turn_on_cr +P turn_on_vf +P turn_on_mr
  • the actual channel current I channel is the drain current I ds and the output capacitor C oss discharge current (that is, the device drain-source capacitance The sum of the current I Cds and the gate leakage capacitance current I Cgd ):
  • I channel I ds +I Cds +I Cgd ⁇ I ds +I Cds
  • V ds_off is the drain voltage when the device is turned off.
  • the device is in the off transition state from on to off.
  • the gate voltage V gs the drain voltage V ds , and the drain current I ds , which are specifically constructed in the three time periods t 7- t 8 , t 8- t 9 and t 9- t 10 mold.
  • V on_f I pk R dson k dv k df k dd k th_R
  • V mf is the Miller plateau voltage when the device is turned off
  • V drive_L is the gate drive voltage when the device is turned off
  • R g_off is the pull-down resistance of the gate drive
  • I pk is the peak current.
  • the drain voltage rises sharply to the turn-off voltage V ds_off , and the rise is greater than the first period of step (4), the leakage current begins to drop to I r , and the small decrease in current during this period is for other It is caused by the charging of the device; the overall performance of the electrical parameters during this period is similar to the time period t 2 -t 3 , and the charging time of the output capacitor C oss related to current charging in this period can no longer be ignored. Therefore, in this time period, the time period length, Ir and loss P turn_off_vr are respectively:
  • dV ds is the variation of the drain voltage V ds in the time period
  • dt is the duration of the time period
  • the time period length and loss P turn_off_cf are respectively:
  • the total turn-on state loss under the measurement is the sum of each part P turn_off(measured) :
  • P turn_off(measured) P turn_off_mf +P turn_off_vr +P turn_off_cf
  • I pk and I r are the measured current values when the actual device is switched off, not the actual channel current I channel inside the HEMT device, and the actual channel current I channel is the measured drain
  • the current minus the current that charges the output capacitor C oss that is, includes the device drain-source capacitance current I Cds and the gate drain capacitance current I Cgd ):
  • I channel I ds -I Cds -I Cgd ⁇ I ds -I Cds
  • the AlGaN/GaN HEMT device dynamic impedance extraction circuit used in this embodiment includes: the AlGaN/GaN HEMT device to be tested, the power input unit V Bulk of the AlGaN/GaN HEMT device to be tested, the resistive load R LOAD , and the constant current Unit I 1 , power supply input unit VCC of constant current unit I 1 , isolation diodes D 1 and D 2 , freewheeling diode D 3 , anti-reverse diode D 5 , clamp and freewheeling diode ZD 1 , drive unit, damping resistor R 1 and R 2 , load resistance R t , the power supply input unit V Bulk supplies power to the drain level of the AlGaN/GaN HEMT device, and a resistive load is also connected in series between V Bulk and the drain level of the AlGaN/GaN HEMT device R LOAD , the source of the AlGaN/GaN HEMT device is grounded, the
  • This circuit adopts double diode isolation (DDI) method to obtain higher measurement accuracy.
  • all functional devices in the circuit adopt devices with low parasitic capacitance, which improves high-frequency response.
  • double isolation diodes D 1 and D 2 choose UF4007 (1A/1000V), its parasitic capacitance is less than 40pF when the voltage stress is below 10V, and its reverse recovery time (trr) is less than 100ns.
  • the clamp and freewheeling diodes D 3 and ZD 1 choose 1N4148 (150mA/100V) and general Zener diodes (5V/0.5W).
  • the parasitic capacitance is only 0.9pF when the voltage stress is below 10V, and its t rr are all less than 5ns.
  • the constant current I 1 consists of a 5V constant voltage source and a 3mA or lower constant current diode.
  • the constant current diode is actually a junction transistor with a short-circuited gate and source, so it can achieve a constant current in a wide voltage range.
  • a current verification circuit for a GaN HEMT device used in this embodiment includes a GaN HEMT device, a circuit drive module composed of a digital pulse signal generator PWM, a gate pull-up drive resistor R g_on , a gate pull-down drive resistor R g_off , two Two low-voltage Schottky diodes, the gate pull-up drive resistor R g_on is connected in series with a low-voltage Schottky diode, the gate pull-down drive resistor R g_off is connected in series with another low-voltage Schottky diode, and then the two are connected in series with the digital Between the pulse signal generating source PWM and the gate terminal of the GaN HEMT device.
  • an external capacitor C'ds in parallel with the source and drain terminals of the GaN HEMT device. It also includes an inductive load L1, a freewheeling diode D1, a load voltage V load, and a device drain power supply V Bulk .
  • the GaN HEMT device is connected in series with the inductive load L1, a freewheeling diode D1, a load voltage V load, and a device drain power supply V Bulk.
  • Freewheeling diode D1 in series with the load voltage V Load, inductive load L1 is connected in parallel a freewheeling diode D1 and the load voltage V Load at both ends, connected in series with the drain supply device Bulk V, V drain supply device Bulk ground.
  • HEMT device Q 1 assumes the source-drain parasitic capacitance C ds does not exist, as the source and drain ends parallel external source-drain parasitic capacitance C 'ds as the source-drain parasitic capacitance of the device, consisting of an analog device part Q' 1 were measured. Although the parallel connection of capacitors outside the HEMT will cause the measured drain current I ds and the analog channel current I channel to be too large, this method can be used to compare the difference between the drain current of the HEMT device and the actual channel current.
  • the actual effect of parasitic capacitance parameters on the dynamic switching operation of the device is confirmed, that is, under certain operating conditions, the actual measurement and comparison of the source and magnitude of the difference between the drain current and the channel current provide support for the establishment of the GaN HEMT dynamic switching loss model.

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Abstract

Disclosed is a method for establishing a nonlinear segmented time sequence model of a high-frequency dynamic loss, applicable to a GaN HEMT device. According to electrical parameter states of different time periods in a switching-on/switching-off process of the device, a loss is specifically calculated in four stages of switching-on, switching-off, switching-on conversion and switching-off conversion. During a modeling process, the problem of a dynamic impedance increasing under the specific high-frequency working of the device is taken into consideration, and accurate extraction of parameters influencing a change in a dynamic conduction impedance during the high-frequency working of the device is realized by means of building a circuit; and during the modeling process, in the present invention, a method of replacing a device output capacitance with a gate charge to directly calculate a loss is used, such that complex and inaccurate calculation caused by a capacitance value changing along with a voltage is prevented. In addition, an external capacitor is connected in parallel between a drain electrode and a source electrode outside the device for the first time in the present invention to compare the difference between a drain electrode current of the device and an actual channel current, and the specific source generating the difference and the real influence on a switching-on/switching-off loss are analyzed, such that correction of the loss calculation of the model is realized.

Description

GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法Method for establishing nonlinear segmented time series model of high frequency dynamic loss of GaN HEMT device 技术领域Technical field
本发明涉及一种GaN HEMT器件高频动态损耗的非线性分段时序测量方法。The invention relates to a non-linear segmented time sequence measurement method for high frequency dynamic loss of a GaN HEMT device.
背景技术Background technique
AlGaN/GaN HEMT器件是继硅基和碳化硅基MOSFET之后的全新一代宽禁带半导体器件，拥有硅基无可比拟的优越性能，相比碳化硅基成本也更低。由于AlGaN、GaN材料具备宽禁带、极化效应和导带不连续性等特点，使得制备得到的AlGaN/GaN HEMT器件是具有高频、高耐压、大电流、高耐温、强抗干扰等优越电气性能的场效应晶体管。特别的，HEMT器件层间材料禁带宽、介电常数高，从而可以将结电容控制到非常低的水平，AlGaN/GaN HEMT器件的输入电容(Ciss)、输出电容(Coss)和反馈电容(Crss)通常分别在数十pF、数十pF、数pF量级，远低于硅基和碳化硅基MOSFET的上千pF、上百pF、上百pF量级，因而HEMT在高频性能方面表现卓越，在高频应用(包括数MHz的开关电源)方面有着远大的前景。正因如此，针对GaN HEMT器件动态性能研究，并建立起HEMT器件动态功率损耗模型，对HEMT器件的高频实际应用有重要的指导作用。AlGaN/GaN HEMT devices are a new generation of wide-bandgap semiconductor devices following silicon-based and silicon carbide-based MOSFETs. They have unparalleled superior performance of silicon-based and lower cost compared with silicon carbide-based MOSFETs. Because AlGaN and GaN materials have the characteristics of wide band gap, polarization effect and conduction band discontinuity, the prepared AlGaN/GaN HEMT devices have high frequency, high withstand voltage, high current, high temperature resistance, and strong anti-interference Field effect transistors with superior electrical performance. In particular, the material forbidden bandwidth and high dielectric constant between layers of HEMT devices can control the junction capacitance to a very low level. The input capacitance (Ciss), output capacitance (Coss) and feedback capacitance (Crss) of AlGaN/GaN HEMT devices ) Are usually in the order of tens of pF, tens of pF, and several pF, which are far lower than the thousands of pF, hundreds of pF, and hundreds of pF of silicon-based and silicon carbide-based MOSFETs, so HEMT performs in terms of high frequency Excellent, has great prospects in high frequency applications (including switching power supplies of several MHz). Because of this, the research on the dynamic performance of GaN HEMT devices and the establishment of a dynamic power loss model for HEMT devices have an important guiding role in the high-frequency practical applications of HEMT devices.
然而，不同与硅基或碳化硅材料的功率电力电子器件，在动态开关工作时，GaN HEMT器件相比传统Si/SiC器件有着独特的动态电学特性，在开关工作中主要体现在：GaN HEMT器件没有反向恢复的特性；其在开关回路中的寄生电容和寄生电感数值更小；器件在开关过程中寄生参数随工作电压和工作电流变化呈现非线性的改变，并且还伴随动态阻抗增加等问题。However, unlike silicon-based or silicon carbide power electronic devices, GaN HEMT devices have unique dynamic electrical characteristics compared to traditional Si/SiC devices during dynamic switching operations, which are mainly reflected in the switching operation: GaN HEMT devices There is no reverse recovery feature; its parasitic capacitance and parasitic inductance in the switching circuit are smaller; the parasitic parameters of the device during the switching process show a non-linear change with the operating voltage and operating current, and it is also accompanied by problems such as increased dynamic impedance .
正因如此，直接套用Si或SiC的功率电力电子器件的动态损耗模型，是无法准确表征和计算GaN HEMT器件的动态开关损耗的。因而，需要结合HEMT器件实际的高频动态工作特性，在传统Si或SiC的功率电力电子器件的基础上，进一步改进，建立GaN HEMT器件适用的动态损耗时序模型，对GaN HEMT器件的高频应用非常有现实意义。Because of this, it is impossible to accurately characterize and calculate the dynamic switching loss of GaN HEMT devices by directly applying the dynamic loss model of Si or SiC power electronic devices. Therefore, it is necessary to combine the actual high-frequency dynamic operating characteristics of HEMT devices, and further improve on the basis of traditional Si or SiC power electronic devices, and establish a dynamic loss timing model suitable for GaN HEMT devices, and high-frequency applications for GaN HEMT devices Very realistic.
目前，针对硅基或碳化硅材料的功率电力电子器件，传统动态开关损耗的计算方案主要有两种。一种，是用示波器实时抓取器件开关时的电压电流波形直接 计算得到功率损耗；另外一种，是封闭式量热的方法，即在一个封闭式容器下测量由开关损耗带来的热量损失。显然，针对高频应用的GaN HEMT器件，这些方法存在着测量结果不准确，步骤繁琐，耗费时间，成本高昂等问题，不符合实际应用需求。At present, there are mainly two traditional calculation schemes for dynamic switching losses for silicon-based or silicon carbide power electronic devices. One is to use an oscilloscope to capture the voltage and current waveforms when the device is switched in real time to directly calculate the power loss; the other is a closed calorimetry method, that is, to measure the heat loss caused by the switching loss in a closed container . Obviously, for GaN HEMT devices for high-frequency applications, these methods have problems such as inaccurate measurement results, cumbersome steps, time-consuming, and high cost, which do not meet actual application requirements.
为了解决这个问题，针对硅基或碳化硅材料的功率电力电子器件，提出了相对准确、包含更多电力电子器件开关细节的分段式模型，并有将此类开关损耗P sw分段式时序模型直接应用到GaN HEMT上。 In order to solve this problem, for silicon-based or silicon carbide power electronic devices, a relatively accurate segmented model containing more details of the switching of power electronic devices has been proposed, and a segmented timing sequence of such switching losses P sw The model is directly applied to the GaN HEMT.
Figure PCTCN2019114217-appb-000001
Figure PCTCN2019114217-appb-000001
在这个模型中，I ds，I dson_rms和I rr分别是测试得到的器件漏极电流，器件开通状态的漏极电流均方根值和器件的反向恢复电流；V ds，V gs分别为器件漏极电压、栅极电压；f s为器件的开关工作频率；t on，t off和t rr分别为器件开启、器件关断和器件反向恢复的时间；C oss为器件输出电容；Q g为器件的栅电荷；k th和k f分别为：与器件的导通阻抗及反向电流相关的温度系数。 In this model, I ds , I dson_rms and I rr are the measured drain current of the device, the rms value of the drain current in the on state of the device and the reverse recovery current of the device; V ds , V gs are the device respectively Drain voltage, gate voltage; f s is the switching frequency of the device; t on , t off and t rr are the time of device on, device off and device reverse recovery respectively; C oss is the output capacitance of the device; Q g Is the gate charge of the device; k th and k f are respectively: temperature coefficients related to the on-resistance and reverse current of the device.
此模型多项式中，第一项表征的是器件开关过程中漏极电流I ds和漏极电压V ds的交越损耗；第二项表征的是器件在开通变换过程中，器件的输出电容C oss带来的能量损耗；第三项和第四项分别表征的是器件的导通损耗和驱动损耗；第五项表征的的是器件自身的体二极管引发的反向恢复带来的损耗。 In this model polynomial, the first term characterizes the crossover loss of the drain current I ds and the drain voltage V ds during the switching process of the device; the second term characterizes the output capacitance C oss of the device during the switching process of the device The energy loss brought about; the third and fourth items respectively characterize the conduction loss and driving loss of the device; the fifth item characterizes the loss caused by the reverse recovery caused by the body diode of the device itself.
然而，在高频动态特性方面，GaN HEMT器件相比传统Si/SiC电力电子器件有着独特的电学特性，主要体现在：GaN HEMT器件没有反向恢复的特性；其在开关回路中的寄生电容和寄生电感数值更小；器件在开关过程中寄生参数随工作电压和工作电流变化呈现非线性的改变，并且还伴随由俘获效应造成动态阻抗增加等问题。因此，对针对GaN HEMT器件来说，直接套用Si或SiC的功率电力电子器件的动态损耗模型，是无法准确表征和计算其动态开关损耗的。However, in terms of high-frequency dynamic characteristics, GaN HEMT devices have unique electrical characteristics compared to traditional Si/SiC power electronic devices, which are mainly reflected in: GaN HEMT devices have no reverse recovery characteristics; their parasitic capacitance and The parasitic inductance value is smaller; the parasitic parameters of the device in the switching process show a nonlinear change with the change of the operating voltage and operating current, and it is also accompanied by problems such as an increase in dynamic impedance caused by the trapping effect. Therefore, for GaN HEMT devices, directly applying the dynamic loss model of Si or SiC power electronic devices cannot accurately characterize and calculate their dynamic switching losses.
发明内容Summary of the invention
本发明的目的在于提供一种GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法。The purpose of the present invention is to provide a method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of a GaN HEMT device.
本发明的目的通过以下技术方案实现：The purpose of the present invention is achieved through the following technical solutions:
一种GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其步骤包括：A method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of GaN HEMT devices, the steps of which include:
(1)测量并计算在在HEMT器件开关过程中，HEMT器件处在关断状态时，高漏极电压下的HEMT器件关断损耗P off； (1) Measure and calculate the HEMT device turn-off loss P off under high drain voltage when the HEMT device is in the off state during the switching process of the HEMT device;
(2)测量并计算在HEMT器件完全开通后，HEMT器件处在饱和状态时，HEMT器件的开通损耗P con； (2) Measure and calculate the turn-on loss P con of the HEMT device when the HEMT device is in a saturated state after the HEMT device is fully turned on;
(3)测量并计算HEMT器件处于从关断到开通之间的开启变换状态时，HEMT器件的开启变换损耗P turn_on； (3) Measure and calculate the turn-on conversion loss P turn_on of the HEMT device when the HEMT device is in the turn-on transition state from off to on;
(4)测量并计算HEMT器件处于从开通到关断之间的关断变换状态时，HEMT器件的关断变换损耗P turn_off； (4) Measure and calculate the turn-off conversion loss P turn_off of the HEMT device when the HEMT device is in the turn-off transition state from on to off;
(5)计算GaN HEMT器件总的的高频动态损耗P total： (5) Calculate the total high frequency dynamic loss P total of the GaN HEMT device:
P total＝P off+P con+P turn_on+P turn_off； P total =P off +P con +P turn_on +P turn_off ;
建模过程中，采用器件高频工作时影响动态导通阻抗变化的参数来计算开通损耗P con。 In the modeling process, the parameters that affect the dynamic on-resistance change during high-frequency operation of the device are used to calculate the turn-on loss P con .
在计算HEMT器件的开启变换损耗P turn_on的过程中，通过采用栅电荷Q g的电容表征形式C gd_vf，来替代HEMT器件的输出电容C OSS。 In the process of calculating the turn-on conversion loss P turn_on of the HEMT device, the output capacitance C OSS of the HEMT device is replaced by the capacitance characterization form C gd_vf of the gate charge Q g .
作为优选的技术方案，As a preferred technical solution,
步骤(1)中，In step (1),
在HEMT器件开关过程中，在t 0-t 1、t 11-t 12和t 10-t 11时间段，HEMT器件处在关断状态。其中，在t 0-t 1、t 11-t 12时间段，漏极电压V ds处于高压状态，在高压下器件会产生漏电流，造成损耗P off_n。 During the switching process of the HEMT device, the HEMT device is in the off state during the time periods t 0 -t 1 , t 11 -t 12 and t 10 -t 11 . Among them, in the time periods t 0 -t 1 and t 11 -t 12 , the drain voltage V ds is in a high voltage state, and the device will generate leakage current under the high voltage, causing loss P off_n .
Figure PCTCN2019114217-appb-000002
Figure PCTCN2019114217-appb-000002
其中f s、T、D、I lk分别为HEMT器件开关工作频率、工作周期、占空比、关断时器件漏电流 Where f s , T, D, and I lk are the switching frequency, duty cycle, duty cycle, and leakage current of the HEMT device during turn-off, respectively
在t 10-t 11时间段，器件已经关断了，但是在输出电容C oss和杂散电感L stray之间的共振还是会带来波形的振荡。因此，漏极电压波形的振荡还会带来一部分损耗，这部分损耗和器件的漏极电压的波动峰值时相关的。假定续流二极管的反向恢复为0，得到此阶段的损耗P off_vx为： In the period of t 10 -t 11, the device has been switched off, the resonance between the output capacitance C oss L stray inductance and stray or bring oscillation waveform. Therefore, the oscillation of the drain voltage waveform will also bring some loss, which is related to the peak value of the drain voltage fluctuation of the device. Assuming that the reverse recovery of the freewheeling diode is 0, the loss P off_vx at this stage is obtained as:
Figure PCTCN2019114217-appb-000003
Figure PCTCN2019114217-appb-000003
Figure PCTCN2019114217-appb-000004
Figure PCTCN2019114217-appb-000004
其中I r为反向电流，△V为器件在此阶段的振荡电压，V ds_pk为漏极电压峰值，V ds_off为漏极电压关断时数值； Where I r is the reverse current, △V is the oscillation voltage of the device at this stage, V ds_pk is the peak value of the drain voltage, and V ds_off is the value when the drain voltage is turned off;
因此，在器件关断期间，器件的损耗模型P off为： Therefore, during the turn-off of the device, the loss model P off of the device is:
P off＝P off_n+P off_vx。 P off = P off_n + P off_vx .
步骤(2)中，In step (2),
在HEMT器件开关过程中，在t 4-t 7时间段，HEMT器件处在开通状态，此时，通过器件的电流的有效值I drain_rms为： During the switching process of the HEMT device, the HEMT device is in the on state during the period t 4- t 7. At this time, the effective value of the current through the device I drain_rms is:
Figure PCTCN2019114217-appb-000005
Figure PCTCN2019114217-appb-000005
为了有效表征HEMT器件在动态开关工作状态下动态阻抗的增加对损耗的影响，在传统Si/SiC器件开关损耗模型基础上，本发明将器件开通工作状态模型修正为：In order to effectively characterize the effect of the increase of dynamic impedance on the loss of the HEMT device in the dynamic switching state, based on the traditional Si/SiC device switching loss model, the present invention modifies the device turn-on state model to:
P con＝I drain_rms 2R dson_DCk dvk dfk ddk th_Rk cu P con ＝I drain_rms 2 R dson_DC k dv k df k dd k th_R k cu
其中，k dv、k df、k dd、k cu、k th_R分别为该阶段的电压、频率、占空比、电流和温度的线性系数，I drain_rms为通过器件的漏极电流的有效值，R dson_DC为器件的开通状态下的导通阻抗。 Among them, k dv , k df , k dd , k cu , and k th_R are the linear coefficients of voltage, frequency, duty cycle, current, and temperature at this stage, respectively, I drain_rms is the effective value of the drain current through the device, R dson_DC is the on-resistance of the device in the on-state.
步骤(3)中，在器件开启状变换过程中，器件漏极电压和漏电流的交越带来损耗，同时器件输出电容也会带来的损耗。In step (3), during the on-state transformation of the device, the crossover of the drain voltage and the leakage current of the device will bring losses, and the output capacitance of the device will also bring losses.
根据栅极电压V gs、漏极电压V ds、漏极电流I ds三个电学参数具体变化特点，将HEMT器件从关断到开通之间的开启变换状态分为三个时间段，具体为t 1-t 2、t 2-t 3和t 3-t 4三个时段。 According to the specific change characteristics of the three electrical parameters of the gate voltage V gs , the drain voltage V ds , and the drain current I ds , the turn-on transition state of the HEMT device from off to on is divided into three time periods, specifically t Three periods of 1- t 2 , t 2- t 3 and t 3- t 4 .
第一时间段为HEMT器件从关断到初步开通，记为t 1-t 2阶段，漏极电流I ds处于线性上升的状态，由t 1时间点的0升至t 2时间点的Ist a，同时漏极电压V ds由于寄生电感在di/dt影响下，下降到t 2的电压V r水平，该时间段的器件开启变换损耗P turn_on_cr计算方式为： The first time period is when the HEMT device is turned off to initially turned on, which is recorded as the t 1 -t 2 stage, the drain current I ds is in a linearly rising state, rising from 0 at time t 1 to Ist a at time t 2 At the same time, the drain voltage V ds drops to the voltage V r level of t 2 under the influence of di/dt due to parasitic inductance. The device turn-on conversion loss P turn_on_cr during this time period is calculated as:
Figure PCTCN2019114217-appb-000006
Figure PCTCN2019114217-appb-000006
Figure PCTCN2019114217-appb-000007
Figure PCTCN2019114217-appb-000007
Figure PCTCN2019114217-appb-000008
Figure PCTCN2019114217-appb-000008
Figure PCTCN2019114217-appb-000009
Figure PCTCN2019114217-appb-000009
式中，R turn_on_cr为开启变换状态中器件通阻，△V ds为漏极电压在该状态中的变化量，为△I channel为沟道电流在该状态中的变化量，k dv、k df、k dd、k cu、k th_R分别为该阶段的电压、频率、占空比、电流和温度的线性系数，L eff_Gate和W eff_Gate分别为有效沟道长度和宽度，μ s为氮化镓电子迁移率，C gs为器件栅源电容，I sta为起始电流，V drive_H为器件开通时栅极驱动电压，L s是器件源极端和地之间的串联电感，V th为器件栅极阈值电压，g m为器件的跨导，V mr为器件开通时的密勒平台电压，f s为器件工作频率，K lag是器件栅极开通延迟的拟合系数，通过测量器件在不同关断电压、工作频率和占空比下的开通时延得到的，t 1-t 2代表t 1时间点到t 2时间点的长度，R g_on为栅极驱动的上拉电阻。 In the formula, R turn_on_cr is the on-resistance of the device in the on-transition state, △V ds is the change in drain voltage in this state, △I channel is the change in channel current in this state, k dv , k df , K dd , k cu , and k th_R are the linear coefficients of voltage, frequency, duty cycle, current and temperature, respectively, L eff_Gate and W eff_Gate are the effective channel length and width respectively, μ s is the gallium nitride electron Mobility, C gs is the device gate-source capacitance, I sta is the initial current, V drive_H is the gate drive voltage when the device is turned on, L s is the series inductance between the device source terminal and ground, and V th is the device gate threshold Voltage, g m is the transconductance of the device, V mr is the Miller plateau voltage when the device is turned on, f s is the device operating frequency, K lag is the fitting coefficient of the device gate turn-on delay, by measuring the device at different turn-off voltages , The turn-on delay under the operating frequency and duty cycle, t 1 -t 2 represents the length from time t 1 to time t 2 , and R g_on is the pull-up resistor of the gate drive.
第二时间段为器件进一步开启阶段，记为t 2-t 3阶段，通过电感负载流经器件的电流进一步增加，随着器件输出电容C oss的放电，漏极电压下降幅度变化很大，由高压状态下降到器件栅极阈值开启电压，同时电路中的杂散电感L stray和输出电容C oss共振，漏极电流I ds产生振荡。漏极电压V ds下降幅度变化大于第一时间段。该时间段内采用栅漏电荷Q gd替代电容C oss得到新的电容表征形式C gd_vf的方法来计算损耗。 The second time period is the further turn-on period of the device, which is marked as t 2 -t 3 period. The current flowing through the device through the inductive load further increases. With the discharge of the device output capacitance C oss , the drain voltage drops greatly. The high voltage state drops to the gate threshold turn-on voltage of the device, and at the same time the stray inductance L stray and the output capacitor C oss in the circuit resonate, and the drain current I ds oscillates. The drain voltage V ds decreases more than the first time period. In this time period, the method of replacing the capacitance C oss with the gate-drain charge Q gd to obtain a new capacitance characterization form C gd_vf is used to calculate the loss.
该时间段内器件电容C gd_vf计算方式、时间段t 2-t 3长度、该时间段内的平均沟道电流I vf和损耗P turn_on_vf的计算方法分别为： The calculation methods of the device capacitance C gd_vf in this time period, the length of the time period t 2 -t 3 , the average channel current I vf and the loss P turn_on_vf in this time period are respectively:
Figure PCTCN2019114217-appb-000010
Figure PCTCN2019114217-appb-000010
Figure PCTCN2019114217-appb-000011
Figure PCTCN2019114217-appb-000011
Figure PCTCN2019114217-appb-000012
Figure PCTCN2019114217-appb-000012
Figure PCTCN2019114217-appb-000013
Figure PCTCN2019114217-appb-000013
其中，△V为该阶段中栅极电压的变化量，V r为此阶段栅极电压参考值，L stray为电路中的杂散电感，C stray为电路中的杂散电容，
Figure PCTCN2019114217-appb-000014
为平均沟道电流，Q gd为栅漏电荷，R dson为器件的导通阻抗，R g_on为栅极驱动的上拉电阻。 Wherein, △ V for a gate voltage change amount of phase, V r gate voltage of the reference value for this stage, L stray stray inductance of the circuit, C stray stray capacitance of the circuit,
Figure PCTCN2019114217-appb-000014
Is the average channel current, Q gd of the gate-drain charge, R dson of the device on-resistance, R g_on gate driver pull-up resistor.
第三时间段记为t 3-t 4阶段，漏极电压V ds降低到阈值电压V th以下，器件进入线性区，栅极电压维持在米勒平台电压V mr状态，此时间段的持续时间、该阶段内器件的开通电压V on_r和损耗P turn_on_mr分别为： The third time period is marked as t 3 -t 4 , the drain voltage V ds drops below the threshold voltage V th , the device enters the linear region, and the gate voltage remains at the Miller plateau voltage V mr . The duration of this time period , The turn-on voltage V on_r and loss P turn_on_mr of the device in this stage are:
Figure PCTCN2019114217-appb-000015
Figure PCTCN2019114217-appb-000015
V on_r＝I staR dsonk dvk dfk ddk th_R V on_r = I sta R dson k dv k df k dd k th_R
Figure PCTCN2019114217-appb-000016
Figure PCTCN2019114217-appb-000016
基于阶段三中各个时间段的开通过程损耗计算，得到测量下总的开通状态期间的损耗为各个部分之和：Based on the calculation of the turn-on loss during each time period in Phase 3, the total turn-on loss under the measurement is the sum of all parts:
P turn_on(measured)＝P turn_on_cr+P turn_on_vf+P turn_on_mr。 P turn_on (measured) = P turn_on_cr + P turn_on_vf + P turn_on_mr .
优选的，步骤(3)中在器件开通变换过程中，实际对器件开关损耗产生密切影响的是器件的沟道电流，实际的沟道电流I channel是漏极电流I drain和输出电容C oss放电电流(即包括器件漏源电容电流I Cds和栅漏电容电流I Cgd)之和： Preferably, in step (3), during the turn-on transition of the device, it is the channel current of the device that has a close influence on the switching loss of the device, and the actual channel current I channel is the drain current I drain and the output capacitor C oss discharge The sum of current (that is, including the device drain-source capacitance current I Cds and the gate drain capacitance current I Cgd ):
I channel＝I ds+I Cds+I Cgd≈I ds+I Cds I channel =I ds +I Cds +I Cgd ≈I ds +I Cds
考虑到输出电容C oss放电电流带来的损耗P turn_on_dis： Considering the loss P turn_on_dis caused by the discharge current of the output capacitor C oss :
Figure PCTCN2019114217-appb-000017
Figure PCTCN2019114217-appb-000017
将HEMT器件的开启变换损耗P turn_on修正为： Correct the turn-on conversion loss P turn_on of the HEMT device to
Figure PCTCN2019114217-appb-000018
Figure PCTCN2019114217-appb-000018
步骤(4)中，In step (4),
优选的，在器件关断变换过程中，器件漏极电压和漏电流的交越带来损耗。Preferably, during the turn-off transition of the device, the crossover of the drain voltage and the leakage current of the device causes loss.
根据栅极电压V gs、漏极电压V ds、漏极电流I ds三个电学参数具体变化特点，将HEMT器件从开通到关断之间的开启变换状态分为三个时间段，具体为t 7-t 8、t 8-t 9和t 9-t 10三个时段。 According to the specific change characteristics of the three electrical parameters of the gate voltage V gs , the drain voltage V ds , and the drain current I ds , the turn-on transition state of the HEMT device from on to off is divided into three time periods, specifically t There are three periods of 7- t 8 , t 8- t 9 and t 9- t 10 .
第一时间段器件开始由开通转换为关断状态，记为t 7-t 8阶段，漏极电压V ds开始上升同时漏电流I ds基本保持不变，器件工作在线性区，设定峰值电流I pk保持不变，V mr＝V mf，在该时间段范围，时间段长度t 7-t 8、器件的开通电压V on_f和时间内的损耗P turn_off_mf分别为： In the first period of time, the device starts to switch from on to off, which is marked as t 7 -t 8. The drain voltage V ds starts to rise while the leakage current I ds basically remains unchanged. The device works in the linear region and sets the peak current I pk remains unchanged, V mr = V mf , within this time period, the time period length t 7 -t 8 , the turn-on voltage V on_f of the device and the time loss P turn_off_mf are respectively:
Figure PCTCN2019114217-appb-000019
Figure PCTCN2019114217-appb-000019
V on_f＝I pkR dsonk dvk dfk ddk th_R V on_f = I pk R dson k dv k df k dd k th_R
Figure PCTCN2019114217-appb-000020
Figure PCTCN2019114217-appb-000020
其中，V mf为器件关断时的密勒平台电压，V drive_L为器件关断时栅极驱动电压，R g_off为栅极驱动的下拉电阻，I pk为峰值电流。 Among them, V mf is the Miller plateau voltage when the device is turned off, V drive_L is the gate drive voltage when the device is turned off, R g_off is the pull-down resistance of the gate drive, and I pk is the peak current.
第二时间段记为t 8-t 9，该时间段漏极电压大幅上升到关断电压V ds_off，上升幅度大于步骤(4)的第一时间段，漏电流开始下降到I r，此段电流的小幅下降是给其他器件充电造成的；整体该时段电学参数表现与t 2-t 3时间段类似，此时间段中与电流充电相关的输出电容C oss充电时间不可再忽略。因此，在该时间段范围，时间段长度t 8-t 9、I r和损耗P turn_off_vr分别为： The second time period is denoted as t 8 -t 9. During this time period, the drain voltage rises significantly to the turn-off voltage V ds_off , and the rising amplitude is greater than the first time period of step (4), and the leakage current begins to drop to I r . The small drop in current is caused by charging other devices; the overall electrical parameter performance during this period is similar to the time period t 2 -t 3 , and the charging time of the output capacitor C oss related to current charging in this period can no longer be ignored. Therefore, in this time period range, the time period length t 8 -t 9 , Ir and loss P turn_off_vr are respectively:
Figure PCTCN2019114217-appb-000021
Figure PCTCN2019114217-appb-000021
Figure PCTCN2019114217-appb-000022
Figure PCTCN2019114217-appb-000022
Figure PCTCN2019114217-appb-000023
Figure PCTCN2019114217-appb-000023
其中，dV ds为此时间段内漏极电压V ds的变化量，dt为此时间段的持续时长。 Among them, dV ds is the variation of the drain voltage V ds in the time period, and dt is the duration of the time period.
第三时间段记为t 9-t 10，漏电流大幅下降，下降幅度大于第二时间段，同时漏电压处于震荡且相对稳定的高压水平，该时间段范围内，时间段长度t 9-t 10、损耗P turn_off_cf分别为： The third time period is denoted as t 9 -t 10 , the leakage current drops sharply, and the decrease is greater than the second time period, and the leakage voltage is at an oscillating and relatively stable high voltage level. Within this time period, the time period length is t 9 -t 10. Loss P turn_off_cf are:
Figure PCTCN2019114217-appb-000024
Figure PCTCN2019114217-appb-000024
Figure PCTCN2019114217-appb-000025
Figure PCTCN2019114217-appb-000025
基于阶段三中各个时间段的关断变换过程损耗过程，Based on the loss process of the turn-off conversion process in each time period in phase three,
P turn_off(measured)＝P turn_off_mf+P turn_off_vr+P turn_off_cf P turn_off(measured) =P turn_off_mf +P turn_off_vr +P turn_off_cf
利用模型计算时，在实际器件关断变换情况下I pk和I r是测量得到的电流数值，并非HEMT器件内部实际沟道电流I channel，而实际的沟道电流I channel为测量得到的漏电流减去给输出电容C oss充电部分的电流(即包括器件漏源电容电流I Cds和栅漏电容电流I Cgd)： When using the model to calculate, I pk and I r are the measured current values when the actual device is switched off, not the actual channel current I channel inside the HEMT device, and the actual channel current I channel is the measured leakage current Subtract the current that charges the output capacitor C oss (that is, including the device drain-source capacitance current I Cds and the gate drain capacitance current I Cgd ):
I channel＝I ds-I Cds-I Cgd≈I ds-I Cds I channel = I ds -I Cds -I Cgd ≈I ds -I Cds
优选的，步骤(4)中考虑到给输出电容C oss充电多计算的损耗，P turn_off_char： Preferably, in step (4), considering the calculated loss of charging the output capacitor C oss , P turn_off_char :
I channel＝I ds-I Cds-I Cgd≈I ds-I Cds I channel = I ds -I Cds -I Cgd ≈I ds -I Cds
将HEMT器件的关断变换损耗P turn_off修正为： Modify the turn-off conversion loss P turn_off of the HEMT device to:
Figure PCTCN2019114217-appb-000026
Figure PCTCN2019114217-appb-000026
最终，将器件开通，关断，开启变换和关断变换共计四个工作状态下的损耗相加，得到GaN HEMT器件总的的高频动态损耗P total： Finally, add the losses in the four working states of device turn-on, turn-off, turn-on conversion, and turn-off conversion to obtain the total high-frequency dynamic loss P total of the GaN HEMT device:
P total＝P off+P con+P turn_on+P turn_off。 P total =P off +P con +P turn_on +P turn_off .
在GaN HEMT器件中，生长得到的晶体质量不可能是完美，材料仍会存在缺陷，当器件暴露在高电压场的工作状态下，器件表面态和势垒层等位置的缺陷会俘获二位电子气的电子，导致器件的导通阻抗增加，这就是GaN HEMT器件的俘获效应。俘获效应下被缺陷捕获的电子的释放时间在ns级别，所以当器件工作在更高的工作频率下(数MHz)，短时间内被缺陷俘获的电子来不及被释放回二维电子气中,正因如此，当HEMT器件工作在高频状态下，动态阻抗的增加是计算器件开关损耗的不可忽略的因素。本发明通过搭建动态阻抗提取电路，可以获取动态导通阻抗随工作电压、工作频率、脉冲信号占空比、工作电流和器件温度变化的线性系数的提取。In GaN HEMT devices, the quality of the grown crystals cannot be perfect, and the material will still have defects. When the device is exposed to a high voltage field, the defects in the surface state of the device and the barrier layer will trap two electrons. Gas electrons cause the on-resistance of the device to increase, which is the trapping effect of GaN HEMT devices. The release time of electrons trapped by defects under the trapping effect is in the ns level, so when the device works at a higher operating frequency (several MHz), the electrons trapped by the defect in a short time will not be released back into the two-dimensional electron gas. Because of this, when the HEMT device is operating at a high frequency, the increase in dynamic impedance is a non-negligible factor in calculating the switching loss of the device. By constructing a dynamic impedance extraction circuit, the present invention can obtain the extraction of the linear coefficient of dynamic on-resistance that varies with operating voltage, operating frequency, pulse signal duty cycle, operating current, and device temperature.
本发明针对GaN HEMT实际的高频动态工作特性，改进了传统基于Si/SiC电力电子器件开关损耗的分段式模型，根据器件在开关过程中不同时段的电学参数状态，具体划分为开通，关断，开启变换和关断变换共计四个工作状态，具体细分为12个时序，建立了GaN HEMT器件适用的动态损耗非线性分段时序模型。Aiming at the actual high-frequency dynamic operating characteristics of GaN HEMT, the present invention improves the traditional segmented model based on the switching loss of Si/SiC power electronic devices. According to the electrical parameter state of the device at different periods during the switching process, it is specifically divided into on and off There are a total of four working states of off, on conversion and off conversion, which are specifically subdivided into 12 time sequences. A dynamic loss nonlinear segmented time sequence model for GaN HEMT devices is established.
具体的，在本发明中，特别考虑了HEMT器件在高频工作状态下存在的独有的动态阻抗增加的问题，为此，通过搭建动态阻抗提取电路，以简单快捷的方式实现了动态导通阻抗随工作电压、工作频率、脉冲信号占空比、工作电流和器件温度变化的线性系数的准确提取，并把这些系数用到HEMT器件开关损耗的建模。Specifically, in the present invention, special consideration is given to the unique dynamic impedance increase of HEMT devices under high-frequency working conditions. For this reason, by building a dynamic impedance extraction circuit, dynamic conduction is realized in a simple and quick manner The linear coefficients of impedance varying with operating voltage, operating frequency, pulse signal duty cycle, operating current and device temperature are accurately extracted, and these coefficients are used to model the switching loss of HEMT devices.
在HEMT器件开关工作时，随着输出电容C oss的充电放电，器件漏极电压上升下降幅度会变化很大。而HEMT器件的输出电容C oss存在的特性是随漏极电压变化而改变，因而，在漏极电压变化幅度巨大的这个时间段内，利用C oss计算开关损耗不再适用，为此，在模型建立过程中，本发明采用栅电荷Q g替代电容C oss的方法，避免了电容容值随电压变化的计算困难和损耗结果不精确。 When the HEMT device is switched on and off, as the output capacitor C oss is charged and discharged, the rise and fall of the drain voltage of the device will vary greatly. The output capacitance C oss of the HEMT device changes with the drain voltage. Therefore, in this period of time when the drain voltage changes greatly, using C oss to calculate the switching loss is no longer applicable. For this reason, in the model During the establishment process, the present invention adopts the method of replacing the capacitor C oss with the gate charge Q g , which avoids the calculation difficulty of the capacitance value changing with the voltage and the inaccurate loss result.
附图说明Description of the drawings
图1为GaN HEMT器件高频动态损耗的非线性分段时序模型的时序图。Figure 1 is a timing diagram of a non-linear segmented timing model of GaN HEMT device high-frequency dynamic loss.
图2为GaN HEMT器件动态阻抗提取电路图。Figure 2 is a circuit diagram of GaN HEMT device dynamic impedance extraction.
图3为GaN HEMT器件的漏极电流与实际沟道电流的差异比较及表征电路图。Figure 3 is a comparison and characterization circuit diagram of the difference between the drain current and the actual channel current of the GaN HEMT device.
具体实施方式detailed description
实施例1Example 1
本GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，根据器件起始电流I sta的数值情况定义HEMT开关管的工作模式。具体为： The method for establishing the non-linear segmented timing model of the high frequency dynamic loss of the GaN HEMT device defines the working mode of the HEMT switch tube according to the value of the initial current I sta of the device. Specifically:
I sta＝0定义为DCM(discontinuous current mode)即电流断续模式。 I sta =0 is defined as DCM (discontinuous current mode), that is, current discontinuous mode.
I sta>0定义为CCM(continuous current mode)即电流连续模式。 I sta > 0 is defined as CCM (continuous current mode), that is, continuous current mode.
根据GaN HEMT器件在开关过程中，栅极电压V gs、漏极电压V ds、漏极电流I ds三个电学参数，在关断、开通、开启变换、关断变换四个主要工作阶段下的具体变化，细分为t 1到t 12共计12个工作时段，具体模型的时序图如图1所示： According to the three electrical parameters of the gate voltage V gs , drain voltage V ds , and drain current I ds during the switching process of the GaN HEMT device, the operation is performed under the four main working stages of turn-off, turn-on, turn-on conversion, and turn-off conversion. The specific changes are subdivided into 12 working periods from t 1 to t 12. The timing diagram of the specific model is shown in Figure 1:
其步骤包括：The steps include:
(1)在HEMT器件开关过程中，在t 0-t 1、t 11-t 12和t 10-t 11时间段，HEMT器件处在关断状态。其中，在t 0-t 1、t 11-t 12时间段，漏极电压V ds处于高压状态，在高压下器件会产生漏电流，造成损耗P off_n。 (1) During the switching process of the HEMT device, the HEMT device is in the off state during the time periods t 0- t 1 , t 11- t 12 and t 10- t 11 . Among them, in the time periods t 0 -t 1 and t 11 -t 12 , the drain voltage V ds is in a high voltage state, and the device will generate leakage current under the high voltage, causing loss P off_n .
Figure PCTCN2019114217-appb-000027
Figure PCTCN2019114217-appb-000027
其中f s、T、D、I lk分别为HEMT器件开关工作频率、工作周期、占空比、关断时器件漏电流. Where f s , T, D, and I lk are the switching operating frequency, duty cycle, duty cycle, and device leakage current of the HEMT device during turn-off, respectively.
在t 10-t 11时间段，器件已经关断了，但是在输出电容C oss和杂散电感L stray之间的共振还是会带来波形的振荡，此时，漏极电压波形的振荡还会带来一部分损耗，假定续流二极管的反向恢复为0，得到此阶段的损耗P off_vx为： In the period of t 10 -t 11, the device has been switched off, the resonance between the output capacitance C oss L stray inductance and stray or bring oscillation waveform, in which case, the drain voltage oscillation waveform will Bring some loss, assuming that the reverse recovery of the freewheeling diode is 0, the loss P off_vx at this stage is obtained as:
Figure PCTCN2019114217-appb-000028
Figure PCTCN2019114217-appb-000028
Figure PCTCN2019114217-appb-000029
Figure PCTCN2019114217-appb-000029
其中I r为反向电流，△V为器件在此阶段的振荡电压，V ds_pk为漏极电压峰值，V ds_off为漏极电压关断时数值； Where I r is the reverse current, △V is the oscillation voltage of the device at this stage, V ds_pk is the peak value of the drain voltage, and V ds_off is the value when the drain voltage is turned off;
因此，在器件关断期间，器件的损耗模型P off为： Therefore, during the turn-off of the device, the loss model P off of the device is:
P off＝P off_n+P off_vx。 P off = P off_n + P off_vx .
(2)HEMT器件开关过程中在,t 4-t 7时间段，HEMT器件处在开通状态，此时，通过器件的电流的有效值I drain_rms为： (2) During the switching process of the HEMT device, the HEMT device is in the on state during the period t 4 -t 7. At this time, the effective value of the current through the device I drain_rms is:
Figure PCTCN2019114217-appb-000030
Figure PCTCN2019114217-appb-000030
器件的开通损耗P con为： The turn-on loss P con of the device is:
P con＝I drain_rms 2R dson_DCk dvk dfk ddk th_Rk cu P con ＝I drain_rms 2 R dson_DC k dv k df k dd k th_R k cu
其中，k dv、k df、k dd、k cu、k th_R分别为该阶段的电压、频率、占空比、电流和温度的线性系数，I drain_rms为通过器件的电流的有效值，R dson_DC为器件的开通状态下的导通阻抗。 Among them, k dv , k df , k dd , k cu , and k th_R are the linear coefficients of voltage, frequency, duty cycle, current and temperature at this stage respectively, I drain_rms is the effective value of the current passing through the device, and Rdson_DC is The on resistance of the device in the on state.
(3)在t 1-t 4时间段，器件处于从关断到开通之间的开启变换状态。在器件开启状变换过程中，器件漏极电压和漏电流的交越带来损耗，同时器件输出电容也会带来的损耗。 (3) During the period of t 1 -t 4 , the device is in the on-transition state from off to on. During the on-state transformation of the device, the crossover of the drain voltage and the leakage current of the device will bring losses, and the output capacitance of the device will also bring losses.
根据栅极电压V gs、漏极电压V ds、漏极电流I ds三个电学参数具体变化特点，将HEMT器件从关断到开通之间的开启变换状态分为三个时间段，具体为t 1-t 2、t 2-t 3和t 3-t 4三个时段。 According to the specific change characteristics of the three electrical parameters of the gate voltage V gs , the drain voltage V ds , and the drain current I ds , the turn-on transition state of the HEMT device from off to on is divided into three time periods, specifically t Three periods of 1- t 2 , t 2- t 3 and t 3- t 4 .
3.1：3.1:
t 1-t 2时间段，在DCM模式下，由于I sta＝0，不存在此段损耗。而在CCM模式下：漏电流在t 1时在I ds从0上升到t 2时刻的I sta，同时漏极电压V ds由于寄生电感在di/dt影响下，下降了一个较小的幅度，下降到电压V r水平.。此外，由于器件暴露在高电压下，俘获效应造成的器件动态阻抗的增加也纳入模型考虑的范围。因此，在该时间段范围，器件动态阻抗的计算方式、时间段长度、t 2时刻损耗P turn_on_cr的计算方法为： In the period t 1 -t 2 , in the DCM mode, since I sta =0, there is no loss in this period. In CCM mode: the leakage current at t 1 when I ds rises from 0 to I sta at t 2 , and the drain voltage V ds drops by a small magnitude due to the parasitic inductance under the influence of di/dt. Drop to the voltage V r level. In addition, because the device is exposed to high voltage, the increase in the dynamic impedance of the device caused by the trapping effect is also taken into consideration in the model. Therefore, in this time period, the calculation method of the dynamic impedance of the device, the length of the time period, and the calculation method of the loss P turn_on_cr at time t 2 are:
Figure PCTCN2019114217-appb-000031
Figure PCTCN2019114217-appb-000031
Figure PCTCN2019114217-appb-000032
Figure PCTCN2019114217-appb-000032
Figure PCTCN2019114217-appb-000033
Figure PCTCN2019114217-appb-000033
Figure PCTCN2019114217-appb-000034
Figure PCTCN2019114217-appb-000034
其中，R turn_on_cr为开启变换状态中器件通阻，△V ds为漏极电压在该状态中的变化量，为△I channel为沟道电流在该状态中的变化量，k dv、k df、k dd、k cu、k th_R分别为该阶段的电压、频率、占空比、电流和温度的线性系数，L eff_Gate和W eff_Gate分别为有效沟道长度和宽度，μ s为氮化镓电子迁移率，C gs为器件栅源电容，I sta为起始电流，V drive_H为器件开通时栅极驱动电压，L s是器件源极端和地之间的串联电感，V th为器件栅极阈值电压，g m为器件的跨导，V mr为器件开通时的密勒平台电压，f s为器件工作频率，t 1-t 2代表t 1时间点到t 2时间点的长度，R g_on为栅极驱动的上拉电阻。 Among them, R turn_on_cr is the on-resistance of the device in the on-transition state, △V ds is the change in drain voltage in this state, △I channel is the change in channel current in this state, k dv , k df , k dd , k cu , k th_R are the linear coefficients of voltage, frequency, duty cycle, current and temperature at this stage, L eff_Gate and W eff_Gate are the effective channel length and width, respectively, μ s is the electron migration of gallium nitride C gs is the device gate-source capacitance, I sta is the initial current, V drive_H is the gate drive voltage when the device is turned on, L s is the series inductance between the device source terminal and ground, and V th is the device gate threshold voltage , G m is the transconductance of the device, V mr is the Miller plateau voltage when the device is turned on, f s is the operating frequency of the device, t 1 -t 2 represents the length from time t 1 to time t 2 , and R g_on is the gate Pull-up resistor for pole drive.
其中，K lag是器件栅极开通延迟的拟合系数，通过比较器件在不同关断电压、工作频率和占空比下的：即没有采用K lag系数校正计算得到的数值和真实测试得到的栅极开通延迟的数据，将对应的两组数据采用最小二乘法进行线性拟合，最终得到栅极开通延迟的拟合系数K lag。 Among them, K lag is the fitting coefficient of the gate turn-on delay of the device. By comparing the device under different turn-off voltages, operating frequencies and duty cycles: that is, the calculated value and the gate obtained from the real test are not corrected by the K lag coefficient. For the data of extremely turn-on delay, the corresponding two sets of data are linearly fitted by the least square method, and finally the fitting coefficient K lag of the gate turn-on delay is obtained.
3.2：3.2:
t 2-t 3时间段，器件进一步开启，通过电感负载流经器件的电流进一步增加，随着输出电容C oss的放电，漏电极压下降幅度变化很大，由高压状态下降到器件栅极阈值开启电压，同时电路中的杂散电感L stray和输出电容C oss共振，导致漏极电流I ds产生振荡。漏极电压V ds下降幅度变化大于第一时间段。 During t 2 -t 3 , the device is further turned on, and the current flowing through the device through the inductive load further increases. With the discharge of the output capacitor C oss , the drain electrode voltage drops greatly, from the high voltage state to the gate threshold of the device. When the voltage is turned on, the stray inductance L stray and the output capacitor C oss in the circuit resonate, causing the drain current I ds to oscillate. The drain voltage V ds decreases more than the first time period.
设定在此时间段内栅极电流和栅极电压不变，续流二极管的反向恢复为0。Set the gate current and gate voltage unchanged during this time period, and the reverse recovery of the freewheeling diode is 0.
并且，在此时间段内器件漏电流已经上升到比较大的程度，所以对C oss的充电时间可以忽略不计。 In addition, the leakage current of the device has risen to a relatively large extent during this time period, so the charging time for C oss can be ignored.
考虑到HEMT器件的输出电容C oss存在的特性是随漏极电压变化而改变，在漏极电压下降幅度巨大的这个时间段内，利用C oss计算开关损耗不再适用，为此，本发明采用栅漏电荷Q gd替代电容C oss得到新的电容表征形式C gd_vf的方法，避免了电容容值随电压变化的计算困难和不精确。 Considering that the characteristic of the output capacitance C oss of the HEMT device changes with the change of the drain voltage, it is no longer applicable to calculate the switching loss by using C oss during the period when the drain voltage drops greatly. For this reason, the present invention adopts The method in which the gate-drain charge Q gd replaces the capacitor C oss to obtain a new capacitor characterization form C gd_vf avoids the difficulty and inaccuracy of the calculation of the capacitance value changing with the voltage.
因此，在该时间段范围，器件电容C gd_vf计算方式、时间段t 2-t 3长度、该时 间段内的平均沟道电流I vf和损耗P turn_on_vf的计算方法分别为： Therefore, in this time period, the calculation methods of the device capacitance C gd_vf , the length of the time period t 2 -t 3 , the average channel current I vf and the loss P turn_on_vf in the time period are respectively:
Figure PCTCN2019114217-appb-000035
Figure PCTCN2019114217-appb-000035
Figure PCTCN2019114217-appb-000036
Figure PCTCN2019114217-appb-000036
Figure PCTCN2019114217-appb-000037
Figure PCTCN2019114217-appb-000037
Figure PCTCN2019114217-appb-000038
Figure PCTCN2019114217-appb-000038
其中，△V为该阶段中栅极电压的变化量，V r为此阶段栅极电压参考值，L stray为电路中的杂散电感，C stray为电路中的杂散电容，
Figure PCTCN2019114217-appb-000039
为平均沟道电流，Q gd为栅漏电荷，R dson为器件的导通阻抗，R g_on为栅极驱动的上拉电阻。 Wherein, △ V for a gate voltage change amount of phase, V r gate voltage of the reference value for this stage, L stray stray inductance of the circuit, C stray stray capacitance of the circuit,
Figure PCTCN2019114217-appb-000039
Is the average channel current, Q gd of the gate-drain charge, R dson of the device on-resistance, R g_on gate driver pull-up resistor.
3.3：t 3-t 4阶段，漏极电压V ds降低到阈值电压V th以下，器件进入线性区，栅极电压维持在米勒平台电压V mr状态，此时间段的持续时间、该阶段内器件的开通电压V on_r和损耗P turn_on_mr分别为： 3.3: During t 3 -t 4 stage, the drain voltage V ds drops below the threshold voltage V th , the device enters the linear region, and the gate voltage remains at the Miller plateau voltage V mr . The duration of this period of time, within this stage The turn-on voltage V on_r and loss P turn_on_mr of the device are respectively:
Figure PCTCN2019114217-appb-000040
Figure PCTCN2019114217-appb-000040
V on_r＝I staR dsonk dvk dfk ddk th_R V on_r = I sta R dson k dv k df k dd k th_R
Figure PCTCN2019114217-appb-000041
Figure PCTCN2019114217-appb-000041
3.4：基于阶段三中各个时间段的开通过程损耗计算，得到测量下总的开通状态期间的损耗为各个部分之和P turn_on(measured)： 3.4: Based on the calculation of the turn-on loss during each time period in phase three, the total turn-on loss during the measurement is the sum of the various parts P turn_on(measured) :
P turn_on(measured)＝P turn_on_cr+P turn_on_vf+P turn_on_mr P turn_on(measured) =P turn_on_cr +P turn_on_vf +P turn_on_mr
在器件开通变换过程中，实际对器件开关损耗产生密切影响的是器件的沟道 电流，实际的沟道电流I channel是漏极电流I ds和输出电容C oss放电电流(即包括器件漏源电容电流I Cds和栅漏电容电流I Cgd)之和： In the process of device turn-on transformation, it is the channel current of the device that has a close influence on the switching loss of the device. The actual channel current I channel is the drain current I ds and the output capacitor C oss discharge current (that is, the device drain-source capacitance The sum of the current I Cds and the gate leakage capacitance current I Cgd ):
I channel＝I ds+I Cds+I Cgd≈I ds+I Cds I channel =I ds +I Cds +I Cgd ≈I ds +I Cds
考虑到C oss放电电流带来的损耗： Considering the loss caused by the discharge current of C oss :
Figure PCTCN2019114217-appb-000042
Figure PCTCN2019114217-appb-000042
其中，V ds_off为器件关断时的漏极电压。 Among them, V ds_off is the drain voltage when the device is turned off.
最终将HEMT器件的实际开启变换损耗P turn_on修正为： Finally, the actual turn-on conversion loss P turn_on of the HEMT device is corrected to:
Figure PCTCN2019114217-appb-000043
Figure PCTCN2019114217-appb-000043
(4)在t 7-t 10时间段，器件处于从开通到关断之间的关断变换状态。根据栅极电压V gs、漏极电压V ds、漏极电流I ds三个电学参数具体变化特点，具体为t 7-t 8、t 8-t 9和t 9-t 10三个时段详细建模。 (4) During the period t 7- t 10 , the device is in the off transition state from on to off. According to the specific change characteristics of the three electrical parameters of the gate voltage V gs , the drain voltage V ds , and the drain current I ds , which are specifically constructed in the three time periods t 7- t 8 , t 8- t 9 and t 9- t 10 mold.
4.1：4.1:
t 7-t 8时间段，器件开始由开通转换为关断状态，漏极电压开始上升同时漏电流I ds基本保持不变。与t 3-t 4时间段类似，器件工作在线性区。设定峰值电流I pk保持不变，V mr＝V mf，在该时间段范围，时间段长度、电压V on_f和损耗P turn_off_mf分别为： During the period t 7 -t 8 , the device starts to switch from on to off, the drain voltage starts to rise and the leakage current I ds basically remains unchanged. Similar to the t 3 -t 4 time period, the device works in the linear region. Set the peak current I pk to remain unchanged, V mr =V mf , within the time period range, the time period length, voltage V on_f and loss P turn_off_mf are respectively:
Figure PCTCN2019114217-appb-000044
Figure PCTCN2019114217-appb-000044
V on_f＝I pkR dsonk dvk dfk ddk th_R V on_f = I pk R dson k dv k df k dd k th_R
Figure PCTCN2019114217-appb-000045
Figure PCTCN2019114217-appb-000045
其中，V mf为器件关断时的密勒平台电压，V drive_L为器件关断时栅极驱动电压，R g_off为栅极驱动的下拉电阻，I pk为峰值电流。 Among them, V mf is the Miller plateau voltage when the device is turned off, V drive_L is the gate drive voltage when the device is turned off, R g_off is the pull-down resistance of the gate drive, and I pk is the peak current.
4.2：4.2:
t 8-t 9时间段，漏极电压大幅上升到关断电压V ds_off，上升幅度大于步骤(4)的第一时间段，漏电流开始下降到I r，此段电流的小幅下降是给其他器件充电造成的；整体该时段电学参数表现与t 2-t 3时间段类似，此时间段中与电流充电相关的输出电容C oss充电时间不可再忽略。因此，在该时间段范围，时间段长度、I r和损耗P turn_off_vr分别为： During the period t 8 -t 9 , the drain voltage rises sharply to the turn-off voltage V ds_off , and the rise is greater than the first period of step (4), the leakage current begins to drop to I r , and the small decrease in current during this period is for other It is caused by the charging of the device; the overall performance of the electrical parameters during this period is similar to the time period t 2 -t 3 , and the charging time of the output capacitor C oss related to current charging in this period can no longer be ignored. Therefore, in this time period, the time period length, Ir and loss P turn_off_vr are respectively:
Figure PCTCN2019114217-appb-000046
Figure PCTCN2019114217-appb-000046
Figure PCTCN2019114217-appb-000047
Figure PCTCN2019114217-appb-000047
Figure PCTCN2019114217-appb-000048
Figure PCTCN2019114217-appb-000048
其中，dV ds为此时间段内漏极电压V ds的变化量，dt为此时间段的持续时长。 Among them, dV ds is the variation of the drain voltage V ds in the time period, and dt is the duration of the time period.
4.3：4.3:
t 9-t 10时间段，漏电流大幅下降，从I r继续下降到很低的水平，同时漏电压已经上升到相对稳定的高压水平。因此，在该时间段范围，时间段长度、损耗P turn_off_cf分别为： During the period from t 9 to t 10 , the leakage current dropped sharply, and continued to drop from Ir to a very low level, while the leakage voltage had risen to a relatively stable high voltage level. Therefore, in this time period range, the time period length and loss P turn_off_cf are respectively:
Figure PCTCN2019114217-appb-000049
Figure PCTCN2019114217-appb-000049
Figure PCTCN2019114217-appb-000050
Figure PCTCN2019114217-appb-000050
4.4：4.4:
基于阶段三中各个时间段的关断变换过程损耗计算，得到测量下总的开通状态期间的损耗为各个部分之和P turn_off(measured): Based on the turn-off conversion process loss calculation in each time period in phase three, the total turn-on state loss under the measurement is the sum of each part P turn_off(measured) :
P turn_off(measured)＝P turn_off_mf+P turn_off_vr+P turn_off_cf P turn_off(measured) =P turn_off_mf +P turn_off_vr +P turn_off_cf
利用模型计算时，在实际器件关断变换情况下I pk和I r是测量得到的电流数值，并非HEMT器件内部实际沟道电流I channel，而实际的沟道电流I channel为测量得到的漏极电流减去给输出电容C oss充电部分的电流(即包括器件漏源电容电流I Cds和栅漏电容电流I Cgd)： When calculating with the model, I pk and I r are the measured current values when the actual device is switched off, not the actual channel current I channel inside the HEMT device, and the actual channel current I channel is the measured drain The current minus the current that charges the output capacitor C oss (that is, includes the device drain-source capacitance current I Cds and the gate drain capacitance current I Cgd ):
I channel＝I ds-I Cds-I Cgd≈I ds-I Cds I channel = I ds -I Cds -I Cgd ≈I ds -I Cds
考虑到给C oss充电多计算的损耗： Taking into account the calculated loss of charging C oss :
Figure PCTCN2019114217-appb-000051
Figure PCTCN2019114217-appb-000051
最终得到器件在关断过程中的实际损耗为：Finally, the actual loss of the device in the turn-off process is:
Figure PCTCN2019114217-appb-000052
Figure PCTCN2019114217-appb-000052
(5)最终，将器件开通，关断，开启变换和关断变换共计四个工作状态下的损耗相加，得到GaN HEMT器件总的的高频动态损耗P total： (5) Finally, add the losses in the four working states of device turn-on, turn-off, turn-on conversion and turn-off conversion to obtain the total high-frequency dynamic loss P total of the GaN HEMT device:
P total＝P off+P con+P turn_on+P turn_off P total ＝P off +P con +P turn_on +P turn_off
本实施例中采用的AlGaN/GaN HEMT器件动态阻抗提取电路，包括：待测的AlGaN/GaN HEMT器件、待测的AlGaN/GaN HEMT器件的供电输入单元V Bulk、阻性负载R LOAD、恒流单元I 1、恒流单元I 1的供电输入单元VCC、隔离二极管D 1和D 2、续流二极管D 3、防反向二极管D 5、钳位和续流二极管ZD 1、驱动单元、阻尼电阻R 1和R 2、负载电阻R t,所述供电输入单元V Bulk给AlGaN/GaN HEMT器件的漏级供电，在V Bulk与AlGaN/GaN HEMT器件的漏级之间还串连有阻性负载R LOAD，AlGaN/GaN HEMT器件的源极接地，驱动单元为AlGaN/GaN HEMT器件提供所需的驱动输入控制信号，供电输入单元VCC与防反向二极管D 5的正极连接，防反向二极管D 5的负极与恒流单元I 1的正极连接，恒流单元I 1的负极连接到D 2的正极，D 2的负极连接到D 1的正极，D 1的负极连接到AlGaN/GaN HEMT器件的漏级，R t一端与D 2的正极连接，另一端接地，D 3的负极与D 2的正极连接，D 3的正极与R 2连接，R 2另一端接地，ZD 1的负极与D 1的正极连接，ZD 1的正极与R 1连接，R 1另一端接地。 The AlGaN/GaN HEMT device dynamic impedance extraction circuit used in this embodiment includes: the AlGaN/GaN HEMT device to be tested, the power input unit V Bulk of the AlGaN/GaN HEMT device to be tested, the resistive load R LOAD , and the constant current Unit I 1 , power supply input unit VCC of constant current unit I 1 , isolation diodes D 1 and D 2 , freewheeling diode D 3 , anti-reverse diode D 5 , clamp and freewheeling diode ZD 1 , drive unit, damping resistor R 1 and R 2 , load resistance R t , the power supply input unit V Bulk supplies power to the drain level of the AlGaN/GaN HEMT device, and a resistive load is also connected in series between V Bulk and the drain level of the AlGaN/GaN HEMT device R LOAD , the source of the AlGaN/GaN HEMT device is grounded, the drive unit provides the required drive input control signal for the AlGaN/GaN HEMT device, the power supply input unit VCC is connected to the anode of the anti-reverse diode D 5 , and the anti-reverse diode D I 1 is connected to the positive electrode, negative electrode and the constant current unit I is a constant current unit 5 is connected to the positive electrode of the D 2, D 2 connected to the positive negative electrode D 1, D 1 is connected to the negative electrode AlGaN / GaN HEMT devices drain, R t one end and D connected to the positive 2 and the other end, D is negative and D. 3 connected to the positive 2, D positive electrode and R 3 2 are connected, R 2 other end, ZD negative electrode D 1 1 of The positive pole of ZD 1 is connected to the positive pole of ZD 1 to R 1 , and the other end of R 1 is grounded.
该电路采用双二极管隔离(DDI)方法获得较高的测量精度。特别地，该电路中的所有功能型器件均采用了低寄生电容的器件，改善了高频响应。比如，双隔离二极管D 1和D 2选择UF4007(1A/1000V)，其寄生电容在10V以下电压应力 时不到40pF，而他其反向恢复时间(trr)低于100ns。与此同时，钳位和续流二极管D 3和ZD 1选择1N4148(150mA/100V)和一般齐纳二极管(5V/0.5W)，其寄生电容在10V以下电压应力时仅为0.9pF，而其t rr均小于5ns。另外，恒流I 1由一个5V恒压源和一个3mA或更低的恒流二极管组成。恒流二极管实际上是栅源短路的结型晶体管，因此能够实现在较宽电压范围下的电流恒定。 This circuit adopts double diode isolation (DDI) method to obtain higher measurement accuracy. In particular, all functional devices in the circuit adopt devices with low parasitic capacitance, which improves high-frequency response. For example, double isolation diodes D 1 and D 2 choose UF4007 (1A/1000V), its parasitic capacitance is less than 40pF when the voltage stress is below 10V, and its reverse recovery time (trr) is less than 100ns. At the same time, the clamp and freewheeling diodes D 3 and ZD 1 choose 1N4148 (150mA/100V) and general Zener diodes (5V/0.5W). The parasitic capacitance is only 0.9pF when the voltage stress is below 10V, and its t rr are all less than 5ns. In addition, the constant current I 1 consists of a 5V constant voltage source and a 3mA or lower constant current diode. The constant current diode is actually a junction transistor with a short-circuited gate and source, so it can achieve a constant current in a wide voltage range.
也可以采用其他已公开的电路来提取AlGaN/GaN HEMT器件中的动态导通阻抗。Other published circuits can also be used to extract the dynamic on-resistance in the AlGaN/GaN HEMT device.
本实施例中采用的一种GaN HEMT器件的电流验证电路，包括GaN HEMT器件、电路驱动模块由数字脉冲信号发生源PWM、栅极上拉驱动电阻R g_on、栅极下拉驱动电阻R g_off、两个低压肖特基二极管组成，栅极上拉驱动电阻R g_on与一个低压肖特基二极管串联，栅极下拉驱动电阻R g_off与另一个低压肖特基二极管串联，然后两者串联的接在数字脉冲信号发生源PWM和GaN HEMT器件的栅极端之间。包括在GaN HEMT器件的源漏端并联外接电容C’ ds。还包括电感负载L1、续流二极管D1、负载电压V load和器件漏极供电V Bulk，所述GaN HEMT器件与电感负载L1、续流二极管D1、负载电压V load和器件漏极供电V Bulk串联。续流二极管D1与负载电压V load串联，电感负载L1并联在续流二极管D1与负载电压V load两端，与器件漏极供电V Bulk串联，器件漏极供电V Bulk另一端接地。该电路中在GaN HEMT器件的源漏端并联外接电容C’ ds。 A current verification circuit for a GaN HEMT device used in this embodiment includes a GaN HEMT device, a circuit drive module composed of a digital pulse signal generator PWM, a gate pull-up drive resistor R g_on , a gate pull-down drive resistor R g_off , two Two low-voltage Schottky diodes, the gate pull-up drive resistor R g_on is connected in series with a low-voltage Schottky diode, the gate pull-down drive resistor R g_off is connected in series with another low-voltage Schottky diode, and then the two are connected in series with the digital Between the pulse signal generating source PWM and the gate terminal of the GaN HEMT device. Including an external capacitor C'ds in parallel with the source and drain terminals of the GaN HEMT device. It also includes an inductive load L1, a freewheeling diode D1, a load voltage V load, and a device drain power supply V Bulk . The GaN HEMT device is connected in series with the inductive load L1, a freewheeling diode D1, a load voltage V load, and a device drain power supply V Bulk. . Freewheeling diode D1 in series with the load voltage V Load, inductive load L1 is connected in parallel a freewheeling diode D1 and the load voltage V Load at both ends, connected in series with the drain supply device Bulk V, V drain supply device Bulk ground. The parallel circuit external capacitor C 'ds at the end of the source and drain of GaN HEMT devices.
假定HEMT器件Q 1源漏寄生电容C ds不存在，把作为源漏两端并联外部源漏寄生电容C’ ds作为器件的源漏寄生电容，组成模拟器件部分Q’ 1进行测量。尽管在HEMT外部并联电容会导致测量得到的漏极电流I ds和模拟沟道电流I channel都会偏大，但是通过此方法可以用来比较HEMT器件漏极电流与实际沟道电流的差异。进而证实寄生电容参数对器件动态开关工作的实际影响，即在一定工作条件下，实测比较漏极电流和沟道电流的差异来源和大小，为GaN HEMT动态开关损耗模型的建立提供支持。 HEMT device Q 1 assumes the source-drain parasitic capacitance C ds does not exist, as the source and drain ends parallel external source-drain parasitic capacitance C 'ds as the source-drain parasitic capacitance of the device, consisting of an analog device part Q' 1 were measured. Although the parallel connection of capacitors outside the HEMT will cause the measured drain current I ds and the analog channel current I channel to be too large, this method can be used to compare the difference between the drain current of the HEMT device and the actual channel current. Furthermore, the actual effect of parasitic capacitance parameters on the dynamic switching operation of the device is confirmed, that is, under certain operating conditions, the actual measurement and comparison of the source and magnitude of the difference between the drain current and the channel current provide support for the establishment of the GaN HEMT dynamic switching loss model.
通过该电路，验证了器件的源漏寄生电容C ds在器件开关过程中，通过充电放电产生的电流会造成实际测量得到的漏极电流I ds和实际器件沟道电流I channel的差异，因此需要单独计算源漏寄生电容C ds充电放电的损耗，再在模型中对器件具体的开关损耗进行修正。 Through this circuit, it is verified that the source-drain parasitic capacitance C ds of the device during the switching process of the device, the current generated by charging and discharging will cause the difference between the actual measured drain current I ds and the actual device channel current I channel , so it needs Calculate the loss of charging and discharging the source and drain parasitic capacitance C ds separately, and then correct the specific switching loss of the device in the model.
上述实施例为本发明较佳的实施方式，但本发明的实施方式并不受上述实施例的限制，其他的任何未背离本发明的精神实质与原理下所作的改变、修饰、替代、组合、简化，均应为等效的置换方式，都包含在本发明的保护范围之内。The above-mentioned embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited by the above-mentioned embodiments, and any other changes, modifications, substitutions, combinations, etc. made without departing from the spirit and principle of the present invention Simplified, all should be equivalent replacement methods, and they are all included in the protection scope of the present invention.

Claims (10)

  1. 一种GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其步骤包括：A method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of GaN HEMT devices, the steps of which include:
    (1)测量并计算在在HEMT器件开关过程中，HEMT器件处在关断状态时，高漏极电压下的HEMT器件关断损耗P off； (1) Measure and calculate the HEMT device turn-off loss P off under high drain voltage when the HEMT device is in the off state during the switching process of the HEMT device;
    (2)测量并计算在HEMT器件完全开通后，HEMT器件处在饱和状态时，HEMT器件的开通损耗P con； (2) Measure and calculate the turn-on loss P con of the HEMT device when the HEMT device is in a saturated state after the HEMT device is fully turned on;
    (3)测量并计算HEMT器件处于从关断到开通之间的开启变换状态时，HEMT器件的开启变换损耗P turn_on； (3) Measure and calculate the turn-on conversion loss P turn_on of the HEMT device when the HEMT device is in the turn-on transition state from off to on;
    (4)测量并计算HEMT器件处于从开通到关断之间的关断变换状态时，HEMT器件的关断变换损耗P turn_off； (4) Measure and calculate the turn-off conversion loss P turn_off of the HEMT device when the HEMT device is in the turn-off transition state from on to off;
    (5)计算GaN HEMT器件总的的高频动态损耗P total： (5) Calculate the total high frequency dynamic loss P total of the GaN HEMT device:
    P total＝P off+P con+P turn_on+P turn_off P total ＝P off +P con +P turn_on +P turn_off
    其特征在于：建模过程中，采用器件高频工作时影响动态导通阻抗变化的参数来计算开通损耗P con。 It is characterized in that: during the modeling process, the parameters that affect the dynamic on-resistance change during high-frequency operation of the device are used to calculate the turn-on loss P con .
  2. 根据权利要求1所述的GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其特征在于：步骤(2)中器件处在开通状态，该阶段记为t 4-t 7时间段，此时间段内通过器件的电流的有效值I drain_rms为： The method for establishing a nonlinear segmented timing model of high-frequency dynamic loss of a GaN HEMT device according to claim 1, wherein the device is in the on state in step (2), and this stage is denoted as the time period t 4- t 7 , The effective value I drain_rms of the current passing through the device in this time period is:
    Figure PCTCN2019114217-appb-100001
    Figure PCTCN2019114217-appb-100001
    器件的开通损耗P con为： The turn-on loss P con of the device is:
    P con＝I drain_rms 2R dson_DCk dvk dfk ddk th_Rk cu； P con =I drain_rms 2 R dson_DC k dv k df k dd k th_R k cu ;
    上式中k dv、k df、k dd、k cu、k th_R分别为该阶段的电压、频率、占空比、电流和温度的线性系数，I drain_rms为通过器件的电流的有效值，R dson_DC为器件的开通状态下的导通阻抗。 In the above formula, k dv , k df , k dd , k cu , and k th_R are the linear coefficients of voltage, frequency, duty cycle, current, and temperature at this stage, respectively, I drain_rms is the effective value of the current through the device, R dson_DC It is the on resistance of the device in the on state.
  3. 根据权利要求2所述的GaN HEMT器件高频动态损耗的非线性分段时序 模型建立方法，其特征在于：所述k dv、k df、k dd、k cu、k th_R分别通过动态阻抗提取电路提取。 The method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of a GaN HEMT device according to claim 2, wherein the k dv , k df , k dd , k cu , and k th_R respectively pass through a dynamic impedance extraction circuit extract.
  4. 根据权利要求1-3中任一项所述的GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其特征在于：在计算HEMT器件的开启变换损耗P turn_on的过程中，通过采用栅电荷Q g的电容表征形式C gd_vf，来替代HEMT器件的输出电容C oss。 The method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of a GaN HEMT device according to any one of claims 1 to 3, characterized in that: in the process of calculating the turn-on conversion loss P turn_on of the HEMT device, by using The capacitance representation form C gd_vf of the gate charge Q g replaces the output capacitance C oss of the HEMT device.
  5. 根据权利要求4所述的GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其特征在于：步骤(3)中将HEMT器件从关断到开通之间的开启变换状态分为三个时间段；The method for establishing a non-linear segmented timing model of the high-frequency dynamic loss of a GaN HEMT device according to claim 4, characterized in that: in step (3), the turn-on transition state of the HEMT device from off to on is divided into three Time period
    第一时间段为HEMT器件从关断到初步开通，记为t 1-t 2阶段，漏极电流I ds处于线性上升的状态，由t 1时间点的0升至t 2时间点的起始电流I sta，同时漏极电压V ds由于寄生电感在di/dt影响下，下降到t 2的电压V r水平，该时间段的器件开启变换损耗P turn_on_cr计算方式为： The first time period is the HEMT device from turn-off to preliminary turn-on, which is recorded as the t 1 -t 2 stage, the drain current I ds is in a linearly rising state, from 0 at time t 1 to the beginning of time t 2 The current I sta and the drain voltage V ds drop to the voltage V r level of t 2 due to the parasitic inductance under the influence of di/dt. The device turn-on conversion loss P turn_on_cr during this time period is calculated as:
    Figure PCTCN2019114217-appb-100002
    Figure PCTCN2019114217-appb-100002
    Figure PCTCN2019114217-appb-100003
    Figure PCTCN2019114217-appb-100003
    Figure PCTCN2019114217-appb-100004
    Figure PCTCN2019114217-appb-100004
    Figure PCTCN2019114217-appb-100005
    Figure PCTCN2019114217-appb-100005
    式中，R turn_on_cr为开启变换状态中器件通阻，△V ds为漏极电压在该状态中的变化量，△I channel为沟道电流在该状态中的变化量，k dv、k df、k dd、k cu、k th_R分别为该阶段的电压、频率、占空比、电流和温度的线性系数，L eff_Gate和W eff_Gate分别为有效沟道长度和宽度，μ s为氮化镓电子迁移率，C gs为器件栅源电容，I sta为起始的漏极电流，V drive_H为器件开通时栅极驱动电压，L s是器件源极端和地之间的串联电感，V th为器件栅极阈值电压，g m为器件的跨导值，V mr为器件开通时的密勒平台电压，f s为器件工作频率，K lag是器件栅极开通延迟的拟合系数，通过测量器件在不同关断电压、工作频率和占空比下的开通时延得到的，t 1-t 2 代表t 1时间点到t 2时间点的长度，R g_on为栅极驱动的上拉电阻。 Where R turn_on_cr is the on-resistance of the device in the on-transition state, △V ds is the change in drain voltage in this state, △I channel is the change in channel current in this state, k dv , k df , k dd , k cu , k th_R are the linear coefficients of voltage, frequency, duty cycle, current and temperature at this stage, L eff_Gate and W eff_Gate are the effective channel length and width, respectively, μ s is the electron migration of gallium nitride C gs is the device gate-source capacitance, I sta is the initial drain current, V drive_H is the gate drive voltage when the device is turned on, L s is the series inductance between the device source terminal and ground, and V th is the device gate The extreme threshold voltage, g m is the transconductance value of the device, V mr is the Miller plateau voltage when the device is turned on, f s is the operating frequency of the device, and K lag is the fitting coefficient of the gate turn-on delay of the device. It is obtained from the turn-on delay under the turn-off voltage, operating frequency, and duty cycle, t 1 -t 2 represents the length from time t 1 to time t 2 , and R g_on is the pull-up resistor of the gate drive.
    第二时间段为器件进一步开启阶段，记为t 2-t 3阶段，通过电感负载流经器件的电流进一步增加，随着器件输出电容C oss的放电，漏极电压下降幅度变化很大，由高压状态下降到器件栅极阈值开启电压，同时电路中的杂散电感L stray和输出电容C oss共振，漏极电流I ds产生振荡。漏极电压V ds下降幅度变化大于第一时间段，该时间段内采用栅漏电荷Q gd替代电容C oss得到新的电容表征形式C gd_vf的方法来计算损耗，该时间段内器件电容C gd_vf计算方式、时间段t 2-t 3长度、该时间段内的平均沟道电流I vf和损耗P turn_on_vf的计算方法分别为： The second time period is the further turn-on period of the device, which is marked as t 2 -t 3 period. The current flowing through the device through the inductive load further increases. With the discharge of the device output capacitance C oss , the drain voltage drops greatly. The high voltage state drops to the gate threshold turn-on voltage of the device, and at the same time the stray inductance L stray and the output capacitor C oss in the circuit resonate, and the drain current I ds oscillates. The drain voltage V ds decreases more than the first time period. In this time period, the gate drain charge Q gd is used to replace the capacitance C oss to obtain a new capacitance characterization form C gd_vf to calculate the loss. The device capacitance C gd_vf in this time period The calculation method, the length of the time period t 2 -t 3 , the average channel current I vf and the loss P turn_on_vf in the time period are respectively:
    Figure PCTCN2019114217-appb-100006
    Figure PCTCN2019114217-appb-100006
    Figure PCTCN2019114217-appb-100007
    Figure PCTCN2019114217-appb-100007
    Figure PCTCN2019114217-appb-100008
    Figure PCTCN2019114217-appb-100008
    Figure PCTCN2019114217-appb-100009
    Figure PCTCN2019114217-appb-100009
    其中，△V为该阶段中栅极电压的变化量，V r为此阶段栅极电压参考值，L stray为电路中的杂散电感，C stray为电路中的杂散电容，
    Figure PCTCN2019114217-appb-100010
    为平均沟道电流，Q gd为栅漏电荷，R dson为器件的导通阻抗，R g_on为栅极驱动的上拉电阻；     Wherein, △ V for a gate voltage change amount of phase, V r gate voltage of the reference value for this stage, L stray stray inductance of the circuit, C stray stray capacitance of the circuit,
    Figure PCTCN2019114217-appb-100010
    Is the average channel current, Q gd of the gate-drain charge, R dson of the device on-resistance, R g_on gate driver pull-up resistor;
    第三时间段记为t 3-t 4阶段，漏极电压V ds降低到阈值电压V th以下，器件进入线性区，栅极电压维持在米勒平台电压V mr状态，此时间段的持续时间、该阶段内器件的开通电压V on_r和损耗P turn_on_mr分别为： The third time period is marked as t 3 -t 4 , the drain voltage V ds drops below the threshold voltage V th , the device enters the linear region, and the gate voltage remains at the Miller plateau voltage V mr . The duration of this time period , The turn-on voltage V on_r and loss P turn_on_mr of the device in this stage are:
    Figure PCTCN2019114217-appb-100011
    Figure PCTCN2019114217-appb-100011
    V on_r＝I staR dsonk dvk dfk ddk th_R V on_r = I sta R dson k dv k df k dd k th_R
    Figure PCTCN2019114217-appb-100012
    Figure PCTCN2019114217-appb-100012
    基于阶段三中各个时间段的开通过程损耗计算，得到测量下总的开通状态期间的损耗为各个部分之和：Based on the calculation of the turn-on loss during each time period in Phase 3, the total turn-on loss under the measurement is the sum of all parts:
    P turn_on(measured)＝P turn_on_cr+P turn_on_vf+P turn_on_mr P turn_on(measured) =P turn_on_cr +P turn_on_vf +P turn_on_mr
  6. 根据权利要求5所述的GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其特征在于：步骤(3)中，实际对器件开关损耗产生密切影响的是器件的沟道电流，实际的沟道电流I channel是漏极电流I ds和输出电容C oss放电电流： The method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of a GaN HEMT device according to claim 5, characterized in that: in step (3), it is the channel current of the device that actually has a close influence on the switching loss of the device. The actual channel current I channel is the drain current I ds and the discharge current of the output capacitor C oss :
    I channel＝I ds+I Cds+I Cgd≈I ds+I Cds I channel =I ds +I Cds +I Cgd ≈I ds +I Cds
    其中I Cds为器件漏源电容电流，I Cgd为器件栅漏电容电流，考虑到一般器件的漏源电容C ds远大于栅漏电容C gd，因而相比I Cds，计算时I Cgd可以忽略； Among them, I Cds is the device drain-source capacitance current, and I Cgd is the device gate-drain capacitance current. Considering that the drain-source capacitance C ds of a general device is much larger than the gate-drain capacitance C gd , compared with I Cds , I Cgd can be ignored in the calculation;
    考虑到输出电容C oss放电电流带来的损耗P turn_on_dis： Considering the loss P turn_on_dis caused by the discharge current of the output capacitor C oss :
    Figure PCTCN2019114217-appb-100013
    Figure PCTCN2019114217-appb-100013
    其中，V ds_off为器件关断时的漏极电压， Among them, V ds_off is the drain voltage when the device is turned off,
    将HEMT器件的实际开启变换损耗P turn_on修正为： Correct the actual turn-on conversion loss P turn_on of the HEMT device to:
    Figure PCTCN2019114217-appb-100014
    Figure PCTCN2019114217-appb-100014
  7. 根据权利要求5或6所述的GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其特征在于：步骤(4)中将HEMT器件从开通到关断之间的关断变换状态分为三个时间段；The method for establishing a non-linear segmented timing model of the high-frequency dynamic loss of a GaN HEMT device according to claim 5 or 6, characterized in that: in step (4), the off state of the HEMT device from on to off is changed Divided into three time periods;
    第一时间段器件开始由开通转换为关断状态，记为t 7-t 8阶段，漏极电压V ds开始上升同时漏电流I ds基本保持不变，器件工作在线性区，设定峰值电流I pk保持不变，V mr＝V mf，在该时间段范围，时间段长度t 7-t 8、器件的开通电压V on_f和时间内的损耗P turn_off_mf分别为： In the first period of time, the device starts to switch from on to off, which is marked as t 7 -t 8. The drain voltage V ds starts to rise while the leakage current I ds basically remains unchanged. The device works in the linear region and sets the peak current I pk remains unchanged, V mr = V mf , within this time period, the time period length t 7 -t 8 , the turn-on voltage V on_f of the device and the time loss P turn_off_mf are respectively:
    Figure PCTCN2019114217-appb-100015
    Figure PCTCN2019114217-appb-100015
    V on_f＝I pkR dsonk dvk dfk ddk th_R V on_f = I pk R dson k dv k df k dd k th_R
    Figure PCTCN2019114217-appb-100016
    Figure PCTCN2019114217-appb-100016
    其中，V mf为器件关断时的密勒平台电压，V drive_L为器件关断时栅极驱动电压，R g_off为栅极驱动的下拉电阻，I pk为峰值电流； Among them, V mf is the Miller plateau voltage when the device is turned off, V drive_L is the gate drive voltage when the device is turned off, R g_off is the pull-down resistance of the gate drive, and I pk is the peak current;
    第二时间段记为t 8-t 9，该时间段漏极电压大幅上升到关断电压V ds_off，上升幅度大于步骤(4)的第一时间段，漏电流开始下降到I r，在该时间段范围，时间段长度t 8-t 9、I r和损耗P turn_off_vr分别为： The second time period is denoted as t 8 -t 9. During this time period, the drain voltage rises sharply to the turn-off voltage V ds_off , and the rising amplitude is greater than the first time period of step (4). The leakage current begins to drop to I r , at which The time period range, the time period length t 8 -t 9 , Ir and loss P turn_off_vr are respectively:
    Figure PCTCN2019114217-appb-100017
    Figure PCTCN2019114217-appb-100017
    Figure PCTCN2019114217-appb-100018
    Figure PCTCN2019114217-appb-100018
    Figure PCTCN2019114217-appb-100019
    Figure PCTCN2019114217-appb-100019
    其中，dV ds为此时间段内漏极电压V ds的变化量，dt为此时间段的持续时长； Among them, dV ds is the amount of change in drain voltage V ds in the time period, and dt is the duration of the time period;
    第三时间段记为t 9-t 10，漏电流大幅下降，下降幅度大于第二时间段，同时漏电压处于震荡且相对稳定的高压水平，该时间段范围内，时间段长度t 9-t 10、损耗P turn_off_cf分别为： The third time period is denoted as t 9 -t 10 , the leakage current drops sharply, and the decrease is greater than the second time period, and the leakage voltage is at an oscillating and relatively stable high voltage level. Within this time period, the time period length is t 9 -t 10. Loss P turn_off_cf are:
    Figure PCTCN2019114217-appb-100020
    Figure PCTCN2019114217-appb-100020
    Figure PCTCN2019114217-appb-100021
    Figure PCTCN2019114217-appb-100021
    基于步骤(4)中各个时间段的关断变换过程损耗过程，得到测量下总的开通状态期间的损耗为各个部分之和P turn_off(measured): Based on the loss process of the turn-off transformation process in each time period in step (4), the total loss during the turn-on state under the measurement is the sum of each part P turn_off(measured) :
    P turn_off(measured)＝P turn_off_mf+P turn_off_vr+P turn_off_cf。 P turn_off(measured) = P turn_off_mf + P turn_off_vr + P turn_off_cf .
  8. 根据权利要求7所述的GaN HEMT器件高频动态损耗的非线性分段时序 模型建立方法，其特征在于：步骤(4)中利用模型计算时，在器件关断变换情况下实际对器件开关损耗产生密切影响的是器件的沟道电流，实际的沟道电流I channel为测量得到的漏极电流I ds减去给输出电容C oss充电部分的电流： The method for establishing a non-linear segmented time series model of high-frequency dynamic loss of a GaN HEMT device according to claim 7, characterized in that: in step (4), when the model is used for calculation, the switching loss of the device is actually reduced when the device is turned off. It is the channel current of the device that has a close influence. The actual channel current I channel is the measured drain current I ds minus the current that charges the output capacitor C oss :
    I channel＝I ds-I Cds-I Cgd≈I ds-I Cds I channel = I ds -I Cds -I Cgd ≈I ds -I Cds
    因此，考虑到给C oss充电多计算的损耗P turn_off_char： Therefore, considering the calculated loss P turn_off_char for charging C oss :
    Figure PCTCN2019114217-appb-100022
    Figure PCTCN2019114217-appb-100022
    将HEMT器件的实际关断变换损耗P turn_off修正为： Correct the actual turn-off conversion loss P turn_off of the HEMT device to:
    Figure PCTCN2019114217-appb-100023
    Figure PCTCN2019114217-appb-100023
  9. 根据权利要求7所述的GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其特征在于：步骤(1)中器件处在关断状态，漏极电压V ds处于高压状态，该阶段记为t 0-t 1、t 11-t 12和t 10-t 11时间段，其中t 0-t 1、t 11-t 12时间段在高压下器件会产生漏电流，造成损耗P off_n： The method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of a GaN HEMT device according to claim 7, wherein the device is in the off state in step (1), the drain voltage V ds is in a high-voltage state, and the The phases are denoted as t 0 -t 1 , t 11 -t 12 and t 10 -t 11 time periods, where t 0 -t 1 , t 11 -t 12 time periods will generate leakage current under high voltage, causing loss P off_n :
    Figure PCTCN2019114217-appb-100024
    Figure PCTCN2019114217-appb-100024
    其中f s、T、D、I lk分别为HEMT器件工作频率、工作周期、占空比、关断时器件漏极电流； Where f s , T, D, and I lk are the operating frequency, duty cycle, duty cycle, and drain current of the HEMT device when it is turned off, respectively;
    在t 10-t 11时间段，器件已经关断了，但是输出电容C oss和杂散电感L stray之间的共振还是会带来波形的振荡，此时，漏极电压波形的振荡还会带来一部分损耗，假定续流二极管的反向恢复为0，得到此阶段的损耗P off_vx为： In the period of t 10 -t 11, the device has been switched off, the resonance between the output capacitance C oss L stray inductance and stray oscillation waveform will still bring this case, the drain voltage of the oscillation waveform also with Come to a part of the loss, assuming that the reverse recovery of the freewheeling diode is 0, the loss P off_vx at this stage is obtained as:
    Figure PCTCN2019114217-appb-100025
    Figure PCTCN2019114217-appb-100025
    Figure PCTCN2019114217-appb-100026
    Figure PCTCN2019114217-appb-100026
    其中I r为反向电流，△V为器件在此阶段的振荡电压，V ds_pk为漏极电压峰值，V ds_off为漏极电压关断时数值； Where I r is the reverse current, △V is the oscillation voltage of the device at this stage, V ds_pk is the peak value of the drain voltage, and V ds_off is the value when the drain voltage is turned off;
    因此，在器件关断期间，器件的损耗模型P off为： Therefore, during the turn-off of the device, the loss model P off of the device is:
    P off＝P off_n+P off_vx。 P off = P off_n + P off_vx .
  10. 根据权利要求8所述的GaN HEMT器件高频动态损耗的非线性分段时序模型建立方法，其特征在于：步骤(1)中器件处在关断状态，漏极电压V ds处于高压状态，该阶段记为t 0-t 1、t 11-t 12和t 10-t 11时间段，其中t 0-t 1、t 11-t 12时间段在高压下器件会产生漏电流，造成损耗P off_n： The method for establishing a nonlinear segmented time series model of high-frequency dynamic loss of a GaN HEMT device according to claim 8, wherein the device is in the off state in step (1), the drain voltage V ds is in a high-voltage state, and the The phases are denoted as t 0 -t 1 , t 11 -t 12 and t 10 -t 11 time periods, where t 0 -t 1 , t 11 -t 12 time periods will generate leakage current under high voltage, causing loss P off_n :
    Figure PCTCN2019114217-appb-100027
    Figure PCTCN2019114217-appb-100027
    其中f s、T、D、I lk分别为HEMT器件开关工作频率、工作周期、占空比、关断时器件漏极电流； Where f s , T, D, and I lk are respectively the switching operating frequency, duty cycle, duty cycle, and drain current of the HEMT device when the device is turned off;
    在t 10-t 11时间段，器件已经关断了，但是输出电容C oss和杂散电感L stray之间的共振还是会带来波形的振荡，此时，漏极电压波形的振荡还会带来一部分损耗，假定续流二极管的反向恢复为0，得到此阶段的损耗P off_vx为： In the period of t 10 -t 11, the device has been switched off, the resonance between the output capacitance C oss L stray inductance and stray oscillation waveform will still bring this case, the drain voltage of the oscillation waveform also with Come to a part of the loss, assuming that the reverse recovery of the freewheeling diode is 0, the loss P off_vx at this stage is obtained as:
    Figure PCTCN2019114217-appb-100028
    Figure PCTCN2019114217-appb-100028
    Figure PCTCN2019114217-appb-100029
    Figure PCTCN2019114217-appb-100029
    其中I r为反向电流，△V为器件在此阶段的振荡电压，V ds_pk为漏极电压峰值，V ds_off为漏极电压关断时数值； Where I r is the reverse current, △V is the oscillation voltage of the device at this stage, V ds_pk is the peak value of the drain voltage, and V ds_off is the value when the drain voltage is turned off;
    因此，在器件关断期间，器件的损耗模型P off为： Therefore, during the turn-off of the device, the loss model P off of the device is:
    P off＝P off_n+P off_vx。 P off = P off_n + P off_vx .
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