CN103913690A - Method and system for measuring frequency dispersion characteristic of transistor output resistance - Google Patents
Method and system for measuring frequency dispersion characteristic of transistor output resistance Download PDFInfo
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- CN103913690A CN103913690A CN201410137354.0A CN201410137354A CN103913690A CN 103913690 A CN103913690 A CN 103913690A CN 201410137354 A CN201410137354 A CN 201410137354A CN 103913690 A CN103913690 A CN 103913690A
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Abstract
The invention discloses a method and system for measuring the frequency dispersion characteristic of transistor output resistance. The method includes the steps that a negative bias voltage is provided for the grid electrode of a transistor; a forward bias voltage and an AC signal are provided for the drain electrode of the transistor; the output resistance of the transistor is acquired when the AC signal is under a selected frequency; the corresponding relation between the output resistance and the selected frequency of the AC signal is acquired so as to obtain the frequency dispersion characteristic of the output resistance. By means of the method and system, the frequency dispersion characteristic of the transistor output resistance can be measured, the advantages of being simple to measure and high in accuracy are achieved, and the output resistance frequency dispersion characteristic obtained through the method and system can be used for evaluating material growth quality, monitoring technological processes, and analyzing device physical characteristics; in addition, technicians in the field can further use the frequency dispersion characteristic to correct the correlation of the output resistance of a frequency dispersion sub circuit in a large-signal model so as to accurately establish the large-signal model.
Description
Technical field
The present invention relates to technical field of integrated circuits, relate in particular to measuring method and the system of transistor output resistance Dispersion.
Background technology
At present, in the world to being for example that the research of the high electron mobility transistor materials such as gallium nitride (GaN) also faces a lot of bottlenecks, seriously restrict the development of transistor device and integrated circuit, its epitaxial growth is also in the jejune stage, in growth course, often can introduce a large amount of dislocations or defect, interface state is introduced in different materials interface at device, and in defects such as material internal introducing traps, produce dark trap level, seriously having changed the charge carrier generation in device channel catches and dispose procedure, greatly affect the variation of source-drain current, the power characteristic of device and the electrology characteristic of whole device.
Between device channel and substrate, the trap effect of interface can affect the electrology characteristic of device greatly, and the electric current of device and power are reduced greatly.Due to trap corresponding energy level time factor major part microsecond to millisecond between, therefore these trap major parts can only produce response to the AC signal below 500kHz, and can not change along with the signal of higher frequency, because the charge and discharge process of trap does not catch up with the rate of change of the signal of higher frequency, therefore by the LF-response tracing analysis to transistor device output resistances such as gallium nitride, especially the grid delay that output resistance frequency scattering properties (referred to as Dispersion) shows and leakage postpone, can measure and judge Trap Characteristics in device, judge the quality of quality of materials and device, and then the degree of stability of deduction device manufacturing process.
In the time of small-signal applications, a microwave radio circuit designers has been ignored frequency dispersion effect conventionally, because the frequency band that the general frequency range occurring of frequency dispersion is paid close attention to far below deviser.But when circuit is under large-signal excitation, large-signal model used need to all want accurate to the emulation of device DC and microwave characteristics.So in the process of establishing of large-signal model, need to consider trap effect, by the measurement of the Dispersion under low frequency to output resistance, can extract the output resistance low frequency scattering parameter relevant to trap effect, joined in the frequency dispersion electronic circuit of large-signal model model is revised, the power to device and intermodulation performance are carried out emulation more accurately.In sum, output resistance Dispersion tool simple and easy and that measure exactly transistor device is of great significance.
Summary of the invention
The object of the embodiment of the present invention is the problem that does not provide actual measurement transistor output resistance Dispersion in prior art in order to solve, and a kind of measuring method and system of the output resistance Dispersion that can measure transistor device is provided.
For achieving the above object, the technical solution used in the present invention is: a kind of measuring method of transistor output resistance Dispersion, comprising:
For transistorized grid provides negative sense bias voltage;
For transistorized drain electrode provides forward bias voltage and AC signal;
Obtaining transistor is the output resistance under selected frequency in described AC signal;
Obtain the corresponding relation between the selected frequency of described output resistance and described AC signal, to obtain described transistor output resistance Dispersion.
Preferably, described method also comprises: the processing that resists described forward bias voltage to disturb to described AC signal.
Preferably, described method also comprises: described forward bias voltage is isolated to the processing of described AC signal.
Preferably, described method also comprises: the amplitude of described AC signal is less than or equal to 500 millivolts.
Preferably, described method also comprises: the selected frequency of described AC signal is selected between 20Hz to 200KHz.
The described transistor that obtains is that the output resistance of selecting under frequency comprises in described AC signal:
Obtain the drain-source voltage between described transistorized drain electrode and source electrode;
Utilize sampling resistor to obtain the drain-source current between described transistorized drain electrode and source electrode;
According to described transistorized drain-source voltage and drain-source current, obtaining described transistor is the output resistance under selected frequency in described AC signal.
For achieving the above object, the technical solution used in the present invention is: a kind of measuring system of transistor output resistance Dispersion, comprising:
The first DC power supplier, is used to transistorized grid that negative sense bias voltage is provided;
The second DC power supplier, is used to transistorized drain electrode that forward bias voltage is provided;
AC signal output module, is used to transistorized drain electrode that AC signal is provided;
Output resistance measurement module is the output resistance under selected frequency for obtaining transistor in described AC signal; And,
Dispersion output module, for obtaining the corresponding relation between the selected frequency of described output resistance and described AC signal, to obtain described transistor output resistance Dispersion.
Preferably, described system also comprises: immunity module, and for the processing that resists described forward bias voltage to disturb described AC signal.
Preferably, described system also comprises: isolation module, and for described forward bias voltage being isolated to the processing of described AC signal.
Preferably, described output resistance measurement module comprises:
The first voltage measurement unit, for obtaining the drain-source voltage between described transistorized drain electrode and source electrode;
Second voltage measuring unit, for utilizing sampling resistor to obtain the drain-source current between described transistorized drain electrode and source electrode; And,
Output resistance computing unit, for according to described transistorized drain-source voltage and drain-source current, obtaining described transistor is the output resistance under selected frequency in described AC signal.
Beneficial effect of the present invention is, the measuring method of transistor output resistance Dispersion of the present invention and system can realize the measurement of the Dispersion to transistor output resistance, and there is simple and the high feature of accuracy measured, the output resistance Dispersion obtaining by measuring method of the present invention and system, can be used for the growth quality of evaluating material, monitoring technological process, the physical characteristics parameter of analysis device, in addition, those skilled in the art can also utilize this Dispersion to revise the relevant water of the output resistance of frequency dispersion electronic circuit in large-signal model, to set up more accurately large-signal model.
Accompanying drawing explanation
Fig. 1 shows according to the process flow diagram of a kind of embodiment of the measuring method of transistor output resistance Dispersion of the present invention;
Fig. 2 shows according to the frame principle figure of a kind of embodiment of the measuring system of transistor output resistance Dispersion of the present invention;
Fig. 3 shows the concrete implementing circuit of one of measuring system shown in Fig. 2;
Fig. 4 shows the curve that utilizes the corresponding relation between reaction GaN high electron mobility transistor output resistance and the selected frequency of AC signal that the measuring system shown in Fig. 3 measures.
Embodiment
Describe embodiments of the invention below in detail, the example of described embodiment is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the embodiment being described with reference to the drawings, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
As shown in Figure 1, the measuring method of transistor output resistance Dispersion of the present invention comprises the steps:
Step S1: for transistorized grid provides negative sense bias voltage.
Step S2: for transistorized drain electrode provides forward bias voltage.
Step S3: for transistorized drain electrode provides AC signal.
Step S4: obtaining transistor is the output resistance under selected frequency in AC signal.
Step S5: obtain the corresponding relation between the selected frequency of output resistance and AC signal, to obtain transistor output resistance Dispersion, can be by changing the selected frequency of AC signal at this, utilize step S4 to obtain the corresponding relation between the selected frequency of output resistance and AC signal.
For when AC signal is coupled to transistorized drain electrode, prevent the interference of forward bias voltage, method of the present invention can also be carried out to AC signal the processing of anti-forward bias voltage interference, at this, can utilize electric capacity to realize this jamproof processing.
Affected by AC signal for fear of forward bias voltage, method of the present invention also can comprise the processing of forward bias voltage being isolated to AC signal, at this, can utilize inductance, photoelectrical coupler etc. to realize the processing of this isolation AC signal.
At this, due to transistorized nonlinear characteristic, the amplitude of above-mentioned AC signal is difficult for excessive, preferably be less than or equal to 500 millivolts, particularly between 200 millivolts to 500 millivolts, select, for example, in the embodiment shown in fig. 3, the amplitude of this AC signal is chosen as 300 millivolts.
Because method of the present invention is mainly the low frequency scattering properties in order to obtain transistor output resistance, therefore the selected frequency of above-mentioned AC signal is selected conventionally between 20Hz to 200KHz, survey crew can select multiple selected frequencies to measure as sampled point within the scope of said frequencies, to obtain the curve of the corresponding relation between reaction output resistance and the selected frequency of AC signal, react the curve of output resistance Dispersion, sampled point can comprise the selected frequency that survey crew is selected according to the actual requirements and/or the selected frequency of selecting according to certain rule, this rule can be periodic sampling, or choose more sampled point at output resistance with the vertiginous frequency band of change of selected frequency, and choose relatively less sampled point at the frequency band slowly changing.
In above-mentioned steps S4, obtaining transistor is that the output resistance of selecting under frequency can specifically comprise the steps: in AC signal
Step S41: obtain the drain-source voltage between transistorized drain electrode and source electrode, for example, can measure by voltage table.
Step S42: utilize sampling resistor to obtain the drain-source current between transistorized drain electrode and source electrode, by directly obtaining the voltage at sampling resistor two ends, and the indirect electric current that obtains the sampling resistor of flowing through, and by sampling resistor is connected with transistorized drain electrode, can make drain-source current equate with the electric current of the sampling resistor of flowing through.
Step S43: according to transistorized drain-source voltage and drain-source current, obtaining transistor is the output resistance under selected frequency in AC signal, and at this, output resistance equals drain-source voltage divided by this drain-source current.
At this, method of the present invention is especially for the Dispersion of measuring High Electron Mobility Transistor output resistance, this transistor is for example gallium nitride transistor, gallium arsenide transistor, antimonide transistor etc., certain method of the present invention has versatility, and it is also applicable to measure the Dispersion of other types transistor output resistance.
Correspondingly, as shown in Figure 2, the measuring system of transistor output resistance Dispersion of the present invention comprises the first DC power supplier 1, the second DC power supplier 2, AC signal output module 3, output resistance measurement module 4 and Dispersion output module 5, and this first DC power supplier 1 is used to transistorized grid that negative sense bias voltage is provided; This second DC power supplier 2 is used to transistorized drain electrode that forward bias voltage is provided; This AC signal output module 3 is used to transistorized drain electrode that AC signal is provided; This output resistance measurement module 4 is the output resistance under selected frequency for obtaining transistor in AC signal; This Dispersion output module 5 is for obtaining the corresponding relation between the selected frequency of described output resistance and AC signal, to obtain output resistance Dispersion.
System of the present invention can also comprise immunity module, for AC signal being carried out to the processing of anti-forward bias voltage interference.System of the present invention can also comprise isolation module, for forward bias voltage being isolated to the processing of AC signal.
Above-mentioned output resistance measurement module 4 can comprise the first voltage measurement unit, second voltage measuring unit and output resistance computing unit, and this first voltage measurement unit is for obtaining the drain-source voltage between transistorized drain electrode and source electrode; This second voltage measuring unit is for utilizing sampling resistor to obtain the drain-source current between transistorized drain electrode and source electrode; This output resistance computing unit is used for according to transistorized drain-source voltage and drain-source current, and obtaining transistor is the output resistance under selected frequency in AC signal.
Fig. 3 has provided a kind of specific embodiment of measuring gallium nitride transistor output resistance Dispersion of system of the present invention, in this embodiment, the negative pole of the first DC voltage module 1 is electrically connected with the grid G of transistor 10, and plus earth thinks that the grid G of transistor 10 provides negative sense bias voltage; The positive pole of the second DC voltage module 2 can be electrically connected with the drain electrode S of transistor 10 through the inductance 8 as isolation module and sampling resistor R, and minus earth, thinks that the drain electrode S of transistor 10 provides forward bias voltage; AC signal output module 3 can be electrically connected with the drain electrode S of transistor 10 through the electric capacity 70 as immunity module and sampling resistor R, thinks that the drain electrode S of transistor 10 provides AC signal.Be for example the drain-source voltage of the first voltage measurement unit measurement transistor 10 of voltage table Vds, due in the embodiments of figure 3, the source S ground connection of transistor 10, therefore, can measure transistorized drain electrode S voltage over the ground; Be for example the voltage at the second voltage measuring unit measurement sampling resistor R two ends of voltage table Vr, to obtain transistorized drain-source current, so just can utilize and obtain transistor is the output resistance under selected frequency in AC signal.By making AC signal output module 3 change the selected frequency of AC signal, can obtain reaction output resistance Rds(Ohm as shown in Figure 4, ohm) with the selected frequency f (Hz of AC signal, hertz) between the curve of corresponding relation, react the curve of transistor output resistance Dispersion, at this, can obtain continuous curve by carry out linear interpolation between adjacent employing point.Curve as shown in Figure 4 can be found out, transistor output resistance is maximum under extremely low selected frequency 20Hz, along with the increase output resistance of frequency reduces rapidly, in the time that selected frequency is greater than 100Hz, the speed that output resistance reduces slows down, in the time that selected frequency solves 100KHz, output resistance slightly increases, output resistance can not change substantially afterwards, because now trap has not caught up with the rate of change of high-frequency signal, output resistance can be along with the continuation of selected frequency increases and constantly declines.
Owing to being for example that the high-purity growth conditions of semiconductor material of gallium nitride is also in development process, the unique physical of gallium nitride semiconductor material makes its interfacial characteristics more complicated with respect to conventional semiconductors, all can there is defect at material interface or inside, surface state and inherent vice all can cause gallium nitride tube device to have a lot of traps to exist, cause grid delay, leak the effects such as delay, current collapse, frequency scattering, the performance of serious shadow gallium nitride device and circuit.The measurement of output resistance Dispersion curve can be for the physical characteristics parameter of the growth quality of evaluating material, monitoring technological process, analysis device.Comprise simultaneously the output resistance curve of Dispersion can be more comprehensively the output resistance characteristic of reaction member exactly, can revise the output resistance related data of frequency dispersion electronic circuit in large-signal model with measuring the output resistance data that comprise Dispersion of extracting, set up more accurately large-signal model, the nonlinear characteristic of device is carried out to emulation more accurately, device modeling work is had to directive significance very much.
Describe structure of the present invention, feature and action effect in detail according to the embodiment shown in graphic above; the foregoing is only preferred embodiment of the present invention; but the present invention does not limit practical range with shown in drawing; every change of doing according to conception of the present invention; or be revised as the equivalent embodiment of equivalent variations; when not exceeding yet instructions and illustrating contain spiritual, all should be in protection scope of the present invention.
Claims (10)
1. a measuring method for transistor output resistance Dispersion, is characterized in that, comprising:
For transistorized grid provides negative sense bias voltage;
For transistorized drain electrode provides forward bias voltage and AC signal;
Obtaining transistor is the output resistance under selected frequency in described AC signal;
Obtain the corresponding relation between the selected frequency of described output resistance and described AC signal, to obtain described transistor output resistance Dispersion.
2. method according to claim 1, is characterized in that, described method also comprises:
The processing that resists described forward bias voltage to disturb to described AC signal.
3. method according to claim 1 and 2, is characterized in that, described method also comprises:
Described forward bias voltage is isolated to the processing of described AC signal.
4. method according to claim 1, is characterized in that, described method also comprises:
The amplitude of described AC signal is less than or equal to 500 millivolts.
5. according to the method described in claim 1 or 4, it is characterized in that, described method also comprises:
The selected frequency of described AC signal is selected between 20Hz to 200KHz.
6. method according to claim 1, is characterized in that, described in to obtain transistor be that output resistance under selected frequency comprises in described AC signal:
Obtain the drain-source voltage between described transistorized drain electrode and source electrode;
Utilize sampling resistor to obtain the drain-source current between described transistorized drain electrode and source electrode;
According to described transistorized drain-source voltage and drain-source current, obtaining described transistor is the output resistance under selected frequency in described AC signal.
7. a measuring system for transistor output resistance Dispersion, is characterized in that, comprising:
The first DC power supplier, is used to transistorized grid that negative sense bias voltage is provided;
The second DC power supplier, is used to transistorized drain electrode that forward bias voltage is provided;
AC signal output module, is used to transistorized drain electrode that AC signal is provided;
Output resistance measurement module is the output resistance under selected frequency for obtaining transistor in described AC signal; And,
Dispersion output module, for obtaining the corresponding relation between the selected frequency of described output resistance and described AC signal, to obtain described transistor output resistance Dispersion.
8. system according to claim 7, is characterized in that, described system also comprises:
Immunity module, for the processing that resists described forward bias voltage to disturb described AC signal.
9. according to the system described in claim 7 or 8, it is characterized in that, described system also comprises:
Isolation module, for isolating the processing of described AC signal to described forward bias voltage.
10. system according to claim 7, described output resistance measurement module comprises:
The first voltage measurement unit, for obtaining the drain-source voltage between described transistorized drain electrode and source electrode;
Second voltage measuring unit, for utilizing sampling resistor to obtain the drain-source current between described transistorized drain electrode and source electrode; And,
Output resistance computing unit, for according to described transistorized drain-source voltage and drain-source current, obtaining described transistor is the output resistance under selected frequency in described AC signal.
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| CN106845025A (en) * | 2016-04-01 | 2017-06-13 | 电子科技大学 | The big signal statistics model modelling approach of GaN high electron mobility transistor |
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