CN102565650A - Measuring system of GaN HEMT device transconductance frequency scattering characteristic and method thereof - Google Patents
Measuring system of GaN HEMT device transconductance frequency scattering characteristic and method thereof Download PDFInfo
- Publication number
- CN102565650A CN102565650A CN2010105752783A CN201010575278A CN102565650A CN 102565650 A CN102565650 A CN 102565650A CN 2010105752783 A CN2010105752783 A CN 2010105752783A CN 201010575278 A CN201010575278 A CN 201010575278A CN 102565650 A CN102565650 A CN 102565650A
- Authority
- CN
- China
- Prior art keywords
- gan hemt
- hemt device
- signal
- grid
- voltage table
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The invention relates to a measuring system of a GaN HEMT device transconductance frequency scattering characteristic and a method thereof, belonging to the field of integrated circuit technology. The measuring system comprises a first direct current power supply, a second direct current power supply, an alternating current signal providing apparatus, a capacitor, an inductor, a resistor, a first voltage meter and a second voltage meter. A drain electrode is connected with the resistor. The resistor is connected with the first direct current power supply. The first voltage meter and the resistor are in parallel connection. A grid and the second voltage meter are in parallel connection. The capacitor is connected between the grid and the alternating current signal providing apparatus. The inductor is connected between the grid and the second direct current power supply. Through the frequency scattering characteristic measured by the measuring system, magnitude of device surface state and trap can be deducted, thus quality of material and a device is judged. Simultaneously, a transconductance curve comprising the frequency scattering characteristic can accurately represent a direct current characteristic of the device and is related with extraction of a frequency scattering parameter in a model, and the system and the method are meaningful for the establishment of a device model.
Description
Technical field
The present invention relates to a kind of measuring system and method for GaN HEMT device mutual conductance Dispersion, relate in particular to a kind of measuring system and method for GaN HEMT device mutual conductance low frequency scattering properties, belong to technical field of integrated circuits.
Background technology
Because the GaN material is a kind of new material, this material also is in development and conceptual phase, and its epitaxial growth simultaneously also is in the jejune stage; Therefore in growth course, can introduce dislocation or tomography, can make material itself introduce impurity or defective like this, also can introduce interface state at the interface at the different materials of device simultaneously; And there are defectives such as trap at material internal; In being with, will produce very dark trap level like this, they can produce the process of catching and discharging to the charge carrier in the device channel, will influence the variation of source-drain current like this; The corresponding power characteristic that also can influence device all has very big influence to the electrology characteristic of entire device.
Trap effect can be brought a lot of harmful effects, can cause the electric current of device and power all to have substantial degradation.Since the time factor major part of the corresponding energy level of trap institute microsecond to millisecond between; That is to say that these trap major parts can only produce response to the AC signal below the 1MHz; And can not change along with the signal of higher frequency; Because the charge and discharge process of trap does not catch up with the rate of change of the signal of higher frequency, so trap can not show state basically under high-frequency very change.Therefore can be through the measurement of the LF-response of GaN HEMT device mutual conductance being judged what of trap in the device, and then judge the reliability and the degree of stability of quality of materials and device technology processing procedure, so it can be from the quality of exosyndrome material on the macroscopic view and device.Simultaneously owing to the setting up in the process of large-signal model, also need consider trap effect, the measurement of the low frequency scattering properties through mutual conductance can extract the partial parameters relevant with trap effect, to the foundation of GaN HEMT device large-signal model also highly significant.In sum, it is quite important accurately to measure the frequency scattering properties of GaN HEMT device.
Summary of the invention
The objective of the invention is to be used for assessment to device material quality and device performance based on Dispersion; The low frequency of mutual conductance simultaneously (below the 1MHz) scattering properties also provides important data to the foundation of device model; And because the trap effect in device surface and the material mainly produces response to 1MHz with interior signal; So in order to study the influence of low frequency signal, and a kind of measuring system and method for GaN HEMT device mutual conductance Dispersion are provided to GaN HEMT device transconductance characteristic.
The technical scheme that the present invention solves the problems of the technologies described above is following: a kind of measuring system of GaN HEMT device mutual conductance Dispersion comprises first direct supply, second direct supply, AC signal generator, electric capacity, inductance, resistance, first voltage table and second voltage table, and said GaN HEMT device comprises grid, drain electrode and source electrode; The source ground of said GaN HEMT device; The drain electrode of said GaN HEMT device links to each other with resistance; Said resistance links to each other with first direct supply; The drain electrode that said first direct supply is used to GaN HEMT device provides forward bias voltage, and said first voltage table and resistance are in parallel, and said first voltage table is used for the voltage at measuring resistance two ends; The grid and second voltage table of said GaN HEMT device are in parallel; Said second voltage table is used for the gate source voltage of GaN HEMT device is monitored; Said electric capacity is connected between the grid and AC signal generator of GaN HEMT device; The grid that said AC signal generator is used to GaN HEMT device provides AC signal; Said inductance is connected between the grid and second direct supply of GaN HEMT device, and the grid that said second direct supply is used to GaN HEMT device provides the negative sense bias voltage.
On the basis of technique scheme, the present invention can also do following improvement.
Further, the amplitude of the AC signal that said AC signal generator provides is less than 250mV, and the frequency of AC signal is between 10Hz～1MHz.
The present invention also provides a kind of technical scheme that solves the problems of the technologies described above following: a kind of measuring method of GaN HEMT device mutual conductance Dispersion may further comprise the steps:
1) regulating the AC signal generator makes it that AC signal of different frequency is provided; And first voltage table that is in parallel of monitoring and resistance R; And second voltage table parallelly connected with GaN HEMT device grids, note the reading V of first voltage table under the AC signal of different frequency respectively
RReading V with second voltage table
Gs
2) through formula I
R=V
R/ R calculates the electric current I that flows through resistance under the AC signal of different frequency
R, this electric current I
RDrain-source current I with GaN HEMT device
DsEquate, thereby obtain the drain-source current of GaN HEMT device and the relation between the AC signal frequency;
3) through formula gm=I
Ds/ V
GsCalculate different GaN HEMT device drain-source current I
DsThe mutual conductance of corresponding GaN HEMT device, thus the mutual conductance of GaN HEMT device and the relation between the AC signal frequency obtained.
The invention has the beneficial effects as follows: the measurement data of the GaN HEMT device transconductance characteristic that the measuring system through GaN HEMT device mutual conductance Dispersion of the present invention obtains; Because the Dispersion of GaN HEMT device mutual conductance is relevant with the trap effect of device; Can infer what of GaN device surface attitude and trap qualitatively from the order of severity of Dispersion, and then judge the quality of material and device; Measurement data can be assessed the quality of epitaxial material growth quality, the degree of monitoring process consistency and stability, the quality of qualitative reflection material and device performance on the macroscopic view; Dispersion reflects a kind of lag characteristic of exporting signal with respect to input signal simultaneously; The transconductance curve that comprises Dispersion is the DC characteristic of characterizing device accurately; Can extract partial parameters relevant in the large-signal model with trap; Foundation to device model also provides data necessary, and the model that has comprised the frequency scattering parameter can reflect the actual characteristic of device more accurately.
Description of drawings
Fig. 1 is the structural representation of the measuring system of embodiment of the invention GaN HEMT device mutual conductance Dispersion;
Fig. 2 is the mutual conductance of embodiment of the invention GaN HEMT device and the change curve of AC signal frequency.
Embodiment
Below in conjunction with accompanying drawing principle of the present invention and characteristic are described, institute gives an actual example and only is used to explain the present invention, is not to be used to limit scope of the present invention.
Fig. 1 is the structural representation of the measuring system of embodiment of the invention GaN HEMT device mutual conductance Dispersion.As shown in Figure 1; The measuring system of said GaN HEMT device mutual conductance Dispersion comprises first direct supply 103, second direct supply 108, AC signal generator 106, electric capacity 105, inductance 107, resistance 101, first voltage table 102 and second voltage table 104, and said GaN HEMT device 100 comprises grid, drain electrode and source electrode; The source ground of said GaN HEMT device 100; The drain electrode of said GaN HEMT device 100 links to each other with resistance 101; Said resistance 101 links to each other with first direct supply 103; The drain electrode that said first direct supply 103 is used to GaN HEMT device 100 provides forward bias voltage, and said first voltage table 102 is in parallel with resistance 101, and said first voltage table 102 is used for the voltage at measuring resistance 101 two ends; The grid of said GaN HEMT device 100 and second voltage table 104 are in parallel; Said second voltage table 104 is used for the gate source voltage of GaN HEMT device 100 is monitored; Said electric capacity 105 is connected between the grid and AC signal generator 106 of GaN HEMT device 100; The grid that said AC signal generator 106 is used to GaN HEMT device 100 provides AC signal; Said inductance 107 is connected between the grid and second direct supply 108 of GaN HEMT device 100, and the grid that said second direct supply 108 is used to GaN HEMT device 100 provides the negative sense bias voltage.Since need add direct current and AC signal excitation simultaneously at grid, thus need to adopt electric capacity to be coupled into AC signal, and prevent the interference of direct supply, and direct supply also need adopt inductance to isolate AC signal.The outer meeting resistance that drain electrode place connects can play the effect of stablizing GaN HEMT device; In the present embodiment; Said resistance is chosen the suitable resistance with drain terminal output resistance Rds, generally greater than 50 ohm, so choose 100 Europe or 200 Europe; But different device R ds is difference slightly, need choose according to actual conditions.Inductance and electric capacity are the bigger the better, and isolation effect is just good more like this, maximum induction and electric capacity that selection just can be found, and in the present embodiment, electric capacity is hundreds of uF, inductance is homemade telefault.
In the present embodiment; Said GaN HEMT device is placed on Cascade summit 9000 probe stations when measuring; Adopt the two paths of signals in the HP6624A power supply bias voltage to be provided for respectively grid and drain electrode in the GaN HEMT device; Wherein, grid provides the negative sense bias voltage, and drain electrode provides forward bias voltage.Said AC signal generator is an Agilent 33220A function generator; For grid provides an AC signal, amplitude is 250mV, the variation of manual adjustments frequency; And adopt capacitive coupling to get into grid; Prevent the interference of direct current signal to it, the direct current biasing of grid adopts the mode of connecting with inductance to insert grid simultaneously, prevents the interference of AC signal to DC source.Adopt second voltage table to gate source voltage V
GsMonitor, at resistance of drain electrode serial connection, its two ends parallel connection first voltage table can pass through I like this
R=V
R/ R monitors electric current, again through calculating gm=I
Ds/ V
Gs=I
R/ V
Gs, the frequency of each AC signal, corresponding different V
GsAnd I
R, also just obtain different gm values, so just obtain the corresponding relation of mutual conductance and frequency, the frequency scattering properties of mutual conductance just.Grid voltage can also be changed, thereby Dispersion corresponding under the different grid voltages can be obtained.
Fig. 2 is the mutual conductance of embodiment of the invention GaN HEMT device and the change curve of AC signal frequency.As shown in Figure 2; Can find out in that to approach under the low frequency of dc state transconductance value big a little, along with the increase mutual conductance of frequency also reduces gradually, to minimum near the last 1MHz; If frequency up increases again; Mutual conductance can not change basically, because the trap of this moment has not caught up with the rate of change of high-frequency signal, mutual conductance can not increase along with the continuation of frequency and constantly descend yet.
The high-purity growth conditions of compound semiconductor materials such as GaN material is also in continuous evolution; Therefore its interfacial characteristics is complicated more with respect to conventional semiconductors; Again because in material interface or inner can the existence or other unnecessary defectives of mixing, therefore can there be surface state in the unique physical of GaN material at device surface; Defective is introduced in inner meeting; These all can cause GaN HEMT device to have a lot of traps to exist, and these traps can cause a lot of bad influences, comprise grid delay, leak effects such as delay, current collapse, frequency scattering.And the mutual conductance frequency scattering effect here can be used for the growth quality of evaluating material, the degree of purity and the accuracy of monitoring technological process, the physical characteristics parameter of analysis device etc.
The measuring system of GaN HEMT device mutual conductance Dispersion of the present invention measures the variation relation of device mutual conductance along with frequency; Can be according to the severe of mutual conductance with change of frequency; The device mutual conductance of different structure is with change of frequency; And then the growing state of analysis comparative device material; Judge the influence of different process flow process to device property, required parameter extraction data are provided for simultaneously the model of GaN HEMT device, the introducing of frequency dispersion parameter makes device model can better carry out the emulation of nonlinear characteristic.The measurement that facts have proved GaN HEMT device mutual conductance Dispersion provides very big directive function to the research of HEMT device related work.This measuring method is applicable to that also GaAs HEMT and other receive the measurement of the HEMT device mutual conductance Dispersion of trap effect influence.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (3)
1. the measuring system of a GaN HEMT device mutual conductance Dispersion; It is characterized in that; Said measuring system comprises first direct supply, second direct supply, AC signal generator, electric capacity, inductance, resistance, first voltage table and second voltage table, and said GaN HEMT device comprises grid, drain electrode and source electrode; The source ground of said GaN HEMT device; The drain electrode of said GaN HEMT device links to each other with resistance; Said resistance links to each other with first direct supply; The drain electrode that said first direct supply is used to GaN HEMT device provides forward bias voltage, and said first voltage table and resistance are in parallel, and said first voltage table is used for the voltage at measuring resistance two ends; The grid and second voltage table of said GaN HEMT device are in parallel; Said second voltage table is used for the gate source voltage of GaN HEMT device is monitored; Said electric capacity is connected between the grid and AC signal generator of GaN HEMT device; The grid that said AC signal generator is used to GaN HEMT device provides AC signal; Said inductance is connected between the grid and second direct supply of GaN HEMT device, and the grid that said second direct supply is used to GaN HEMT device provides the negative sense bias voltage.
2. the measuring system of GaN HEMT device mutual conductance Dispersion according to claim 1 is characterized in that the amplitude of the AC signal that said AC signal generator provides is less than 250mV, and the frequency of AC signal is between 10Hz～1MHz.
3. the measuring method of a GaN HEMT device mutual conductance Dispersion is characterized in that said measuring method may further comprise the steps:
1) regulating the AC signal generator makes it that AC signal of different frequency is provided; And first voltage table that is in parallel of monitoring and resistance R; And second voltage table parallelly connected with GaN HEMT device grids, note the reading V of first voltage table under the AC signal of different frequency respectively
RReading V with second voltage table
Gs
2) through formula I
R=V
R/ R calculates the electric current I that flows through resistance under the AC signal of different frequency
R, this electric current I
RDrain-source current I with GaN HEMT device
DsEquate, thereby obtain the drain-source current of GaN HEMT device and the relation between the AC signal frequency;
3) through formula gm=I
Ds/ V
GsCalculate different GaN HEMT device drain-source current I
DsThe mutual conductance of corresponding GaN HEMT device, thus the mutual conductance of GaN HEMT device and the relation between the AC signal frequency obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010575278 CN102565650B (en) | 2010-12-07 | 2010-12-07 | Measuring system of GaN HEMT device transconductance frequency scattering characteristic and method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201010575278 CN102565650B (en) | 2010-12-07 | 2010-12-07 | Measuring system of GaN HEMT device transconductance frequency scattering characteristic and method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102565650A true CN102565650A (en) | 2012-07-11 |
| CN102565650B CN102565650B (en) | 2013-12-25 |
Family
ID=46411560
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201010575278 Active CN102565650B (en) | 2010-12-07 | 2010-12-07 | Measuring system of GaN HEMT device transconductance frequency scattering characteristic and method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102565650B (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102830337A (en) * | 2012-08-29 | 2012-12-19 | 中国电子科技集团公司第十三研究所 | System for testing direct current performance of wide bandgap semiconductor chip |
| CN103344851A (en) * | 2013-06-24 | 2013-10-09 | 江苏博普电子科技有限责任公司 | Pulsed DC testing system and method of GaN HEMT microwave power device |
| CN103913690A (en) * | 2014-04-04 | 2014-07-09 | 中国科学院微电子研究所 | Method and system for measuring frequency dispersion characteristic of transistor output resistance |
| CN106845025A (en) * | 2016-04-01 | 2017-06-13 | 电子科技大学 | The big signal statistics model modelling approach of GaN high electron mobility transistor |
| CN107144775A (en) * | 2017-05-22 | 2017-09-08 | 西安电子科技大学 | A kind of measurement apparatus and method of CMOS inverter mutual conductance coefficient |
| CN107703431A (en) * | 2017-09-11 | 2018-02-16 | 西安电子科技大学 | Device surface state trap measuring method based on changeable frequency pulse technique |
| CN113252987A (en) * | 2021-07-05 | 2021-08-13 | 西安众力为半导体科技有限公司 | Dynamic resistance test circuit of GaN HEMT power device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4977371A (en) * | 1989-01-06 | 1990-12-11 | Siemens Aktiengesellschaft | Variable frequency I-V measurement system |
| JP2000241491A (en) * | 1999-02-24 | 2000-09-08 | Nec Corp | Method and device for evaluating bipolar transisitor |
| CN101846723A (en) * | 2009-03-25 | 2010-09-29 | 普诚科技股份有限公司 | Measuring method of transconductance parameters |
-
2010
- 2010-12-07 CN CN 201010575278 patent/CN102565650B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4977371A (en) * | 1989-01-06 | 1990-12-11 | Siemens Aktiengesellschaft | Variable frequency I-V measurement system |
| JP2000241491A (en) * | 1999-02-24 | 2000-09-08 | Nec Corp | Method and device for evaluating bipolar transisitor |
| CN101846723A (en) * | 2009-03-25 | 2010-09-29 | 普诚科技股份有限公司 | Measuring method of transconductance parameters |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102830337A (en) * | 2012-08-29 | 2012-12-19 | 中国电子科技集团公司第十三研究所 | System for testing direct current performance of wide bandgap semiconductor chip |
| CN103344851A (en) * | 2013-06-24 | 2013-10-09 | 江苏博普电子科技有限责任公司 | Pulsed DC testing system and method of GaN HEMT microwave power device |
| CN103344851B (en) * | 2013-06-24 | 2015-06-17 | 江苏博普电子科技有限责任公司 | Pulsed DC testing system and method of GaN HEMT microwave power device |
| CN103913690A (en) * | 2014-04-04 | 2014-07-09 | 中国科学院微电子研究所 | Method and system for measuring frequency dispersion characteristic of transistor output resistance |
| CN106845025A (en) * | 2016-04-01 | 2017-06-13 | 电子科技大学 | The big signal statistics model modelling approach of GaN high electron mobility transistor |
| CN106845025B (en) * | 2016-04-01 | 2019-11-05 | 电子科技大学 | The big signal statistics model modelling approach of GaN high electron mobility transistor |
| CN107144775A (en) * | 2017-05-22 | 2017-09-08 | 西安电子科技大学 | A kind of measurement apparatus and method of CMOS inverter mutual conductance coefficient |
| CN107144775B (en) * | 2017-05-22 | 2020-02-21 | 西安电子科技大学 | Device and method for measuring transconductance coefficient of CMOS inverter |
| CN107703431A (en) * | 2017-09-11 | 2018-02-16 | 西安电子科技大学 | Device surface state trap measuring method based on changeable frequency pulse technique |
| CN113252987A (en) * | 2021-07-05 | 2021-08-13 | 西安众力为半导体科技有限公司 | Dynamic resistance test circuit of GaN HEMT power device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102565650B (en) | 2013-12-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102565650B (en) | Measuring system of GaN HEMT device transconductance frequency scattering characteristic and method thereof | |
| CN102338846B (en) | Method for evaluating reliability of GaN-based HEMT (High Electron Mobility Transistor) device | |
| CN102542077B (en) | Parameter extraction method of AlGaN/GaN HEMT small-signal model | |
| CN103063999B (en) | The method of De-embedding | |
| CN1873429B (en) | Method and circuit for measuring voltage, insulation resistance, and capacitance in communication line | |
| CN108710076B (en) | Dynamic on-resistance automatic extraction circuit and automatic extraction method | |
| CN107345996A (en) | FET test circuit and method of testing | |
| CN108718150B (en) | High-frequency and high-voltage dynamic conduction impedance based on AlGaN/GaN HEMT device extracts circuit and extracting method | |
| CN109580722B (en) | Grounding grid corrosion monitoring method and device based on alternating current admittance method | |
| Spro et al. | Modelling and quantification of power losses due to dynamic on-state resistance of GaN E-mode HEMT | |
| CN102879722A (en) | Volt-ampere performance testing device and method for solar array | |
| CN103728545B (en) | Evaluation method for Schottky contact reliability of GaN-based device | |
| CN105373660A (en) | Equivalent circuit-based transistor reliability representation method | |
| CN104020357B (en) | Capacitance test circuit and method of testing under a kind of Dc bias | |
| CN102435817A (en) | Measuring method for gate voltage-1/f noise curve of MOS (Metal-Oxide Semiconductor) transistor | |
| CN106940404A (en) | A kind of circuit of the Gain Automatic measurement of built-in trans-impedance amplifier | |
| CN105759194B (en) | The optimum impedance point method for rapidly positioning of semiconductor impedance test based on tuner | |
| Zhu et al. | Modeling of line impedance stabilization network impedance characteristic based on genetic algorithm | |
| CN204330892U (en) | A kind of high-frequency treatment device on resistance testing circuit | |
| CN103913690A (en) | Method and system for measuring frequency dispersion characteristic of transistor output resistance | |
| CN105158666A (en) | Method for measuring and representing trapping parameters of semiconductor device | |
| CN101459093A (en) | Method for verifying asymmetric high voltage field effect tube drifting region resistor | |
| CN107991543A (en) | The gate charge measurement circuit and its measuring method of insulated gate bipolar transistor | |
| CN103811372B (en) | The test structure of transistor and method of testing | |
| CN206618806U (en) | A kind of circuit of the Gain Automatic measurement of built-in trans-impedance amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |