CN107991543A - The gate charge measurement circuit and its measuring method of insulated gate bipolar transistor - Google Patents
The gate charge measurement circuit and its measuring method of insulated gate bipolar transistor Download PDFInfo
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- CN107991543A CN107991543A CN201711361231.5A CN201711361231A CN107991543A CN 107991543 A CN107991543 A CN 107991543A CN 201711361231 A CN201711361231 A CN 201711361231A CN 107991543 A CN107991543 A CN 107991543A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/24—Arrangements for measuring quantities of charge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The present invention is suitable for technical field of semiconductors, there is provided a kind of test of the gate charge amount of high pressure IGBT device.The gate charge measurement circuit includes control module, charging module, current detection module and electricity computing module；Control module is effective in first control signal and control charging module charges according to operating voltage to insulated gate bipolar transistor to be measured when second control signal is invalid, charging current when current detection module detection charging module charges insulated gate bipolar transistor to be measured, and charging current is fed back into electricity computing module, electricity computing module obtains insulated gate bipolar transistor to be measured from the used time during state that starts to charge up to fully open state, and the gate charge amount of insulated gate bipolar transistor to be measured is calculated according to time and charging current.The gate charge measurement circuit is realized and solves the problems, such as accurately to measure IGBT gate charge amounts.
Description
Technical field
Originally belong to invention and belong to technical field of semiconductors, more particularly to a kind of gate charge of insulated gate bipolar transistor
Measurement circuit and its measuring method.
Background technology
Since insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is by double
Pole junction transistor (Bipolar Junction Transistor, BJT) and insulating gate type field effect tube MOS form compound
Full-control type voltage driven type power semiconductor, therefore the advantages of combine both the above device, i.e., driving power is small and full
The advantages of low with pressure drop.However, since the size of gate pole (Gate) electric charge of IGBT to its dynamic characteristic (switching characteristic) and is moved
State loss (loss in switching process) has important influence, and therefore, the accurate gate charge amount for measuring IGBT is for IGBT devices
The performance optimization of part seems particularly significant.
At present, for the measurement for IGBT gate charge amounts, the prior art is generally by the electricity for measuring IGBT grids
Hold the grid voltage being in IGBT under fully on state, utilize the calculation formula of capacitance：C=Q/U, calculates and obtains IGBT grid
The pole quantity of electric charge, wherein, C is the capacitance of IGBT grids, and U is the grid voltage that IGBT is under fully on state, and Q is calculating
The IGBT gate charge amounts of acquisition.
However, since the prior art needs to measure or calculate the capacitance of its grid capacitance when measuring IGBT gate charge amounts
Value, and the parasitic capacitance that the structure of IGBT device produces can produce interference when measuring the capacitance of IGBT grids, lead to not
Go out correct capacitance, so that calculating obtained IGBT gate charges amount can also be deviated.
Described in summary, existing IGBT gate charges measuring method presence can not accurately measure IGBT gate charge amounts
Problem.
The content of the invention
It is an object of the invention to provide a kind of gate charge measurement circuit of insulated gate bipolar transistor and its survey
Amount method, it is intended to which existing IGBT gate charges measuring method presence, which exists in the prior art, in solution can not accurately measure IGBT
The problem of gate charge amount.
To achieve the above object, first aspect present invention provides a kind of gate charge of insulated gate bipolar transistor and measures
Circuit is measured, for measuring the gate charge amount of insulated gate bipolar transistor to be measured, the gate charge measurement circuit includes
Control module, charging module, current detection module and electricity computing module；
The first input end of the charging module receives operating voltage, and with the first input end of the current detection module
Connection, the control terminal of the charging module are connected with the second input terminal of the current detection module, the current detection module
Output terminal be connected with the input terminal of the electricity computing module, the first output terminal of the charging module and the control module
First input end connection, the second output terminal of the charging module and the second input terminal of the control module and described treat
The grid connection of insulated gate bipolar transistor is surveyed, the first control terminal of the control module receives first control signal, described
Second control terminal of control module receives second control signal, the output terminal of the control module and the insulated gate bipolar to be measured
First test side of the emitter of transistor npn npn and the electricity computing module connects, the insulated gate bipolar crystal to be measured
The collector of pipe is connected with the second test side of the electricity computing module；
When the first control signal is effective, and the second control signal is invalid, described in the control module control
Charging module charges according to the operating voltage to the insulated gate bipolar transistor to be measured, the current detection module
Detect the charging current when charging module charges the insulated gate bipolar transistor to be measured, and by the charging
For current feedback to the electricity computing module, the electricity computing module obtains the insulated gate bipolar transistor to be measured from opening
Used time during beginning charged state to fully open state, and treated according to calculating the time and the charging current
Survey the gate charge amount of insulated gate bipolar transistor.
Second aspect of the present invention provides a kind of gate charge measurement circuit based on above-mentioned insulated gate bipolar transistor
Measuring method, the measuring method includes：
The control module is effective in the first control signal, and when the second control signal is invalid, described in control
Charging module charges according to the operating voltage to the insulated gate bipolar transistor to be measured.
The current detection module detects the charging module and charges to the insulated gate bipolar transistor to be measured
When charging current, and the charging current is fed back into the electricity computing module.
The electricity computing module obtains the insulated gate bipolar transistor to be measured from the state that starts to charge up to opening completely
Open used time during state, and the insulated gate bipolar crystal to be measured is calculated according to the time and the charging current
The gate charge amount of pipe.
The beneficial effect of the gate charge measurement circuit of insulated gate bipolar transistor provided by the invention is, passes through
Control module control charging module charges to insulated gate bipolar transistor to be measured, and it is double that current detection module detects insulated gate to be measured
The charging current of bipolar transistor, and fed back to electricity computing module, electricity computing module obtains insulated gate bipolar to be measured
Transistor npn npn is calculated from the used time during state that starts to charge up to fully open state, and then according to time and charging current
The gate charge amount of insulated gate bipolar transistor to be measured so that the grid electricity of the insulated gate bipolar transistor to be measured calculated
Lotus amount improves the gate charge amount of insulated gate bipolar transistor from the influence of insulated gate bipolar transistor structure to be measured
Accuracy of measurement, solve and existing IGBT gate charges measuring method exists in the prior art exist and can not accurately measure
The problem of IGBT gate charge amounts.
Brief description of the drawings
To describe the technical solutions in the embodiments of the present invention more clearly, below will be to embodiment or description of the prior art
Needed in attached drawing be briefly described, it should be apparent that, drawings in the following description be only the present invention some
Embodiment, for those of ordinary skill in the art, without having to pay creative labor, can also be according to these
Attached drawing obtains other attached drawings.
Fig. 1 is the mould of the gate charge measurement circuit for the insulated gate bipolar transistor that one embodiment of the invention is provided
Block structure schematic diagram；
Fig. 2 is the electricity of the gate charge measurement circuit for the insulated gate bipolar transistor that one embodiment of the invention is provided
Line structure schematic diagram；
Fig. 3 is the survey of the gate charge measurement circuit for the insulated gate bipolar transistor that one embodiment of the invention is provided
The measurement procedure schematic diagram of amount method.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, with reference to the accompanying drawings and embodiments, it is right
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
In order to illustrate technical solutions according to the invention, illustrated below by specific embodiment.
Fig. 1 shows the gate charge measurement circuit for the insulated gate bipolar transistor that the embodiment of the present invention is provided
Modular structure, for convenience of description, only shows part related to the present embodiment, details are as follows：
As shown in Figure 1, the gate charge measurement circuit that the embodiment of the present invention is provided, for for measuring insulation to be measured
The gate charge amount of grid bipolar transistor (Insulated Gate Bipolar Transistor, IGBT), the gate charge
Measurement circuit includes control module 200, charging module 100, current detection module 300 and electricity computing module 400.
Wherein, the first input end of charging module 100 receives operating voltage, and defeated with the first of current detection module 300
Enter end connection, the control terminal of charging module 100 is connected with the second input terminal of current detection module 300, current detection module 300
Output terminal be connected with the input terminal of electricity computing module 400, the first output terminal of charging module 100 and control module 200
First input end connects, the second output terminal of charging module 100 and the second input terminal of control module 200 and IGBT's to be measured
Grid connects, and the first control terminal of control module 200 receives first control signal, and the second control terminal of control module 200 receives
Second control signal, the first inspection of the output terminal of control module 200 and the emitter and electricity computing module 400 of IGBT to be measured
End connection is surveyed, the collector of IGBT to be measured is connected with the second test side of electricity computing module 400.
Specifically, when first control signal is effective, and second control signal is invalid, the control charging mould of control module 200
Block 100 charges according to operating voltage to IGBT absolutely to be measured, and current detection module 300 detects charging module 100 to be measured
Charging current when IGBT is charged, and charging current is fed back into electricity computing module 400, electricity computing module 400 obtains
IGBT to be measured is taken from the used time during state that starts to charge up to fully open state, and is calculated according to time and charging current
The gate charge amount of IGBT to be measured.
In addition, when first control signal is invalid, and second control signal is effective, control module 200 controls charging module
100 stop charging to IGBT to be measured, and IGBT to be measured starts to discharge at this time, so that IGBT to be measured is turned off, with for measurement next time
Prepare.
It should be noted that in embodiments of the present invention, first control signal and second control signal can be oscillographs
The sine wave signal of square-wave signal or the controller output of output, is not particularly limited herein；Signal effectively refers to
Signal is in high level, and invalidating signal refers to that signal is in low level, that is to say, that first control signal effectively refers to
One control signal is high level, such as 5V, and second control signal is invalid to refer to that second control signal is low level, such as 0V.
In addition, IGBT to be measured start to charge up state refer to charging module 100 start to IGBT to be measured charge when it is to be measured
IGBT state in which, fully open state refer to that IGBT to be measured has been according to the charging voltage that charging module 100 exports
State during full open.
In the present embodiment, the gate charge measurement circuit of the insulated gate bipolar transistor is by passing through control module
Control charging module charges to insulated gate bipolar transistor to be measured, and current detection module detects insulated gate bipolar crystal to be measured
The charging current of pipe, and fed back to electricity computing module, electricity computing module obtains insulated gate bipolar transistor to be measured
Insulation to be measured is calculated from the used time during state that starts to charge up to fully open state, and then according to time and charging current
The gate charge amount of grid bipolar transistor so that the gate charge amount of the insulated gate bipolar transistor to be measured calculated from
The influence of insulated gate bipolar transistor structure to be measured, the measurement for improving the gate charge amount of insulated gate bipolar transistor are accurate
Exactness.
Further, as a preferred embodiment of the invention, as shown in Fig. 2, the grid that the embodiment of the present invention is provided
Quantity of electric charge measuring circuit further includes current limliting module 500.
Wherein, the first end of current limliting module 500 is connected with the second test side of electricity computing module 400, current limliting module 500
Second end be connected with the collector of IGBT to be measured.
Specifically, current limliting module 500 carries out current limliting to electric currents of the IGBT to be measured in turn on process.
Further, as a preferred embodiment of the invention, as shown in Fig. 2, current limliting module 500 includes the 5th resistance
The first end of R5, the 5th resistance R5 are limited the first end of flow module 500, and the second end of the 5th resistance R5 is limited flow module 500
Second end.
It should be noted that in embodiments of the present invention, current limliting module 500 can also be that multiple resistance are in series or in parallel
Composition, herein only by taking the structure of the 5th resistance R5 as an example, and is not particularly limited.
Further, as a preferred embodiment of the invention, as shown in Fig. 2, the grid that the embodiment of the present invention is provided
Quantity of electric charge measuring circuit further includes filter module 600.
Wherein, the first end of filter module 600 is connected with the second test side of electricity computing module 400, filter module 600
Second end be connected with the first test side of electricity computing module 400；
Specifically, filter module 600 is filtered place to noise of the electricity computing module 400 during the time is obtained
Reason.
Further, as a preferred embodiment of the invention, as shown in Fig. 2, filter module 600 includes filter capacitor
The first end of C1, filter capacitor C1 are the first end of filter module 600, and the second end of filter capacitor C1 is filter module 600
Second end.
It should be noted that in embodiments of the present invention, filter module 600 can also be that multiple capacitances are in series or in parallel
Form, herein only by taking the structure of filter capacitor C1 as an example, and be not particularly limited.
As shown in Fig. 2, charging module 100 in the gate charge measurement circuit that the embodiment of the present invention is provided includes the
One switch element Q1, diode D, first resistor R1 and second resistance R2.
Wherein, the second end of the anode of diode D and first resistor R1 connect the first input to form charging module 100 altogether
End, the control terminal of the cathode of diode D, the first end of second resistance R2 and first switching element Q1 connect to form charging module altogether
100 control terminal, the second end of first resistor R1 are connected with the input terminal of first switch unit Q1, the second end of second resistance R2
For the first output terminal of charging module 100, the output terminal of first switching element Q1 is the second output terminal of charging module 100.
It should be noted that in embodiments of the present invention, first switching element Q1 is PNP type triode, three pole of positive-negative-positive
Base stage, emitter and the collector of pipe are respectively control terminal, input terminal and the output terminal of first switching element Q1；Certainly originally
Field technology personnel are it is understood that first switching element Q1 can also use the realization of other switching tubes, such as PMOS crystal
Pipe.
As shown in Fig. 2, control module 200 in the gate charge measurement circuit that the embodiment of the present invention is provided includes the
Three resistance R3, the 4th resistance R4, second switch element Q2 and the 3rd switch element Q3.
Wherein, the first input end of the input terminal of second switch element Q2 module 200 in order to control, the 3rd switch element Q3's
Second input terminal of input terminal module 200 in order to control, the control terminal of second switch element Q2 connect with the first end of 3rd resistor R3
Connect, the first control terminal of the second end of 3rd resistor R3 module 200 in order to control, the control terminal of the 3rd switch element Q3 and the 4th electricity
Hinder the first end connection of R4, the second control terminal of the second end of the 4th resistance R4 module 200 in order to control, second switch element Q2's
The output terminal of output terminal and the 3rd switch element Q3 connect the output terminal to form control module 200 altogether.
It should be noted that in embodiments of the present invention, second switch element Q2 and the 3rd switch element Q3 are NPN type
Triode, base stage, collector and the emitter of the NPN type triode are respectively second switch element Q2 and the 3rd switch element
Control terminal, input terminal and the output terminal of Q3；Certainly it will be appreciated by persons skilled in the art that second switch element Q2 and the
Three switch element Q3 can also use other switching tubes to realize, such as nmos pass transistor.
Further, as an of the invention preferred embodiment, electricity computing module 400 is oscillograph, the of oscillograph
One input terminal and the second input terminal are respectively that the first test side of electricity computing module 400 is connected with the second test side, oscillograph
The 3rd input terminal be electricity computing module 400 input terminal.
When it is implemented, since oscillograph is connected to the collector and emitter of IGBT to be measured, oscillograph can be treated
Voltage waveform when surveying conducting state and the conducting of IGBT is effectively detected, therefore oscillograph can be to be measured by what is detected
The voltage waveform of IBGT determines the time for starting to charge up state of IGBT to be measured, and determines IGBT fully open states to be measured
Time, and determine IGBT to be measured from the used time during state that starts to charge up to fully open state according to both time differences
t。
Further, oscillograph can to IGBT to be measured from the state that starts to charge up to fully open state when it is used when
Between take multiple measurements, and carry out mean value calculation to repeatedly measuring obtained time, and time t is obtained according to result of calculation.
In the present embodiment, oscillograph by IGBT to be measured from the state that starts to charge up to fully open state when used
Time take multiple measurements, and the time to repeatedly measuring carry out average value processing, to get correct time t, and then make
Oscillograph is obtained when calculating the gate charge amount of IGBT to be measured according to time t, can further improve the gate charge of IGBT to be measured
Measure accuracy of measurement.
Further, set as a preferred embodiment of the invention, current detection module 300 using existing voltage detecting
It is standby to realize, such as oscillograph.Charging of the voltage detection device when detecting that charging module 100 charges IGBT to be measured
After voltage, according to the relation between resistance, voltage and current three, obtained and filled with preset resistive value using the charging voltage got
Charging current when electric module 100 charges IGBT to be measured.
It should be noted that in embodiments of the present invention, oscillograph and electricity as current detection module 300 calculate mould
The oscillograph of block 400 can be same oscillograph, and two different oscillographs can also be used to realize, be not limited herein.
When further, current detection module 300 can charge IGBT to be measured with repeated detection charging module 100
Charging voltage, and multiple charging voltages to detecting carry out average value processing, to obtain charging voltage average value, and according to charging
Average voltage obtains charging current with preset resistive value.
In the present embodiment, current detection module 300 charges IGBT to be measured by repeated detection charging module 100
When charging voltage, and to multiple charging voltages carry out average value processing, to obtain charging voltage average value, and according to charging voltage
Average value obtains charging current with preset resistive value, to get accurate electric current, so that electricity computing module 400 is in basis
During the gate charge amount of Current calculation IGBT to be measured, measurement accuracy can be effectively improved.
The operation principle of the gate charge measurement circuit of the present invention is said by taking the circuit shown in Fig. 2 as an example below
Bright, details are as follows：
If as shown in Fig. 2, using oscillograph output control signal, when work of the power supply to VIN ends output 12V~17V
During voltage, while the signal output part of oscillograph is 5V to the level signal that HIN ends export, and LIN ends are 0V, and to P ends and N
When adding certain voltage between end, second switch element Q2 is turned at this time, the 3rd switch element Q cut-offs.As second switch element Q2
After conducting, diode D, second resistance R2 and second switch element Q2 form path, the base voltage of first switching element Q1
Drawn high with second resistance R2 voltages, first switching element Q1 conductings, and started to charge up to IGBT to be measured.
When IGBT to be measured is started to charge up, on the one hand using the charging interval t of oscilloscope measurement IGBT to be measured, i.e., using showing
Ripple device detects time t of the charging beginning state of IGBT to be measured untill surveying IGBT to be measured and fully opening charging, then passes through
Switching makes the signal output part of oscillograph to HIN ends outputs level signals be 0V, and LIN ends outputs level signals are 5V so that
The gate discharge of IGBT to be measured, IGBT shut-offs to be measured, charging interval are measured.
The detection of another aspect voltage detection module 300 measures the charging current i of IGBT to be measured.Due to first switching element Q1
Amplification factor it is very big, therefore, first switching element Q1 base stages produce electric current can ignore not relative to the electric current of collector
Meter, therefore first resistor R1 can be flowed through according to the voltage at first resistor R1 both ends and the computing the resistor value of first resistor R1, first is opened
The electric current i of element Q1 is closed, electric current i is the charging current of IGBT to be measured.Voltage and two poles due to first resistor R1 both ends
The voltage at pipe D both ends is equal, therefore, can be used the voltage at oscillograph detection diode D both ends, and according to the voltage detected with
The ratio of first resistor R1 resistance values obtains the charging current i of IGBT to be measured, and charging current i is fed back to showing for electricity calculating
Ripple device.
After the charging current i for the IGBT to be measured that the oscillograph for carrying out electricity calculating receives feedback, according to formula q=
It can calculate the gate charge amount of measurement IGBT, and wherein q is the gate charge amount for the measurement IGBT being calculated.
In the present embodiment, the gate charge measurement circuit of insulated gate bipolar transistor provided by the invention by
Second switch element Q2 is turned on, and during the 3rd switch element Q3 cut-offs, control first switching element Q1 charges to IGBT to be measured, makes
Obtain voltage detection device and detect charging currents of the IGBT to be measured in charging process, while oscillograph obtains IGBT to be measured from the beginning of
Charged state and then calculates according to the time of acquisition and the product of electric current the grid of the IGBT to be measured to the time of fully open state
The pole quantity of electric charge so that during the gate charge amount of the IGBT to be measured is calculated, measured gate charge amount is from IGBT
Structure influence, and then improve measurement accuracy, and the structure of the measuring circuit is simple, cost is low, is insulated gate bipolar
The product design of transistor and the design of interlock circuit provide great convenience.
Further, Fig. 3 shows the gate charge amount for the insulated gate bipolar transistor that the embodiment of the present invention is provided
The testing process of the measuring method of measuring circuit, the measuring method include：
Step S10：Control module is effective in first control signal, and when second control signal is invalid, controls charging module
Charged according to operating voltage to insulated gate bipolar transistor to be measured.
Step S20：Current detection module detection charging module fills when charging to insulated gate bipolar transistor row to be measured
Electric current, and charging current is fed back into electricity computing module.
Wherein, in embodiments of the present invention, filled as a preferred embodiment of the invention, current detection module repeated detection
Charging voltage when electric module charges insulated gate bipolar transistor to be measured, and multiple charging voltages to detecting into
Row average value processing, to obtain charging voltage average value, and obtains charging current according to charging voltage average value and preset resistive value.
Step S30：Electricity computing module obtains insulated gate bipolar transistor to be measured from the state that starts to charge up to opening completely
Open used time during state, and the gate charge of insulated gate bipolar transistor to be measured is calculated according to time and charging current
Amount.
Wherein, in embodiments of the present invention, as a preferred embodiment of the invention, electricity computing module is to insulation to be measured
Grid bipolar transistor was taken multiple measurements from the used time during state that starts to charge up to fully open state, and to multiple
Obtained time progress mean value calculation is measured, and the time is obtained according to result of calculation.
It should be noted that in embodiments of the present invention, the gate charge amount of the insulated gate bipolar transistor shown in Fig. 3
Measuring method is that the gate charge measurement circuit based on the insulated gate bipolar transistor shown in Fig. 1 and Fig. 2 is realized, because
This, the concrete operating principle on the gate charge measuring method of Fig. 3 insulated gate bipolar transistors provided refers to Fig. 1
With the specific descriptions process of the gate charge measurement circuit of the insulated gate bipolar transistor shown in Fig. 2, details are not described herein.
The measuring method of the gate charge measurement circuit of insulated gate bipolar transistor provided in an embodiment of the present invention, leads to
The charging current that detects insulated gate bipolar transistor to be measured and measurement insulated gate bipolar transistor to be measured are crossed from starting to charge up
Used time during state to fully open state, and can be calculated according to the triadic relation of time, electric current and the quantity of electric charge
The gate charge amount of insulated gate bipolar transistor, its measurement data is accurate, testing process is simple and efficient, financial cost is low, solution
There is the problem of can not accurately measuring IGBT gate charge amounts in existing IGBT gate charges measuring method of having determined.
Above content is that a further detailed description of the present invention in conjunction with specific preferred embodiments, it is impossible to is assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
Some equivalent substitutes or obvious modification are made on the premise of not departing from present inventive concept, and performance or purposes are identical, all should
It is considered as belonging to the scope of patent protection that the present invention is determined by the claims submitted.
Claims (10)
- A kind of 1. gate charge measurement circuit of insulated gate bipolar transistor, for measuring insulated gate bipolar crystal to be measured The gate charge amount of pipe, it is characterised in that the gate charge measurement circuit includes control module, charging module, electric current inspection Survey module and electricity computing module；The first input end of the charging module receives operating voltage, and connects with the first input end of the current detection module Connect, the control terminal of the charging module is connected with the second input terminal of the current detection module, the current detection module Output terminal is connected with the input terminal of the electricity computing module, the first output terminal and the control module of the charging module First input end connects, the second output terminal of the charging module and the second input terminal of the control module and described to be measured The grid connection of insulated gate bipolar transistor, the first control terminal of the control module receive first control signal, the control Second control terminal of molding block receives second control signal, the output terminal of the control module and the insulated gate bipolar to be measured First test side of the emitter of transistor and the electricity computing module connects, the insulated gate bipolar transistor to be measured Collector be connected with the second test side of the electricity computing module；When the first control signal is effective, and the second control signal is invalid, the control module controls the charging Module charges according to the operating voltage to the insulated gate bipolar transistor to be measured, the current detection module detection The charging current when charging module charges the insulated gate bipolar transistor to be measured, and by the charging current Feed back to the electricity computing module, the electricity computing module obtains the insulated gate bipolar transistor to be measured from starting to fill Used time during electricity condition to fully open state, and it is described to be measured exhausted according to the time and charging current calculating The gate charge amount of edge grid bipolar transistor.
- 2. gate charge measurement circuit according to claim 1, it is characterised in that the current detection module is repeatedly examined The charging voltage when charging module charges the insulated gate bipolar transistor to be measured is surveyed, and it is more to what is detected A charging voltage carries out average value processing, to obtain charging voltage average value, and according to the charging voltage average value and pre- handicapping Value obtains the charging current.
- 3. gate charge measurement circuit according to claim 1 or 2, it is characterised in that the electricity computing module pair The used time carries out multiple when the insulated gate bipolar transistor to be measured is from the state that starts to charge up to fully open state Measurement, and mean value calculation is carried out to repeatedly measuring the obtained time, and the time is obtained according to result of calculation.
- 4. gate charge measurement circuit as claimed in claim 1, it is characterised in that the charging module includes first switch Element, diode, first resistor and second resistance；The anode of the diode and the second end of the first resistor meet the first input end to form the charging module, institute altogether The control terminal for stating the cathode of diode, the first end of the second resistance and the first switching element connects to form the charging altogether The control terminal of module, the second end of the first resistor are connected with the input terminal of the first switching element, the second resistance Second end be the charging module the first output terminal, the output terminal of the first switching element is the of the charging module Two output terminals.
- 5. gate charge measurement circuit as claimed in claim 1, it is characterised in that the control module includes the 3rd electricity Resistance, the 4th resistance, second switch element and the 3rd switch element；The input terminal of the second switch element be the control module first input end, the input of the 3rd switch element The second input terminal for the control module is held, the control terminal of the second switch element connects with the first end of the 3rd resistor Connect, the second end of the 3rd resistor is the first control terminal of the control module, the control terminal of the 3rd switch element with The first end connection of 4th resistance, the second end of the 4th resistance is the second control terminal of the control module, described The output terminal of second switch element and the output terminal of the 3rd switch element connect the output terminal to form the control module altogether.
- 6. gate charge measurement circuit as claimed in claim 1, it is characterised in that the electricity computing module is oscillography Device, the first input end of the oscillograph and the second input terminal are respectively the first test side and second of the electricity computing module Test side connects, and the 3rd input terminal of the oscillograph is the input terminal of the electricity computing module.
- 7. gate charge measurement circuit as claimed in claim 1, it is characterised in that the gate charge measurement circuit is also Including current limliting module；The first end of the current limliting module is connected with the second test side of the electricity computing module, and the second of the current limliting module End is connected with the collector of the insulated gate bipolar transistor to be measured；The current limliting module carries out current limliting to electric current of the insulated gate bipolar transistor to be measured in turn on process.
- A kind of 8. measurement side of the gate charge measurement circuit of insulated gate bipolar transistor based on described in claim 1 Method, it is characterised in that the measuring method includes：The control module is effective in the first control signal, and when the second control signal is invalid, controls the charging Module charges according to the operating voltage to the insulated gate bipolar transistor to be measured；The current detection module is detected when the charging module charges the insulated gate bipolar transistor to be measured Charging current, and the charging current is fed back into the electricity computing module；The electricity computing module obtains the insulated gate bipolar transistor to be measured from the state that starts to charge up to fully opening shape Used time during state, and the insulated gate bipolar transistor to be measured is calculated according to the time and the charging current Gate charge amount.
- 9. measuring method according to claim 8, it is characterised in that the current detection module detects the charging module Charging current when charging to the insulated gate bipolar transistor to be measured includes：Charging module charges the insulated gate bipolar transistor to be measured described in the current detection module repeated detection When charging voltage, and multiple charging voltages to detecting carry out average value processing, to obtain charging voltage average value, and according to The charging voltage average value obtains the charging current with preset resistive value.
- 10. measuring method according to claim 8 or claim 9, it is characterised in that the electricity computing module obtains described to be measured Insulated gate bipolar transistor included from the used time during state that starts to charge up to fully open state：The electricity computing module is to the insulated gate bipolar transistor to be measured from state is started to charge up to fully open state When the used time take multiple measurements, and carry out mean value calculation to repeatedly measuring obtained time, and tie according to calculating Fruit obtains the time.
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| CN201711361231.5A CN107991543B (en) | 2017-12-18 | 2017-12-18 | Gate charge quantity measuring circuit and method of insulated gate bipolar transistor |
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