CN107991543B - Gate charge quantity measuring circuit and method of insulated gate bipolar transistor - Google Patents
Gate charge quantity measuring circuit and method of insulated gate bipolar transistor Download PDFInfo
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- CN107991543B CN107991543B CN201711361231.5A CN201711361231A CN107991543B CN 107991543 B CN107991543 B CN 107991543B CN 201711361231 A CN201711361231 A CN 201711361231A CN 107991543 B CN107991543 B CN 107991543B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/24—Arrangements for measuring quantities of charge
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The invention is applicable to the technical field of semiconductors, and provides a gate charge amount measuring circuit and a gate charge amount measuring method of an insulated gate bipolar transistor. The grid charge quantity measuring circuit comprises a control module, a charging module, a current detection module and an electric quantity calculation module; the control module controls the charging module to charge the insulated gate bipolar transistor to be tested according to the working voltage when the first control signal is effective and the second control signal is not effective, the current detection module detects the charging current when the charging module charges the insulated gate bipolar transistor to be tested, the charging current is fed back to the electric quantity calculation module, the electric quantity calculation module obtains the time used when the insulated gate bipolar transistor to be tested is in a state from a starting charging state to a full opening state, and the grid charge quantity of the insulated gate bipolar transistor to be tested is calculated according to the time and the charging current. The gate charge quantity measuring circuit solves the problem of accurately measuring the gate charge quantity of the IGBT.
Description
Technical Field
The invention belongs to the technical field of semiconductors, and particularly relates to a gate charge quantity measuring circuit and a gate charge quantity measuring method of an insulated gate bipolar transistor.
Background
The insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) is a compound full-control voltage-driven power semiconductor device which consists of a bipolar junction transistor (Bipolar Junction Transistor, BJT) and an insulated gate field effect transistor MOS, so that the advantages of the two devices are combined, namely, the advantages of small driving power and reduced saturation voltage are combined. However, since the magnitude of the Gate charge of an IGBT has an important influence on its dynamic characteristics (switching characteristics) and dynamic losses (losses during switching), accurate measurement of the Gate charge of an IGBT is important for performance optimization of an IGBT device.
Currently, for measuring the amount of charge of the gate of an IGBT, in the prior art, the capacitance of the gate of the IGBT and the gate voltage of the IGBT in a fully on state are generally measured, and a calculation formula of the capacitance is utilized: c=q/U, where C is the capacitance value of the IGBT gate, U is the gate voltage of the IGBT in the fully on state, and Q is the calculated IGBT gate charge.
However, in the prior art, when the amount of the electric charge of the IGBT gate is measured, the capacitance value of the gate capacitor of the IGBT needs to be measured or calculated, and the parasitic capacitance generated by the structure of the IGBT device may interfere when the capacitance of the IGBT gate is measured, so that the correct capacitance value cannot be obtained, and the calculated amount of the electric charge of the IGBT gate may also deviate.
In summary, the existing IGBT gate charge amount measurement method has a problem that the IGBT gate charge amount cannot be accurately measured.
Disclosure of Invention
The invention aims to provide a gate charge amount measuring circuit and a gate charge amount measuring method of an insulated gate bipolar transistor, and aims to solve the problem that the existing IGBT gate charge amount measuring method cannot accurately measure the IGBT gate charge amount in the prior art.
In order to achieve the above object, a first aspect of the present invention provides a gate charge amount measurement circuit of an insulated gate bipolar transistor, configured to measure a gate charge amount of the insulated gate bipolar transistor to be measured, where the gate charge amount measurement circuit includes a control module, a charging module, a current detection module, and an electric quantity calculation module;
the first input end of the charging module is connected with the working voltage and the first input end of the current detection module, the control end of the charging module is connected with the second input end of the current detection module, the output end of the current detection module is connected with the input end of the electric quantity calculation module, the first output end of the charging module is connected with the first input end of the control module, the second output end of the charging module is connected with the second input end of the control module and the grid electrode of the insulated gate bipolar transistor to be detected, the first control end of the control module receives a first control signal, the second control end of the control module receives a second control signal, the output end of the control module is connected with the emitter electrode of the insulated gate bipolar transistor to be detected and the first detection end of the electric quantity calculation module, and the collector electrode of the insulated gate bipolar transistor to be detected is connected with the second detection end of the electric quantity calculation module;
when the first control signal is effective and the second control signal is not effective, the control module controls the charging module to charge the insulated gate bipolar transistor to be tested according to the working voltage, the current detection module detects charging current when the charging module charges the insulated gate bipolar transistor to be tested and feeds the charging current back to the electric quantity calculation module, and the electric quantity calculation module obtains time used when the insulated gate bipolar transistor to be tested starts to be charged to be in a full-on state and calculates gate charge quantity of the insulated gate bipolar transistor to be tested according to the time and the charging current.
The second aspect of the present invention provides a measurement method of a gate charge amount measurement circuit based on the insulated gate bipolar transistor, the measurement method comprising:
and when the first control signal is effective and the second control signal is ineffective, the control module controls the charging module to charge the insulated gate bipolar transistor to be tested according to the working voltage.
The current detection module detects charging current when the charging module charges the insulated gate bipolar transistor to be detected, and feeds the charging current back to the electric quantity calculation module.
The electric quantity calculation module obtains the time used by the insulated gate bipolar transistor to be measured from the starting state to the full-on state, and calculates the grid electric quantity of the insulated gate bipolar transistor to be measured according to the time and the charging current.
The insulated gate bipolar transistor gate charge amount measuring circuit provided by the invention has the beneficial effects that the control module controls the charging module to charge the insulated gate bipolar transistor to be measured, the current detection module detects the charging current of the insulated gate bipolar transistor to be measured and feeds back the charging current to the electric quantity calculation module, the electric quantity calculation module obtains the time used when the insulated gate bipolar transistor to be measured starts to be in a fully-opened state from the charging state, and further the gate charge amount of the insulated gate bipolar transistor to be measured is calculated according to the time and the charging current, so that the calculated gate charge amount of the insulated gate bipolar transistor to be measured is not influenced by the structure of the insulated gate bipolar transistor to be measured, the measurement accuracy of the gate charge amount of the insulated gate bipolar transistor is improved, and the problem that the existing IGBT gate charge amount measuring method in the prior art cannot accurately measure the gate charge amount of the IGBT is solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the embodiments or the description of the prior art will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic block diagram of a gate charge amount measurement circuit of an insulated gate bipolar transistor according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a gate charge amount measurement circuit of an insulated gate bipolar transistor according to an embodiment of the present invention;
fig. 3 is a measurement flow chart of a measurement method of a gate charge amount measurement circuit of an insulated gate bipolar transistor according to an embodiment of the invention.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
In order to illustrate the technical scheme of the invention, the following description is made by specific examples.
Fig. 1 shows a block structure of a gate charge amount measurement circuit of an insulated gate bipolar transistor according to an embodiment of the present invention, and for convenience of explanation, only a portion related to the embodiment is shown, and the details are as follows:
as shown in fig. 1, the gate charge amount measurement circuit provided by the embodiment of the invention is used for measuring the gate charge amount of an insulated gate bipolar transistor (Insulated Gate Bipolar Transistor, IGBT) to be measured, and the gate charge amount measurement circuit includes a control module 200, a charging module 100, a current detection module 300, and an electric quantity calculation module 400.
The first input end of the charging module 100 receives the working voltage and is connected with the first input end of the current detection module 300, the control end of the charging module 100 is connected with the second input end of the current detection module 300, the output end of the current detection module 300 is connected with the input end of the electric quantity calculation module 400, the first output end of the charging module 100 is connected with the first input end of the control module 200, the second output end of the charging module 100 is connected with the second input end of the control module 200 and the grid electrode of the IGBT to be detected, the first control end of the control module 200 receives the first control signal, the second control end of the control module 200 receives the second control signal, the output end of the control module 200 is connected with the emitter of the IGBT to be detected and the first detection end of the electric quantity calculation module 400, and the collector of the IGBT to be detected is connected with the second detection end of the electric quantity calculation module 400.
Specifically, when the first control signal is valid and the second control signal is invalid, the control module 200 controls the charging module 100 to charge the insulated IGBT to be tested according to the working voltage, the current detection module 300 detects the charging current when the charging module 100 charges the insulated IGBT to be tested, and feeds back the charging current to the electric quantity calculation module 400, and the electric quantity calculation module 400 obtains the time used when the insulated IGBT to be tested starts to be charged to be in a full-on state, and calculates the gate charge quantity of the insulated IGBT to be tested according to the time and the charging current.
In addition, when the first control signal is invalid and the second control signal is valid, the control module 200 controls the charging module 100 to stop charging the IGBT to be tested, and at this time, the IGBT to be tested starts discharging, so that the IGBT to be tested is turned off to prepare for the next measurement.
It should be noted that, in the embodiment of the present invention, the first control signal and the second control signal may be square wave signals output by an oscilloscope, or sine wave signals output by a controller, which is not limited herein; signal valid means that the signal is at high level, signal invalid means that the signal is at low level, that is, the first control signal valid means that the first control signal is at high level, for example, 5V, and the second control signal invalid means that the second control signal is at low level, for example, 0V.
In addition, the start charging state of the IGBT to be tested refers to a state in which the IGBT to be tested is in when the charging module 100 starts charging the IGBT to be tested, and the fully on state refers to a state in which the IGBT to be tested is in a fully on state according to the charging voltage output by the charging module 100.
In this embodiment, the gate charge amount measurement circuit of the insulated gate bipolar transistor charges the insulated gate bipolar transistor to be measured by controlling the charging module through the control module, the current detection module detects the charging current of the insulated gate bipolar transistor to be measured and feeds back to the electric quantity calculation module, and the electric quantity calculation module obtains the time used when the insulated gate bipolar transistor to be measured starts to be in a fully-opened state from the charging state, and further calculates the gate charge amount of the insulated gate bipolar transistor to be measured according to the time and the charging current, so that the calculated gate charge amount of the insulated gate bipolar transistor to be measured is not influenced by the structure of the insulated gate bipolar transistor to be measured, and the measurement accuracy of the gate charge amount of the insulated gate bipolar transistor to be measured is improved.
Further, as a preferred embodiment of the present invention, as shown in fig. 2, the gate charge amount measurement circuit provided in the embodiment of the present invention further includes a current limiting module 500.
The first end of the current limiting module 500 is connected with the second detection end of the electric quantity calculating module 400, and the second end of the current limiting module 500 is connected with the collector of the IGBT to be tested.
Specifically, the current limiting module 500 limits the current of the IGBT to be tested in the conducting process.
Further, as shown in fig. 2, the current limiting module 500 includes a fifth resistor R5, wherein a first end of the fifth resistor R5 is a first end of the current limiting module 500, and a second end of the fifth resistor R5 is a second end of the current limiting module 500.
It should be noted that, in the embodiment of the present invention, the current limiting module 500 may also be formed by connecting a plurality of resistors in series or in parallel, and the structure of the fifth resistor R5 is only taken as an example and is not limited in particular.
Further, as a preferred embodiment of the present invention, as shown in fig. 2, the gate charge amount measurement circuit provided in the embodiment of the present invention further includes a filtering module 600.
The first end of the filtering module 600 is connected with the second detection end of the electric quantity calculating module 400, and the second end of the filtering module 600 is connected with the first detection end of the electric quantity calculating module 400;
specifically, the filtering module 600 performs filtering processing on noise during the acquisition time of the power calculation module 400.
Further, as shown in fig. 2, the filter module 600 includes a filter capacitor C1, wherein a first end of the filter capacitor C1 is a first end of the filter module 600, and a second end of the filter capacitor C1 is a second end of the filter module 600.
It should be noted that, in the embodiment of the present invention, the filter module 600 may also be configured by a plurality of capacitors connected in series or in parallel, and the structure of the filter capacitor C1 is taken as an example and not limited to the specific example.
As shown in fig. 2, the charging module 100 in the gate charge amount measurement circuit according to the embodiment of the invention includes a first switching element Q1, a diode D, a first resistor R1 and a second resistor R2.
The anode of the diode D and the second end of the first resistor R1 are commonly connected to form a first input end of the charging module 100, the cathode of the diode D, the first end of the second resistor R2 and the control end of the first switching element Q1 are commonly connected to form a control end of the charging module 100, the second end of the first resistor R1 is connected to the input end of the first switching element Q1, the second end of the second resistor R2 is a first output end of the charging module 100, and the output end of the first switching element Q1 is a second output end of the charging module 100.
It should be noted that, in the embodiment of the present invention, the first switching element Q1 is a PNP triode, and the base, emitter and collector of the PNP triode are the control terminal, input terminal and output terminal of the first switching element Q1 respectively; of course, it will be appreciated by those skilled in the art that the first switching element Q1 may also be implemented using other switching transistors, such as PMOS transistors.
As shown in fig. 2, the control module 200 in the gate charge amount measurement circuit according to the embodiment of the invention includes a third resistor R3, a fourth resistor R4, a second switching element Q2 and a third switching element Q3.
The input end of the second switching element Q2 is a first input end of the control module 200, the input end of the third switching element Q3 is a second input end of the control module 200, the control end of the second switching element Q2 is connected with the first end of the third resistor R3, the second end of the third resistor R3 is a first control end of the control module 200, the control end of the third switching element Q3 is connected with the first end of the fourth resistor R4, the second end of the fourth resistor R4 is a second control end of the control module 200, and the output end of the second switching element Q2 and the output end of the third switching element Q3 are commonly connected to form an output end of the control module 200.
It should be noted that, in the embodiment of the present invention, the second switching element Q2 and the third switching element Q3 are NPN transistors, and the base, the collector, and the emitter of the NPN transistors are control ends, input ends, and output ends of the second switching element Q2 and the third switching element Q3, respectively; of course, it will be understood by those skilled in the art that the second switching element Q2 and the third switching element Q3 may be implemented by other switching transistors, such as NMOS transistors.
Further, as a preferred embodiment of the present invention, the power calculation module 400 is an oscilloscope, the first input end and the second input end of the oscilloscope are the first detection end and the second detection end of the power calculation module 400 respectively, and the third input end of the oscilloscope is the input end of the power calculation module 400.
In the implementation, since the oscilloscope is connected to the collector and the emitter of the IGBT to be tested, the oscilloscope can effectively detect the on state of the IGBT to be tested and the voltage waveform during the on, so the oscilloscope can determine the time of starting the charge state of the IGBT to be tested and the time of determining the complete on state of the IGBT to be tested according to the detected voltage waveform of the IBGT to be tested, and determine the time t used when the IGBT to be tested starts the charge state to the complete on state according to the time difference between the two.
Furthermore, the oscilloscope can measure the time used by the IGBT to be tested from the starting state to the complete opening state for multiple times, calculate the average value of the time obtained by the multiple times of measurement, and acquire the time t according to the calculation result.
In this embodiment, the oscilloscope measures the time used when the IGBT to be tested starts to be in the charging state to be in the full-on state for multiple times, and performs average processing on the measured time for multiple times, so as to obtain an accurate time t, so that the accuracy of measuring the gate charge amount of the IGBT to be tested can be further improved when the oscilloscope calculates the gate charge amount of the IGBT to be tested according to the time t.
Further, as a preferred embodiment of the present invention, the current detection module 300 is implemented using an existing voltage detection device, such as an oscilloscope. After detecting the charging voltage of the charging module 100 when the IGBT to be tested is charged, the voltage detection device obtains the charging current of the charging module 100 when the IGBT to be tested is charged by using the obtained charging voltage and a preset resistance according to the relation among the resistance, the voltage and the current.
It should be noted that, in the embodiment of the present invention, the oscilloscope serving as the current detection module 300 and the oscilloscope serving as the electric quantity calculation module 400 may be the same oscilloscope, or may be implemented by two different oscilloscopes, which is not limited herein.
Further, the current detection module 300 may detect the charging voltage of the charging module 100 when the IGBT to be detected is charged, and perform average processing on the detected charging voltages to obtain a charging voltage average value, and obtain the charging current according to the charging voltage average value and a preset resistance value.
In this embodiment, the current detection module 300 detects the charging voltage of the IGBT to be detected when the charging module 100 charges the IGBT to be detected for a plurality of times, and performs average processing on the charging voltages to obtain a charging voltage average value, and obtains a charging current according to the charging voltage average value and a preset resistance value, so as to obtain an accurate current, so that the electric quantity calculation module 400 can effectively improve measurement accuracy when calculating the gate charge quantity of the IGBT to be detected according to the current.
The following describes the operation principle of the gate charge amount measurement circuit of the present invention by taking the circuit shown in fig. 2 as an example, and the detailed description is as follows:
as shown in fig. 2, if the oscilloscope is used to output the control signal, when the power supply outputs the operating voltage of 12V to 17V to the VIN terminal, the level signal output from the signal output terminal of the oscilloscope to the HIN terminal is 5V, and the LIN terminal is 0V, and when a certain voltage is applied between the P terminal and the N terminal, the second switching element Q2 is turned on, and the third switching element Q is turned off. After the second switching element Q2 is turned on, the diode D, the second resistor R2 and the second switching element Q2 form a path, the base voltage of the first switching element Q1 is pulled up along with the voltage of the second resistor R2, and the first switching element Q1 is turned on and starts to charge the IGBT to be tested.
When the IGBT to be tested starts to charge, on one hand, an oscilloscope is used for measuring the charging time t of the IGBT to be tested, namely, the time t from the charging start state of the IGBT to be tested to the time when the IGBT to be tested is completely started to charge is detected by the oscilloscope, then the signal output end of the oscilloscope outputs a level signal to the HIN end to be 0V through switching, and the LIN end outputs a level signal to be 5V, so that the grid of the IGBT to be tested is discharged, the IGBT to be tested is turned off, and the charging time measurement is completed.
On the other hand, the voltage detection module 300 detects and measures the charging current i of the IGBT to be tested 。 Because the amplification factor of the first switching element Q1 is large, the current generated by the base electrode of the first switching element Q1 is negligible relative to the current of the collector electrode, so that the current i flowing through the first resistor R1 and the first switching element Q1 can be calculated according to the voltage at two ends of the first resistor R1 and the resistance value of the first resistor R1, and the current i is the charging current of the IGBT to be tested. Because the voltage at two ends of the first resistor R1 is equal to the voltage at two ends of the diode D, an oscilloscope can be used for detecting the voltage at two ends of the diode D, the charging current i of the IGBT to be detected can be obtained according to the ratio of the detected voltage to the resistance value of the first resistor R1, and the charging current i is fed back to the oscilloscope for electric quantity calculation.
After the oscilloscope for calculating the electric quantity receives the fed-back charging current i of the IGBT to be measured, the grid electric quantity of the IGBT to be measured can be calculated according to the formula q=i.t, wherein q is the calculated grid electric quantity of the IGBT to be measured.
In this embodiment, the gate charge amount measurement circuit of the insulated gate bipolar transistor provided by the invention controls the first switching element Q1 to charge the IGBT to be tested when the second switching element Q2 is turned on and the third switching element Q3 is turned off, so that the voltage detection device detects the charging current of the IGBT to be tested in the charging process, and the oscilloscope obtains the time from the start charging state to the complete opening state of the IGBT to be tested, and further calculates the gate charge amount of the IGBT to be tested according to the product of the obtained time and the current, so that the measured gate charge amount is not affected by the structure of the IGBT in the process of calculating the gate charge amount of the IGBT to be tested, further improving the measurement accuracy, and the measurement circuit has simple structure and low cost, thereby providing great convenience for the product design of the insulated gate bipolar transistor and the design of related circuits.
Further, fig. 3 shows a test flow of a measurement method of a gate charge amount measurement circuit of an insulated gate bipolar transistor according to an embodiment of the present invention, where the measurement method includes:
step S10: and when the first control signal is effective and the second control signal is ineffective, the control module controls the charging module to charge the insulated gate bipolar transistor to be tested according to the working voltage.
Step S20: the current detection module detects charging current when the charging module charges the insulated gate bipolar transistor row to be detected, and feeds the charging current back to the electric quantity calculation module.
In this embodiment of the present invention, as a preferred embodiment of the present invention, the current detection module detects the charging voltage of the charging module when the insulated gate bipolar transistor to be tested is charged, and performs an average process on the detected charging voltages to obtain a charging voltage average value, and obtains the charging current according to the charging voltage average value and a preset resistance value.
Step S30: the electric quantity calculation module obtains the time used when the insulated gate bipolar transistor to be measured starts to be in a charged state to be in a fully-opened state, and calculates the grid electric quantity of the insulated gate bipolar transistor to be measured according to the time and the charging current.
In this embodiment of the present invention, as a preferred embodiment of the present invention, the electric quantity calculation module performs multiple measurements on a time used when the insulated gate bipolar transistor to be tested starts to be in a fully on state from a charging state, performs an average calculation on a time obtained by the multiple measurements, and obtains a time according to a calculation result.
It should be noted that, in the embodiment of the present invention, the method for measuring the gate charge of the insulated gate bipolar transistor shown in fig. 3 is implemented based on the gate charge measuring circuit of the insulated gate bipolar transistor shown in fig. 1 and 2, so the specific working principle of the method for measuring the gate charge of the insulated gate bipolar transistor provided in fig. 3 may refer to the specific description process of the gate charge measuring circuit of the insulated gate bipolar transistor shown in fig. 1 and 2, and will not be repeated here.
According to the measuring method of the grid charge quantity measuring circuit of the insulated gate bipolar transistor, provided by the embodiment of the invention, the grid charge quantity of the insulated gate bipolar transistor can be calculated according to the relation among time, current and charge quantity by detecting the charging current of the insulated gate bipolar transistor to be measured and measuring the time used when the insulated gate bipolar transistor to be measured starts to be in a fully-opened state, the measuring data is accurate, the measuring process is simple, convenient and rapid, the economic cost is low, and the problem that the existing IGBT grid charge quantity measuring method cannot accurately measure the IGBT grid charge quantity is solved.
The foregoing is a further detailed description of the invention in connection with the preferred embodiments, and it is not intended that the invention be limited to the specific embodiments described. Several equivalent substitutions or obvious modifications will occur to those skilled in the art to which this invention pertains without departing from the spirit of the invention, and the same should be considered to be within the scope of this invention as defined in the appended claims.
Claims (10)
1. The grid charge quantity measuring circuit is used for measuring the grid charge quantity of the insulated gate bipolar transistor to be measured and is characterized by comprising a control module, a charging module, a current detection module and an electric quantity calculation module;
the first input end of the charging module is connected with the working voltage and the first input end of the current detection module, the control end of the charging module is connected with the second input end of the current detection module, the output end of the current detection module is connected with the input end of the electric quantity calculation module, the first output end of the charging module is connected with the first input end of the control module, the second output end of the charging module is connected with the second input end of the control module and the grid electrode of the insulated gate bipolar transistor to be detected, the first control end of the control module receives a first control signal, the second control end of the control module receives a second control signal, the output end of the control module is connected with the emitter electrode of the insulated gate bipolar transistor to be detected and the first detection end of the electric quantity calculation module, and the collector electrode of the insulated gate bipolar transistor to be detected is connected with the second detection end of the electric quantity calculation module;
when the first control signal is effective and the second control signal is not effective, the control module controls the charging module to charge the insulated gate bipolar transistor to be tested according to the working voltage, the current detection module detects charging current when the charging module charges the insulated gate bipolar transistor to be tested and feeds the charging current back to the electric quantity calculation module, and the electric quantity calculation module obtains time used when the insulated gate bipolar transistor to be tested starts to be charged to be in a full-on state and calculates grid charge quantity of the insulated gate bipolar transistor to be tested according to the time and the charging current;
and when the first control signal is invalid and the second control signal is valid, the control module controls the charging module to stop charging the insulated gate bipolar transistor to be tested.
2. The gate charge amount measurement circuit of claim 1, wherein the current detection module detects the charging voltage of the charging module when the insulated gate bipolar transistor to be tested is charged a plurality of times, and performs an average process on the detected plurality of charging voltages to obtain a charging voltage average value, and the charging current is obtained according to the charging voltage average value and a preset resistance value.
3. The gate charge amount measurement circuit according to claim 1 or 2, wherein the charge amount calculation module performs a plurality of measurements on a time used when the insulated gate bipolar transistor to be measured is in a state from a start-up state to a fully-on state, performs an average calculation on the time obtained by the plurality of measurements, and obtains the time based on a calculation result.
4. The gate charge amount measurement circuit of claim 1, wherein the charging module comprises a first switching element, a diode, a first resistor, and a second resistor;
the anode of the diode is connected with the second end of the first resistor to form a first input end of the charging module, the cathode of the diode, the first end of the second resistor and the control end of the first switching element are connected with each other to form a control end of the charging module, the second end of the first resistor is connected with the input end of the first switching element, the second end of the second resistor is a first output end of the charging module, and the output end of the first switching element is a second output end of the charging module.
5. The gate charge amount measurement circuit of claim 1, wherein the control module comprises a third resistor, a fourth resistor, a second switching element, and a third switching element;
the input end of the second switching element is the first input end of the control module, the input end of the third switching element is the second input end of the control module, the control end of the second switching element is connected with the first end of the third resistor, the second end of the third resistor is the first control end of the control module, the control end of the third switching element is connected with the first end of the fourth resistor, the second end of the fourth resistor is the second control end of the control module, and the output end of the second switching element and the output end of the third switching element are connected together to form the output end of the control module.
6. The gate charge amount measurement circuit of claim 1, wherein the charge amount calculation module is an oscilloscope, the first input terminal and the second input terminal of the oscilloscope are respectively a first detection terminal and a second detection terminal of the charge amount calculation module, and the third input terminal of the oscilloscope is an input terminal of the charge amount calculation module.
7. The gate charge amount measurement circuit of claim 1, further comprising a current limiting module;
the first end of the current limiting module is connected with the second detection end of the electric quantity calculation module, and the second end of the current limiting module is connected with the collector electrode of the insulated gate bipolar transistor to be tested;
and the current limiting module limits the current of the insulated gate bipolar transistor to be tested in the conducting process.
8. A measurement method of the gate charge amount measurement circuit based on the insulated gate bipolar transistor according to claim 1, characterized in that the measurement method comprises:
the control module controls the charging module to charge the insulated gate bipolar transistor to be tested according to the working voltage when the first control signal is effective and the second control signal is ineffective;
the current detection module detects charging current when the charging module charges the insulated gate bipolar transistor to be detected, and feeds the charging current back to the electric quantity calculation module;
the electric quantity calculation module obtains the time used by the insulated gate bipolar transistor to be measured from the starting state to the full-on state, and calculates the grid electric quantity of the insulated gate bipolar transistor to be measured according to the time and the charging current.
9. The measurement method according to claim 8, wherein the current detection module detecting a charging current when the charging module charges the insulated gate bipolar transistor to be measured includes:
the current detection module detects charging voltages of the insulated gate bipolar transistor to be detected when the charging module charges the insulated gate bipolar transistor to be detected for a plurality of times, average value processing is carried out on the detected charging voltages, so as to obtain a charging voltage average value, and charging current is obtained according to the charging voltage average value and a preset resistance value.
10. The measurement method according to claim 8 or 9, wherein the acquiring, by the power calculation module, a time taken for the insulated gate bipolar transistor to be measured to start a charging state to a fully on state includes:
the electric quantity calculation module is used for measuring the time used by the insulated gate bipolar transistor to be measured from the starting state to the full-on state for multiple times, calculating the average value of the time obtained by the multiple times of measurement, and obtaining the time according to a calculation result.
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| CN112114237B (en) * | 2020-09-04 | 2022-03-01 | 重庆大学 | IGBT module internal defect monitoring method and circuit based on gate pole charge change |
| CN113484701B (en) * | 2021-06-03 | 2024-01-26 | 度普(苏州)新能源科技有限公司 | Insulation detection method, insulation detection device, computer readable storage medium and processor |
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