CN105334468A - Solar battery capacitor time domain testing device and testing method - Google Patents
Solar battery capacitor time domain testing device and testing method Download PDFInfo
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Abstract
The invention discloses a solar battery capacitor time domain testing device and testing method. The solar battery capacitor time domain testing device comprises a direct current power supply, a pulse generating circuit, a field effect tube, a switching control circuit and a resistor to be detected. The testing device controls the complementary starting of the field effect tube and the switching control circuit mainly through the pulse generating circuit; when the switching control circuit is started, the direct current power supply charges a solar battery capacitor; and when the switching control circuit is closed, the charged solar battery capacitor is discharged through the resistor to be detected and the field effect tube, the discharge current of the resistor to be detected is monitored through a first oscilloscope connected in parallel with the resistor to be detected, and the discharge voltage of a solar battery is monitored through a second oscilloscope connected in parallel with the solar battery, thereby obtaining an equivalent capacitor of the solar battery by virtue of calculation. The testing method has the advantages of simple hardware structure, high efficiency and high accuracy and can be used for testing spatial single solar batteries or satellite solar battery arrays.
Description
Technical field
The present invention relates to technical field of solar cells, particularly relate to a kind of solar cell electric capacity waving map device and method of testing.
Background technology
For current communications satellite field, the main energy comes from solar cell, and reliable for design one, the effective solar cell for space use square formation of electric capacity dynamic parameter of solar cell is one of important parameter.The electric capacity dynamic behaviour understanding solar cell is required for the reliability of design space sun square formation switching capability size and adjustment control.It directly affects the interface compatibility of power-supply controller of electric in solar cell for space use battle array.
Solar cell is a kind of active device, and selfcapacity is constantly change with illumination and external voltage, and its electric capacity is a dynamic nonlinear capacitance, can not test with general for testing apparatus such as LRC tester or the multimeter etc. of surveying static P-N junction electric capacity.
Testing solar battery electric capacity adopts in the world is at present adopt vector network analyzer to use impedance spectroscopy to test its frequency domain electric capacity, obtain the equivalent capacity of solar cell, this frequency domain technique obtains the electric capacity of solar cell by being applied to the response of small-signal alternate current operation point in frequency domain.But this means of testing, use instrument and equipment as expensive in network analyzer, data processing is quite complicated, needs to make repeatedly integration in frequency domain and iterates, and data need repeatedly to revise.
Summary of the invention
The technical problem to be solved in the present invention is: provide a kind of solar cell electric capacity waving map device and method of testing.This solar cell electric capacity waving map device and method of testing adopt the mode of waving map, compared to frequency domain test, have the simple advantage of hardware configuration, compare and frequency domain test method, have the advantage that testing efficiency is high.
The technical scheme that the present invention takes for the technical matters existed in solution known technology is:
A kind of solar cell electric capacity waving map device, at least comprises:
DC power supply, the voltage regulation limits of this DC power supply is 0V ~ 20V;
Pulse generating circuit, the control terminal Port1 of described pulse generating circuit is electrically connected with the grid of field effect transistor Q, and described pulse generating circuit, for controlling the switch driving field effect transistor Q, controls the switch of described ON-OFF control circuit simultaneously;
Field effect transistor Q, this field effect transistor Q are used for the path of electric discharge after described solar cell is saturated;
ON-OFF control circuit, this ON-OFF control circuit comprise the Pulse Width Control terminals P ort1 be electrically connected with pulse generating circuit lead-out terminal, the electricity taking terminal VCC be electrically connected with DC power output terminal, with the electricity taking terminal Vd of Constant Direct Current power output end sub-connection, the terminals P ort2 that is electrically connected with the drain electrode of field effect transistor Q; This Pulse Width Control terminals P ort1 is electrically connected with the emitter of the 4th PNP triode T4 by the 4th resistance R4, the base earth of the 4th PNP triode T4, the collector of the 4th PNP triode T4 is electrically connected with the base stage of the 3rd NPN triode T3 by the 5th resistance R5; It is-5V that the emitter of the 3rd NPN triode T3 meets direct supply Vd, and the 5th resistance R5 is electrically connected with the emitter of the 3rd NPN triode T3 by the 6th resistance R6; The collector of the 3rd NPN triode T3 is electrically connected with electricity taking terminal VCC by the tenth resistance R10; This electricity taking terminal VCC is electrically connected with the emitter of the first PNP triode T1, and the collector of this first PNP triode T1 is electrically connected with the positive pole of diode D1, and this diode D1 negative pole is electrically connected with terminals P ort2 by the first resistance R1; The base stage of this first PNP triode T1 is electrically connected with the collector of the 2nd NPN triode T2 by the 8th resistance R8; The base stage of the 2nd NPN triode T2 is electrically connected with the collector of the 3rd NPN triode T3; It is-5V that the emitter of the 2nd NPN triode T2 meets direct supply Vd; The 7th resistance R7 is connected with between the base stage of the 2nd NPN triode T2 and emitter; The 9th resistance R9 is connected with between the base stage of electricity taking terminal VCC and the first PNP triode T1;
Described terminals P ort2 is electrically connected with the drain electrode of field effect transistor Q;
The source electrode of the drain electrode of described field effect transistor Q, testing resistance Rs, solar cell S, described field effect transistor Q is composed in series the first loop successively;
The drain electrode of DC power supply, ON-OFF control circuit, field effect transistor Q, testing resistance Rs, described field effect transistor Q drain electrode, solar cell S form second servo loop;
First oscillograph, this first oscillograph is in parallel with test resistance Rs;
Second oscillograph, this second oscillograph is in parallel with solar cell S.
A method of testing for solar cell electric capacity waving map device, comprises the steps:
Step one, above-mentioned solar cell electric capacity waving map device and solar cell are placed in experimental situation, above-mentioned experimental situation comprises following parameter: temperature range 21 DEG C ~ 23 DEG C, illumination range is 0 ~ 10
-4lx;
Step 2, unbalanced pulse control circuit, this pulse control circuit exports square-wave signal; Regulate the output voltage of DC power supply, the solar cell both end voltage making the second oscillograph monitoring is 0.2V, now utilize the time dependent discharge curve of the first oscillograph recording testing resistance Rs both end voltage, utilize the second oscillograph recording solar cell voltage change curve in time;
Step 3, the electric discharge result of the first oscillograph test testing resistance Rs is plotted in a two-dimensional coordinate system; The abscissa axis of this two-dimensional coordinate system is the time; Axis of ordinates is the voltage at testing resistance Rs two ends; And then form multiple discrete point, discrete point is in turn connected to form the first curve according to time point sequencing, this first curve is testing resistance Rs both end voltage change curve U-t in time, by the ordinate value of discrete point in this first curve respectively divided by the resistance of testing resistance Rs, the ordinate value obtained is the electric current flowing through Rs, with the ordinate that this current value is new, the abscissa value of former discrete point, repaint curve, obtain the second curve, this second curve is by testing resistance Rs electric current change curve I-t in time;
Step 4, utilize the total electricity Q of the second curve acquisition solar cell capacitor discharge
1, the area surrounded between this second curve and time shaft, is the total electricity Q of solar cell capacitor discharge
1;
The output voltage of step 5, adjustment DC power supply, makes the both end voltage of the solar cell of the second oscillograph monitoring increase Δ aV at every turn, until n-th time, wherein: n is integer, and 1≤n≤1+V
oc/ a, Voc are solar batteries;
Step 6, repeat step one, step 2, step 3, step 4 and step 5, obtain solar cell respectively and to discharge total electricity Q
1, Q
2q
n; Obtain solar cell capacitor discharge voltage U simultaneously
n=0.2+a* (n-1);
Step 7, following formulae discovery is utilized to draw the equivalent capacity of solar cell: C
n=Q
n/ U
n; Wherein: C
nfor equivalent capacity; Q
nfor total electricity; The Cn recorded n time averages and obtains the equivalent capacity of the solar cell needing test.
The advantage that the present invention has and good effect are:
1, the present invention adopts waving map method, do not need the expensive device such as network analyzer, only need design on-off circuit and change-over circuit, the data acquisition equipment such as variable power supply and oscillograph, data handling procedure adopts frequency domain test method simply not need a lot of integral iteration relatively, only needs line integral process several times, and the test process time is shorter, be particularly suitable for the alternating-current parameter measuring some nonlinear devices, the test of solar cell monomer or solar battery array equivalent capacity can be applied in.
2, accuracy is higher: test result is compared with employing vector network analyzer frequency domain test result, and result is basically identical, average error 2.3%.
3, be widely used: this method of testing can be widely used in inspection and the test of space system satellite sun array solar cell, ensure the reliable of space cell square formation.
Accompanying drawing illustrates:
Fig. 1 is the circuit block diagram of the preferred embodiment of the present invention;
Fig. 2 is the physical circuit figure of preferred embodiment of the present invention;
Fig. 3 is the ON-OFF control circuit schematic diagram of the preferred embodiment of the present invention;
Fig. 4 is the pulse generating circuit schematic diagram of the preferred embodiment of the present invention;
Fig. 5 is the change curve adopting the testing resistance two ends of method of testing of the present invention under the different bias voltage of solar cell, solar cell two ends and pulse to export;
Fig. 6 is the result that application the present invention tests out the GaAs solar cell being numbered 5E684-9-2.
Embodiment
For summary of the invention of the present invention, Characteristic can be understood further, hereby exemplify following examples, and coordinate accompanying drawing to be described in detail as follows:
Consult Fig. 1, Fig. 2, Fig. 3 and Fig. 4, a kind of solar cell electric capacity waving map device, comprising:
DC power supply, the voltage regulation limits of this DC power supply is 0V ~ 20V;
Pulse generating circuit, the control terminal Port1 of described pulse generating circuit is electrically connected with the grid of field effect transistor Q, and described pulse generating circuit, for controlling the switch driving field effect transistor Q, controls the switch of described ON-OFF control circuit simultaneously;
Field effect transistor Q, this field effect transistor Q are used for the path of electric discharge after described solar cell is saturated;
ON-OFF control circuit, this ON-OFF control circuit comprise the Pulse Width Control terminals P ort1 be electrically connected with pulse generating circuit lead-out terminal, the electricity taking terminal VCC be electrically connected with DC power output terminal, with the electricity taking terminal Vd of Constant Direct Current power output end sub-connection, the terminals P ort2 that is electrically connected with the drain electrode of field effect transistor Q; This Pulse Width Control terminals P ort1 is electrically connected with the emitter of the 4th PNP triode T4 by the 4th resistance R4, the base earth of the 4th PNP triode T4, the collector of the 4th PNP triode T4 is electrically connected with the base stage of the 3rd NPN triode T3 by the 5th resistance R5; It is-5V that the emitter of the 3rd NPN triode T3 meets direct supply Vd, and the 5th resistance R5 is electrically connected with the emitter of the 3rd NPN triode T3 by the 6th resistance R6; The collector of the 3rd NPN triode T3 is electrically connected with electricity taking terminal VCC by the tenth resistance R10; This electricity taking terminal VCC is electrically connected with the emitter of the first PNP triode T1, and the collector of this first PNP triode T1 is electrically connected with the positive pole of diode D1, and this diode D1 negative pole is electrically connected with terminals P ort2 by the first resistance R1; The base stage of this first PNP triode T1 is electrically connected with the collector of the 2nd NPN triode T2 by the 8th resistance R8; The base stage of the 2nd NPN triode T2 is electrically connected with the collector of the 3rd NPN triode T3; It is-5V that the emitter of the 2nd NPN triode T2 meets direct supply Vd; The 7th resistance R7 is connected with between the base stage of the 2nd NPN triode T2 and emitter; The 9th resistance R9 is connected with between the base stage of electricity taking terminal VCC and the first PNP triode T1;
Described terminals P ort2 is electrically connected with the drain electrode of field effect transistor Q;
The source electrode of the drain electrode of described field effect transistor Q, testing resistance Rs, solar cell S, described field effect transistor Q is composed in series the first loop successively;
The drain electrode of DC power supply, ON-OFF control circuit, field effect transistor Q, testing resistance Rs, described field effect transistor Q drain electrode, solar cell S form second servo loop;
First oscillograph, this first oscillograph is in parallel with test resistance Rs;
Second oscillograph, this second oscillograph is in parallel with solar cell S.
In above preferred embodiment: described solar cell is connected with the source electrode of field effect transistor Q, testing resistance Rs respectively by concentric cable.
The test philosophy of above preferred embodiment is as follows: the output terminal of pulse generating circuit exports as dutycycle is the low and high level of 1, the output terminal of pulse generating circuit is electrically connected with the Enable Pin of ON-OFF control circuit and the grid of field effect transistor respectively, when the output of pulse generating circuit is low level, enable and the conducting of ON-OFF control circuit, meanwhile field effect transistor cut-off, direct supply passes through ON-OFF control circuit, testing resistance, to solar cell capacitor charging to saturated, when pulse generating circuit signal is high level, ON-OFF control circuit Enable Pin is ended, meanwhile field effect transistor is opened, the solar cell electric capacity being before filled electricity passes through testing resistance, field effect transistor is discharged, in this discharge process, utilize the discharge curve of the first oscillograph recording testing resistance, utilize the sparking voltage of the second oscillograph recording solar cell, the discharge curve of the first oscillograph testing resistance is carried out numerical integration, obtain total electricity Δ Q that solar cell discharges on testing resistance, the sparking voltage Δ U of solar cell is obtained by the second oscillograph, the dynamic capacity of solar cell is obtained by formula C=Δ Q/ Δ U.
Referring to Fig. 2, in described pulse generating circuit: Port1, for controlling to drive the switch of field effect transistor Q, controls the switch of T3 in described ON-OFF control circuit simultaneously, making the 3rd NPN triode T3 and field effect transistor Q complementation open with closed;
Refer to Fig. 3, in ON-OFF control circuit: the first resistance R1 is used for current-limiting resistance, and diode D1 discharges to power supply VCC for stoping solar cell S electric capacity, and solar cell is only discharged to the field effect transistor Q of diverter branch.Triode T4 is used for current potential translation, first PNP triode T1,2nd NPN triode T2,3rd NPN triode T3 forms on-off circuit, pulse producer by Port1 controls, and ensures the first PNP triode T1 simultaneously, the 2nd NPN triode T2,3rd NPN triode T3 and field effect transistor Q complementation is opened with closed, and the 9th resistance R9 ensure that moving back of the first PNP triode T1 is saturated.It is that the negative supply of-5V ensures that 0 level of the first PNP triode T1 pipe is opened that emitter connects direct supply Vd size.
In above-mentioned specific embodiment: the method for testing of solar cell electric capacity waving map device, mainly comprises the steps:
1, circuit is set up: what the solar cell in the preferred embodiment was selected is GaAs solar cell.For reducing the impact due to noise, short concentric cable should be adopted to connect solar cell.Regulate DC electric power output voltage, make test GaAs solar cell voltage be 0.2V.When pulse generating circuit exports as low level, ON-OFF control circuit is opened, and the field effect transistor of diverter branch is in cut-off state simultaneously, and solar cell capacitor charging to saturated, is detected the continuous change of solar cell both end voltage by DC power supply with the second oscillograph.When pulse generating circuit exports as high level, ON-OFF control circuit is ended, the field effect transistor of diverter branch is opened simultaneously, and the field effect transistor of solar cell electric capacity to diverter branch is discharged, from survey, this momentary current discharge time and discharge current can treat that the first oscillograph two ends of resistance obtain.Regulate DC supply voltage, make test GaAs solar cell voltage be respectively 0.4V, 0.6V, 0.8V, 1V, record the change in voltage of the testing resistance of the first oscillograph test respectively, record the change of the second oscillograph solar cell voltage.
2, total data processing: can obtain solar cell electric capacity to the discharge current of testing resistance change curve in time through data processing, be exactly region electricity Q below this curve, obtain the equivalent capacity of battery divided by corresponding solar cell bias voltage.For Fig. 5 a, regulate DC supply voltage, solar cell both end voltage is made to be 0.2V, unbalanced pulse circuit, the output short dash line as shown in Figure 5 a of this pulsing circuit, gather solar cell two ends change voltage long dotted line as shown in Figure 5 a from the second oscillograph, gather the solid line the change as shown in Figure 5 a of testing resistance both end voltage from the first oscillograph.The curve of the testing resistance in Fig. 5 a is taken out separately, for multiple discrete point, the ordinate of discrete point is testing resistance both end voltage, by the ordinate of discrete point respectively divided by the resistance of this resistance, obtain the electric current of multiple discrete point, with the electric current obtained for ordinate, curve is repainted with the horizontal ordinate of former discrete point, obtain the second curve, this second curve is by testing resistance electric current change curve in time, and the area surrounded between this curve and time shaft is total electricity Q1 that discharges under this 0.2V.This institute is enclosed area and can be obtained by line integral.Namely total for the electric discharge obtained under 0.2V electricity Q1 is obtained the electric capacity of solar cell under 0.2V divided by 0.2V.
Fig. 5 b, Fig. 5 c, Fig. 5 d regulate DC power supply, make solar cell both end voltage be test result under 0.4V, 0.6V, 0.8V.Way described in Fig. 5 a is adopted to above test result, the electric capacity of the solar cell under several different voltage can be calculated, all capacitances calculated are averaged, obtains the electric capacity of this solar cell to be measured.
This tests the electric capacity of space GaAs solar cell, because the electric capacity of this battery and battery both end voltage square root are inversely proportional to.Only an integration need be carried out to discharge curve.
3, the data precision: for testing the accuracy of this method of testing, adopt the method to direct capacitance device respectively size be that three capacitors of 0.21uF, 0.47uF, 0.95uF are tested, direct current DC bias voltage from 0.2 to 1V, step interval 0.2V.The test result obtained and proven capacitor element contrast, and result is basically identical.Vector network analyzer is adopted to test the response of small-signal alternate current operation point in frequency domain of 10 solar cells in addition, carry out repeatedly integration in the response of frequency domain to iterate the solar cell capacity measurement result that obtains and invent the time domain approach adopted and carry out test result and compare, average error is only 2.3%.
4, test result: as shown in Figure 6, this result is consistent with the result adopting network analyzer to test in the past for the result tested out the GaAs solar cell being numbered 5E684-9-2.This method of testing may be used for inspection and the test of space system satellite sun array battery, ensures the reliability of solar cell for space use battle array.
With the method for testing of this solar cell electric capacity waving map device, given GaAs solar cell is tested, step specific as follows:
Step one, above-mentioned solar cell electric capacity waving map device and solar cell are placed in experimental situation, above-mentioned experimental situation comprises following parameter: temperature range 21 DEG C ~ 23 DEG C, illumination range is 0 ~ 10
-4lx;
Step 2, unbalanced pulse control circuit, make it to export the square wave for stable.Regulate the output voltage of DC power supply, the solar cell both end voltage making the second oscillograph monitoring is 0.2V, now utilize the time dependent discharge curve of the first oscillograph recording testing resistance Rs both end voltage, utilize the second oscillograph recording solar cell voltage change curve in time.
Step 3, the electric discharge result of the first oscillograph test testing resistance Rs is plotted in a two-dimensional coordinate system; The abscissa axis of this two-dimensional coordinate system is the time; Axis of ordinates is the voltage at testing resistance Rs two ends; And then form multiple discrete point, discrete point is in turn connected to form the first curve according to time point sequencing, this first curve is testing resistance Rs both end voltage change curve U-t in time, by the ordinate value of discrete point in this first curve respectively divided by the resistance of testing resistance Rs, the ordinate value obtained is the electric current flowing through Rs, with the ordinate that this current value is new, the abscissa value of former discrete point, repaint curve, obtain the second curve, this second curve is by testing resistance Rs electric current change curve I-t in time;
Step 4, utilize the total electricity Q of the second curve acquisition solar cell capacitor discharge
1, the area surrounded between this second curve and time shaft, is the total electricity Q of solar cell capacitor discharge
1; Discharge time for this routine GaAs solar cell gets 5 × 10
-4s;
The output voltage of step 5, adjustment DC power supply, makes the both end voltage of the solar cell of the second oscillograph monitoring be respectively 0.4V, 0.6V, 0.8V, 1V; Respectively repeat steps one, step 2, step 3 and step 4, obtain solar cell respectively and to discharge total electricity Q
2, Q
3, Q
4, Q
5; Obtain solar cell capacitor discharge voltage U simultaneously and be respectively U
1=0.2V, U
2=0.4V, U
3=0.6V, U
4=0.8V, U
5=1V;
Step 6, following formulae discovery is utilized to draw the equivalent capacity of solar cell: C=1/5* (Q
1/ U
1+ Q
2/ U
2+ Q
3/ U
3+ Q
4/ U
4+ Q
5/ U
5).
Above embodiments of the invention have been described in detail, but described content being only preferred embodiment of the present invention, can not being considered to for limiting practical range of the present invention.All equalizations done according to the present patent application scope change and improve, and all should still belong within patent covering scope of the present invention.
Claims (3)
1. a solar cell electric capacity waving map device, is characterized in that: at least comprise:
DC power supply, the voltage regulation limits of this DC power supply is 0V ~ 20V;
Pulse generating circuit, the control terminal Port1 of described pulse generating circuit is electrically connected with the grid of field effect transistor Q, and described pulse generating circuit, for controlling the switch driving field effect transistor Q, controls the switch of described ON-OFF control circuit simultaneously;
Field effect transistor Q, this field effect transistor Q are used for the path of electric discharge after described solar cell is saturated;
ON-OFF control circuit, this ON-OFF control circuit comprise the Pulse Width Control terminals P ort1 be electrically connected with pulse generating circuit lead-out terminal, the electricity taking terminal VCC be electrically connected with DC power output terminal, with the electricity taking terminal Vd of Constant Direct Current power output end sub-connection, the terminals P ort2 that is electrically connected with the drain electrode of field effect transistor Q; This Pulse Width Control terminals P ort1 is electrically connected with the emitter of the 4th PNP triode T4 by the 4th resistance R4, the base earth of the 4th PNP triode T4, the collector of the 4th PNP triode T4 is electrically connected with the base stage of the 3rd NPN triode T3 by the 5th resistance R5; It is-5V that the emitter of the 3rd NPN triode T3 meets direct supply Vd, and the 5th resistance R5 is electrically connected with the emitter of the 3rd NPN triode T3 by the 6th resistance R6; The collector of the 3rd NPN triode T3 is electrically connected with electricity taking terminal VCC by the tenth resistance R10; This electricity taking terminal VCC is electrically connected with the emitter of the first PNP triode T1, and the collector of this first PNP triode T1 is electrically connected with the positive pole of diode D1, and this diode D1 negative pole is electrically connected with terminals P ort2 by the first resistance R1; The base stage of this first PNP triode T1 is electrically connected with the collector of the 2nd NPN triode T2 by the 8th resistance R8; The base stage of the 2nd NPN triode T2 is electrically connected with the collector of the 3rd NPN triode T3; It is-5V that the emitter of the 2nd NPN triode T2 meets direct supply Vd; The 7th resistance R7 is connected with between the base stage of the 2nd NPN triode T2 and emitter; The 9th resistance R9 is connected with between the base stage of electricity taking terminal VCC and the first PNP triode T1;
Described terminals P ort2 is electrically connected with the drain electrode of field effect transistor Q;
The source electrode of the drain electrode of described field effect transistor Q, testing resistance Rs, solar cell S, described field effect transistor Q is composed in series the first loop successively;
The drain electrode of DC power supply, ON-OFF control circuit, field effect transistor Q, testing resistance Rs, described field effect transistor Q drain electrode, solar cell S form second servo loop;
First oscillograph, this first oscillograph is in parallel with test resistance Rs;
Second oscillograph, this second oscillograph is in parallel with solar cell S.
2. solar cell electric capacity waving map device according to claim 1, is characterized in that: described solar cell is connected with the source electrode of field effect transistor Q, testing resistance Rs respectively by concentric cable.
3., based on a method of testing for solar cell electric capacity waving map device described in claim 1 or 2, it is characterized in that: comprise the steps:
Step one, above-mentioned solar cell electric capacity waving map device and solar cell are placed in experimental situation, above-mentioned experimental situation comprises following parameter: temperature range 21 DEG C ~ 23 DEG C, illumination range is 0 ~ 10
-4lx;
Step 2, unbalanced pulse control circuit, this pulse control circuit exports square-wave signal; Regulate the output voltage of DC power supply, the solar cell both end voltage making the second oscillograph monitoring is 0.2V, now utilize the time dependent discharge curve of the first oscillograph recording testing resistance Rs both end voltage, utilize the second oscillograph recording solar cell voltage change curve in time;
Step 3, the electric discharge result of the first oscillograph test testing resistance Rs is plotted in a two-dimensional coordinate system; The abscissa axis of this two-dimensional coordinate system is the time; Axis of ordinates is the voltage at testing resistance Rs two ends; And then form multiple discrete point, discrete point is in turn connected to form the first curve according to time point sequencing, this first curve is testing resistance Rs both end voltage change curve U-t in time, by the ordinate value of discrete point in this first curve respectively divided by the resistance of testing resistance Rs, the ordinate value obtained is the electric current flowing through Rs, with the ordinate that this current value is new, the abscissa value of former discrete point, repaint curve, obtain the second curve, this second curve is by testing resistance Rs electric current change curve I-t in time;
Step 4, utilize the total electricity Q of the second curve acquisition solar cell capacitor discharge
1, the area surrounded between this second curve and time shaft, is the total electricity Q of solar cell capacitor discharge
1;
The output voltage of step 5, adjustment DC power supply, makes the both end voltage of the solar cell of the second oscillograph monitoring increase Δ aV at every turn, until n-th time, wherein: n is integer, and 1≤n≤1+V
oc/ a, Voc are solar batteries;
Step 6, repeat step one, step 2, step 3, step 4 and step 5, obtain solar cell respectively and to discharge total electricity Q
1, Q
2q
n; Obtain solar cell capacitor discharge voltage U simultaneously
n=0.2+a* (n-1);
Step 7, following formulae discovery is utilized to draw the equivalent capacity of solar cell: C
n=Q
n/ U
n; Wherein: C
nfor equivalent capacity; Q
nfor total electricity; The Cn recorded n time averages and obtains the equivalent capacity of the solar cell needing test.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107015087A (en) * | 2017-05-17 | 2017-08-04 | 华中科技大学 | A kind of capacitive property detection method of photoelectric device |
| CN113612442A (en) * | 2021-06-28 | 2021-11-05 | 上海空间电源研究所 | Electromagnetic pulse injection solar cell test device |
| CN116667784A (en) * | 2023-04-28 | 2023-08-29 | 一道新能源科技股份有限公司 | Capacitance testing method and device for photovoltaic module |
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| CN113612442A (en) * | 2021-06-28 | 2021-11-05 | 上海空间电源研究所 | Electromagnetic pulse injection solar cell test device |
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| CN116667784B (en) * | 2023-04-28 | 2024-03-15 | 一道新能源科技股份有限公司 | Capacitance testing method and device for photovoltaic module |
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