CN107015087B - A kind of capacitive property detection method of photoelectric device - Google Patents
A kind of capacitive property detection method of photoelectric device Download PDFInfo
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- CN107015087B CN107015087B CN201710348378.4A CN201710348378A CN107015087B CN 107015087 B CN107015087 B CN 107015087B CN 201710348378 A CN201710348378 A CN 201710348378A CN 107015087 B CN107015087 B CN 107015087B
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The invention discloses a kind of capacitive property detection methods of photoelectric device, this method comprises: determining test voltage, the test voltage is used for the capacitive property of testing photoelectronic device, the test voltage is since starting voltage, continuously rise to final voltage, since the final voltage, continuously drop to starting voltage terminates the test voltage immediately, and the rate that the test voltage rises is identical with the rate of decline；By the both ends of the test voltage loading to photoelectric device, the capacitive property of the photoelectric device is determined according to the variation relation of test electric current and test voltage, the test electric current is the electric current flowed through on the photoelectric device during test voltage consecutive variations, and the photoelectric device is placed in the environment of not illumination.The present invention rises or falls rate by test voltage consecutive variations, and by change test voltage, has accurately reflected the capacitive property of photoelectric device.
Description
Technical field
The invention belongs to the detection fields of photoelectric device capacitive property, more particularly, to a kind of capacitor of photoelectric device
Method for testing performance.
Background technique
As third generation solar cell, perovskite solar battery is with its high light photoelectric transformation efficiency and inexpensive nothing
The characteristics of pollution, the concern by more and more people.Meanwhile a kind of perovskite solar battery of novel all print formula is because of it
The efficiency of cheap higher cost has more pushed the industrialization process of perovskite solar battery.Therefore, the perovskite sun is detected
The technological means of energy battery performance is particularly important.
It is many at present studies have shown that in perovskite solar cell device photoelectric conversion performance test process, perovskite
The current-voltage scanning of solar battery can cause forward and reverse curve not to be overlapped since scanning direction is different, this kind of phenomenon quilt
Referred to as ysteresis effect.Occur in this novel all print formula perovskite solar battery it is counter sweep efficiency be higher than just sweep effect
Rate, it is counter sweep efficiency and be equal to just sweep efficiency and anti-efficiency of sweeping lower than just sweeping three kinds of different types of devices of efficiency, these three types
Device be referred to as normal ysteresis effect device, without ysteresis effect device and reversion ysteresis effect device.
But traditional test perovskite solar cell test method can only test light shine lower solar battery electric current-
The difference of voltage simple scanning curve, and this kind of method can not be scanned the company of circulation as direction change to device
Continuous measurement, discontinuous measurement results in the dynamic process of device discontinuous, thus the not capacitor of can completely reaction member
Characteristic.
To sum up, the capacitive property detection method of existing photoelectric device cannot accurately measure perovskite solar cell device
Capacitive property.
Summary of the invention
The purpose of the present invention is to provide the capacitive property detection methods and system of a kind of photoelectric device, it is intended to solve existing
Technology is unable to circulation change test voltage direction, and the capacitive property of perovskite solar battery is only tested under illumination condition,
The technical issues of can not completely reflecting the capacitive property of perovskite solar cell device.
To achieve the above object, the embodiment of the invention provides a kind of capacitive property detection methods of photoelectric device, comprising:
Determine that test voltage, the test voltage are used for the capacitive property of testing photoelectronic device, the test voltage is from starting voltage
Start, continuously rises to final voltage, the test voltage continuously drops to starting voltage since the final voltage immediately
Terminate, the rate that the test voltage rises is identical with the rate of decline；By the two of the test voltage loading to photoelectric device
End determines that the capacitive property of the photoelectric device, the test electric current are according to the variation relation of test electric current and test voltage
The electric current flowed through on the photoelectric device during test voltage consecutive variations, the photoelectric device are placed in no light
According to environment in.
Specifically, since the capacitive property of photoelectric device is drawn by each interface charge transport rate mismatch of device inside
It rises, therefore is increased continuously by test voltage or small change, accurately reflected the capacitive property of photoelectric device.
Optionally, the capacitive property of the photoelectric device is determined according to the variation relation of test voltage and test voltage, is wrapped
It includes: during the test voltage consecutive variations, determining the test electric current flowed through on the photoelectric device, calculate test electric current
Density and the logarithm for testing current density；Using the logarithm and test voltage of logarithmic coordinates system characterization test current density
Variation relation；It determines in the logarithmic coordinates system that test voltage rises to during the final voltage from starting voltage to test
First sampled voltage of the logarithm variation maximum of current density, and to determine that test voltage is dropped to from final voltage described
The second sampled voltage of the logarithm variation maximum of current density is tested during starting voltage；According to the first sampling electricity
Pressure and the difference of the second sampled voltage determine the capacitive reactance of the photoelectric device, and the capacitive reactance of the difference and the photoelectric device is at anti-
Than the capacitive reactance of the photoelectric device is respectively with the capacitance of the climbing speed of the test voltage and the photoelectric device at anti-
Than.
Optionally, the capacitance of the photoelectric device is determined according to the climbing speed of the difference and the test voltage,
When the capacitance of the photoelectric device is less than first threshold, the capacitive property of the photoelectric device meets preset requirement.
Specifically, when the difference of the first sampled voltage and the second sampled voltage is smaller, it is reflected as each interface of device inside
Charge transport rate more matches, and capacitive reactance is bigger, illustrates that the performance of photoelectric device is better.
Optionally, the photoelectric device is perovskite solar battery comprising normal ysteresis effect device is imitated without hysteresis
Answer device and reversion ysteresis effect device.
Optionally, the capacitor value of normal ysteresis effect device and reversion ysteresis effect device is upper with the test voltage
The increase of raising speed rate and become smaller.
Specifically, test voltage rate of change is bigger, causes the rate that charge transmits between interface more to mismatch, to make electricity
Hold effect to increase.
Optionally, the climbing speed of test voltage is 1mV/s~500mV/s.
Optionally, the starting voltage is less than -0.5V, and the final voltage is greater than 0.5V.
In general, through the invention it is contemplated above technical scheme is compared with the prior art, have below beneficial to effect
Fruit:
1, the embodiment of the present invention has accurately reflected the capacitive property of photoelectric device by test voltage consecutive variations.
2, the electric current of perovskite solar battery in the dark state is measured with cyclic voltammetry, is obtained by test data analysis
The curve of perovskite solar cell device is a kind of effectively detection calcium to reflect the characteristic and size of device ysteresis effect
The characterization method of titanium ore solar battery.
Detailed description of the invention
Fig. 1 is the capacitive property detection method flow diagram of photoelectric device provided in an embodiment of the present invention；
Fig. 2 is the cyclic voltammetry dark current curve of normal ysteresis effect device provided in an embodiment of the present invention；
Fig. 3 is the cyclic voltammetry dark current curve of no ysteresis effect device provided in an embodiment of the present invention；
Fig. 4 is the cyclic voltammetry dark current curve of reversion ysteresis effect device provided in an embodiment of the present invention.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, with reference to the accompanying drawings and embodiments, right
The present invention is further elaborated.It should be appreciated that described herein, specific examples are only used to explain the present invention, not
For limiting the present invention.
Fig. 1 is the capacitive property detection method flow diagram of photoelectric device provided in an embodiment of the present invention, comprising: step
S101 to step S102.
S101 determines that test voltage, the test voltage are used for the capacitive property of testing photoelectronic device, the test voltage
Since starting voltage, continuously to rise to final voltage, the test voltage is since the final voltage immediately, under continuous
Being down to starting voltage terminates, and the rate that the test voltage rises is identical with the rate of decline.
S102, by the both ends of the test voltage loading to photoelectric device, according to the variation of test electric current and test voltage
Relationship determines the capacitive property of the photoelectric device, and the test electric current is in the test voltage consecutive variations during institute
The electric current flowed through on photoelectric device is stated, the photoelectric device is placed in the environment of not illumination.
Optionally, during the test voltage consecutive variations, the test electric current flowed through on the photoelectric device is determined,
It calculates test current density and tests the logarithm of current density；Using the logarithm of logarithmic coordinates system characterization test current density
The variation relation of value and test voltage；Determine in the logarithmic coordinates system that test voltage rises to the termination electricity from starting voltage
Pressure tests the first sampled voltage of the logarithm variation maximum of current density in the process, and determines that test voltage is electric from terminating
The second sampled voltage that the starting voltage tests the logarithm variation maximum of current density in the process is down in pressure；According to institute
The difference for stating the first sampled voltage and the second sampled voltage determines the capacitive reactance of the photoelectric device, the difference and the phototube
The capacitive reactance of part is inversely proportional, the capacitive reactance of the photoelectric device respectively with the climbing speed of the test voltage and the photoelectric device
Capacitance is inversely proportional.
Difference between first sampled voltage and the second sampled voltage is smaller, illustrates each interface charge transmission of device inside
Rate more matches, and capacitive reactance is bigger, and capacitance characteristic is smaller, illustrates that the capacitive property of photoelectric device is better.
Optionally, the capacitance of the photoelectric device is determined according to the climbing speed of the difference and the test voltage,
When the capacitance of the photoelectric device is less than first threshold, the capacitive property of the photoelectric device meets preset requirement.
Wherein, the difference of corresponding first sampled voltage of first threshold and the second sampled voltage can be 0~0.2mV.?
It can be selected according to actual needs.
Optionally, the photoelectric device is perovskite solar battery comprising normal ysteresis effect device is imitated without hysteresis
Answer device and reversion ysteresis effect device.
Optionally, the capacitor value of normal ysteresis effect device and reversion ysteresis effect device is upper with the test voltage
The increase of raising speed rate and become smaller.
Optionally, the climbing speed of the test voltage is 1mV/s~500mV/s.Specifically, the upper raising speed of test voltage
Rate can be 10mv/s, 20mv/s, 50mv/s or 100mv/s.
Optionally, starting voltage is less than -0.5V, and the final voltage is greater than 0.5V, such as starting voltage and final voltage
The variation range of respectively -1V and 1V, starting voltage and final voltage need to meet the capacitance characteristic that can test photoelectric device.
Detection technique scheme of the invention is illustrated below in conjunction with specific embodiment:
Instrument used in characterization method is electrochemical workstation, and photoelectric device is placed under dark-state, starting voltage is set as-
1V, medium voltage are set as 0V, and final voltage is set as 1V, then set test voltage and rise or fall rate, also are understood as electricity
Press scanning speed.Voltage scan rate is chosen as 10mv/s, 20mv/s, 50mv/s, 100mv/s.Finally selecting scanning times is 4
Secondary, each sweep test voltage rises to 1V from -1V, then drops to -1V from 1V and terminate.4 times different voltages scanning speed is continuous
Scanning, the time interval of adjacent twice sweep are 0s-600s.So as to restore photoelectric device after to photoelectric device run-down
To reset condition, then start to scan next time again.
The dark current data of perovskite solar battery is measured, and the dark current that data are tested is handled by Origin
After data, data are indicated using the representation method of logarithmic coordinates system, analyze and symbolize photoelectric device capacity effect.It first will just
Normal ysteresis effect device is placed under dark-state, and instrument and parameter is arranged according to above-mentioned scanning process.The sample is measured four times
Obtain whole test results.Test result is placed in Origin to be indicated using logarithmic coordinates system, obtains partial trace image, because
It is only able to display positive value for the ordinate of logarithmic coordinates system, therefore, corresponding electric current is negative value under -1~0V voltage, bent in the picture
Line can not display, therefore by the current value measured under -1~0V voltage multiplied by -1, can be allowed to display in a coordinate system,
The image ordinate value display direction is overturned afterwards, and symbol is added, two curve graphs can be combined into a complete circulation
The dark current curve graph that voltammetry measures, the cyclic voltammetry dark current curve of normal ysteresis effect device as shown in Fig. 2.
For example, shown in Fig. 2, different test voltages rise or fall under rate (10mv/s, 20mv/s, 50mv/s or
100mv/s) the first sampled voltage is about respectively -0.3mv, -0.35mv, -0.45mv or 0.5mv, and the second sampled voltage is each about
0.25mv.Wherein, different test voltages rise or fall under rate under (10mv/s, 20mv/s, 50mv/s or 100mv/s)
The difference of one sampled voltage and the second sampled voltage increases with the increase of test voltage rate of change, be reflected as capacitive reactance with
The increase of test voltage rate of change and reduce.
With logarithmic coordinates system indicate be because logarithmic coordinates system can be more obvious the comparison for representing numerical value.Because
There is no illumination, no photogenerated current under dark-state, solar cell device dark current changes more single.Therefore its current value is in difference
Comparison under voltage scan rate is more regular in logarithmic coordinates system.
Without ysteresis effect device as normal ysteresis effect testing process, device is placed in after dark-state and is connected with test equipment
It connecing, starting voltage is set as 1V, medium voltage is set as -1V, and final voltage is set as 1V, then sets voltage scan rate, according to
It needs and instrument sweeps fast range, be set as 10mV/s, 20mV/s, 50mV/s, tetra- kinds of conditions of scanning of 100mV/s.Data processing
Method is same as above, Fig. 3 for no ysteresis effect device cyclic voltammetry dark current curve.This kind of device capacitor effect can be released by Fig. 3
Should be more small and weak, its ysteresis effect also levels off to very little.
It is consistent with both the above device detection process to invert ysteresis effect device, reversion ysteresis effect device is placed in dark-state
It is connected down and with test macro, starting voltage is set as 1V, medium voltage is set as -1V, and final voltage is set as 1V, then setting electricity
Sweep speed is pressed, it is as needed and instrument to sweep fast range, it is set as 10mV/s, 20mV/s, 50mV/s, tetra- kinds of 100mV/s are swept
Retouch condition.Data processing is identical as both the above types of devices image processing method, and Fig. 4 is the circulation for inverting ysteresis effect device
Voltammetry dark current curve.In fig. 4, it is seen that the dark current curve of test is entirely two poles in different sweep under speed
The VA characteristic curve of pipe, because the attainable short-circuit current density value of its highest is lower than 10-6mA/cm-2, be three among most
Small value.It is learnt from Fig. 2-Fig. 4, the same curve swept under speed can have two tangent lines point parallel with current density reference axis,
The two put corresponding voltage difference range in 0~0.2mV, it is believed that the device capacitor effect is smaller, and device performance is more good
It is good.And choose when sweeping speed, choose as far as possible it is slower sweep speed, minimum can reduce for the damage of device.
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should all include
Within protection scope of the present invention.
Claims (6)
1. a kind of capacitive property detection method of photoelectric device characterized by comprising
Determine that test voltage, the test voltage are used for the capacitive property of testing photoelectronic device, the test voltage is from starting
Voltage starts, and continuously rises to final voltage, and the test voltage continuously drops to starting since the final voltage immediately
Voltage terminates, and the rate that the test voltage rises is identical with the rate of decline；
By the both ends of the test voltage loading to photoelectric device, institute is determined according to the variation relation of test electric current and test voltage
The capacitive property of photoelectric device is stated, the test electric current is the photoelectric device during test voltage consecutive variations
On the electric current that flows through, the photoelectric device is placed in the environment of not illumination；
The capacitive property of the photoelectric device is determined according to the variation relation of test electric current and test voltage, comprising:
During the test voltage consecutive variations, the test electric current flowed through on the photoelectric device is determined, calculate test electricity
Current density and the logarithm for testing current density；
Using the logarithm of logarithmic coordinates system characterization test current density and the variation relation of test voltage；
Determine that it is close to test electric current during rising to the final voltage from starting voltage for test voltage in the logarithmic coordinates system
First sampled voltage of the logarithm variation maximum of degree, and determine that test voltage drops to the starting electricity from final voltage
Second sampled voltage of the logarithm variation maximum of test current density during pressure；
Determine the capacitive reactance of the photoelectric device according to the difference of first sampled voltage and the second sampled voltage, the difference with
The capacitive reactance of the photoelectric device is inversely proportional, the capacitive reactance of the photoelectric device respectively with the climbing speed of the test voltage and described
The capacitance of photoelectric device is inversely proportional.
2. capacitive property detection method according to claim 1, which is characterized in that according to the difference and test electricity
The climbing speed of pressure determines the capacitance of the photoelectric device, when the capacitance of the photoelectric device is less than first threshold, institute
The capacitive property for stating photoelectric device meets preset requirement.
3. capacitive property detection method according to claim 1 or 2, which is characterized in that the photoelectric device is perovskite
Solar battery comprising normal ysteresis effect device, without ysteresis effect device and reversion ysteresis effect device.
4. capacitive property detection method according to claim 3, which is characterized in that normal ysteresis effect device and reversion are stagnant
The capacitor value for returning effect device becomes smaller with the increase of the climbing speed of the test voltage.
5. capacitive property detection method according to claim 4, which is characterized in that the climbing speed of the test voltage is
1mV/s~500mV/s.
6. capacitive property detection method according to claim 1, which is characterized in that the starting voltage is less than -0.5V, institute
Final voltage is stated greater than 0.5V.
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| CN108923750B (en) * | 2018-08-22 | 2020-12-18 | 中国科学院上海微系统与信息技术研究所 | Method for testing capacitance-voltage characteristic curve of photovoltaic device |
| CN109753678B (en) * | 2018-11-17 | 2020-07-10 | 华中科技大学 | Method for calibrating volt-ampere characteristic curve of solar cell |
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Patent Citations (7)
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| CN1538187A (en) * | 2003-10-23 | 2004-10-20 | 上海交通大学 | Single flash testing instrument of film solar battery assembly |
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