CN111426931A - IGBT device testing device, IGBT device testing method and electronic equipment - Google Patents

IGBT device testing device, IGBT device testing method and electronic equipment Download PDF

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Publication number
CN111426931A
CN111426931A CN202010322303.0A CN202010322303A CN111426931A CN 111426931 A CN111426931 A CN 111426931A CN 202010322303 A CN202010322303 A CN 202010322303A CN 111426931 A CN111426931 A CN 111426931A
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igbt device
values
groups
tested
contact
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张西子
张喆
吴军民
唐新灵
林仲康
王亮
石浩
韩荣刚
杜玉杰
孙帅
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State Grid Corp of China SGCC
State Grid Zhejiang Electric Power Co Ltd
Global Energy Interconnection Research Institute
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State Grid Corp of China SGCC
State Grid Zhejiang Electric Power Co Ltd
Global Energy Interconnection Research Institute
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Priority to CN202010322303.0A priority Critical patent/CN111426931A/en
Publication of CN111426931A publication Critical patent/CN111426931A/en
Priority to CN202010797186.3A priority patent/CN111693844B/en
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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Abstract

The invention relates to the technical field of semiconductors, in particular to a testing device, a testing method and electronic equipment of an IGBT device, wherein the testing device comprises: the pressure sensor is used for detecting a plurality of groups of contact pressure values applied to the IGBT device to be detected; the two ends of the voltmeter are respectively connected with the collector electrode and the emitter electrode of the IGBT device to be detected and are used for detecting a plurality of groups of on-state voltage drop values between the collector electrode and the emitter electrode of the IGBT device to be detected; the fixed current source is respectively connected with the collector and the emitter of the IGBT device to be tested and is used for providing fixed current for the IGBT device to be tested; and the processor is connected with the pressure sensor and the voltmeter and is used for calculating the contact resistance value of the IGBT device to be tested by utilizing the multiple groups of contact pressure values, the multiple groups of on-state voltage drop values, the fixed current and the pressing area. The testing device of the IGBT device provided by the invention obtains the contact resistance value by utilizing a plurality of groups of on-state voltage drop values, fixed currents and pressing areas, does not need to measure the microscopic parameters of the IGBT device, and is simple in testing and easy to operate.

Description

IGBT device testing device, IGBT device testing method and electronic equipment
Technical Field
The invention relates to the technical field of semiconductors, in particular to a testing device and a testing method of an IGBT device and electronic equipment.
Background
An Insulated Gate Bipolar Transistor (IGBT) is a core device of flexible dc power transmission equipment. The crimping type IGBT device directly contacts the conductive metal electrode with the collector and the emitter of the device respectively through mechanical pressure, so that a bonding wire in a packaging structure is eliminated, and the crimping type IGBT device has the advantages of low parasitic inductance, compact structure, failure short circuit, double-sided heat dissipation and the like, and is particularly suitable for being applied to power system equipment.
Due to the packaging structure characteristics of the crimping type IGBT device, each device needs to bear certain mechanical stress to keep good electrical contact. However, due to certain differences in the flatness and thickness accumulated tolerance of the sub-units of the devices, mechanical stress borne by each device is inconsistent, so that differences exist in the electrical characteristics of the parallel devices, and finally the overall electrical performance and reliability of the devices are reduced.
Fig. 1 shows a cross section from a crimped IGBT device, in frame with the device surface metallization, the image showing that the metallized surface is not flat. The actual physical contact during crimping therefore does not occur over the entire surface, but rather in a limited area, the extent of which depends largely on the mechanical pressure applied.
According to experimental test results (as shown in fig. 2), the IGBT device has lower on-state voltage drop when the pressure is higher in a pressure range that the device can bear, and the device is damaged when the pressure of the device exceeds the bearing range; within the normal working pressure range, the resistance value of the IGBT device is extremely small and negligible along with the variation of pressure, and the surface contact resistance of the device is obvious along with the variation of pressure, so that the on-state voltage drop of the crimping IGBT device is influenced.
At present, the contact resistance measurement and calculation method is mainly based on Cooper-Mikic-Yovenovich (CMY) theory, which is mainly used for explaining the contact characteristics of an isotropic rough surface, correlating the roughness of a contact surface with a pressure load, and carrying out equivalent treatment on the contact surface so as to obtain the contact conductance and indirectly obtain the belt contact resistance, as shown in FIG. 3.
The contact resistance calculated by the method has high accuracy, but because the method needs to measure the micro parameters such as equivalent root-mean-square surface roughness of a contact surface, equivalent average absolute surface inclination, harmonic mean of contact interface thermal conductivity, microhardness of relatively soft materials of two contact materials and the like, the micro parameters are difficult to measure accurately, and the measuring means is complex, so that the measuring cost of the contact resistance is high.
Disclosure of Invention
In view of this, embodiments of the present invention provide a testing apparatus and a testing method for an IGBT device, and an electronic device, so as to solve the problems of difficulty in testing a contact resistance and complicated measurement.
According to a first aspect, an embodiment of the present invention provides a testing apparatus for an IGBT device, including:
the pressure sensor is used for detecting a plurality of groups of contact pressure values applied to the IGBT device to be detected, and each group of contact pressure values corresponds to the same applied area;
the two ends of the voltmeter are respectively connected with the collector electrode and the emitter electrode of the IGBT device to be detected, and the voltmeter is used for detecting a plurality of groups of on-state voltage drop values between the collector electrode and the emitter electrode of the IGBT device to be detected under the plurality of groups of contact pressure values;
the fixed current source is respectively connected with the collector electrode and the emitter electrode of the IGBT device to be tested and is used for providing fixed current for the IGBT device to be tested;
and the processor is connected with the pressure sensor and the voltmeter and is used for calculating the contact resistance value of the IGBT device to be tested by utilizing the multiple groups of contact pressure values, the multiple groups of on-state voltage drop values, the fixed current and the pressing area.
Optionally, the fixed current source comprises: one end of the inductor is connected with the collector electrode of the IGBT device to be tested; and the positive electrode of the voltage source is connected with the other end of the inductor, and the negative electrode of the voltage source is connected with the emitting electrode of the IGBT device and used for providing fixed voltage.
Optionally, the testing apparatus further comprises: and the driving circuit comprises a driving power supply and a resistor, and the anode of the driving power supply is connected with the grid electrode of the IGBT device to be tested through the resistor and is used for providing driving voltage for the IGBT device to be tested.
Optionally, the pressure sensor is mounted on a test fixture, and the IGBT device to be tested is also mounted on the test fixture.
The IGBT device testing device provided by the embodiment of the invention detects a plurality of groups of contact pressure values applied on the IGBT device to be tested through the pressure sensor, the voltmeter detects a plurality of groups of on-state voltage drop values between the collector electrode and the emitter electrode of the IGBT device to be tested, the fixed current source provides fixed current for the IGBT device to be tested, the processor calculates the contact resistance value of the IGBT device to be tested by utilizing the plurality of groups of contact pressure values, the plurality of groups of on-state voltage drop values, the fixed current and the contact area, and the measurement on the micro parameters such as equivalent square root mean surface roughness, equivalent average absolute surface gradient, contact interface heat conductivity average, and the micro hardness of the relatively soft materials of the two contact materials is not needed, so that the test is simpler, and multiple test errors caused by the fact that the micro parameters are not easy to measure accurately are avoided, the IGBT device to be tested has more accurate test result.
According to a second aspect, an embodiment of the present invention provides a method for testing an IGBT device, including:
acquiring a plurality of groups of contact pressure values applied to the IGBT device to be tested, wherein each group of contact pressure values correspond to the same pressure application area;
acquiring multiple groups of on-state pressure drop values between the collector and the emitter of the IGBT device to be tested under the multiple groups of contact pressure values, wherein the multiple groups of contact pressure values correspond to the multiple groups of on-state pressure drop values one to one;
obtaining a fixed current passing through the IGBT device to be tested;
calculating by using the multiple groups of contact pressure values, the multiple groups of on-state pressure drop values, the pressure application area and the fixed current according to a preset calculation formula to obtain a test parameter; the test parameters are used for representing a calculation coefficient between a contact resistance value, a pressure application area and a contact pressure value of the IGBT device to be tested;
and calculating the contact resistance value of the IGBT device to be tested by utilizing the numerical relation among the test parameters, the pressure application area, the contact pressure value and the contact resistance value.
Optionally, the calculating the test parameters according to a preset calculation formula by using the multiple sets of contact pressure values, the multiple sets of on-state voltage drop values, the pressing area, and the fixed current includes: calculating to obtain a plurality of groups of initial values of test parameters according to a preset calculation formula by using the plurality of groups of contact pressure values, the plurality of groups of on-state pressure drop values, the pressure applying area and the fixed current; and averaging the plurality of groups of test parameter initial values to obtain the test parameters.
Optionally, the calculating, according to a preset calculation formula, multiple sets of initial values of the test parameters by using the multiple sets of contact pressure values, the multiple sets of on-state voltage drop values, the pressure applying area, and the fixed current includes:
determining all parameter calculation groups from the multiple groups of contact pressure values and the multiple groups of on-state pressure drop values, wherein each parameter calculation group comprises two groups of contact pressure values and on-state pressure drop values corresponding to the two groups of contact pressure values, and calculating through a preset formula
Figure BDA0002461897420000041
Each test parameter initial value:
Figure BDA0002461897420000042
wherein K is the initial value of the test parameter, Vcei、VcejRespectively the ith and jth on-state voltage drop values, I is the fixed current, A is the area to be pressed, Fi、FjRespectively the ith and jth groups of contact pressure values, n represents the number of groups of contact pressure values or passband pressure drop values, i is more than or equal to 1 and less than or equal to n, and j is more than or equal to 1 and less than or equal to n.
Alternatively, the contact resistance value is calculated by the following formula:
Figure BDA0002461897420000043
wherein R isSTo contact resistance value, K1For testing parameters, A is the area of the pressure contact surface of the IGBT device to be tested, and F is the contact pressure value arbitrarily applied to the IGBT device to be tested.
According to the test method of the IGBT device, provided by the embodiment of the invention, the contact resistance value of the IGBT device to be tested is calculated and obtained by utilizing the mathematical relationship among the test parameters, the pressure application area, the contact pressure value and the contact resistance value, wherein the test parameters are calculated according to the preset calculation formula through a plurality of groups of contact pressure values, a plurality of groups of on-state pressure drop values, the pressure application area and the fixed current, so that the problems that in the traditional test, the specific value of the test parameter is influenced by the micro parameters such as the equivalent square root-mean-surface roughness of the pressure contact surface of the IGBT device to be tested, the equivalent mean-absolute surface slope, the harmonic mean of the contact interface thermal conductivity, the micro hardness of two contact materials relative to a softer material and the like, the direct.
In addition, the invention exhales two groups of contact pressure values and corresponding on-state pressure drop values from the sets of the contact pressure values and the on-state pressure drop values, and the contact pressure values and the corresponding on-state pressure drop values are calculated by a preset formula to obtain
Figure BDA0002461897420000044
The initial value of the test parameter fully utilizes the test data, so that the calculated initial value of the test parameter is more accurate, and a basis is provided for the calculation of the subsequent contact resistance.
According to a third aspect, an embodiment of the present invention provides an electronic device, including: the testing method of the IGBT device according to any one of the embodiments of the second aspect or the second aspect is implemented by executing the computer instructions.
According to a fourth aspect, the embodiment of the present invention provides a computer-readable storage medium, which stores computer instructions for causing the computer to execute the testing method of the IGBT device according to the second aspect or any one of the embodiments of the second aspect.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a microscopic schematic of a cross-section of an IGBT device;
FIG. 2 is a microscopic level equivalent processing diagram of the pressure contact surface of the IGBT device;
FIG. 3 is a schematic diagram of the on-state voltage drop of an IGBT device as a function of pressure;
fig. 4 is a schematic structural diagram of a testing apparatus for an IGBT device according to an embodiment of the present invention;
fig. 5 is a schematic diagram of a complete structure of a testing apparatus for an IGBT device according to an embodiment of the present invention;
fig. 6 is a flowchart of a testing method of an IGBT device provided according to an embodiment of the present invention;
fig. 7 is a complete flow chart of a testing method of an IGBT device provided according to an embodiment of the present invention;
fig. 8 is a schematic diagram of a hardware structure of an electronic device according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The traditional calculation of the contact resistance of the IGBT device usually needs to measure the microcosmic parameters such as equivalent root-mean-square surface roughness of a pressure contact surface, equivalent average absolute surface gradient, harmonic mean of contact interface thermal conductivity, microhardness of two relatively soft materials of contact materials and the like, the microcosmic parameters are difficult to measure accurately, the measuring means is complex, and larger measuring errors and higher measuring cost are brought to the contact resistance test.
The inventor utilizes the on-state voltage drop of the IGBT device to obtain the combined parameters of the micro parameters, eliminates multiple measurement errors caused by measuring each micro parameter in the traditional calculation of the contact resistance of the IGBT device, ensures the calculation accuracy of the contact resistance of the IGBT device, and comprises the following specific processes:
contact conductance hSThe calculation formula of (2) is as follows:
Figure BDA0002461897420000061
wherein p is a contact pressure; sigma is equivalent root mean square surface roughness; m is the equivalent average absolute surface slope; k is a radical ofsIs a harmonic mean of the contact interface thermal conductivity; hc is the microhardness of the relatively softer material of the two contact materials.
Contact resistance RSFor conducting electricity h to the contactSThe reciprocal of (a), namely:
Figure BDA0002461897420000062
in the formula (2), the contact pressure p can be calculated as:
Figure BDA0002461897420000063
wherein F is the pressure applied to the IGBT device, and A is the area of the pressure contact surface of the IGBT device.
Substituting the formula (3) into the formula (2) can obtain the contact resistance RSComprises the following steps:
Figure BDA0002461897420000064
wherein the measuring process of the contact area A and the pressure F is simple and easy to obtain, and k issM, σ and HcThe measurement process of (a) is complicated and large errors are easily generated in the measurement process, and therefore, equation (4) is simplified as follows:
Figure BDA0002461897420000065
Figure BDA0002461897420000066
when fixed current is conducted to the IGBT device and n different contact pressure values are applied to the IGBT device, n on-state voltage drop values V can be obtainedce1……Vcen(ii) a Two groups of data are arbitrarily taken, and the following data can be obtained:
Vcei＝I(R+RSi) (7)
Vcej＝I(R+RSj) (8)
wherein i and j respectively represent the ith group of data and the jth group of data, R is the body resistance of the IGBT device, and the variation of the body resistance R along with the pressure F is extremely small and can be ignored within a normal pressure range; rsThe contact resistance is obvious along with pressure change.
Subtracting equation (8) from equation (7) yields:
Vcei-Vcej＝I(RSi-RSj) (9)
substituting equation (5) into equation (9) yields:
Figure BDA0002461897420000071
wherein, Vcei、VcejA and F are known quantities, and K is found to be:
Figure BDA0002461897420000072
from the above n different pressure values F1、F2……FnAnd a corresponding on-state voltage drop value Vce1、Vce2……VcenTwo groups of the Chinese character Zhong ren (F)i,Vi) And (F)j,Vj) By substituting the formula (11), the compound can be obtained
Figure BDA0002461897420000073
An initial K value, and then adding the said
Figure BDA0002461897420000074
Averaging the initial K values to obtain more accurate K value which is recorded as K1Then adding said K1Substituting the value into a formula (5) to obtain a relational expression of the contact resistance and the pressure of the IGBT device.
According to a first aspect, an embodiment of the present invention provides a testing apparatus for an IGBT device, as shown in fig. 4, the testing apparatus includes: the pressure sensor 10 is used for detecting a plurality of groups of contact pressure values applied to the IGBT device to be detected, and each group of contact pressure values corresponds to the same pressure application area; a voltmeter 20, two ends of which are respectively connected with the collector and the emitter of the IGBT device to be tested, for detecting multiple sets of on-state voltage drop values between the collector and the emitter of the IGBT device to be tested under the multiple sets of contact pressure values; the fixed current source 30 is respectively connected with the collector and the emitter of the IGBT device to be tested and is used for providing fixed current for the IGBT device to be tested; and the processor 40 is connected with the pressure sensor 10 and the voltmeter 20 and is used for calculating the contact resistance value of the IGBT device to be tested by utilizing the multiple groups of contact pressure values, the multiple groups of on-state voltage drop values, the fixed current and the pressing area.
Fig. 4 is a schematic structural diagram of an IGBT device testing apparatus provided according to an embodiment of the present invention, and as shown in fig. 4, the testing apparatus includes a pressure sensor 10, a voltmeter 20, a fixed current source 30, and a processor 40, the pressure sensor 10 is disposed on a lower surface of a bearing surface (not shown in upper and lower surface diagrams of the bearing surface) of the IGBT device to be tested, the IGBT device to be tested is fixedly disposed on the bearing surface, the pressure sensor 10 is configured to detect multiple sets of contact pressure values applied to the IGBT device to be tested, and in a testing process, the multiple sets of contact pressure applied to the IGBT device to be tested are completed at the same position by the same machine, so that the multiple sets of contact pressure values may correspond to the same pressing area.
Two ends of the voltmeter 20 are respectively connected with the collector and the emitter of the IGBT device to be tested, and are configured to detect multiple sets of on-state voltage drop values between the collector and the emitter of the IGBT device to be tested under the multiple sets of contact pressure values, it is conceivable that the voltmeter 20 may also be another device capable of achieving on-state voltage drop acquisition, and no limitation is made herein; the positive electrode of the fixed current source 30 is connected with the collector of the to-be-tested IGBT device, and the negative electrode of the fixed current source is connected with the emitter and used for providing fixed current for the to-be-tested IGBT device.
The input end of the processor 40 is connected to the output ends of the pressure sensor 10 and the voltmeter 20, and the contact resistance value of the IGBT device to be measured is calculated by using the multiple sets of contact pressure values, the multiple sets of on-state voltage drop values, the fixed current and the applied area, wherein the fixed current can be preset in the processor 40 in advance, and the contact area can be measured in advance and preset in the processor 40.
Alternatively, as shown in fig. 5, the fixed current source 30 includes: one end of the inductor 31 is connected with the collector of the IGBT device to be tested; and a voltage source 32, the anode of which is connected with the other end of the inductor, and the cathode of which is connected with the emitter of the IGBT device, and is used for providing fixed voltage.
Fig. 5 is a schematic diagram of a complete structure of a testing apparatus for an IGBT device according to an embodiment of the present invention, and as shown in fig. 5, the fixed current source 30 may include an inductor 31 and a voltage source 32, wherein an anode of the voltage source 32 is connected to a collector of the IGBT device to be tested through the inductor 31, and a cathode thereof is connected to an emitter. As is clear from the series characteristics of the inductor and the voltage source, the current is rated constant in the loop of the collector, the emitter, the inductor 31, and the voltage source 32 is a dc voltage source.
Optionally, as shown in fig. 5, the test apparatus further includes a driving circuit 50, where the driving circuit 50 includes a driving power supply 51 and a resistor 52, and an anode of the driving power supply 51 is connected to a gate of the IGBT device to be tested through the resistor 52, and is configured to provide a driving voltage to the IGBT device to be tested.
Referring to fig. 5 again, the driving circuit 50 includes a driving power supply 51 and a resistor 52, and the driving power supply 51 is connected in series with the resistor 52 and then connected to the gate and the emitter of the IGBT device to be tested, so as to provide a driving voltage for the IGBT device to be tested. In order to reduce the loss of the to-be-detected IGBT device in the turn-off process, the driving power supply 51 can be set to be an adjustable power supply, an ammeter can be connected to the driving circuit 50 to detect the current of the gate of the to-be-detected IGBT device in real time, and the voltage of the adjustable power supply is adjusted to enable the variation of the gate current to be within a preset range, so that the loss of the to-be-detected IGBT device is reduced.
Alternatively, as shown in fig. 5, the pressure sensor 10 is mounted on a test fixture 60, and the IGBT device to be tested is also mounted on the test fixture 60.
As shown in fig. 5, the test fixture 60 is provided with a bayonet, which is provided with interfaces of the gate, the collector, and the emitter, and when testing, only the IGBT device to be tested needs to be placed in the bayonet, and then the pins of the gate, the collector, and the emitter are connected with the corresponding interfaces. The pressure sensor 10 is arranged below the surface of the IGBT device to be detected, which is borne by the bayonet, so that the contact pressure applied to the IGBT device to be detected can be detected. It should be noted that the structure of the test fixture 60 is not limited to that shown in fig. 5, as long as the IGBT device to be tested can be fixed and can be loaded to complete the test, and the structure is not limited herein.
The IGBT device testing device provided by the embodiment of the invention detects a plurality of groups of contact pressure values applied on the IGBT device to be tested through the pressure sensor, the voltmeter detects a plurality of groups of on-state voltage drop values between the collector electrode and the emitter electrode of the IGBT device to be tested, the fixed current source provides fixed current for the IGBT device to be tested, the processor calculates the contact resistance value of the IGBT device to be tested by utilizing the plurality of groups of contact pressure values, the plurality of groups of on-state voltage drop values, the fixed current and the contact area, and the measurement on the micro parameters such as equivalent square root mean surface roughness, equivalent average absolute surface gradient, contact interface heat conductivity average, and the micro hardness of the relatively soft materials of the two contact materials is not needed, so that the test is simpler, and multiple test errors caused by the fact that the micro parameters are not easy to measure accurately are avoided, the IGBT device to be tested has more accurate test result.
According to a second aspect, there is provided an embodiment of a method for testing an IGBT device, it is noted that the steps illustrated in the flowchart of the drawings may be performed in a computer system such as a set of computer executable instructions, and that while a logical order is illustrated in the flowchart, in some cases the steps illustrated or described may be performed in an order different than here.
In the present embodiment, a method for testing an IGBT device is provided, which can be used in the above electronic device, and fig. 6 is a flowchart of a method for testing an IGBT device according to an embodiment of the present invention, as shown in fig. 6, the flowchart includes the following steps:
and S11, acquiring multiple groups of contact pressure values applied to the IGBT device to be tested. Each group of the contact pressure values corresponds to the same pressing area.
The multiple groups of contact pressure values which are acquired by the electronic equipment and applied to the IGBT device to be tested can be detected in real time by a pressure sensor arranged below the bearing surface of the IGBT device to be tested; or the plurality of sets of contact pressure values stored in the electronic device; or, the electronic device acquires the multiple sets of contact pressure values from the outside in other manners. No matter what way the electronic equipment obtains the multiple groups of contact pressure values, only the electronic equipment needs to be ensured to obtain the multiple groups of contact pressure values.
And S12, acquiring multiple groups of on-state voltage drop values between the collector and the emitter of the IGBT device to be tested under the multiple groups of contact pressure values. The multiple groups of contact pressure values correspond to the multiple groups of on-state pressure drop values one by one.
The multiple groups of on-state voltage drop values acquired by the electronic equipment can be detected in real time by a voltmeter or a voltage acquisition device arranged between the collector and the emitter of the IGBT device to be detected; or the plurality of sets of on-state voltage drop values stored in the electronic device; or, the electronic device obtains the multiple sets of on-state voltage drop values from the outside in other manners. No matter what way the electronic equipment obtains the multiple groups of on-state voltage drop values, only the electronic equipment needs to be ensured to obtain the multiple groups of on-state voltage drop values.
And S13, obtaining the fixed current passing through the IGBT device to be tested.
The fixed current acquired by the electronic equipment can be detected by an ammeter or a current acquisition device arranged between a collector and an emitter of the IGBT device to be detected; the fixed current stored in the electronic device; or, the electronic device may obtain the fixed current from the outside in other manners. No matter what way the electronic equipment obtains the fixed current, only the electronic equipment needs to be ensured to obtain the fixed current.
And S14, calculating to obtain test parameters according to a preset calculation formula by using the multiple groups of contact pressure values, the multiple groups of on-state pressure drop values, the pressure application area and the fixed current.
The test parameters are used for representing a calculation coefficient between a contact resistance value, a pressure application area and a contact pressure value of the IGBT device to be tested.
Specifically, the test parameters comprise microscopic parameters such as equivalent root-mean-square surface roughness of the pressure contact surface of the IGBT device, equivalent average absolute surface slope, harmonic mean of contact interface thermal conductivity, and microhardness of relatively soft materials of two contact materials.
And S15, calculating the contact resistance value of the IGBT device to be tested by using the numerical relationship among the test parameters, the pressing area, the contact pressure value and the contact resistance value.
Specifically, the contact resistance value of the IGBT device to be tested is obtained by substituting the test parameters, the pressure application area, and the contact pressure value into the following formula:
Figure BDA0002461897420000111
wherein R isSTo contact resistance value, K1For testing parameters, A is the area of the pressure contact surface of the IGBT device to be tested, and F is the contact pressure value arbitrarily applied to the IGBT device to be tested.
Alternatively, as shown in fig. 7, the S14 may include:
and S141, calculating to obtain a plurality of groups of initial values of the test parameters according to a preset calculation formula by using the plurality of groups of contact pressure values, the plurality of groups of on-state pressure drop values, the pressing area and the fixed current.
Specifically, all parameter calculation groups are determined from the multiple groups of contact pressure values and the multiple groups of on-state pressure drop values, each parameter calculation group comprises two groups of contact pressure values and corresponding on-state pressure drop values, and the preset formula is used for calculating
Figure BDA0002461897420000112
Each test parameter initial value:
Figure BDA0002461897420000113
wherein K is the initial value of the test parameter, Vcei、VcejRespectively the ith and jth on-state voltage drop values, I is the fixed current, A is the area to be pressed, Fi、FjRespectively the ith and jth groups of contact pressure values, n represents the number of groups of contact pressure values or passband pressure drop values, i is more than or equal to 1 and less than or equal to n, and j is more than or equal to 1 and less than or equal to n.
In one embodiment, the test yields 5 sets of contact pressure values and their corresponding 5 sets of on-state pressure drop values, forming the set from which any two sets of contact pressure values and on-state pressure drop values, i.e., (F)i,Vi) And (F)j,Vj) To obtain
Figure BDA0002461897420000114
The contact pressure value and the on-state pressure drop value of each combination are calculated through the preset formula to obtain the combination
Figure BDA0002461897420000115
An initial value of each test parameter.
And S142, averaging the plurality of groups of test parameter initial values to obtain the test parameters.
Specifically, the method obtained in S141
Figure BDA0002461897420000116
And summing the initial values of the test parameters, and then averaging to obtain the test parameters.
In one embodiment, the above is performed
Figure BDA0002461897420000117
And summing the initial values of the test parameters, and then averaging to obtain the test parameters.
According to the test method of the IGBT device, provided by the embodiment of the invention, the contact resistance value of the IGBT device to be tested is calculated and obtained by utilizing the mathematical relationship among the test parameters, the pressure application area, the contact pressure value and the contact resistance value, wherein the test parameters are calculated according to the preset calculation formula through a plurality of groups of contact pressure values, a plurality of groups of on-state pressure drop values, the pressure application area and the fixed current, so that the problems that in the traditional test, the specific value of the test parameter is influenced by the micro parameters such as the equivalent square root-mean-surface roughness of the pressure contact surface of the IGBT device to be tested, the equivalent mean-absolute surface slope, the harmonic mean of the contact interface thermal conductivity, the micro hardness of two contact materials relative to a softer material and the like, the direct.
In addition, the invention exhales two groups of contact pressure values and corresponding on-state pressure drop values from the sets of the contact pressure values and the on-state pressure drop values, and the contact pressure values and the corresponding on-state pressure drop values are calculated by a preset formula to obtain
Figure BDA0002461897420000121
Each test parameter initial value makes full use of test data to calculate the test parameter initial valueMore accurate, and provides a basis for the calculation of the subsequent contact resistance.
According to a third aspect, an embodiment of the present invention provides an electronic device, please refer to fig. 8, fig. 8 is a schematic structural diagram of an electronic device according to an alternative embodiment of the present invention, and as shown in fig. 8, the electronic device may include: at least one processor 71, such as a CPU (Central Processing Unit), at least one communication interface 73, memory 74, at least one communication bus 72. Wherein a communication bus 72 is used to enable the connection communication between these components. The communication interface 73 may include a Display (Display) and a Keyboard (Keyboard), and the optional communication interface 73 may also include a standard wired interface and a standard wireless interface. The Memory 74 may be a high-speed RAM Memory (volatile Random Access Memory) or a non-volatile Memory (non-volatile Memory), such as at least one disk Memory. The memory 74 may alternatively be at least one memory device located remotely from the processor 71. An application program is stored in the memory 74 and the processor 71 calls the program code stored in the memory 74 for performing any of the method steps described above.
The communication bus 72 may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus. The communication bus 72 may be divided into an address bus, a data bus, a control bus, and the like. For ease of illustration, only one thick line is shown in FIG. 8, but this is not intended to represent only one bus or type of bus.
The memory 74 may include a volatile memory (RAM), such as a random-access memory (RAM); the memory may also include a non-volatile memory (english: non-volatile memory), such as a flash memory (english: flash memory), a hard disk (english: hard disk drive, abbreviation: HDD), or a solid-state drive (english: SSD); the memory 74 may also comprise a combination of memories of the kind described above.
The processor 71 may be a Central Processing Unit (CPU), a Network Processor (NP), or a combination of CPU and NP.
The processor 71 may further include a hardware chip, which may be an application-specific integrated circuit (ASIC), a programmable logic device (CP L D), or a combination thereof, and the P L D may be a complex programmable logic device (CP L D), a field-programmable gate array (FPGA), a general-purpose array logic (GA L), or any combination thereof.
Optionally, the memory 74 is also used for storing program instructions. The processor 71 may call program instructions to implement the testing method of the IGBT device as shown in the embodiments of fig. 6 and 7 of the present application.
According to a fourth aspect, embodiments of the present invention further provide a non-transitory computer storage medium, where computer-executable instructions are stored, where the computer-executable instructions may execute the method for testing the IGBT device in any of the above method embodiments. The storage medium may be a magnetic Disk, an optical Disk, a Read-only Memory (ROM), a Random Access Memory (RAM), a flash Memory (FlashMemory), a Hard Disk (Hard Disk Drive, abbreviated as HDD) or a Solid State Drive (SSD), etc.; the storage medium may also comprise a combination of memories of the kind described above.
Although the embodiments of the present invention have been described in conjunction with the accompanying drawings, those skilled in the art may make various modifications and variations without departing from the spirit and scope of the invention, and such modifications and variations fall within the scope defined by the appended claims.

Claims (10)

1. A testing device for IGBT devices is characterized by comprising:
the pressure sensor is used for detecting a plurality of groups of contact pressure values applied to the IGBT device to be detected, and each group of contact pressure values corresponds to the same applied area;
the two ends of the voltmeter are respectively connected with the collector electrode and the emitter electrode of the IGBT device to be detected, and the voltmeter is used for detecting a plurality of groups of on-state voltage drop values between the collector electrode and the emitter electrode of the IGBT device to be detected under the plurality of groups of contact pressure values;
the fixed current source is respectively connected with the collector electrode and the emitter electrode of the IGBT device to be tested and is used for providing fixed current for the IGBT device to be tested;
and the processor is connected with the pressure sensor and the voltmeter and is used for calculating the contact resistance value of the IGBT device to be tested by utilizing the multiple groups of contact pressure values, the multiple groups of on-state voltage drop values, the fixed current and the pressing area.
2. The test device of claim 1, wherein the fixed current source comprises:
one end of the inductor is connected with the collector electrode of the IGBT device to be tested;
and the positive electrode of the voltage source is connected with the other end of the inductor, and the negative electrode of the voltage source is connected with the emitting electrode of the IGBT device and used for providing fixed voltage.
3. The testing device of claim 1, further comprising: and the driving circuit comprises a driving power supply and a resistor, and the anode of the driving power supply is connected with the grid electrode of the IGBT device to be tested through the resistor and is used for providing driving voltage for the IGBT device to be tested.
4. The test apparatus as claimed in claim 1, wherein the pressure sensor is mounted on a test fixture, and the IGBT device under test is also mounted on the test fixture.
5. A method for testing an IGBT device is characterized by comprising the following steps:
acquiring a plurality of groups of contact pressure values applied to the IGBT device to be tested, wherein each group of contact pressure values correspond to the same pressure application area;
acquiring multiple groups of on-state pressure drop values between the collector and the emitter of the IGBT device to be tested under the multiple groups of contact pressure values, wherein the multiple groups of contact pressure values correspond to the multiple groups of on-state pressure drop values one to one;
obtaining a fixed current passing through the IGBT device to be tested;
calculating by using the multiple groups of contact pressure values, the multiple groups of on-state pressure drop values, the pressure application area and the fixed current according to a preset calculation formula to obtain a test parameter; the test parameters are used for representing a calculation coefficient between a contact resistance value, a pressure application area and a contact pressure value of the IGBT device to be tested;
and calculating the contact resistance value of the IGBT device to be tested by utilizing the numerical relation among the test parameters, the pressure application area, the contact pressure value and the contact resistance value.
6. The method according to claim 5, wherein the calculating the test parameters by using the plurality of sets of contact pressure values, the plurality of sets of on-state pressure drop values, the pressing area and the fixed current according to a preset calculation formula comprises:
calculating to obtain a plurality of groups of initial values of test parameters according to a preset calculation formula by using the plurality of groups of contact pressure values, the plurality of groups of on-state pressure drop values, the pressure applying area and the fixed current;
and averaging the plurality of groups of test parameter initial values to obtain the test parameters.
7. The method according to claim 6, wherein the calculating a plurality of sets of initial values of the test parameters according to a preset calculation formula by using the plurality of sets of contact pressure values, the plurality of sets of on-state pressure drop values, the pressing area and the fixed current comprises:
from the plurality of sets of contact pressure values and the plurality of sets of on-state pressure drop valuesDetermining all parameter calculation groups, wherein each parameter calculation group comprises two groups of contact pressure values and corresponding on-state pressure drop values, and calculating by a preset formula
Figure FDA0002461897410000021
Each test parameter initial value:
Figure FDA0002461897410000022
wherein K is the initial value of the test parameter, Vcei、VcejRespectively the ith and jth on-state voltage drop values, I is the fixed current, A is the area to be pressed, Fi、FjRespectively the ith and jth groups of contact pressure values, n represents the number of groups of contact pressure values or passband pressure drop values, i is more than or equal to 1 and less than or equal to n, and j is more than or equal to 1 and less than or equal to n.
8. The test method according to claim 5, wherein the contact resistance value is calculated by the following formula:
Figure FDA0002461897410000023
wherein R isSTo contact resistance value, K1For testing parameters, A is the area of the pressure contact surface of the IGBT device to be tested, and F is the contact pressure value arbitrarily applied to the IGBT device to be tested.
9. An electronic device, comprising:
a memory and a processor, wherein the memory and the processor are communicatively connected with each other, the memory stores computer instructions, and the processor executes the computer instructions to execute the testing method of the IGBT device according to any one of claims 5 to 8.
10. A computer-readable storage medium storing computer instructions for causing a computer to execute the method for testing an IGBT device according to any one of claims 5 to 8.
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