CN111487514B - Method and system for extracting stray capacitance of IGBT dynamic parameter test circuit - Google Patents

Method and system for extracting stray capacitance of IGBT dynamic parameter test circuit Download PDF

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CN111487514B
CN111487514B CN202010312229.4A CN202010312229A CN111487514B CN 111487514 B CN111487514 B CN 111487514B CN 202010312229 A CN202010312229 A CN 202010312229A CN 111487514 B CN111487514 B CN 111487514B
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current
collector
transient
electric quantity
voltage
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CN111487514A (en
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唐新灵
滕乐天
吴军民
韩荣刚
石浩
金锐
张喆
林仲康
王亮
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Global Energy Interconnection Research Institute
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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
    • G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
    • G01R27/26—Measuring inductance or capacitance; Measuring quality factor, e.g. by using the resonance method; Measuring loss factor; Measuring dielectric constants ; Measuring impedance or related variables
    • G01R27/2605—Measuring capacitance
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2607—Circuits therefor
    • G01R31/2608—Circuits therefor for testing bipolar transistors
    • G01R31/2617—Circuits therefor for testing bipolar transistors for measuring switching properties thereof

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Abstract

The invention discloses a method and a system for extracting stray capacitance of an IGBT dynamic parameter test circuit, wherein the method comprises the following steps: measuring the actual measurement voltage and the actual measurement current of the emitter and the collector of the IGBT device in the transient opening process to obtain a voltage change curve of the actual measurement voltage of the emitter in the transient opening process and a current change curve of the actual measurement current of the collector in the transient opening process; calculating the voltage difference between the ending moment and the starting moment of the emitter voltage in the transient switching-on process by using the voltage change curve; calculating the electric quantity difference between the ideal electric quantity and the measured electric quantity of the collector in the transient opening process by using the current change curve; and dividing the voltage difference by the electric quantity difference to obtain the stray capacitance of the IGBT dynamic parameter test circuit. According to the invention, based on the switching-on transient waveform of the IGBT device, the stray capacitance of the dynamic test platform is calculated by an actual measurement method, so that the accuracy of the measurement result of the dynamic test equipment can be effectively evaluated, and a basis is provided for formulating the standard of the stray capacitance of the equipment.

Description

Method and system for extracting stray capacitance of IGBT dynamic parameter test circuit
Technical Field
The invention relates to the technical field of device testing, in particular to a stray capacitance extraction method and system for an IGBT dynamic parameter testing circuit.
Background
The IGBT combines the advantages of MOS devices and bipolar transistor devices, becomes a mainstream device in the field of power electronics, is widely applied to the fields of communication, traffic, industry, power transmission and the like, and develops a corresponding packaging structure to ultra-low parasitic inductance packaging, an intelligent power module and an ultra-high power crimping packaging structure through decades of development and a communicated welding type.
The IGBT dynamic parameters are basic parameters for representing the IGBT switching characteristics, are the basis of device application design, and in order to measure the dynamic parameters of the IGBT device, a corresponding dynamic performance test platform needs to be built. Due to the existence of stray capacitance in a test loop, the inventor finds that the situation of unobvious current distortion caused by rapid voltage rise can occur in the turn-off process of an IGBT device, so that the stray capacitance of an IGBT dynamic parameter test platform is not easy to calculate, but the distortion of current is obvious due to rapid voltage change in the turn-on transient process, and the test result of device parameters is influenced. Therefore, the determination of the value of the stray capacitance has important significance for accurately obtaining the dynamic parameters of the IGBT device.
Disclosure of Invention
In view of this, the embodiment of the invention provides a method and a system for extracting stray capacitance of an IGBT dynamic parameter test circuit, which solve the problem in the prior art that the stray capacitance in a test loop of an IGBT dynamic parameter test platform cannot be obtained, thereby affecting the test result of device parameters, due to the current distortion caused by the rapid change of voltage in the IGBT switching transient process.
In order to achieve the purpose, the invention provides the following technical scheme:
in a first aspect, an embodiment of the present invention provides a method for extracting a stray capacitance of an IGBT dynamic parameter test circuit, where the IGBT dynamic parameter test circuit is used to connect an IGBT device to test the IGBT device, and the method includes: measuring the actually measured emitter voltage and the actually measured collector current of the IGBT device in the transient switching-on process to obtain a voltage change curve of the actually measured emitter voltage in the transient switching-on process and a current change curve of the actually measured collector current in the transient switching-on process; calculating the voltage difference between the ending moment and the starting moment of the emitter voltage in the transient switching-on process by using the voltage change curve; calculating the electric quantity difference between the ideal electric quantity and the actually measured electric quantity of the collector electrode in the transient opening process by using the current change curve; and dividing the voltage difference by the electric quantity difference to obtain the stray capacitance of the IGBT dynamic parameter testing circuit.
In an embodiment, the calculating, by using the current variation curve, a power difference between an ideal power and a measured power of a collector during the transient switching-on process includes: integrating the actually measured collector current in the transient opening process by using a current change curve to obtain the actually measured collector current; calculating to obtain the ideal electric quantity by utilizing the actual measurement current of the collector at the ending moment of the transient opening process and the actual measurement current of the collector at the starting moment as well as the time difference between the ending moment and the starting moment; and subtracting the actually measured electric quantity from the ideal electric quantity to obtain the electric quantity difference.
In one embodiment, the difference in the electrical quantities is calculated by the following formula:
Figure BDA0002458090690000021
wherein Δ Q represents a difference in electric quantity, iloadRepresenting collector ideal current, icRepresenting measured collector current, t1Indicating the start of the transient opening process, t2Indicating the end time of the transient opening process.
In one embodiment, the ideal amount of power is calculated by the following formula:
Figure BDA0002458090690000031
wherein iloadRepresenting collector ideal current, icRepresenting measured collector current, t1Indicating the start of the transient opening process, t2Indicating the end time of the transient opening process.
In one embodiment, the stray capacitance of the IGBT dynamic parameter test circuit is calculated by the following formula:
Figure BDA0002458090690000032
wherein, CσStray capacitance, i, representing an IGBT dynamic parametric test circuitcRepresenting measured collector current, t1Denotes the starting time of the transient opening process, t2Indicating the end of the transient opening process, uceRepresenting the measured emitter voltage.
In one embodiment, the stray capacitance present in the IGBT dynamic parameter test circuit includes: the first parasitic capacitance between the collector electrode and the positive electrode of the power supply, and the second parasitic capacitance between the collector electrode and the negative electrode of the power supply.
In an embodiment, the calculating the ideal electric quantity by using the measured collector current at the end time of the transient turn-on process and the measured collector current at the start time and the time difference between the end time and the start time includes: calculating the ideal current of a collector of the IGBT device according to kirchhoff's theorem;
the collector ideal current is calculated by the following formula:
iload＝ic+ic1+ic2
wherein iloadRepresenting collector ideal current, icRepresenting measured collector current, ic1Representing a first current component, i, generated by a first parasitic capacitancec2A second current component generated by a second parasitic capacitance;
and integrating the ideal current at the starting moment of the transient opening process and the ending moment of the transient opening process by using the current change curve to obtain the ideal electric quantity.
In one embodiment, the current component caused by the stray capacitance of the IGBT dynamic parameter test circuit during transient turn-on is calculated by the following formula:
Figure BDA0002458090690000041
wherein, Cσ1Representing a first parasitic capacitance, i, between the collector and the positive pole of the DC bus capacitorc1Representing a first current component, C, due to a first parasitic capacitanceσ2Representing a second parasitic capacitance, i, between the collector and the negative pole of the DC bus capacitorc2Represents a second current component, u, generated by the second parasitic capacitanceceRepresenting measured emitter voltage, ucRepresenting the dc bus voltage.
In a second aspect, an embodiment of the present invention provides a stray capacitance extraction system for an IGBT dynamic parameter test circuit, including: the acquisition module is used for measuring the actually measured emitter voltage and the actually measured collector current of the IGBT device in the transient switching-on process to obtain a voltage change curve of the actually measured emitter voltage in the transient switching-on process and a current change curve of the actually measured collector current in the transient switching-on process; the first calculation module is used for calculating the voltage difference between the ending moment and the starting moment of the emitter measured voltage in the transient switching-on process by utilizing the voltage change curve; the second calculation module is used for calculating the electric quantity difference between the ideal electric quantity and the actually measured electric quantity of the collector electrode in the transient opening process by using the current change curve; and the third calculation module is used for dividing the electric quantity difference by the voltage difference to obtain the stray capacitance of the IGBT dynamic parameter test circuit.
In a third aspect, an embodiment of the present invention provides an electronic device, including: the IGBT dynamic parameter test circuit comprises at least one processor and a memory communicatively connected with the at least one processor, wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor to cause the at least one processor to execute the IGBT dynamic parameter test circuit stray capacitance extraction method according to the first aspect of the embodiment of the invention.
In a fourth aspect, an embodiment of the present invention provides a computer-readable storage medium, where computer instructions are stored, and the computer instructions are configured to enable a computer to execute the method for extracting stray capacitance of an IGBT dynamic parameter test circuit according to the first aspect of the embodiment of the present invention.
The technical scheme of the invention has the following advantages:
1. according to the method and the system for extracting the stray capacitance of the IGBT dynamic parameter test circuit, the corresponding change curve is obtained through the measured emitter actual measurement voltage and collector actual measurement current in the IGBT transient switching-on process, and the change curve is used for calculating the voltage difference and the electric quantity difference so as to obtain the stray capacitance of the IGBT dynamic parameter test circuit; on the basis of the switching-on transient waveform of the IGBT device, the stray capacitance of the dynamic test platform is calculated through an actual measurement method, the dynamic test performance of the test equipment is evaluated, meanwhile, the method is also an important basis for evaluating the accuracy of the measurement result of the dynamic test equipment, the stray capacitance value of the equipment is obtained through accurate measurement, the accuracy of the measurement result of the dynamic test equipment can be effectively evaluated, and a basis is provided for formulating the standard of the stray capacitance of the equipment.
2. According to the method and the system for extracting the stray capacitance of the IGBT dynamic parameter test circuit, provided by the invention, the stray capacitance contained in the IGBT dynamic parameter test circuit is extracted through analysis, then the current component caused by the stray capacitance in the opening process of the IGBT is calculated, the ideal electric quantity is calculated by using the determined starting time and ending time of the transient opening process, the change curve of the actually measured voltage and the change curve of the measured current, and then the stray capacitance value of the IGBT dynamic parameter test circuit is calculated; and correcting the IGBT dynamic parameter test result through the calculated stray capacitance value in the test circuit, so that the measurement result of the dynamic test equipment is more accurate.
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In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the embodiments or the prior art descriptions will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a flowchart of a specific example of a method for extracting stray capacitance of an IGBT dynamic parameter test circuit according to an embodiment of the present invention;
fig. 2 is a schematic diagram of an IGBT dynamic parameter testing circuit provided in an embodiment of the present invention;
fig. 3 is a schematic diagram of a voltage variation curve and a current variation curve in a transient turn-on process according to an embodiment of the present invention;
fig. 4 is an equivalent circuit diagram of a schematic diagram of an IGBT dynamic parameter test circuit provided by an embodiment of the present invention;
fig. 5 is a schematic diagram of a stray capacitance extraction system of an IGBT dynamic parameter test circuit provided by an embodiment of the present invention;
fig. 6 is a composition diagram of a specific example of an electronic device according to an embodiment of the present invention.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it should be understood that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be connected through the inside of the two elements, or may be connected wirelessly or through a wire. The specific meanings of the above terms in the present invention can be understood in a specific case to those of ordinary skill in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The embodiment of the invention provides a stray capacitance extraction method for an IGBT dynamic parameter test circuit, wherein the IGBT dynamic parameter test circuit is used for connecting an IGBT device to test the IGBT device, as shown in figure 1, the stray capacitance extraction method for the IGBT dynamic parameter test circuit comprises the following steps:
step S1: and measuring the actually measured emitter voltage and the actually measured collector current of the IGBT device in the transient switching-on process to obtain a voltage change curve of the actually measured emitter voltage in the transient switching-on process and a current change curve of the actually measured collector current in the transient switching-on process.
In the embodiment of the invention, an IGBT dynamic parameter test platform is built based on a double-pulse test method, a schematic diagram of a test circuit is shown in FIG. 2, wherein a DUT (device under test), a Diode (free-wheeling Diode), and LloadIs the value of the load inductance, icCollector current for the IGBT device under test, iloadIs the load current udcIs a DC bus voltage ugeIs the voltage between the gate and the emitter of the IGBT. It should be noted that the embodiment of the present invention is merely illustrated by the circuit shown in fig. 2,in practical application, the method provided by the embodiment of the invention can also be applied to other circuits with stray capacitance in a test circuit for measuring the IGBT parameters in the turn-on process, and the invention is not limited to this.
The embodiment of the invention carries out measurement by a measuring tool, for example, an alternating current clamp meter, wherein the clamp meter is selected to be a convenient measuring instrument, the maximum characteristic is that the current value and the voltage value can be measured without cutting wires, when a general ammeter is used for measuring the current, the wires need to be cut off and the ammeter needs to be connected to a measured circuit, but when the clamp meter is used, the current and the voltage can be measured only by clamping the clamp meter on a conducting wire, and the maximum benefit of the measuring mode is that the large current and the voltage can be measured without turning off the measured circuit. Measuring the actually measured emitter voltage and the actually measured collector current of the IGBT device in the transient opening process, obtaining a voltage change curve of the actually measured emitter voltage in the transient opening process and a current change curve of the actually measured collector current in the transient opening process according to the relation of the actually measured voltage and the actually measured current along with the change of time, selecting the time point when the current starts to rise as the starting time of the transient opening process of the subsequent integral calculation, selecting the time point corresponding to the inflection point when the current starts to rise after falling as the ending time of the transient opening process of the integral calculation by utilizing the current change curves as shown in fig. 3, and calculating the capacitance value in the time period by combining the actual switching waveform after determining the starting time and the ending time of the transient opening process.
It should be noted that, in the embodiment of the present invention, the measuring tool for measuring the actual measured voltage of the emitter and the actual measured current of the collector of the device may be an ac clamp, or may be another measuring tool, such as a multimeter, only the measurement voltage needs to be measured without performing a mistake and a dc shift, the measurement current is required to start from a large shift, and since the shift is too small, the meter is easily burned, and therefore, the measuring tool only needs to be selected according to the actual needs of the system, which is not limited by the present invention.
Step S2: and calculating the voltage difference between the ending moment and the starting moment of the emitter voltage in the transient switching-on process by using the voltage change curve.
In the embodiment of the invention, the voltage change curve obtained by using the measurement data is used for subtracting the actually measured voltage value corresponding to the starting moment from the actually measured voltage of the emitter at the ending moment of the transient opening process, and the voltage difference between the ending moment and the starting moment of the transient opening process can be obtained. It should be noted that, in practical applications, according to different requirements of an actual system, in the process of calculating the voltage difference between the ending time and the starting time of the transient activation process, a certain principle is used to perform weighting calculation or add a base number, which is not limited in the present invention.
Step S3: and calculating the electric quantity difference between the ideal electric quantity and the measured electric quantity of the collector in the transient opening process by using the current change curve.
In the embodiment of the invention, the current change curve obtained by using the measurement data subtracts the actual measurement electric quantity from the ideal electric quantity of the collector electrode in the transient opening process to obtain the electric quantity difference, wherein the electric quantity represents the quantity of electric charges carried by an object, and the electric quantity can also refer to the quantity of electric energy required by electric equipment, which is also called electric energy or electric work, and the unit of the electric energy is kilowatt hour (kW.h). The charge is equal to the current times the time. It should be noted that, in practical applications, according to different requirements of an actual system, in the process of calculating the electric quantity difference between the ideal electric quantity and the measured electric quantity of the collector in the transient activation process, a certain principle is used to perform weighting calculation or add a base number, and the present invention is not limited thereto.
Alternatively, the electric quantity difference is calculated by the following formula:
Figure BDA0002458090690000101
wherein Δ Q represents a difference in electric quantity, iloadRepresenting collector ideal current, icRepresenting measured collector current, t1Indicating the start of the transient opening process, t2Indicating the end time of the transient opening process.
Alternatively, the ideal amount of electricity is calculated by the following formula:
Figure BDA0002458090690000102
wherein iloadRepresents the collector ideal current, icRepresenting measured collector current, t1Denotes the starting time of the transient opening process, t2Indicating the end time of the transient opening process.
Step S4: and dividing the voltage difference by the electric quantity difference to obtain the stray capacitance of the IGBT dynamic parameter testing circuit.
In the embodiment of the invention, the stray capacitance of the IGBT dynamic parameter test circuit is obtained by dividing the voltage difference by the electric quantity difference, and due to the existence of the stray capacitance in the test circuit, the actual current actually flowing between the collector and the emitter of the IGBT device to be tested is smaller than the ideal current of the test circuit, so that the actual test of the dynamic parameters of the IGBT is deviated, therefore, the analysis is carried out based on the equivalent circuit diagram of the test circuit schematic diagram shown in fig. 4, and the stray capacitance in the IGBT dynamic parameter test circuit comprises: a first parasitic capacitance between the collector and the positive supply, and a second parasitic capacitance between the collector and the negative supply. After the stray capacitance value existing in the test circuit is calculated, the IGBT dynamic parameter test result can be corrected through the stray capacitance and the current component flowing through the stray capacitance, so that the measurement result of the dynamic test equipment is more accurate.
Alternatively, the stray capacitance of the IGBT dynamic parameter test circuit may be calculated by the following formula:
Figure BDA0002458090690000111
wherein, CσStray capacitance, i, representing an IGBT dynamic parameter test circuitcRepresenting measured collector current, t1Denotes the starting time of the transient opening process, t2Indicating the end of the transient opening process, uceRepresenting the measured emitter voltage.
According to the method for extracting the stray capacitance of the IGBT dynamic parameter test circuit, the corresponding change curve is obtained through the measured actually-measured voltage of the emitter and the actually-measured current of the collector in the transient switching-on process of the IGBT, and the change curve is used for calculating the voltage difference and the electric quantity difference so as to obtain the stray capacitance of the IGBT dynamic parameter test circuit; on the basis of the switching-on transient waveform of the IGBT device, the stray capacitance of the dynamic test platform is calculated through an actual measurement method, the dynamic test performance of the test equipment is evaluated, meanwhile, the method is also an important basis for evaluating the accuracy of the measurement result of the dynamic test equipment, the stray capacitance value of the equipment is obtained through accurate measurement, the accuracy of the measurement result of the dynamic test equipment can be effectively evaluated, and a basis is provided for formulating the standard of the stray capacitance of the equipment.
In a specific embodiment, the method for calculating the electric quantity difference between the ideal electric quantity and the measured electric quantity of the collector in the transient opening process by using the current variation curve comprises the following steps:
step S31: and integrating the actually measured collector current in the transient opening process by using the current change curve to obtain the actually measured collector electric quantity.
In the embodiment of the present invention, the current measured by the collector in the transient switching-on process is integrated by using the current transformation curve to obtain the measured electric quantity of the collector, it should be noted that, in the calculation process, a corresponding weight may be optionally added according to the importance of a certain module or an operation parameter of the system, which is not limited in the present invention.
Alternatively, the measured collector charge may be calculated by the following equation:
Figure BDA0002458090690000121
wherein Q iscRepresents the measured electric quantity i of the collectorcRepresenting measured collector current, t1Denotes the starting time of the transient opening process, t2Indicating the end time of the transient opening process.
Step S32: and calculating to obtain the ideal electric quantity by utilizing the actually measured collector current at the ending moment and the actually measured collector current at the starting moment of the transient opening process and the time difference between the ending moment and the starting moment.
In the embodiment of the present invention, the ideal electric quantity is calculated by using the measured collector current at the end time of the transient turn-on process, the measured collector current at the start time, and the time difference between the end time and the start time.
Step S33: and subtracting the actually measured electric quantity from the ideal electric quantity to obtain an electric quantity difference.
In an embodiment, the ideal electric quantity is calculated by using the measured collector current at the end time of the transient switching-on process, the measured collector current at the start time and the time difference between the end time and the start time, and the method includes the following steps:
step S321: and calculating the ideal collector current of the IGBT device according to kirchhoff's theorem.
In the embodiment of the present invention, the test circuit is analyzed, the ideal collector current of the IGBT device is calculated according to kirchhoff's theorem, and the ideal collector current of the IGBT device is obtained by adding the actually measured collector current of the IGBT device to the first parasitic capacitance between the collector and the positive electrode of the power supply and the second parasitic capacitance between the collector and the negative electrode of the power supply.
In the whole test circuit, taking the test circuit in fig. 2 as an example for explanation, the whole ideal current is divided into three current components, the current actually flows between the collector and the emitter of the device, and the two current components flowing through the first parasitic capacitance between the collector of the device and the positive electrode of the power supply and the second parasitic capacitance between the collector and the negative electrode of the power supply, in practical application, in the process of calculating the current components flowing through the parasitic capacitances existing in the circuit, weighting or base number increasing calculation may be performed according to the sensitivity and importance of a certain branch, and different analyses are performed according to different actual test circuits for the calculation of the ideal current, which is not limited by the present invention.
Alternatively, the collector ideal current is calculated by the following formula:
iload＝ic+ic1+ic2 (5)
wherein iloadRepresents the collector ideal current, icRepresenting measured collector current, ic1Representing a first current component, i, generated by a first parasitic capacitancec2Representing a second current component generated by the second parasitic capacitance.
Optionally, the current component caused by the stray capacitance of the IGBT dynamic parameter test circuit during transient on-process is calculated by the following formula:
Figure BDA0002458090690000141
wherein, Cσ1Representing a first parasitic capacitance, i, between the collector and the positive electrode of the DC bus capacitorc1Representing a first current component, C, due to a first parasitic capacitanceσ2Representing a second parasitic capacitance, i, between the collector and the negative pole of the DC bus capacitorc2Represents a second current component, u, generated by the second parasitic capacitanceceRepresenting measured emitter voltage, ucRepresenting the dc bus voltage.
Step S322: and integrating the ideal current at the starting moment of the transient opening process and the ending moment of the transient opening process by using the current change curve to obtain the ideal electric quantity.
In the embodiment of the invention, after the ideal current of the collector of the IGBT device is calculated according to the kirchhoff theorem, the ideal current is integrated by utilizing the current change curve at the starting time of the transient opening process and the ending time of the transient opening process to obtain the ideal electric quantity.
Alternatively, the ideal amount of electricity may be calculated by the following formula:
Figure BDA0002458090690000142
wherein iloadRepresenting collector ideal current, CσStray capacitance C for representing IGBT dynamic parameter test circuitσ1Representing a first parasitic capacitance, C, between the collector and the positive pole of the DC bus capacitorσ2Representing a second parasitic capacitance, i, between the collector and the negative pole of the DC bus capacitorcRepresenting measured collector current, t1Indicating the start of the transient opening process, t2Indicating the end of the transient opening process, uceRepresenting the measured emitter voltage.
The stray capacitance extracting method of the IGBT dynamic parameter testing circuit comprises the steps of analyzing and extracting stray capacitance contained in the IGBT dynamic parameter testing circuit, then calculating current components caused by the stray capacitance in the opening process of the IGBT, calculating to obtain ideal electric quantity by using the determined starting time and ending time of the transient opening process, the change curve of the actually measured voltage and the change curve of the measured current, and further calculating the stray capacitance value of the IGBT dynamic parameter testing circuit; and correcting the IGBT dynamic parameter test result through the calculated stray capacitance value in the test circuit, so that the measurement result of the dynamic test equipment is more accurate.
Example 2
The embodiment of the invention provides a stray capacitance extraction system of an IGBT dynamic parameter test circuit, as shown in FIG. 5, comprising:
the acquisition module 1 is used for measuring the actually measured emitter voltage and the actually measured collector current of the IGBT device in the transient opening process to obtain a voltage change curve of the actually measured emitter voltage in the transient opening process and a current change curve of the actually measured collector current in the transient opening process; this module executes the method described in step S1 in embodiment 1, and is not described herein again.
The first calculating module 2 is used for calculating the voltage difference between the ending moment and the starting moment of the transient switching-on process of the emitter voltage by using the voltage change curve; this module executes the method described in step S2 in embodiment 1, and is not described herein again.
The second calculating module 3 is used for calculating the electric quantity difference between the ideal electric quantity and the actually measured electric quantity of the collector in the transient opening process by using the current change curve; this module executes the method described in step S3 in embodiment 1, and is not described herein again.
The third calculating module 4 is used for dividing the voltage difference by the electric quantity difference to obtain the stray capacitance of the IGBT dynamic parameter testing circuit; this module executes the method described in step S4 in embodiment 1, and is not described herein again.
According to the stray capacitance extraction system of the IGBT dynamic parameter test circuit, the corresponding change curve is obtained through the measured emitter actual measurement voltage and collector actual measurement current in the IGBT transient switching-on process, and the change curve is used for calculating the voltage difference and the electric quantity difference so as to obtain the stray capacitance of the IGBT dynamic parameter test circuit; on the basis of the turn-on transient waveform of the IGBT device, the stray capacitance of the dynamic test platform is calculated by an actual measurement method, so that the dynamic test performance of the test equipment is evaluated, and meanwhile, the method is also an important basis for evaluating the accuracy of the measurement result of the dynamic test equipment; stray capacitance contained in the IGBT dynamic parameter test circuit is analyzed and extracted, then current components caused by the stray capacitance in the opening process of the IGBT are calculated, the ideal electric quantity is calculated by using the determined starting time and ending time of the transient opening process, the change curve of the actually measured voltage and the change curve of the measured current, and further the stray capacitance value of the IGBT dynamic parameter test circuit is calculated; and correcting the IGBT dynamic parameter test result through the calculated stray capacitance value in the test circuit, so that the measurement result of the dynamic test equipment is more accurate.
Example 3
An embodiment of the present invention provides an electronic device, as shown in fig. 6, including: at least one processor 401, such as a CPU (Central Processing Unit), at least one communication interface 403, memory 404, and at least one communication bus 402. Wherein a communication bus 402 is used to enable connective communication between these components. The communication interface 403 may include a Display (Display) and a Keyboard (Keyboard), and the optional communication interface 403 may also include a standard wired interface and a standard wireless interface. The Memory 404 may be a Ramdom Access Memory (RAM) Memory or a non-volatile Memory (non-volatile Memory), such as at least one disk Memory. The memory 404 may optionally be at least one memory device located remotely from the processor 401. The processor 401 may execute the method for extracting stray capacitance of the IGBT dynamic parameter test circuit according to embodiment 1. A set of program codes is stored in the memory 404, and the processor 401 calls the program codes stored in the memory 404 for executing the IGBT dynamic parameter test circuit stray capacitance extraction method of embodiment 1.
The communication bus 402 may be a Peripheral Component Interconnect (PCI) bus or an Extended Industry Standard Architecture (EISA) bus. The communication bus 402 may be divided into an address bus, a data bus, a control bus, and the like. For ease of illustration, only one line is shown in FIG. 6, but that does not indicate only one bus or type of bus.
The memory 404 may include a volatile memory (RAM), such as a random-access memory (RAM); the memory may also include a non-volatile memory (e.g., flash memory), a hard disk (HDD) or a solid-state drive (SSD); the memory 404 may also comprise a combination of memories of the kind described above.
The processor 401 may be a Central Processing Unit (CPU), a Network Processor (NP), or a combination of a CPU and an NP.
The processor 401 may further include a hardware chip. The hardware chip may be an application-specific integrated circuit (ASIC), a Programmable Logic Device (PLD), or a combination thereof. The PLD may be a Complex Programmable Logic Device (CPLD), a field-programmable gate array (FPGA), General Array Logic (GAL), or any combination thereof.
Optionally, memory 404 is also used to store program instructions. The processor 401 may call a program instruction to implement the method for extracting stray capacitance of the dynamic parameter test circuit of the modular IGBT according to embodiment 1.
The embodiment of the invention also provides a computer-readable storage medium, wherein a computer-executable instruction is stored on the computer-readable storage medium, and the computer-executable instruction can execute the stray capacitance extraction method of the IGBT dynamic parameter test circuit in the embodiment 1. The storage medium may be a magnetic Disk, an optical Disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a Flash Memory (Flash Memory), a Hard Disk (Hard Disk Drive, abbreviated as HDD) or a Solid State Drive (SSD), etc.; the storage medium may also comprise a combination of memories of the kind described above.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.

Claims (10)

1. A stray capacitance extraction method of an IGBT dynamic parameter test circuit is characterized in that the IGBT dynamic parameter test circuit is used for connecting IGBT devices to test the IGBT devices, and the method comprises the following steps:
measuring the actually measured emitter voltage and the actually measured collector current of the IGBT device in the transient switching-on process to obtain a voltage change curve of the actually measured emitter voltage in the transient switching-on process and a current change curve of the actually measured collector current in the transient switching-on process;
calculating the voltage difference between the ending moment and the starting moment of the emitter measured voltage in the transient opening process by using the voltage change curve;
calculating the electric quantity difference between the ideal electric quantity and the measured electric quantity of the collector in the transient opening process by using the current change curve;
and dividing the voltage difference by the electric quantity difference to obtain the stray capacitance of the IGBT dynamic parameter test circuit.
2. The method of claim 1, wherein said calculating a charge difference between an ideal charge and a measured charge of a collector during said transient opening using said current profile comprises:
integrating the actually measured current of the collector electrode in the transient opening process by using a current change curve to obtain the actually measured electric quantity of the collector electrode;
calculating to obtain the ideal electric quantity by utilizing the actual measurement current of the collector at the ending moment of the transient opening process and the actual measurement current of the collector at the starting moment as well as the time difference between the ending moment and the starting moment;
and subtracting the actually measured electric quantity from the ideal electric quantity to obtain the electric quantity difference.
3. The method of claim 2, wherein the difference in electrical quantities is calculated by the formula:
Figure FDA0002458090680000021
wherein Δ Q represents a difference in electric quantity, iloadRepresenting collector ideal current, icRepresenting measured collector current, t1Denotes the starting time of the transient opening process, t2Indicating the end time of the transient opening process.
4. A method according to claim 3, characterized in that the ideal amount of electricity is calculated by the following formula:
Figure FDA0002458090680000022
wherein iloadRepresenting collector ideal current, icRepresenting measured collector current, t1Denotes the starting time of the transient opening process, t2Indicating the end time of the transient opening process.
5. The method of claim 4, wherein the stray capacitance of the IGBT dynamic parametric test circuit is calculated by the following equation:
Figure FDA0002458090680000023
wherein, CσStray capacitance, i, representing an IGBT dynamic parameter test circuitcRepresenting measured collector current, t1Denotes the starting time of the transient opening process, t2Indicating the end of the transient opening process, uceRepresenting the measured emitter voltage.
6. The method of claim 1, wherein stray capacitances present in the IGBT dynamic parameter test circuit comprise: a first parasitic capacitance between the collector and a positive power supply, and a second parasitic capacitance between the collector and a negative power supply.
7. The method of claim 2, wherein calculating the ideal amount of power using a measured collector current at an end time of the transient turn-on process and a measured collector current at a start time and a time difference between the end time and the start time comprises:
calculating the ideal current of a collector of the IGBT device according to kirchhoff's theorem;
the collector ideal current is calculated by the following equation:
iload＝ic+ic1+ic2
wherein iloadRepresents the collector ideal current, icRepresenting measured collector current, ic1Representing a first current component, i, generated by a first parasitic capacitancec2A second current component representing a second parasitic capacitance;
and integrating the ideal current at the starting moment of the transient opening process and the ending moment of the transient opening process by using the current change curve to obtain the ideal electric quantity.
8. The method of claim 1, wherein the current component caused by the stray capacitance of the transient on-process IGBT dynamic parameter test circuit is calculated by the following formula:
Figure FDA0002458090680000041
wherein, Cσ1Representing a first parasitic capacitance, i, between the collector and the positive electrode of the DC bus capacitorc1Representing a first current component, C, due to a first parasitic capacitanceσ2Representing a second parasitic capacitance, i, between the collector and the negative pole of the DC bus capacitorc2Representing a second current component, u, generated by a second parasitic capacitanceceRepresenting measured emitter voltage, ucRepresenting the dc bus voltage.
9. The utility model provides a IGBT dynamic parameter test circuit stray capacitance extraction system which characterized in that includes:
the acquisition module is used for measuring the actually measured emitter voltage and the actually measured collector current of the IGBT device in the transient switching-on process to obtain a voltage change curve of the actually measured emitter voltage in the transient switching-on process and a current change curve of the actually measured collector current in the transient switching-on process;
the first calculation module is used for calculating the voltage difference between the ending moment and the starting moment of the emitter measured voltage in the transient switching-on process by utilizing the voltage change curve;
the second calculation module is used for calculating the electric quantity difference between the ideal electric quantity and the measured electric quantity of the collector electrode in the transient opening process by utilizing the current change curve;
and the third calculation module is used for dividing the electric quantity difference by the voltage difference to obtain the stray capacitance of the IGBT dynamic parameter test circuit.
10. A computer readable storage medium storing computer instructions which, when executed by a processor, implement the IGBT dynamic parameter test circuit stray capacitance extraction method of any one of claims 1-8.
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