CN115881574B - Method, system, equipment and medium for improving silicon carbide MOS tube preparation effect - Google Patents
Method, system, equipment and medium for improving silicon carbide MOS tube preparation effect Download PDFInfo
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- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 142
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- 230000000694 effects Effects 0.000 title claims abstract description 51
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Abstract
The invention relates to a MOS tube preparation technology, and discloses a method, a system, equipment and a medium for improving the preparation effect of a silicon carbide MOS tube, wherein the method comprises the following steps: acquiring historical preparation data, and performing standardized processing on the historical preparation data to obtain standard data; calculating parasitic parameters according to the standard data, and correcting the parasitic parameters by using correction parameters to obtain standard parasitic parameters; acquiring spurious parameters, and monitoring standard spurious parameters and numerical transformation of the spurious parameters to obtain monitoring data; when the monitoring data is abnormal, extracting the stray parameters in the preparation process from the monitoring data, and correcting the stray parameters in the preparation process to obtain updated stray parameters; and (3) monitoring numerical transformation of the standard parasitic parameters and the updated parasitic parameters to obtain updated monitoring data until the updated monitoring data reach the index parameter standard, and completing preparation of the silicon carbide MOS tube. The preparation method can improve the preparation effect of the silicon carbide MOS tube.
Description
Technical Field
The invention relates to the technical field of MOS (metal oxide semiconductor) preparation, in particular to a method, a system, equipment and a medium for improving the preparation effect of a silicon carbide MOS (metal oxide semiconductor) preparation.
Background
With the progress of material science in recent years, wide bandgap devices represented by SiC have been gradually brought into the market, and have advantages of wide bandgap, high breakdown electric field, low loss, large thermal conductivity, small dielectric constant, and the like, as compared with Si-based third-generation semiconductor devices. The silicon carbide MOS tube (SiC-MOSFET) has the characteristics of high temperature resistance, high voltage resistance, high working frequency and low on-state resistance, and the use loss is only 30% of the Si-IGBT loss, so that the use of the SiC-MOSFET can improve the INV-BOX efficiency, reduce the working noise and achieve the aims of reducing the volume and the weight by improving the power density of the whole machine. The high voltage and current change rate existing in the use process of the SiC-MOSFET can generate larger electromagnetic interference in the system under the action of stray parameters, and the normal operation of the whole connecting equipment can be influenced in severe cases. In summary, the existing technology has the problem that the preparation effect of the silicon carbide MOS tube is poor due to the effect of the stray parameter in the preparation process of the silicon carbide MOS tube.
Disclosure of Invention
The invention provides a method, a system, equipment and a medium for improving the preparation effect of a silicon carbide MOS tube, which mainly aim to solve the problem that the preparation effect of the silicon carbide MOS tube is poor due to the action of stray parameters in the preparation process of the silicon carbide MOS tube.
In order to achieve the above object, the present invention provides a method for improving the preparation effect of silicon carbide MOS transistors, comprising:
acquiring historical preparation data of a silicon carbide MOS tube, and carrying out standardized processing on the historical preparation data to obtain standard data of the historical preparation data;
calculating parasitic parameters of the silicon carbide MOS tube according to the standard data, and correcting the parasitic parameters by using preset correction parameters to obtain standard parasitic parameters;
acquiring a spurious parameter, and monitoring the standard spurious parameter and the numerical transformation of the spurious parameter in the preparation process of the silicon carbide MOS tube to obtain monitoring data;
when the monitoring data is abnormal, extracting stray parameters in the preparation process from the monitoring data, and correcting the stray parameters in the preparation process to obtain updated stray parameters;
and monitoring numerical value transformation of the standard parasitic parameters and the updated parasitic parameters in the preparation process of the silicon carbide MOS tube to obtain updated monitoring data until the updated monitoring data reach the preset index parameter standard, and completing the preparation of the silicon carbide MOS tube.
Optionally, the normalizing the historical preparation data to obtain standard data of the historical preparation data includes:
Performing missing value processing on the historical preparation data to obtain initial preparation data;
performing attribute coding on the initial preparation data to obtain coded data;
and unifying the formats of the coded data to obtain standard data.
Optionally, the calculating the parasitic parameter of the silicon carbide MOS transistor according to the standard data includes:
the parasitic parameters were calculated using the following formula:
wherein ,
representing the parasitic parameter,/->
Represents the width of the drain-body junction in the standard data,/->
Represents the area of the drain-body junction in the standard data,/->
Representing the voltage change rate of the drain and the source in the standard data; />
Representing the standard voltage in said standard data, < >>
Respectively representing preset constants.
Optionally, the correcting the parasitic parameter by using a preset correction parameter to obtain a standard parasitic parameter includes:
calculating according to the standard data and the correction parameters to obtain target correction parameters;
the target correction parameter is expressed as:
wherein ,
representing the target correction parameter,/->
Representing an initial correction parameter of said correction parameters, a +.>
Representing standard coefficients in said correction parameters, < > >
Represents the threshold voltage in the correction parameter, < >>
Representing the voltage change rate of the gate source in the standard data;
and updating the parasitic parameters by using the target correction parameters and preset fixed parasitic parameters to obtain standard parasitic parameters.
Optionally, updating the parasitic parameter by using the target correction parameter and a preset fixed parasitic parameter to obtain a standard parasitic parameter, including:
updating the parasitic parameters by using the following formula to obtain the standard parasitic parameters:
wherein ,
representation ofSaid standard parasitic parameter->
Representing the target correction parameter,/->
Representing said fixed parasitic parameter,/->
Representing the voltage change rate of the drain and source in the standard data,/->
Representing preset calculation parameters.
Optionally, the monitoring the standard parasitic parameter and the numerical conversion of the parasitic parameter in the process of preparing the silicon carbide MOS tube to obtain monitoring data includes:
acquiring historical monitoring time length of the preparation of the silicon carbide MOS tube, and carrying out average division on the historical monitoring time length to obtain a monitoring time point;
recording the standard parasitic parameters and the parameter values of the parasitic parameters according to the monitoring time points to obtain target parameter values;
And performing function fitting according to the target parameter value and the monitoring time point to obtain a parameter curve, and taking data in the parameter curve as monitoring data.
Optionally, the correcting the spurious parameters in the preparation process to obtain updated spurious parameters includes:
carrying out numerical analysis on the stray parameters in the preparation process to obtain parameter proportions, and judging whether the parameter proportions are reasonable or not;
and when the parameter proportion is unreasonable, updating the spurious parameters according to a preset standard proportion to obtain updated spurious parameters.
In order to solve the above problems, the present invention further provides a system for improving the manufacturing effect of a silicon carbide MOS transistor, the system comprising:
the data processing module is used for acquiring historical preparation data of the silicon carbide MOS tube, and carrying out standardized processing on the historical preparation data to obtain standard data of the historical preparation data;
the parameter correction module is used for calculating parasitic parameters of the silicon carbide MOS tube according to the standard data, and correcting the parasitic parameters by utilizing preset correction parameters to obtain standard parasitic parameters;
the parameter conversion module is used for acquiring spurious parameters, monitoring the standard spurious parameters and the numerical conversion of the spurious parameters in the preparation process of the silicon carbide MOS tube, and obtaining monitoring data;
The parameter correction module is used for extracting the stray parameters in the preparation process from the monitoring data when the monitoring data are abnormal, and correcting the stray parameters in the preparation process to obtain updated stray parameters;
the silicon carbide MOS tube preparation module is used for monitoring the standard parasitic parameters and numerical conversion of the updated parasitic parameters in the preparation process of the silicon carbide MOS tube, obtaining updated monitoring data until the updated monitoring data reach the preset index parameter standard, and completing the preparation of the silicon carbide MOS tube.
In order to solve the above-mentioned problems, the present invention also provides an electronic apparatus including:
at least one processor; the method comprises the steps of,
a memory communicatively coupled to the at least one processor; wherein,
the memory stores a computer program executable by the at least one processor to enable the at least one processor to perform the method of enhancing the silicon carbide MOS tube manufacturing effect described above.
In order to solve the above-mentioned problems, the present invention further provides a computer readable storage medium having stored therein at least one computer program that is executed by a processor in an electronic device to implement the above-mentioned method for improving the silicon carbide MOS tube manufacturing effect.
According to the embodiment of the invention, the standard data is more accurate by carrying out standardized processing on the historical preparation data; the parasitic parameters of the silicon carbide MOS tube are calculated through standard data, so that the calculation efficiency can be accelerated, and the accuracy of the parasitic parameters is ensured; correcting the parasitic parameters through the correction parameters, so that the obtained standard parasitic parameters are more accurate; the parameter transformation can be monitored in time by monitoring the standard parasitic parameters and the numerical transformation of the parasitic parameters in the preparation process of the silicon carbide MOS tube, so that the stability of the preparation process is ensured; when the monitoring data is abnormal, the stray parameters can be ensured to be updated in time by correcting the stray parameters, so that the accuracy of the stray parameters is ensured; the updated monitoring data are obtained by monitoring the standard parasitic parameters and the numerical value transformation of the parasitic parameters in the preparation process of the silicon carbide MOS tube until the updated monitoring data reach the index parameter standard, so that the preparation of the silicon carbide MOS tube is completed, the effect of the parasitic parameters can be reduced, and the preparation effect of the silicon carbide MOS tube is improved. Therefore, the method, the system, the equipment and the medium for improving the preparation effect of the silicon carbide MOS tube can solve the problem of poor preparation effect of the silicon carbide MOS tube due to the action of stray parameters in the preparation process of the silicon carbide MOS tube.
Drawings
FIG. 1 is a flow chart of a method for improving the manufacturing effect of a silicon carbide MOS tube according to an embodiment of the present invention;
FIG. 2 is a flow chart of a standardized process for obtaining historical preparation data according to an embodiment of the present invention;
FIG. 3 is a flow chart of a method for obtaining monitoring data by monitoring the numerical conversion of the parasitic parameters and the spurious parameters in the process of preparing the silicon carbide MOS tube according to an embodiment of the present invention;
FIG. 4 is a functional block diagram of a system for improving the manufacturing effect of a silicon carbide MOS tube according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of an electronic device for implementing the method for improving the manufacturing effect of a silicon carbide MOS transistor according to an embodiment of the present invention.
The achievement of the objects, functional features and advantages of the present invention will be further described with reference to the accompanying drawings, in conjunction with the embodiments.
Detailed Description
It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
The embodiment of the application provides a method for improving the preparation effect of a silicon carbide MOS tube. The execution subject of the method for improving the silicon carbide MOS tube preparation effect includes, but is not limited to, at least one of a server, a terminal, and the like, which can be configured to execute the method provided by the embodiment of the application. In other words, the method for improving the silicon carbide MOS tube preparation effect may be performed by software or hardware installed in a terminal device or a server device, where the software may be a blockchain platform. The service end includes but is not limited to: a single server, a server cluster, a cloud server or a cloud server cluster, and the like. The server may be an independent server, or may be a cloud server that provides cloud services, cloud databases, cloud computing, cloud functions, cloud storage, network services, cloud communications, middleware services, domain name services, security services, content delivery networks (Content Delivery Network, CDN), and basic cloud computing services such as big data and artificial intelligence platforms.
Referring to fig. 1, a flow chart of a method for improving the manufacturing effect of a silicon carbide MOS transistor according to an embodiment of the invention is shown. In this embodiment, the method for improving the preparation effect of the silicon carbide MOS transistor includes:
s1, acquiring historical preparation data of a silicon carbide MOS tube, and performing standardized processing on the historical preparation data to obtain standard data of the historical preparation data.
In the embodiment of the invention, the silicon carbide MOS tube refers to a power device which is manufactured by adopting a silicon carbide material as a matrix and through epitaxial growth; the historical preparation data refers to preparation data in the preparation process of the silicon carbide MOS tube, wherein the preparation data comprises, but is not limited to, silicon carbide materials, the width and the area of a depletion layer of a drain-body junction of the MOS tube, voltage, instrument parameters of an instrument, and the voltage change rate of a gate source and a drain source.
Referring to fig. 2, in the embodiment of the present invention, the normalizing the historical preparation data to obtain standard data of the historical preparation data includes:
s21, performing missing value processing on the historical preparation data to obtain initial preparation data;
s22, performing attribute coding on the initial preparation data to obtain coded data;
S23, unifying formats of the coded data to obtain standard data.
In the embodiment of the invention, because data may be lost in the historical preparation data due to the fact that human factors are not recorded, missed or lost or the failure of data acquisition equipment and storage medium failure, the historical preparation data needs to be subjected to missing value processing, and the missing value processing generally comprises two methods, namely, directly discarding samples containing missing values, and filling the samples with data (such as filling with a mean value, a median value, a mode value and the like, and filling with a specified value), and selecting the two methods according to actual conditions to process the historical preparation data so as to obtain initial preparation data.
In the embodiment of the present invention, the attribute encoding of the initial preparation data may be performed by using a preset bag-of-word model, for example, the initial preparation data includes three letters of "a", "B" and "C", where "a" is encoded as "01", "B" is encoded as "02", and "C" is encoded as "03", i.e. "a-01", "B-02" and "C-03" are regarded as the encoded data.
In the embodiment of the invention, the format of the coded data is unified, for example: the partial code data is 1 bit, the partial code data is 10 bits, the maximum code data of the bit number is assumed to be selected as the standard bit number, other data which does not reach the standard bit number can be filled with default data, and the default data is self-set and can be set as 0, so that the standard data is obtained.
S2, calculating parasitic parameters of the silicon carbide MOS tube according to the standard data, and correcting the parasitic parameters by using preset correction parameters to obtain standard parasitic parameters.
In the embodiment of the invention, the correction parameter refers to a preset correction coefficient, and is used for correcting the parasitic parameter, so that the parasitic parameter is ensured to be more accurate; the correction parameters include, but are not limited to, an initial correction parameter, a standard coefficient and a threshold voltage, wherein the initial correction parameter, the standard coefficient and the threshold voltage are used for updating the correction parameters, so that the correction parameters are ensured to be more accurate, and the preparation efficiency of the silicon carbide MOS can be improved.
In the embodiment of the present invention, the calculating the parasitic parameter of the silicon carbide MOS transistor according to the standard data includes:
the parasitic parameters were calculated using the following formula:
wherein ,
representing the parasitic parameter,/->
Represents the width of the drain-body junction in the standard data,/->
Represents the area of the drain-body junction in the standard data,/->
Representing the voltage change rate of the drain and the source in the standard data; />
Representing the standard voltage in said standard data, < > >
Respectively representing preset constants.
In the embodiment of the present invention, the correcting the parasitic parameter by using a preset correction parameter to obtain a standard parasitic parameter includes:
calculating according to the standard data and the correction parameters to obtain target correction parameters;
the target correction parameter is expressed as:
wherein ,
representing the target correction parameter,/->
Representing an initial correction parameter of said correction parameters, a +.>
Representing standard coefficients in said correction parameters, < >>
Represents the threshold voltage in the correction parameter, < >>
Representing the voltage change rate of the gate source in the standard data;
and updating the parasitic parameters by using the target correction parameters and preset fixed parasitic parameters to obtain standard parasitic parameters.
In the embodiment of the invention, the correction parameters can be obtained according to the preparation test of the silicon carbide MOS tube for a plurality of times; the fixed parasitic parameter refers to an initial parasitic parameter obtained by measurement calculation in advance.
In the embodiment of the present invention, updating the parasitic parameter by using the target correction parameter and a preset fixed parasitic parameter to obtain a standard parasitic parameter includes:
updating the parasitic parameters by using the following formula to obtain the standard parasitic parameters:
wherein ,
representing said standard parasitic parameters->
Representing the target correction parameter,/->
Representing said fixed parasitic parameter,/->
Representing the voltage change rate of the drain and source in the standard data,/->
Representing preset calculation parameters.
S3, acquiring spurious parameters, monitoring the standard spurious parameters and numerical conversion of the spurious parameters in the preparation process of the silicon carbide MOS tube, obtaining monitoring data, and judging whether the monitoring data are abnormal or not.
In an embodiment of the present invention, the stray parameters include, but are not limited to, drain stray inductance, internal gate resistance, and source parasitic inductance.
Referring to fig. 3, in the embodiment of the present invention, the monitoring the standard parasitic parameter and the numerical transformation of the parasitic parameter in the process of preparing the silicon carbide MOS tube to obtain the monitored data includes:
s31, acquiring historical monitoring time length of the silicon carbide MOS tube, and carrying out average division on the historical monitoring time length to obtain a monitoring time point;
s32, recording the standard parasitic parameters and the parameter values of the parasitic parameters according to the monitoring time points to obtain target parameter values;
and S33, performing function fitting according to the target parameter value and the monitoring time point to obtain a parameter curve, and taking data in the parameter curve as monitoring data.
In the embodiment of the invention, the equal time length division is performed according to the time length of the silicon carbide MOS tube in the past, the end time point is estimated according to the starting time point of the preparation, the monitoring time points of all the equal parts are obtained when the middle time length is divided into equal parts, for example, the starting time point is 8 points, the point between the ends is 9 points, the middle time length is 1 hour, the middle time length is divided into 6 equal parts, namely, the values of the standard parasitic parameters and the spurious parameters are recorded for 10 minutes, and the target parameter value is obtained; drawing a parameter curve by taking the monitoring time point as an abscissa and the target parameter value as an ordinate, taking all data in the parameter curve as monitoring data, and finishing preparation when the target parameter value reaches a preset standard parameter value when the parameter curve tends to be stable, otherwise, generating abnormal phenomena in the monitoring data; by drawing the parameter curve, whether the monitored data is abnormal or not can be accurately judged.
In the embodiment of the invention, judging whether the monitoring data is abnormal refers to whether the monitoring data floats up and down within the normal range of the preset standard monitoring data; the standard monitoring data are data which ensure that the preparation of the silicon carbide MOS tube is completely carried out through multiple tests, and a range which enables the preparation of the silicon carbide MOS tube to be successfully carried out is divided according to the standard monitoring data; when the monitoring data exceeds the range of the standard monitoring data, indicating that the monitoring data is abnormal; and when the monitoring data are within the standard monitoring data range, indicating that the monitoring data are normal.
And when the monitoring data are normal, S4 is executed, and the preparation of the silicon carbide MOS tube is completed according to the standard parasitic parameters and the parasitic parameters.
In the embodiment of the present invention, the preparation of the silicon carbide MOS transistor is completed according to the standard parasitic parameter and the spurious parameter, including:
obtaining silicon carbide materials in the standard data, and carrying out oxidation treatment on the silicon carbide materials based on the standard parasitic parameters to obtain an oxide layer;
covering a preset dielectric layer above the oxide layer to form a laminated structure, and implanting ions into the laminated structure based on the stray parameters to generate an initial silicon carbide MOS tube;
and annealing the initial silicon carbide MOS tube to obtain the silicon carbide MOS tube.
In the embodiment of the invention, the silicon carbide MOS tube is formed after oxidation, ion implantation and annealing treatment are carried out according to the silicon carbide material, wherein the annealing treatment of the initial silicon carbide MOS tube is required to be activated at 1700 ℃; and the preparation of the silicon carbide MOS tube is completed according to the standard parasitic parameters and the parasitic parameters, so that the accuracy of preparation data in the preparation process can be ensured, and the preparation efficiency and effect of the silicon carbide MOS tube are improved.
And when the monitoring data is abnormal, executing S5, extracting the stray parameters in the preparation process from the monitoring data, and correcting the stray parameters in the preparation process to obtain updated stray parameters.
In the embodiment of the invention, the spurious parameters dynamically change in the preparation process of the silicon carbide MOS tube, and when the monitoring data are abnormal, the numerical value of the spurious parameters deviates from the normal numerical value, so that the spurious parameters in the preparation process need to be extracted, and the spurious parameters in the preparation process are corrected, so that the spurious parameters and the monitoring data tend to be normal, and the preparation of the silicon carbide MOS tube can be continuously and stably carried out.
In the embodiment of the present invention, the correcting the spurious parameters in the preparation process to obtain updated spurious parameters includes:
carrying out numerical analysis on the stray parameters in the preparation process to obtain parameter proportions, and judging whether the parameter proportions are reasonable or not;
and when the parameter proportion is unreasonable, updating the spurious parameters according to a preset standard proportion to obtain updated spurious parameters.
In the embodiment of the invention, abnormal monitoring data are extracted according to a monitoring time point, stray parameters in the abnormal monitoring data are calculated to obtain the parameter proportion of the stray parameters in the monitoring data, whether the parameter proportion is too large or too small is judged, and when the parameter proportion is too large, the stray parameters are reduced; and when the parameter proportion is too small, expanding the spurious parameters until the monitoring data are normal, and obtaining updated spurious parameters.
And S6, monitoring the standard parasitic parameters and numerical conversion of the updated parasitic parameters in the preparation process of the silicon carbide MOS tube to obtain updated monitoring data, and judging whether the updated monitoring data reach a preset index parameter standard or not.
In the embodiment of the present invention, the step of monitoring the standard parasitic parameter and the numerical conversion of the updated spurious parameter in the process of preparing the silicon carbide MOS tube to obtain updated monitoring data is similar to the step of monitoring the standard parasitic parameter and the numerical conversion of the spurious parameter in the process of preparing the silicon carbide MOS tube in the above step S3 to obtain monitoring data, and redundant description is omitted here.
In the embodiment of the invention, the index parameter standard refers to standard index parameters obtained according to multiple tests and experiments, for example, the dosage, the required time, the temperature, the voltage and the like of the index parameters, and a standard range is divided according to the index parameter standard; judging whether the updated monitoring data is in the standard range of the index parameter standard, and when the updated monitoring data is in the standard range of the index parameter standard, enabling the updated monitoring data to reach the standard parameter standard; and when the updated monitoring data is not in the standard range of the index parameter standard, the updated monitoring data does not reach the standard parameter standard.
And returning to S5 when the updated monitoring data does not reach the index parameter standard.
In the embodiment of the invention, when the updated monitoring data does not reach the index parameter standard, returning to S5, namely correcting the spurious parameters to obtain updated spurious parameters, and then monitoring the standard spurious parameters and numerical value transformation of the spurious parameters in the process of preparing the silicon carbide MOS tube until the standard parameter standard is reached, and completing the preparation of the silicon carbide MOS tube according to the standard spurious parameters and the spurious parameters.
And when the updated monitoring data reaches the index parameter standard, returning to S4.
In the embodiment of the invention, when the updated monitoring data reaches the index parameter standard, returning to S4, namely finishing the preparation of the silicon carbide MOS tube according to the standard parasitic parameter and the parasitic parameter.
According to the embodiment of the invention, the standard data is more accurate by carrying out standardized processing on the historical preparation data; the parasitic parameters of the silicon carbide MOS tube are calculated through standard data, so that the calculation efficiency can be accelerated, and the accuracy of the parasitic parameters is ensured; correcting the parasitic parameters through the correction parameters, so that the obtained standard parasitic parameters are more accurate; the parameter transformation can be monitored in time by monitoring the standard parasitic parameters and the numerical transformation of the parasitic parameters in the preparation process of the silicon carbide MOS tube, so that the stability of the preparation process is ensured; when the monitoring data is abnormal, the stray parameters can be ensured to be updated in time by correcting the stray parameters, so that the accuracy of the stray parameters is ensured; the updated monitoring data are obtained by monitoring the standard parasitic parameters and the numerical value transformation of the parasitic parameters in the preparation process of the silicon carbide MOS tube until the updated monitoring data reach the index parameter standard, so that the preparation of the silicon carbide MOS tube is completed, the effect of the parasitic parameters can be reduced, and the preparation effect of the silicon carbide MOS tube is improved. Therefore, the method for improving the preparation effect of the silicon carbide MOS tube can solve the problem that the preparation effect of the silicon carbide MOS tube is poor due to the effect of the stray parameters in the preparation process of the silicon carbide MOS tube.
Fig. 4 is a functional block diagram of a system for improving the manufacturing effect of a silicon carbide MOS transistor according to an embodiment of the present invention.
The system 400 for improving the preparation effect of the silicon carbide MOS tube can be installed in electronic equipment. Depending on the implementation, the system 400 for improving the preparation effect of the silicon carbide MOS transistor may include a data processing module 401, a parameter correction module 402, a parameter conversion module 403, a parameter correction module 404, and a silicon carbide MOS transistor preparation module 405. The module of the invention, which may also be referred to as a unit, refers to a series of computer program segments, which are stored in the memory of the electronic device, capable of being executed by the processor of the electronic device and of performing a fixed function.
In the present embodiment, the functions concerning the respective modules/units are as follows:
the data processing module 401 is configured to obtain historical preparation data of a silicon carbide MOS transistor, and perform standardization processing on the historical preparation data to obtain standard data of the historical preparation data;
the parameter correction module 402 is configured to calculate a parasitic parameter of the silicon carbide MOS transistor according to the standard data, and correct the parasitic parameter by using a preset correction parameter to obtain a standard parasitic parameter;
The parameter conversion module 403 is configured to obtain a spurious parameter, monitor the standard spurious parameter and a numerical conversion of the spurious parameter in the process of preparing the silicon carbide MOS tube, and obtain monitoring data;
the parameter correction module 404 is configured to extract a spurious parameter in a preparation process from the monitoring data when the monitoring data is abnormal, and correct the spurious parameter in the preparation process to obtain an updated spurious parameter;
the silicon carbide MOS tube preparation module 405 is configured to monitor the standard parasitic parameter and numerical transformation of the updated parasitic parameter in the preparation process of the silicon carbide MOS tube, and obtain updated monitoring data until the updated monitoring data reaches a preset index parameter standard, thereby completing the preparation of the silicon carbide MOS tube.
In detail, each module in the system 400 for improving the preparation effect of the silicon carbide MOS tube in the embodiment of the present invention adopts the same technical means as the method for improving the preparation effect of the silicon carbide MOS tube in the drawings, and can produce the same technical effects, which are not described herein.
Fig. 5 is a schematic structural diagram of an electronic device for implementing a method for improving the manufacturing effect of a silicon carbide MOS transistor according to an embodiment of the present invention.
The electronic device 500 may include a processor 501, a memory 502, a communication bus 503, and a communication interface 504, and may further include a computer program stored in the memory 502 and executable on the processor 501, such as a program for enhancing the control effect of a silicon carbide MOS transistor.
The processor 501 may be formed by an integrated circuit in some embodiments, for example, a single packaged integrated circuit, or may be formed by a plurality of integrated circuits packaged with the same function or different functions, including one or more central processing units (Central Processing Unit, CPU), a microprocessor, a digital processing chip, a graphics processor, a combination of various control chips, and so on. The processor 501 is a Control Unit (Control Unit) of the electronic device, connects various components of the entire electronic device using various interfaces and lines, executes or executes programs or modules stored in the memory 502 (for example, executes programs for improving the Control effect of a silicon carbide MOS transistor, etc.), and invokes data stored in the memory 502 to perform various functions of the electronic device and process data.
The memory 502 includes at least one type of readable storage medium including flash memory, a removable hard disk, a multimedia card, a card memory (e.g., SD or DX memory, etc.), magnetic memory, magnetic disk, optical disk, etc. The memory 502 may in some embodiments be an internal storage unit of the electronic device, such as a mobile hard disk of the electronic device. The memory 502 may also be an external storage device of the electronic device in other embodiments, for example, a plug-in mobile hard disk, a Smart Media Card (SMC), a Secure Digital (SD) Card, a Flash memory Card (Flash Card) or the like. Further, the memory 502 may also include both internal storage units and external storage devices of the electronic device. The memory 502 may be used to store not only application software installed in an electronic device and various data, such as codes of a program for improving the preparation effect of a silicon carbide MOS tube, but also temporarily store data that has been output or is to be output.
The communication bus 503 may be a peripheral component interconnect standard (Peripheral Component Interconnect, PCI) bus or an extended industry standard architecture (Extended Industry Standard Architecture, EISA) bus, among others. The bus may be classified as an address bus, a data bus, a control bus, etc. The bus is arranged to enable connected communication between the memory 502 and the at least one processor 501 etc.
The communication interface 504 is used for communication between the electronic device and other devices, including network interfaces and user interfaces. Optionally, the network interface may include a wired interface and/or a wireless interface (e.g., WI-FI interface, bluetooth interface, etc.), typically used to establish a communication connection between the electronic device and other electronic devices. The user interface may be a Display (Display), an input unit such as a Keyboard (Keyboard), or alternatively a standard wired interface, a wireless interface. Alternatively, in some embodiments, the display may be an LED display, a liquid crystal display, a touch-sensitive liquid crystal display, an OLED (Organic Light-Emitting Diode) touch, or the like. The display may also be referred to as a display screen or display unit, as appropriate, for displaying information processed in the electronic device and for displaying a visual user interface.
Fig. 5 illustrates only an electronic device having components, and it will be appreciated by those skilled in the art that the configuration illustrated in fig. 5 is not limiting of the electronic device 500 and may include fewer or more components than illustrated, or may combine certain components, or a different arrangement of components.
For example, although not shown, the electronic device may further include a power source (such as a battery) for powering the respective components, and the power source may be logically connected to the at least one processor 501 through a power management system, so as to perform functions of charge management, discharge management, and power consumption management through the power management system. The power supply may also include one or more of any of a direct current or alternating current power supply, a recharging system, a power failure detection circuit, a power converter or inverter, a power status indicator, and the like. The electronic device may further include various sensors, bluetooth modules, wi-Fi modules, etc., which are not described herein.
It should be understood that the embodiments described are for illustrative purposes only and are not limited to this configuration in the scope of the patent application.
The program stored in the memory 502 of the electronic device 500 for improving the preparation effect of the silicon carbide MOS tube is a combination of a plurality of instructions, and when running in the processor 501, it can be implemented:
Acquiring historical preparation data of a silicon carbide MOS tube, and carrying out standardized processing on the historical preparation data to obtain standard data of the historical preparation data;
calculating parasitic parameters of the silicon carbide MOS tube according to the standard data, and correcting the parasitic parameters by using preset correction parameters to obtain standard parasitic parameters;
acquiring a spurious parameter, and monitoring the standard spurious parameter and the numerical transformation of the spurious parameter in the preparation process of the silicon carbide MOS tube to obtain monitoring data;
when the monitoring data is abnormal, extracting stray parameters in the preparation process from the monitoring data, and correcting the stray parameters in the preparation process to obtain updated stray parameters;
and monitoring numerical value transformation of the standard parasitic parameters and the updated parasitic parameters in the preparation process of the silicon carbide MOS tube to obtain updated monitoring data until the updated monitoring data reach the preset index parameter standard, and completing the preparation of the silicon carbide MOS tube.
In particular, the specific implementation method of the above instruction by the processor 501 may refer to the description of the relevant steps in the corresponding embodiment of the drawings, which is not repeated herein.
Further, the modules/units integrated with the electronic device 500 may be stored in a computer readable storage medium if implemented in the form of software functional units and sold or used as a stand alone product. The computer readable storage medium may be volatile or nonvolatile. For example, the computer readable medium may include: any entity or system capable of carrying the computer program code, a recording medium, a U disk, a removable hard disk, a magnetic disk, an optical disk, a computer Memory, a Read-Only Memory (ROM).
The present invention also provides a computer readable storage medium storing a computer program which, when executed by a processor of an electronic device, can implement:
acquiring historical preparation data of a silicon carbide MOS tube, and carrying out standardized processing on the historical preparation data to obtain standard data of the historical preparation data;
calculating parasitic parameters of the silicon carbide MOS tube according to the standard data, and correcting the parasitic parameters by using preset correction parameters to obtain standard parasitic parameters;
acquiring a spurious parameter, and monitoring the standard spurious parameter and the numerical transformation of the spurious parameter in the preparation process of the silicon carbide MOS tube to obtain monitoring data;
When the monitoring data is abnormal, extracting stray parameters in the preparation process from the monitoring data, and correcting the stray parameters in the preparation process to obtain updated stray parameters;
and monitoring numerical value transformation of the standard parasitic parameters and the updated parasitic parameters in the preparation process of the silicon carbide MOS tube to obtain updated monitoring data until the updated monitoring data reach the preset index parameter standard, and completing the preparation of the silicon carbide MOS tube.
In the several embodiments provided by the present invention, it should be understood that the disclosed apparatus, system and method may be implemented in other manners. For example, the system embodiments described above are merely illustrative, e.g., the division of the modules is merely a logical function division, and other manners of division may be implemented in practice.
The modules described as separate components may or may not be physically separate, and components shown as modules may or may not be physical units, may be located in one place, or may be distributed over multiple network units. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of this embodiment.
In addition, each functional module in the embodiments of the present invention may be integrated in one processing unit, or each unit may exist alone physically, or two or more units may be integrated in one unit. The integrated units can be realized in a form of hardware or a form of hardware and a form of software functional modules.
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential characteristics thereof.
The present embodiments are, therefore, to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference signs in the claims shall not be construed as limiting the claim concerned.
The embodiment of the application can acquire and process the related data based on the artificial intelligence technology. Among these, artificial intelligence (Artificial Intelligence, AI) is the theory, method, technique and application system that uses a digital computer or a digital computer-controlled machine to simulate, extend and extend human intelligence, sense the environment, acquire knowledge and use knowledge to obtain optimal results.
Furthermore, it is evident that the word "comprising" does not exclude other elements or steps, and that the singular does not exclude a plurality. Multiple units or systems as set forth in the system claims may also be implemented by means of one unit or system in software or hardware. The terms first, second, etc. are used to denote a name, but not any particular order.
Finally, it should be noted that the above-mentioned embodiments are merely for illustrating the technical solution of the present invention and not for limiting the same, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications and equivalents may be made to the technical solution of the present invention without departing from the spirit and scope of the technical solution of the present invention.
Claims (10)
1. A method for improving the manufacturing effect of a silicon carbide MOS tube, the method comprising:
acquiring historical preparation data of a silicon carbide MOS tube, and carrying out standardized processing on the historical preparation data to obtain standard data of the historical preparation data;
calculating parasitic parameters of the silicon carbide MOS tube according to the standard data, and correcting the parasitic parameters by using preset correction parameters to obtain standard parasitic parameters;
acquiring a spurious parameter, and monitoring the standard spurious parameter and the numerical transformation of the spurious parameter in the preparation process of the silicon carbide MOS tube to obtain monitoring data;
When the monitoring data is abnormal, extracting stray parameters in the preparation process from the monitoring data, and correcting the stray parameters in the preparation process to obtain updated stray parameters;
and monitoring numerical value transformation of the standard parasitic parameters and the updated parasitic parameters in the preparation process of the silicon carbide MOS tube to obtain updated monitoring data until the updated monitoring data reach the preset index parameter standard, and completing the preparation of the silicon carbide MOS tube.
2. The method for improving the manufacturing effect of silicon carbide MOS transistors according to claim 1, wherein the normalizing the historical manufacturing data to obtain standard data of the historical manufacturing data comprises:
performing missing value processing on the historical preparation data to obtain initial preparation data;
performing attribute coding on the initial preparation data to obtain coded data;
and unifying the formats of the coded data to obtain standard data.
3. The method for improving the manufacturing effect of the silicon carbide MOS tube according to claim 1, wherein the calculating the parasitic parameter of the silicon carbide MOS tube according to the standard data comprises:
The parasitic parameters were calculated using the following formula:
wherein ,
representing the parasitic parameter,/->
Represents the width of the drain-body junction in the standard data,/->
Represents the area of the drain-body junction in the standard data,/->
Representing the voltage of the drain source in the standard dataRate of change; />
Representing the standard voltage in said standard data, < >>
Respectively representing preset constants.
4. The method for improving the manufacturing effect of silicon carbide MOS transistors according to claim 1, wherein the correcting the parasitic parameter by using a preset correction parameter to obtain a standard parasitic parameter includes:
calculating according to the standard data and the correction parameters to obtain target correction parameters;
the target correction parameter is expressed as:
wherein ,
representing the target correction parameter,/->
Representing an initial correction parameter of said correction parameters, a +.>
Representing standard coefficients in said correction parameters, < >>
Represents the threshold voltage in the correction parameter, < >>
Representing the voltage change rate of the gate source in the standard data;
and updating the parasitic parameters by using the target correction parameters and preset fixed parasitic parameters to obtain standard parasitic parameters.
5. The method for improving the manufacturing effect of silicon carbide MOS transistors according to claim 4, wherein updating the parasitic parameters by using the target correction parameters and a preset fixed parasitic parameter to obtain standard parasitic parameters comprises:
updating the parasitic parameters by using the following formula to obtain the standard parasitic parameters:
wherein ,
representing said standard parasitic parameters->
Representing the target correction parameter,/->
Representing said fixed parasitic parameter,/->
Representing the voltage change rate of the drain and source in the standard data,/->
Representing preset calculation parameters.
6. The method for improving the manufacturing effect of the silicon carbide MOS tube according to claim 1, wherein the monitoring the standard parasitic parameter and the numerical transformation of the parasitic parameter in the manufacturing process of the silicon carbide MOS tube to obtain the monitoring data comprises:
acquiring historical monitoring time length of the preparation of the silicon carbide MOS tube, and carrying out average division on the historical monitoring time length to obtain a monitoring time point;
recording the standard parasitic parameters and the parameter values of the parasitic parameters according to the monitoring time points to obtain target parameter values;
and performing function fitting according to the target parameter value and the monitoring time point to obtain a parameter curve, and taking data in the parameter curve as monitoring data.
7. The method for improving the manufacturing effect of silicon carbide MOS transistors according to claim 1, wherein the correcting the spurious parameters in the manufacturing process to obtain updated spurious parameters includes:
carrying out numerical analysis on the stray parameters in the preparation process to obtain parameter proportions, and judging whether the parameter proportions are reasonable or not;
and when the parameter proportion is unreasonable, updating the spurious parameters according to a preset standard proportion to obtain updated spurious parameters.
8. A system for enhancing the fabrication of a silicon carbide MOS transistor, the system comprising:
the data processing module is used for acquiring historical preparation data of the silicon carbide MOS tube, and carrying out standardized processing on the historical preparation data to obtain standard data of the historical preparation data;
the parameter correction module is used for calculating parasitic parameters of the silicon carbide MOS tube according to the standard data, and correcting the parasitic parameters by utilizing preset correction parameters to obtain standard parasitic parameters;
the parameter conversion module is used for acquiring spurious parameters, monitoring the standard spurious parameters and the numerical conversion of the spurious parameters in the preparation process of the silicon carbide MOS tube, and obtaining monitoring data;
The parameter correction module is used for extracting the stray parameters in the preparation process from the monitoring data when the monitoring data are abnormal, and correcting the stray parameters in the preparation process to obtain updated stray parameters;
the silicon carbide MOS tube preparation module is used for monitoring the standard parasitic parameters and numerical conversion of the updated parasitic parameters in the preparation process of the silicon carbide MOS tube, obtaining updated monitoring data until the updated monitoring data reach the preset index parameter standard, and completing the preparation of the silicon carbide MOS tube.
9. An electronic device, the electronic device comprising:
at least one processor; the method comprises the steps of,
a memory communicatively coupled to the at least one processor; wherein,
the memory stores a computer program executable by the at least one processor to enable the at least one processor to perform the method of enhancing the silicon carbide MOS tube manufacturing effect as claimed in any one of claims 1 to 7.
10. A computer-readable storage medium storing a computer program, wherein the computer program, when executed by a processor, implements the method of improving the effect of silicon carbide MOS tube manufacturing according to any one of claims 1 to 7.
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