CN113899998B - IGBT parameter testing method and device, computer equipment and storage medium - Google Patents
IGBT parameter testing method and device, computer equipment and storage medium Download PDFInfo
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Abstract
The application relates to a test method and device of IGBT parameters, computer equipment and a storage medium. The method comprises the following steps: acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through the network analyzer; converting the transfer parameters to obtain impedance parameters of the IGBT device to be tested; and obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter. By adopting the method, the accuracy of the stray parameters of the obtained IGBT device to be tested can be improved.
Description
Technical Field
The present application relates to the field of power electronics technologies, and in particular, to a method and apparatus for testing IGBT parameters, a computer device, and a storage medium.
Background
With the development of power electronics technology, power electronics are increasingly being used for high frequency power conversion, while semiconductor devices play an important role in high frequency power conversion. The existence of the spurious parameters has a great influence on the action of the semiconductor device at high frequency, so that accurate test of the spurious parameters of the semiconductor device is required to provide sufficient technical support for the design and manufacture of the electric energy converter.
The commonly used power semiconductor devices are typically three-terminal devices, including a G-pole, an S-pole, and a D-pole, and in use, the on-off state between DS-poles is controlled by controlling the voltage of the GS-pole. The stray parameter evaluation of the power electronic device commonly used at present usually uses an impedance analyzer to directly test the impedance between every two of three ends to be tested of the power semiconductor in sequence, for example, the stray parameter between the test DS connects two poles of DS to the impedance analyzer through a coaxial cable, the pole G is suspended, and the stray parameter of the power semiconductor device is tested through the impedance between every two of the three ends to be tested.
However, the conventional method for testing the spurious parameters of the semiconductor device has a problem of low accuracy of testing the spurious parameters.
Disclosure of Invention
In view of the foregoing, it is desirable to provide a method, an apparatus, a computer device, and a storage medium for testing IGBT parameters that can improve accuracy of testing spurious parameters of a semiconductor device.
A method of testing IGBT parameters, the method comprising:
acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through the network analyzer;
Converting the transfer parameters to obtain impedance parameters of the IGBT device to be tested;
and obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter.
In one embodiment, the network analyzer is connected with the IGBT device to be tested through a coaxial cable, and the converting the transfer parameter to obtain the impedance parameter of the IGBT device to be tested includes:
And converting the transmission parameters according to the characteristic impedance value of the coaxial cable and a preset conversion formula to obtain the impedance parameters.
In one embodiment, the spurious parameters include: capacitance parameters, inductance parameters, and resistance parameters.
In one embodiment, the stray parameter includes a capacitance parameter, and the obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter includes:
And under the condition that the test frequency of the IGBT device to be tested is smaller than the resonance frequency, obtaining the capacitance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency.
In one embodiment, the spurious parameters include inductance parameters, and the obtaining, according to the impedance parameters, the spurious parameters of the IGBT device to be tested includes:
And under the condition that the test frequency of the IGBT device to be tested is larger than the resonance frequency, obtaining the inductance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency.
In one embodiment, the spurious parameters include a resistance parameter, and the obtaining, according to the impedance parameter, the spurious parameters of the IGBT device to be tested includes:
and under the condition that the test frequency of the IGBT device to be tested is equal to the resonance frequency, obtaining the resistance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency.
In one embodiment, the test frequency range of the IGBT device to be tested is 300KHz-300MHz.
A test device for IGBT parameters, the device comprising:
the first acquisition module is used for acquiring transfer parameters of the IGBT device to be tested from the network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through the network analyzer;
The conversion module is used for converting the transmission parameters to obtain impedance parameters;
And the second acquisition module is used for obtaining the stray parameters of the IGBT device to be tested according to the impedance parameters.
A computer device comprising a memory storing a computer program and a processor which when executing the computer program performs the steps of:
acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through the network analyzer;
converting the transfer parameters to obtain impedance parameters;
and obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter.
A computer readable storage medium having stored thereon a computer program which when executed by a processor performs the steps of:
acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through the network analyzer;
converting the transfer parameters to obtain impedance parameters;
and obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter.
According to the method, the device, the computer equipment and the storage medium for testing the IGBT parameters, the transmission parameters of the IGBT device to be tested, which are obtained from the network analyzer, are obtained by performing the S-parameter test on the IGBT device to be tested by adopting the double-end test method, and because the S-parameter test is performed on the IGBT device to be tested by adopting the double-end test method, the uncertainty of the result possibly occurring in the single-end test is avoided, all the transmission parameters can be obtained by only one-time wiring test, the accuracy of the obtained transmission parameters is improved, and the impedance parameters are obtained by converting the transmission parameters, so that the accuracy of the impedance parameters is also improved, and the accuracy of stray parameters of the IGBT device to be tested according to the impedance parameters is further improved.
Drawings
FIG. 1 is an application environment diagram of a test method for IGBT parameters in one embodiment;
FIG. 2 is a flow chart of a method for testing IGBT parameters in one embodiment;
FIG. 2a is a schematic diagram of a connection between an IGBT device and a network analyzer in one embodiment;
fig. 2b is a schematic diagram of an equivalent circuit of an IGBT device in one embodiment;
FIG. 2c is a schematic diagram illustrating the transformation of the star-delta of the equivalent circuit in one embodiment;
FIG. 3 is a schematic diagram of a series resistance-capacitance-inductance equivalent circuit and its impedance as a function of frequency according to an embodiment;
fig. 4 is an equivalent circuit schematic diagram of an IGBT device to be tested in the case where the test frequency of the IGBT device to be tested is less than the resonance frequency in one embodiment;
fig. 5 is an equivalent circuit schematic diagram of an IGBT device to be tested in the case where the test frequency of the IGBT device to be tested is greater than the resonance frequency in one embodiment;
fig. 6 is a schematic diagram of an equivalent circuit of an IGBT device to be tested in the case where the test frequency of the IGBT device to be tested is equal to the resonance frequency in one embodiment;
FIG. 7 is a block diagram of a test device for IGBT parameters in one embodiment;
Fig. 8 is an internal structural diagram of a computer device in one embodiment.
Detailed Description
The present application will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present application more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the application.
The IGBT parameter testing method provided by the application can be applied to an application environment shown in figure 1. The IGBT can be an insulated gate bipolar transistor, the network analyzer can be a vector network analyzer, and the network analyzer adopts a double-end test method to test the S parameters of the IGBT device to obtain the transfer parameters of the IGBT device to be tested. Optionally, the characteristic impedance of the coaxial connection line is 50Ω.
In one embodiment, as shown in fig. 2, a method for testing IGBT parameters is provided, and the method is applied to a computer device for example, it is understood that the method may also be applied to a server, and includes the following steps:
S201, acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through a network analyzer.
In a scenario that a network analyzer adopts a double-end test method to test S parameters of an IGBT device to be tested, the network analyzer needs to be connected with 4 terminals, and the IGBT device only has 3 terminals, so that any one of the terminals can be used as a common grounding end of a connecting wire. For example, the connection manner of the IGBT device to be tested and the network analyzer may be as shown in fig. 2 a. It should be noted that, any one of the 3 terminals of the IGBT device to be tested is taken as the common ground terminal of the connecting wire, which does not affect the final test result, and the G pole is taken as the common terminal below to introduce the test result, where the equivalent circuit of the IGBT device to be tested can be shown in fig. 2b, and it can be seen from fig. 2b that when the voltage between the two poles of the GD does not reach the trigger voltage, the stray capacitance between the three poles in the equivalent circuit of the IGBT presents a three-capacitor triangle connection, which represents the stray capacitance between each two poles, and the stray resistance and the stray inductance are generated in the packaging process, and are thus connected in series to each pole. However, for convenience in parameter evaluation, we convert the middle three capacitors into a star connection for evaluation, and then convert the three capacitors back into a triangle connection through star-angle transformation after parameter evaluation is completed, wherein the conversion schematic diagram of the star-angle transformation of the equivalent circuit can be shown in fig. 2 c. Specifically, the computer equipment acquires a transmission parameter (S parameter) of the IGBT device to be tested from the network analyzer, wherein the transmission parameter is obtained by the network analyzer through S parameter test of the IGBT device to be tested by adopting a double-end test method.
S202, converting the transmission parameters to obtain impedance parameters of the IGBT device to be tested.
Specifically, the transfer parameter (S parameter) represents a transfer function and a reflection function of the two ports, and when the IGBT parameter is tested, it is necessary to evaluate the transfer parameter by using the impedance parameter, and therefore, it is necessary to perform a certain parameter transformation to transform the transfer parameter into the impedance parameter. It should be noted that, the acquired transfer parameters of the IGBT device to be tested include four transfer parameters S11, S12, S21, and S22, where S11: when the ports 2 are matched, the reflection coefficient of the port 1; s22: when the ports 1 are matched, the reflection coefficient of the port 2; s12: when the ports 1 are matched, the reverse transmission coefficients from the ports 2 to the ports 1 are obtained; s21: when port 2 is matched, the forward transmission coefficients of port 1 to port 2 can be converted by the computer device to obtain corresponding impedance parameters Z11, Z12, Z21 and Z22.
And S203, obtaining the stray parameters of the IGBT device to be tested according to the impedance parameters.
Specifically, the computer equipment obtains the stray parameters of the IGBT device to be tested according to the impedance parameters. Optionally, the computer device may obtain the spurious parameters of the IGBT device to be tested according to the above impedance parameter changing with the test frequency of the IGBT device to be tested. Optionally, the stray parameters of the IGBT device to be tested may include: capacitance parameters, inductance parameters, and resistance parameters.
In the method for testing the IGBT parameters, the transmission parameters of the IGBT device to be tested, which are acquired by the computer equipment from the network analyzer, are obtained by performing the S-parameter test on the IGBT device to be tested by adopting the double-end test method, and because the S-parameter test is performed on the IGBT device to be tested by adopting the double-end test method, the possible uncertainty of the result of the single-end test is avoided, all the transmission parameters can be obtained by only one-time wiring test, the accuracy of the obtained transmission parameters is improved, and the impedance parameters are obtained by converting the transmission parameters, so that the accuracy of the impedance parameters is also improved, and the accuracy of stray parameters of the IGBT device to be tested according to the impedance parameters is further improved.
In the scenario that the network analyzer performs the S parameter test on the IGBT device to be tested by using the double-end test method, the network analyzer is connected to the IGBT device to be tested through a coaxial cable, and in one embodiment, the S202 includes: and converting the transmission parameters according to the characteristic impedance value of the coaxial cable and a preset conversion formula to obtain the impedance parameters.
Specifically, the computer equipment converts the transmission parameters according to the characteristic impedance value of the coaxial cable and a preset conversion formula to obtain the impedance parameters of the IGBT device to be tested. Optionally, the computer device may convert the above transfer parameters according to the following conversion formulas (1), (2), (3) and (4) to obtain the impedance parameters of the IGBT device to be tested:
where Z 0 is the characteristic impedance value of the coaxial cable, and optionally, the characteristic impedance value of the coaxial cable is typically 50Ω.
In the embodiment, the computer equipment converts the transmission parameters of the IGBT device to be tested according to the characteristic impedance value of the coaxial cable and a preset conversion formula, so that the efficiency of obtaining the impedance parameters of the IGBT device to be tested is improved; in addition, the computer equipment converts the transmission parameters of the IGBT device to be tested according to the characteristic impedance value of the coaxial cable and a preset conversion formula, so that the transmission parameters can be accurately converted, and the accuracy of the obtained impedance parameters of the IGBT device to be tested is improved.
In the scenario of obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter of the IGBT device to be tested, the stray parameter of the IGBT device to be tested includes a capacitance parameter. In one embodiment, the step S203 includes: and under the condition that the test frequency of the IGBT device to be tested is smaller than the resonance frequency, obtaining the capacitance parameter of the IGBT device to be tested through the change of the impedance parameter along with the frequency.
It should be noted that, because the equivalent circuit of the IGBT device to be tested can be regarded as a series connection of a resistor, a capacitor and an inductor, a resonant frequency (self-resonant frequency is abbreviated as SRF) must exist in the Z parameter, as shown in fig. 3, when the frequency of the IGBT device to be tested is lower than the resonant point, the equivalent circuit is mainly represented as a capacitive characteristic, and when the frequency of the IGBT device to be tested is lower than the resonant point, the capacitive parameter of the IGBT device to be tested is obtained; when the frequency is higher than the resonance point, the frequency is mainly expressed as inductance characteristics, and when the frequency of the IGBT device to be tested is higher than the resonance point, inductance parameters of the IGBT device to be tested are obtained; when the frequency is equal to the resonance point, the frequency is mainly represented as resistance characteristic, the impedance phase is 0, and the resistance parameter of the IGBT device to be tested is obtained when the frequency is equal to or lower than the resonance point. Therefore, in order to ensure that the capacitance parameter, the inductance parameter and the resistance parameter of the IGBT device to be tested can be detected, it is necessary to ensure that the resonance point must appear in the test interval, alternatively, the test frequency range of the IGBT device to be tested can be set to 300KHz-300MHz, and the resonance point appears in the test interval. Specifically, under the condition that the test frequency of the IGBT device to be tested is smaller than the resonance frequency, the computer equipment obtains the capacitance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency of the IGBT device to be tested. In addition, it should be noted that, since the capacitance parameter is tested as a star connection when the capacitance parameter is obtained, and the actual equivalent model of the spurious parameter is a triangle connection, it is also required to convert the same into a triangle connection. Alternatively, the value of the capacitance parameter may be extracted from the impedance parameter when the frequency of the IGBT device to be tested is below 1 MHz. It will be appreciated that since the resistance and reactance have a small effect on the impedance value at low frequencies, the equivalent circuit in this case can be approximated as shown in fig. 4, where the corresponding capacitance parameter values can be extracted as follows:
In the formula, V1 and V2 represent voltages of two ports, I1 and I2 represent currents flowing into the two ports, and capacitance parameters X CS、XCG、XCD of the IGBT device to be tested can be obtained through the formula, star-delta conversion is needed to obtain final capacitance parameters of the IGBT device to be tested in the triangular wiring, and the conversion formula is as follows:
the impedance parameter of the IGBT device to be measured at the specified frequency is obtained by the above method, and the impedance parameter X is multiplied by jω to obtain the capacitance parameter value, where j is an imaginary unit, and ω is the calculated angular frequency.
In this embodiment, when the test frequency of the IGBT device to be tested is smaller than the resonance frequency, the computer device can accurately obtain the capacitance parameter of the IGBT device to be tested by changing the impedance parameter of the IGBT device to be tested along with the test frequency of the IGBT device to be tested, thereby improving the accuracy of obtaining the capacitance parameter of the IGBT device to be tested.
In the scenario of obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter of the IGBT device to be tested, the stray parameter of the IGBT device to be tested includes an inductance parameter. In one embodiment, the step S203 includes: and under the condition that the test frequency of the IGBT device to be tested is larger than the resonance frequency, obtaining the inductance parameter of the IGBT device to be tested through the change of the impedance parameter along with the frequency.
Specifically, when the test frequency of the IGBT device to be tested is greater than the resonance frequency, the inductance parameter of the IGBT device to be tested can be obtained from the impedance parameter of the IGBT device to be tested, because the influence of the capacitance and the resistance on the impedance value is smaller when the frequency is higher than the resonance frequency, the equivalent circuit is shown in fig. 5, and at this time, the corresponding inductance parameter value can be extracted as follows:
the impedance parameter of the IGBT device to be measured at the specified frequency is obtained by the above method, and the impedance X is divided by jω to obtain the inductance parameter value, where j is an imaginary unit, and ω is the calculated angular frequency.
In this embodiment, when the test frequency of the IGBT device to be tested is greater than the resonance frequency, the computer device can accurately obtain the inductance parameter of the IGBT device to be tested by changing the impedance parameter of the IGBT device to be tested along with the test frequency of the IGBT device to be tested, thereby improving the accuracy of obtaining the inductance parameter of the IGBT device to be tested.
In the scenario of obtaining the stray parameter of the IGBT device to be tested according to the impedance parameter of the IGBT device to be tested, the stray parameter of the IGBT device to be tested includes a resistance parameter. In one embodiment, the step S203 includes: and under the condition that the test frequency of the IGBT device to be tested is equal to the resonance frequency, obtaining the resistance parameter of the IGBT device to be tested through the change of the impedance parameter along with the frequency.
Specifically, when the test frequency of the IGBT device to be tested is equal to the resonance frequency, the resistance parameter of the IGBT device to be tested can be obtained from the impedance parameter of the IGBT device to be tested, and the addition of the stray inductance and the stray capacitance occurs to generate series resonance impedance value to be just equal to 0 at the resonance frequency, and the equivalent circuit is shown in fig. 6, where it is to be noted that, because the equivalent circuits corresponding to the four parameters of the impedance parameters Z11, Z12, Z21 and Z22 are not the same, the resonance frequencies are also different, and when the impedance is obtained, the respective resonance frequencies should be adopted, and the value of the corresponding resistance parameter is extracted as follows:
In this embodiment, under the condition that the test frequency of the IGBT device to be tested is equal to the resonance frequency, the computer device can accurately obtain the resistance parameter of the IGBT device to be tested by changing the impedance parameter of the IGBT device to be tested along with the test frequency of the IGBT device to be tested, thereby improving the accuracy of obtaining the resistance parameter of the IGBT device to be tested.
It should be understood that, although the steps in the flowchart of fig. 2 are shown in sequence as indicated by the arrows, the steps are not necessarily performed in sequence as indicated by the arrows. The steps are not strictly limited to the order of execution unless explicitly recited herein, and the steps may be executed in other orders. Moreover, at least a portion of the steps in fig. 2 may include a plurality of steps or stages, which are not necessarily performed at the same time, but may be performed at different times, and the order of the steps or stages is not necessarily sequential, but may be performed in rotation or alternatively with at least a portion of the steps or stages in other steps or other steps.
In one embodiment, as shown in fig. 7, there is provided a test apparatus for IGBT parameters, including: the device comprises a first acquisition module, a conversion module and a second acquisition module, wherein:
the first acquisition module is used for acquiring transfer parameters of the IGBT device to be tested from the network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through a network analyzer.
And the conversion module is used for converting the transmission parameters to obtain the impedance parameters of the IGBT device to be tested.
And the second acquisition module is used for obtaining the stray parameters of the IGBT device to be tested according to the impedance parameters.
Optionally, the spurious parameters include: capacitance parameters, inductance parameters, and resistance parameters.
Optionally, the test frequency range of the IGBT device to be tested is 300KHz-300MHz.
The testing device for IGBT parameters provided in this embodiment may execute the above method embodiment, and its implementation principle and technical effects are similar, and will not be described herein.
On the basis of the above embodiment, optionally, the network analyzer is connected with the IGBT device to be tested through a coaxial cable, and the above conversion module includes: a conversion unit in which:
the conversion unit is used for converting the transmission parameters according to the characteristic impedance value of the coaxial cable and a preset conversion formula to obtain impedance parameters.
The testing device for IGBT parameters provided in this embodiment may execute the above method embodiment, and its implementation principle and technical effects are similar, and will not be described herein.
On the basis of the foregoing embodiment, optionally, the stray parameter includes a capacitance parameter, and the second obtaining module includes: a first acquisition unit in which:
The first acquisition unit is used for acquiring capacitance parameters of the IGBT device to be tested through the change of the impedance parameters along with the test frequency under the condition that the test frequency of the IGBT device to be tested is smaller than the resonance frequency.
The testing device for IGBT parameters provided in this embodiment may execute the above method embodiment, and its implementation principle and technical effects are similar, and will not be described herein.
On the basis of the foregoing embodiment, optionally, the spurious parameter includes an inductance parameter, and the second obtaining module includes: a second acquisition unit in which:
the second acquisition unit is used for obtaining the inductance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency under the condition that the test frequency of the IGBT device to be tested is larger than the resonance frequency.
The testing device for IGBT parameters provided in this embodiment may execute the above method embodiment, and its implementation principle and technical effects are similar, and will not be described herein.
On the basis of the foregoing embodiment, optionally, the spurious parameter includes an inductance parameter, and the second obtaining module includes: a third acquisition unit in which:
and the third acquisition unit is used for acquiring the resistance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency under the condition that the test frequency of the IGBT device to be tested is equal to the resonance frequency.
The testing device for IGBT parameters provided in this embodiment may execute the above method embodiment, and its implementation principle and technical effects are similar, and will not be described herein.
For specific limitations of the test device for the IGBT parameters, reference may be made to the above limitations of the test method for the IGBT parameters, and no further description is given here. The modules in the above-mentioned IGBT parameter testing device may be implemented in whole or in part by software, hardware, or a combination thereof. The above modules may be embedded in hardware or may be independent of a processor in the computer device, or may be stored in software in a memory in the computer device, so that the processor may call and execute operations corresponding to the above modules.
In one embodiment, a computer device is provided, which may be a terminal, and the internal structure thereof may be as shown in fig. 8. The computer device includes a processor, a memory, a communication interface, a display screen, and an input device connected by a system bus. Wherein the processor of the computer device is configured to provide computing and control capabilities. The memory of the computer device includes a non-volatile storage medium and an internal memory. The non-volatile storage medium stores an operating system and a computer program. The internal memory provides an environment for the operation of the operating system and computer programs in the non-volatile storage media. The communication interface of the computer device is used for carrying out wired or wireless communication with an external terminal, and the wireless mode can be realized through WIFI, an operator network, NFC (near field communication) or other technologies. The computer program, when executed by a processor, implements a method of testing IGBT parameters. The display screen of the computer equipment can be a liquid crystal display screen or an electronic ink display screen, and the input device of the computer equipment can be a touch layer covered on the display screen, can also be keys, a track ball or a touch pad arranged on the shell of the computer equipment, and can also be an external keyboard, a touch pad or a mouse and the like.
It will be appreciated by those skilled in the art that the structure shown in FIG. 8 is merely a block diagram of some of the structures associated with the present inventive arrangements and is not limiting of the computer device to which the present inventive arrangements may be applied, and that a particular computer device may include more or fewer components than shown, or may combine some of the components, or have a different arrangement of components.
In one embodiment, a computer device is provided comprising a memory and a processor, the memory having stored therein a computer program, the processor when executing the computer program performing the steps of:
Acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through a network analyzer;
Converting the transfer parameters to obtain impedance parameters of the IGBT device to be tested;
and obtaining the stray parameters of the IGBT device to be tested according to the impedance parameters.
The computer device provided in the foregoing embodiments has similar implementation principles and technical effects to those of the foregoing method embodiments, and will not be described herein in detail.
In one embodiment, a computer readable storage medium is provided having a computer program stored thereon, which when executed by a processor, performs the steps of:
Acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through a network analyzer;
Converting the transfer parameters to obtain impedance parameters of the IGBT device to be tested;
and obtaining the stray parameters of the IGBT device to be tested according to the impedance parameters.
The computer readable storage medium provided in the above embodiment has similar principle and technical effects to those of the above method embodiment, and will not be described herein.
Those skilled in the art will appreciate that implementing all or part of the above described methods may be accomplished by way of a computer program stored on a non-transitory computer readable storage medium, which when executed, may comprise the steps of the embodiments of the methods described above. Any reference to memory, storage, database, or other medium used in embodiments provided herein may include at least one of non-volatile and volatile memory. The nonvolatile Memory may include Read-Only Memory (ROM), magnetic tape, floppy disk, flash Memory, optical Memory, or the like. Volatile memory can include random access memory (Random Access Memory, RAM) or external cache memory. By way of illustration, and not limitation, RAM can be in various forms such as static random access memory (Static Random Access Memory, SRAM) or dynamic random access memory (Dynamic Random Access Memory, DRAM), etc.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The above examples illustrate only a few embodiments of the application, which are described in detail and are not to be construed as limiting the scope of the application. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the application, which are all within the scope of the application. Accordingly, the scope of protection of the present application is to be determined by the appended claims.
Claims (10)
1. A method for testing IGBT parameters, the method comprising:
acquiring transfer parameters of an IGBT device to be tested from a network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through the network analyzer; the network analyzer is connected with the IGBT device to be tested through a coaxial cable;
Converting the transfer parameters according to the characteristic impedance value of the coaxial cable and a preset conversion formula to obtain the impedance parameters of the IGBT device to be tested;
Obtaining the stray parameter of the IGBT device to be tested according to the change of the impedance parameter along with the test frequency of the IGBT device to be tested; the spurious parameters include: capacitance parameters, inductance parameters, and resistance parameters; and the inductance parameter is obtained through the change of the impedance parameter along with the test frequency under the condition that the test frequency of the IGBT device to be tested is larger than the resonance frequency.
2. The method of claim 1, wherein the transfer parameter represents a transfer function and a reflection function of a dual port of the IGBT device.
3. The method of claim 1, wherein the coaxial cable has a characteristic impedance value of 50Ω.
4. The method according to claim 3, wherein the spurious parameters include capacitance parameters, and the obtaining the spurious parameters of the IGBT device to be tested according to the impedance parameters includes:
and under the condition that the test frequency of the IGBT device to be tested is smaller than the resonance frequency, obtaining the capacitance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency.
5. The method of claim 4, wherein the equivalent circuit of the IGBT device under test is a series of a resistor, a capacitor, and an inductor.
6. The method of claim 5, wherein the spurious parameters include a resistance parameter, and the obtaining the spurious parameters of the IGBT device under test according to the impedance parameter includes:
and under the condition that the test frequency of the IGBT device to be tested is equal to the resonance frequency, obtaining the resistance parameter of the IGBT device to be tested through the change of the impedance parameter along with the test frequency.
7. A method according to any one of claims 1 to 6, wherein the IGBT device under test has a test frequency in the range 300KHz-300MHz.
8. A test device for IGBT parameters, the device comprising:
The first acquisition module is used for acquiring transfer parameters of the IGBT device to be tested from the network analyzer; the transmission parameters are obtained by performing S parameter test on the IGBT device to be tested by adopting a double-end test method through the network analyzer; the network analyzer is connected with the IGBT device to be tested through a coaxial cable;
the conversion module is used for converting the transmission parameters according to the characteristic impedance value of the coaxial cable and a preset conversion formula to obtain the impedance parameters of the IGBT device to be tested;
The second acquisition module is used for obtaining the stray parameter of the IGBT device to be tested according to the change of the impedance parameter along with the test frequency of the IGBT device to be tested; the spurious parameters include: capacitance parameters, inductance parameters, and resistance parameters; and under the condition that the test frequency of the IGBT device to be tested is larger than the resonance frequency, the inductance parameter is obtained through the change of the impedance parameter along with the test frequency.
9. A computer device comprising a memory and a processor, the memory storing a computer program, characterized in that the processor implements the steps of the method of any of claims 1 to 7 when the computer program is executed.
10. A computer readable storage medium, on which a computer program is stored, characterized in that the computer program, when being executed by a processor, implements the steps of the method of any of claims 1 to 7.
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