CN109637944B - Thin film transistor structure and method for measuring channel resistance and contact resistance - Google Patents
Thin film transistor structure and method for measuring channel resistance and contact resistance Download PDFInfo
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- CN109637944B CN109637944B CN201811290149.2A CN201811290149A CN109637944B CN 109637944 B CN109637944 B CN 109637944B CN 201811290149 A CN201811290149 A CN 201811290149A CN 109637944 B CN109637944 B CN 109637944B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/14—Measuring as part of the manufacturing process for electrical parameters, e.g. resistance, deep-levels, CV, diffusions by electrical means
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/08—Measuring resistance by measuring both voltage and current
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R27/00—Arrangements for measuring resistance, reactance, impedance, or electric characteristics derived therefrom
- G01R27/02—Measuring real or complex resistance, reactance, impedance, or other two-pole characteristics derived therefrom, e.g. time constant
- G01R27/20—Measuring earth resistance; Measuring contact resistance, e.g. of earth connections, e.g. plates
- G01R27/205—Measuring contact resistance of connections, e.g. of earth connections
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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Abstract
The invention provides a thin film transistor structure and a method for measuring channel resistance and contact resistance. The thin film transistor structure includes: the measuring device comprises a substrate, a grid arranged on the substrate, a grid insulating layer arranged on the grid, an active layer arranged on the grid insulating layer, and source electrodes, measuring electrodes and drain electrodes which are arranged on the active layer at intervals in sequence; the distance between the measuring electrode and the source electrode is different from the distance between the measuring electrode and the drain electrode, the measuring electrode is arranged on the active layer, the channel resistance and the contact resistance of the thin film transistor are determined by measuring the voltage on the measuring electrode and the current flowing through the drain electrode, and the channel resistance and the contact resistance of the thin film transistor can be rapidly and accurately measured through a single thin film transistor.
Description
Technical Field
The invention relates to the technical field of display, in particular to a thin film transistor structure and a method for measuring channel resistance and contact resistance.
Background
With the development of display technology, flat panel display devices have advantages of high image quality, power saving, thin body, and wide application range, and thus are widely used in various consumer electronics products such as mobile phones, televisions, personal digital assistants, digital cameras, notebook computers, and desktop computers, which become the mainstream of display devices.
An Active Matrix (AM) flat panel display device is the most commonly used display device at present, and controls the input of a data signal through a Thin Film Transistor (TFT) switch, thereby controlling the display of a picture.
The current display technology is continuously developing towards high resolution, for example, the resolution of a mobile phone has reached a level of 1080P (1080 × 1920), the resolution of a television has reached a level of 4K (4096 × 2160), and the driving capability of a thin film transistor needs to be continuously improved along with the continuous improvement of the resolution, and the key to the improvement of the driving capability of the thin film transistor is how to obtain a larger on-current at a lower driving voltage, so that the resistance of the thin film transistor needs to be reduced as much as possible.
The thin film transistor comprises a channel resistor and a contact resistor, wherein the contact resistor is mainly from contact between an active layer and a source/drain electrode, and the contact resistor can influence the calculation of mobility and even threshold voltage, so that the channel resistor and the contact resistor are very important to accurately calculate, and can accurately help people to calculate intrinsic mobility and threshold voltage of an amorphous silicon thin film, thereby providing a basis for improving the driving capability of the thin film transistor.
The traditional method for calculating the contact resistance is a Transfer Length Measurement (TLM), which measures a plurality of thin film transistors with different channel lengths, calculates the total resistance, and then defines the intercept between the resistance and the y-axis as 2 times of the contact resistance to obtain the contact resistance.
Disclosure of Invention
The invention aims to provide a thin film transistor structure which can quickly and accurately measure the channel resistance and the contact resistance of a thin film transistor through a single thin film transistor.
The invention also aims to provide a method for measuring the channel resistance and the contact resistance, which can quickly and accurately measure the channel resistance and the contact resistance of the thin film transistor through a single thin film transistor.
To achieve the above object, the present invention provides a thin film transistor structure, comprising: the measuring device comprises a substrate, a grid arranged on the substrate, a grid insulating layer arranged on the grid, an active layer arranged on the grid insulating layer, and source electrodes, measuring electrodes and drain electrodes which are arranged on the active layer at intervals in sequence;
the measurement electrode is spaced apart from the source by a distance different from the distance between the measurement electrode and the drain.
The active layer is made of amorphous silicon and comprises a non-doped layer arranged on the gate insulating layer and doped layers positioned between the source electrode and the non-doped layer, between the measuring electrode and the non-doped layer and between the drain electrode and the non-doped layer.
The doped layer is an N-type doped layer.
The material of the active layer is a metal oxide semiconductor material.
The spacing distance between the measuring electrode and the source electrode is larger than the spacing distance between the measuring electrode and the drain electrode.
The invention also provides a method for measuring the channel resistance and the contact resistance, which comprises the following steps:
step S1, providing a thin film transistor, where the thin film transistor includes: the measuring device comprises a substrate, a grid arranged on the substrate, a grid insulating layer arranged on the grid, an active layer arranged on the grid insulating layer, and source electrodes, measuring electrodes and drain electrodes which are arranged on the active layer at intervals in sequence; the spacing distance between the measuring electrode and the source electrode is different from the spacing distance between the measuring electrode and the drain electrode;
step S2, grounding the source electrode of the thin film transistor, connecting the drain electrode to a first voltage, and measuring the current flowing through the drain electrode of the thin film transistor and the voltage on the measuring electrode;
step S3, determining the channel resistance and the contact resistance of the thin film transistor according to the current flowing through the drain electrode of the thin film transistor and the voltage on the measuring electrode;
wherein the formula for determining the channel resistance and the contact resistance of the thin film transistor is as follows:
wherein R is1Is channel resistance, R2Is contact resistance, VAFor measuring the voltage on the electrodes, V1Is a first voltage, XAFor measuring the separation distance between the electrode and the source, L is the channel length, IDIs the current flowing through the drain of the thin film transistor.
The active layer is made of amorphous silicon and comprises a non-doped layer arranged on the gate insulating layer and doped layers positioned between the source electrode and the non-doped layer, between the measuring electrode and the non-doped layer and between the drain electrode and the non-doped layer.
The doped layer is an N-type doped layer.
The material of the active layer is a metal oxide semiconductor material.
The spacing distance between the measuring electrode and the source electrode is larger than the spacing distance between the measuring electrode and the drain electrode.
The invention has the beneficial effects that: the present invention provides a thin film transistor structure, comprising: the measuring device comprises a substrate, a grid arranged on the substrate, a grid insulating layer arranged on the grid, an active layer arranged on the grid insulating layer, and source electrodes, measuring electrodes and drain electrodes which are arranged on the active layer at intervals in sequence; the distance between the measuring electrode and the source electrode is different from the distance between the measuring electrode and the drain electrode, the measuring electrode is arranged on the active layer, the channel resistance and the contact resistance of the thin film transistor are determined by measuring the voltage on the measuring electrode and the current flowing through the drain electrode, and the channel resistance and the contact resistance of the thin film transistor can be rapidly and accurately measured through a single thin film transistor. The invention also provides a method for measuring the channel resistance and the contact resistance, which can quickly and accurately measure the channel resistance and the contact resistance of the thin film transistor through a single thin film transistor.
Drawings
For a better understanding of the nature and technical aspects of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description and are not intended to limit the invention.
In the drawings, there is shown in the drawings,
FIG. 1 is a top view of a first embodiment of a thin film transistor structure of the present invention;
FIG. 2 is a cross-sectional view taken along line A-A of FIG. 1;
FIG. 3 is a diagram illustrating a second embodiment of a thin film transistor structure according to the present invention;
FIG. 4 is a cross-sectional view taken at B-B of FIG. 3;
FIG. 5 is an equivalent circuit diagram of the channel resistance and contact resistance measurement method of the present invention;
fig. 6 is a flow chart of a method of measuring channel resistance and contact resistance according to the present invention.
Detailed Description
To further illustrate the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.
Referring to fig. 1 and 2 or fig. 3 and 4, the present invention provides a thin film transistor structure, including: the measuring device comprises a substrate base plate 1, a grid electrode 2 arranged on the substrate base plate 1, a grid electrode insulating layer 3 arranged on the grid electrode 2, an active layer 4 arranged on the grid electrode insulating layer 3, and a source electrode 5, a measuring electrode 6 and a drain electrode 7 which are arranged on the active layer 4 at intervals in sequence;
the distance separating the measuring electrode 6 from the source electrode 5 is different from the distance separating the measuring electrode 6 from the drain electrode 7.
Specifically, the thin film transistor structure of the present invention is beneficial to measuring channel resistance and contact resistance, when measuring, the source 5 of the thin film transistor may be grounded, the drain 7 is connected to a first voltage, and the current flowing through the drain 7 of the thin film transistor and the voltage on the measuring electrode 6 are measured, and then the channel resistance and the contact resistance of the thin film transistor are determined according to the current at the drain 7 end of the thin film transistor and the voltage on the measuring electrode 6, where the formula for determining the channel resistance and the contact resistance of the thin film transistor is:
wherein R is1Is channel resistance, R2Is contact resistance, VAFor measuring the voltage, V, on the electrode 61Is a first voltage, XATo measure the separation distance between the electrode 6 and the source 5, L is the channel length, IDIs the current flowing through the drain 7 of the thin film transistor.
Specifically, as shown in fig. 5, the contact resistance R2Is the contact resistance R between the source electrode 5 and the active layer 421And the contact resistance R between the drain electrode 7 and the active layer 422The sum of (1).
It should be noted that the measurement principle of the above measurement process is as follows: as shown in fig. 5, the voltage at the measuring electrode 6 can be measured at the measuring electrode 6, but no current passes through, so there is no contact resistance, and according to the relationship between current and voltage resistance, since the current from the source 5 to the measuring electrode 6 is equal to the current from the source 5 to the drain 7, the following formula can be obtained:
ID＝VA/(XAR1/L+R2)＝VD/(R1+2R2)；
according to the above-mentioned results, it can be known that,
therefore, the measuring electrode 6 is arranged on the active layer 4, and the channel resistance and the contact resistance of the thin film transistor can be determined by measuring the voltage on the measuring electrode 6 and the current flowing through the drain electrode 7, so that the channel resistance and the contact resistance of the thin film transistor can be rapidly and accurately measured through a single thin film transistor.
Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, the material of the active layer 4 is amorphous silicon, and includes an undoped layer 41 disposed on the gate insulating layer 3, and doped layers 42 located between the source electrode 5 and the undoped layer 41, between the measurement electrode 6 and the undoped layer 41, and between the drain electrode 7 and the undoped layer 41.
Preferably, the doped layer 42 is an N-type doped layer, and of course, the doped layer 42 may be a P-type doped layer.
Specifically, as shown in fig. 3 and 4, in the second embodiment of the present invention, the material of the active layer 4 is a metal oxide semiconductor material, and the active layer 4 includes a metal oxide semiconductor thin film.
Preferably, the material of the active layer 4 is Indium Gallium Zinc Oxide (IGZO).
Preferably, the distance between the measuring electrode 6 and the source 5 is greater than the distance between the measuring electrode 6 and the drain 7, although this is not a limitation of the present invention, and the distance between the measuring electrode 6 and the source 5 may be less than the distance between the measuring electrode 6 and the drain 7.
Specifically, the gate 2, the source 5, the measurement electrode 6, and the drain 7 are made of one or a combination of molybdenum, aluminum, and copper, the substrate 1 is a glass substrate, and the gate insulating layer 3 is made of one or a combination of silicon oxide and silicon nitride.
Referring to fig. 6, the present invention further provides a method for measuring channel resistance and contact resistance, including the following steps:
step S1, providing a thin film transistor, where the thin film transistor includes: the measuring device comprises a substrate base plate 1, a grid electrode 2 arranged on the substrate base plate 1, a grid electrode insulating layer 3 arranged on the grid electrode 2, an active layer 4 arranged on the grid electrode insulating layer 3, and a source electrode 5, a measuring electrode 6 and a drain electrode 7 which are arranged on the active layer 4 at intervals in sequence; the distance separating the measuring electrode 6 from the source electrode 5 is different from the distance separating the measuring electrode 6 from the drain electrode 7.
Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, the material of the active layer 4 is crystalline silicon, and includes an undoped layer 41 disposed on the gate insulating layer 3, and doped layers 42 located between the source electrode 5 and the undoped layer 41, between the measurement electrode 6 and the undoped layer 41, and between the drain electrode 7 and the undoped layer 41.
Preferably, the doped layer 42 is an N-type doped layer, and of course, the doped layer 42 may be a P-type doped layer.
Specifically, as shown in fig. 3 and 4, in the second embodiment of the present invention, the material of the active layer 4 is a metal oxide semiconductor material, and the active layer 4 includes a metal oxide semiconductor thin film.
Preferably, the material of the active layer 4 is Indium Gallium Zinc Oxide (IGZO).
Preferably, the distance between the measuring electrode 6 and the source 5 is greater than the distance between the measuring electrode 6 and the drain 7, although this is not a limitation of the present invention, and the distance between the measuring electrode 6 and the source 5 may be less than the distance between the measuring electrode 6 and the drain 7.
Specifically, the gate 2, the source 5, the measurement electrode 6 and the drain 7 are made of one or a combination of molybdenum, aluminum and copper, the substrate 1 is a glass substrate, and the gate insulating layer 3 is made of one or a combination of silicon oxide and silicon nitride.
Step S2, grounding the source 5 of the thin film transistor, connecting the drain 7 to a first voltage, and measuring the current flowing through the drain 7 of the thin film transistor and the voltage on the measuring electrode 6.
Step S3, determining the channel resistance and the contact resistance of the thin film transistor according to the current flowing through the drain electrode 7 of the thin film transistor and the voltage on the measuring electrode 6;
wherein the formula for determining the channel resistance and the contact resistance of the thin film transistor is as follows:
wherein R is1Is channel resistance, R2Is contact resistance, VAFor measuring the voltage, V, on the electrode 61Is a first voltage, XATo measure the separation distance between the electrode 6 and the source 5, L is the channel length, IDIs the current flowing through the drain 7 of the thin film transistor.
Specifically, as shown in fig. 5, the contact resistance R2Is the contact resistance R between the source electrode 5 and the active layer 421And the contact resistance R between the drain electrode 7 and the active layer 422The sum of (1).
It should be noted that the measurement principle of the above measurement method is as follows: as shown in fig. 5, the voltage at the measuring electrode 6 can be measured at the measuring electrode 6, but no current passes through, so there is no contact resistance, and according to the relationship between current and voltage resistance, since the current from the source 5 to the measuring electrode 6 is equal to the current from the source 5 to the drain 7, the following formula can be obtained:
ID＝VA/(XAR1/L+R2)＝VD/(R1+2R2)；
according to the above-mentioned results, it can be known that,
therefore, the measuring electrode 6 is arranged on the active layer 4, and the channel resistance and the contact resistance of the thin film transistor can be determined by measuring the voltage on the measuring electrode 6 and the current flowing through the drain electrode 7, so that the channel resistance and the contact resistance of the thin film transistor can be rapidly and accurately measured through a single thin film transistor.
In summary, the present invention provides a thin film transistor structure, including: the measuring device comprises a substrate, a grid arranged on the substrate, a grid insulating layer arranged on the grid, an active layer arranged on the grid insulating layer, and source electrodes, measuring electrodes and drain electrodes which are arranged on the active layer at intervals in sequence; the distance between the measuring electrode and the source electrode is different from the distance between the measuring electrode and the drain electrode, the measuring electrode is arranged on the active layer, the channel resistance and the contact resistance of the thin film transistor are determined by measuring the voltage on the measuring electrode and the current flowing through the drain electrode, and the channel resistance and the contact resistance of the thin film transistor can be rapidly and accurately measured through a single thin film transistor. The invention also provides a method for measuring the channel resistance and the contact resistance, which can quickly and accurately measure the channel resistance and the contact resistance of the thin film transistor through a single thin film transistor.
As described above, it will be apparent to those skilled in the art that other various changes and modifications may be made based on the technical solution and concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.
Claims (5)
1. A method for measuring channel resistance and contact resistance is characterized by comprising the following steps:
step S1, providing a thin film transistor, where the thin film transistor includes: the measuring device comprises a substrate base plate (1), a grid electrode (2) arranged on the substrate base plate (1), a grid electrode insulating layer (3) arranged on the grid electrode (2), an active layer (4) arranged on the grid electrode insulating layer (3), and source electrodes (5), measuring electrodes (6) and drain electrodes (7) which are arranged on the active layer (4) at intervals in sequence; the separation distance between the measuring electrode (6) and the source electrode (5) is different from the separation distance between the measuring electrode (6) and the drain electrode (7);
step S2, grounding the source electrode (5) of the thin film transistor, connecting the drain electrode (7) with a first voltage, and measuring the current flowing through the drain electrode (7) of the thin film transistor and the voltage on the measuring electrode (6);
step S3, determining the channel resistance and the contact resistance of the thin film transistor according to the current flowing through the drain electrode (7) of the thin film transistor and the voltage on the measuring electrode (6);
wherein the formula for determining the channel resistance and the contact resistance of the thin film transistor is as follows:
wherein R is1Is channel resistance, R2Is contact resistance, VAFor measuring the voltage, V, on the electrode (6)1Is a first voltage, XAFor measuring the separation distance between the electrode (6) and the source (5), L is the channel length, IDIs the current flowing through the drain (7) of the thin film transistor.
2. The method of claim 1, wherein the active layer (4) is made of amorphous silicon and comprises an undoped layer (41) disposed on the gate insulating layer (3) and doped layers (42) disposed between the source electrode (5) and the undoped layer (41), between the measurement electrode (6) and the undoped layer (41), and between the drain electrode (7) and the undoped layer (41).
3. The method of measuring channel resistance and contact resistance as claimed in claim 2, wherein the doped layer (42) is an N-type doped layer.
4. The method for measuring channel resistance and contact resistance according to claim 1, wherein the material of the active layer (4) is a metal oxide semiconductor material.
5. The method of measuring channel resistance and contact resistance according to claim 1, wherein a separation distance between the measuring electrode (6) and the source electrode (5) is greater than a separation distance between the measuring electrode (6) and the drain electrode (7).
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| CN201811290149.2A CN109637944B (en) | 2018-10-31 | 2018-10-31 | Thin film transistor structure and method for measuring channel resistance and contact resistance |
| PCT/CN2018/116007 WO2020087581A1 (en) | 2018-10-31 | 2018-11-16 | Thin film transistor structure and method for measuring channel resistance and contact resistance |
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| CN113884765A (en) * | 2020-07-02 | 2022-01-04 | 昆山微电子技术研究院 | Method, device, equipment and storage medium for measuring ohmic contact ratio contact resistance |
| US11867745B2 (en) | 2020-10-16 | 2024-01-09 | Changxin Memory Technologies, Inc. | Parasitic capacitance detection method, memory and readable storage medium |
| CN114384322B (en) * | 2020-10-16 | 2023-07-18 | 长鑫存储技术有限公司 | Method for measuring contact resistance of transistor test device and computer readable medium |
| CN115358170A (en) * | 2022-08-17 | 2022-11-18 | 长鑫存储技术有限公司 | Contact resistance acquisition method and device, electronic equipment and storage medium |
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| JPH01119068A (en) * | 1987-10-30 | 1989-05-11 | Fujitsu Ltd | Thin-film transistor |
| JP2008060418A (en) * | 2006-08-31 | 2008-03-13 | Mitsui Mining & Smelting Co Ltd | Method of forming aluminum alloy wiring circuit and method of forming display device element structure |
| CN104407224A (en) * | 2014-11-27 | 2015-03-11 | 合肥京东方光电科技有限公司 | Semiconductor-metal contact resistivity detection method and array substrate |
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| CN103217840A (en) * | 2013-04-18 | 2013-07-24 | 合肥京东方光电科技有限公司 | Array base plate, preparing method and liquid crystal display |
| CN103575998A (en) * | 2013-10-25 | 2014-02-12 | 中国科学院半导体研究所 | Method for testing resistance of non-junction transistors |
| CN105336728A (en) * | 2014-07-10 | 2016-02-17 | 中芯国际集成电路制造(上海)有限公司 | Test structure, manufacturing method of the test structure and test method |
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