CN103235250A - Photovoltaic array I-V characteristic testing device and testing method thereof - Google Patents
Photovoltaic array I-V characteristic testing device and testing method thereof Download PDFInfo
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- CN103235250A CN103235250A CN2013101240347A CN201310124034A CN103235250A CN 103235250 A CN103235250 A CN 103235250A CN 2013101240347 A CN2013101240347 A CN 2013101240347A CN 201310124034 A CN201310124034 A CN 201310124034A CN 103235250 A CN103235250 A CN 103235250A
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Abstract
The invention discloses a photovoltaic array I-V characteristic testing device and a testing method thereof. The testing device is used for measuring I-V characteristics of a photovoltaic array to be tested and comprises a control circuit, a driving circuit and a display circuit. The driving circuit is at least one field-effect power tube, and the control circuit is used for changing output current of the photovoltaic array to be tested by controlling driving voltage VGS of the field-effect power tubes so as to simulate variable load of the photovoltaic array to be tested and simultaneously used for sampling voltage values and current values of the photovoltaic array to be tested under different loads. The display circuit is used for displaying voltage values and current values of the photovoltaic array to be tested under different loads and drawing an I-V curve of the photovoltaic array to be tested. The photovoltaic array I-V characteristics testing device has the advantages of small size, light weight, low cost and high reliability by adopting an MOSFET (metal-oxide semiconductor field effect transistor) as a power switch of the control circuit. The invention further discloses the testing method of the testing device.
Description
Technical field
The present invention relates to a kind of proving installation and method of testing thereof, relate in particular to a kind of photovoltaic array I-V characteristic test device and method of testing thereof.
Background technology
Photovoltaic array is as one of core component in the photovoltaic generating system, its actual generated energy often is subjected to self internal factor and external environment factor affecting easily, therefore, for actual photovoltaic system generated energy being estimated, must carry out corresponding test to field erected photovoltaic array.Photovoltaic array I-V tester is a kind of device that photovoltaic array is carried out on-the-spot test, to obtain the photovoltaic array volt-ampere characteristic, provides reference data thereby control and design the evaluation of water product for photovoltaic plant.
At present photovoltaic array I-V tester adopts the method for dynamic capacity charging usually, main circuit structure as shown in Figure 1, its basic functional principle is, at first with switch S
2Open, pass through resistance R
1Discharge loop is with capacitor C
1Store electric charge and put, keep capacitor C
1Be in the no-voltage original state.Stopcock S then
2Open switch S simultaneously
1Test switch S
1Opening moment is the load maximum owing to condensance is almost nil, and photovoltaic array is equivalent to short circuit, and the electric current of gathering is short-circuit current.Wherein, DSP is by sending signal T
1, T
2To switch S
1, switch S
2Control; ADC is to sampling by array current A and array voltage V.Under the photovoltaic array charging, capacitance voltage raises gradually subsequently, and array current slowly reduces, and also just is equivalent to the photovoltaic array load and reduces.When capacitance voltage rose to the array open-circuit voltage, charging current reduced to zero at last, and be equivalent to load this moment is zero, records voltage and is the photovoltaic array open-circuit voltage.By recording the electric current and voltage value of this course of work, just can obtain the I-V curve of photovoltaic array, and show at display screen.
Yet, although this method can obtain photovoltaic array I-V curve, but mainly have the following disadvantages: owing to adopt capacitor as variable load, the size of electric current is very big to discharging and recharging time effects, therefore, different intensity of sunshines, its time that discharges and recharges changes greatly, if it is too fast that electric current and voltage changes, then can influence measuring accuracy.If satisfy the requirement of electric current and voltage rate of change, just must increase electric capacity, just increase volume and weight.In addition, because there is not steady state (SS) in current/voltage, having difficulties aspect the measuring accuracy verification.
Summary of the invention
At present photovoltaic array I-V proving installation above shortcomings, the invention provides a kind of volume is little, in light weight, cost is low and reliability is high photovoltaic array I-V proving installation and method of testing thereof.The present invention only adopts fet power pipe (MOSFET) as the main circuit power switch, saves capacitor group and discharge loop in the general photovoltaic array I-V tester, and according to the MOSFET control characteristic, MOSFET drives signal voltage V by control
GSSize is simulated the load of photovoltaic array to be measured, thereby obtains the I-V curve of photovoltaic array to be measured.
The present invention realizes like this, a kind of photovoltaic array I-V characteristic test device, it is used for measuring the I-V characteristic of photovoltaic array to be measured, this proving installation comprises control circuit and the driving circuit and the display circuit that all electrically connect with this control circuit, this driving circuit also is electrically connected at this photovoltaic array to be measured, wherein: this driving circuit is at least one fet power pipe, and this control circuit is used for the driving voltage V by this at least one fet power pipe of control
GSSize change the output current size of this photovoltaic array to be measured, to simulate the variable load of this photovoltaic array to be measured, also be used for magnitude of voltage and current value at this photovoltaic array to be measured of different loads down-sampling simultaneously, this display circuit is used for showing this photovoltaic array to be measured this magnitude of voltage under different loads and this current value, and depicts the I-V curve of this photovoltaic array to be measured according to this magnitude of voltage under the different loads and this current value.
Further improvement as such scheme, this control circuit has at least one control end corresponding with this at least one fet power pipe, the grid of this at least one fet power pipe is electrically connected at the corresponding controling end of this control circuit, source electrode and drain electrode are connected to input end and the output terminal of this photovoltaic array to be measured, thereby when the quantity of field effect power tube when being a plurality of, all fet power pipes are connected mode in parallel.
Preferably, this control circuit comprises voltage and current sampling modulate circuit and data processing DSP minimum system circuit, this voltage and current sampling modulate circuit is used for gathering magnitude of voltage and the current value of this photovoltaic array to be measured, this at least one control end is arranged on this data processing DSP minimum system circuit, and this data processing DSP minimum system circuit also is electrically connected between this display circuit and this voltage and current sampling modulate circuit.
As the further improvement of such scheme, this display circuit is PC or liquid crystal display.
As the further improvement of such scheme, the driving voltage V of this at least one fet power pipe
GSThe curve that forms is arbitrary curve.
Preferably, the driving voltage V of this at least one fet power pipe
GSThe curve that forms is oblique line.
The present invention also provides a kind of photovoltaic array I-V characteristic test method, and it is applied in the above-mentioned photovoltaic array I-V characteristic test device.This proving installation comprises control circuit and the driving circuit and the display circuit that all electrically connect with this control circuit, this driving circuit also is electrically connected at this photovoltaic array to be measured, wherein: this driving circuit is at least one fet power pipe, and this control circuit is used for the driving voltage V by this at least one fet power pipe of control
GSSize change the output current size of this photovoltaic array to be measured, to simulate the variable load of this photovoltaic array to be measured, also be used for magnitude of voltage and current value at this photovoltaic array to be measured of different loads down-sampling simultaneously, this display circuit is used for showing this photovoltaic array to be measured this magnitude of voltage under different loads and this current value, and depicts the I-V curve of this photovoltaic array to be measured according to this magnitude of voltage under the different loads and this current value.This method of testing may further comprise the steps:
0 ~ t
0Initial period, this control circuit are controlled the driving voltage V of this at least one fet power pipe
GSThe increase of starting from scratch, this stage is because the driving voltage V of this at least one fet power pipe
GSLess than threshold voltage V
Th, this at least one fet power pipe is in off state, this photovoltaic array open circuit to be measured, and the voltage and current of this photovoltaic array to be measured between sampling period, the voltage of this photovoltaic array to be measured is open-circuit voltage U
0, the electric current of this photovoltaic array to be measured then is zero;
t
0~ t
1In the stage, this control circuit is controlled the driving voltage V of this at least one fet power pipe
GSContinuing increases, because driving voltage V
GSGreater than threshold voltage V
Th, this at least one fet power pipe conducting works in the saturation region, and this at least one fet power pipe equivalence this moment is a Voltage-controlled Current Source, and the voltage that the electric current of this photovoltaic array to be measured increases this photovoltaic array to be measured of simultaneous reduces, at t
1Constantly, driving voltage V
GSBe increased to maximal value, this moment, this at least one fet power pipe was equivalent to short circuit, and the electric current of this photovoltaic array to be measured also is increased to maximal value and is short-circuit condition, and the voltage of this photovoltaic array to be measured drops to zero simultaneously;
t
1~ t
2In the stage, this control circuit is controlled the driving voltage V of this at least one fet power pipe
GSRemain unchanged, keep the certain hour short-circuit condition after, at t
2Constantly block the driving signal of this at least one fet power pipe, at t
0~ t
2In time, this control circuit is gathered magnitude of voltage and the current value of this photovoltaic array to be measured in real time, and is shown data and described array of display I-V curve, the I-V curve of this photovoltaic array to be measured of gained by this display circuit.
Further improvement as such scheme, this control circuit has at least one control end corresponding with this at least one fet power pipe, the grid of this at least one fet power pipe is electrically connected at the corresponding controling end of this control circuit, source electrode and drain electrode are connected to input end and the output terminal of this photovoltaic array to be measured, thereby when the quantity of field effect power tube when being a plurality of, all fet power pipes are connected mode in parallel.
Preferably, this control circuit comprises voltage and current sampling modulate circuit and data processing DSP minimum system circuit, this voltage and current sampling modulate circuit is used for gathering magnitude of voltage and the current value of this photovoltaic array to be measured, this at least one control end is arranged on this data processing DSP minimum system circuit, and this data processing DSP minimum system circuit also is electrically connected between this display circuit and this voltage and current sampling modulate circuit.
As the further improvement of such scheme, the driving voltage V of this at least one fet power pipe
GSThe curve that forms is arbitrary curve.
Compared with the prior art, photovoltaic array I-V proving installation of the present invention and method of testing thereof, its circuit structure is simple, only by a MOSFET(or a plurality of parallel connection) form, utilize the MOSFET control characteristic to simulate the load of photovoltaic array to be measured, saved capacitor and auxiliary discharge loop in the general photovoltaic array I-V tester, thereby no matter system and device is from volume and cost, still from the reliability aspect, all have very big advantage, in the dynamic capacity method, the duration of charging is fixed in case electric capacity is determined at present, measuring process is uncontrollable, and MOSFET driving voltage V among the present invention
GSCurve is not one to be decided to be oblique line, can set arbitrary curve by the data processing DSP minimum system circuit of this control circuit, thereby obtain different photovoltaic array load curves, and this also makes measuring accuracy improve greatly and controls more flexible.
Description of drawings
Fig. 1 is the main circuit structure figure of present photovoltaic array I-V tester.
Fig. 2 is the electrical block diagram of the photovoltaic array I-V characteristic test device that provides of preferred embodiments of the present invention.
Fig. 3 is the driving signal V of the fet power pipe of proving installation among Fig. 1
GSThe electric current and voltage synoptic diagram of control and photovoltaic array to be measured.
Fig. 4 is the photovoltaic array I-V test curve synoptic diagram that proving installation obtains in the application drawing 1.
Embodiment
In order to make purpose of the present invention, technical scheme and advantage clearer, below in conjunction with drawings and Examples, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explaining the present invention, and be not used in restriction the present invention.
See also Fig. 2, it is the electrical block diagram of the photovoltaic array I-V characteristic test device that provides of preferred embodiments of the present invention.Photovoltaic array I-V characteristic test device is used for measuring the I-V characteristic of photovoltaic array 1 to be measured, this proving installation comprises control circuit 2 and the driving circuit 3 and display circuit 4 that all electrically connect with this control circuit 2, and this driving circuit 3 also is electrically connected at this photovoltaic array 1 to be measured.
This driving circuit 3 is at least one fet power pipe (MOSFET) S
11, in the present embodiment, fet power pipe S
11Quantity be that example is illustrated with one.
This control circuit 2 is by controlling filed effect power tube S
11Driving voltage V
GSSize change the output current size of this photovoltaic array 1 to be measured, to simulate the variable load of this photovoltaic array 1 to be measured, also be used for magnitude of voltage and current value at this photovoltaic array 1 to be measured of different loads down-sampling simultaneously.This control circuit 2 comprises voltage and current sampling modulate circuit (ADC) 5 and data processing DSP minimum system circuit (DSP) 6.
Data processing DSP minimum system circuit 6 is provided with and fet power pipe S
11The control end T that quantity is identical
11, fet power pipe S
11Grid G be electrically connected at corresponding control end T
11, source S and drain D are connected to input end and the output terminal of this photovoltaic array 1 to be measured, thereby as field effect power tube S
11Quantity when being a plurality of, all fet power pipe S
11Be connected mode in parallel.
This data processing DSP minimum system circuit 6 also is electrically connected between this display circuit 4 and this voltage and current sampling modulate circuit 5.This voltage and current sampling modulate circuit 5 is used for gathering magnitude of voltage and the current value of this photovoltaic array 1 to be measured.
This display circuit 4 is used for showing this photovoltaic array 1 to be measured this magnitude of voltage under different loads and this current value, and depicts the I-V curve of this photovoltaic array 1 to be measured according to this magnitude of voltage under the different loads and this current value.This display circuit 4 can be display screen, display or PC, is display screen in the present embodiment.
In photovoltaic generating system, for accurately estimating the photovoltaic array generated energy, must on-the-spot photovoltaic array be tested in the volt-ampere characteristic under the different loads.Thereby, as photovoltaic array I-V curve testing device (being photovoltaic array I-V characteristic test device), need to satisfy 2 points: the one, load simulation; The 2nd, photovoltaic array voltage and current signal collection under the different loads.
The driving circuit 3 of the photovoltaic array I-V curve testing device of present embodiment only is made up of a MOSFET, the basic functional principle of this proving installation is: system is by driving signal voltage control to power tube MOSFET, and then control MOSFET drain-source current is the photovoltaic array output current, utilize the MOSFET drain-source current to change the variable load that comes simulated light photovoltaic array 1, gather array voltage and current value under this course of work simultaneously fast, to obtain photovoltaic array I-V curve.
Please in conjunction with Fig. 3, the concrete course of work of the photovoltaic array I-V curve testing device of present embodiment is: shown in (a) among Fig. 3, and 0 ~ t
0Initial period utilizes the digital-to-analogue DA converter of digital signal processor DSP (also can adopt other main control chips such as single-chip microcomputer etc.), and namely data processing DSP minimum system circuit 6, make the driving voltage V of MOSFET
GSThe increase of starting from scratch, this stage is because MOSFET driving voltage V
GSLess than threshold voltage V
Th, MOSFET is in off state, photovoltaic array to be measured 1 open circuit, during the voltage of photovoltaic array 1 to be measured be open-circuit voltage U
o(shown in Fig. 3 (c)), the electric current of photovoltaic array 1 to be measured then are zero.Utilize voltage-current sensor to detect photovoltaic array electric current and voltage value and preservation, this moment, measured voltage was the open-circuit voltage U of photovoltaic array 1 to be measured
0
t
0~ t
1In the stage, continue to increase driving voltage V by DSP digital-to-analogue DA converter
GS, because driving voltage V
GSGreater than threshold voltage V
Th, the MOSFET conducting works in the saturation region, and this moment, the MOSFET equivalence was a Voltage-controlled Current Source, and the voltage that the electric current of this photovoltaic array 1 to be measured increases this photovoltaic array 1 to be measured of simultaneous reduces, as Fig. 3 (b) with (c).Here MOSFET driving voltage V
GSCurve is not one to be decided to be oblique line, can set arbitrary curve by DSP digital-to-analogue DA controller, thereby obtains the load curve of different photovoltaic arrays to be measured 1, and this makes that also control is more flexible.As can be seen from Figure 3, at t
1Constantly, driving voltage V
GSBe increased to maximal value, this moment, MOSFET was equivalent to short circuit, and the electric current of photovoltaic array 1 to be measured also is increased to maximal value and is short-circuit condition, and the voltage of photovoltaic array 1 to be measured drops to zero simultaneously.
t
1~ t
2In time, keep driving voltage V
GSConstant, keep the certain hour short-circuit condition after, at t
2Block constantly and drive signal V
GSAt t
0~ t
2In time, the AD sample circuit is magnitude of voltage and the current value that voltage and current sampling modulate circuit 5 is gathered photovoltaic array 1 to be measured in real time, and send into the DSP main control chip, after handling, DSP is sent to display screen by communication interface, show data and describe array of display I-V curve that by display screen gained photovoltaic array I-V curve synoptic diagram as shown in Figure 4.This shows, drive the method for signal voltage control by MOSFET, can simulate the I-V curve that obtains photovoltaic array under the different loads, compare with general photovoltaic array I-V tester, save capacitor and discharge circuit in the proving installation of the present invention, had advantages such as little, the in light weight and cost of volume is low.
Always described, photovoltaic array I-V proving installation of the present invention and method of testing thereof, its circuit structure is simple, only by a MOSFET(or a plurality of parallel connection) form, utilize the MOSFET control characteristic to simulate the load of photovoltaic array to be measured, saved capacitor and auxiliary discharge loop in the general photovoltaic array I-V tester, thereby no matter system and device is from volume and cost, still from the reliability aspect, all have very big advantage, and measuring accuracy is greatly enhanced; MOSFET driving voltage V
GSCurve is not one to be decided to be oblique line, can set arbitrary curve by the data processing DSP minimum system circuit of this control circuit, thereby obtain different photovoltaic array load curves, and this makes that also control is more flexible.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. photovoltaic array I-V characteristic test device, it is used for measuring the I-V characteristic of photovoltaic array to be measured, this proving installation comprises control circuit and the driving circuit and the display circuit that all electrically connect with this control circuit, this driving circuit also is electrically connected at this photovoltaic array to be measured, it is characterized in that: this driving circuit is at least one fet power pipe, and this control circuit is used for the driving voltage V by this at least one fet power pipe of control
GSSize change the output current size of this photovoltaic array to be measured, to simulate the variable load of this photovoltaic array to be measured, also be used for magnitude of voltage and current value at this photovoltaic array to be measured of different loads down-sampling simultaneously, this display circuit is used for showing this photovoltaic array to be measured this magnitude of voltage under different loads and this current value, and depicts the I-V curve of this photovoltaic array to be measured according to this magnitude of voltage under the different loads and this current value.
2. photovoltaic array I-V characteristic test device as claimed in claim 1, it is characterized in that: this control circuit has at least one control end corresponding with this at least one fet power pipe, the grid of this at least one fet power pipe is electrically connected at the corresponding controling end of this control circuit, source electrode and drain electrode are connected to input end and the output terminal of this photovoltaic array to be measured, thereby when the quantity of field effect power tube when being a plurality of, all fet power pipes are connected mode in parallel.
3. photovoltaic array I-V characteristic test device as claimed in claim 2, it is characterized in that: this control circuit comprises voltage and current sampling modulate circuit and data processing DSP minimum system circuit, this voltage and current sampling modulate circuit is used for gathering magnitude of voltage and the current value of this photovoltaic array to be measured, this at least one control end is arranged on this data processing DSP minimum system circuit, and this data processing DSP minimum system circuit also is electrically connected between this display circuit and this voltage and current sampling modulate circuit.
4. photovoltaic array I-V characteristic test device as claimed in claim 1, it is characterized in that: this display circuit is PC or liquid crystal display.
5. photovoltaic array I-V characteristic test device as claimed in claim 1 is characterized in that: the driving voltage V of this at least one fet power pipe
GSThe curve that forms is arbitrary curve.
6. photovoltaic array I-V characteristic test device as claimed in claim 5 is characterized in that: the driving voltage V of this at least one fet power pipe
GSThe curve that forms is oblique line.
7. photovoltaic array I-V characteristic test method, it is applied in the photovoltaic array I-V characteristic test device as claimed in claim 1, and it is characterized in that: this method of testing may further comprise the steps:
0 ~ t
0Initial period, this control circuit are controlled the driving voltage V of this at least one fet power pipe
GSThe increase of starting from scratch, this stage is because the driving voltage V of this at least one fet power pipe
GSLess than threshold voltage V
Th, this at least one fet power pipe is in off state, this photovoltaic array open circuit to be measured, and the voltage and current of this photovoltaic array to be measured between sampling period, the voltage of this photovoltaic array to be measured is open-circuit voltage U
0, the electric current of this photovoltaic array to be measured then is zero;
t
0~ t
1In the stage, this control circuit is controlled the driving voltage V of this at least one fet power pipe
GSContinuing increases, because driving voltage V
GSGreater than threshold voltage V
Th, this at least one fet power pipe conducting works in the saturation region, and this at least one fet power pipe equivalence this moment is a Voltage-controlled Current Source, and the voltage that the electric current of this photovoltaic array to be measured increases this photovoltaic array to be measured of simultaneous reduces, at t
1Constantly, driving voltage V
GSBe increased to maximal value, this moment, this at least one fet power pipe was equivalent to short circuit, and the electric current of this photovoltaic array to be measured also is increased to maximal value and is short-circuit condition, and the voltage of this photovoltaic array to be measured drops to zero simultaneously;
t
1~ t
2In the stage, this control circuit is controlled the driving voltage V of this at least one fet power pipe
GSRemain unchanged, keep the certain hour short-circuit condition after, at t
2Constantly block the driving signal of this at least one fet power pipe, at t
0~ t
2In time, this control circuit is gathered magnitude of voltage and the current value of this photovoltaic array to be measured in real time, and is shown data and described array of display I-V curve, the I-V curve of this photovoltaic array to be measured of gained by this display circuit.
8. photovoltaic array I-V characteristic test method as claimed in claim 7, it is characterized in that: this control circuit has at least one control end corresponding with this at least one fet power pipe, the grid of this at least one fet power pipe is electrically connected at the corresponding controling end of this control circuit, source electrode and drain electrode are connected to input end and the output terminal of this photovoltaic array to be measured, thereby when the quantity of field effect power tube when being a plurality of, all fet power pipes are connected mode in parallel.
9. photovoltaic array I-V characteristic test method as claimed in claim 8, it is characterized in that: this control circuit comprises voltage and current sampling modulate circuit and data processing DSP minimum system circuit, this voltage and current sampling modulate circuit is used for gathering magnitude of voltage and the current value of this photovoltaic array to be measured, this at least one control end is arranged on this data processing DSP minimum system circuit, and this data processing DSP minimum system circuit also is electrically connected between this display circuit and this voltage and current sampling modulate circuit.
10. photovoltaic array I-V characteristic test method as claimed in claim 7 is characterized in that: the driving voltage V of this at least one fet power pipe
GSThe curve that forms is arbitrary curve.
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| CN104009705A (en) * | 2014-06-09 | 2014-08-27 | 苏州青云能源科技有限公司 | Photovoltaic power generation system characteristic data collection device and method |
| CN105391401A (en) * | 2015-12-16 | 2016-03-09 | 常州天合光能有限公司 | Photovoltaic module or array I-V characteristic measurement apparatus and method |
| CN108306618A (en) * | 2018-02-27 | 2018-07-20 | 顺德中山大学太阳能研究院 | A kind of photovoltaic IV testers |
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| CN109302145A (en) * | 2018-11-16 | 2019-02-01 | 合肥工业大学 | A kind of photovoltaic array I-V characteristic detection device and detection method |
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| ES2848353A1 (en) * | 2020-02-06 | 2021-08-06 | Univ Valladolid | SYSTEM AND PROCEDURE FOR MEASURING VOLTAGE AND CURRENT OF PHOTOVOLTAIC SOLAR MODULES (Machine-translation by Google Translate, not legally binding) |
| ES2848440A1 (en) * | 2020-02-06 | 2021-08-09 | Univ Valladolid | SOLAR MODULES VOLTAGE AND CURRENT MEASUREMENT SYSTEM AND PROCEDURE FORMING A SERIAL ASSOCIATION (Machine-translation by Google Translate, not legally binding) |
| CN113253082A (en) * | 2020-02-13 | 2021-08-13 | 普适福了有限公司 | Measuring device and method for a display panel comprising optical elements |
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| CN108566161A (en) * | 2018-03-07 | 2018-09-21 | 深圳市全球通检测服务有限公司 | New energy C-V characteristic detecting system |
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