CN110400835A - A kind of structure and preparation method thereof improving gallium nitride device electron mobility - Google Patents
A kind of structure and preparation method thereof improving gallium nitride device electron mobility Download PDFInfo
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- CN110400835A CN110400835A CN201910774581.7A CN201910774581A CN110400835A CN 110400835 A CN110400835 A CN 110400835A CN 201910774581 A CN201910774581 A CN 201910774581A CN 110400835 A CN110400835 A CN 110400835A
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 66
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 36
- 238000002360 preparation method Methods 0.000 title claims abstract description 7
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 46
- 230000004888 barrier function Effects 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 125000006850 spacer group Chemical group 0.000 claims abstract description 7
- 238000000407 epitaxy Methods 0.000 claims description 4
- 230000000694 effects Effects 0.000 abstract description 4
- 230000003139 buffering effect Effects 0.000 abstract 1
- 229910017083 AlN Inorganic materials 0.000 description 22
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- AJGDITRVXRPLBY-UHFFFAOYSA-N aluminum indium Chemical compound [Al].[In] AJGDITRVXRPLBY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910000238 buergerite Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
Abstract
The invention discloses a kind of structures and preparation method thereof for improving gallium nitride device electron mobility, are to solve the not high problem of existing gallium nitride device epitaxial layer electron mobility.This product includes substrate, c-GaN layers, i-GaN layers and barrier layers of AlGaN, the substrate is located at the bottom, the top of substrate is provided with AIN buffer layer, the top of AIN buffer layer is provided with AlGaN buffer layer, AlGaN buffer layer is located at c-GaN layers of lower section, i-GaN layers are located at c-GaN layers of top, barrier layers of AlGaN are located at i-GaN layers of top, spacer layers of AlN are provided between i-GaN layers and AlGaN barrier layers, the top that barrier layers of AlGaN is provided with P-AlInGaN layers.This product between AlGaN and GaN by being inserted into spacer layers of AlN using substrate, because it is with biggish forbidden bandwidth, to obtain more preferably quantum well effect, electron mobility is effectively improved, more effective buffering can be provided, the demand of high-quality GaN channel layer is reached.
Description
Technical field
The present invention relates to a kind of gallium nitride device field, specifically a kind of knot for improving gallium nitride device electron mobility
Structure.
Background technique
The natural structure of gallium nitride in gallium nitride device internal structure is " buergerite " hexagonal structure, this crystal structure
So that gallium nitride material has piezoelectric property, compared with its semiconductor material, gallium nitride transistor has very high conductive energy
Power.The piezoelectric effect of gallium nitride is mainly to be formed by the displacement of charged ion in lattice, if lattice is strained, deformation will
Cause the minute movement of atom in lattice, this will generate electric field, and strain is stronger, and electric field is bigger.By gallium nitride it
Upper growing aluminum nitride gallium thin layer can generate strain in interface, and this strain will induce two-dimensional electron gas, when application voltage
When, this two-dimensional electron gas can be effectively conducted electronics, and this to have high concentration, the electronics of high mobility is the high electricity of gallium nitride
The basis of transport factor transistor.
But with the development of technology, GaN channel quality requires increasingly to increase, and the solution of the prior art has been difficult to full
Sufficient demand, people are also in the research for carrying out related fields.
Summary of the invention
The embodiment of the present invention is designed to provide a kind of structure for improving gallium nitride device electron mobility, on solving
State the problem of proposing in background technique.
To achieve the above object, the embodiment of the present invention provides the following technical solutions:
A kind of structure improving gallium nitride device electron mobility, including substrate, c-GaN(carbon doped gallium nitride) layer, i-GaN
(intrinsic gallium nitride) layer and AlGaN(aluminium gallium nitride alloy) barrier layers, the substrate is located at the bottom, and the top of substrate is provided with
AIN(aluminium nitride) buffer layer, the top of AIN buffer layer is provided with AlGaN buffer layer, and AlGaN buffer layer is located under c-GaN layers
Side, i-GaN layer are located at c-GaN layers of top, barrier layers of AlGaN positioned at i-GaN layers of top, i-GaN layers and AlGaN
Barrier(aluminium gallium nitride alloy potential barrier) AlN spacer(aluminum nitride barrier is provided between layer) layer, barrier layers of AlGaN upper
Portion is provided with P-AlInGaN(P type aluminum indium gallium nitride) layer.
As further embodiment of the embodiment of the present invention: substrate uses Si(silicon) layer or SiC(silicon carbide) layer, technology at
Ripe, using effect is good.
As further embodiment of the embodiment of the present invention: the surface of substrate is provided at least one concave or raised item
Shape figure.
As further embodiment of the embodiment of the present invention: P-AlInGaN layers with a thickness of 1-100nm.
As further embodiment of the embodiment of the present invention: spacer layers of AlN with a thickness of 1-5nm.
As further embodiment of the embodiment of the present invention: the mass fraction of Al is 15-30% in barrier layers of AlGaN.
As further embodiment of the embodiment of the present invention: barrier layers of AlGaN with a thickness of 15-30nm.
The preparation method of the structure for improving gallium nitride device electron mobility, the specific steps are as follows:
Step 1, AlN buffer layer of growing up on substrate；
Step 2, after the growth of AlN buffer layer, AlGaN buffer layer of growing up above AlN buffer layer；
Step 3 is grown up c-GaN layers above AlGaN buffer layer；
Step 4 is grown up i-GaN layers above c-GaN layers；
Step 5 is grown up AlN spacer layers above i-GaN layers；
Step 6 is grown up AlGaN barrier layers above spacer layers of AlN；
Step 7 is grown up P-AlInGaN layers above barrier layers of AlGaN, and the mass fraction of Al, In and Ga are in 0-100%
Between, and the sum of mass fraction of Al, In and Ga is 100%, that is, forms epitaxy of gallium nitride structure sheaf.
Compared with prior art, the beneficial effect of the embodiment of the present invention is:
This product design is reasonable, by being inserted into spacer layers of an appropriate AlN between AlGaN and GaN using substrate, because it has
Biggish forbidden bandwidth effectively improves electron mobility to obtain more preferably quantum well effect, can provide more effectively slow
Punching, to reach the demand of high-quality GaN channel layer.
Detailed description of the invention
Fig. 1 is the structural schematic diagram for improving the structure of gallium nitride device electron mobility.
Wherein: 1- substrate, 2-AIN buffer layer, 3-AlGaN buffer layer, 4-c-GaN layers, 5-i-GaN layers, 6-AlN
Spacer layers, barrier layers of 7-AlGaN, 8-P-AlInGaN layers.
Specific embodiment
The technical solution of the patent is explained in further detail With reference to embodiment.
Embodiment 1
A kind of preparation method for the structure improving gallium nitride device electron mobility, the specific steps are as follows:
Step 1, AlN buffer layer 2 of first growing up on plane Si substrate 1；
Step 2, after AlN buffer layer 2 is grown up, AlGaN buffer layer 3 of growing up above AlN buffer layer 2；
Step 3, c-GaN layer 4 of growing up above AlGaN buffer layer 3；
Step 4, i-GaN layer 5 of growing up above c-GaN layer 4；
Step 5, above i-GaN layer 5 grow up AlN spacer layer 6, AlN spacer layer 6 with a thickness of 3nm；
Step 6, AlGaN barrier layer 7 of growing up above AlN spacer layer 6, the quality of Al in AlGaN barrier layer 7
Score is 19%, AlGaN barrier layer 7 with a thickness of 24nm；
Step 7, above AlGaN barrier layer 7 grow up P-AlInGaN layer 8, P-AlInGaN layer 8 with a thickness of 44nm, i.e.,
Form epitaxy of gallium nitride structure sheaf.
Embodiment 2
A kind of preparation method for the structure improving gallium nitride device electron mobility, the specific steps are as follows:
Step 1, AlN buffer layer 2 of growing up in patterned SiC substrate 1 graphically refer to that 1 surface of substrate has at least one or more
Concave or raised flagpole pattern；
Step 2, after AlN buffer layer 2 is grown up, AlGaN buffer layer 3 of growing up above AlN buffer layer 2；
Step 3, c-GaN layer 4 of growing up above AlGaN buffer layer 3；
Step 4, i-GaN layer 5 of growing up above c-GaN layer 4；
Step 5, above i-GaN layer 5 grow up AlN spacer layer 6, AlN spacer layer 6 with a thickness of 4.2nm；
Step 6, AlGaN barrier layer 7 of growing up above AlN spacer layer 6, the quality of Al in AlGaN barrier layer 7
Score is 26%, AlGaN barrier layer 7 with a thickness of 20nm；
Step 7, above AlGaN barrier layer 7 grow up P-AlInGaN layer 8, P-AlInGaN layer 8 with a thickness of 86nm, i.e.,
Form epitaxy of gallium nitride structure sheaf.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention
Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.No
It should treat any reference in the claims as limiting the claims involved.
In addition, it should be understood that although this specification is described in terms of embodiments, but not each embodiment is only wrapped
Containing an independent technical solution, this description of the specification is merely for the sake of clarity, and those skilled in the art should
It considers the specification as a whole, the technical solutions in the various embodiments may also be suitably combined, forms those skilled in the art
The other embodiments being understood that.
Claims (8)
1. it is a kind of improve gallium nitride device electron mobility structure, including substrate (1), c-GaN layers (4), i-GaN layers (5) and
Barrier layers of AlGaN (7), the substrate (1) is located at the bottom, and the top of substrate (1) is provided with AIN buffer layer (2), AIN
The top of buffer layer (2) is provided with AlGaN buffer layer (3), and AlGaN buffer layer (3) is located at the lower section of c-GaN layers (4), i-GaN
Layer (5) is located at the top of c-GaN layers (4), the top for being located at i-GaN layers (5) for barrier layers of AlGaN (7), which is characterized in that
Spacer layers of AlN (6) are provided between i-GaN layers (5) and barrier layers of AlGaN (7), barrier layers of AlGaN (7)
Top is provided with P-AlInGaN layers (8).
2. the structure according to claim 1 for improving gallium nitride device electron mobility, which is characterized in that the substrate
(1) Si layers or SiC layer are used.
3. the structure according to claim 1 for improving gallium nitride device electron mobility, which is characterized in that the substrate
(1) surface is provided at least one concave or raised flagpole pattern.
4. the structure according to claim 1 for improving gallium nitride device electron mobility, which is characterized in that the P-
AlInGaN layers (8) with a thickness of 1-100nm.
5. the structure according to claim 1 for improving gallium nitride device electron mobility, which is characterized in that the AlN
Spacer layers (6) with a thickness of 1-5nm.
6. the structure according to claim 1 for improving gallium nitride device electron mobility, which is characterized in that the AlGaN
Barrier layers (7) with a thickness of 15-30nm.
7. the structure according to claim 1 for improving gallium nitride device electron mobility, which is characterized in that the AlGaN
The mass fraction of Al is 15-30% in barrier layers (7).
8. a kind of preparation method of the structure as claimed in claim 1 for improving gallium nitride device electron mobility,
It is characterized in that, the specific steps are as follows:
Step 1 grows up AlN buffer layer (2) on substrate (1)；
Step 2 grows up AlGaN buffer layer (3) above AlN buffer layer (2) after AlN buffer layer (2) grow up；
Step 3, c-GaN layers (4) of growing up above AlGaN buffer layer (3)；
Step 4, in c-GaN layers (4) tops i-GaN layers (5) of growth；
Step 5, in i-GaN layers (5) tops AlN spacer layers (6) of growth；
Step 6, in spacer layers of AlN (6) tops AlGaN barrier layers (7) of growth；
Step 7 forms epitaxy of gallium nitride structure sheaf in barrier layers of AlGaN (7) tops P-AlInGaN layers (8) of growth.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114411248A (en) * | 2021-12-08 | 2022-04-29 | 中晟光电设备（上海）股份有限公司 | Preparation method of epitaxial structure, device and equipment |
| TWI773090B (en) * | 2021-01-18 | 2022-08-01 | 合晶科技股份有限公司 | Wafer having improved breakdown voltage and method for manufacturing the same |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1783512A (en) * | 2004-12-02 | 2006-06-07 | 中国科学院半导体研究所 | Structure of improving gallium nitride base high electronic mobility transistor property and producing method |
| JP2010182872A (en) * | 2009-02-05 | 2010-08-19 | Hitachi Cable Ltd | Semiconductor epitaxial wafer and method of manufacturing the same, and field effect transistor |
| JP2011204980A (en) * | 2010-03-26 | 2011-10-13 | Oki Electric Industry Co Ltd | Gallium nitride-based epitaxial growth substrate and method of manufacturing the same, and field effect transistor manufactured using the substrate |
| US20130089973A1 (en) * | 2011-10-07 | 2013-04-11 | Sharp Kabushiki Kaisha | Method of manufacturing nitride semiconductor device |
| CN106033724A (en) * | 2015-03-09 | 2016-10-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | III-family nitride reinforced HEMT and preparation method thereof |
| CN108573853A (en) * | 2017-03-09 | 2018-09-25 | 合肥彩虹蓝光科技有限公司 | A kind of GaN base HEMT device epitaxial structure and its growing method |
| CN210224041U (en) * | 2019-08-21 | 2020-03-31 | 聚力成半导体(重庆)有限公司 | Structure for improving electron mobility of gallium nitride device |
-
2019
- 2019-08-21 CN CN201910774581.7A patent/CN110400835A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1783512A (en) * | 2004-12-02 | 2006-06-07 | 中国科学院半导体研究所 | Structure of improving gallium nitride base high electronic mobility transistor property and producing method |
| JP2010182872A (en) * | 2009-02-05 | 2010-08-19 | Hitachi Cable Ltd | Semiconductor epitaxial wafer and method of manufacturing the same, and field effect transistor |
| JP2011204980A (en) * | 2010-03-26 | 2011-10-13 | Oki Electric Industry Co Ltd | Gallium nitride-based epitaxial growth substrate and method of manufacturing the same, and field effect transistor manufactured using the substrate |
| US20130089973A1 (en) * | 2011-10-07 | 2013-04-11 | Sharp Kabushiki Kaisha | Method of manufacturing nitride semiconductor device |
| CN106033724A (en) * | 2015-03-09 | 2016-10-19 | 中国科学院苏州纳米技术与纳米仿生研究所 | III-family nitride reinforced HEMT and preparation method thereof |
| CN108573853A (en) * | 2017-03-09 | 2018-09-25 | 合肥彩虹蓝光科技有限公司 | A kind of GaN base HEMT device epitaxial structure and its growing method |
| CN210224041U (en) * | 2019-08-21 | 2020-03-31 | 聚力成半导体(重庆)有限公司 | Structure for improving electron mobility of gallium nitride device |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI773090B (en) * | 2021-01-18 | 2022-08-01 | 合晶科技股份有限公司 | Wafer having improved breakdown voltage and method for manufacturing the same |
| CN114411248A (en) * | 2021-12-08 | 2022-04-29 | 中晟光电设备（上海）股份有限公司 | Preparation method of epitaxial structure, device and equipment |
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