CN110838518A - Epitaxial structure of HEMT device and preparation method and application thereof - Google Patents
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
Abstract
The invention provides an epitaxial structure of a HEMT device, which comprises: the substrate layer is sequentially provided with an AlN layer, a polarization buffer layer, a GaN layer and an AlGaN layer in a laminating manner along the substrate upwards; the polarization buffer layer is made of AlGaN material with Al content gradually decreasing from the AlN layer to the GaN layer. Compared with the prior art, the epitaxial structure of the HEMT device provided by the invention has the advantages that the AlGaN buffer layer with the Al component gradually changed from high to low is epitaxially grown on the AlN template until the AlGaN buffer layer is transited to a GaN material. The free hole carrier is induced to generate by utilizing the polarization effect, the background electron carrier is compounded, the preparation of the high-resistance buffer layer is realized, and the HEMT device with low leakage current can be finally realized based on the epitaxial structure. The leakage current is reduced, so that the working performance of the HEMT device can be improved; and the leakage current of the other part is reduced, so that the breakdown voltage of the device is further increased, and the energy consumption is reduced.
Description
Technical Field
The invention belongs to the field of semiconductor devices, and particularly relates to an epitaxial structure of a HEMT device, and a preparation method and application thereof.
Background
As a third generation semiconductor material, the GaN semiconductor material has wide forbidden band, high breakdown field strength, spontaneous polarization and piezoelectric polarization characteristics. Two-dimensional electron gas channels can be formed at the interface of GaN and AlGaN, and the electron mobility of the channels can reach 2000cm theoretically2V · S, is advantageous for the production of high voltage, high frequency power electronic devices. Meanwhile, the GaN-based material has stable physical and chemical properties, is corrosion-resistant and radiation-resistant, and the prepared device has high stability and is suitable for working in a complex environment, so that the GaN-based device has wide application prospect. Among them, the preparation of High Electron Mobility Transistors (HEMTs) is one of the important applications of GaN-based materials. However, in the epitaxial growth process of the traditional preparation method, the donor defects such as N vacancy and the like can be inevitably generated, so that the unintentionally doped GaN material is in an N type, and the background electron carrier concentration can be as high as 1017cm-3Magnitude. This results in a large leakage current of HEMT devices made of GaN-based materials, thereby increasing the energy consumption of the working devices, reducing the breakdown voltage and on/off current ratio of the devices, and adversely affecting the application of the devices.
Therefore, it is necessary to design a new epitaxial structure of a GaN-based HEMT device to solve the above problems.
The preparation method of the epitaxial structure of the GaN-based HEMT device is correspondingly designed and is the basis for realization.
Disclosure of Invention
The invention aims to provide an HEMT device epitaxial structure with a polarization buffer layer and a preparation method thereof so as to solve the problem of large leakage current of the epitaxial structure of the conventional GaN-based HEMT device.
In order to solve the above technical problems, an aspect of the present invention provides an epitaxial structure of a HEMT device having a polarization buffer layer, including: the device comprises a substrate layer, and an AlN layer, a polarization buffer layer, a GaN layer and an AlGaN layer which are sequentially arranged along the direction far away from the substrate layer; the polarization buffer layer is made of AlGaN material with the Al content gradually reduced along the direction from the AlN layer to the GaN layer.
Preferably, the polarization buffer layer has an Al content gradient with thickness of 0.05% Al/nm to 5% Al/nm.
Preferably, the thickness of the GaN layer is 50nm or less.
Preferably, the content of Al in the AlGaN layer is 10% to 40%.
Preferably, the substrate material is sapphire.
In another aspect, the present invention provides a method for manufacturing an HEMT device, comprising the following steps:
epitaxially growing an AlN layer on the substrate;
introducing a gaseous Ga source on the basis of the AlN layer, wherein the flow rate is gradually increased from 0; simultaneously introducing a gaseous Al source, and gradually reducing the flow to 0; while NH is uniformly introduced3As N source, epitaxially growing a polarization buffer layer;
epitaxially growing a GaN layer on the polarization buffer layer;
and epitaxially growing an AlGaN layer on the GaN layer.
Preferably, the AlN layer has a growth pressure <50 mBar; the growth temperature is more than 1000 ℃.
Preferably, the growth method of each layer includes at least one of MOCVD method, MBE method, HVPE method.
Preferably, the gaseous Ga source is TMGa; the gaseous Al source is TMAl.
The invention also provides application of the preparation method of the epitaxial structure of the HEMT device in preparation of a normally-open HEMT device and an enhanced HEMT device.
Compared with the prior art, the epitaxial structure of the HEMT device provided by the invention has the advantages that the AlGaN buffer layer with the Al component gradually changed from high to low is epitaxially grown on the AlN template until the AlGaN buffer layer is transited to a GaN material. And the free hole carrier is induced to generate by utilizing the polarization effect, the background electron carrier is compounded, and the preparation of the high-resistance buffer layer is realized, so that the preparation of the HEMT device with low leakage current is finally realized. On one hand, the working performance of the HEMT device with the epitaxial structure is improved due to the reduction of leakage current; and on the other hand, the leakage current of the device is reduced, so that the breakdown voltage of the device using the epitaxial structure provided by the invention is increased, and the energy consumption is reduced.
The preparation method of each layer of the epitaxial structure of the HEMT device is the prior art, so that the preparation method has no technical threshold, but the performance of the device obtained by utilizing the epitaxial structure provided by the invention is greatly improved, so that the preparation method is worthy of large-scale popularization and application.
Drawings
Fig. 1 is a schematic view of an epitaxial structure of a HEMT device according to an embodiment of the present invention;
fig. 2 is a schematic view of an epitaxial structure of a conventional HEMT device;
fig. 3 is a schematic diagram of a polarization buffer layer of a HEMT device according to an embodiment of the present invention;
fig. 4 is a simulated energy band diagram of CrossLight simulation software of the epitaxial structure of the HEMT device according to the embodiment of the present invention.
Detailed Description
In order to make the technical problems, technical solutions and advantageous effects to be solved by the present invention more clearly apparent, the present invention is further described in detail below with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
The embodiment of the invention provides an HEMT device epitaxial structure with a polarization buffer layer and a preparation method thereof so as to solve the problem of large leakage current of the epitaxial structure of the conventional GaN-based HEMT device.
In order to solve the above technical problem, an aspect of the present invention provides an HEMT device epitaxial structure having a polarization buffer layer, as shown in fig. 1, including: the solar cell comprises a substrate layer 1, an AlN layer 2, a polarization buffer layer 3, a GaN layer 4 and an AlGaN layer 5 which are sequentially arranged along the direction far away from the substrate layer; the polarization buffer layer is made of an AlGaN material in which the Al content gradually decreases in the direction from the AlN layer 2 to the GaN layer 4. The structures are only basic structures, and in specific application, the device structure can be further designed by etching and other processes on the basis of the structures, and necessary functional units such as a source electrode, a drain electrode, a grid electrode and the like are added to realize a normally-on or enhancement type HEMT device. The conventional HEMT device epitaxial structure is shown in fig. 2 and comprises a substrate layer 1', a GaN layer 2' and an AlGaN layer 3 '. The HEMT device epitaxial structure provided by the invention has the Al component gradient high-resistance buffer layer, and the high-resistance buffer layer is realized by introducing fixed negative polarization charges to induce free holes and background carriers in a composite material in a gradient manner by utilizing the characteristics that the higher the Al component is, the stronger the polarization strength of an AlGaN-based material is. On the basis, the aim of reducing the leakage current of the HEMT device is fulfilled.
In a preferred embodiment, the polarization buffer layer has an Al content gradient with thickness of 0.05% Al/nm to 5% Al/nm. If the gradient of the Al component along with the change of the thickness is too large, the material is in a p type, and the formation of two-dimensional electron gas of the AlGaN/GaN heterojunction channel is influenced; if the variation gradient is too small, it is not sufficient to compensate for the background electron concentration introduced by the defects. Therefore, the gradient interval is selected to ensure that the electron concentration is moderate.
In a preferred embodiment, the thickness of the GaN layer is no greater than 50 nm. If the GaN material is too thick, the effect of the polarization buffer layer is masked and it is difficult to achieve the desired effect.
In a preferred embodiment, the content of Al in the AlGaN layer is 10% to 40%. If the Al component is too low, two-dimensional electron gas is difficult to form at the GaN interface effectively, and if the Al component is too high, surface cracks are easy to generate, and the device is difficult to prepare.
In a preferred embodiment, the substrate material is sapphire. The production technology of the sapphire substrate is mature, and the quality of devices is good; secondly, the sapphire has good stability and can be applied to the high-temperature growth process; finally, sapphire is mechanically strong and easy to handle and clean.
The principle that the epitaxial structure of the HEMT device utilizes the gradient AlGaN material to induce hole free carriers is as follows:
first, when an AlGaN based material with a gradually changing Al composition is epitaxially grown from the AlN layer toward the GaN layer (fig. 3(a)), the distribution of polarized dipoles along the AlN layer toward the GaN layer is shown in fig. 3(b) because the electric dipole intensity of the AlGaN material decreases as the Al composition decreases;
along the AlN layer to the GaN layer, negative net polarization charges are generated as the Al composition changes from high to low, as shown in FIG. 3 (c);
negative net polarization charge can increase the material energy band, thereby increasing the ionization energy of donor impurities, reducing the ionization energy of acceptor impurities, reducing the generation probability of background electron carriers, and promoting the generation of free hole carriers, as shown in fig. 3 (d);
therefore, the concentration of background electron carriers in the unintentionally doped nitride material can be compensated by utilizing the polarization effect, so that the high-resistance buffer layer material is realized, and the leakage current in the device is reduced.
Further, CrossLight simulation software is used to simulate the energy band structure of the HEMT device according to the embodiment of the present invention, and the simulation result is shown in fig. 4. The introduction of the Al component gradient buffer layer can effectively reduce Ef-EV(Fermi level and top energy difference of valence band, EfFermi level, EVValence band) based on the hole carrier concentration
Reduction of Ef-EVGeneration of free hole carriers can be promoted; meanwhile, E can be effectively increased by introducing the Al component gradient buffer layerC-Ef(energy difference between conduction band bottom and Fermi level, ECConduction band) based on the calculation formula of the electron carrier concentration
Increase of EC-EfThe generation of free electron carriers can be suppressed, thereby realizing epitaxial growth of the high-resistance buffer layer. The lower graph is the simulation result. From the results in the figure, it is known that E can be effectively reduced by utilizing the polarization effectf-EVAnd increase EC-EfThe buffer layer is beneficial to inducing the generation of hole carriers and inhibiting the generation of n-type electrons, thereby realizing the high-resistance buffer layer.
In another aspect, an embodiment of the present invention provides a method for manufacturing an epitaxial structure of an HEMT device, including the following steps:
s01: epitaxially growing an AlN layer on the substrate;
s02: introducing a gaseous Ga source on the basis of the AlN layer, wherein the flow is gradually increased from 0, introducing a gaseous Al source at the same time, and gradually decreasing the flow to 0, NH3As N source, epitaxially growing a polarization buffer layer;
s03: epitaxially growing a GaN layer on the polarization buffer layer;
s04: and epitaxially growing an AlGaN layer on the GaN layer.
In the step S01, the growth pressure of the AlN layer is <50 mBar; the growth temperature is more than 1000 ℃. The substrate may be cleaned at high temperature (1150 ℃) for 10 minutes under H2 before growth to ensure the performance of the substrate.
In the preparation process of the epitaxial structure of the HEMT device, the growth method of each layer comprises at least one of an MOCVD method, an MBE method and an HVPE method. The preparation method has higher requirement on the content of a certain component in the layer structure, so that the content of the component is controlled by controlling the gas flow by adopting a better controlled gas phase method.
In the step S02, the gaseous Ga source is TMGa; the gaseous Al source is TMAl. The Ga source and the Al source are most commonly used, but are not limited to other gas-phase Ga sources and Al sources.
On the other hand, the embodiment of the invention provides the application of the preparation method of the epitaxial structure of the HEMT device in the preparation of a normally-open HEMT device and an enhanced HEMT device. Specifically, the epitaxial structure of the HEMT device with the polarization buffer layer is prepared by the preparation method, and then the complete normally-open HEMT device and the complete enhancement type HEMT device are obtained through necessary processing (the necessary processing and modification are conventional technical means in the prior art and are not repeated herein).
Claims (10)
1. An epitaxial structure of a HEMT device, comprising: the device comprises a substrate layer, and an AlN layer, a polarization buffer layer, a GaN layer and an AlGaN layer which are sequentially arranged along the direction far away from the substrate layer; the polarization buffer layer is made of AlGaN material with the Al content gradually reduced along the direction from the AlN layer to the GaN layer.
2. The HEMT device epitaxial structure of claim 1, wherein: the gradient of the Al content of the polarization buffer layer along with the thickness change is 0.05 percent of Al/nm to 5 percent of Al/nm.
3. The HEMT device epitaxial structure of claim 1, wherein: the thickness of the GaN layer is not more than 50 nm.
4. The HEMT device epitaxial structure of claim 1, wherein: the content of Al in the AlGaN layer is 10-40%.
5. The HEMT device epitaxial structure of claim 1, wherein: the substrate layer is made of sapphire.
6. A preparation method of an epitaxial structure of an HEMT device is characterized by comprising the following steps:
epitaxially growing an AlN layer on the substrate;
introducing a gaseous Ga source on the basis of the AlN layer, wherein the flow rate is gradually increased from 0; simultaneously introducing a gaseous Al source, and gradually reducing the flow to 0; simultaneously, NH3 is uniformly introduced to serve as an N source, and a polarization buffer layer grows epitaxially;
epitaxially growing a GaN layer on the polarization buffer layer;
and epitaxially growing an AlGaN layer on the GaN layer.
7. The method of claim 6, wherein: the growth pressure of the AlN layer is less than 50 mBar; the growth temperature is more than 1000 ℃.
8. The method of claim 6, wherein: the growth method of each layer comprises at least one of MOCVD method, MBE method and HVPE method.
9. The method of claim 6, wherein: the gaseous Ga source is TMGa; the gaseous Al source is TMAl.
10. Use of the production method according to any one of claims 6 to 9 for producing a normally-on HEMT device and an enhancement HEMT device.
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| WO2022143778A1 (en) * | 2020-12-29 | 2022-07-07 | 苏州能讯高能半导体有限公司 | Epitaxial structure of semiconductor device, preparation method, and semiconductor device |
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| CN104241352A (en) * | 2014-09-26 | 2014-12-24 | 中国科学院半导体研究所 | GaN-based HEMT structure with polarized induction doped high-resistance layer and growing method of GaN-based HEMT structure |
| CN109638066A (en) * | 2018-11-28 | 2019-04-16 | 中国科学院半导体研究所 | Double heterojunction HEMT containing content gradually variational high resistance buffer layer and preparation method thereof |
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