CN100379019C - Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof - Google Patents
Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof Download PDFInfo
- Publication number
- CN100379019C CN100379019C CNB2004100099901A CN200410009990A CN100379019C CN 100379019 C CN100379019 C CN 100379019C CN B2004100099901 A CNB2004100099901 A CN B2004100099901A CN 200410009990 A CN200410009990 A CN 200410009990A CN 100379019 C CN100379019 C CN 100379019C
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- layer
- double
- growth
- mobility
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention relates to a double-heterostructur GaN-based high-electron mobility transistor structure. The present invention is characterized in that the structure comprises a substrate which is a sapphire substrate or a silicon carbide substrate or a silicon substrate, a high-resistance gallium nitride buffer layer prepared on the substrate, a thin unpurposed ALGaN doped insert layer prepared on the high-resistance gallium nitride buffer layer, a high-mobility gallium nitride channel layer prepared on the thin unpurposed ALGaN doped insert layer, a thin aluminium nitride insert layer prepared on the high-mobility gallium nitride channel layer, and an n-type doped or unpurposed doped ALGaN barrier layer prepared on the thin aluminium nitride insert layer.
Description
Technical field
The invention belongs to technical field of semiconductors, especially refer to the structure and the manufacture method thereof of the aluminum-gallium-nitrogen/gallium nitride transistor with high electron mobility (AlGaN/GaN HEMT) of novel double-heterostructure.
Background technology
The AlGaN/GaN high electron mobility transistor structure that III-V family gallium nitride (GaN) and compound semiconductor materials thereof form is at high temperature, high frequency, high-power, radioresistance microwave device and circuit field have very important application prospect, this mainly is to have big energy gap because form the semi-conducting material of AlGaN/GaN heterostructure, high breakdown electric field, good chemical stability and strong capability of resistance to radiation, also because the GaN material has high electronics saturation drift velocity and peak shift speed, the more important thing is simultaneously because GaN material one side can form the two-dimensional electron gas with high electron concentration and high electron mobility near the AlGaN/GaN heterojunction boundary.The AlGaN/GaN High Electron Mobility Transistor has important effect at aspects such as space flight and aviation, high temperature intense radiation environment, oil exploration, automation, radar and communications, automotive electronics.
Current, to the emphasis of AlGaN/GaN High Electron Mobility Transistor research, the first further improves every output characteristic of device, satisfies the application of device under high temperature, high frequency, high-power condition.The key point that improves GaN based high electron mobility transistor and circuit performance is to improve the concentration and the mobility of two-dimensional electron gas in the raceway groove, improves the output current density and the power density of device thus.At present,, generally adopt the barrier layer doped structure, mix, can improve two-dimensional electron gas in the raceway groove to a certain extent by the AlGaN barrier layer being carried out the n type in order to improve two-dimensional electron gas and mobility in the HEMT structure raceway groove.But because the characteristic of GaN sill is entrained in to improve on the electron concentration and only plays deputy effect, the channel electrons that is caused by polarity effect is topmost; And the doping of barrier layer n type, certainly will increase the difficulty that material is grown, reduce the crystal mass of HEMT structural material, so the validity of this method also needs further discussion.
Two of the emphasis of raising device performance research is the destabilizing factors that solve the device practical work process, improves the stability and the reliability of device, satisfies the practicability requirement of device.In the research to the AlGaN/GaNHEMT reliability and stability, the greatest problem of restriction device practicability is the current collapse effect, and promptly device output current when High-Field or radiofrequency signal reduces, and knee voltage increases, the phenomenon that power output reduces.Current formation reason about AlGaN/GaN HEMT device current avalanche effect, there are many disputes, the empty bar phantom of the more convictive first, be under the radiofrequency signal, channel electrons is captured by the trap center on AlGaN barrier layer surface, has caused reducing of channel electrons concentration, and the surface state trapped electron forms empty grid, the modulation channel current causes that channel current reduces, and has formed current collapse; It two is high resistant GaN resilient coating models, and during High-Field, channel electrons is captured by the trap center of high resistant (semi-insulating) GaN resilient coating, has caused reducing of channel electrons concentration, and channel current reduces, and has formed current collapse.So, reduce channel electrons leakage to both sides when condition changing, guarantee the stability of channel electrons, be to reduce the effective measures that person very eliminates the current collapse effect fully.
According to above argumentation as seen, improve the channel electrons concentration of AlGaN/GaN HEMT, increase electron mobility, the restriction electronics is the key point of raising device performance and reliability, stability to the leakage of adjacent bed.
Summary of the invention
The high electron mobility transistor structure that the purpose of this invention is to provide a kind of double-heterostructure, the High Electron Mobility Transistor of this kind structure can limit the leakage of channel electrons to both direction effectively, increase channel electrons concentration and mobility, improve the output characteristic of device, reduce the volume and weight of microwave system; This structure can also suppress the current collapse effect effectively, improves the stability and the reliability of device, promotes the practicalization of device.
Another object of the present invention provides the preparation method of described High Electron Mobility Transistor.
A kind of double-heterostructure gallium nitride based transistor structure with high electron mobility of the present invention is characterized in that, comprising:
One substrate, this substrate are Sapphire Substrate or silicon carbide substrates or silicon substrate;
One high resistant gallium nitride resilient coating, this high resistant gallium nitride resilient coating is produced on the substrate;
The involuntary doping aluminum gallium nitride of skim insert layer, this involuntary doping aluminum gallium nitride insert layer is produced on the high resistant gallium nitride resilient coating;
One high mobility gallium nitride channel layer, this high mobility gallium nitride channel layer are produced on the involuntary doping aluminum gallium nitride insert layer;
Skim aln inserting layer, this aln inserting layer are produced on the high mobility gallium nitride channel layer;
One n type mixes or involuntary doping aluminum gallium nitride barrier layer, and this n type mixes or involuntary doping aluminum gallium nitride barrier layer is produced on the thin layer aln inserting layer.
Growth one deck thicker semi-insulating gallium nitride resilient coating of high resistant on Sapphire Substrate or silicon carbide substrates or silicon substrate wherein, the about 1.5-3.5 μ of growth thickness m.
The involuntary doping aluminum gallium nitride of the thin layer insert layer of wherein growing on the semi-insulating gallium nitride resilient coating of high resistant, thickness is 5-10nm.
Growth high mobility gallium nitride channel layer on the aluminum gallium nitride insert layer wherein, growth thickness is about 50-100nm.
Growth skim aln inserting layer on the high mobility gallium nitride channel layer wherein, thickness is 1-5nm.
Wherein the n type of growing high-quality mixes or the aluminum gallium nitride barrier layer of involuntary doping on the aln inserting layer, and thickness is 20-30nm.
The manufacture method of a kind of double-heterostructure GaN base transistor with high electronic transfer rate of the present invention is characterized in that, comprises the steps:
Step 1: on Sapphire Substrate or silicon carbide substrates or silicon substrate crystal face, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or hydride gas-phase epitaxy method growth one deck high resistant gallium nitride resilient coating earlier;
Step 2: the involuntary doping aluminum gallium nitride of growth skim insert layer on high resistant gallium nitride resilient coating, utilize the characteristics of its energy gap greater than gallium nitride, the restriction channel electrons is revealed to high resistant gallium nitride resilient coating direction;
Step 3: growth high mobility gallium nitride channel layer on the involuntary doping aluminum gallium nitride of thin layer insert layer provides the electron motion raceway groove;
Step 4: growth skim aln inserting layer on high mobility gallium nitride channel layer, this thin layer aln inserting layer can improve the concentration and the mobility of two-dimentional electronics, improves the combination property of transistor material;
Step 5: growing n-type mixes or involuntary doping aluminum gallium nitride barrier layer on the thin layer aln inserting layer.
Wherein on Sapphire Substrate or silicon carbide substrates or silicon substrate crystal face, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or the thicker semi-insulating gallium nitride resilient coating of high resistant of hydride gas-phase epitaxy method growth one deck, the about 1.5-3.5 μ of growth thickness m.
Growth skim involuntary doping aluminum gallium nitride insert layer on the semi-insulating gallium nitride resilient coating of high resistant wherein, thickness is 5-10nm.
Growth high mobility gallium nitride channel layer on the aluminum gallium nitride insert layer wherein, growth thickness is about 50-100nm.
Growth skim aln inserting layer on the high mobility gallium nitride channel layer wherein, thickness is 1-5nm.
Wherein the n type of growing high-quality mixes or the aluminum gallium nitride barrier layer of involuntary doping on the aln inserting layer, and thickness is 20-30nm.
Description of drawings
For further specifying content of the present invention, below in conjunction with embodiment the present invention is done a detailed description, wherein:
Fig. 1 is GaN, AlN, three kinds of compound energy gaps of InN schematic diagram;
Fig. 2 is the band structure schematic diagram of various different HEMT structures.Fig. 2 (a) is the AlGaN/AlN/GaN/AlGaN HEMT with double-heterostructure of the present invention; Fig. 2 (b) is traditional AlGaN/GaN HEMT structure;
Fig. 3 is high resistant of the present invention (semi-insulating) GaN buffer growth structural representation;
Fig. 4 is thin layer Al of the present invention
xGa
1-xThe growth structure schematic diagram of N (0＜x≤1) insert layer;
Fig. 5 is a high mobility GaN channel layer growth structure schematic diagram of the present invention;
Fig. 6 is a thin layer AlN insert layer growth structure schematic diagram of the present invention;
Fig. 7 is Si Doped n-type of the present invention or involuntary doped with Al GaN barrier layer growth structure schematic diagram.
Table 1 is that the AlGaN/AlN/GaN/AlGaN HEMT of double-heterostructure of the present invention and traditional two kinds of structure normal temperature of AlGaN/GaN HEMT Hall test result compare.
Table 1,
| Project organization | Sample number | Electron mobility (μ) cm2V -1s -1 | Electron concentration (ns) cm -2 | N s×μ (V -1s -1) |
| AlGaN/GaN | M288 | 1490 | 1.0×10 13 | 1.49×10 16 |
| AlGaN/AlN/GaN/AlGaN | M428 | 1462 | 1.31×10 13 | 1.92×10 16 |
The operation principle of the HEMT of this project organization can be explained as follows:
One, the Main Function of ground floor high resistant (semi-insulating) gallium nitride cushion is to reduce the device electricity Flow leakage, the switching characteristic of optimised devices, and guarantee on it growth of other epitaxial loayer of growth Quality improves device performance;
Two, thin layer aluminum gallium nitride (AlxGa
1-xN, 0＜x≤1) effect of insert layer is to utilize it Energy gap is greater than the characteristics of gallium nitride, when stoping High-Field channel electrons to the leakage of cushion direction, Reduce electronics and be cushioned the probability that the deep trap energy level is captured in the layer, effectively suppress the High-Field current collapse Effect; Simultaneously, by improving the crystal mass of aluminum gallium nitride insert layer, reduce the scattering of electronics, increase Add electron mobility.
Three, the effect of high mobility gallium nitride channel layer is to provide a high-quality operation for electronics Passage, density and the mobility of assurance Two-dimensional electron.
Four, the effect of thin layer aln inserting layer utilizes the bigger taboo of aluminium nitride with the aluminum gallium nitride thin layer Bandwidth, the restriction electronics suppresses because surface state or aluminium to the leakage on aluminum gallium nitride barrier layer and surface The current collapse effect that DX center trapped electron causes in the gallium nitrogen barrier layer; Simultaneously, utilize binary Compound separates channel electrons and ternary compound aluminum gallium nitride barrier layer, has reduced the scattering of electronics, Increased channel electron mobility.
Five, the effect of Si Doped n-type or involuntary doping aluminum gallium nitride barrier layer provides channel electrons.
Comprehensive above-mentioned explanation, double-heterostructure HEMT of the present invention can be effective Restriction channel electrons in ground increases channel electrons concentration and mobility to the leakage of both direction, improves The output characteristics of device; Simultaneously can effectively suppress the current collapse effect, improve the stable of device Property and reliability. Therefore, HEMT of the present invention is a kind of very potential new Structure.
Embodiment
As shown in Figure 7, be the schematic diagram of double-heterostructure high electron mobility transistor structure of the present invention.In this field-effect transistor structure, the parts of most critical are Al
xGa
1-xN (0＜x≤1)/GaN/AlN double-heterostructure.The AlGaN insert layer 30 of growth can not be too thick on high resistant (semi-insulating) the GaN resilient coating 20, guarantees that Grown GaN channel layer 40 crystal mass are higher on it, the raceway groove of high mobility is provided for two-dimentional electronics; AlN insert layer 50 thickness also will be controlled between the 1-5nm.
See also Fig. 3 to Fig. 7, a kind of double-heterostructure gallium nitride based transistor structure with high electron mobility of the present invention comprises:
One substrate 10, this substrate 10 is Sapphire Substrate or silicon carbide substrates or silicon substrate;
One high resistant gallium nitride resilient coating 20, this high resistant gallium nitride resilient coating 20 is produced on (see figure 3) on the substrate 10; The thicker semi-insulating gallium nitride resilient coating 20 of high resistant of one deck of growth on this substrate 10, the about 1.5-3.5 μ of growth thickness m;
The involuntary doping aluminum gallium nitride of skim insert layer 30, this involuntary doping aluminum gallium nitride insert layer 30 is produced on (see figure 4) on the high resistant gallium nitride resilient coating 20; The involuntary doping aluminum gallium nitride of the thin layer insert layer 30 of growth on the semi-insulating gallium nitride resilient coating 20 of this high resistant, thickness is 5-10nm;
One high mobility gallium nitride channel layer 40, this high mobility gallium nitride channel layer 40 is produced on (see figure 5) on the involuntary doping aluminum gallium nitride insert layer 30; The high mobility gallium nitride channel layer 40 of growth on this aluminum gallium nitride insert layer 30, growth thickness is about 50-100nm;
Skim aln inserting layer 50, this aln inserting layer 50 is produced on (see figure 6) on the high mobility gallium nitride channel layer 40; The skim aln inserting layer 50 of growth on this high mobility gallium nitride channel layer 40, thickness is 1-5nm;
One n type mixes or involuntary doping aluminum gallium nitride barrier layer 60, this n type mixes or involuntary doping aluminum gallium nitride barrier layer 60 is produced on (see figure 7) on the thin layer aln inserting layer 50, the high-quality n type doping of growth or the aluminum gallium nitride barrier layer 60 of involuntary doping on this aln inserting layer 50, thickness is 20-30nm.
Please in conjunction with consulting Fig. 3 to Fig. 7, the manufacture method of a kind of double-heterostructure GaN base transistor with high electronic transfer rate of the present invention comprises the steps: again
Step 1: adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or hydride gas-phase epitaxy method growth one deck high resistant gallium nitride resilient coating 20 earlier on substrate 10 crystal faces, this substrate 10 is Sapphire Substrate or silicon carbide substrates or silicon substrate; On these substrate 10 crystal faces, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or the thicker semi-insulating gallium nitride resilient coating 20 of high resistant of hydride gas-phase epitaxy method growth one deck, the about 1.5-3.5 μ of growth thickness m;
Step 2: the involuntary doping aluminum gallium nitride of growth skim insert layer 30 on high resistant gallium nitride resilient coating 20, utilize the characteristics of its energy gap greater than gallium nitride, the restriction channel electrons is revealed to high resistant gallium nitride resilient coating direction; Growth skim involuntary doping aluminum gallium nitride insert layer 30 on the semi-insulating gallium nitride resilient coating 20 of this high resistant wherein, thickness is 5-10nm;
Step 3: growth high mobility gallium nitride channel layer 40 on the involuntary doping aluminum gallium nitride of thin layer insert layer 30 provides the electron motion raceway groove; Growth high mobility gallium nitride channel layer 40 on this aluminum gallium nitride insert layer 30 wherein, growth thickness is about 50-100nm;
Step 4: growth skim aln inserting layer 50 on high mobility gallium nitride channel layer 40, this thin layer aln inserting layer 50 can improve the concentration and the mobility of two-dimentional electronics, improves the combination property of transistor material; Growth skim aln inserting layer 50 on this high mobility gallium nitride channel layer 40 wherein, thickness is 1-5nm;
Step 5: growing n-type mixes or involuntary doping aluminum gallium nitride barrier layer 60 on thin layer aln inserting layer 50; Wherein the n type of growing high-quality mixes or the aluminum gallium nitride barrier layer 60 of involuntary doping on this aln inserting layer 50, and thickness is 20-30nm.
Embodiment (consult Fig. 3-Fig. 7):
(1), at first on substrate sapphire 10 (0001) crystal faces, adopts thicker high resistant (semi-insulating) the gallium nitride resilient coating 20 of molecular beam epitaxy technique growth one deck, about 1000 ℃ of growth temperature, the about 1.5-3.5 μ of growth thickness m, (Fig. 3) this high resistant (semi-insulating) gallium nitride resilient coating 20 can adopt methods such as ion injection, doping, compensation to generate, main purpose is that the resilient coating of electric current is revealed when reducing device work, prevent the mis-behave that the device working temperature raises and causes, improve the stability of device.
(2), next growth skim aluminum gallium nitride (Al on high resistant (semi-insulating) gallium nitride resilient coating 20
xGa
1-xN, 0＜x≤1) insert layer 30, thickness is 5-10nm, (Fig. 4) as required, the Al component x of this aluminum gallium nitride insert layer 30 can regulate the size of its energy gap with this between 0＜x≤1.
(3), then growth high mobility gallium nitride channel layer 40 on involuntary doping aluminum gallium nitride insert layer 30, growth temperature is 1050 ℃, growth thickness is about 50-100nm, (Fig. 5) to change the purpose of layer be to provide orbit to two-dimentional electronics in growth.
(4), growth skim aln inserting layer 50 on the high mobility gallium nitride channel layer 40 then, thickness is 1-5nm.(Fig. 6)
(5), aluminum gallium nitride insert layer 30, gallium nitride channel layer 40, aln inserting layer 50 form a kind of double-heterostructure, this is a key point of the present invention, because the energy gap of aluminum gallium nitride 30, aluminium nitride 50 is greater than gallium nitride 40, therefore can limit in the channel layer electronics to the leakage of both sides, increase channel electrons concentration, increase the stable of device performance.
(6), the aluminum gallium nitride barrier layer 60 of last growing high-quality Si Doped n-type or involuntary doping on aln inserting layer 50, thickness is 20-30nm, (Fig. 7) effect of this layer provides channel electrons.Because the very strong polarization of III-V group-III nitride, so even the 60 involuntary doping of AlGaN barrier layer, channel electrons also can reach 10
13Cm
-2If, carry out n type Si and mix, can improve electron concentration, but increase material growth difficulty, so the doping problem need be weighed consideration.
Shown in Fig. 2 (a), can compare its difference in conjunction with consulting Fig. 2 (b) with its band structure of HEMT structure of the method growth, Fig. 1 is consulted in cooperation simultaneously, and Fig. 1 is GaN, AlN, three kinds of compound energy gaps of InN schematic diagram.The present invention is according to the characteristics of the different energy gaps of GaN sill, the bigger Al of energy gap
xGa
1-xThe less GaN of N (0＜x≤1), AlN and energy gap forms double-heterostructure, be limited in the two-dimentional electronics in the high mobility GaN epitaxial loayer in the channel layer fully, can suppress the channel electrons leakage of both direction up and down effectively, increased channel electrons concentration, reduced its chance that is scattered, increase electron mobility, improved the output characteristic of device; Simultaneously, because to the good restriction of channel electrons, also reduce the influence to device such as temperature, electric field strength, suppressed under the High-Field high resistant (semi-insulating) gallium nitride resilient coating effectively and captured the current collapse effect that channel electrons causes, improved the reliability and stability of device.The room temperature hall measurement shows that this high electron mobility transistor structure has good electrology characteristic (table 1), and two-dimensional electron gas is 1.31 * 10 under the sample room temperature
13Cm
-2, mobility is 1462cm
2/ V.s, the product of mobility and electron concentration is up to 1.92 * 10
16V
-1s
- 1, be far longer than traditional AlGaN/GaN HEMT structure, show that AlGaN/AlN/GaN/AlGaN HEMT structure of the present invention can increase channel electrons concentration and mobility greatly, improve electric properties of devices.
The present invention has made full use of the self character of material, increases channel electrons concentration and mobility, improves the output characteristic of device; Simultaneously can suppress the current collapse effect effectively, improve the stability and the reliability of device.Its technology is simply effective, be a kind of novel high electron mobility transistor structure that can improve device performance and reliability, stability greatly, for the manufacturing of high-performance high temperature, high-power, high frequency, radioresistance AlGaN/GaN microwave device and circuit lays the foundation.
Claims (12)
1. a double-heterostructure gallium nitride based transistor structure with high electron mobility is characterized in that, comprising:
One substrate, this substrate are Sapphire Substrate or silicon carbide substrates or silicon substrate;
One high resistant gallium nitride resilient coating, this high resistant gallium nitride resilient coating is produced on the substrate;
The involuntary doping aluminum gallium nitride of skim insert layer, this involuntary doping aluminum gallium nitride insert layer is produced on the high resistant gallium nitride resilient coating;
One high mobility gallium nitride channel layer, this high mobility gallium nitride channel layer are produced on the involuntary doping aluminum gallium nitride insert layer;
Skim aln inserting layer, this aln inserting layer are produced on the high mobility gallium nitride channel layer;
One n type mixes or involuntary doping aluminum gallium nitride barrier layer, and this n type mixes or involuntary doping aluminum gallium nitride barrier layer is produced on the thin layer aln inserting layer.
2. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1, it is characterized in that, growth one deck thicker semi-insulating gallium nitride resilient coating of high resistant on Sapphire Substrate or silicon carbide substrates or silicon substrate wherein, the about 1.5-3.5 μ of growth thickness m.
3. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1 is characterized in that, the involuntary doping aluminum gallium nitride of the thin layer insert layer of growing on the semi-insulating gallium nitride resilient coating of high resistant wherein, and thickness is 5-10nm.
4. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1 is characterized in that, the high mobility gallium nitride channel layer of wherein growing on the aluminum gallium nitride insert layer, and growth thickness is about 50-100nm.
5. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1 is characterized in that, the skim aln inserting layer of wherein growing on the high mobility gallium nitride channel layer, and thickness is 1-5nm.
6. double-heterostructure gallium nitride based transistor structure with high electron mobility according to claim 1 is characterized in that, wherein the n type of growing high-quality mixes or the aluminum gallium nitride barrier layer of involuntary doping on the aln inserting layer, and thickness is 20-30nm.
7. the manufacture method of a double-heterostructure GaN base transistor with high electronic transfer rate is characterized in that, comprises the steps:
Step 1: on the substrate crystal face, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or hydride gas-phase epitaxy method growth one deck high resistant gallium nitride resilient coating earlier; This substrate is Sapphire Substrate or silicon carbide substrates or silicon substrate;
Step 2: the involuntary doping aluminum gallium nitride of growth skim insert layer on high resistant gallium nitride resilient coating, utilize the characteristics of its energy gap greater than gallium nitride, the restriction channel electrons is revealed to high resistant gallium nitride resilient coating direction;
Step 3: growth high mobility gallium nitride channel layer on the involuntary doping aluminum gallium nitride of thin layer insert layer provides the electron motion raceway groove;
Step 4: growth skim aln inserting layer on high mobility gallium nitride channel layer, this thin layer aln inserting layer can improve the concentration and the mobility of two-dimentional electronics, improves the combination property of transistor material;
Step 5: growing n-type mixes or involuntary doping aluminum gallium nitride barrier layer on the thin layer aln inserting layer.
8. the manufacture method of double-heterostructure GaN base transistor with high electronic transfer rate according to claim 7, it is characterized in that, wherein on Sapphire Substrate or silicon carbide substrates or silicon substrate crystal face, adopt metal-organic chemical vapor deposition equipment method or molecular beam epitaxial method or the thicker semi-insulating gallium nitride resilient coating of high resistant of hydride gas-phase epitaxy method growth one deck, the about 1.5-3.5 μ of growth thickness m.
9. the manufacture method of double-heterostructure GaN base transistor with high electronic transfer rate according to claim 7 is characterized in that, the involuntary doping aluminum gallium nitride of the skim insert layer of wherein on the semi-insulating gallium nitride resilient coating of high resistant, growing, and thickness is 5-10nm.
10. the manufacture method of double-heterostructure GaN base transistor with high electronic transfer rate according to claim 7 is characterized in that, the high mobility gallium nitride channel layer of wherein on the aluminum gallium nitride insert layer, growing, and growth thickness is about 50-100nm.
11. the manufacture method of double-heterostructure GaN base transistor with high electronic transfer rate according to claim 7 is characterized in that, the skim aln inserting layer of wherein on high mobility gallium nitride channel layer, growing, and thickness is 1-5nm.
12. the manufacture method of double-heterostructure GaN base transistor with high electronic transfer rate according to claim 7 is characterized in that, wherein the n type of growing high-quality mixes or the aluminum gallium nitride barrier layer of involuntary doping on the aln inserting layer, and thickness is 20-30nm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100099901A CN100379019C (en) | 2004-12-09 | 2004-12-09 | Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100099901A CN100379019C (en) | 2004-12-09 | 2004-12-09 | Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1787229A CN1787229A (en) | 2006-06-14 |
| CN100379019C true CN100379019C (en) | 2008-04-02 |
Family
ID=36784602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100099901A Expired - Fee Related CN100379019C (en) | 2004-12-09 | 2004-12-09 | Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100379019C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101266999B (en) * | 2007-03-14 | 2010-05-19 | 中国科学院半导体研究所 | GaN dual heterogeneity node field effect transistor structure and its making method |
| CN101621004B (en) * | 2009-08-06 | 2010-10-27 | 杭州电子科技大学 | Method for enhancing characteristic frequency and linearity of gallium nitride transistor with high electron mobility |
| CN102205951B (en) * | 2011-04-13 | 2013-03-06 | 新疆大学 | Method for preparing aluminum nitride and gallium nitride nanorod heterojunction |
| CN102903738B (en) * | 2012-09-06 | 2016-08-17 | 苏州晶湛半导体有限公司 | III nitride semiconductor devices and manufacture method thereof |
| CN102842613B (en) * | 2012-09-18 | 2016-01-13 | 中国科学院半导体研究所 | Double-heterostructure gallium nitride based transistor structure with high electron mobility and manufacture method |
| CN104465720A (en) * | 2014-12-05 | 2015-03-25 | 中山大学 | Semiconductor epitaxial structure and growth method thereof |
| CN105322009A (en) * | 2015-11-09 | 2016-02-10 | 江西省昌大光电科技有限公司 | Gallium nitride based high electronic mobility transistor epitaxial structure and manufacturing method therefor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133332A (en) * | 2001-10-24 | 2003-05-09 | Shin Etsu Handotai Co Ltd | Compound semiconductor element |
| WO2003049193A1 (en) * | 2001-12-03 | 2003-06-12 | Cree, Inc. | Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors |
| JP2004140042A (en) * | 2002-10-16 | 2004-05-13 | Sony Corp | High electron mobility transistor |
| US20040238842A1 (en) * | 2003-06-02 | 2004-12-02 | Hrl Laboratories, Llc | GaN DHFET |
-
2004
- 2004-12-09 CN CNB2004100099901A patent/CN100379019C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003133332A (en) * | 2001-10-24 | 2003-05-09 | Shin Etsu Handotai Co Ltd | Compound semiconductor element |
| WO2003049193A1 (en) * | 2001-12-03 | 2003-06-12 | Cree, Inc. | Strain balanced nitride heterojunction transistors and methods of fabricating strain balanced nitride heterojunction transistors |
| JP2004140042A (en) * | 2002-10-16 | 2004-05-13 | Sony Corp | High electron mobility transistor |
| US20040238842A1 (en) * | 2003-06-02 | 2004-12-02 | Hrl Laboratories, Llc | GaN DHFET |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1787229A (en) | 2006-06-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN100495724C (en) | Gallium nitride radical heterojunction field effect transistor structure and method for making the same | |
| US20050133816A1 (en) | III-nitride quantum-well field effect transistors | |
| CN101399284B (en) | Gallium nitride based transistor structure with high electron mobility | |
| CN101266999B (en) | GaN dual heterogeneity node field effect transistor structure and its making method | |
| WO2004107406A2 (en) | Semiconductor electronic devices and methods | |
| CN104600109A (en) | High pressure resistant nitride semiconductor epitaxial structure and growing method thereof | |
| CN102427084B (en) | Gallium-nitride-based high electron mobility transistor and manufacturing method | |
| CN103123934B (en) | The gallium nitride based transistor structure with high electron mobility of tool barrier layer and manufacture method | |
| CN100397655C (en) | Structure of improving gallium nitride base high electronic mobility transistor property and producing method | |
| CN102789982A (en) | Enhanced A1N/GaN high-electron mobility transistor and fabrication method thereof | |
| CN102569390A (en) | High-breakdown gallium nitride-based field effect transistor device and manufacturing method thereof | |
| CN103633134B (en) | A kind of thick-film high-resistance nitride semiconductor epitaxy structure and growing method thereof | |
| CN102881715A (en) | High-frequency and low-noise gallium nitride transistor structure with high electronic mobility | |
| CN102931230B (en) | Aluminum gallium nitride does the gallium nitrate based HEMT of double heterojunction and the manufacture method of resistive formation | |
| CN100418199C (en) | Method for fabricating transistor of aluminum-gallium-nitrogen/gallium nitride with high electron mobility | |
| CN106024881A (en) | Dual-heterogeneous gallium nitride based field effect transistor structure and manufacturing method | |
| CN105047695A (en) | High-resistance substrate for high-electron-mobility transistor and growing method thereof | |
| CN100379019C (en) | Crystal tube structure with high electronic shifting ratio of gallium nitrate base of double heterogenous structure and mfg. method thereof | |
| CN100383980C (en) | Structure for improving Schottky performance of grid electrode of gallium nitride based transistor in high electron mobility | |
| CN101005034A (en) | Silion carbide substrate gallium nitride high electronic transport ratio transistor and producing method | |
| CN102544086B (en) | GaN-based high-electron-mobility transistor and manufacturing method thereof | |
| CN102842613A (en) | Double-heterostructure GaN-based high-electron mobility transistor structure and preparation method | |
| CN106601790A (en) | Longitudinal modulated doped gallium-nitride-based field effect transistor structure and manufacturing method thereof | |
| CN102299170B (en) | GaAs pseudomorphic high-electron-mobility transistor epitaxy material | |
| US7126171B2 (en) | Bipolar transistor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080402 |