CN104241351B - Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure - Google Patents
Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure Download PDFInfo
- Publication number
- CN104241351B CN104241351B CN201410454183.4A CN201410454183A CN104241351B CN 104241351 B CN104241351 B CN 104241351B CN 201410454183 A CN201410454183 A CN 201410454183A CN 104241351 B CN104241351 B CN 104241351B
- Authority
- CN
- China
- Prior art keywords
- gallium nitride
- plate structure
- field plate
- electrode
- internal composite
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 87
- 239000002131 composite material Substances 0.000 title claims abstract description 47
- 230000005669 field effect Effects 0.000 title claims abstract description 25
- 239000004065 semiconductor Substances 0.000 claims abstract description 7
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 23
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 21
- 150000004767 nitrides Chemical class 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 20
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000001727 in vivo Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 230000001934 delay Effects 0.000 claims 1
- 230000008901 benefit Effects 0.000 abstract description 5
- 238000005516 engineering process Methods 0.000 abstract description 5
- 108091006146 Channels Proteins 0.000 description 29
- 230000005684 electric field Effects 0.000 description 19
- 230000015556 catabolic process Effects 0.000 description 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000005533 two-dimensional electron gas Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 241000790917 Dioxys <bee> Species 0.000 description 1
- 102000004129 N-Type Calcium Channels Human genes 0.000 description 1
- 108090000699 N-Type Calcium Channels Proteins 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- -1 aluminum gallium nitrides Chemical class 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000005516 deep trap Effects 0.000 description 1
- 238000010893 electron trap Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 125000005842 heteroatom Chemical group 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000005036 potential barrier Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
- H01L29/407—Recessed field plates, e.g. trench field plates, buried field plates
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
The present invention relates to semiconductor technology.The present invention solves the problems, such as that existing gallium nitride radical heterojunction field effect transistor is not pressure-resistant high, there is provided a kind of gallium nitride radical heterojunction field effect pipe with internal composite field plate structure, its technical solution can be summarized as：Compared with existing common GaN HFET (gallium nitride radical heterojunction field effect transistor), the gallium nitride radical heterojunction field effect pipe with internal composite field plate structure of the present invention is also made of with internal composite field plate structure, the internal composite field plate structure electrode and insulating medium layer.The invention has the advantages that increase device is pressure-resistant, suitable for gallium nitride radical heterojunction field effect transistor.
Description
Technical field
The present invention relates to semiconductor technology, more particularly to gallium nitride (GaN) radical heterojunction field effect transistor strain N-channel
Mos field effect transistor (NMOSFET).
Background technology
Gallium nitride (GaN) radical heterojunction field effect transistor (HFET) is with energy gap is big, critical breakdown electric field is high, electric
The excellent specific properties such as sub- saturated velocity height, good heat conductivity, radioresistance and good chemical stability, while gallium nitride material can be with
The two-dimensional electron gas hetero-junctions raceway groove with high concentration and high mobility is formed with materials such as aluminum gallium nitrides (AlGaN), therefore especially
It is one of most potential transistor of applied power electronics suitable for high pressure, high-power and high temperature application.
Fig. 1 is common GaN HFET (gallium nitride radical heterojunction field effect transistor) structure diagram of the prior art, mainly
Including substrate 107, gallium nitride (GaN) cushion 106, gallium nitride (GaN) channel layer 105, aluminum gallium nitride (AlGaN) barrier layer 104
And formed on aluminum gallium nitride (AlGaN) barrier layer 104 source electrode 101, drain electrode 102 and grid 103, wherein nitride buffer layer
106 are arranged on the top of substrate 107, and gallium nitride channel layer 105 is arranged on the top of nitride buffer layer 106, aluminum gallium nitride barrier layer 104
The top of gallium nitride channel layer 105, source electrode 101 and drain electrode 102 is arranged on to connect with the formation ohm of aluminum gallium nitride (AlGaN) barrier layer 104
Touch, grid 103 forms Schottky contacts with aluminum gallium nitride (AlGaN) barrier layer 104.But for common GaN HFET, when
When device bears pressure-resistant, since raceway groove two-dimensional electron gas between grid 103 and drain electrode 102 can not be completely depleted so that raceway groove
Electric field is concentrated mainly on 103 edge of grid, causes device just breakdown under relatively low drain voltage.At the same time from source electrode injection
Electronics can pass through GaN cushions and reach drain electrode 102, form leak channel, excessive cushion leakage current also results in
Device punctures in advance, can not give full play to the high voltage advantage of GaN material, so as to limit GaN HFET answering in terms of high pressure
With.
In the prior art in order to make electric field distribution between grid 103 and drain electrode 102 more uniform, suppression cushion leakage electricity
Stream, improves device electric breakdown strength, the following method of generally use：
Use surface field plate techniques [D.Vislalli et al., " Limitations of Field Plate Effect
Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs”,IEEE Trans.Electron
Devices,Vol.57,No.12,p.3333-3339(3060)].Field plate structure can effectively exhaust the raceway groove two dimension under it
Electron gas, the Two-dimensional electron depleted region between extended grid and drain electrode, is distributed the electric field between grid leak more uniform, so that
Achieve the purpose that to improve breakdown voltage.But field plate structure still can not completely depleted grid and drain electrode between raceway groove Two-dimensional electron
Gas, while cushion leakage current can not be suppressed, it is impossible to give full play to the pressure-resistant advantage of GaN material.
Impurity [Eldad Bahat-Treidel the et al., " AlGaN/GaN/GaN such as carbon, iron are mixed in cushion:C
Back-Barrier HFETs With Breakdown Voltage of Over 1kV and Low RON×A”,
Trans.on Electron Devices,Vol.57,No.11,p.3050-3058(3060)].The impurity such as carbon, iron can be in GaN
Deep energy level electron trap is introduced in cushion, is captured from source electrode injected electrons, is increased cushion resistance, be occupied by an electron at the same time
Trap help to exhaust two-dimensional electron gas in raceway groove, make device channel electric field distribution it is more uniform.But the technology cannot be complete
Two-dimensional electron gas in fully- depleted raceway groove, can not give full play to the pressure-resistant advantage of GaN material, while the impurity such as carbon, iron introduces
Deep Level Traps can cause conducting resistance increase, output current decline, current collapse effect and reaction speed decline etc. negative
Face is rung.
Way (the US 2006/0170003 for the in-vivo metal electrode being connected with back electrode is introduced directly into p-type Si substrates
A1).Though the technology is temporarily not implemented at present, from theory analysis, metal electrode is directly contacted with semiconductor to drop
Low-leakage current, conversely because of its good electric conductivity, it is easier to cushion electric leakage raceway groove is formed, so as to reduce the breakdown potential of device
Pressure.In addition, closer to the distance between the internal electrode and drain electrode, centre only exists PN junction structure, its reverse leakage is very big, if should
Internal electrode is connected with source electrode or grid, then the voltage endurance capability of whole device is only equivalent to common GaN PN junctions.More than removing
Outside the influence to breakdown voltage described in 2 points, which can not allow the N-type channel of higher concentration to adulterate to reduce electric conduction
Resistance, therefore, it is difficult to lift the figure of merit (FOM) of device.
The content of the invention
The shortcomings that the purpose of the present invention is overcoming current gallium nitride radical heterojunction field effect transistor pressure-resistant not high, there is provided one
Gallium nitride radical heterojunction field effect pipe of the kind with internal composite field plate structure.
The present invention solves its technical problem, and the technical solution of use is that have the gallium nitride base of internal composite field plate structure
Hetero junction field effect pipe, including substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source
Pole 101, drain electrode 102 and grid 103, the nitride buffer layer 106 are arranged on the top of substrate 107, it is characterised in that further include
Internal composite field plate structure, the composite field plate structure in vivo are made of electrode 208 and insulating medium layer 209, the electrode 208
Horizontal level be located at grid 103 and drain electrode 102 between, the lower surface of electrode 208 is in contact with device lower surface, dielectric
Layer 209 is covered in the other surfaces that electrode 208 is located in substrate 107, nitride buffer layer 106 and gallium nitride channel layer 105,
Thickness in the vertical direction of internal composite field plate structure is less than the upper surface to 107 lower surface of substrate of gallium nitride channel layer 105
Distance, electrode 208 be electrically connected mode for individually biasing be connected with source electrode 101 or be connected with grid 103 or with drain electrode
102 connections.
Specifically, the electrode 208 is made of metal or high doping semiconductor material.
Further, the insulating medium layer 209 is by silica and/or aluminium oxide and/or silicon nitride and/or hafnium oxide
Composition.
Specifically, the width of composite field plate structure in vivo in the horizontal direction is less than grid 103 between drain electrode 102
Distance.
Further, the electrode 208 is electrically connected mode as individually biasing or is connected with source electrode 101 or and grid
103 connections are connected with drain electrode 102.
Specifically, the gallium nitride channel layer 105 is n-type doping, doping concentration scope is 1 × 1014cm-3To 1 ×
1020cm-3。
Further, the nitride buffer layer 106 has N-type in insulating medium layer 209 close to the part of drain electrode 102
Doping concentration, its concentration range are 1 × 1014cm-3To 1 × 1020cm-3。
The invention has the advantages that pass through the above-mentioned gallium nitride radical heterojunction field effect with internal composite field plate structure
Pipe, it can be seen that it can reduce OFF state drain current, then by introducing insulating medium layer with blocking buffer layer leak channel
The possibility that device occurs to puncture in advance is reduced, and because the breakdown electric field of insulating medium layer is far above semi-conducting material, Ke Yicheng
A part of pressure-resistant, the introducing of the insulating medium layer is carried on a shoulder pole, the electric field that can also change between grid and drain electrode is distributed so that electric field is more
Add uniformly, increase is pressure-resistant, and increased composite field plate structure in vivo, can significantly modulate electric field distribution in channel, the electric field
The effect of modulating action depends on the structural parameters and location parameter of field plate in itself, than pervious surface field plate structure, more can
Depletion drift region electron concentration, resulting space-charge region can raise electric field, and increase is pressure-resistant, and can change resistance to pressure energy
This relation between power and conducting resistance, i.e., reduce conducting resistance by increasing raceway groove n-type doping concentration, while keeps even
Voltage endurance capability is improved, namely improves the figure of merit (FOM) of existing device.
Brief description of the drawings
Fig. 1 is the structure diagram of existing GaN HFET devices；
Fig. 2 is the structural representation of the gallium nitride radical heterojunction field effect pipe of the present invention with internal composite field plate structure
Figure；
Fig. 3 is device and device relation of drain current and drain bias in the case of grid is in OFF state in Fig. 2 in Fig. 1
Compare figure；
Fig. 4 is the comparison that device is distributed with device in Fig. 2 in the case of grid is in OFF state along the electric field of raceway groove in Fig. 1
Figure；
Wherein, 101 be source electrode, and 102 be drain electrode, and 103 be grid, and 104 be aluminum gallium nitride barrier layer, and 105 be gallium nitride raceway groove
Layer, 106 be nitride buffer layer, and 107 be substrate, and 208 be electrode, and 209 be insulating medium layer.
Embodiment
With reference to the accompanying drawings and embodiments, detailed description of the present invention technical solution.
The structure diagram of gallium nitride radical heterojunction field effect pipe of the present invention with internal composite field plate structure is such as
Shown in Fig. 2, it includes substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode
101st, drain electrode 102, grid 103 and internal composite field plate structure, wherein nitride buffer layer 106 are arranged on the top of substrate 107, nitrogen
Change gallium channel layer 105 and be arranged on the top of nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged in gallium nitride channel layer 105
Side, source electrode 101 and drain electrode 102 form Ohmic contact, grid 103 and aluminum gallium nitride with aluminum gallium nitride (AlGaN) barrier layer 104
(AlGaN) barrier layer 104 forms Schottky contacts, and internal composite field plate structure is made of electrode 208 and insulating medium layer 209,
The horizontal level of electrode 208 is located between grid 103 and drain electrode 102, and the lower surface of electrode 208 is in contact with device lower surface,
Insulating medium layer 209 is covered in its that electrode 208 is located in substrate 107, nitride buffer layer 106 and gallium nitride channel layer 105
On his surface, thickness in the vertical direction of internal composite field plate structure is less than the upper surface of gallium nitride channel layer 105 to substrate
The distance of 107 lower surfaces, electrode 208 are electrically connected mode individually to bias or being connected with source electrode 101 or be connected with grid 103
Or it is connected with drain electrode 102.
Embodiment
Referring to Fig. 1, for the structure diagram of existing GaN HFET devices, including substrate 107, gallium nitride (GaN) buffering
Layer 106, gallium nitride (GaN) channel layer 105, on aluminum gallium nitride (AlGaN) barrier layer 104 and aluminum gallium nitride (AlGaN) barrier layer 104
Source electrode 101, drain electrode 102 and the grid 103 of formation, wherein nitride buffer layer 106 are arranged on the top of substrate 107, gallium nitride ditch
Channel layer 105 is arranged on the top of nitride buffer layer 106, and aluminum gallium nitride barrier layer 104 is arranged on the top of gallium nitride channel layer 105, source
Pole 101 and drain electrode 102 form Ohmic contact, grid 103 and aluminum gallium nitride (AlGaN) potential barrier with aluminum gallium nitride (AlGaN) barrier layer 104
Layer 104 forms Schottky contacts.
Referring to Fig. 2, for the knot of the gallium nitride radical heterojunction field effect pipe of the present invention with internal composite field plate structure
Structure schematic diagram, it includes substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode
101st, drain electrode 102, grid 103 and internal composite field plate structure, wherein nitride buffer layer 106 are arranged on the top of substrate 107, nitrogen
Change gallium channel layer 105 and be arranged on the top of nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged in gallium nitride channel layer 105
Side, source electrode 101 and drain electrode 102 form Ohmic contact, grid 103 and aluminum gallium nitride with aluminum gallium nitride (AlGaN) barrier layer 104
(AlGaN) barrier layer 104 forms Schottky contacts, and internal composite field plate structure is made of electrode 208 and insulating medium layer 209,
The horizontal level of electrode 208 is located between grid 103 and drain electrode 102, and the lower surface of electrode 208 is in contact with device lower surface,
Insulating medium layer 209 is covered in its that electrode 208 is located in substrate 107, nitride buffer layer 106 and gallium nitride channel layer 105
On his surface, thickness in the vertical direction of internal composite field plate structure is less than the upper surface of gallium nitride channel layer 105 to substrate
The distance of 107 lower surfaces.
Wherein, electrode 208 can be made of metal or high doping semiconductor material, and insulating medium layer 209 can be by dioxy
SiClx and/or aluminium oxide and/or silicon nitride and/or hafnium oxide etc. form.The width of internal composite field plate structure in the horizontal direction
Degree is less than grid 103 to drain electrode the distance between 102.Electrode 208 is electrically connected mode individually to bias or connecting with source electrode 101
Connect or be connected with grid 103 or be connected with drain electrode 102.
Here, gallium nitride channel layer 105 can not be adulterated artificially, can also artificial n-type doping, if doping, adulterate dense
It is 1 × 10 to spend scope14cm-3To 1 × 1020cm-3.Nitride buffer layer 106 is in insulating medium layer 209 close to the part of drain electrode 102
Can be n-type doping concentration, its concentration range is 1 × 1014cm-3To 1 × 1020cm-3。
This example is with the GaN with internal composite field plate (being made of electrode 208 and insulating medium layer 209) shown in Fig. 2
Contrasts of the HFET in the case of 205 doped and undoped two kinds of channel layer with existing common GaN HEMT (Fig. 1)；Device architecture is joined
Number is referring to table 1.
1 device simulation structural parameters of table
It is that device drains 102 electric currents with draining with device in Fig. 2 in the case of grid is in OFF state in Fig. 1 referring to Fig. 3
The relations comparison chart of 102 biass；Device electric breakdown strength is defined as 102 electric currents of drain electrode when reaching 1mA/mm, what drain electrode 102 was applied
Bias voltage.Result is two Dimension Numerical Value emulation gained.In Fig. 3, dash line represents the cut-off state of common GaN HEMT devices
102 electric currents of lower drain electrode；Chain-dotted line is the electricity of drain electrode 202 under the cut-off state by the GaN HEMT of the internal composite field plate of band in this example
Stream, its raceway groove are undoped；Solid line represents to drain 202 under cut-off state by the GaN HEMT of the internal composite field plate of band in this example
Electric current, wherein raceway groove have n-type doping concentration 1 × 1017cm-3.As seen from the figure, internal composite field plate can greatly reduce device
Drain leakage current under cut-off state.In addition, in the case of having internal composite field plate, n-type doping is carried out to raceway groove, can
It is further to improve device voltage endurance capability, while reduce conducting resistance.
In order to further verify that the internal composite field plate structure being made of insulating medium layer 209 and electrode 208 hits device
The influence of voltage is worn, point of raceway groove electric field strength in transverse direction in following three situation by two Dimension Numerical Value simulation study
Cloth, is the comparison that device is distributed with device in Fig. 2 in the case of grid is in OFF state along the electric field of raceway groove in Fig. 1 referring to Fig. 4
Figure, with internal composite field plate raceway groove non-impurity-doped (Fig. 4 chain lines), with internal composite field plate and raceway groove n-type doping 1 × 1017cm-3(solid line in Fig. 4) and ordinary construction (Fig. 4 dashed lines).Two conclusions as can be drawn from Figure 4.First, internal Composite Field
Harden structure obviously changes the distribution of raceway groove electric field.Specifically, near the field plate of introducing, occur one in raceway groove
A peak electric field, reduces the electric field at 103 edge of grid so that electric field distribution in channel is more uniformly distributed, so as to improve raceway groove
Voltage endurance capability.Second, in the case of having channel doping, internal composite field plate can effectively exhaust the impurity of channel region, leave sky
Between charged region with lifting electric field strength, increase is pressure-resistant, it is even more important that while increasing pressure-resistant because doping,
So that device on-resistance reduces.Specifically, to there was only the situation of internal composite field plate, conducting resistance is 0.54m Ω
cm2；There is internal composite field plate and raceway groove has n-type doping concentration 1 × 1017cm-3Under situation, conducting resistance is 0.46m Ω
cm2。
The above, is only present pre-ferred embodiments, and limitation in any form, every foundation are not done to the present invention
Any simply modification, the equivalent variations made in the technical spirit of the present invention to above example, each fall within the protection of the present invention
Within the scope of.
Claims (7)
1. the gallium nitride radical heterojunction field effect pipe with internal composite field plate structure, including substrate 107, nitride buffer layer
106th, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101, drain electrode 102 and grid 103, the nitride buffer layer
106 are arranged on the top of substrate 107, it is characterised in that further include internal composite field plate structure, the composite field plate structure in vivo by
Electrode 208 and insulating medium layer 209 form, and the horizontal level of the electrode 208 is located between grid 103 and drain electrode 102, electrode
208 lower surface is in contact with device lower surface, and insulating medium layer 209 is covered in that electrode 208 is located at substrate 107, gallium nitride delays
Rush in the other surfaces in layer 106 and gallium nitride channel layer 105, the thickness in the vertical direction of internal composite field plate structure is less than
To the distance of 107 lower surface of substrate, the mode that is electrically connected of electrode 208 is individually biasing for the upper surface of gallium nitride channel layer 105
Or it is connected with source electrode 101 or is connected with grid 103 or is connected with drain electrode 102.
2. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists
In the electrode 208 is made of metal or high doping semiconductor material.
3. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists
In the insulating medium layer 209 is made of silica and/or aluminium oxide and/or silicon nitride and/or hafnium oxide.
4. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists
In the width of composite field plate structure in vivo in the horizontal direction is less than grid 103 to drain electrode the distance between 102.
5. there is the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1 or 2 or 3 or 4,
It is characterized in that, the electrode 208 is electrically connected mode individually to bias or being connected with source electrode 101 or be connected with grid 103
Or it is connected with drain electrode 102.
6. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists
In the gallium nitride channel layer 105 is n-type doping, and doping concentration scope is 1 × 1014cm-3To 1 × 1020cm-3。
7. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 6, its feature exists
In the nitride buffer layer 106 has n-type doping concentration, its concentration in insulating medium layer 209 close to the part of drain electrode 102
Scope is 1 × 1014cm-3To 1 × 1020cm-3。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410454183.4A CN104241351B (en) | 2014-09-05 | 2014-09-05 | Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410454183.4A CN104241351B (en) | 2014-09-05 | 2014-09-05 | Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104241351A CN104241351A (en) | 2014-12-24 |
| CN104241351B true CN104241351B (en) | 2018-04-20 |
Family
ID=52229113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410454183.4A Active CN104241351B (en) | 2014-09-05 | 2014-09-05 | Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104241351B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11508821B2 (en) * | 2017-05-12 | 2022-11-22 | Analog Devices, Inc. | Gallium nitride device for high frequency and high power applications |
| EP3818568A4 (en) | 2018-07-06 | 2022-08-03 | Analog Devices, Inc. | Compound device with back-side field plate |
| CN111129138B (en) * | 2018-11-01 | 2022-02-18 | 西安电子科技大学 | Gallium nitride enhanced vertical power transistor based on self-aligned field plate structure |
| CN111354789B (en) * | 2018-12-24 | 2023-11-07 | 苏州捷芯威半导体有限公司 | Semiconductor device and manufacturing method |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102820325A (en) * | 2012-09-05 | 2012-12-12 | 电子科技大学 | Gallium nitride-based hetero-junction field effect transistor with back electrode structure |
| CN103178108A (en) * | 2011-12-20 | 2013-06-26 | 英飞凌科技奥地利有限公司 | Compound semiconductor device with buried field plate |
| CN103681851A (en) * | 2012-09-12 | 2014-03-26 | 株式会社东芝 | Power semiconductor device |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4542912B2 (en) * | 2005-02-02 | 2010-09-15 | 株式会社東芝 | Nitrogen compound semiconductor device |
| EP1921669B1 (en) * | 2006-11-13 | 2015-09-02 | Cree, Inc. | GaN based HEMTs with buried field plates |
| JP2011060912A (en) * | 2009-09-08 | 2011-03-24 | Toshiba Corp | Semiconductor device |
-
2014
- 2014-09-05 CN CN201410454183.4A patent/CN104241351B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103178108A (en) * | 2011-12-20 | 2013-06-26 | 英飞凌科技奥地利有限公司 | Compound semiconductor device with buried field plate |
| CN102820325A (en) * | 2012-09-05 | 2012-12-12 | 电子科技大学 | Gallium nitride-based hetero-junction field effect transistor with back electrode structure |
| CN103681851A (en) * | 2012-09-12 | 2014-03-26 | 株式会社东芝 | Power semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104241351A (en) | 2014-12-24 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103890923B (en) | Semiconductor device | |
| CN102820325B (en) | Gallium nitride-based hetero-junction field effect transistor with back electrode structure | |
| CN103035706B (en) | A kind of vertical gallium nitride radical heterojunction field effect transistor with polarization doping current barrier layer | |
| EP2955757B1 (en) | Nitride power component and manufacturing method therefor | |
| CN105097911B (en) | A kind of HEMT device with junction semiconductor layer | |
| CN105261643B (en) | A kind of high-breakdown-voltage GaN base transistor with high electronic transfer rate | |
| CN106920844B (en) | A kind of RESURF HEMT device with N-type floating buried layer | |
| CN104538440B (en) | A kind of charged RESURF HEMT devices of cushion | |
| CN105140302B (en) | Charge compensation pressure-resistance structure vertical gallium nitride radical heterojunction field effect pipe | |
| CN102856373B (en) | High-electronic-mobility-rate transistor | |
| CN106298911B (en) | A kind of double junction gate gallium nitride heterojunction field-effect tube | |
| CN105870164B (en) | A kind of GaN base transistor with high electronic transfer rate | |
| CN104269433B (en) | Gallium-nitride-based enhancement type heterojunction field effect transistor with composite channel layer | |
| CN104241351B (en) | Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure | |
| CN103579326B (en) | A kind of GaN base transistor with high electronic transfer rate with series composite cushion | |
| CN104009076A (en) | AlGaN/GaN heterojunction field effect transistor | |
| CN104393040A (en) | HEMT device with charged media | |
| CN104347701A (en) | Field effect transistor with composite passivation-layer structure | |
| CN115668512A (en) | Semiconductor device with a plurality of semiconductor chips | |
| CN104409496A (en) | Gallium-nitride-based power heterojunction field effect transistor with local back barrier | |
| CN107393954A (en) | A kind of GaN hetero-junctions vertical field effect pipe | |
| CN104599957B (en) | Semiconductor devices and preparation method thereof | |
| CN104282735A (en) | Field effect transistor with anion injection passivation layer | |
| CN115548106A (en) | Enhancement mode GaN device with P type grid | |
| CN104167444A (en) | Gallium-nitride-based heterojunction field effect transistor with local cap layer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |