CN104241351B - Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure - Google Patents

Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure Download PDF

Info

Publication number
CN104241351B
CN104241351B CN201410454183.4A CN201410454183A CN104241351B CN 104241351 B CN104241351 B CN 104241351B CN 201410454183 A CN201410454183 A CN 201410454183A CN 104241351 B CN104241351 B CN 104241351B
Authority
CN
China
Prior art keywords
gallium nitride
plate
electrode
internal composite
grid
Prior art date
Application number
CN201410454183.4A
Other languages
Chinese (zh)
Other versions
CN104241351A (en
Inventor
杜江锋
陈南庭
潘沛霖
刘�东
于奇
Original Assignee
电子科技大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 电子科技大学 filed Critical 电子科技大学
Priority to CN201410454183.4A priority Critical patent/CN104241351B/en
Publication of CN104241351A publication Critical patent/CN104241351A/en
Application granted granted Critical
Publication of CN104241351B publication Critical patent/CN104241351B/en

Links

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/778Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof; Multistep manufacturing processes therefor
    • H01L29/40Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402Field plates
    • H01L29/407Recessed field plates, e.g. trench field plates, buried field plates

Abstract

The present invention relates to semiconductor technology.The present invention solves the problems, such as that existing gallium nitride radical heterojunction field effect transistor is not pressure-resistant high, there is provided a kind of gallium nitride radical heterojunction field effect pipe with internal composite field plate structure, its technical solution can be summarized as:Compared with existing common GaN HFET (gallium nitride radical heterojunction field effect transistor), the gallium nitride radical heterojunction field effect pipe with internal composite field plate structure of the present invention is also made of with internal composite field plate structure, the internal composite field plate structure electrode and insulating medium layer.The invention has the advantages that increase device is pressure-resistant, suitable for gallium nitride radical heterojunction field effect transistor.

Description

Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure

Technical field

The present invention relates to semiconductor technology, more particularly to gallium nitride (GaN) radical heterojunction field effect transistor strain N-channel Mos field effect transistor (NMOSFET).

Background technology

Gallium nitride (GaN) radical heterojunction field effect transistor (HFET) is with energy gap is big, critical breakdown electric field is high, electric The excellent specific properties such as sub- saturated velocity height, good heat conductivity, radioresistance and good chemical stability, while gallium nitride material can be with The two-dimensional electron gas hetero-junctions raceway groove with high concentration and high mobility is formed with materials such as aluminum gallium nitrides (AlGaN), therefore especially It is one of most potential transistor of applied power electronics suitable for high pressure, high-power and high temperature application.

Fig. 1 is common GaN HFET (gallium nitride radical heterojunction field effect transistor) structure diagram of the prior art, mainly Including substrate 107, gallium nitride (GaN) cushion 106, gallium nitride (GaN) channel layer 105, aluminum gallium nitride (AlGaN) barrier layer 104 And formed on aluminum gallium nitride (AlGaN) barrier layer 104 source electrode 101, drain electrode 102 and grid 103, wherein nitride buffer layer 106 are arranged on the top of substrate 107, and gallium nitride channel layer 105 is arranged on the top of nitride buffer layer 106, aluminum gallium nitride barrier layer 104 The top of gallium nitride channel layer 105, source electrode 101 and drain electrode 102 is arranged on to connect with the formation ohm of aluminum gallium nitride (AlGaN) barrier layer 104 Touch, grid 103 forms Schottky contacts with aluminum gallium nitride (AlGaN) barrier layer 104.But for common GaN HFET, when When device bears pressure-resistant, since raceway groove two-dimensional electron gas between grid 103 and drain electrode 102 can not be completely depleted so that raceway groove Electric field is concentrated mainly on 103 edge of grid, causes device just breakdown under relatively low drain voltage.At the same time from source electrode injection Electronics can pass through GaN cushions and reach drain electrode 102, form leak channel, excessive cushion leakage current also results in Device punctures in advance, can not give full play to the high voltage advantage of GaN material, so as to limit GaN HFET answering in terms of high pressure With.

In the prior art in order to make electric field distribution between grid 103 and drain electrode 102 more uniform, suppression cushion leakage electricity Stream, improves device electric breakdown strength, the following method of generally use:

Use surface field plate techniques [D.Vislalli et al., " Limitations of Field Plate Effect Due to the Silicon Substrate in AlGaN/GaN/AlGaN DHFETs”,IEEE Trans.Electron Devices,Vol.57,No.12,p.3333-3339(3060)].Field plate structure can effectively exhaust the raceway groove two dimension under it Electron gas, the Two-dimensional electron depleted region between extended grid and drain electrode, is distributed the electric field between grid leak more uniform, so that Achieve the purpose that to improve breakdown voltage.But field plate structure still can not completely depleted grid and drain electrode between raceway groove Two-dimensional electron Gas, while cushion leakage current can not be suppressed, it is impossible to give full play to the pressure-resistant advantage of GaN material.

Impurity [Eldad Bahat-Treidel the et al., " AlGaN/GaN/GaN such as carbon, iron are mixed in cushion:C Back-Barrier HFETs With Breakdown Voltage of Over 1kV and Low RON×A”, Trans.on Electron Devices,Vol.57,No.11,p.3050-3058(3060)].The impurity such as carbon, iron can be in GaN Deep energy level electron trap is introduced in cushion, is captured from source electrode injected electrons, is increased cushion resistance, be occupied by an electron at the same time Trap help to exhaust two-dimensional electron gas in raceway groove, make device channel electric field distribution it is more uniform.But the technology cannot be complete Two-dimensional electron gas in fully- depleted raceway groove, can not give full play to the pressure-resistant advantage of GaN material, while the impurity such as carbon, iron introduces Deep Level Traps can cause conducting resistance increase, output current decline, current collapse effect and reaction speed decline etc. negative Face is rung.

Way (the US 2006/0170003 for the in-vivo metal electrode being connected with back electrode is introduced directly into p-type Si substrates A1).Though the technology is temporarily not implemented at present, from theory analysis, metal electrode is directly contacted with semiconductor to drop Low-leakage current, conversely because of its good electric conductivity, it is easier to cushion electric leakage raceway groove is formed, so as to reduce the breakdown potential of device Pressure.In addition, closer to the distance between the internal electrode and drain electrode, centre only exists PN junction structure, its reverse leakage is very big, if should Internal electrode is connected with source electrode or grid, then the voltage endurance capability of whole device is only equivalent to common GaN PN junctions.More than removing Outside the influence to breakdown voltage described in 2 points, which can not allow the N-type channel of higher concentration to adulterate to reduce electric conduction Resistance, therefore, it is difficult to lift the figure of merit (FOM) of device.

The content of the invention

The shortcomings that the purpose of the present invention is overcoming current gallium nitride radical heterojunction field effect transistor pressure-resistant not high, there is provided one Gallium nitride radical heterojunction field effect pipe of the kind with internal composite field plate structure.

The present invention solves its technical problem, and the technical solution of use is that have the gallium nitride base of internal composite field plate structure Hetero junction field effect pipe, including substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source Pole 101, drain electrode 102 and grid 103, the nitride buffer layer 106 are arranged on the top of substrate 107, it is characterised in that further include Internal composite field plate structure, the composite field plate structure in vivo are made of electrode 208 and insulating medium layer 209, the electrode 208 Horizontal level be located at grid 103 and drain electrode 102 between, the lower surface of electrode 208 is in contact with device lower surface, dielectric Layer 209 is covered in the other surfaces that electrode 208 is located in substrate 107, nitride buffer layer 106 and gallium nitride channel layer 105, Thickness in the vertical direction of internal composite field plate structure is less than the upper surface to 107 lower surface of substrate of gallium nitride channel layer 105 Distance, electrode 208 be electrically connected mode for individually biasing be connected with source electrode 101 or be connected with grid 103 or with drain electrode 102 connections.

Specifically, the electrode 208 is made of metal or high doping semiconductor material.

Further, the insulating medium layer 209 is by silica and/or aluminium oxide and/or silicon nitride and/or hafnium oxide Composition.

Specifically, the width of composite field plate structure in vivo in the horizontal direction is less than grid 103 between drain electrode 102 Distance.

Further, the electrode 208 is electrically connected mode as individually biasing or is connected with source electrode 101 or and grid 103 connections are connected with drain electrode 102.

Specifically, the gallium nitride channel layer 105 is n-type doping, doping concentration scope is 1 × 1014cm-3To 1 × 1020cm-3

Further, the nitride buffer layer 106 has N-type in insulating medium layer 209 close to the part of drain electrode 102 Doping concentration, its concentration range are 1 × 1014cm-3To 1 × 1020cm-3

The invention has the advantages that pass through the above-mentioned gallium nitride radical heterojunction field effect with internal composite field plate structure Pipe, it can be seen that it can reduce OFF state drain current, then by introducing insulating medium layer with blocking buffer layer leak channel The possibility that device occurs to puncture in advance is reduced, and because the breakdown electric field of insulating medium layer is far above semi-conducting material, Ke Yicheng A part of pressure-resistant, the introducing of the insulating medium layer is carried on a shoulder pole, the electric field that can also change between grid and drain electrode is distributed so that electric field is more Add uniformly, increase is pressure-resistant, and increased composite field plate structure in vivo, can significantly modulate electric field distribution in channel, the electric field The effect of modulating action depends on the structural parameters and location parameter of field plate in itself, than pervious surface field plate structure, more can Depletion drift region electron concentration, resulting space-charge region can raise electric field, and increase is pressure-resistant, and can change resistance to pressure energy This relation between power and conducting resistance, i.e., reduce conducting resistance by increasing raceway groove n-type doping concentration, while keeps even Voltage endurance capability is improved, namely improves the figure of merit (FOM) of existing device.

Brief description of the drawings

Fig. 1 is the structure diagram of existing GaN HFET devices;

Fig. 2 is the structural representation of the gallium nitride radical heterojunction field effect pipe of the present invention with internal composite field plate structure Figure;

Fig. 3 is device and device relation of drain current and drain bias in the case of grid is in OFF state in Fig. 2 in Fig. 1 Compare figure;

Fig. 4 is the comparison that device is distributed with device in Fig. 2 in the case of grid is in OFF state along the electric field of raceway groove in Fig. 1 Figure;

Wherein, 101 be source electrode, and 102 be drain electrode, and 103 be grid, and 104 be aluminum gallium nitride barrier layer, and 105 be gallium nitride raceway groove Layer, 106 be nitride buffer layer, and 107 be substrate, and 208 be electrode, and 209 be insulating medium layer.

Embodiment

With reference to the accompanying drawings and embodiments, detailed description of the present invention technical solution.

The structure diagram of gallium nitride radical heterojunction field effect pipe of the present invention with internal composite field plate structure is such as Shown in Fig. 2, it includes substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101st, drain electrode 102, grid 103 and internal composite field plate structure, wherein nitride buffer layer 106 are arranged on the top of substrate 107, nitrogen Change gallium channel layer 105 and be arranged on the top of nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged in gallium nitride channel layer 105 Side, source electrode 101 and drain electrode 102 form Ohmic contact, grid 103 and aluminum gallium nitride with aluminum gallium nitride (AlGaN) barrier layer 104 (AlGaN) barrier layer 104 forms Schottky contacts, and internal composite field plate structure is made of electrode 208 and insulating medium layer 209, The horizontal level of electrode 208 is located between grid 103 and drain electrode 102, and the lower surface of electrode 208 is in contact with device lower surface, Insulating medium layer 209 is covered in its that electrode 208 is located in substrate 107, nitride buffer layer 106 and gallium nitride channel layer 105 On his surface, thickness in the vertical direction of internal composite field plate structure is less than the upper surface of gallium nitride channel layer 105 to substrate The distance of 107 lower surfaces, electrode 208 are electrically connected mode individually to bias or being connected with source electrode 101 or be connected with grid 103 Or it is connected with drain electrode 102.

Embodiment

Referring to Fig. 1, for the structure diagram of existing GaN HFET devices, including substrate 107, gallium nitride (GaN) buffering Layer 106, gallium nitride (GaN) channel layer 105, on aluminum gallium nitride (AlGaN) barrier layer 104 and aluminum gallium nitride (AlGaN) barrier layer 104 Source electrode 101, drain electrode 102 and the grid 103 of formation, wherein nitride buffer layer 106 are arranged on the top of substrate 107, gallium nitride ditch Channel layer 105 is arranged on the top of nitride buffer layer 106, and aluminum gallium nitride barrier layer 104 is arranged on the top of gallium nitride channel layer 105, source Pole 101 and drain electrode 102 form Ohmic contact, grid 103 and aluminum gallium nitride (AlGaN) potential barrier with aluminum gallium nitride (AlGaN) barrier layer 104 Layer 104 forms Schottky contacts.

Referring to Fig. 2, for the knot of the gallium nitride radical heterojunction field effect pipe of the present invention with internal composite field plate structure Structure schematic diagram, it includes substrate 107, nitride buffer layer 106, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101st, drain electrode 102, grid 103 and internal composite field plate structure, wherein nitride buffer layer 106 are arranged on the top of substrate 107, nitrogen Change gallium channel layer 105 and be arranged on the top of nitride buffer layer 106, aluminum gallium nitride barrier layer 104 is arranged in gallium nitride channel layer 105 Side, source electrode 101 and drain electrode 102 form Ohmic contact, grid 103 and aluminum gallium nitride with aluminum gallium nitride (AlGaN) barrier layer 104 (AlGaN) barrier layer 104 forms Schottky contacts, and internal composite field plate structure is made of electrode 208 and insulating medium layer 209, The horizontal level of electrode 208 is located between grid 103 and drain electrode 102, and the lower surface of electrode 208 is in contact with device lower surface, Insulating medium layer 209 is covered in its that electrode 208 is located in substrate 107, nitride buffer layer 106 and gallium nitride channel layer 105 On his surface, thickness in the vertical direction of internal composite field plate structure is less than the upper surface of gallium nitride channel layer 105 to substrate The distance of 107 lower surfaces.

Wherein, electrode 208 can be made of metal or high doping semiconductor material, and insulating medium layer 209 can be by dioxy SiClx and/or aluminium oxide and/or silicon nitride and/or hafnium oxide etc. form.The width of internal composite field plate structure in the horizontal direction Degree is less than grid 103 to drain electrode the distance between 102.Electrode 208 is electrically connected mode individually to bias or connecting with source electrode 101 Connect or be connected with grid 103 or be connected with drain electrode 102.

Here, gallium nitride channel layer 105 can not be adulterated artificially, can also artificial n-type doping, if doping, adulterate dense It is 1 × 10 to spend scope14cm-3To 1 × 1020cm-3.Nitride buffer layer 106 is in insulating medium layer 209 close to the part of drain electrode 102 Can be n-type doping concentration, its concentration range is 1 × 1014cm-3To 1 × 1020cm-3

This example is with the GaN with internal composite field plate (being made of electrode 208 and insulating medium layer 209) shown in Fig. 2 Contrasts of the HFET in the case of 205 doped and undoped two kinds of channel layer with existing common GaN HEMT (Fig. 1);Device architecture is joined Number is referring to table 1.

1 device simulation structural parameters of table

It is that device drains 102 electric currents with draining with device in Fig. 2 in the case of grid is in OFF state in Fig. 1 referring to Fig. 3 The relations comparison chart of 102 biass;Device electric breakdown strength is defined as 102 electric currents of drain electrode when reaching 1mA/mm, what drain electrode 102 was applied Bias voltage.Result is two Dimension Numerical Value emulation gained.In Fig. 3, dash line represents the cut-off state of common GaN HEMT devices 102 electric currents of lower drain electrode;Chain-dotted line is the electricity of drain electrode 202 under the cut-off state by the GaN HEMT of the internal composite field plate of band in this example Stream, its raceway groove are undoped;Solid line represents to drain 202 under cut-off state by the GaN HEMT of the internal composite field plate of band in this example Electric current, wherein raceway groove have n-type doping concentration 1 × 1017cm-3.As seen from the figure, internal composite field plate can greatly reduce device Drain leakage current under cut-off state.In addition, in the case of having internal composite field plate, n-type doping is carried out to raceway groove, can It is further to improve device voltage endurance capability, while reduce conducting resistance.

In order to further verify that the internal composite field plate structure being made of insulating medium layer 209 and electrode 208 hits device The influence of voltage is worn, point of raceway groove electric field strength in transverse direction in following three situation by two Dimension Numerical Value simulation study Cloth, is the comparison that device is distributed with device in Fig. 2 in the case of grid is in OFF state along the electric field of raceway groove in Fig. 1 referring to Fig. 4 Figure, with internal composite field plate raceway groove non-impurity-doped (Fig. 4 chain lines), with internal composite field plate and raceway groove n-type doping 1 × 1017cm-3(solid line in Fig. 4) and ordinary construction (Fig. 4 dashed lines).Two conclusions as can be drawn from Figure 4.First, internal Composite Field Harden structure obviously changes the distribution of raceway groove electric field.Specifically, near the field plate of introducing, occur one in raceway groove A peak electric field, reduces the electric field at 103 edge of grid so that electric field distribution in channel is more uniformly distributed, so as to improve raceway groove Voltage endurance capability.Second, in the case of having channel doping, internal composite field plate can effectively exhaust the impurity of channel region, leave sky Between charged region with lifting electric field strength, increase is pressure-resistant, it is even more important that while increasing pressure-resistant because doping, So that device on-resistance reduces.Specifically, to there was only the situation of internal composite field plate, conducting resistance is 0.54m Ω cm2;There is internal composite field plate and raceway groove has n-type doping concentration 1 × 1017cm-3Under situation, conducting resistance is 0.46m Ω cm2

The above, is only present pre-ferred embodiments, and limitation in any form, every foundation are not done to the present invention Any simply modification, the equivalent variations made in the technical spirit of the present invention to above example, each fall within the protection of the present invention Within the scope of.

Claims (7)

1. the gallium nitride radical heterojunction field effect pipe with internal composite field plate structure, including substrate 107, nitride buffer layer 106th, gallium nitride channel layer 105, aluminum gallium nitride barrier layer 104, source electrode 101, drain electrode 102 and grid 103, the nitride buffer layer 106 are arranged on the top of substrate 107, it is characterised in that further include internal composite field plate structure, the composite field plate structure in vivo by Electrode 208 and insulating medium layer 209 form, and the horizontal level of the electrode 208 is located between grid 103 and drain electrode 102, electrode 208 lower surface is in contact with device lower surface, and insulating medium layer 209 is covered in that electrode 208 is located at substrate 107, gallium nitride delays Rush in the other surfaces in layer 106 and gallium nitride channel layer 105, the thickness in the vertical direction of internal composite field plate structure is less than To the distance of 107 lower surface of substrate, the mode that is electrically connected of electrode 208 is individually biasing for the upper surface of gallium nitride channel layer 105 Or it is connected with source electrode 101 or is connected with grid 103 or is connected with drain electrode 102.
2. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists In the electrode 208 is made of metal or high doping semiconductor material.
3. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists In the insulating medium layer 209 is made of silica and/or aluminium oxide and/or silicon nitride and/or hafnium oxide.
4. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists In the width of composite field plate structure in vivo in the horizontal direction is less than grid 103 to drain electrode the distance between 102.
5. there is the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1 or 2 or 3 or 4, It is characterized in that, the electrode 208 is electrically connected mode individually to bias or being connected with source electrode 101 or be connected with grid 103 Or it is connected with drain electrode 102.
6. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 1, its feature exists In the gallium nitride channel layer 105 is n-type doping, and doping concentration scope is 1 × 1014cm-3To 1 × 1020cm-3
7. having the gallium nitride radical heterojunction field effect pipe of internal composite field plate structure according to claim 6, its feature exists In the nitride buffer layer 106 has n-type doping concentration, its concentration in insulating medium layer 209 close to the part of drain electrode 102 Scope is 1 × 1014cm-3To 1 × 1020cm-3
CN201410454183.4A 2014-09-05 2014-09-05 Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure CN104241351B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201410454183.4A CN104241351B (en) 2014-09-05 2014-09-05 Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201410454183.4A CN104241351B (en) 2014-09-05 2014-09-05 Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure

Publications (2)

Publication Number Publication Date
CN104241351A CN104241351A (en) 2014-12-24
CN104241351B true CN104241351B (en) 2018-04-20

Family

ID=52229113

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201410454183.4A CN104241351B (en) 2014-09-05 2014-09-05 Gallium nitride radical heterojunction field effect pipe with internal composite field plate structure

Country Status (1)

Country Link
CN (1) CN104241351B (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102820325A (en) * 2012-09-05 2012-12-12 电子科技大学 Gallium nitride-based hetero-junction field effect transistor with back electrode structure
CN103178108A (en) * 2011-12-20 2013-06-26 英飞凌科技奥地利有限公司 Compound semiconductor device with buried field plate
CN103681851A (en) * 2012-09-12 2014-03-26 株式会社东芝 Power semiconductor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4542912B2 (en) * 2005-02-02 2010-09-15 株式会社東芝 Nitrogen compound semiconductor device
EP1921669B1 (en) * 2006-11-13 2015-09-02 Cree, Inc. GaN based HEMTs with buried field plates
JP2011060912A (en) * 2009-09-08 2011-03-24 Toshiba Corp Semiconductor device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103178108A (en) * 2011-12-20 2013-06-26 英飞凌科技奥地利有限公司 Compound semiconductor device with buried field plate
CN102820325A (en) * 2012-09-05 2012-12-12 电子科技大学 Gallium nitride-based hetero-junction field effect transistor with back electrode structure
CN103681851A (en) * 2012-09-12 2014-03-26 株式会社东芝 Power semiconductor device

Also Published As

Publication number Publication date
CN104241351A (en) 2014-12-24

Similar Documents

Publication Publication Date Title
Shibata et al. 1.7 kV/1.0 mΩcm 2 normally-off vertical GaN transistor on GaN substrate with regrown p-GaN/AlGaN/GaN semipolar gate structure
Moens et al. An industrial process for 650V rated GaN-on-Si power devices using in-situ SiN as a gate dielectric
Hilt et al. Normally-off high-voltage p-GaN gate GaN HFET with carbon-doped buffer
DE112010004021B4 (en) Transistors with semiconductor interconnect layers and semiconductor channel layers of different semiconductor material
Nanjo et al. AlGaN channel HEMT with extremely high breakdown voltage
Kambayashi et al. Normally off n-channel GaN MOSFETs on Si substrates using an SAG technique and ion implantation
CN103383958B (en) A kind of RC-IGBT device and making method thereof
CN102403315B (en) Semiconductor device
JPWO2011162243A1 (en) Semiconductor elements, field effect transistors and diodes
CN104241260B (en) High-voltage cascade diode with HEMT and single-slice integrated semiconductor diode
US8492771B2 (en) Heterojunction semiconductor device and method
KR101722811B1 (en) Field effect transistor devices with low source resistance
US9472403B2 (en) Power semiconductor switch with plurality of trenches
US9947741B2 (en) Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active area
Huang et al. Enhancement-mode gan hybrid mos-hemts with r on, sp of 20 mω-cm 2
DE102011075601B4 (en) Semiconductor component with a triangle edge finish
JP3979788B2 (en) Silicon carbide devices
WO2013065243A1 (en) Semiconductor device and method for manufacturing same
JP2015041719A (en) Wide bandgap insulation gate type semiconductor apparatus
JP2006286910A (en) Semiconductor device and manufacturing method thereof
JP2007013058A (en) Semiconductor device
JP2005011846A (en) Semiconductor device
Umeda et al. Blocking-voltage boosting technology for GaN transistors by widening depletion layer in Si substrates
US9082815B2 (en) Semiconductor device having carrier extraction in electric field alleviating layer
Duan et al. New superjunction LDMOS with $ N $-type charges' compensation layer

Legal Events

Date Code Title Description
PB01 Publication
C06 Publication
SE01 Entry into force of request for substantive examination
C10 Entry into substantive examination
GR01 Patent grant
GR01 Patent grant