CN105261643B - A kind of high-breakdown-voltage GaN base transistor with high electronic transfer rate - Google Patents
A kind of high-breakdown-voltage GaN base transistor with high electronic transfer rate Download PDFInfo
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- CN105261643B CN105261643B CN201510608178.9A CN201510608178A CN105261643B CN 105261643 B CN105261643 B CN 105261643B CN 201510608178 A CN201510608178 A CN 201510608178A CN 105261643 B CN105261643 B CN 105261643B
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- 230000010287 polarization Effects 0.000 claims abstract description 72
- 238000005036 potential barrier Methods 0.000 claims abstract description 28
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 230000004888 barrier function Effects 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 abstract description 12
- 239000004047 hole gas Substances 0.000 abstract description 3
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 2
- 229910002601 GaN Inorganic materials 0.000 description 55
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 55
- 230000000694 effects Effects 0.000 description 13
- 239000000463 material Substances 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 230000005684 electric field Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 3
- 230000005527 interface trap Effects 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- 230000004913 activation Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- -1 aluminum gallium nitrides Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Junction Field-Effect Transistors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention relates to a kind of high-breakdown-voltage GaN base transistor with high electronic transfer rate, mainly it is made of successively substrate, AlN nucleating layers, GaN cushions, GaN channel layers, AlGaN potential barrier and the source electrode formed in AlGaN potential barrier, drain and gate from bottom to up, it is characterized in that, further include the Al of the Al content gradually variationals on AlGaN potential barrier, between grid and drain electrodexGa1‑xN polarization doped layers.AlxGa1‑xAl components in N polarization doped layers linearly increase from top to bottom, mutually compensated for by Al content gradually variationals and the three-dimensional hole gas produced with raceway groove two-dimensional electron gas, the super-junction structure of electric charge self-balancing is formed, charge unbalance is solved the problems, such as, improves device electric breakdown strength and stability.
Description
Technical field
The present invention relates to field of semiconductor devices, more particularly to a kind of high-breakdown-voltage gallium nitride based high electron mobility are brilliant
Body pipe.
Background technology
Gallium nitride (GaN) based high electron mobility transistor (HEMT) not only has that energy gap is big, critical breakdown electric field
The excellent specific property such as height, electron saturation velocities height, good heat conductivity, radioresistance and good chemical stability, while gallium nitride (GaN)
It is heterogeneous that material can also form the two-dimensional electron gas (2DEG) with high concentration and high mobility with materials such as aluminum gallium nitrides (AlGaN)
Tie raceway groove.Therefore, gallium nitride (GaN) based high electron mobility transistor is especially suitable for high pressure, high-power and high temperature application neck
Domain, is one of most potential transistor of applied power electronics.
But the breakdown voltage actual value for having made GaN device at present still has larger difference compared with the theoretical pressure-resistant limit
Away from.The problem of its main cause is gate electric field concentration effect existing for GaN base high electron mobility transistor is difficult to from basic
On effectively solved.When GaN HEMT are under high drain voltage, raceway groove power line, which is concentrated, is directed toward gate edge, on grid side
Edge forms peak electric field, and the uneven distribution of raceway groove electric field makes device that avalanche breakdown just occur compared with low drain pressure, can not be abundant
Play the high voltage advantage of GaN material.
2011, Nakajima et al. (GaN-based super heterojunction field effect
transistors using the polarization junction concept.IEEE Electron Device
Letters,2011,32(4):A kind of super hetero-junctions AlGaN/GaN HEMT devices 542-544) are proposed to solve grid electricity
Field concentration effect.The HEMT device structure as shown in Figure 1, sequentially consist of substrate, GaN cushions, GaN channel layers,
Grid, drain electrode and the source electrode formed in AlGaN potential barrier, and AlGaN potential barrier, device is between grid and drain electrode
It grown one layer of GaN layer and p-type GaN layer in AlGaN potential barrier.Due to the imbalance of GaN/AlGaN interfacial polarization electric charges,
GaN/AlGaN interfaces can form two-dimensional hole gas (2DHG), and 2DHG is mainly derived from the impurity ionization in p-type GaN layer.Work as device
When bearing pressure-resistant, 2DHG is mutually exhausted with 2DEG in raceway groove, extends raceway groove electric field region, smooth electric field distribution in channel, so as to carry
Rise device electric breakdown strength.
For GaN material, generally use magnesium (Mg) is adulterated to realize p-type GaN material, it is known that in GaN material n-type impurity,
Mg impurity has minimum activation energy (about 200meV), but still far above thermoelectrical potential (26meV) at room temperature.Excessive impurity
Activation can cause the activity ratio of n-type impurity at room temperature very low (being only 1% or so), and can drastically be dropped with the reduction of temperature
It is low, that is, produce " freeze-out effect ".Therefore, superjunction GaN HEMT devices are prepared using p-GaN, not only it is difficult to ensure that device electric charge is put down
Weighing apparatus, while device heat endurance can be influenced, limit the voltage endurance capability and application range of GaN device.
Since 2DEG is from the electric discharge of AlGaN potential barrier surface trap, 2DEG with 2DHG sources are different, simultaneously because p-type
There is " freeze-out effect " in GaN material, be difficult to accomplish charge balance between 2DEG and 2DHG, and the charge unbalance in superjunction is asked
Topic, can cause punch through voltage tends to saturation with the increase of grid leak spacing, can not give full play to the high voltage characteristic of GaN material.
In addition, " freeze-out effect " in p-type GaN material can also influence the heat endurance of device.Between GaN layer and AlGaN potential barrier by
It can cause current collapse effect in the interface trap that stress produces, reduce the reliability of device.
The content of the invention
The technical problems to be solved by the invention are to provide one kind for the above-mentioned prior art to avoid the occurrence of electric charge
The problem of uneven and heat endurance is poor, and the high-breakdown-voltage gallium nitride based high electron mobility of itself breakdown voltage can be lifted
Transistor.
Technical solution is used by the present invention solves above-mentioned technical problem：A kind of high electronics of high-breakdown-voltage gallium nitride base
Mobility transistor, from bottom to up successively mainly by substrate, AlN nucleating layers, GaN cushions, GaN channel layers, AlGaN potential barrier
And source electrode, the drain and gate composition formed in AlGaN potential barrier, it is characterised in that further include positioned at AlGaN potential barrier
On, the Al of Al content gradually variationals between grid and drain electrodexGa1-xN polarization doped layers.
Further, the AlxGa1-xThe thickness of N polarization doped layers is between 50nm~500nm.
Further, the AlxGa1-xThe upper surface Al components of N polarization doped layers are 0, AlxGa1-xN polarization doped layers
Lower surface Al components are identical with AlGaN potential barrier component, from top to bottom linear increase.
In order to avoid drain and gate passes through AlxGa1-xN polarization doped layers directly turn on, the AlxGa1-xN polarization doping
Layer is connected with drain electrode, AlxGa1-xN polarizes mutually isolated by dielectric between doped layer and grid；Or the AlxGa1-xN
Polarization doped layer is connected with grid, AlxGa1-xN polarizes mutually isolated by dielectric between doped layer and drain electrode；Or institute
State AlxGa1-xN polarization doped layer is mutually isolated by dielectric with grid, drain electrode respectively.
Further, the dielectric is high K medium, and the relative dielectric constant of high K medium is more than 15, and the insulation is situated between
Matter width is between 50nm~3 μm.
In order to avoid AlxGa1-xThe current potential floating that N polarization doped layers occur, more preferable control device characteristic are described
AlxGa1-xBeing prepared on N polarization doped layers has metal electrode.Wherein, the metal electrode and AlxGa1-xShape between N polarization doped layers
Into Schottky contacts or Ohmic contact.
Further, the bias voltage of the metal electrode is between gate bias voltage, drain bias voltage.
Compared with prior art, the advantage of the invention is that：In AlxGa1-xIn N polarization doped layers, Al components are from top to bottom
Gradually increase, therefore AlxGa1-xSince the polarization charge densities that piezoelectricity and spontaneous polarization produces are also in N polarization doped layers
Along vertical direction change.Since polarization charge is uneven, AlxGa1-xHigh concentration three-dimensional space can be formed in N polarization doped layers
Cave gas (3DHG).Due to AlxGa1-xN polarization doped layers lower surface Al components are identical with AlGaN potential barrier, and interface will not be formed
Interface trap, device channel 2DEG are not from AlGaN potential barrier surface trap.Al at the same timexGa1-xIn N polarization doped layers
3DHG can shield AlxGa1-xInfluence of the N polarization doped layer surface traps to raceway groove 2DEG, raceway groove 2DEG is nor derive from
AlxGa1-xN polarization doped layer surface trap electric discharges, and it is derived from AlxGa1-x3DHG in N polarization doped layers.According to electroneutral
Principle, AlxGa1-x3DHG is equal with raceway groove 2DEG amount of charge in N polarization doped layers, forms the super-junction structure of electric charge self-balancing,
It can effectively solve the problems, such as that breakdown voltage is too low caused by charge unbalance in existing superjunction GaN HEMT；At the same time
AlxGa1-x" freeze-out effect " is not present in 3DHG in N polarization doped layers, and device has more preferable heat endurance.Further, since
AlxGa1-xN polarization doped layers are identical with AlGaN potential barrier interface Al components, and interface does not have crystal lattice stress, will not form boundary
Face trap；3DHG effectively shields Al at the same timexGa1-xInfluence of the N polarization doped layer surface trap discharge and recharges to raceway groove 2DEG, can
Effectively to suppress current collapse effect, make device that there is the reliability of higher.
Brief description of the drawings
Fig. 1 is the superjunction GaN HEMT structure schematic diagrames of prior art；
Fig. 2 is the GaN HEMT structure schematic diagrames in the embodiment of the present invention；
Fig. 3 is band structure comparison schematic diagram when GaN HEMT shown in Fig. 1 whether there is surface trap；
Fig. 4 is band structure comparison schematic diagram when GaN HEMT whether there is surface trap in the embodiment of the present invention；
Fig. 5 is the GaN HEMT structure schematic diagrames corresponding to corrective measure one in the embodiment of the present invention；
Fig. 6 is the GaN HEMT structure schematic diagrames corresponding to corrective measure two in the embodiment of the present invention；
Fig. 7 is the GaN HEMT structure schematic diagrames corresponding to corrective measure three in the embodiment of the present invention；
Fig. 8 is the HEMT of superjunction GaN shown in Fig. 1 with breakdown voltage in GaN HEMT in the present invention as grid leak spacing changes
Schematic diagram.
Wherein, the corresponding parts title of reference numeral is in figure：
101- substrates, 102-AlN nucleating layers, 103-GaN cushions, 104-GaN channel layers, 105-AlGaN potential barriers
Layer, 106- source electrodes, 107- drain electrodes, 108- grids, 109-AlxGa1-xN polarization doped layers, 110- grids and AlxGa1-xN poles
Change the dielectric between doped layer, 111- drain electrodes and AlxGa1-xDielectric between N polarization doped layers, 112- metals
Electrode.
Embodiment
The present invention is described in further detail below in conjunction with attached drawing embodiment.
As shown in Fig. 2, the high-breakdown-voltage GaN base transistor with high electronic transfer rate in the present embodiment, from bottom to up according to
It is secondary mainly by substrate 101, AlN nucleating layers 102, GaN cushions 103, GaN channel layers 104, AlGaN potential barrier 105, Yi Ji
Source electrode 106, drain electrode 107 and the grid 108 formed in AlGaN potential barrier 105 forms, high as improvements, the gallium nitride base
Electron mobility transistor is further included on AlGaN potential barrier 105, grid 108 and drain electrode 107 between formed with Al components
The Al of gradual changexGa1-xN polarization doped layers 109.
Al in the present embodimentxGa1-xThe thickness of N polarization doped layers 109 is between 50nm~500nm, AlxGa1-xN polarizes
The Al components of 109 upper surface of doped layer are 0, its lower surface Al components are identical with AlGaN potential barrier 105, and linear from top to bottom
Increase.
As seen from Figure 3, for traditional GaN HEMT, when AlGaN potential barrier 105 does not have surface trap, AlGaN gesture
Barrier layer 105 and 104 interface conduction band bottom of GaN channel layers are higher than fermi level, can not form 2DEG, this explanation tradition GaN HEMT
Raceway groove 2DEG from AlGaN potential barrier 105 surface trap discharge.
As seen from Figure 4, no matter AlxGa1-x109 surface of N polarization doped layers whether there is surface trap, AlGaN potential barrier
105 and GaN channel layers, 104 interface can form 2DEG, and the 2DEG of this explanation HEMT device is not originating from surface trap electric discharge,
And come from AlxGa1-xThe 3DHG produced in N polarization doped layers 109 by polarization charge imbalance.According to elrectroneutrality pcharge-neutrality principle,
3DHG is equal with 2DEG surface density of charge, the two forms the super-junction structure of electric charge self-balancing.When device bears pressure-resistant, 3DHG and
2DEG is mutually completely depleted, extended device raceway groove depleted region, and lifting device is pressure-resistant.
Due to AlxGa1-xN polarization 109 lower surface Al components of doped layer are identical with the Al components of AlGaN potential barrier 105, because
This is in AlxGa1-xN polarization doped layer 109, the interface of AlGaN potential barrier 105 will not form interface trap.In addition, AlxGa1-xN
High concentration 3DHG in polarization doped layer 109 can effectively shield AlxGa1-xN polarization 109 surface trap discharge and recharges pair of doped layer
The influence of raceway groove 2DEG, so that the current collapse effect of suppression device, lifts device reliability.
In order to avoid drain electrode 107 and grid 108 pass through AlxGa1-xN polarization doped layers 109 directly turn on, as an improvement, can
To take following three kinds of measures：(corrective measure one) AlxGa1-xN polarization doped layers 109 are connected with drain electrode 107, AlxGa1-xN polarizes
It is mutually isolated by dielectric 110 between doped layer 109 and grid 108, as shown in Figure 5；(corrective measure two) AlxGa1-xN
Polarization doped layer 10 is connected with grid 108, and AlxGa1-xN polarizes passes through dielectric 111 between doped layer 10 and drain electrode 107
It is mutually isolated, as shown in Figure 6；(corrective measure three) AlxGa1-xN polarization doped layers 109 pass through respectively with grid 108, drain electrode 107
Dielectric 110, dielectric 111 are mutually isolated, as shown in Figure 7.Wherein, the dielectric 110 in the present embodiment and insulation
Medium 111 is high K medium, and relative dielectric constant is more than 15, and width is between 50nm~3 μm.
On the basis of using corrective measure three, in order to avoid AlxGa1-xThe current potential floating that N polarization doped layers 109 occur, more
Good control device characteristic, in AlxGa1-xBeing prepared on N polarization doped layers 109 has metal electrode 112.It is shown in Figure 7.Metal
Electrode 112 and AlxGa1-xCan be Schottky contacts or Ohmic contact between N polarization doped layers 109.Wherein, metal
The bias voltage of electrode 112 is between 107 bias voltages of 108 bias voltage of grid and drain electrode.
Change comparable situation with grid leak spacing by GaN HEMT breakdown voltages in superjunction GaN HEMT in Fig. 8 and the present embodiment
As can be seen that the superjunction GaN HEMT of prior art, due to charge unbalance effect, device electric breakdown strength is with grid leak spacing
Saturation trend is presented in increase, and which has limited the voltage endurance capability and application range of GaN device；And GaN provided in this embodiment
HEMT, due to AlxGa1-x3DHG and raceway groove 2DEG in N polarization doped layers 109 forms the super-junction structure of electric charge self-balancing, breakdown
Voltage constantly increases with the increase of grid leak spacing, has given full play to the high voltage advantage of GaN material, has improved the height of device
Voltage endurance capability.
To sum up know, in AlxGa1-xIn N polarization doped layers 109, Al components gradually increase from top to bottom, therefore AlxGa1-xN poles
Change in doped layer 109 since the polarization charge densities that piezoelectricity and spontaneous polarization produces are also to change along vertical direction.
Since polarization charge is uneven, AlxGa1-xHigh concentration three-dimensional hole gas (3DHG), the 3DHG can be formed in N polarization doped layers 109
Al can be shieldedxGa1-xInfluence of N polarization 109 surface traps of doped layer to raceway groove 2DEG, wherein raceway groove 2DEG are not originating from
AlxGa1-xN polarization doped layer 109 surface trap electric discharges, and it is derived from AlxGa1-x3DHG in N polarization doped layers 109.According to
Elrectroneutrality pcharge-neutrality principle, AlxGa1-x3DHG is equal with raceway groove 2DEG amount of charge in N polarization doped layers 109, forms electric charge self-balancing
Super-junction structure, so as to effectively solve the problems, such as that breakdown voltage is too low caused by charge unbalance；Al at the same timexGa1-xN polarization is mixed
" freeze-out effect " is not present in 3DHG in diamicton 109, and device has more preferable heat endurance.In addition, AlxGa1-xN polarization doping
3DHG in layer 109 effectively shields AlxGa1-xShadow of the N polarization 109 surface trap discharge and recharges of doped layer to raceway groove 2DEG concentration
Ring, so as to can inhibit current collapse effect, lift device reliability.
Claims (7)
1. a kind of high-breakdown-voltage GaN base transistor with high electronic transfer rate, from bottom to up successively mainly by substrate (101),
AlN nucleating layers (102), GaN cushions (103), GaN channel layers (104), AlGaN potential barrier (105) and in AlGaN potential barriers
Source electrode (106), drain electrode (107) and grid (108) composition formed on layer (105), it is characterised in that further include positioned at AlGaN
The Al of Al content gradually variationals on barrier layer (105), between grid (108) and drain electrode (107)xGa1-xN polarization doped layers
(109)；The AlxGa1-xThe upper surface Al components of N polarization doped layers (109) are 0, AlxGa1-xUnder N polarization doped layers (109)
Surface A l components are identical with AlGaN potential barrier (105) component, from top to bottom linear increase.
2. high-breakdown-voltage GaN base transistor with high electronic transfer rate according to claim 1, it is characterised in that described
AlxGa1-xThe thickness of N polarization doped layers (109) is between 50nm~500nm.
3. high-breakdown-voltage GaN base transistor with high electronic transfer rate according to claim 1, it is characterised in that described
AlxGa1-xN polarization doped layers (109) are connected with drain electrode (107), AlxGa1-xBetween N polarization doped layers (109) and grid (108)
It is mutually isolated by dielectric.
4. high-breakdown-voltage GaN base transistor with high electronic transfer rate according to claim 1, it is characterised in that described
AlxGa1-xN polarization doped layers (109) are connected with grid (108), AlxGa1-xBetween N polarization doped layers (109) and drain electrode (107)
It is mutually isolated by dielectric.
5. high-breakdown-voltage GaN base transistor with high electronic transfer rate according to claim 1, it is characterised in that described
AlxGa1-xN polarization doped layers (109) are mutually isolated by dielectric with grid (108), drain electrode (107) respectively；It is described
AlxGa1-xBeing prepared on N polarization doped layers (109) has metal electrode (112)；The bias voltage of the metal electrode (112) between
Between grid (108) bias voltage, drain electrode (107) bias voltage.
6. high-breakdown-voltage GaN base transistor with high electronic transfer rate according to claim 5, it is characterised in that described
Dielectric is high K medium, and the relative dielectric constant of high K medium is more than 15, the dielectric width be in 50nm~3 μm it
Between.
7. high-breakdown-voltage GaN base transistor with high electronic transfer rate according to claim 6, it is characterised in that described
Metal electrode (112) and AlxGa1-xSchottky contacts or Ohmic contact are formed between N polarization doped layers (109).
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| CN105931964A (en) * | 2016-05-13 | 2016-09-07 | 中国科学院半导体研究所 | Enhanced-type AlGaN/GaN transistor preparation method |
| CN106876443A (en) * | 2017-03-03 | 2017-06-20 | 上海新傲科技股份有限公司 | GaN high electron mobility transistor of high-breakdown-voltage and forming method thereof |
| IT201700064155A1 (en) * | 2017-06-09 | 2018-12-09 | St Microelectronics Srl | HEMT TRANSISTOR WITH HIGH STRESS RESISTANCE IN THE STATE OFF AND RELATIVE MANUFACTURING METHOD |
| CN108447787A (en) * | 2018-03-20 | 2018-08-24 | 重庆大学 | A kind of transverse direction super-junction structure gallium nitride HEMT device and its manufacturing method |
| CN110047924B (en) * | 2018-12-20 | 2022-07-29 | 泉州三安半导体科技有限公司 | High-resistance buffer layer using GaN-based narrow-well multi-quantum-well structure and preparation method thereof |
| CN113571516B (en) * | 2020-04-29 | 2024-02-06 | 广东致能科技有限公司 | III-nitride semiconductor integrated circuit structure, manufacturing method and application thereof |
| CN113555429B (en) * | 2021-07-06 | 2024-01-19 | 华南师范大学 | Normally open HFET device with high breakdown voltage and low on-resistance and method of making same |
| CN113594243A (en) * | 2021-07-21 | 2021-11-02 | 电子科技大学 | Gradient polarization doped enhanced GaN longitudinal field effect transistor |
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| CN101107713A (en) * | 2004-11-23 | 2008-01-16 | 克里公司 | Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same |
| CN104269434A (en) * | 2014-09-19 | 2015-01-07 | 苏州捷芯威半导体有限公司 | Transistor with high electronic mobility |
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| US20130175544A1 (en) * | 2010-11-10 | 2013-07-11 | Mitsubishi Electric Corporation | Semiconductor device, and method of manufacturing semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101107713A (en) * | 2004-11-23 | 2008-01-16 | 克里公司 | Cap layers and/or passivation layers for nitride-based transistors, transistor structures and methods of fabricating same |
| CN104269434A (en) * | 2014-09-19 | 2015-01-07 | 苏州捷芯威半导体有限公司 | Transistor with high electronic mobility |
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