CN103594508A - Gallium nitride high electron mobility transistor of grid single field plate - Google Patents
Gallium nitride high electron mobility transistor of grid single field plate Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 118
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 89
- 229910052751 metal Inorganic materials 0.000 claims abstract description 76
- 239000002184 metal Substances 0.000 claims abstract description 76
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 43
- 230000004888 barrier function Effects 0.000 claims abstract description 40
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 26
- 239000000758 substrate Substances 0.000 claims description 18
- 239000011248 coating agent Substances 0.000 claims description 17
- 238000000576 coating method Methods 0.000 claims description 17
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 13
- 239000010931 gold Substances 0.000 claims description 13
- 229910052737 gold Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 11
- 229910052733 gallium Chemical group 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical group [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 230000005684 electric field Effects 0.000 abstract description 5
- 230000015556 catabolic process Effects 0.000 abstract description 3
- 238000000034 method Methods 0.000 abstract description 2
- 238000004377 microelectronic Methods 0.000 abstract 1
- 239000000463 material Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/402—Field plates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/495—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a simple metal, e.g. W, Mo
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7782—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET
- H01L29/7783—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with confinement of carriers by at least two heterojunctions, e.g. DHHEMT, quantum well HEMT, DHMODFET using III-V semiconductor material
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
The invention relates to the micro electronic technique, and provides a gallium nitride high electron mobility transistor of a grid single field plate. The gallium nitride high electron mobility transistor of the grid single field plate solves the problem that a channel electric field of an existing AlGaN/GaN high electron mobility transistor is uneven in distribution. According to the technical scheme, compared with the prior art, the gallium nitride high electron mobility transistor of the grid single field plate comprises an AlGaN first barrier layer and an AlGaN second barrier layer as the barrier layers, a gallium nitride covering layer and a silicon nitride passivation layer are further arranged on the gallium nitride high electron mobility transistor of the grid single field plate, source electrode metal, drain electrode metal and grid electrode metal are arranged on the gallium nitride covering layer, the silicon nitride passivation layer is arranged on the gallium nitride covering layer and between the source electrode metal and the grid electrode metal and between the grid electrode metal and the drain electrode metal, and the grid single field plate is arranged at the position, close to the grid electrode metal, of the silicon nitride passivation layer between the grid electrode metal and the drain electrode metal. The gallium nitride high electron mobility transistor of the grid single field plate has the advantages that a breakdown voltage is higher, output power is improved, and the gallium nitride high electron mobility transistor of the grid single field plate is suitable for the high electron mobility transistors.
Description
Technical field
The present invention relates to microelectric technique, particularly the technology of GaN high electron mobility transistor.
Background technology
Gallium nitride (GaN) is compared and is had better electric property with second generation semi-conducting material with the first generation, it is a kind of wide bandgap semiconductor materials, there are high breakdown field strength, high saturated velocity and high thermal stability etc., premium properties makes it obtain people's very big concern and research, wherein research is AlGaN/GaN (aluminium gallium nitride alloy/gallium nitride) High Electron Mobility Transistor (HEMT) the most widely, is applicable to microwave high power device.
AlGaN/GaN High Electron Mobility Transistor is a kind of HFET, it is to utilize to have the very two-dimensional electron gas of high mobility (2-DEG) work, its structural representation as shown in Figure 1, comprise substrate, gallium nitride nucleating layer, gallium nitride resilient coating, gallium nitride channel layer and AlGaN/GaN barrier layer, gallium nitride nucleating layer is arranged on substrate, gallium nitride resilient coating is arranged on gallium nitride nucleating layer, gallium nitride channel layer is arranged on gallium nitride resilient coating, AlGaN/GaN barrier layer is arranged on gallium nitride channel layer, on AlGaN/GaN barrier layer, be also provided with source metal, drain metal and gate metal.The power characteristic of HEMT is the emphasis that is applied to high power device, in order to improve the power output of HEMT, just need to improve puncture voltage, and grid electric field concentration effect causes device to puncture in advance, when GaN HEMT is under high drain-source bias voltage, raceway groove power line is concentrated and is pointed to gate edge, at gate edge, forms peak electric field, the uneven distribution of raceway groove electric field makes device depress avalanche breakdown just occurs in lower leakage, thereby cannot give full play to the withstand voltage advantage of height of GaN material.
Summary of the invention
The object of the invention is to overcome the inhomogeneous problem of current AlGaN/GaN High Electron Mobility Transistor electric field distribution in channel, a kind of GaN high electron mobility transistor of grid single game plate is provided.
The present invention solves its technical problem, the technical scheme adopting is, a kind of GaN high electron mobility transistor of grid single game plate, comprise substrate, it is characterized in that, also comprise gallium nitride nucleating layer, gallium nitride resilient coating, gallium nitride channel layer, AlGaN the first barrier layer, AlGaN the second barrier layer, gallium nitride block layer and silicon nitride passivation, described gallium nitride nucleating layer is arranged on substrate, gallium nitride resilient coating is arranged on gallium nitride nucleating layer, gallium nitride channel layer is arranged on gallium nitride resilient coating, AlGaN the first barrier layer is arranged on gallium nitride channel layer, AlGaN the second barrier layer is arranged on AlGaN the first barrier layer, gallium nitride block layer is arranged on AlGaN the second barrier layer, on gallium nitride block layer, be provided with source metal, drain metal and gate metal, silicon nitride passivation is arranged on gallium nitride block layer, between source metal and gate metal, and between gate metal and drain metal, on silicon nitride passivation between described gate metal and drain metal, near gate metal position, be provided with grid single game plate.
Concrete, substrate is silicon carbide substrates.
Further, in described AlGaN the first barrier layer, the atomic ratio of Al atom and Ga atom is 0.6:0.4; In described AlGaN the second barrier layer, the atomic ratio of Al atom and Ga atom is 0.27:0.73.
Concrete, the thickness of described substrate is 10nm, the thickness of gallium nitride nucleating layer is 20nm, the thickness of gallium nitride resilient coating is 2 μ m, the thickness of gallium nitride channel layer is 12nm, and the thickness of AlGaN the first barrier layer is 10nm, and the thickness of AlGaN the second barrier layer is 10nm, the thickness of gallium nitride block layer is 3nm, and the thickness of silicon nitride passivation is 200nm.
Further, described gate metal is that nickel and gold are made, gate metal and gallium nitride block layer form Schottky contacts, and source metal and drain metal are made by antimony, aluminium, nickel and gold from the bottom up, and source metal and drain metal and gallium nitride block layer form ohmic contact.
Concrete, described grid single game plate is nickel or gold, length is 2 μ m.
Further, when grid single game plate is nickel, its thickness is 20nm, and when grid single game plate is gold, its thickness is 200nm.
The invention has the beneficial effects as follows, in the present invention program, the GaN high electron mobility transistor of above-mentioned a kind of grid single game plate, compared to existing GaN high electron mobility transistor, its puncture voltage is larger, has improved power output, and performance is more excellent.
Accompanying drawing explanation
Fig. 1 is the structural representation of existing GaN high electron mobility transistor;
Fig. 2 is the structural representation of the GaN high electron mobility transistor of a kind of grid single game plate of the present invention;
Fig. 3 is that the GaN high electron mobility transistor puncture voltage of a kind of grid single game plate in the embodiment of the present invention is with the change curve of grid single game plate length;
Fig. 4 is that the GaN high electron mobility transistor puncture voltage of a kind of grid single game plate in the embodiment of the present invention is with the change curve of silicon nitride passivation layer thickness.
Embodiment
Below in conjunction with embodiment and accompanying drawing, describe technical scheme of the present invention in detail.
The GaN high electron mobility transistor of a kind of grid single game plate of the present invention is by substrate, gallium nitride nucleating layer, gallium nitride resilient coating, gallium nitride channel layer, AlGaN the first barrier layer, AlGaN the second barrier layer, gallium nitride block layer, source metal, drain metal, gate metal and silicon nitride passivation form, wherein, gallium nitride nucleating layer is arranged on substrate, gallium nitride resilient coating is arranged on gallium nitride nucleating layer, gallium nitride channel layer is arranged on gallium nitride resilient coating, AlGaN the first barrier layer is arranged on gallium nitride channel layer, AlGaN the second barrier layer is arranged on AlGaN the first barrier layer, gallium nitride block layer is arranged on AlGaN the second barrier layer, on gallium nitride block layer, be provided with source metal, drain metal and gate metal, silicon nitride passivation is arranged on gallium nitride block layer, between source metal and gate metal, and between gate metal and drain metal, on silicon nitride passivation between gate metal and drain metal, near gate metal position, be provided with grid single game plate.
Embodiment
In the GaN high electron mobility transistor of a kind of grid single game plate of this example, the thickness of substrate is 10nm, the thickness of gallium nitride nucleating layer is 20nm, the thickness of gallium nitride resilient coating is 2 μ m, and the thickness of gallium nitride channel layer is 12nm, and the thickness of AlGaN the first barrier layer is 10nm, the thickness of AlGaN the second barrier layer is 10nm, the thickness of gallium nitride block layer is 3nm, and the thickness of silicon nitride passivation is 200nm, and its structural representation as shown in Figure 2.
Be specially: gallium nitride nucleating layer is arranged on substrate, gallium nitride resilient coating is arranged on gallium nitride nucleating layer, gallium nitride channel layer is arranged on gallium nitride resilient coating, AlGaN the first barrier layer is arranged on gallium nitride channel layer, AlGaN the second barrier layer is arranged on AlGaN the first barrier layer, gallium nitride block layer is arranged on AlGaN the second barrier layer, on gallium nitride block layer, be provided with source metal, drain metal and gate metal, silicon nitride passivation is arranged on gallium nitride block layer, between source metal and gate metal, and between gate metal and drain metal.
Wherein, in AlGaN the first barrier layer, the atomic ratio of Al atom and Ga atom is 0.6:0.4, and in AlGaN the second barrier layer, the atomic ratio of Al atom and Ga atom is 0.27:0.73; Substrate is silicon carbide substrates; Gate metal can be made for nickel and gold, gate metal and gallium nitride block layer form Schottky contacts, source metal and drain metal can be made by antimony, aluminium, nickel and gold from the bottom up, be antimony layer contacts with gallium nitride block layer below, it on it, is aluminium lamination, again, being nickel dam, is finally that gold layer forms complete source metal and drain metal, and source metal and drain metal and gallium nitride block layer form ohmic contact; On silicon nitride passivation between gate metal and drain metal, near gate metal position, be provided with grid single game plate, grid single game plate can be nickel or gold, and length is 2 μ m, when grid single game plate is nickel, its thickness is 20nm, and when grid single game plate is gold, its thickness is 200nm.
Its puncture voltage with the change curve of grid single game plate length as Fig. 3, visible: when grid single game plate length is 0 μ m, the puncture voltage of device is very low; Along with grid single game plate length increases, the puncture voltage of device almost increases with field plate length is linear, when grid single game plate length is 2 μ m after, the puncture voltage of device remains unchanged substantially.Its puncture voltage with the change curve of silicon nitride passivation layer thickness as Fig. 4, visible: along with the increase of silicon nitride passivation layer thickness, the variation of the puncture voltage of device is first increases and then decreases, and when silicon nitride passivation layer thickness is 50nm, puncture voltage is about 360V; Along with the increase of silicon nitride passivation layer thickness, the puncture voltage of device increases rapidly, and when silicon nitride passivation layer thickness is 0.2 μ m, the puncture voltage of device has reached maximum, is 956V; Subsequently, puncture voltage starts to reduce.Visible, this GaN high electron mobility transistor can have higher puncture voltage, and power output is improved, and performance is more excellent.
Claims (8)
1. the GaN high electron mobility transistor of a grid single game plate, comprise substrate, it is characterized in that, also comprise gallium nitride nucleating layer, gallium nitride resilient coating, gallium nitride channel layer, AlGaN the first barrier layer, AlGaN the second barrier layer, gallium nitride block layer and silicon nitride passivation, described gallium nitride nucleating layer is arranged on substrate, gallium nitride resilient coating is arranged on gallium nitride nucleating layer, gallium nitride channel layer is arranged on gallium nitride resilient coating, AlGaN the first barrier layer is arranged on gallium nitride channel layer, AlGaN the second barrier layer is arranged on AlGaN the first barrier layer, gallium nitride block layer is arranged on AlGaN the second barrier layer, on gallium nitride block layer, be provided with source metal, drain metal and gate metal, silicon nitride passivation is arranged on gallium nitride block layer, between source metal and gate metal, and between gate metal and drain metal, on silicon nitride passivation between described gate metal and drain metal, near gate metal position, be provided with grid single game plate.
2. the GaN high electron mobility transistor of a kind of grid single game plate as claimed in claim 1, is characterized in that, substrate is silicon carbide substrates.
3. the GaN high electron mobility transistor of a kind of grid single game plate as claimed in claim 1, is characterized in that, in described AlGaN the first barrier layer, the atomic ratio of Al atom and Ga atom is 0.6:0.4.
4. the GaN high electron mobility transistor of a kind of grid single game plate as claimed in claim 1, is characterized in that, in described AlGaN the second barrier layer, the atomic ratio of Al atom and Ga atom is 0.27:0.73.
5. the GaN high electron mobility transistor of a kind of grid single game plate as claimed in claim 1, it is characterized in that, the thickness of described substrate is 10nm, the thickness of gallium nitride nucleating layer is 20nm, and the thickness of gallium nitride resilient coating is 2 μ m, and the thickness of gallium nitride channel layer is 12nm, the thickness of AlGaN the first barrier layer is 10nm, the thickness of AlGaN the second barrier layer is 10nm, and the thickness of gallium nitride block layer is 3nm, and the thickness of silicon nitride passivation is 200nm.
6. the GaN high electron mobility transistor of a kind of grid single game plate as claimed in claim 1, it is characterized in that, described gate metal is that nickel and gold are made, gate metal and gallium nitride block layer form Schottky contacts, source metal and drain metal are made by antimony, aluminium, nickel and gold from the bottom up, and source metal and drain metal and gallium nitride block layer form ohmic contact.
7. the GaN high electron mobility transistor of a kind of grid single game plate as described in claim 1 or 2 or 3 or 4 or 5 or 6, is characterized in that, described grid single game plate is nickel or gold, and length is 2 μ m.
8. the GaN high electron mobility transistor of a kind of grid single game plate as claimed in claim 7, is characterized in that, when grid single game plate is nickel, its thickness is 20nm, and when grid single game plate is gold, its thickness is 200nm.
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393048A (en) * | 2014-11-18 | 2015-03-04 | 西安电子科技大学 | Medium-modulation power device of composite overlapping gate |
| CN105097900A (en) * | 2014-05-08 | 2015-11-25 | 恩智浦有限公司 | Semiconductor device and manufacturing method |
| CN105762183A (en) * | 2016-05-17 | 2016-07-13 | 中国电子科技集团公司第十三研究所 | AlGaN/GaN polarization doped field effect transistor with field plate and manufacturing method thereof |
| CN106505102A (en) * | 2016-12-12 | 2017-03-15 | 英诺赛科（珠海）科技有限公司 | High mobility gallium nitride semiconductor device and preparation method thereof |
| CN110660643A (en) * | 2019-09-05 | 2020-01-07 | 西交利物浦大学 | Method for optimizing passivation of gallium nitride high electron mobility transistor |
| CN110690283A (en) * | 2019-09-24 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Homoepitaxial gallium nitride transistor device structure |
| CN111785610A (en) * | 2020-05-26 | 2020-10-16 | 西安电子科技大学 | Heat dissipation enhanced diamond-based gallium nitride material structure and preparation method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105097900A (en) * | 2014-05-08 | 2015-11-25 | 恩智浦有限公司 | Semiconductor device and manufacturing method |
| CN104393048A (en) * | 2014-11-18 | 2015-03-04 | 西安电子科技大学 | Medium-modulation power device of composite overlapping gate |
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| CN110660643A (en) * | 2019-09-05 | 2020-01-07 | 西交利物浦大学 | Method for optimizing passivation of gallium nitride high electron mobility transistor |
| CN110690283A (en) * | 2019-09-24 | 2020-01-14 | 中国电子科技集团公司第十三研究所 | Homoepitaxial gallium nitride transistor device structure |
| CN111785610A (en) * | 2020-05-26 | 2020-10-16 | 西安电子科技大学 | Heat dissipation enhanced diamond-based gallium nitride material structure and preparation method thereof |
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Application publication date: 20140219 |