CN105470294A - Vertical gallium nitride power switch device and manufacturing method therefor - Google Patents
Vertical gallium nitride power switch device and manufacturing method therefor Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 101
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 79
- 238000004519 manufacturing process Methods 0.000 title abstract description 3
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 230000004888 barrier function Effects 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 4
- 238000000034 method Methods 0.000 claims description 21
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 20
- 238000002360 preparation method Methods 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 238000000137 annealing Methods 0.000 claims description 3
- 238000001451 molecular beam epitaxy Methods 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 6
- 230000015556 catabolic process Effects 0.000 abstract description 5
- 238000003780 insertion Methods 0.000 abstract 1
- 230000037431 insertion Effects 0.000 abstract 1
- 229910052757 nitrogen Inorganic materials 0.000 abstract 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- CHPZKNULDCNCBW-UHFFFAOYSA-N gallium nitrate Chemical compound [Ga+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O CHPZKNULDCNCBW-UHFFFAOYSA-N 0.000 description 28
- 229940044658 gallium nitrate Drugs 0.000 description 14
- 239000011159 matrix material Substances 0.000 description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 4
- 230000000903 blocking effect Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012827 research and development Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- ARPUHYJMCVWYCZ-UHFFFAOYSA-N ciprofloxacin hydrochloride hydrate Chemical compound O.Cl.C12=CC(N3CCNCC3)=C(F)C=C2C(=O)C(C(=O)O)=CN1C1CC1 ARPUHYJMCVWYCZ-UHFFFAOYSA-N 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
Abstract
The invention discloses a vertical gallium nitride power switch device and a manufacturing method therefor. The switch device comprises: a substrate (a); an N-type heavily-doped gallium nitride layer (b); a current window layer (c); an unintentionally-doped and high-migration-rate gallium nitride layer (d); an aluminum nitride insertion layer (e); an unintentionally-doped aluminum-gallium-nitrogen barrier layer (f); an ohmic contact source (Source); an ohmic contact drain (Drain); and a Schottky contact gate (Gate). According to the switch device, two high-resistance regions HR-GaN serve as current barrier regions, and a current window region g serves as a vertical current channel, so that a vertical gallium nitride based power device can be realized; and the drain and other electrodes (the gate and the drain) are located on different planes, so that the problems of current collapse and the like caused by surface electric leakage, surface breakdown and a virtual gate effect due to a high field region formed on the surface of a material can be avoided; and meanwhile, the size of the device can be reduced and the utilization rate of wafers can be increased.
Description
Technical field
The present invention relates to field of electronic components manufacturing, be specifically related to a kind of vertical-type gallium nitride power switching device and preparation method thereof.
Background technology
Gallium nitride material has that energy gap is large, saturation drift velocity is high and the feature such as high temperature resistant, and the heterostructure formed by it (as AlGaN/GaN heterostructure) has very high two-dimensional electron gas and mobility, thus, in making high performance power semiconductor device, especially in the power electronic device making high speed, low-power consumption, mesolow work, there are obvious potential advantages.
Since two thousand, the research and development of gallium nitrate based power semiconductor have had impressive progress.2000, UCSB reported the power electronic device that puncture voltage is the AlGaN/GaNHEMT structure of 570V; 2008, UCSB reported the device for power switching of the gallium nitrate based HEMT-structure of vertical stratification; 2009, PANASONIC reported the gallium nitrate based device for power switching that puncture voltage is 10.4kV; 2009, EPC company of the U.S. have developed business-like enhancement type gallium nitride power device product, IR, Transphorm company of the U.S. subsequently, MicroGaN, Infineon company of Germany, Japanese Fujitsu, Panasonic company etc. all achieves business-like gallium nitrate based device for power switching.
Although the research and development of gallium nitrate based power semiconductor achieve impressive progress, its performance and theory expectation still have larger gap.At present, international scholar expert's majority concentrates on the research of transversal device.But, because transversal device can form a high electric field region at the material surface of drain electrode side, the surface leakage of meeting generation device or surface breakdown; Meanwhile, the empty matrix effect of the surface state under High-Field can cause the generation of current collapse; And, in order to improve puncture voltage, usually needing larger grid leak spacing, which increases the lateral dimension of device.
Summary of the invention
For Problems existing in background technology, the object of the present invention is to provide a kind of vertical-type gallium nitride power switching device and preparation method thereof, this switching device has two high resistance area HR-GaN as current blocking district, current window mouth region g is as vertical current channel, the gallium nitrate based power device of vertical-type can be realized, drain electrode and other electrode (grid, drain electrode) are not in one plane, can avoid like this forming high field region, the problems such as the current collapse causing surface leakage, surface breakdown, empty matrix effect to cause at material surface; Meanwhile, the size of device can be reduced, improve the utilance of wafer.
The object of the invention is to be achieved through the following technical solutions:
A kind of vertical-type gallium nitride power switching device, described switching device comprises:
Substrate (a);
N-type heavy blended gallium nitride layer (b), described N-type heavy blended gallium nitride layer (b) is produced on substrate (a) top;
Current window layer (c), this floor comprises two high resistant gallium nitride districts (HR-GaN) and current window mouth region (g), described current window layer (c) is produced on described N-type heavy blended gallium nitride layer (b) top, and described current window mouth region (g) is positioned between two described high resistant gallium nitride districts (HR-GaN);
Involuntary doping high mobility gallium nitride layer (d), described involuntary doping high mobility gallium nitride layer (d) is produced on described current window layer (c) top;
Aln inserting layer (e), described aln inserting layer (e) is produced on described involuntary doping high mobility gallium nitride layer (d) top;
Unintentionally adulterate aluminum gallium nitride barrier layer (f), and described aluminum gallium nitride barrier layer (f) that unintentionally adulterates is produced on described aln inserting layer (e) top;
Ohmic contact with source (Source), unintentionally adulterate described in described Ohmic contact with source (Source) is produced on aluminum gallium nitride barrier layer (f) and aln inserting layer (e) top;
Ohmic contact drain electrode (Drain), described ohmic contact drain electrode (Drain) is produced on described N-type heavy blended gallium nitride layer (b) top;
Schottky contacts grid (Gate), described Schottky contacts grid (Gate) is produced on aluminum gallium nitride barrier layer (f) top of unintentionally adulterating.
Further, the thickness of described N-type heavy blended gallium nitride layer (b) is 2-5 μm, and its doping content is 1 × 10
16-1 × 10
19/ cm
-3; It is for being communicated with described current window mouth region (g) and device drain.
Further, the thickness of described high resistant gallium nitride district (HR-GaN) is 0.3-2 μm, and room temperature resistivity is greater than 1 × 10
6Ω cm.
Further, the width L of described current window mouth region (g)
wbe greater than 0.5 μm.
Further, the thickness of described involuntary doping high mobility gallium nitride layer d is 0-0.2 μm, and room temperature electron mobility is greater than 500cm
2/ Vs.
Further, the thickness of described aln inserting layer (e) is 0.5-3nm.
Further, described involuntary doping aluminum gallium nitride barrier layer (f) thickness is 8-30nm, and the molecular formula of aluminum gallium nitride is Al
xga
1-xn, wherein, 0.10≤x≤0.35.
Process a preparation method for the vertical-type gallium nitride power switching device of the application, described method comprises the steps:
1) substrate (a) is selected;
2) described substrate (a) upper growth one deck N-type heavy blended gallium nitride layer (b);
3) mask, lithographic method is adopted to carve the subregion of described N-type heavy blended gallium nitride layer (b);
4) when not removing mask material, growing high resistant gallium nitride, its thickness and the deep equality etched away, then remove mask material;
5) involuntary doping high mobility gallium nitride layer (d) of continued growth;
6) at upper growing aluminum nitride insert layer (e) of described involuntary doping high mobility gallium nitride layer (d);
7) involuntary doping aluminum gallium nitride barrier layer (f) of the upper growth of described aln inserting layer (e);
8) adopt lithographic method to carve drain region, its etching depth is carved into described N-type heavy blended gallium nitride layer (b) place, and respectively herein with the step of source electrode place through photoetching, plated metal, annealing, the ohmic contact realizing source electrode and drain electrode two places makes;
9) at gate location plated metal, do not process, form Schottky contacts.
Further, described substrate (a) be silicon carbide substrates, Sapphire Substrate or silicon substrate any one.
Further, the method for growth is including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy.
The present invention has following positive technique effect:
The switching device of the application has two high resistance area HR-GaN as current blocking district, current window mouth region g is as vertical current channel, the gallium nitrate based power device of vertical-type can be realized, drain electrode and other electrode (grid, drain electrode) are not in one plane, can avoid like this forming high field region, the problems such as the current collapse causing surface leakage, surface breakdown, empty matrix effect to cause at material surface; Meanwhile, the size of device can be reduced, improve the utilance of wafer.
Accompanying drawing explanation
Fig. 1 is the generalized section of the gallium nitrate based device for power switching structure of vertical-type of the application, and in figure, arrow is flow path and the direction of electronics;
Fig. 2 is the gallium nitrate based device for power switching mask of vertical-type of the application, the generalized section of etch step;
Fig. 3 is the generalized section after the vertical-type gallium nitrate based device for power switching growing high resistant gallium nitride district of the application;
Fig. 4 is the generalized section of the gallium nitrate based device for power switching material structure of vertical-type of the application.
Embodiment
Below, with reference to accompanying drawing, more fully illustrate the present invention, accompanying drawing acceptance of the bid shows exemplary embodiment of the present invention.But the present invention can be presented as multiple multi-form, and should not be construed as the exemplary embodiment being confined to describe here.But, these embodiments are provided, thus make the present invention comprehensively with complete, and scope of the present invention is fully conveyed to those of ordinary skill in the art.
For ease of illustrating, here can use such as " on ", the space relative terms such as D score " left side " " right side ", for illustration of the element of shown in figure or the feature relation relative to another element or feature.It should be understood that except the orientation shown in figure, spatial terminology is intended to comprise device different azimuth in use or operation.Such as, if the device in figure is squeezed, be stated as the element being positioned at other elements or feature D score will be positioned at other elements or feature " on ".Therefore, exemplary term D score can comprise upper and lower both orientation.Device can otherwise be located (90-degree rotation or be positioned at other orientation), and space used here illustrates relatively can correspondingly explain.
As Figure 1-4, this application provides the gallium nitrate based device for power switching of a kind of vertical-type, comprising: substrate a; N-type heavy blended gallium nitride layer b, this N-type heavy blended gallium nitride layer b is produced on above substrate a, comprising the growth of resilient coating; Current window layer c, this floor comprises two high resistant gallium nitride district HR-GaN and current window mouth region g, high resistant gallium nitride district c is produced on above N-type heavy blended gallium nitride floor b after mask, etching, current window mouth region g is the heavy blended gallium nitride region stayed after mask, etching, between two high resistant gallium nitride districts; Involuntary doping high mobility gallium nitride layer d, this involuntary doping high mobility gallium nitride layer d is produced on above current window layer c; Aln inserting layer e, this aln inserting layer e are produced on above involuntary doping high mobility gallium nitride layer d; Unintentionally adulterate aluminum gallium nitride barrier layer f, and this aluminum gallium nitride barrier layer f that unintentionally adulterates is produced on above aln inserting layer e; Ohmic contact with source Source, this Ohmic contact with source Source are produced on above the aluminum gallium nitride barrier layer f and aln inserting layer e that unintentionally adulterates; Ohmic contact drain D rain, this ohmic contact drain D rain are produced on above N-type heavy blended gallium nitride layer b; Schottky contacts grid G ate, this Schottky contacts grid G ate are produced on above the aluminum gallium nitride barrier layer f that unintentionally adulterates.
Preferably, the thickness of the heavy blended gallium nitride layer b of the application is 2-5 μm, and its doping content is 1 × 10
16-1 × 10
19/ cm
-3; Its Main Function is communicated with current window mouth region g and device drain.The thickness of high resistant gallium nitride district HR-GaN is 0.3-2 μm, and room temperature resistivity is greater than 1 × 10
6Ω cm; Its Main Function is formation current blocking district, stops electric current to pass through.The width L of current window mouth region g
wbe greater than 0.5 μm, " convex " shape region of carrying over after being mask, etching, material behavior is identical with heavy blended gallium nitride layer b, and this region is the region that electric current vertically circulates.The thickness of involuntary doping high mobility gallium nitride layer d is 0-0.2 μm, and room temperature electron mobility is greater than 500cm
2/ Vs, its Main Function is to provide an excellent two-dimensional electron gas channel region, and (distance is L in current window mouth region g area just above and lateral extensions
g1), its electric current can realize turn-on and turn-off under the control of signal.Aln inserting layer e thickness is 0.5-3nm, and its Main Function forms high-quality two-dimensional electron gas.Involuntary doping aluminum gallium nitride Al
xga
1-xn barrier layer f thickness is 8-30nm, 0.10≤x≤0.35, and its Main Function forms polarized electric field under polarization, produces two-dimensional electron gas.
In addition, present invention also provides the preparation method of the gallium nitrate based power device of a kind of vertical-type, the method comprises the steps:
Step 1: select a substrate a;
Step 2: grow the growth that one deck heavy blended gallium nitride layer b(comprises resilient coating on substrate a), its thickness is 2-5 μm, and doping content is 1 × 10
16-1 × 10
19/ cm
-3;
Step 3: adopt mask, lithographic method to carve the subregion (see figure 2) of heavy blended gallium nitride layer b;
Step 4: when not removing mask material, growing high resistant gallium nitride, its thickness and the deep equality etched away, then remove mask material (see figure 3);
Step 5: continued growth involuntary doping high mobility gallium nitride layer d, growth thickness is 0-0.2 μm;
Step 6: growing aluminum nitride insert layer e on involuntary doping high mobility gallium nitride layer d, growth thickness is 0.5-3nm;
Step 7: grow involuntary doping aluminum gallium nitride Al on aln inserting layer e
xga
1-xn barrier layer f, its thickness is 8-30nm, 0.10≤x≤0.35;
Step 8: adopt lithographic method to carve drain region, its etching depth should be carved into heavy blended gallium nitride layer b place, and respectively herein with source electrode place through steps such as photoetching, plated metal, annealing, realize the ohmic contact making at source electrode and drain electrode two places;
Step 9: at gate location plated metal, do not process, form Schottky contacts, its length should be greater than L
w, like this can better turn-on and turn-off of electric current in involuntary doping high mobility gallium nitride layer d below control gate.
Preferably, the substrate a in step 1 is silicon carbide substrates or Sapphire Substrate or silicon substrate; The growing method designed in this preparation method is including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy, and the application preferentially adopts metal-organic chemical vapor deposition equipment method.
In sum, the invention provides gallium nitrate based power device of a kind of vertical-type and preparation method thereof, the problems such as the current collapse phenomenon that this power device can avoid the surface leakage of device, surface breakdown, empty matrix effect to cause, reduce the size of device simultaneously, improve the utilance of wafer.
Top is described just in order to the present invention is described, is construed as the present invention and is not limited to above embodiment, meet the various variants of inventive concept all within protection scope of the present invention.
Claims (10)
1. a vertical-type gallium nitride power switching device, is characterized in that, described switching device comprises:
Substrate (a);
N-type heavy blended gallium nitride layer (b), described N-type heavy blended gallium nitride layer (b) is produced on substrate (a) top;
Current window layer (c), this floor comprises two high resistant gallium nitride districts (HR-GaN) and current window mouth region (g), described current window layer (c) is produced on described N-type heavy blended gallium nitride layer (b) top, and described current window mouth region (g) is positioned between two described high resistant gallium nitride districts (HR-GaN);
Involuntary doping high mobility gallium nitride layer (d), described involuntary doping high mobility gallium nitride layer (d) is produced on described current window layer (c) top;
Aln inserting layer (e), described aln inserting layer (e) is produced on described involuntary doping high mobility gallium nitride layer (d) top;
Unintentionally adulterate aluminum gallium nitride barrier layer (f), and described aluminum gallium nitride barrier layer (f) that unintentionally adulterates is produced on described aln inserting layer (e) top;
Ohmic contact with source (Source), unintentionally adulterate described in described Ohmic contact with source (Source) is produced on aluminum gallium nitride barrier layer (f) and aln inserting layer (e) top;
Ohmic contact drain electrode (Drain), described ohmic contact drain electrode (Drain) is produced on described N-type heavy blended gallium nitride layer (b) top;
Schottky contacts grid (Gate), described Schottky contacts grid (Gate) is produced on aluminum gallium nitride barrier layer (f) top of unintentionally adulterating.
2. vertical-type gallium nitride power switching device according to claim 1, is characterized in that, the thickness of described N-type heavy blended gallium nitride layer (b) is 2-5 μm, and its doping content is 1 × 10
16-1 × 10
19/ cm
-3; It is for being communicated with described current window mouth region (g) and device drain.
3. vertical-type gallium nitride power switching device according to claim 1, is characterized in that, the thickness of described high resistant gallium nitride district (HR-GaN) is 0.3-2 μm, and room temperature resistivity is greater than 1 × 10
6Ω cm.
4. vertical-type gallium nitride power switching device according to claim 1, is characterized in that, the width L of described current window mouth region (g)
wbe greater than 0.5 μm.
5. vertical-type gallium nitride power switching device according to claim 1, is characterized in that, the thickness of described involuntary doping high mobility gallium nitride layer d is 0-0.2 μm, and room temperature electron mobility is greater than 500cm
2/ Vs.
6. vertical-type gallium nitride power switching device according to claim 1, is characterized in that, the thickness of described aln inserting layer (e) is 0.5-3nm.
7. vertical-type gallium nitride power switching device according to claim 1, is characterized in that, described involuntary doping aluminum gallium nitride barrier layer (f) thickness is 8-30nm, and the molecular formula of aluminum gallium nitride is Al
xga
1-xn, wherein, 0.10≤x≤0.35.
8. prepare a preparation method for the arbitrary described vertical-type gallium nitride power switching device of claim 1-7, it is characterized in that, described method comprises the steps:
1) substrate (a) is selected;
2) described substrate (a) upper growth one deck N-type heavy blended gallium nitride layer (b);
3) mask, lithographic method is adopted to carve the subregion of described N-type heavy blended gallium nitride layer (b);
4) when not removing mask material, growing high resistant gallium nitride, its thickness and the deep equality etched away, then remove mask material;
5) involuntary doping high mobility gallium nitride layer (d) of continued growth;
6) at upper growing aluminum nitride insert layer (e) of described involuntary doping high mobility gallium nitride layer (d);
7) involuntary doping aluminum gallium nitride barrier layer (f) of the upper growth of described aln inserting layer (e);
8) adopt lithographic method to carve drain region, its etching depth is carved into described N-type heavy blended gallium nitride layer (b) place, and respectively herein with the step of source electrode place through photoetching, plated metal, annealing, the ohmic contact realizing source electrode and drain electrode two places makes;
9) at gate location plated metal, do not process, form Schottky contacts.
9. preparation method according to claim 8, is characterized in that, described substrate (a) is silicon carbide substrates, Sapphire Substrate or silicon substrate any one.
10. preparation method according to claim 8, is characterized in that, the method for growth is including, but not limited to metal-organic chemical vapor deposition equipment method, molecular beam epitaxy and vapour phase epitaxy.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107393954A (en) * | 2017-08-02 | 2017-11-24 | 电子科技大学 | A kind of GaN hetero-junctions vertical field effect pipe |
| CN110379846A (en) * | 2019-07-29 | 2019-10-25 | 上海科技大学 | A kind of enhanced vertical-type transistor component of gallium nitride and preparation method thereof |
| CN110957354A (en) * | 2019-11-25 | 2020-04-03 | 中国电子科技集团公司第五十五研究所 | Silicon heavily-doped gallium nitride heteroepitaxy material structure and stress control method |
| CN111682067A (en) * | 2020-06-23 | 2020-09-18 | 东南大学 | High electron mobility transistor with lateral depletion region |
| WO2020216250A1 (en) * | 2019-04-26 | 2020-10-29 | 苏州晶湛半导体有限公司 | Enhanced device and preparation method therefor |
| WO2023109277A1 (en) * | 2021-12-13 | 2023-06-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | High electron mobility transistor structure and manufacturing method therefor and application thereof |
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| CN110379846A (en) * | 2019-07-29 | 2019-10-25 | 上海科技大学 | A kind of enhanced vertical-type transistor component of gallium nitride and preparation method thereof |
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| CN111682067A (en) * | 2020-06-23 | 2020-09-18 | 东南大学 | High electron mobility transistor with lateral depletion region |
| CN111682067B (en) * | 2020-06-23 | 2023-04-25 | 东南大学 | High electron mobility transistor with lateral depletion region |
| WO2023109277A1 (en) * | 2021-12-13 | 2023-06-22 | 中国科学院苏州纳米技术与纳米仿生研究所 | High electron mobility transistor structure and manufacturing method therefor and application thereof |
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