CN105185841B - A kind of field-effect diode and preparation method thereof - Google Patents
A kind of field-effect diode and preparation method thereof Download PDFInfo
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- CN105185841B CN105185841B CN201510158880.XA CN201510158880A CN105185841B CN 105185841 B CN105185841 B CN 105185841B CN 201510158880 A CN201510158880 A CN 201510158880A CN 105185841 B CN105185841 B CN 105185841B
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- 230000005669 field effect Effects 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title abstract description 7
- 230000004888 barrier function Effects 0.000 claims abstract description 173
- 238000005530 etching Methods 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 claims abstract description 18
- 239000010410 layer Substances 0.000 claims description 269
- 229910002601 GaN Inorganic materials 0.000 claims description 43
- 239000000463 material Substances 0.000 claims description 37
- 238000000034 method Methods 0.000 claims description 32
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 25
- 229910052782 aluminium Inorganic materials 0.000 claims description 23
- 239000004411 aluminium Substances 0.000 claims description 23
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 23
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 18
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical group [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 17
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 8
- 229910052737 gold Inorganic materials 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 238000005036 potential barrier Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 239000007788 liquid Substances 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000005533 two-dimensional electron gas Effects 0.000 description 23
- 230000008569 process Effects 0.000 description 8
- 230000015556 catabolic process Effects 0.000 description 7
- 230000010287 polarization Effects 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- 230000002269 spontaneous effect Effects 0.000 description 3
- 238000001039 wet etching Methods 0.000 description 3
- 229910017083 AlN Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 230000006911 nucleation Effects 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- -1 gallium-nitride metal oxide Chemical class 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical group 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/66196—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices with an active layer made of a group 13/15 material
- H01L29/66204—Diodes
- H01L29/66212—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- Ceramic Engineering (AREA)
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Abstract
The invention discloses a kind of field-effect diode and preparation method thereof, which includes：Substrate；Positioned at the channel layer of substrate；The first barrier layer on channel layer；Etching barrier layer on the first barrier layer；The second barrier layer on etching barrier layer；Mask layer on the second barrier layer；Groove within the second barrier layer and mask layer；Cathode on the second barrier layer；The anode formed by being located at the Schottky electrode in groove and outside groove and the anode ohmic contact electrode phase short circuit on the second barrier layer.Field-effect diode of the present invention has the advantages that low positive cut-in voltage, low reverse current leakage and high-breakdown-voltage, and the depth of etching groove is easy to control, and manufacture craft is simple.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of field-effect diode and preparation method thereof.
Background technology
With GaN (gallium nitride) be representative third generation semiconductor material with wide forbidden band have forbidden band is loose, breakdown field strength is high,
The excellent material property feature such as saturated electron drift velocity height, thermal conductivity height, heterogeneous interface two-dimensional electron gas height, is compared
In Si materials, GaN is more suitable for making the power electronic devices of high-power, high current density, high switching speed.With conventional Si devices
It compares, GaN device can carry higher power density, have higher energy conversion efficiency, can reduce the body of whole system
Product and weight, so as to reduce system cost.
Schottky-barrier diode based on GaN is resistant to very high breakdown reverse voltage, however, its forward conduction is electric
Pressure will usually reach 1V or so.To expand the application range of GaN base Schottky diode, breakdown voltage height and positive guide need to be obtained
It is powered and presses the diode of very low (close to 0V).
In order to adjust the forward conduction voltage of GaN diode, the injection of generally use barrier layer fluorine ion or barrier layer etching
The method of groove.Chen Jing et al. (publication number CN 101562182A) proposes to note in a part of barrier layer under diode anode
Enter fluorine ion, introduce permanent negative electrical charge, can effectively exhaust the two-dimensional electron gas under Schottky gate, so as to which pinch off conducting is logical
Road is shorted together by Schottky gate and diode anode, and the forward conduction voltage for realizing diode is controlled by Schottky
The threshold voltage of raceway groove determines, is not influenced by Schottky junction barrier.But fluorine ion injection technology is complicated, and can cause device
The problem of part stability.Therefore, Many researchers all realize barrier layer etching groove two close to the forward conduction voltage of 0V
Pole pipe is studied.In general, the depth of the etching groove of barrier layer is difficult to control, the process is more complicated, and etching apparatus is expensive.
Zhe Xu(Zhe Xu,Jinyan Wang,Yang Liu,Jinbao Cai,Jingqian Liu,Maojun
Wang,Min Yu,Bing Xie,Wenggang Wu,Xiaohua Ma,and Jincheng Zhang.Fabrication of
Normally Off AlGaN/GaN MOSFET Using a Self-Terminating Gate Recess Etching
Technique, IEEE Electron Device Letters, VOL.34, No.7, July 2013) et al. propose a kind of heat
It aoxidizes and obtains enhanced gallium-nitride metal oxide semiconductor field effect transistor (MOSFET) with the method for wet etching.
The realization process of this method is first to carry out thermal oxide to AlGaN layer, is then performed etching in KOH solution.This method has easy
The characteristics of control, repeatability is high, and the lithographic method has high selection ratio to AlGaN/GaN, can be automatically stopped in AlGaN/
GaN interfaces.However, since barrier layer is removed completely, the two-dimensional electron gas under groove all exhausts, therefore this method obtains
MOSFET threshold voltage it is too big, therefore the structure is not suitable for diode.And corroded at channel bottom channel layer surface
Influence, roughness can be increased, cause the increase of reverse leakage.
Invention content
It is an object of the invention to propose a kind of field-effect diode and preparation method thereof, which can solve
Certainly cut-in voltage is high in the prior art, reverse leakage is big, and the depth of etching groove is difficult to control, complex manufacturing technology is asked
Topic.
For this purpose, the present invention uses following technical scheme：
In a first aspect, the invention discloses a kind of field-effect diode, including：
Substrate；
Channel layer, the channel layer are located at the substrate；
First barrier layer, first barrier layer are located on the channel layer；
Etching barrier layer, the etching barrier layer are located on first barrier layer；
Second barrier layer, second barrier layer are located on the etching barrier layer；
Mask layer, the mask layer are located on second barrier layer；
Groove, the groove are located within second barrier layer and the mask layer, and the bottom of the groove terminates
In the interface of second barrier layer and the etching barrier layer；
Cathode, the cathode are located on second barrier layer；
Anode, the anode is by being located at Schottky electrode in the groove and outside the groove and positioned at described second
Anode ohmic contact electrode phase short circuit on barrier layer is formed；
The material of second barrier layer is aluminum gallium nitride, the mass percent of the aluminium component of second barrier layer from upper and
Under be gradually reduced；
The shape of the groove is inverted trapezoidal.
Further, the material of the cathode and anode ohmic contact electrode is any one of titanium, aluminium, nickel or gold
Or at least two combination, the Schottky electrode is single-layer or multi-layer metal, and the metal is any one of for nickel, platinum or aluminium
Or at least two combination.
Further, it further includes：
Barrier layer is carried on the back, the back of the body barrier layer is between the substrate and the channel layer, the material of the back of the body barrier layer
For p-type gallium nitride or p-type aluminum gallium nitride.
Second aspect, the invention discloses a kind of production method of field-effect diode, including：
Substrate is provided；
Channel layer, the first barrier layer, etching barrier layer, the second barrier layer and mask are sequentially prepared in the substrate
Layer；
Cathode and anode ohmic contact electrode are sequentially prepared on second barrier layer；
Groove is prepared within the second barrier layer and mask layer between the cathode and anode ohmic contact electrode,
And the bottom of the groove terminates at the interface of second barrier layer and the etching barrier layer；
Prepare Schottky electrode on the groove, it is mutually short that the Schottky electrode with the anode ohmic contacts electrode
It connects；
The material of second barrier layer is aluminum gallium nitride, the mass percent of the aluminium component of second barrier layer from upper and
Under be gradually reduced；
The shape of the groove is inverted trapezoidal.
Further, ditch is prepared within the second barrier layer between the cathode and anode ohmic contact electrode
Slot, and the bottom of the groove terminates at the interface of second barrier layer and the etching barrier layer, including：
It determines to need the region to form groove using photoetching technique；
Removing described needs to form the mask layer in the region of groove；
Thermal oxide is carried out to second barrier layer；
The second barrier layer to form the region of groove is needed to erode by described using wet etch techniques, form groove.
Further, the temperature of the thermal oxide is 500-700 degrees Celsius, and the liquid that the wet etch techniques are used is
Potassium hydroxide, the time of corrosion is 30-60 minutes.
Field-effect diode of the present invention has low positive cut-in voltage, low reverse current leakage and high-breakdown-voltage
Advantage, and by introducing etching barrier layer between the first barrier layer and the second barrier layer, when preparing groove, the bottom of groove is whole
Terminate in the interface of the second barrier layer and etching barrier layer so that the depth of etching groove is easy to control, and can be obtained cut-in voltage and be connect
Near is the diode of 0V, and manufacture craft is simple.
Description of the drawings
In order to clearly illustrate the technical solution of exemplary embodiment of the present, below to required in description embodiment
The attached drawing to be used does a simple introduction.Obviously, the attached drawing introduced is the part of the embodiment of the invention to be described
The attached drawing of attached drawing rather than whole, for those of ordinary skill in the art, without creative efforts, may be used also
To obtain other attached drawings according to these attached drawings.
Fig. 1 is the structure chart for the field-effect diode that the embodiment of the present invention one provides.
Fig. 2 is that the field-effect diode that the embodiment of the present invention one provides applies smaller forward voltage (being less than 1V) in anode
When, along A-A at groove/The band structure figure of distribution.
Wherein, B areas are etching barrier layer；C areas are the first barrier layer；D areas are channel layer；ECFor conduction band bottom；EVFor valence band
Top；EFFor fermi level.
Fig. 3 be the embodiment of the present invention one provide field-effect diode in reverse-biased, along A-A at groove/Distribution
Band structure figure.
Fig. 4 is the flow chart of the production method for the field-effect diode that the embodiment of the present invention one provides.
Fig. 5 be the embodiment of the present invention one provide field-effect diode production method in step in cathode and anode ohmic
Groove is prepared, and the deep bottom of groove terminates at second potential barrier within the second barrier layer and mask layer between contact electrode
Layer and the flow chart of the interface of the etching barrier layer.
Fig. 6 is the structure chart of field-effect diode provided by Embodiment 2 of the present invention.
Fig. 7 is the flow chart of the production method of field-effect diode provided by Embodiment 2 of the present invention.
Fig. 8 is the structure chart for the field-effect diode that the embodiment of the present invention three provides.
Fig. 9 is the structure chart for the field-effect diode that the embodiment of the present invention four provides.
Figure 10 is the flow chart of the production method for the field-effect diode that the embodiment of the present invention four provides.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below with reference to attached in the embodiment of the present invention
Figure, by specific embodiment, is fully described by technical scheme of the present invention.Obviously, described embodiment is of the invention
Part of the embodiment, instead of all the embodiments, based on the embodiment of the present invention, those of ordinary skill in the art are not doing
The every other embodiment obtained under the premise of going out creative work, each falls within protection scope of the present invention.
Embodiment one：
Fig. 1 is the structure chart for the field-effect diode that the embodiment of the present invention one provides.As shown in Figure 1, two pole of field-effect
Pipe includes：
Substrate 1.
In the present embodiment, substrate material can be gallium nitride, silicon, sapphire or silicon carbide.
Nucleating layer 2, on substrate 1.
In the present embodiment, nucleation layer material can be aluminium nitride, gallium nitride or aluminum gallium nitride,
Buffer layer 3, on nucleating layer 2.
In the present embodiment, cushioning layer material can be aluminum gallium nitride or other III-V compound, and thickness can be 1-3.5
Micron.
Channel layer 4, on buffer layer 3.
In the present embodiment, channel layer materials can be gallium nitride, and thickness can be 15-35 nanometers.
First barrier layer 5, on channel layer 4.
In the present embodiment, the first barrier layer and channel layer form the boundary of heterojunction structure, the first barrier layer and channel layer
Two-dimensional electron gas 6 is formed at face.First abarrier layer material can be aluminum gallium nitride, and the mass percent of aluminium can be 10%-
20%, thickness can be 2-5 nanometers.
Etching barrier layer 7, on the first barrier layer 5.
In the present embodiment, etching barrier layer materials can be gallium nitride, and thickness can be 1-5 nanometers.
Second barrier layer 8, on etching barrier layer 7.
In the present embodiment, the material of the second barrier layer can be aluminum gallium nitride, and the mass percent of aluminium can be 20%-
45%, thickness can be 15-50 nanometers.
Cathode 9, on the second barrier layer 8.
In the present embodiment, cathode and the second barrier layer form Ohmic contact.The material of cathode can be titanium, aluminium, nickel or gold
Any one of or at least two combination.The forming process of cathode can include the second barrier layer of dry etching, such formation
Process can promote the performance of Ohmic contact that cathode and the second barrier layer are formed.
Anode ohmic contacts electrode 10, on the second barrier layer 8.
In the present embodiment, anode ohmic contact electrode and the second barrier layer form Ohmic contact.Anode ohmic contacts electrode
Material can be any one of titanium, aluminium, nickel or gold or at least two combination.Anode ohmic contacts the forming process of electrode
It can include the second barrier layer of dry etching, such forming process can promote anode ohmic contact electrode and the second barrier layer shape
Into Ohmic contact performance.
Mask layer 11, on the second barrier layer 8, and the region that non-cathode 9 and anode ohmic contact electrode 10 cover.
In the present embodiment, mask material can be gallium nitride or silica.
Groove, positioned at cathode 9 and anode ohmic contact electrode 10 between the second barrier layer 8 and mask layer 11 within, and
The bottom of groove terminates at the interface of the second barrier layer 8 and etching barrier layer 7.
In the present embodiment, the concentration of beneath trenches two-dimensional electron gas is less than the concentration of groove both sides two-dimensional electron gas.
Schottky electrode 12 on groove, and contacts 10 phase short circuit of electrode with anode ohmic.
In the present embodiment, Schottky electrode contacts electrode with anode ohmic and forms anode.Schottky electrode can be individual layer
Or multiple layer metal, metal can be any one of nickel, platinum or aluminium or at least two combination.
In the present embodiment, since there are piezoelectric effects and spontaneous pole between the second barrier layer, the first barrier layer and channel layer
Change effect, the two-dimensional electron gas that polarization charge induces is formed at the interface of the first barrier layer and channel layer.Due to groove
Second abarrier layer material at place is removed, and corresponding first barrier layer thickness of channel bottom is smaller, the first barrier layer and raceway groove
The piezoelectric polarization effect and spontaneous polarization effect of layer are not enough to induce the two-dimensional electron gas of high concentration.Therefore, in the first potential barrier
Layer channel layer between two-dimensional electron gas beneath trenches have it is a degree of exhaust, i.e. the two-dimensional electron gas of beneath trenches is dense
Degree is lower than the concentration of the two-dimensional electron gas of both sides.Increase the thickness of the first barrier layer, obtain the higher two dimension electricity of concentration under groove
Sub- gas reduces the thickness of the first barrier layer, obtains the relatively low two-dimensional electron gas of concentration under groove.Adjust the thickness of the first barrier layer
Different degrees of piezoelectric polarization and spontaneous polarization can be obtained, it is hereby achieved that cut-in voltage is close to two pole of field-effect of 0V
Pipe.
When the anode of the field-effect diode applies positive bias-voltage, in the trench under the action of Schottky electrode, groove
Channel layer under bottom section and the conduction band in the hetero-junctions of the first barrier layer are bent downwardly, closer to fermi level, in raceway groove
The interface of layer and the first barrier layer forms the accumulation area of electronics, which is connected with Two-dimensional electron gas channel, shape
Into the conductive channel of diode.Electronics is flowed into from cathode, by the two dimension at the first barrier layer under cathode and channel layer interface
Electronics accumulation area under electron gas channel, trench bottom regions, the first barrier layer and channel layer under anode ohmic contact electrode
Two-dimensional electron gas channel finally flows out, that is, the field-effect diode has forward conduction characteristic from anode.
The concentration of the two-dimensional electron gas of formation can be controlled by the thickness for adjusting the first barrier layer, so as to which this be controlled to imitate
Answer the cut-in voltage of diode.First barrier layer thickness is smaller, and the degree that the two-dimensional electron gas of beneath trenches exhausts is bigger, i.e., dense
It spends smaller, needs bigger anode voltage that could realize the forward conduction of the field-effect diode.Increase the thickness of the first barrier layer
Degree can reduce the cut-in voltage of the field-effect diode.Therefore, suitable first barrier layer thickness of selection can be realized close
The field-effect diode cut-in voltage of 0V.
The field-effect diode only need to apply smaller bias in positively biased in anode, will be in the channel layer under groove
With occurring electronics stack layer at the interface of the first barrier layer, high concentration is connected, the two-dimensional electron gas of high mobility is used as conduction
Channel, therefore the forward voltage drop of the field-effect diode and conducting resistance are smaller.
Fig. 2 is that the field-effect diode that the embodiment of the present invention one provides applies smaller forward voltage (being less than 1V) in anode
When, along A-A at groove/The band structure figure of distribution.As shown in Fig. 2, the anode application when the field-effect diode is smaller just
During to voltage (being less than 1V), the conduction band at the first barrier layer and channel layer interface is bent downwardly, under fermi level, because
There is electronics stack layer in channel layer surface in this.The electronics stack layer connection ditch channel layer two-dimensional electron gas forms diode conduction
Channel, therefore the cut-in voltage of diode is low, conducting resistance is also smaller.
Fig. 3 be the embodiment of the present invention one provide field-effect diode in reverse-biased, along A-A at groove/Distribution
Band structure figure.As shown in figure 3, when the anode of the field-effect diode applies reversed bias voltage, (anode opposing cathode is applied
Add negative bias voltage), the channel layer under the Schottky electrode of trench region is bent up with the conduction band in the hetero-junctions of the first barrier layer
Song is gradually distance from fermi level, and Schottky electrode enhances the depletion action of two-dimensional electron gas in groove, and two-dimensional electron gas exhausts
Region is further widened, and forms cut-off raceway groove, thus electric current cannot be connected between a cathode and an anode under reversed bias voltage, make anti-
It is relatively low to leakage current.
Fig. 4 is the flow chart of the production method for the field-effect diode that the embodiment of the present invention one provides.It as shown in figure 4, should
Method includes：
Step 401 provides substrate.
In this step, substrate material can be gallium nitride.
Step 402 is sequentially prepared nucleating layer and buffer layer in substrate.
In this step, the method for preparing nucleating layer or buffer layer can be Metal Organic Chemical Vapor Deposition method
Or molecular beam epitaxial method.
Wherein, nucleation layer material can be aluminium nitride, gallium nitride or aluminum gallium nitride, cushioning layer material can be aluminum gallium nitride or its
His III-V compound.
Step 403, be sequentially prepared on buffer layer channel layer, the first barrier layer, etching barrier layer, the second barrier layer and
Mask layer.
In this step, the method for preparing channel layer, the first barrier layer, etching barrier layer or the second barrier layer can be metal
Organic compound chemical vapor deposition method or molecular beam epitaxial method.
Wherein, channel layer materials can be gallium nitride, the first abarrier layer material can be aluminum gallium nitride, etching barrier layer materials
Can be gallium nitride, the material of the second barrier layer can be aluminum gallium nitride.
Preferably, the preparation process of etching barrier layer carries out after the first barrier layer is completed in same cavity,
And the growth course of etching barrier layer does not contact ambient atmosphere.
Step 404 is sequentially prepared cathode and anode ohmic contact electrode on the second barrier layer.
In this step, the structure obtained after step 403 is isolated, etching mask layer, is made on the second barrier layer
Standby cathode and anode ohmic contact electrode.
Wherein, the material of cathode can be any one of titanium, aluminium, nickel or gold or at least two combination, anode ohmic
The material for contacting electrode can be any one of titanium, aluminium, nickel or gold or at least two combination.
Groove is prepared within step 405, the second barrier layer and mask layer between cathode and anode ohmic contact electrode,
And the bottom of groove terminates at the interface of the second barrier layer and etching barrier layer.
Preferably, as shown in figure 5, step 405 includes the following steps：
Step 415 determines to need the region to form groove using photoetching technique.
Step 425, removal need to form the mask layer in the region of groove.
Step 435 carries out thermal oxide to the second barrier layer.
In this step, the temperature of thermal oxide is 500-700 degrees Celsius.
Step 445 will need the second barrier layer to form the region of groove to erode using wet etch techniques, form ditch
Slot.
In this step, the liquid that wet etching is used is potassium hydroxide, and the time of corrosion is 30-60 minutes.As second
The aluminum gallium nitride of abarrier layer material can be easily dissolved in the alkaline solutions such as potassium hydroxide after thermal oxide, and is used as etching
The gallium nitride of barrier material is insoluble in alkaline solutions such as potassium hydroxide.Therefore, gallium nitride can be used as effective etching groove
Etching barrier layer.
In this step, groove is prepared using wet etching method, solves and uses dry etching method system in the prior art
The damage of material and defect, simple for process caused by standby groove, and reliability is high.
Step 406 prepares Schottky electrode on groove, and Schottky electrode contacts electrode phase short circuit with anode ohmic.
In this step, by groove Schottky metal prepare Schottky electrode.
Wherein, Schottky electrode can be single-layer or multi-layer metal, the material of metal for any one of nickel, platinum or aluminium or
At least two combination.
The field-effect tube diode that the embodiment of the present invention one provides has low positive cut-in voltage, low reverse current leakage and height
The advantages of breakdown voltage.And the first barrier layer and etching barrier layer are introduced on channel layer, make the quarter of the second barrier layer groove
Erosion is terminated on etching barrier layer, compared with not increasing the structure of etching barrier layer, reduces the etching damage of channel layer interface
Wound, thus reduce the reverse leakage current at raceway groove.Suitable first barrier layer thickness also may be selected in this structure, obtains and opens electricity
Press the field-effect diode for 0V or so.
Embodiment two：
Fig. 6 is the structure chart of field-effect diode provided by Embodiment 2 of the present invention.As shown in fig. 6, implement with the present invention
Unlike example one, field-effect diode provided by Embodiment 2 of the present invention further includes：Between buffer layer 3 and channel layer 4
Back of the body barrier layer 13.
In the present embodiment, the material for carrying on the back barrier layer can be p-type gallium nitride or p-type aluminum gallium nitride.In this configuration, potential barrier is carried on the back
The negative electrical charge that the negative electrical charge and piezoelectric polarization that p-type doping in layer is introduced into generate further suppresses the Two-dimensional electron in channel layer
Gas concentration can further regulate and control the cut-in voltage of diode, so as to obtain numerical value as just and close to the cut-in voltage of 0V.
Fig. 7 is the flow chart of the production method of field-effect diode provided by Embodiment 2 of the present invention.As shown in fig. 7, with
The embodiment of the present invention one is compared, the production method of field-effect diode provided by Embodiment 2 of the present invention in step 402, in substrate
On be sequentially prepared after nucleating layer and buffer layer, step 403, be sequentially prepared on buffer layer channel layer, the first barrier layer,
It is further included before etching barrier layer, the second barrier layer and mask layer：
Step 423 prepares back of the body barrier layer on buffer layer.
In this step, the material for carrying on the back barrier layer can be p-type gallium nitride or p-type aluminum gallium nitride.
Correspondingly, step 403 is to be sequentially prepared channel layer, the first barrier layer, etching barrier layer, the on back of the body barrier layer
Two barrier layers and mask layer.
Compared with the field-effect diode that the embodiment of the present invention one provides, two pole of field-effect provided by Embodiment 2 of the present invention
Pipe carries on the back negative electrical charge and piezoelectricity that the p-type doping in barrier layer introduces by introducing back of the body barrier layer between buffer layer and channel layer
The negative electrical charge that polarization generates further suppresses the two-dimensional electron gas in channel layer, can further regulate and control diode
Cut-in voltage, so as to obtain numerical value as just and close to the cut-in voltage of 0V.
Embodiment three：
Fig. 8 is the structure chart for the field-effect diode that the embodiment of the present invention three provides.As shown in figure 8, implement with the present invention
Unlike example one, the quality percentage of the aluminium component of the second barrier layer 8 of the field-effect diode that the embodiment of the present invention three provides
Than being gradually reduced from top to bottom, the shape of groove is inverted trapezoidal.
In the present embodiment, the mass percent of the aluminium component of the second barrier layer gradually increases from bottom to top, changes in gradient.
In the thermal oxidation process of the second barrier layer, with the difference of the mass percent of aluminium component, degree of oxidation is different, aluminium component
Mass percent more higher easier aoxidized.Therefore during corrosion forms groove, the high portion of aluminium constituent mass percentage
Divide and be easily corroded, and form the groove of inverted trapezoidal structure wide at the top and narrow at the bottom.The side wall of the inverted trapezoidal groove can form field plate knot
Structure expands the depleted region of beneath trenches two-dimensional electron gas, promotes the breakdown voltage of diode.
Compared with the field-effect diode that the embodiment of the present invention one provides, two pole of field-effect of the offer of the embodiment of the present invention three
The second barrier layer that pipe is gradually reduced from top to bottom by using the mass percent of aluminium component is formed corroding the second barrier layer
During groove, the groove of inverted trapezoidal structure can be formed, the side wall of inverted trapezoidal groove forms field plate structure, can expand beneath trenches
The depleted region of two-dimensional electron gas promotes the breakdown voltage of diode.
Example IV：
Fig. 9 is the structure chart for the field-effect diode that the embodiment of the present invention four provides.As shown in figure 9, implement with the present invention
Unlike example one, the field-effect diode that the embodiment of the present invention four provides further includes：
Dielectric layer 14 on the mask layer 11 between Schottky electrode 12 and cathode 9, and extends to Schottky electrode
On 12, covering part Schottky electrode 12.
Field plate 15 originates on 14 unlapped anode of dielectric layer, and extends on dielectric layer 14.
In the present embodiment, the material of field plate can be any one of titanium, aluminium, nickel or gold or at least two combination.
Figure 10 is the production method flow chart for the field-effect diode that the embodiment of the present invention four provides.As shown in Figure 10, with
The embodiment of the present invention two is compared, the embodiment of the present invention three provide field-effect diode production method in step 406, in groove
On prepare Schottky electrode, Schottky electrode includes after electrode phase short circuit is contacted with anode ohmic：
Preparation media layer on step 407, the mask layer between Schottky electrode and cathode, and extend to Schottky electricity
On pole, covering part Schottky electrode.
Step 408 prepares field plate, and extend on dielectric layer on the unlapped Schottky electrode of dielectric layer.
Compared with the embodiment of the present invention one, the embodiment of the present invention three provide field-effect diode by introduce dielectric layer and
Field plate improves the breakdown reverse voltage of the field-effect diode.
The technical principle that above are only presently preferred embodiments of the present invention and used.The present invention is not limited to spies described here
Determine embodiment, the various significant changes that can carry out for a person skilled in the art, readjust and substitute all without departing from
Protection scope of the present invention.Therefore, although being described in further detail by above example to the present invention, this hair
It is bright to be not limited only to above example, without departing from the inventive concept, other more equivalence enforcements can also be included
Example, and the scope of the present invention is determined by the scope of the claims.
Claims (7)
1. a kind of field-effect diode, which is characterized in that including：
Substrate；
Channel layer, the channel layer are located at the substrate；
First barrier layer, first barrier layer are located on the channel layer；
Etching barrier layer, the etching barrier layer are located on first barrier layer；
Second barrier layer, second barrier layer are located on the etching barrier layer；
Mask layer, the mask layer are located on second barrier layer；
Groove, the groove is located within second barrier layer and the mask layer, and the bottom of the groove terminates at institute
State the interface of the second barrier layer and the etching barrier layer；
Cathode, the cathode are located on second barrier layer；
Anode, the anode is by being located at Schottky electrode in the groove and outside the groove and positioned at second potential barrier
Anode ohmic contact electrode phase short circuit on layer is formed；
The material of second barrier layer is aluminum gallium nitride, the mass percent of the aluminium component of second barrier layer from top to bottom by
It is decrescence small；
The shape of the groove is inverted trapezoidal.
2. field-effect diode according to claim 1, which is characterized in that the cathode and anode ohmic contact electricity
The material of pole is any one of titanium, aluminium, nickel or gold or at least two combination, and the Schottky electrode is single-layer or multi-layer gold
Belong to, the metal is any one of nickel, platinum or aluminium or at least two combination.
3. field-effect diode according to claim 1, which is characterized in that further include：
Barrier layer is carried on the back, for the back of the body barrier layer between the substrate and the channel layer, the material of the back of the body barrier layer is p-type
Gallium nitride or p-type aluminum gallium nitride.
4. a kind of production method of field-effect diode, which is characterized in that including：
Substrate is provided；
Channel layer, the first barrier layer, etching barrier layer, the second barrier layer and mask layer are sequentially prepared in the substrate；
Cathode and anode ohmic contact electrode are sequentially prepared on second barrier layer；
Groove, and institute are prepared within the second barrier layer and mask layer between the cathode and anode ohmic contact electrode
The bottom for stating groove terminates at the interface of second barrier layer and the etching barrier layer；
Schottky electrode is prepared on the groove, the Schottky electrode contacts electrode phase short circuit with the anode ohmic；
The material of second barrier layer is aluminum gallium nitride, the mass percent of the aluminium component of second barrier layer from top to bottom by
It is decrescence small；
The shape of the groove is inverted trapezoidal.
5. the production method of field-effect diode according to claim 4, which is characterized in that in the cathode and the sun
Groove is prepared within the second barrier layer between the Ohm contact electrode of pole, and the bottom of the groove terminates at second potential barrier
The interface of layer and the etching barrier layer, including：
It determines to need the region to form groove using photoetching technique；
Removing described needs to form the mask layer in the region of groove；
Thermal oxide is carried out to second barrier layer；
The second barrier layer to form the region of groove is needed to erode by described using wet etch techniques, form groove.
6. the production method of field-effect diode according to claim 5, which is characterized in that the temperature of the thermal oxide is
500-700 degrees Celsius.
7. the production method of field-effect diode according to claim 5, which is characterized in that the wet etch techniques are used
The liquid arrived is potassium hydroxide, and the time of corrosion is 30-60 minutes.
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| CN204067372U (en) * | 2013-12-27 | 2014-12-31 | 广州吉日嘉禾电子科技发展有限公司 | A kind of heterostructure rectifier diode |
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| CN204067372U (en) * | 2013-12-27 | 2014-12-31 | 广州吉日嘉禾电子科技发展有限公司 | A kind of heterostructure rectifier diode |
| CN104241400A (en) * | 2014-09-05 | 2014-12-24 | 苏州捷芯威半导体有限公司 | Field effect diode and manufacturing method thereof |
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