CN204067372U - A kind of heterostructure rectifier diode - Google Patents
A kind of heterostructure rectifier diode Download PDFInfo
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- CN204067372U CN204067372U CN201320872366.9U CN201320872366U CN204067372U CN 204067372 U CN204067372 U CN 204067372U CN 201320872366 U CN201320872366 U CN 201320872366U CN 204067372 U CN204067372 U CN 204067372U
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Abstract
The utility model relates to rectifier diode, is specifically related to a kind of heterostructure rectifier diode.It comprises the substrate, resilient coating, small gap material epitaxial loayer, wide-band gap material epitaxial loayer, the groove that is provided with on wide-band gap material epitaxial loayer that are arranged in order, at the Schottky electrode that the upper surface of wide-band gap material epitaxial loayer is provided with two Ohmic electrodes and is connected with an Ohmic electrode in two Ohmic electrodes, Schottky electrode extends from the upper surface of broad stopband material epitaxial layers and is filled in groove.In the utility model, the wide-band gap material epitaxial loayer be positioned under Schottky electrode is very thin, cause the two-dimensional electron gas of this part heterojunction boundary low compared with other positions, and Schottky electrode can exhaust two-dimensional electron gas completely, and anode voltage when being a bit larger tham zero volt diode open, thus make this diode have the cut-in voltage being a bit larger tham zero volt.Heterostructure rectifier diode structure of the present utility model is simple, stable performance, and can obtain low turn-on voltage.
Description
Technical field
The utility model relates to rectifier diode, more specifically, relates to a kind of heterostructure rectifier diode.
Background technology
In modern society, rectifier is applied more and more extensive in daily life, and relate to the numerous areas such as high voltage supply, electric energy management, factory automation and motor vehicle power-distribution management, rectifier diode is part indispensable in these applications.In recent years, have high frequency, high-power, low power consumption characteristic Schottky diode compared with the devices such as PN junction diode, more and more noticeable with the performance advantage of its uniqueness.
Someone proposes a kind of field effect Schottky diode (FESBD) at present, and this diode has that electric conduction forces down, recovery time is short, reverse breakdown voltage high.The Schottky(Schottky of this device) the two contact structures of electrode employing are to obtain low cut-in voltage, and low Schottky barrier metal is Al/Ti alloy; High Schottky barrier metal is Pt.Ohmic(ohm) electrode material is Al/Ti/Au alloy, achieves the cut-in voltage lower than 0.1V, and obtains the reverse breakdown voltage higher than 400V.This FESBD operation principle is as follows: (1) when a forward bias is applied, produce two-dimensional electron gas (2DEG) at AlGaN/GaN heterojunction interface, forward current, from low Schottky barrier metal starting flow to Ohmic electrode, therefore has the characteristic that cut-in voltage is lower; (2) when a reverse bias is applied, be turned off from low Schottky barrier metal starting flow to the electric current of Ohmic electrode, reason is the effect of high Schottky barrier electrode to AlGaN/GaN heterojunction.
Also has a kind of Schottky-Ohmic composite structure AlGaN/GaN diode (SOCFED) in addition.This device structurally with injected the enhancement mode diode-like that realizes by fluoride plasma under grid seemingly, first at the Si(silicon of high resistant) Grown GaN(gallium nitride) resilient coating, then the GaN epitaxial layer of grow thick 1 μm and the AlGaN layer of 30nm, again by RIE(Reactive Ion Etching, reactive ion etching) to Selective implantation fluoride plasma in AlGaN layer, finally form two electrodes, one of them is Schottky-Ohmic composite construction electrode, and another is Ohmic electrode.Schottky electrode in composite construction electrode is positioned at the top of fluoride plasma, and is connected with another Ohmic electrode in structure.This process employs fluorine anion in AlGaN layer to realize exhausting completely of Schottky electrode pair AlGaN/GaN heterojunction with two-dimensional electron gas, finally obtain the cut-in voltage close to 0 volt, and higher than the puncture voltage of 200V.
The identical point of above-mentioned two kinds of diode implementation methods is the control actions that all make use of Schottky electrode pair heterojunction interface two-dimensional electron gas conducting channel, and compared with traditional Schottky diode, above-mentioned two kinds of diodes have lower cut-in voltage.But in element manufacturing, during employing two Schottky barrier electrode, technical process is more complicated, and can cause the damage of material and the instability of performance when adopting fluoride plasma to inject.As can be seen here, while realizing low turn-on voltage, how simplifying manufacture craft, protection semiconductor surface pattern, is a problem being worth inquiring into.
Utility model content
The utility model, for overcoming at least one defect (deficiency) described in above-mentioned prior art, provides the heterostructure rectifier diode that a kind of manufacture craft is simple, have low turn-on voltage.
For solving the problems of the technologies described above, the technical solution of the utility model is as follows:
A kind of heterostructure rectifier diode, comprise the substrate, resilient coating, small gap material epitaxial loayer, the wide-band gap material epitaxial loayer that are arranged in order, also be included in the groove be provided with in described wide-band gap material epitaxial loayer, at the Schottky electrode that the upper surface of wide-band gap material epitaxial loayer is provided with two Ohmic electrodes and is connected with one of them Ohmic electrode in two Ohmic electrodes, described Schottky electrode extends from the upper surface of broad stopband material epitaxial layers and is filled in groove.In the utility model, the wide-band gap material epitaxial loayer be positioned under Schottky electrode is very thin, cause the two-dimensional electron gas of this part heterojunction boundary low compared with other positions, and Schottky electrode can exhaust two-dimensional electron gas completely, and anode voltage when being a bit larger tham zero volt diode open, thus make this diode have the cut-in voltage being a bit larger tham zero volt.
As the preferred scheme of one, described groove carries out secondary epitaxy growth by mask and is formed, it to be located on ground floor wide-band gap material epitaxial loayer and to be arranged in second layer wide-band gap material epitaxial loayer, described wide-band gap material epitaxial loayer is double-layer structure, comprise the ground floor wide-band gap material epitaxial loayer formed by vapor phase epitaxial growth and the second layer wide-band gap material epitaxial loayer formed by selective area growth method, described ground floor wide-band gap material epitaxial loayer and second layer wide-band gap material epitaxial loayer are the material epitaxy of same composition.Heterostructure rectifier diode material epitaxial layers is included in resilient coating, small gap material epitaxial loayer, ground floor wide-band gap material epitaxial loayer, second layer wide-band gap material epitaxial loayer that substrate grows successively.
As the preferred scheme of one, described groove is formed in wide-band gap material epitaxial loayer by etching, described wide-band gap material epitaxial loayer is the Rotating fields by vapor phase epitaxial growth, have the wide-band gap material epitaxial loayer that one deck is very thin under groove, the material epitaxy Rotating fields of described heterojunction rectifier diode is included in resilient coating, small gap material epitaxial loayer, wide-band gap material epitaxial loayer that substrate grows successively.
As the preferred scheme of one, two Ohmic electrodes lay respectively at two sides of groove.
As the preferred scheme of one, the thickness of described small gap material epitaxial loayer is 1 μm to 10 μm.
As the preferred scheme of one, described buffer layer thickness is 20nm to 3 μm.
As the preferred scheme of one.The degree of depth of described groove is 15nm to 30nm, and wide-band gap material epitaxy layer thickness is 5nm to 10nm under groove or under Schottky electrode.
As the preferred scheme of one, described wide-band gap material epitaxial loayer and small gap material epitaxial loayer form the heterostructure with two-dimensional electron gas; Any one in the heterostructures such as described wide-band gap material epitaxial loayer/small gap material epitaxial loayer is AlGaN/GaN structure sheaf, InAlGaN/GaN structure sheaf, AlInN/GaN structure sheaf, AlGaAs/GaAs structure sheaf, AlPGaAs/GaAs structure sheaf, GaPAs/GaAs structure sheaf, AlInP/InP structure sheaf, AlAsInP/InP structure sheaf can form the heterostructure of two-dimensional electron gas.
Compared with prior art, the beneficial effect of technical solutions of the utility model is:
Heterostructure rectifier diode structure of the present utility model is simple, stable performance, and can obtain low turn-on voltage.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of heterostructure rectifier diode specific embodiment 1 in the utility model.
Fig. 2 is the semi-finished product structure figure mono-in the heterostructure rectifier diode preparation process of specific embodiment 1.
Fig. 3 is the semi-finished product structure figure bis-in the heterostructure rectifier diode preparation process of specific embodiment 1.
Fig. 4 is the semi-finished product structure figure tri-in the heterostructure rectifier diode preparation process of specific embodiment 1.
Fig. 5 is the semi-finished product structure figure tetra-in the heterostructure rectifier diode preparation process of specific embodiment 1.
Fig. 6 is the semi-finished product structure figure five in the heterostructure rectifier diode preparation process of specific embodiment 1.
The product that the heterostructure rectifier diode preparation method that Fig. 7 is specific embodiment 1 is formed.
Fig. 8 is the structural representation of a kind of heterostructure rectifier diode specific embodiment 2 in the utility model.
Fig. 9 is the semi-finished product structure figure mono-in the heterostructure rectifier diode preparation process of specific embodiment 2.
Figure 10 is the semi-finished product structure figure bis-in the heterostructure rectifier diode preparation process of specific embodiment 2.
Figure 11 is the semi-finished product structure figure tri-in the heterostructure rectifier diode preparation process of specific embodiment 2.
The product that the heterostructure rectifier diode preparation method that Figure 12 is specific embodiment 2 is formed.
Embodiment
Accompanying drawing, only for exemplary illustration, can not be interpreted as the restriction to this patent;
In order to better the present embodiment is described, some parts of accompanying drawing have omission, zoom in or out, and do not represent the size of actual product;
To those skilled in the art, in accompanying drawing, some known features and explanation thereof may be omitted is understandable.
In description of the present utility model, it will be appreciated that, orientation or the position relationship of the instruction such as term " side " are based on orientation shown in the drawings or position relationship, only the utility model and simplified characterization for convenience of description, instead of the device of instruction or hint indication or element must have specific orientation, with specific azimuth configuration and operation, therefore can not be interpreted as restriction of the present utility model.In addition, term " first ", " second " only for describing object, and can not be interpreted as the quantity of instruction or hint relative importance or implicit indicated technical characteristic.Thus, one or more these features can be expressed or impliedly be comprised to the feature of " first ", " second " of restriction.In description of the present utility model, except as otherwise noted, the implication of " multiple " is two or more.
In description of the present utility model, it should be noted that, unless otherwise clearly defined and limited, term " installation ", " connection " should be interpreted broadly, and such as, can be fixedly connected with, also can be removably connect, or connect integratedly; Can be mechanical connection, also can be electrical connection; Can be directly be connected, also can be indirectly connected by intermediary, the connection of two element internals can be said.For the ordinary skill in the art, concrete condition above-mentioned term can be understood at concrete meaning of the present utility model.
Below in conjunction with drawings and Examples, the technical solution of the utility model is described further.
Embodiment 1
As shown in Figure 1, a kind of heterostructure rectifier diode in this specific embodiment, comprise the substrate 1 be arranged in order, resilient coating 2, small gap material epitaxial loayer 3, ground floor wide-band gap material epitaxial loayer 4, second layer wide-band gap material epitaxial loayer 6, also be included in the groove be provided with in wide-band gap material epitaxial loayer, two Ohmic electrodes 7 are provided with at the upper surface of wide-band gap material epitaxial loayer, 8 and and two Ohmic electrodes 7, the Schottky electrode 9 that one of them Ohmic electrode in 8 connects, Schottky electrode 9 extends from the upper surface of broad stopband material epitaxial layers and is filled in groove.
In the utility model, described wide-band gap material epitaxial loayer and small gap material epitaxial loayer 3 can form the heterostructure with two-dimensional electron gas, the wide-band gap material epitaxial loayer be positioned under Schottky electrode 9 is very thin, cause the two-dimensional electron gas of this part heterojunction boundary low compared with other positions, and Schottky electrode 9 can exhaust two-dimensional electron gas completely, and anode voltage when being a bit larger tham zero volt diode open, thus make this diode have the cut-in voltage being a bit larger tham zero volt.When being applied to the voltage in composite construction on Schottky electrode 9 and being reverse biased, this diode is in cut-off state; When being applied to the voltage on composite construction Schottky electrode 9 and being the forward voltage being greater than cut-in voltage, this diode current flow, and cut-in voltage is close to zero volt.During concrete making, under the degree of depth of groove and groove, the thickness of wide-band gap material epitaxial loayer can be determined by adjustment, to make anode voltage closer to zero volt and rectifier diode characteristic optimization.
The heterostructure rectifier diode of this specific embodiment adopts Schottky-Ohmic(Schottky-ohm) control of composite construction realization to conducting channel, realize low cut-in voltage.When being applied to the voltage on Schottky electrode 9 and being reverse biased, Schottky electrode 9 can exhaust two-dimensional electron gas, and close conducting channel, this heterostructure rectifier diode is in cut-off state; When being applied to the voltage on Schottky electrode 9 and being the forward bias of being a bit larger tham cut-in voltage, two-dimensional electron gas conducting channel is opened, and form conductive path, this heterostructure rectifier diode conducting, and cut-in voltage is close to zero volt.
In specific implementation process, wide-band gap material epitaxial loayer can adopt following structure to realize:
As shown in Figure 1, wide-band gap material epitaxial loayer comprises the ground floor wide-band gap material epitaxial loayer 4 formed by vapor phase epitaxial growth and the second layer wide-band gap material epitaxial loayer 6 formed by selective area growth method, and substrate 1, resilient coating 2, small gap material epitaxial loayer 3, ground floor wide-band gap material epitaxial loayer 4, second layer wide-band gap material epitaxial loayer 6 are arranged in order.Ground floor broad stopband epitaxial loayer 4 and second layer wide-band gap material epitaxial loayer 6 are the material epitaxy of same composition.Preferably, groove carries out secondary epitaxy growth by mask and is formed, and it to be located on ground floor wide-band gap material epitaxial loayer 4 and to be arranged in second layer wide-band gap material epitaxial loayer 6.
In specific implementation process, two Ohmic electrodes 7,8 lay respectively at two sides of groove, are convenient to Schottky electrode 9 and are connected with one of them Ohmic electrode and are convenient to Schottky electrode 9 and extend in groove.
In specific implementation process, the growth of resilient coating 2 and thickness change according to the difference of substrate 1 and small gap material epitaxial loayer 3, and preferably, its thickness is 20nm to 3 μm.
In specific implementation process, the thickness of small gap material epitaxial loayer 3 arranges concrete thickness according to the difference of substrate 1 material and resilient coating 2 material, and preferably, its thickness is 1 μm to 10 μm.
In specific implementation process, the thickness of wide-band gap material epitaxial loayer arranges concrete thickness according to the difference of epitaxial material, and preferably, the degree of depth of groove is 15nm to 30nm, and wide-band gap material epitaxy layer thickness is 5nm to 10nm under groove or under Schottky electrode.
In specific implementation process, the heterostructure of wide-band gap material epitaxial loayer/small gap material epitaxial loayer composition can adopt in AlGaN/GaN structure sheaf, InAlGaN/GaN structure sheaf, AlInN/GaN structure sheaf, AlGaAs/GaAs structure sheaf, AlPGaAs/GaAs structure sheaf, GaPAs/GaAs structure sheaf, AlInP/InP structure sheaf, AlAsInP/InP structure sheaf that any one can form the heterostructure of two-dimensional electron gas.
In specific implementation process, substrate 1 can adopt Sapphire Substrate, Si substrate, SiC substrate, GaN substrate etc.
In specific implementation process, two Ohmic electrodes 7,8 can adopt the Multi-layer metal alloy forming ohmic contact with the material of heterostructure.
Below, the preparation method of the heterostructure rectifier diode in this specific embodiment is described by concrete example in detail.In the preparation method of this example, substrate 1 adopts Si substrate 10, resilient coating 2 can adopt AlN/GaN resilient coating 20, small gap material epitaxial loayer 3 adopts GaN epitaxial layer 30, ground floor wide-band gap material epitaxial loayer 4 adopts ground floor AlGaN layer 40, and second layer wide-band gap material epitaxial loayer 6 adopts second layer AlGaN layer 60.Concrete preparation method is as follows:
A, as shown in Figure 2, on Si substrate 10, utilize MOCVD(vapor phase epitaxial growth) method, first growing AIN/GaN resilient coating 20, then controls growth conditions growing GaN epitaxial loayer 30 thereon, last growth regulation one deck AlGaN layer 40.
B, as shown in Figure 3, in described ground floor AlGaN layer 40, first PECVD(plasma enhanced chemical vapor deposition method is utilized) method deposit SiO2 masking film, then in ground floor AlGaN layer 40, after litho pattern, wet etching removes part SiO2 masking film, retains the SiO2 masking film 50 formed on groove and Schottky electrode contact area.
C, as shown in Figures 4 and 5, the part outside the SiO2 masking film 50 in ground floor AlGaN layer 40, utilizes the method for selective area growth, uses MOCVD growth and ground floor AlGaN layer 40 to have the second layer AlGaN layer 60 of same composition.Finally utilize wet etching to remove SiO2 masking film 50, form groove 13.
D, as shown in Figure 6, by the method for evaporation, the second layer AlGaN layer 60 of diauxic growth is formed two sides that the Ohmic electrodes such as Ti/Al/Ni/Au or Ti/Al/Pt/Au 7 and 8, two Ohmic electrodes 7 and 8 that can form ohmic contact with AlGaN/GaN lay respectively at groove 13 successively.
E, as shown in Figure 7, the Schottky electrode 9 that selectivity evaporation is connected with two Ohmic electrodes 7 or 8, the material of described Schottky electrode 9 is can form metal or the alloy of good Schottky contacts with AlGaN/GaN, such as Ni/Au or Pt/Au, thus final formation Schottky-Ohmic composite structure AlGaN/GaN diode.
Masking film 50 wherein can adopt the dielectric materials such as SiO2, SiN.
Embodiment 2
As different from Example 1, as shown in Figure 8, wide-band gap material epitaxial loayer 11 is a Rotating fields to the present embodiment, and groove 13 is formed on wide-band gap material epitaxial loayer 11 by etching.Under such configuration, groove 13 is formed by lithographic method.
Below, the preparation method of the heterostructure rectifier diode in this specific embodiment is described by concrete example in detail.In the preparation method of this example, substrate 1 adopts Si substrate 10, and resilient coating 2 adopts AlN/GaN resilient coating 20, and small gap material epitaxial loayer 3 adopts GaN epitaxial layer 30, and wide-band gap material epitaxial loayer 11 adopts AlGaN layer 110.
Concrete preparation method is as follows:
A, as shown in Figure 9, on Si substrate 10, utilize MOCVD method, first growing AIN/GaN resilient coating 20, then control growth conditions growing GaN epitaxial loayer 30 thereon, finally grow AlGaN layer 110.
B, as shown in Figure 10, the masking film 12 that AlGaN layer 110 is formed AlGaN layer 110 outputs etching window, utilizes dry method or wet etching to form groove 13.
C, as shown in figure 11, by the method for evaporation, AlGaN layer 110 forms two Ohmic electrodes 7 and 8 successively, and described Ohmic electrode 7 and 8 lays respectively at the both sides of groove 13.Ohmic electrode is can form the Multi-layer metal alloys such as Ti/Al/Ni/Au, Ti/Al/Pt/Au of ohmic contact with AlGaN/GaN.
D, as shown in figure 12, the Schottky electrode 9 that selectivity evaporation is connected with Ohmic electrode 7 or 8, the material of described Schottky electrode 9 is can form metal or the alloy of good Schottky contacts with AlGaN/GaN, such as Ni/Au or Pt/Au, thus final formation Schottky-Ohmic composite structure AlGaN/GaN rectifier diode.
Masking film 12 wherein can adopt the dielectric material such as photoresist, Ni metal level.
The corresponding same or analogous parts of same or analogous label;
Describe in accompanying drawing position relationship for only for exemplary illustration, the restriction to this patent can not be interpreted as;
Obviously, above-described embodiment of the present utility model is only for the utility model example is clearly described, and is not the restriction to execution mode of the present utility model.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all execution modes.All do within spirit of the present utility model and principle any amendment, equivalent to replace and improvement etc., within the protection range that all should be included in the utility model claim.
Claims (4)
1. a heterostructure rectifier diode, comprise the substrate, resilient coating, small gap material epitaxial loayer, the wide-band gap material epitaxial loayer that are arranged in order, also be included in the groove that described wide-band gap material epitaxial loayer is provided with, at the Schottky electrode that the upper surface of wide-band gap material epitaxial loayer is provided with two Ohmic electrodes and is connected with one of them Ohmic electrode in two Ohmic electrodes, it is characterized in that, described Schottky electrode extends from the upper surface of broad stopband material epitaxial layers and is filled in groove;
The thickness of described small gap material epitaxial loayer is 1 μm to 10 μm;
The thickness of described resilient coating is 20nm to 3 μm;
The degree of depth of groove is 15nm to 30nm, and wide-band gap material epitaxy layer thickness is 5nm to 10nm under groove or under Schottky electrode;
Described wide-band gap material epitaxial loayer and small gap material epitaxial loayer form the heterostructure with two-dimensional electron gas; The heterostructure that described wide-band gap material epitaxial loayer/small gap material epitaxial loayer is InAlGaN/GaN structure sheaf, any one in AlInN/GaN structure sheaf, AlGaAs/GaAs structure sheaf, AlPGaAs/GaAs structure sheaf, GaPAs/GaAs structure sheaf, AlInP/InP structure sheaf, AlAsInP/InP structure sheaf can form two-dimensional electron gas.
2. heterostructure rectifier diode according to claim 1, it is characterized in that, described groove is formed by the method two secondary growth of selective area growth, and groove to be located on ground floor wide-band gap material epitaxial loayer and to be arranged in second layer wide-band gap material epitaxial loayer; The material material epitaxy structure of described heterojunction rectifier diode is included in resilient coating, small gap material epitaxial loayer, ground floor wide-band gap material epitaxial loayer, second layer wide-band gap material epitaxial loayer that substrate grows successively.
3. heterostructure rectifier diode according to claim 1, it is characterized in that, described groove is formed in wide-band gap material epitaxial loayer by etching, have the wide-band gap material epitaxial loayer that one deck is very thin under groove, the material epitaxy Rotating fields of described heterojunction rectifier diode is included in resilient coating, small gap material epitaxial loayer, wide-band gap material epitaxial loayer that substrate grows successively.
4. heterostructure rectifier diode according to claim 1, is characterized in that, two Ohmic electrodes lay respectively at two sides of groove.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105185841A (en) * | 2015-04-07 | 2015-12-23 | 苏州捷芯威半导体有限公司 | Field effect diode and manufacturing method therefor |
| CN107527952A (en) * | 2017-08-28 | 2017-12-29 | 电子科技大学 | A kind of multilayer anode diode of Nano Fin grid structures |
| WO2021217875A1 (en) * | 2020-04-27 | 2021-11-04 | 华南理工大学 | Gan/two-dimensional ain heterojunction rectifier on silicon substrate and preparation method therefor |
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2013
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105185841A (en) * | 2015-04-07 | 2015-12-23 | 苏州捷芯威半导体有限公司 | Field effect diode and manufacturing method therefor |
| CN105185841B (en) * | 2015-04-07 | 2018-06-12 | 苏州捷芯威半导体有限公司 | A kind of field-effect diode and preparation method thereof |
| CN107527952A (en) * | 2017-08-28 | 2017-12-29 | 电子科技大学 | A kind of multilayer anode diode of Nano Fin grid structures |
| CN107527952B (en) * | 2017-08-28 | 2021-02-12 | 电子科技大学 | Hybrid anode diode with Nano-Fin gate structure |
| WO2021217875A1 (en) * | 2020-04-27 | 2021-11-04 | 华南理工大学 | Gan/two-dimensional ain heterojunction rectifier on silicon substrate and preparation method therefor |
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