CN107527952A - A kind of multilayer anode diode of Nano Fin grid structures - Google Patents
A kind of multilayer anode diode of Nano Fin grid structures Download PDFInfo
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- CN107527952A CN107527952A CN201710749529.7A CN201710749529A CN107527952A CN 107527952 A CN107527952 A CN 107527952A CN 201710749529 A CN201710749529 A CN 201710749529A CN 107527952 A CN107527952 A CN 107527952A
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- grid
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- multilayer anode
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- SDGKUVSVPIIUCF-UHFFFAOYSA-N 2,6-dimethylpiperidine Chemical compound CC1CCCC(C)N1 SDGKUVSVPIIUCF-UHFFFAOYSA-N 0.000 claims description 20
- 229950005630 nanofin Drugs 0.000 claims description 19
- 229910002704 AlGaN Inorganic materials 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- -1 LaLuO3 Inorganic materials 0.000 claims description 2
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 150000001875 compounds Chemical class 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims description 2
- HYXGAEYDKFCVMU-UHFFFAOYSA-N scandium(III) oxide Inorganic materials O=[Sc]O[Sc]=O HYXGAEYDKFCVMU-UHFFFAOYSA-N 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000012239 silicon dioxide Nutrition 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 14
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 238000000034 method Methods 0.000 abstract description 7
- 238000005516 engineering process Methods 0.000 abstract description 6
- 230000004888 barrier function Effects 0.000 abstract description 3
- 238000000137 annealing Methods 0.000 abstract description 2
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000002347 injection Methods 0.000 abstract description 2
- 239000007924 injection Substances 0.000 abstract description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 9
- 229910002601 GaN Inorganic materials 0.000 description 8
- 230000001276 controlling effect Effects 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 2
- 238000005036 potential barrier Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Thin Film Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The invention belongs to technical field of semiconductors, is related to a kind of multilayer anode diode of Nano Fin grid structures.Grid is the structure of Nano Fin shapes in the present invention, and it is to insert finger-like to etch barrier layer by equidistant or not equidistant mode, realizes below grid groove between grid groove the modulated a kind of new technology of two-dimensional electron gas in hetero-junctions.Beneficial effects of the present invention：Realize two-dimensional electron gas part depletion under grid and then realize the purpose of enhancement type channel, the method of the invention two-dimensional electron gas control accuracy is higher, device performance is more stable, can avoid because influence of the pyroprocess such as annealing, gate medium growth technique to injection ion distribution during flow；The device properties such as the cut-in voltage of diode of the present invention, conducting resistance, reverse leakage can be adjusted by changing the bar number of FIN shape structures and the width of FIN shape structures.
Description
Technical field
The invention belongs to power semiconductor technologies field, is related to a kind of multilayer anode diode of Nano-Fin grid structure.
Background technology
Gallium nitride (GaN) is third generation semiconductor material with wide forbidden band, its chemical property stabilization, high temperature resistant, corrosion-resistant, very
It is suitable for making radioresistance, high frequency, high-power and High Density Integration electronic device.All these excellent properties, well
The shortcomings that compensate for the semi-conducting materials such as preceding two generations Si and GaAs inherently, so as to the study frontier as rapid development.
As third generation wide band gap semiconductor device, GaN base Schottky-barrier diode (SBD) power device has resistance to height
The good characteristics such as warm, high pressure resistant and conducting resistance is small, have significant advantage in terms of power device.Traditional GaN hetero-junctions
Schottky diode is influenceed by Schottky contact barrier, and its cut-in voltage is larger and its voltage endurance capability depends on schottky metal
With the Metals-semiconductor contacts between GaN semiconductors.Larger cut-in voltage can increase the positive working loss of device, therefore
Develop it is a kind of with low positive cut-in voltage, high reversely pressure-resistant high-performance GaN power diodes have for practical application and weigh
Want meaning.
The content of the invention
In view of the above-mentioned problems, the present invention proposes a kind of Nano-Fin shapes grid structure multilayer anode diode (such as Fig. 1), lead to
Cross the groove etched structure into FIN (fin) shape of grid, the two-dimensional electron gas below part depletion grid groove, and then realize Two-dimensional electron
The enhanced purpose of gas channel.This kind of technology can be by changing the width of FIN shape etched portions, and spacing and depth are realized pair
The accuracy controlling of two-dimensional electron gas under grid, can not only realize the requirement of the low turn-on voltage of diode, be etched simultaneously for utilizing
For grid groove technology to prepare enhanced HEMT, the technology is equally applicable, i.e., changes above-mentioned controllable FIN structures according to the demand of reality
Parameter, to realize to the accuracy controllings of HEMT threshold voltages.
A kind of Nano-Fin shapes grid structure multilayer anode diode operation principle proposed by the present invention is：Source electrode, drain electrode with
Device active region surface forms Ohmic contact as electric current input, output port.Between source drain, pass through local etching
AlGaN layer prepares Nano-Fin shape grid structures (such as Fig. 2), and device grids are made in this structure.This Nano-Fin shape grid knot
Structure forms (9) by the strip AlGaN layer of multiple reservations, enhanced to realize by way of part depletion two-dimensional electron gas
AlGaN/GaN devices.When grid is not added with voltage, because the part of local 2-DEG below grid is very low, small part electronics can
With by the way that regarding as between source drain to turn on, and device is off state.When give grid apply a sufficiently high positive voltage
When, potential barrier is reduced, and a large amount of electronics just be able to can be turned on, device is in opening by the potential barrier between source drain.
To achieve the above object, the present invention adopts the following technical scheme that：
A kind of Nano-Fin structures multilayer anode diode, including hetero-junctions above substrate 1, substrate, grid, source electrode and
Drain electrode 6, the hetero-junctions are formed by the AlGaN layer 4 of GaN layer 2 and the top of GaN layer 2, the grid be located at hetero-junctions top and
Schottky contacts are formed therewith, and the source electrode and drain electrode 6 are located at the upper surface both sides of AlGaN layer 4, and source electrode and AlGaN layer respectively
Form Ohmic contact；The upper surface of AlGaN layer 4 between the drain electrode 6 and grid has passivation layer 7；It is characterized in that：The grid
The Nano-Fins structures 9 extremely formed by local etching AlGaN layer, per a piece of Nano-Fin successively along device while and water
Plane and the vertical third dimension direction arrangement of vertical plane, are deposited with the Nano-Fins structures and form Schottky contacts therewith
Metallic film.
It is preferred that Nano-Fin shape grid grooves are parallel to source drain line direction.
It is preferred that insert dielectric layer between the grid and three-dimensional more slot grid structures.
It is preferred that the dielectric layer be Al2O3, SiO2, Si3N4, Ta2O5, MgO, Sc2O3, LaLuO3,
TiO2 is therein one or more compound.
Full quarter of the solution of the present invention compared to conventional art (such as Chinese patent of Application No. 201511003565.6)
Erosion and partial etching method realize that the difference of enhancement type channel is that the former remains the source-drain electrode line side of two-dimensional electron gas
To continuity, the purpose for the arrangement is that device will be caused while integrally there is enhancement type channel, in grid (anode) application
The two-dimensional electron gas of raceway groove realizes enhancement type channel than traditional full etching, partial etching or by ion implanting during forward voltage
Device possesses faster resume speed；Compared to Zhou Q, Jin Y, Mou J, et al. " Over 1.1kV breakdown
low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode[C]”
IEEE,International Symposium on Power Semiconductor Devices&IC's.2015:369-372
The present invention need not etch the regulation and control that barrier layer realizes two-dimensional electron gas, institute by accurate control section during technological design
It is simpler in the method for the present invention for realizing two-dimensional electron gas regulation and control.In addition, its etching interface defect of device of the present invention
Separated with Nano-Fin current lead-through raceway grooves, eliminate scattering process of the etching interface defect to two-dimensional electron gas, improve device
Two-dimensional electron gas mobility in part Nano-Fin conducting channels, reduce device on-resistance；Two dimension is realized compared to ion implanting
The mode of electron gas regulation and control, the method for the invention two-dimensional electron gas control accuracy is higher, device performance is more stable, can avoid
Because influence of the pyroprocess such as annealing, gate medium growth technique to injection ion distribution during flow；Institute of the present invention
Stating the device properties such as the cut-in voltage of diode, conducting resistance, reverse leakage can be by changing the bar number and FIN of FIN shape structures
The width of shape structure is adjusted.
Beneficial effects of the present invention are：The present invention proposes a kind of Nano-Fin shapes grid structure multilayer anode diode,
On the premise of realizing device enhancement mode and having compared with high withstand voltage, the invention reduces the etching area of AlGaN layer, reduces material
The continuity of damage and AlGaN layer is not destroyed, so device has larger current density, higher electron transfer
Rate and relatively low conducting resistance, meanwhile, Nano-Fin shape grid structures have the strip AlGaN layers (such as Fig. 3) of more reservations, can be with
Retain the bar number of AlGaN layer by controlling, two-dimensional electron gas (such as Fig. 4) under width and depth accuracy controlling grid, realize low unlatching
Voltage, threshold value are controllable.
Brief description of the drawings
Fig. 1 is device of the present invention along source drain line direction cross-sectional structure schematic diagram；
The dimensional structure diagram for not including ohmic metal when Fig. 2 is source drain line direction of the present invention；
Fig. 3 is the top view that the present invention carries Nano-Fin shape grid structure multilayer anode diodes
Fig. 4 is the distribution map of Two-dimensional electron under depression angle in structure of the present invention；
Fig. 5 is the dimensional structure diagram of device of the present invention；
Fig. 6 is device profile structural representation of the present invention.
Wherein, 1 substrate, 2 be GaN layer, and 3 be 2-DEG, and 4 be AlGaN layer, and 5 be Nano-Fin shape grid grooves, and 6 drain, 7
It is schottky metal for passivation layer, 8.
Embodiment
In Summary to the present invention have been described in detail, will not be repeated here.
Claims (4)
1. a kind of multilayer anode diode of Nano-Fin grid structure, including hetero-junctions above substrate (1), substrate, grid, source
Pole and drain electrode (6), the hetero-junctions are formed by the AlGaN layer (4) above GaN layer (2) and GaN layer (2), and the grid is positioned at different
The matter side of tying and Schottky contacts are formed therewith, the source electrode and drain electrode (6) are located at AlGaN layer (4) upper surface both sides respectively, and
Source electrode forms Ohmic contact with AlGaN layer；AlGaN layer (4) upper surface of the drain electrode (6) between grid has passivation layer
(7)；It is characterized in that：The grid is the Nano-Fins structures (9) formed by local etching AlGaN layer, per a piece of
Nano-Fin arranges along device third dimension direction simultaneously vertical with horizontal plane and vertical plane successively, the Nano-Fins structures
On be deposited with therewith formed Schottky contacts metallic film (8).
A kind of 2. multilayer anode diode of Nano-Fin grid structure according to claim 1, it is characterised in that：The gold
Belong to film (8) and source electrode ohm short circuit.
A kind of 3. multilayer anode diode of Nano-Fin grid structure according to claim 2, it is characterised in that：The grid
There is dielectric layer between hetero-junctions.
A kind of 4. multilayer anode diode of Nano-Fin grid structure according to claim 3, it is characterised in that：The electricity
The material that dielectric layer uses is therein a kind of or more for Al2O3, SiO2, Si3N4, Ta2O5, MgO, Sc2O3, LaLuO3, TiO2
That plants is compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710749529.7A CN107527952B (en) | 2017-08-28 | 2017-08-28 | Hybrid anode diode with Nano-Fin gate structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710749529.7A CN107527952B (en) | 2017-08-28 | 2017-08-28 | Hybrid anode diode with Nano-Fin gate structure |
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| Publication Number | Publication Date |
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| CN107527952A true CN107527952A (en) | 2017-12-29 |
| CN107527952B CN107527952B (en) | 2021-02-12 |
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| CN201710749529.7A Active CN107527952B (en) | 2017-08-28 | 2017-08-28 | Hybrid anode diode with Nano-Fin gate structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843226A (en) * | 2021-02-02 | 2022-08-02 | 北京大学 | Method for integrating MIS-HEMT device and GaN hybrid anode diode and application |
| CN116741869A (en) * | 2023-05-23 | 2023-09-12 | 苏州科技大学 | Device for improving responsivity of terahertz detector |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02504570A (en) * | 1987-08-14 | 1990-12-20 | リージェンツ オブ ザ ユニバーシティ オブ ミネソタ | Electronic and photoelectric devices that utilize the characteristics of light holes |
| US20070066020A1 (en) * | 2004-01-23 | 2007-03-22 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
| CN103227199A (en) * | 2013-04-19 | 2013-07-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-performance semiconductor electronic device |
| CN103730491A (en) * | 2012-10-11 | 2014-04-16 | 三星电子株式会社 | High electron mobility transistor and method of driving the same |
| CN204067372U (en) * | 2013-12-27 | 2014-12-31 | 广州吉日嘉禾电子科技发展有限公司 | A kind of heterostructure rectifier diode |
| CN105322016A (en) * | 2014-08-05 | 2016-02-10 | 株式会社东芝 | Semiconductor device |
-
2017
- 2017-08-28 CN CN201710749529.7A patent/CN107527952B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02504570A (en) * | 1987-08-14 | 1990-12-20 | リージェンツ オブ ザ ユニバーシティ オブ ミネソタ | Electronic and photoelectric devices that utilize the characteristics of light holes |
| US20070066020A1 (en) * | 2004-01-23 | 2007-03-22 | International Rectifier Corporation | III-nitride current control device and method of manufacture |
| CN103730491A (en) * | 2012-10-11 | 2014-04-16 | 三星电子株式会社 | High electron mobility transistor and method of driving the same |
| CN103227199A (en) * | 2013-04-19 | 2013-07-31 | 中国科学院苏州纳米技术与纳米仿生研究所 | High-performance semiconductor electronic device |
| CN204067372U (en) * | 2013-12-27 | 2014-12-31 | 广州吉日嘉禾电子科技发展有限公司 | A kind of heterostructure rectifier diode |
| CN105322016A (en) * | 2014-08-05 | 2016-02-10 | 株式会社东芝 | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114843226A (en) * | 2021-02-02 | 2022-08-02 | 北京大学 | Method for integrating MIS-HEMT device and GaN hybrid anode diode and application |
| CN114843226B (en) * | 2021-02-02 | 2024-05-17 | 北京大学 | Method for integrating MIS-HEMT device and GaN hybrid anode diode and application |
| CN116741869A (en) * | 2023-05-23 | 2023-09-12 | 苏州科技大学 | Device for improving responsivity of terahertz detector |
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Effective date of registration: 20230221 Address after: 310051 1-1201, No. 6, Lianhui street, Xixing street, Binjiang District, Hangzhou City, Zhejiang Province Patentee after: Hangzhou Xinmai Semiconductor Technology Co.,Ltd. Address before: 611731, No. 2006, West Avenue, hi tech West District, Sichuan, Chengdu Patentee before: University of Electronic Science and Technology of China |