CN108054088A - N-type silicon chip Boron diffusion method, crystal silicon solar energy battery and preparation method thereof - Google Patents
N-type silicon chip Boron diffusion method, crystal silicon solar energy battery and preparation method thereof Download PDFInfo
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- CN108054088A CN108054088A CN201711348116.4A CN201711348116A CN108054088A CN 108054088 A CN108054088 A CN 108054088A CN 201711348116 A CN201711348116 A CN 201711348116A CN 108054088 A CN108054088 A CN 108054088A
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 131
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 131
- 238000009792 diffusion process Methods 0.000 title claims abstract description 120
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 99
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 99
- 239000010703 silicon Substances 0.000 title claims abstract description 99
- 239000013078 crystal Substances 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 84
- 229910052757 nitrogen Inorganic materials 0.000 claims description 33
- 238000000151 deposition Methods 0.000 claims description 20
- 230000008021 deposition Effects 0.000 claims description 18
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 18
- 238000010792 warming Methods 0.000 claims description 18
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 16
- 239000001301 oxygen Substances 0.000 claims description 16
- 229910052760 oxygen Inorganic materials 0.000 claims description 16
- 239000007789 gas Substances 0.000 claims description 15
- 235000008216 herbs Nutrition 0.000 claims description 9
- 210000002268 wool Anatomy 0.000 claims description 9
- 238000000137 annealing Methods 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
- 150000001875 compounds Chemical class 0.000 abstract description 16
- 239000002184 metal Substances 0.000 abstract description 6
- 230000009467 reduction Effects 0.000 abstract description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000001737 promoting effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application provides a kind of N-type silicon chip Boron diffusion method, crystal silicon solar energy battery and preparation method thereof, it is spread using boron twice, and the doping concentration of second of boron diffusion is more than the doping concentration of first time boron diffusion namely is expanded using light for the first time, second of re-spread mode forms boron diffusion.Due to being expanded using light for the first time, junction depth is deeper, and the doping concentration of boron is relatively low, Ohmic contact is bad, but it is compound to reduce diffusion layer, and second re-spread, junction depth is shallower, and the doping concentration of boron is higher, ensures that silicon chip surface contacts to form good Ohmic contact with metal electrode.Namely N-type silicon chip Boron diffusion method provided by the invention ensures that cell contact resistance Rs is good in the case where reduction diffusion is compound.
Description
Technical field
The present invention relates to solar cell manufacture technology field more particularly to a kind of N-type silicon chip Boron diffusion method, crystalline silicons
Solar cell and preparation method thereof.
Background technology
Conventional fossil fuel is increasingly depleted, and in existing sustainable energy, solar energy is undoubtedly a kind of most clear
Clean, most universal and most potential alternative energy source.At present, in all solar cells, silicon solar cell is to obtain greatly
One of solar cell that commerce is promoted, this is because silicon materials have extremely abundant reserves, while silicon in the earth's crust
Solar cell compares other kinds of solar cell, there is excellent electric property and mechanical performance, silicon solar cell
In photovoltaic art in occupation of consequence.Therefore, the silicon solar cell for researching and developing high performance-price ratio has become photovoltaic enterprise of various countries
One of main direction of studying of industry.
N-type crystal silicon battery becomes height due to the advantages that its minority carrier life time is high, dim light responds, light decay is low, anti-PID abilities are strong
Imitate the ideal substrate of crystal silicon battery.N-type cell generally spreads the quality that boron diffusion junctions are promoted as its emitter junction using boron, reduces
Its is compound, is one of important channel for promoting battery efficiency.
Therefore, boron diffusing qualities how to be promoted as urgent problem to be solved.
The content of the invention
In view of this, the present invention provides a kind of N-type silicon chip Boron diffusion method, crystal silicon solar energy battery and its making side
Method, to solve the problems, such as that boron diffusing qualities are relatively low in the prior art.
To achieve the above object, the present invention provides following technical solution：
A kind of Boron diffusion method of N-type silicon chip, including：
Silicon chip after making herbs into wool is cleaned is put into diffusion furnace tube, is warming up to the first temperature；
First time deposition is carried out, the diffusion of the first boron is formed in the silicon chip surface；
Second temperature is warming up to, and carries out knot, the second temperature is higher than first temperature；
It carries out second to deposit, the diffusion of the second boron is formed in the silicon chip surface；
Annealing cooling, and the silicon chip is taken out out of described diffusion furnace tube；
Wherein, on the silicon chip surface, the doping concentration of the second boron diffusion is more than the doping of first boron diffusion
Concentration, and the depth of second boron diffusion is less than the depth of first boron diffusion.
Preferably, the progress first time deposition forms the diffusion of the first boron in the silicon chip surface, specifically includes：
Nitrogen, oxygen are passed through in the diffusion furnace tube and takes boron source nitrogen, carries out first time deposition, the first time sinks
The product time is 20min-60min, including endpoint value；
Wherein, the gas flow of the nitrogen is 9000sccm；
The gas flow of oxygen is 50sccm-100sccm, including endpoint value；
The boron source nitrogen gas flow of taking is 50sccm-150sccm, including endpoint value.
Preferably, described second of deposition of progress, forms the diffusion of the second boron in the silicon chip surface, specifically includes：
Nitrogen, oxygen are passed through in the diffusion furnace tube and takes boron source nitrogen, second is carried out and deposits, described second heavy
The product time is 10min-20min, including endpoint value；
Wherein, the gas flow of the nitrogen is 9000sccm；
The gas flow of oxygen is 100sccm-200sccm, including endpoint value；
The boron source nitrogen gas flow of taking is 200sccm-400sccm, including endpoint value.
Preferably, it is described making herbs into wool is cleaned after silicon chip be put into diffusion furnace tube, be warming up to the first temperature, specifically include：
Silicon chip after making herbs into wool is cleaned is put into diffusion furnace tube；
Nitrogen is passed through, nitrogen gas flow is 9000sccm；
According to the rate that heating rate is 10 DEG C/min, 850 DEG C -900 DEG C are warming up to, including endpoint value.
Preferably, it is described to be warming up to second temperature, and knot is carried out, the second temperature is higher than first temperature, tool
Body includes：
Nitrogen is passed through, the nitrogen gas flow is 9000sccm；
According to the rate that heating rate is 10 DEG C/min, 950 DEG C -1000 DEG C are warming up to, including endpoint value；
And nitrogen and oxygen 30min-70min progress knots are passed through, including endpoint value；
Wherein, nitrogen gas flow is 9000sccm, and oxygen gas flow is 500sccm-1000sccm, including endpoint
Value.
Preferably, the annealing cooling, and the silicon chip is taken out out of described diffusion furnace tube, it specifically includes：
It is passed through nitrogen to cool down, nitrogen gas flow is 9000sccm, and rate of temperature fall is 10 DEG C/min；
Treat that temperature is down to 800 DEG C in the diffusion furnace tube, by the silicon chip extracting.
The present invention also provides a kind of production methods of crystal silicon solar energy battery, including boron diffusing step, the boron diffusion
Step is using the Boron diffusion method described in any of the above one.
The present invention also provides a kind of crystal silicon solar energy battery, using crystal silicon solar energy battery making side recited above
Legal system is formed.
It can be seen via above technical scheme that N-type silicon chip Boron diffusion method provided by the invention, crystal silicon solar energy battery
And preparation method thereof, it is spread using boron twice, and the doping concentration of second of boron diffusion is dense more than the doping of first time boron diffusion
It spends namely is expanded using light for the first time, second of re-spread mode forms boron and spread.Due to being expanded using light for the first time, junction depth is deeper,
The doping concentration of boron is relatively low, and Ohmic contact is bad, but it is compound to reduce diffusion layer, and second re-spread, and junction depth is shallower, and boron is mixed
Miscellaneous concentration is higher, ensures that silicon chip surface contacts to form good Ohmic contact with metal electrode.Namely N-type silicon provided by the invention
Piece Boron diffusion method ensures that cell contact resistance Rs is good in the case where reduction diffusion is compound.
Based on the Boron diffusion method of above-mentioned offer, the present invention also provides a kind of crystal silicon solar energy battery and its making sides
Method, due to boron diffusion junctions Quality advance, the performance of crystal silicon solar energy battery can also be promoted therewith.
Description of the drawings
It in order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention, for those of ordinary skill in the art, without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of N-type silicon chip Boron diffusion method flow diagram provided by the invention；
Fig. 2 is the boron atom distribution map obtained using N-type silicon chip Boron diffusion method provided by the invention.
Specific embodiment
Just as described in the background section, it is one of effective way of efficiency for promoting solar cell to promote boron diffusion.
And the boron diffusion junctions that Boron diffusion method of the prior art is formed are second-rate, seriously affected the efficiency of battery.
Inventor has found that it is that boron of generally use diffuses to form transmitting in the prior art the reason for the above situation occur
Knot.Namely knot of primary depositing；If diffusion concentration is higher, compound larger, the open-circuit voltage of solar cell is spread
Voc is relatively low, and the photoelectric conversion efficiency for causing solar cell is relatively low；And if diffusion concentration is relatively low, the hair of solar cell
Contact resistance Rs is higher after emitter-base bandgap grading is sintered with surface electrode, and the efficiency of solar cell is relatively low.
Based on this, the present invention provides a kind of N-type silicon chip Boron diffusion method, including：
Silicon chip after making herbs into wool is cleaned is put into diffusion furnace tube, is warming up to the first temperature；
First time deposition is carried out, the diffusion of the first boron is formed in the silicon chip surface；
Second temperature is warming up to, and carries out knot, the second temperature is higher than first temperature；
It carries out second to deposit, the diffusion of the second boron is formed in the silicon chip surface；
Annealing cooling, and the silicon chip is taken out out of described diffusion furnace tube；
Wherein, on the silicon chip surface, the doping concentration of the second boron diffusion is more than the doping of first boron diffusion
Concentration, and the depth of second boron diffusion is less than the depth of first boron diffusion.
N-type silicon chip Boron diffusion method provided by the invention is spread using boron twice, and the doping concentration of second of boron diffusion
Expand more than the doping concentration of first time boron diffusion namely using light for the first time, second of re-spread mode forms boron diffusion.Due to
Being expanded using light for the first time, junction depth is deeper, and the doping concentration of boron is relatively low, and Ohmic contact is bad, but it is compound to reduce diffusion layer, the
Secondary re-spread, junction depth is shallower, and the doping concentration of boron is higher, ensures that silicon chip surface contacts to form good ohm and connect with metal electrode
It touches.Namely N-type silicon chip Boron diffusion method provided by the invention ensures cell contact resistance Rs in the case where reduction diffusion is compound
Well.
Below in conjunction with the attached drawing in the embodiment of the present invention, the technical solution in the embodiment of the present invention is carried out clear, complete
Site preparation describes, it is clear that described embodiment is only part of the embodiment of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment belongs to the scope of protection of the invention.
Fig. 1 is referred to, Fig. 1 is N-type silicon chip Boron diffusion method flow chart provided in an embodiment of the present invention；The N-type silicon chip
Boron diffusion method, including：
S101：Silicon chip after making herbs into wool is cleaned is put into diffusion furnace tube, is warming up to the first temperature；
Silicon chip after making herbs into wool is cleaned in the present embodiment is put into diffusion furnace tube；Nitrogen is passed through, nitrogen gas flow is
9000sccm；According to the rate that heating rate is 10 DEG C/min, 850 DEG C -900 DEG C are warming up to, including endpoint value.
It should be noted that in order to avoid being aoxidized in high temperature of the silicon chip surface in diffusion furnace tube, it is necessary in diffusion furnace
The gas being not easy under inert gas or high temperature with silicon chip reaction is passed through in pipe, to dispel the oxygen and air in diffusion furnace tube,
Silicon chip is protected.Based on silicon wafer to manufacture cost consideration, the cost of nitrogen is relatively low, therefore, is passed through in the present embodiment optionally
Gas be nitrogen.
S102：First time deposition is carried out, the diffusion of the first boron is formed in the silicon chip surface；
Until after the temperature in diffusion furnace tube rises to predetermined temperature namely first temperature, in the diffusion furnace tube
It being passed through nitrogen, oxygen and takes boron source nitrogen, carry out first time deposition, the first time sedimentation time is 20min-60min, including
Endpoint value；Wherein, the gas flow of the nitrogen is 9000sccm；The gas flow of oxygen is 50sccm-100sccm, including
Endpoint value；The boron source nitrogen gas flow of taking is 50sccm-150sccm, including endpoint value.
The purpose of this step is that the boron of relatively small amount is deposited in silicon chip surface, forms light diffusion in silicon chip surface, avoids boron
Diffusion concentration is higher, generates larger compound.It should be noted that although the doping concentration of boron is relatively low in this step, tie
It is deeper, so as to form deeper emitter junction, basis is provided to be subsequently formed Ohmic contact.
S103：Second temperature is warming up to, and carries out knot, the second temperature is higher than first temperature；
It should be noted that after silicon chip surface deposits boron element, entered in order to accelerate boron atom inside silicon chip,
The embodiment of the present invention also needs to increase knot step after first time deposition.The knot step specifically includes：
Nitrogen is passed through in the diffusion furnace tube, the nitrogen gas flow is 9000sccm；
According to the rate that heating rate is 10 DEG C/min, 950 DEG C -1000 DEG C are warming up to, including endpoint value；
And nitrogen and oxygen 30min-70min progress knots are passed through, including endpoint value；
Wherein, nitrogen gas flow is 9000sccm, and oxygen gas flow is 500sccm-1000sccm, including endpoint
Value.
For N-type semiconductor, Auger compound (auger recombination) service life of minority carrier (hole) and majority carrier
(electronics) concentration square is inversely proportional.In heavy doping, electron concentration is very big, then the Auger recombination lifetimes of minority carrier
Numerical value very little, i.e. auger recombination cause the service life of minority carrier to substantially reduce.
And the boron atom for being deposited on silicon chip surface for the first time is advanced to inside silicon chip by high temperature in the present embodiment, and swash
It is living.At this point, since the doping concentration of first time deposition boron is relatively low so that the boron atom doping concentration of activation is relatively low in silicon chip, into
And generate that Auger is compound less, it ensure that the service life of minority carrier.
S104：It carries out second to deposit, the diffusion of the second boron is formed in the silicon chip surface；
Due to first time boron diffusion Auger it is compound relatively low, boron diffusion concentration is relatively low, can not be subsequently formed metal electricity
Good Ohmic contact is formed between pole.Second has also been carried out in the embodiment of the present invention to deposit, and forms the boron diffusion of high concentration.
Second deposition primarily forms that junction depth is shallower in the present embodiment, but the boron diffusion that boron doping concentration is higher, to ensure
Silicon chip surface contacts to form good Ohmic contact with metal electrode, reduces contact resistance Rs, improves the conversion of solar cell
Efficiency.
As long as the boron diffusion weight of deposition namely second of boron expand the boron diffusion ratio of second of deposition for the first time in the present embodiment
Scattered boron doping concentration is higher than the boron doping concentration that first time boron is spread, and specific implementation is not limited in the present embodiment,
Can improve diffusion temperature, increase boron source or extend boron diffusion time etc., in order to ensure that silicon wafer to manufacture is imitated in the present embodiment
Rate, optionally, the process conditions of second of deposition are：
Nitrogen, oxygen are passed through in the diffusion furnace tube and takes boron source nitrogen, second is carried out and deposits, described second heavy
The product time is 10min-20min, including endpoint value；
Wherein, the gas flow of the nitrogen is 9000sccm；
The gas flow of oxygen is 100sccm-200sccm, including endpoint value；
The boron source nitrogen gas flow of taking is 200sccm-400sccm, including endpoint value.
S105：Annealing cooling, and the silicon chip is taken out out of described diffusion furnace tube；
The specific process step of annealing cooling is not limited in the present embodiment, optionally, nitrogen is passed through and cools down, nitrogen gas
Body flow is 9000sccm, and rate of temperature fall is 10 DEG C/min；Treat that temperature is down to 800 DEG C in the diffusion furnace tube, by the silicon chip
It takes out.
Nitrogen can also be substituted using other gases, as long as silicon chip can be protected not oxidized.
It N-type silicon chip Boron diffusion method in the embodiment of the present invention is provided, is spread using boron twice, and the diffusion of second boron is mixed
Miscellaneous concentration is more than the doping concentration of first time boron diffusion namely is expanded using light for the first time, and second of re-spread mode forms boron expansion
It dissipates.Due to being expanded using light for the first time, junction depth is deeper, and the doping concentration of boron is relatively low, and Ohmic contact is bad, but can reduce diffusion layer
Compound, second re-spread, and junction depth is shallower, and the doping concentration of boron is higher, ensures that silicon chip surface contacts to be formed well with metal electrode
Ohmic contact.Namely N-type silicon chip Boron diffusion method provided by the invention ensures that battery connects in the case where reduction diffusion is compound
The resistance Rs that gets an electric shock is good.
The embodiment of the present invention also provides a kind of crystal silicon solar energy battery production method, including boron diffusing step, the boron
Diffusing step is the Boron diffusion method for employing different levels of doping twice described in above example.
The embodiment of the present invention also provides a kind of crystal silicon solar energy battery, using above-mentioned crystal silicon solar energy battery making side
Method is formed, and the good boron diffusion profiles of compound relatively low but contact resistance Rs are obtained as shown in Fig. 2, abscissa is by testing detection
The depth of etching silicon wafer, ordinate are the doping concentration of boron atom, from figure 2 it can be seen that in silicon chip surface (namely abscissa
Smaller position), the doping concentration of boron is higher, as junction depth is deeper (namely abscissa larger position), boron doping concentration compared with
It is low, so as to reduce diffusion it is compound in the case of ensure that cell contact resistance Rs is good.In corresponding diagram 2, second of deposition of use
The boron diffusion main contributions of formation go out in its junction depth for 0-0.1 μm, are deposited compared with first time, improve boron doping concentration, protected
Good ohm contact performance is demonstrate,proved, so as to improve the efficiency of solar cell.
It should be noted that each embodiment in this specification is described by the way of progressive, each embodiment weight
Point explanation is all difference from other examples, and just to refer each other for identical similar part between each embodiment.
The foregoing description of the disclosed embodiments enables professional and technical personnel in the field to realize or use the present invention.
A variety of modifications of these embodiments will be apparent for those skilled in the art, it is as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, it is of the invention
The embodiments shown herein is not intended to be limited to, and is to fit to and the principles and novel features disclosed herein phase one
The most wide scope caused.
Claims (8)
1. a kind of Boron diffusion method of N-type silicon chip, which is characterized in that including：
Silicon chip after making herbs into wool is cleaned is put into diffusion furnace tube, is warming up to the first temperature；
First time deposition is carried out, the diffusion of the first boron is formed in the silicon chip surface；
Second temperature is warming up to, and carries out knot, the second temperature is higher than first temperature；
It carries out second to deposit, the diffusion of the second boron is formed in the silicon chip surface；
Annealing cooling, and the silicon chip is taken out out of described diffusion furnace tube；
Wherein, on the silicon chip surface, the doping concentration of the second boron diffusion is more than the doping concentration of first boron diffusion,
And the depth of the second boron diffusion is less than the depth of first boron diffusion.
2. the Boron diffusion method of N-type silicon chip according to claim 1, which is characterized in that the progress first time deposition,
The silicon chip surface forms the diffusion of the first boron, specifically includes：
Nitrogen, oxygen are passed through in the diffusion furnace tube and takes boron source nitrogen, first time deposition is carried out, when the first time deposits
Between for 20min-60min, including endpoint value；
Wherein, the gas flow of the nitrogen is 9000sccm；
The gas flow of oxygen is 50sccm-100sccm, including endpoint value；
The boron source nitrogen gas flow of taking is 50sccm-150sccm, including endpoint value.
3. the Boron diffusion method of N-type silicon chip according to claim 2, which is characterized in that described second of deposition of progress,
The silicon chip surface forms the diffusion of the second boron, specifically includes：
Nitrogen, oxygen are passed through in the diffusion furnace tube and takes boron source nitrogen, second is carried out and deposits, when depositing for described second
Between for 10min-20min, including endpoint value；
Wherein, the gas flow of the nitrogen is 9000sccm；
The gas flow of oxygen is 100sccm-200sccm, including endpoint value；
The boron source nitrogen gas flow of taking is 200sccm-400sccm, including endpoint value.
4. the Boron diffusion method of N-type silicon chip according to claim 1, which is characterized in that it is described making herbs into wool is cleaned after silicon
Piece is put into diffusion furnace tube, is warming up to the first temperature, is specifically included：
Silicon chip after making herbs into wool is cleaned is put into diffusion furnace tube；
Nitrogen is passed through, nitrogen gas flow is 9000sccm；
According to the rate that heating rate is 10 DEG C/min, 850 DEG C -900 DEG C are warming up to, including endpoint value.
5. the Boron diffusion method of N-type silicon chip according to claim 4, which is characterized in that it is described to be warming up to second temperature, and
Knot is carried out, the second temperature is higher than first temperature, specifically includes：
Nitrogen is passed through, the nitrogen gas flow is 9000sccm；
According to the rate that heating rate is 10 DEG C/min, 950 DEG C -1000 DEG C are warming up to, including endpoint value；
And nitrogen and oxygen 30min-70min progress knots are passed through, including endpoint value；
Wherein, nitrogen gas flow is 9000sccm, and oxygen gas flow is 500sccm-1000sccm, including endpoint value.
6. the Boron diffusion method of the N-type silicon chip according to claim 1-5 any one, which is characterized in that the annealing drop
Temperature, and the silicon chip is taken out out of described diffusion furnace tube, it specifically includes：
It is passed through nitrogen to cool down, nitrogen gas flow is 9000sccm, and rate of temperature fall is 10 DEG C/min；
Treat that temperature is down to 800 DEG C in the diffusion furnace tube, by the silicon chip extracting.
A kind of 7. production method of crystal silicon solar energy battery, including boron diffusing step, which is characterized in that the boron diffusing step
Using the Boron diffusion method described in claim 1-6 any one.
8. a kind of crystal silicon solar energy battery, which is characterized in that made of the crystal silicon solar energy battery described in claim 7
Method makes to be formed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711348116.4A CN108054088A (en) | 2017-12-15 | 2017-12-15 | N-type silicon chip Boron diffusion method, crystal silicon solar energy battery and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711348116.4A CN108054088A (en) | 2017-12-15 | 2017-12-15 | N-type silicon chip Boron diffusion method, crystal silicon solar energy battery and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108054088A true CN108054088A (en) | 2018-05-18 |
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| CN111739794A (en) * | 2020-06-30 | 2020-10-02 | 浙江晶科能源有限公司 | Boron diffusion method, solar cell and manufacturing method thereof |
| CN113314640A (en) * | 2021-05-26 | 2021-08-27 | 横店集团东磁股份有限公司 | Diffusion method of P-type passivated contact solar cell |
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