CN107863418A - A kind of N-type solar cell Boron diffusion method - Google Patents
A kind of N-type solar cell Boron diffusion method Download PDFInfo
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- CN107863418A CN107863418A CN201711062871.6A CN201711062871A CN107863418A CN 107863418 A CN107863418 A CN 107863418A CN 201711062871 A CN201711062871 A CN 201711062871A CN 107863418 A CN107863418 A CN 107863418A
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- silicon chip
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 57
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 57
- 238000009792 diffusion process Methods 0.000 title claims abstract description 35
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 79
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 79
- 239000010703 silicon Substances 0.000 claims abstract description 79
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 75
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims abstract description 40
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims abstract description 30
- 239000000243 solution Substances 0.000 claims abstract description 28
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 24
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000005297 pyrex Substances 0.000 claims abstract description 16
- 239000011259 mixed solution Substances 0.000 claims abstract description 14
- 235000008216 herbs Nutrition 0.000 claims abstract description 8
- 210000002268 wool Anatomy 0.000 claims abstract description 8
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 4
- 229960002050 hydrofluoric acid Drugs 0.000 claims 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 2
- 229910052739 hydrogen Inorganic materials 0.000 claims 2
- 239000001257 hydrogen Substances 0.000 claims 2
- 239000002253 acid Substances 0.000 claims 1
- 239000010436 fluorite Substances 0.000 claims 1
- 238000000034 method Methods 0.000 abstract description 15
- 239000013078 crystal Substances 0.000 description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000005457 optimization Methods 0.000 description 6
- 238000007796 conventional method Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 238000006197 hydroboration reaction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Sustainable Energy (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of N-type solar cell Boron diffusion method, comprise the following steps：1) N-type silicon chip after making herbs into wool is spread using high temperature boron source to obtain P+ emitter stages；2) react 40 60S at room temperature in a solution of hydrofluoric acid, remove the Pyrex on N-type silicon chip surface；3) N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；4) N-type silicon chip after pure water is cleaned, which is put into NaOH solution, reacts 2 5mins, the sheet resistance of N-type silicon chip is lifted 8 20ohm/sq；5) N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 1 2mi ns, removes metal ion and backside oxide layer；6) cleaned and dried up with pure water.This method can uniform lift expand silicon chip surface sheet resistance after boron, effectively solve the low situation of surface concentration after the diffusion of N-type cell boron, and improve junction depth.
Description
Technical field
The present invention relates to solar cell fabricating technology field, more particularly to a kind of N-type solar cell boron to spread
Method.
Background technology
21 century energy crisis getting worse, it is extremely urgent to find the non-renewable new energies such as replacement oil, coal.Solar energy
As a kind of Green Sustainable energy of clean and effective, there is vast potential for future development.Present crystal silicon battery is solar energy
The product of GENERATION MARKET most main flow, so it is our instantly most critical tasks to develop more preferable solar energy crystal silicon battery technology.
The core texture of conventional crystalline silicon battery is P-N junction.P-N junction has two kinds of preparation methods：One kind is enterprising in P-type silicon piece
P-type battery is made in row phosphorus diffusion, and one kind is to carry out boron diffusion in N-type silicon chip to obtain N-type cell.The technology of p-type battery at present
Renewal nearly reaches bottleneck, and N-type silicon chip has longer minority carrier life time than P-type silicon piece, and without boron oxygen to photo attenuation phenomenon,
It is very big that N-type cell technology increasingly updates emergence, development potentiality.The formation of N-type crystal silicon battery P-N junction has three kinds of technologies at present, high
The diffusion of warm boron source, the thermal diffusion of spin coating boron source and the slurry diffusion of silk-screen printing boron, main flow are the diffusion of high temperature boron source, but no matter which kind of skill
Art can all form top layer silica, and silica, which inhales boron row's phosphorus, causes after diffusion silicon chip surface boron atom concentration low and PN junction knot
The problem of deep, cause the high even interface auger recombination aggravation of contact resistance.So as to have impact on the raising of battery efficiency.
The content of the invention
The present invention proposes a kind of N-type solar cell Boron diffusion method, to solve silicon chip after boron diffusion in the prior art
The problem of surface boron atomic concentration is low.
In order to solve the above problems, the present invention provides following technical scheme：
A kind of N-type solar cell Boron diffusion method, comprises the following steps：
1) N-type silicon chip after making herbs into wool is spread using high temperature boron source to obtain P+ emitter stages；
2) react 40-60S at room temperature in a solution of hydrofluoric acid, remove the Pyrex on N-type silicon chip surface；
3) N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；
4) N-type silicon chip after pure water is cleaned, which is put into NaOH solution, reacts 2-5mins, lifts the sheet resistance of N-type silicon chip
8-20ohm/sq；
5) N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 1-2mins, removes metal
Ion and backside oxide layer；
6) cleaned and dried up with pure water.
Optionally, in the step 1), the sheet resistance of the N-type silicon chip after boron diffusion is 60-80ohm/sq.
Optionally, the mass percent concentration of the hydrofluoric acid solution in the step 2) is 8%-10%.
Optionally, the mass percent concentration of the NaOH solution in the step 4) is 4%-6%.
Optionally, the mass percent concentration of the hydrofluoric acid in hydrofluoric acid/hydrochloric acid mixed solution in the step 5) is
3.5%-7%, the mass percent concentration of hydrochloric acid is 3%-6%.
The present invention is allowed to compared with prior art, the advantages of following and actively effect be present due to using above technical scheme
Fruit：
1) N-type solar cell Boron diffusion method provided by the invention, low concentration boron is eliminated by the shallow forms of corrosion in top layer
Atomic surface, high concentration boron atom surface is formed, optimize Ohmic contact；
2) N-type solar cell Boron diffusion method provided by the invention, low concentration boron is eliminated by the shallow forms of corrosion in top layer
Atomic surface, PN junction depth can be reduced, optimize the open-circuit voltage of crystal silicon battery, further lift N-type crystal silicon battery conversion efficiency.
Brief description of the drawings
Fig. 1 is the flow chart of N-type solar cell Boron diffusion method provided in an embodiment of the present invention.
Embodiment
N-type solar cell Boron diffusion method proposed by the present invention is made further specifically below in conjunction with specific embodiment
It is bright.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted that accompanying drawing uses
Very simplified form and use non-accurately ratio, only to convenient, the lucidly aid illustration embodiment of the present invention mesh
's.
As shown in figure 1, the invention provides a kind of N-type solar cell Boron diffusion method, comprise the following steps：
S1:N-type silicon chip after making herbs into wool is spread using high temperature boron source to obtain P+ emitter stages；
S2:React 40-60S at room temperature in a solution of hydrofluoric acid, remove the Pyrex on N-type silicon chip surface；
S3:N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；
S4:N-type silicon chip after pure water is cleaned, which is put into NaOH solution, reacts 2-5mins, lifts the sheet resistance of N-type silicon chip
8-20ohm/sq；
S5:N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 1-2mins, removes metal
Ion and backside oxide layer；
S6:Cleaned and dried up with pure water.
N-type solar cell Boron diffusion method provided by the invention, low concentration boron original is eliminated by the shallow forms of corrosion in top layer
Sublist face forms high concentration boron atom surface optimization Ohmic contact, and reduce PN junction depth, optimization crystal silicon battery opens pressure, in terms of two
Lift N-type crystal silicon battery conversion efficiency.Simply and effectively solves the table caused by silica inhales hydroboration after boron spreads
Face boron atom concentration it is low with PN junction depth the problem of；Technique is simple simultaneously, needs not move through the processing of the nitration mixture such as hydrofluoric acid/nitric acid, is
Useless row and environment reduce pressure.
The present invention is further described below in conjunction with specific embodiment.
Embodiment 1
A kind of N-type solar cell Boron diffusion method is present embodiments provided, is comprised the following steps：
S1:N-type silicon chip after making herbs into wool is spread to obtain P+ emitter stages using high temperature boron source, the N-type silicon chip after boron diffusion
Sheet resistance is 64ohm/sq；
S2:React 40S at room temperature in the hydrofluoric acid solution that mass percent concentration is 10%, remove N-type silicon chip surface
Pyrex；
S3:N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；
S4:N-type silicon chip after pure water is cleaned, which is put into the NaOH solution that mass percent concentration is 4%, reacts
3.5mins, the sheet resistance of N-type silicon chip is set to lift 8ohm/sq；
S5:N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 2mins, remove metal from
Son and backside oxide layer；Wherein, the mass percent concentration of the hydrofluoric acid in hydrofluoric acid/hydrochloric acid mixed solution is 3.5%-7%,
The mass percent concentration of hydrochloric acid is 3%-6%；
S6:Cleaned and dried up with pure water.
The sheet resistance lifting 8ohm/sq of the N-type silicon chip obtained through the above method, it is known that its surface boron atomic concentration is had
Effect improves, in addition, after tested, the junction depth for the PN junction that this method obtains is 0.5 μm, the knot of the PN junction obtained relative to conventional method
For depth is 0.5-0.6 μm, this method can effectively reduce the junction depth of PN junction, optimization crystal silicon battery opens pressure, and N-type is lifted in terms of two
Crystal silicon battery conversion efficiency.
Embodiment 2
A kind of N-type solar cell Boron diffusion method is present embodiments provided, is comprised the following steps：
S1:N-type silicon chip after making herbs into wool is spread to obtain P+ emitter stages using high temperature boron source, the N-type silicon chip after boron diffusion
Sheet resistance is 72ohm/sq；
S2:React 50S at room temperature in the hydrofluoric acid solution that mass percent concentration is 9%, remove N-type silicon chip surface
Pyrex；
S3:N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；
S4:N-type silicon chip after pure water is cleaned, which is put into the NaOH solution that mass percent concentration is 5%, reacts 5mins,
The sheet resistance of N-type silicon chip is set to lift 20ohm/sq；
S5:N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 2mins, remove metal from
Son and backside oxide layer；Wherein, the mass percent concentration of the hydrofluoric acid in hydrofluoric acid/hydrochloric acid mixed solution is 3.5%-7%,
The mass percent concentration of hydrochloric acid is 3%-6%；
S6:Cleaned and dried up with pure water.
The sheet resistance lifting 20ohm/sq of the N-type silicon chip obtained through the above method, it is known that its surface boron atomic concentration carries significantly
Height, in addition, after tested, the junction depth for the PN junction that this method obtains is 0.38 μm, the junction depth of the PN junction obtained relative to conventional method
For 0.6 μm, this method can effectively reduce the junction depth of PN junction, optimization crystal silicon battery opens pressure, and N-type crystal silicon electricity is lifted in terms of two
Pond conversion efficiency.
Embodiment 3
A kind of N-type solar cell Boron diffusion method is present embodiments provided, is comprised the following steps：
S1:N-type silicon chip after making herbs into wool is spread to obtain P+ emitter stages using high temperature boron source, the N-type silicon chip after boron diffusion
Sheet resistance is 77ohm/sq；
S2:React 60S at room temperature in the hydrofluoric acid solution that mass percent concentration is 8%, remove N-type silicon chip surface
Pyrex；
S3:N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；
S4:N-type silicon chip after pure water is cleaned, which is put into the NaOH solution that mass percent concentration is 6%, reacts
2.5mins, the sheet resistance of N-type silicon chip is set to lift 13ohm/sq；
S5:N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 2mins, remove metal from
Son and backside oxide layer；Wherein, the mass percent concentration of the hydrofluoric acid in hydrofluoric acid/hydrochloric acid mixed solution is 3.5%-7%,
The mass percent concentration of hydrochloric acid is 3%-6%；
S6:Cleaned and dried up with pure water.
The sheet resistance lifting 13ohm/sq of the N-type silicon chip obtained through the above method, it is known that its surface boron atomic concentration carries significantly
Height, in addition, after tested, the junction depth for the PN junction that this method obtains is 0.43 μm, the junction depth of the PN junction obtained relative to conventional method
For 0.55-0.6 μm, this method can effectively reduce the junction depth of PN junction, optimization crystal silicon battery opens pressure, and N-type is lifted in terms of two
Crystal silicon battery conversion efficiency.
Embodiment 4
A kind of N-type solar cell Boron diffusion method is present embodiments provided, is comprised the following steps：
S1:N-type silicon chip after making herbs into wool is spread to obtain P+ emitter stages using high temperature boron source, the N-type silicon chip after boron diffusion
Sheet resistance is 77ohm/sq；
S2:React 50S at room temperature in the hydrofluoric acid solution that mass percent concentration is 10%, remove N-type silicon chip surface
Pyrex；
S3:N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；
S4:N-type silicon chip after pure water is cleaned, which is put into the NaOH solution that mass percent concentration is 5%, reacts
2.5mins, the sheet resistance of N-type silicon chip is set to lift 9ohm/sq；
S5:N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 1mins, remove metal from
Son and backside oxide layer；Wherein, the mass percent concentration of the hydrofluoric acid in hydrofluoric acid/hydrochloric acid mixed solution is 3.5%-7%,
The mass percent concentration of hydrochloric acid is 3%-6%；
S6:Cleaned and dried up with pure water.
The sheet resistance lifting 9ohm/sq of the N-type silicon chip obtained through the above method, it is known that its surface boron atomic concentration carries significantly
Height, in addition, after tested, the junction depth for the PN junction that this method obtains is 0.45 μm, the junction depth of the PN junction obtained relative to conventional method
For 0.5-0.6 μm, this method can effectively reduce the junction depth of PN junction, optimization crystal silicon battery opens pressure, and it is brilliant that N-type is lifted in terms of two
Silion cell conversion efficiency.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Scope.
Claims (5)
1. a kind of N-type solar cell Boron diffusion method, it is characterised in that comprise the following steps：
1) N-type silicon chip after making herbs into wool is spread using high temperature boron source to obtain P+ emitter stages；
2) react 40-60S at room temperature in a solution of hydrofluoric acid, remove the Pyrex on N-type silicon chip surface；
3) N-type silicon chip after removal Pyrex is cleaned with pure water, removes the hydrofluoric acid solution of remained on surface；
4) N-type silicon chip after pure water is cleaned, which is put into NaOH solution, reacts 2-5mins, the sheet resistance of N-type silicon chip is lifted 8-
20ohm/sq；
5) N-type silicon chip after sheet resistance is lifted, which is put into hydrofluoric acid/hydrochloric acid mixed solution, cleans 1-2mins, removes metal ion
And backside oxide layer；
6) cleaned and dried up with pure water.
2. N-type solar cell Boron diffusion method as claimed in claim 1, it is characterised in that in the step 1), boron diffusion
The sheet resistance of N-type silicon chip afterwards is 60-80ohm/sq.
3. N-type solar cell Boron diffusion method as claimed in claim 1 or 2, it is characterised in that the hydrogen in the step 2)
The mass percent concentration of fluorspar acid solution is 8%-10%.
4. N-type solar cell Boron diffusion method as claimed in claim 1 or 2, it is characterised in that in the step 4)
The mass percent concentration of NaOH solution is 4%-6%.
5. N-type solar cell Boron diffusion method as claimed in claim 1 or 2, it is characterised in that the hydrogen in the step 5)
The mass percent concentration of hydrofluoric acid in fluoric acid/hydrochloric acid mixed solution is 3.5%-7%, and the mass percent concentration of hydrochloric acid is
3%-6%.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767026A (en) * | 2018-06-11 | 2018-11-06 | 苏州宝澜环保科技有限公司 | A kind of novel silicon base photovoltaic cell and its manufacturing method |
| CN113990984A (en) * | 2021-10-26 | 2022-01-28 | 通威太阳能(金堂)有限公司 | Cleaning method of PERC crystalline silicon battery |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103314448A (en) * | 2010-09-03 | 2013-09-18 | 肖特太阳能股份公司 | Method for the wet-chemical etching of a highly doped semiconductor layer |
| CN104393112A (en) * | 2014-11-13 | 2015-03-04 | 苏州润阳光伏科技有限公司 | Method for solving problem of low surface concentration after boron diffusion |
-
2017
- 2017-11-02 CN CN201711062871.6A patent/CN107863418A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103314448A (en) * | 2010-09-03 | 2013-09-18 | 肖特太阳能股份公司 | Method for the wet-chemical etching of a highly doped semiconductor layer |
| CN104393112A (en) * | 2014-11-13 | 2015-03-04 | 苏州润阳光伏科技有限公司 | Method for solving problem of low surface concentration after boron diffusion |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108767026A (en) * | 2018-06-11 | 2018-11-06 | 苏州宝澜环保科技有限公司 | A kind of novel silicon base photovoltaic cell and its manufacturing method |
| CN113990984A (en) * | 2021-10-26 | 2022-01-28 | 通威太阳能(金堂)有限公司 | Cleaning method of PERC crystalline silicon battery |
| CN113990984B (en) * | 2021-10-26 | 2023-10-10 | 通威太阳能(金堂)有限公司 | Cleaning method of PERC crystalline silicon battery |
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