CN110265497A - A kind of N-shaped crystal-silicon solar cell of selective emitter and preparation method thereof - Google Patents
A kind of N-shaped crystal-silicon solar cell of selective emitter and preparation method thereof Download PDFInfo
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- CN110265497A CN110265497A CN201910578323.1A CN201910578323A CN110265497A CN 110265497 A CN110265497 A CN 110265497A CN 201910578323 A CN201910578323 A CN 201910578323A CN 110265497 A CN110265497 A CN 110265497A
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 43
- 239000010703 silicon Substances 0.000 title claims abstract description 43
- 238000002360 preparation method Methods 0.000 title claims abstract description 22
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052796 boron Inorganic materials 0.000 claims abstract description 24
- 230000008021 deposition Effects 0.000 claims abstract description 17
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000005297 pyrex Substances 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 14
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 235000008216 herbs Nutrition 0.000 claims abstract description 7
- 210000002268 wool Anatomy 0.000 claims abstract description 7
- 238000007650 screen-printing Methods 0.000 claims abstract description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000011521 glass Substances 0.000 claims abstract description 4
- 238000002161 passivation Methods 0.000 claims abstract description 4
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 4
- 239000011574 phosphorus Substances 0.000 claims abstract description 4
- YAIQCYZCSGLAAN-UHFFFAOYSA-N [Si+4].[O-2].[Al+3] Chemical group [Si+4].[O-2].[Al+3] YAIQCYZCSGLAAN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 14
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical group [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 4
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000001465 metallisation Methods 0.000 claims description 2
- 230000004888 barrier function Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 150000001875 compounds Chemical class 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 abstract description 3
- 239000002184 metal Substances 0.000 abstract description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011031 large-scale manufacturing process Methods 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- 102100028628 Bombesin receptor subtype-3 Human genes 0.000 description 1
- 101000695054 Homo sapiens Bombesin receptor subtype-3 Proteins 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 210000004209 hair Anatomy 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention discloses N-shaped crystal-silicon solar cell of a kind of selective emitter and preparation method thereof, method includes: one layer of the special pattern area deposition doped source rich in boron in silicon wafer；Silicon wafer after deposition boron source is subjected to high temperature propulsion and diffusion；Single side removes the Pyrex layer of silicon chip back side, while retaining positive Pyrex layer；The boron emitter at silicon chip back side and edge is removed, new making herbs into wool of laying equal stress on；Silicon chip back side phosphorus diffusion, and form selective back surface field；Front Pyrex layer and back side phosphorosilicate glass layer, front deposition of aluminium oxide silicon nitride reduced passivation resisting film, backside deposition silicon nitride passive film are removed in cleaning；Silk-screen printing front electrode and rear electrode.The present invention can be on the basis of without separately logical boron source, and boron selective emitter is realized in step diffusion, and the compound of Metal contact regions is greatly reduced, promote the open-circuit voltage of solar cell, improve the short wave response of battery, promote short circuit current, to effectively promote the photoelectric conversion efficiency of solar cell.
Description
Technical field
The invention belongs to photovoltaic technology field, and in particular to a kind of N-shaped crystal-silicon solar cell of selective emitter and
Preparation method.
Background technique
It constantly pursues higher photoelectric conversion efficiency and lower manufacturing cost is the eternal theme of photovoltaic industry.P at present
Type crystal-silicon solar cell occupies the absolute share in crystalline silicon market, but the more conventional p-type crystal silicon chip of N-shaped crystal silicon chip has
Minority carrier life time is high, no photo attenuation, the advantages that, there is more high-end improved efficiency space.The N-shaped crystal-silicon solar cell of preparation
And the dim light of component responds, temperature coefficient is low, has higher reliability.As the efficiency of N-shaped crystal-silicon solar cell is excellent
Gesture is more and more obvious, and the market share of N-shaped crystal-silicon solar cell will further improve.
The preparation method core of N-shaped crystal-silicon solar cell first is that the preparation of boron emitter, is generally adopted on the market at present
The method spread with BBR3 liquid source, the boron emitter of the method preparation is there are sheet resistance uniformity is difficult to control, metal electrode contact
The high problem of region composite, causes the open-circuit voltage of battery low, and fill factor is poor, significantly limits N-shaped efficiency of solar cell
Promotion, and boron emitter is difficult in p-type crystal-silicon solar cell commonly etching or the mode of laser doping
To form selective emitter.
Summary of the invention
To solve the above-mentioned problems, the present invention provides a kind of systems of the N-shaped crystal-silicon solar cell of selective emitter
Preparation Method promotes N-shaped efficiency of solar cell.
The technical solution of the present invention is as follows: a kind of preparation method of the N-shaped crystal-silicon solar cell of selective emitter, including
Following steps:
S1, the silicon wafer pretreatment and making herbs into wool for selecting N-shaped；
S2, one layer of the special pattern area deposition doped source rich in boron in silicon wafer；
S3, the silicon wafer after deposition boron source is subjected to high temperature propulsion and diffusion；
The Pyrex layer of S4, single side removal silicon chip back side, while retaining positive Pyrex layer, as later process
Mask blocks layer, protect positive p-n junction；
S5, the boron emitter at silicon chip back side and edge is removed, new making herbs into wool of laying equal stress on；
S6, silicon chip back side phosphorus diffusion, and form selective back surface field；
S7, cleaning remove the phosphorosilicate glass layer at front Pyrex layer and the back side, front deposition of aluminium oxide silicon nitride anti-reflection
Passivating film, backside deposition silicon nitride passive film；
S8, silk-screen printing front electrode and rear electrode, wherein front electrode is imprinted on heavily doped region, complete after high temperature sintering
It is prepared at battery.
Pretreatment and making herbs into wool are all made of conventional cleaning, process for etching in the present invention；High temperature is additionally carried out to promote and spread
When, the silicon wafer after deposition boron source is put into tubular type or chain type diffusion furnace carries out high temperature propulsion and diffusion；Single side removes in the present invention
The Pyrex layer at the back side, while retaining positive Pyrex layer, it can be used as the mask blocks layer of later process, protection is just
The p-n junction in face.
The present invention utilizes boron under hot conditions by the doped source rich in boron in one layer pattern of silicon chip surface pre-deposition
The mode spread into space, a step diffuse to form patterned area heavy doping, the selectivity hair that non-patterned region is lightly doped
The compound of Metal contact regions can be greatly reduced in emitter structure, promote the open-circuit voltage of solar cell, improve the shortwave of battery
Response promotes short circuit current, to effectively promote the photoelectric conversion efficiency of solar cell.Meanwhile present invention process is relatively simple
It is single, it is suitably applied large-scale production.
Preferably, special pattern region is consistent with front-side metallization figure in the step S2, special pattern region is wide
Degree is 20~1000um.
Preferably, the boron emitter at the back side and edge is removed by lye or acid solution in the step S5.
Preferably, the lye is TMAH or KOH.
Preferably, the acid solution is HF or HNO3。
Preferably, forming selective back surface field using etching or laser doping mode in the step S6.
The present invention also provides the efficient passivation contact crystalline silicon solar cells that above-mentioned preparation method is prepared.
Compared with prior art, the beneficial effects of the present invention are embodied in:
(1) present invention can be rich in by modes such as silk-screen printing, spin coating or sprayings silicon chip surface pre-deposition is patterned
The doped source of boron, using the boron diffusion to space at high temperature, a step High temperature diffusion forms selective emitter, technique preparation side
Method is simple and efficient, at low cost, is suitble to large-scale production.
(2) graphics field that doped source is deposited in the present invention forms heavily doped region, metallic electrode in High temperature diffusion
Compound in this region will substantially reduce, to effectively promote the open-circuit voltage of solar cell.
(3) the non-graphic region for not depositing doped source in the present invention forms lightly doped region in High temperature diffusion, adulterates dense
Spend it is low, have better shortwave it is corresponding, the short circuit current of battery is higher.
(4) High temperature diffusion in the present invention no longer needs to logical boron source, can effectively reduce boron source use, reduce to diffusion facilities
Technique requirement, reduces equipment cost.
Detailed description of the invention
Fig. 1 is flow diagram of the invention.
Specific embodiment
Embodiment 1
A kind of preparation method of the N-shaped crystal-silicon solar cell of selective emitter, as shown in Figure 1, including the following steps:
Using N-shaped monocrystalline silicon as silicon substrate, conventional cleaning, making herbs into wool are carried out first.
Then, by the way of silk-screen printing, in the doped source rich in boron of front one layer pattern of deposition of silicon substrate.
Then it is diffused under nitrogen and oxygen atmosphere by tubular type high temperature dispersing furnace.It is formed and is adulterated in patterned area
Highly concentrated p++ emitter forms the low p+ emitter of doping concentration in non-patterned region, and generates greatly under oxygen atmosphere
In the Pyrex oxide layer of 50nm.
Using the Pyrex oxide layer at the Chained cleaning machine single side removal back side, made using positive Pyrex oxide layer
For exposure mask, the one texture-etching side technique at the back side is carried out using TMAH.
Then high temperature phosphorus diffusion overleaf forms n++ layers of back surface field, the method etched using exposure mask printing and HF/HNO3,
Form the selective back surface field of n+/n++.
Then the phosphorosilicate glass oxide layer at positive Pyrex oxide layer and the back side is removed in cleaning, in front deposited oxide
Aluminium and silicon nitride passivation antireflective coating, backside deposition silicon nitride passive film.
Finally, the electrode of silk-screen printing front and back, front electrode is printed in the region of positive heavy doping, back side electricity
Pole is printed in the region n++ of selective back surface field.After high temperature sintering, the preparation of battery is completed.
Claims (7)
1. a kind of preparation method of the N-shaped crystal-silicon solar cell of selective emitter, which comprises the following steps:
S1, the silicon wafer pretreatment and making herbs into wool for selecting N-shaped；
S2, one layer of the special pattern area deposition doped source rich in boron in silicon wafer；
S3, the silicon wafer after deposition boron source is subjected to high temperature propulsion and diffusion；
The Pyrex layer of S4, single side removal silicon chip back side, while retaining positive Pyrex layer, as covering for later process
Positive p-n junction is protected on film barrier layer；
S5, the boron emitter at silicon chip back side and edge is removed, new making herbs into wool of laying equal stress on；
S6, silicon chip back side phosphorus diffusion, and form selective back surface field；
S7, cleaning remove the phosphorosilicate glass layer at front Pyrex layer and the back side, front deposition of aluminium oxide silicon nitride reduced passivation resisting
Film, backside deposition silicon nitride passive film；
S8, silk-screen printing front electrode and rear electrode, wherein front electrode is imprinted on heavily doped region, completes electricity after high temperature sintering
Pond preparation.
2. the preparation method of the N-shaped crystal-silicon solar cell of selective emitter as described in claim 1, which is characterized in that
Special pattern region is consistent with front-side metallization figure in the step S2, and special pattern peak width is 20~1000um.
3. the preparation method of the N-shaped crystal-silicon solar cell of selective emitter as described in claim 1, which is characterized in that
The boron emitter at the back side and edge is removed by lye or acid solution in the step S5.
4. the preparation method of the N-shaped crystal-silicon solar cell of selective emitter as claimed in claim 3, which is characterized in that
The lye is TMAH or KOH.
5. the preparation method of the N-shaped crystal-silicon solar cell of selective emitter as claimed in claim 3, which is characterized in that
The acid solution is HF or HNO3。
6. the preparation method of the N-shaped crystal-silicon solar cell of selective emitter as described in claim 1, which is characterized in that
Selective back surface field is formed using etching or laser doping mode in the step S6.
7. the N-shaped crystalline silicon sun electricity for the selective emitter that the preparation method as described in claim 1~6 is any is prepared
Pond.
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| CN201910578323.1A CN110265497B (en) | 2019-06-28 | 2019-06-28 | N-type crystalline silicon solar cell with selective emitter and preparation method thereof |
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| CN110265497A true CN110265497A (en) | 2019-09-20 |
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Cited By (7)
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| CN111524797A (en) * | 2020-04-26 | 2020-08-11 | 泰州中来光电科技有限公司 | Preparation method of selective emitter |
| CN111628047A (en) * | 2020-06-01 | 2020-09-04 | 江苏顺风光电科技有限公司 | Manufacturing method of N-type TOPCon solar cell |
| CN112510117A (en) * | 2020-12-09 | 2021-03-16 | 东方日升新能源股份有限公司 | Preparation method of selective emitter, preparation method of battery and battery |
| CN112670353A (en) * | 2020-12-17 | 2021-04-16 | 浙江正泰太阳能科技有限公司 | Boron-doped selective emitter battery and preparation method thereof |
| CN114944436A (en) * | 2022-05-11 | 2022-08-26 | 佛山科学技术学院 | Low-cost glass paste for preparing full back electrode crystalline silicon solar cell, cell structure and preparation method of cell structure |
| CN115172523A (en) * | 2022-07-13 | 2022-10-11 | 东方日升新能源股份有限公司 | Preparation method of solar cell |
| CN115458612A (en) * | 2022-10-27 | 2022-12-09 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method thereof |
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| CN112670353A (en) * | 2020-12-17 | 2021-04-16 | 浙江正泰太阳能科技有限公司 | Boron-doped selective emitter battery and preparation method thereof |
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| CN115458612A (en) * | 2022-10-27 | 2022-12-09 | 通威太阳能(眉山)有限公司 | Solar cell and preparation method thereof |
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Effective date of registration: 20230627 Address after: 213031 Tianhe PV Industrial Park No. 2, Xinbei District, Changzhou, Jiangsu Patentee after: TRINA SOLAR Co.,Ltd. Patentee after: TRINA SOLAR( CHANGZHOU) TECHNOLOGY Co.,Ltd. Address before: 213022 Tianhe Road, Tianhe Photovoltaic Industrial Park, Xinbei District, Changzhou City, Jiangsu Province Patentee before: TRINA SOLAR Co.,Ltd. |