CN114068681A - Diamond Schottky diode-based logic device working at high temperature and preparation method thereof - Google Patents
Diamond Schottky diode-based logic device working at high temperature and preparation method thereof Download PDFInfo
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- 239000010432 diamond Substances 0.000 title claims abstract description 200
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
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- 239000002184 metal Substances 0.000 claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims abstract description 31
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- 238000001657 homoepitaxy Methods 0.000 claims abstract description 15
- 238000000151 deposition Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 13
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 10
- 229910052796 boron Inorganic materials 0.000 claims description 10
- 229910052737 gold Inorganic materials 0.000 claims description 10
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 9
- 239000002253 acid Substances 0.000 claims description 9
- 229910052698 phosphorus Inorganic materials 0.000 claims description 9
- 239000011574 phosphorus Substances 0.000 claims description 9
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
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- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052745 lead Inorganic materials 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 229910052726 zirconium Inorganic materials 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 12
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- 239000001301 oxygen Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/1602—Diamond
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66015—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene
- H01L29/66022—Multistep manufacturing processes of devices having a semiconductor body comprising semiconducting carbon, e.g. diamond, diamond-like carbon, graphene the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6603—Diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
A logic device working at high temperature based on a diamond Schottky diode and a preparation method thereof aim to solve the problem that the circuit can not work normally due to heating of the existing high-integration electronic components and the like. The logic device based on the diamond Schottky diode is characterized in that a boron-doped or phosphorus-doped diamond layer is deposited on a diamond substrate, a selective growth metal mask and a selective homoepitaxy growth layer are deposited on the surface of the boron-doped or phosphorus-doped diamond layer, the selective growth metal mask and the selective homoepitaxy growth layer are positioned on two sides of the surface of the boron-doped or phosphorus-doped diamond layer, the selective growth metal mask is used as an ohmic electrode, at least two Schottky electrodes are deposited on the selective homoepitaxy growth layer, and the ohmic electrode is used as a signal output end; the ohmic electrode is connected to a load resistor through a wire, and a bias voltage is applied to the other end of the load resistor. The diamond logic AND gate of the invention normally works at high temperature of 600K and above, and realizes the function of the logic AND gate.
Description
Technical Field
The invention belongs to the field of semiconductor devices and logic circuits, and particularly relates to a logic AND gate device of a diamond Schottky diode working at high temperature and a preparation method thereof.
Background
With the further increase of the integration level of the integrated circuit, the heat dissipation of the semiconductor device becomes a main limiting factor for the performance of the semiconductor chip. Heat dissipation means such as water cooling, air cooling and the like are often applied to places such as high-power components, central processing units and the like. However, the auxiliary cooling means not only occupies space but also increases energy consumption, so that electronic components and logic circuits which stably work at high temperature are researched and developed, and the logic circuit has great application value. Diamond, as a wide bandgap semiconductor material, has excellent characteristics of high temperature resistance, radiation resistance, high carrier mobility, high breakdown field strength, and the like, and is considered to be an ultimate semiconductor material.
Disclosure of Invention
The invention aims to solve the problem that the existing high-integration electronic component and the like cannot normally work due to high (heat generation) heat, and provides a method for preparing an AND gate logic device by using a high-temperature-resistant diamond Schottky diode device and realizing the normal work of the AND gate logic device at high temperature.
The logic device comprises a diamond substrate, a boron-doped or phosphorus-doped diamond layer, a selective growth metal mask, a selective homoepitaxial growth layer and Schottky electrodes, wherein the boron-doped or phosphorus-doped diamond layer is deposited on the diamond substrate, a selective growth metal mask and a selective homoepitaxial growth layer are deposited on the surface of the boron-doped or phosphorus-doped diamond layer, the selective growth metal mask and the selective homoepitaxial growth layer are positioned on the left side and the right side of the surface of the boron-doped or phosphorus-doped diamond layer, the selective growth metal mask is used as an ohmic electrode, at least two Schottky electrodes are deposited on the selective homoepitaxial growth layer and used as signal input ends, and the ohmic electrodes are used as signal output ends; the ohmic electrode is connected with a load resistor through a lead, and bias voltage is applied to the other end of the load resistor;
wherein the doping concentration of the boron-doped or phosphorus-doped diamond layer is higher than that of the selective homoepitaxial growth layer.
The preparation method of the logic device working at high temperature based on the quasi-vertical diamond Schottky diode is realized according to the following steps:
firstly, epitaxially growing a boron-doped or phosphorus-doped diamond layer on a diamond substrate by using a microwave plasma chemical vapor deposition method to obtain a diamond substrate;
secondly, placing the diamond substrate in a mixed acid solution, heating to boil, and then carrying out ultrasonic cleaning to obtain a cleaned diamond substrate;
depositing a selective growth metal mask on one side of the surface of the cleaned diamond substrate, and taking the selective growth metal mask as an ohmic electrode to obtain the diamond substrate with a mask structure;
fourthly, epitaxially growing a selective homoepitaxy growth layer on the other side of the surface of the diamond substrate with the mask structure, and doping boron or phosphorus in the selective homoepitaxy growth layer to obtain the diamond substrate after epitaxial growth;
fifthly, heating the diamond substrate after epitaxial growth in air at 450-590 ℃, and converting a hydrogen terminal into an oxygen terminal to obtain an annealed diamond substrate;
depositing at least two Schottky electrodes on the selective homoepitaxy growth layer of the annealed diamond substrate to obtain a diamond Schottky diode;
connecting the load resistor with the ohmic electrode by using a lead, and connecting the load resistor with a bias voltage to obtain a logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode;
wherein the doping concentration of the boron-doped or phosphorus-doped diamond layer is higher than that of the selective homoepitaxial growth layer.
The logic device based on the high-temperature work of the vertical diamond Schottky diode comprises a boron-doped or phosphorus-doped diamond substrate, a diamond epitaxial layer, an ohmic electrode layer and Schottky electrodes, wherein the diamond epitaxial layer is deposited on the upper surface of the boron-doped or phosphorus-doped diamond substrate, at least two Schottky electrodes are deposited on the diamond epitaxial layer to serve as signal input ends, the ohmic electrode layer is deposited on the lower surface of the boron-doped or phosphorus-doped diamond substrate to serve as a signal output end, the ohmic electrode layer is connected with a resistor through a lead, and bias voltage is applied to the other end of the resistor;
wherein the doping concentration of the boron-doped or phosphorus-doped diamond substrate is higher than that of the diamond epitaxial layer.
The invention relates to a preparation method of a logic device based on high-temperature work of a vertical diamond Schottky diode, which is realized according to the following steps:
depositing a diamond epitaxial layer on the surface of a boron-doped or phosphorus-doped diamond substrate by adopting a chemical vapor deposition method, wherein the boron-doped or phosphorus-doped diamond epitaxial layer is doped to obtain an epitaxially grown diamond substrate;
secondly, placing the diamond substrate subjected to epitaxial growth in a mixed acid solution, and heating to 230-350 ℃ for treatment to obtain a cleaned diamond substrate;
depositing an ohmic electrode layer on the lower surface of the cleaned diamond substrate to obtain the diamond substrate with the ohmic electrode;
fourthly, heating the diamond substrate with the ohmic electrode at 450-590 ℃ in the air to obtain an annealed diamond substrate;
depositing a Schottky electrode on the upper surface of the annealed diamond substrate to obtain a diamond Schottky diode;
connecting the resistor with the ohmic electrode layer by using a lead, and connecting the resistor with a bias voltage to obtain a high-temperature working logic device based on the vertical diamond Schottky diode;
wherein the doping concentration of the boron-doped or phosphorus-doped diamond substrate is higher than that of the diamond epitaxial layer.
The diamond Schottky logic AND gate comprises a diamond Schottky diode, a load resistor and a lead. The Schottky electrode of the diamond Schottky diode is used as the input end of a signal. The boron-doped or phosphorus-doped diamond substrate is connected with an ohmic electrode, the ohmic electrode is connected with a load resistor through a lead, bias voltage is applied to the other end of the load resistor, and the ohmic electrode serves as a signal output end. The structure of the diamond Schottky device can be divided into a quasi-vertical Schottky device and a vertical Schottky device due to the fact that ohmic contacts are arranged on the same side and different sides of the Schottky electrode, and the difference of the device structures caused by the difference of used boron-doped substrates or phosphorus-doped substrates does not affect the function realization of a final AND gate.
Due to the difference in diamond surface work function and metal work function, metal-semiconductor contacts form schottky contacts according to mott-schottky theory. The invention connects two or more than two Schottky diode ohmic contact electrodes as output ends and connects with a load resistor, and applies bias voltage on the other side of the load resistor. The Schottky contact is a rectifying contact, namely a device applying forward voltage is opened, the resistance is low, and the current is large under low voltage; the resistance is large when reverse voltage is applied, and the high voltage still has very low current, namely forward conduction and reverse cut-off. Take boron-doped p-type schottky junction as an example. The bias voltage was set to 5V. When a high level of 5V (logic 1) is applied to the Schottky junction A and a high level of 5V (logic 1) is also input to the Schottky junction B, the Schottky junction A and the Schottky junction B are not opened, the two devices have large resistances, the signal output end, namely the ohmic electrode, is directly connected with a bias voltage through a load resistor, and the level of the signal output end is close to the bias voltage and is at the high level (logic 1). When any one of the Schottky junctions applies low level or two of the Schottky junctions apply low level at the same time, the Schottky junction is opened, large current flows through the load resistor, obvious voltage division effect is generated, the voltage of the signal output end is reduced and is at low level (logic 0), and the AND gate function is realized.
The logic AND gate of the diamond Schottky diode working at high temperature has the following beneficial effects:
the Schottky diode device manufactured by using the wide bandgap semiconductor diamond can work under severe conditions of high temperature, high radiation, high voltage and the like; the manufactured diamond logic AND gate can work normally at high temperature of 600K or above, and the function of the logic AND gate is realized.
Drawings
FIG. 1 is a schematic diagram of a high temperature operating logic device based on a quasi-vertical diamond Schottky diode according to the present invention;
FIG. 2 is a schematic diagram of the structure of a high temperature operating logic device based on a vertical diamond Schottky diode according to the present invention;
FIG. 3 is a square waveform diagram of an input signal of 10kHz and an amplitude of 5V in the embodiment;
FIG. 4 is a waveform diagram of the output of the AND gate with a constant voltage of 10V in the embodiment, wherein the abscissa is time (μ s);
FIG. 5 is a waveform diagram of the output of the AND gate when the constant voltage is 8V in the embodiment, wherein the abscissa is time (μ s);
FIG. 6 is a waveform diagram of the output of the AND gate when the constant voltage is 5V in the embodiment, wherein the abscissa is time (μ s);
FIG. 7 is a waveform diagram of the output of the AND gate when the constant voltage is 3V in the embodiment, wherein the abscissa is time (μ s);
FIG. 8 is a waveform diagram of the output of the AND gate when the constant voltage is 0V in the embodiment, wherein the abscissa is time (μ s);
FIG. 9 is a waveform diagram of the output of the AND gate when the constant voltage is-4V in the embodiment, wherein the abscissa is time (μ s);
FIG. 10 is a waveform diagram of the output of the AND gate when the constant voltage is-5V in the embodiment, wherein the abscissa is time (. mu.s);
FIG. 11 shows the-5V, R input for the first Schottky electrode at different temperatures0＝40kΩ，VccOutput waveform diagram when being 5V signal; wherein ■ represents 358K, ● represents 388K, diamond-solid represents 476K,
represents a radical of 523K, which is,
represents 573K.
FIG. 12 shows the first Schottky electrode input 5V, R at different temperatures0＝40kΩ，VccThe output waveform diagram of 5V signal.
Detailed Description
The first embodiment is as follows: the logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode comprises a diamond substrate 1, a boron-doped or phosphorus-doped diamond layer 2, a selective growth metal mask 3, a selective homoepitaxial growth layer 4 and Schottky electrodes, wherein the boron-doped or phosphorus-doped diamond layer 2 is deposited on the diamond substrate 1, the selective growth metal mask 3 and the selective homoepitaxial growth layer 4 are deposited on the surface of the boron-doped or phosphorus-doped diamond layer 2, the selective growth metal mask 3 and the selective homoepitaxial growth layer 4 are positioned on the left side and the right side of the surface of the boron-doped or phosphorus-doped diamond layer 2, the selective growth metal mask 3 serves as an ohmic electrode, at least two Schottky electrodes are deposited on the selective homoepitaxial growth layer 4 and serve as signal input ends, and the ohmic electrodes serve as signal output ends; the ohmic electrode is connected with a load resistor 8 through a lead, and a bias voltage 9 is applied to the other end of the load resistor 8;
wherein the doping concentration of the boron-doped or phosphorus-doped diamond layer 2 is higher than the doping concentration of the selective homoepitaxial growth layer 4.
The thickness of the boron-doped or phosphorus-doped diamond layer 2 in the present embodiment is 100nm to 100 μm. The doping elements in the boron-doped or phosphorus-doped diamond layer 2 and the selective homoepitaxial growth layer 4 are the same.
The second embodiment is as follows: the present embodiment is different from the first embodiment in that the resistance value of the load resistor 8 is 1k Ω to 1G Ω.
The third concrete implementation mode: the difference between this embodiment and the first or second embodiment is that the material of the selective growth metal mask 3 is Au, Pt, Ru, Pd, Au, Ti/Pt/Au, Ti/Ru, Ti/Mo, Cr/Au, Cr/Ru or W.
The fourth concrete implementation mode: this embodiment is different from the first to third embodiments in that the material of the schottky electrode is Al, Au, Pt, Ru, Zr, W, Ni, Pb, or Mo.
The fifth concrete implementation mode: the difference between this embodiment and one of the first to fourth embodiments is that the thickness of the selectively grown metal mask 3 is 50nm to 500nm, the thickness of the selectively homoepitaxial growth layer 4 is 100nm to 50 μm, and the thickness of the schottky electrode is 20nm to 500 nm.
The sixth specific implementation mode: the preparation method of the logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode is implemented according to the following steps:
firstly, epitaxially growing a boron-doped or phosphorus-doped diamond layer 2 on a diamond substrate 1 by using a microwave plasma chemical vapor deposition method to obtain a diamond substrate;
secondly, placing the diamond substrate in a mixed acid solution, heating to boil, and then carrying out ultrasonic cleaning to obtain a cleaned diamond substrate;
depositing a selective growth metal mask 3 on one side of the surface of the cleaned diamond substrate, wherein the selective growth metal mask 3 plays a role of a mask in an epitaxial growth process, and a subsequent circuit is used as an ohmic electrode to obtain the diamond substrate with a mask structure;
fourthly, epitaxially growing a selective homoepitaxy growth layer 4 on the other side of the surface of the diamond substrate with the mask structure, and doping boron or phosphorus into the selective homoepitaxy growth layer 4 to obtain the diamond substrate after epitaxial growth;
fifthly, heating the diamond substrate after epitaxial growth in air at 450-590 ℃, and converting a hydrogen terminal into an oxygen terminal to obtain an annealed diamond substrate;
sixthly, depositing at least two Schottky electrodes on the selective homoepitaxy growth layer 4 of the annealed diamond substrate to obtain a diamond Schottky diode;
connecting a load resistor 8 with the ohmic electrode by using a lead 7, and connecting the load resistor with a bias voltage 9 to obtain a logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode;
wherein the doping concentration of the boron-doped or phosphorus-doped diamond layer 2 is higher than the doping concentration of the selective homoepitaxial growth layer 4.
In the embodiment, hydrogen, methane, borane or phosphane is introduced into the boron-doped or phosphorus-doped diamond layer 2 and the selective homoepitaxial growth layer 4 in the epitaxial growth process to carry out boron doping or phosphorus doping.
The seventh embodiment: the difference between the sixth embodiment and the sixth embodiment is that the mixed acid solution in the second step is concentrated H with the mass concentration of 70%2SO4And concentrated HNO with the mass concentration of 70 percent3Mixing the components.
The specific implementation mode is eight: the logic device based on the high-temperature work of the vertical diamond Schottky diode comprises a boron-doped or phosphorus-doped diamond substrate 10, a diamond epitaxial layer 13, an ohmic electrode layer 14 and Schottky electrodes, wherein the diamond epitaxial layer 13 is deposited on the upper surface of the boron-doped or phosphorus-doped diamond substrate 10, at least two Schottky electrodes are deposited on the diamond epitaxial layer 13 to serve as signal input ends, the ohmic electrode layer 14 is deposited on the lower surface of the boron-doped or phosphorus-doped diamond substrate 10 to serve as a signal output end, the ohmic electrode layer 14 is connected with a resistor 16 through a lead, and a bias voltage 9 is applied to the other end of the resistor 16;
wherein the doping concentration of the boron-or phosphorus-doped diamond substrate 10 is higher than the doping concentration of the diamond epitaxial layer 13.
In the logic device based on the high-temperature operation of the vertical type diamond schottky diode in the present embodiment, the first schottky electrode 11 and the second schottky electrode 12 are deposited on the diamond epitaxial layer 13.
The specific implementation method nine: the present embodiment is different from the eighth embodiment in that the doping concentration of boron or phosphorus in the boron-doped or phosphorus-doped diamond substrate 10 is 1017cm-3～1022cm-3。
The detailed implementation mode is ten: the method for manufacturing the logic device based on the high-temperature operation of the vertical diamond Schottky diode is implemented according to the following steps:
firstly, depositing a diamond epitaxial layer 13 on the surface of a boron-doped or phosphorus-doped diamond substrate 10 by adopting a chemical vapor deposition method, and doping boron or phosphorus into the diamond epitaxial layer 13 to obtain an epitaxially grown diamond substrate;
secondly, placing the diamond substrate subjected to epitaxial growth in a mixed acid solution, and heating to 230-350 ℃ for treatment to obtain a cleaned diamond substrate;
depositing an ohmic electrode layer 14 on the lower surface of the cleaned diamond substrate to obtain the diamond substrate with the ohmic electrode;
fourthly, heating the diamond substrate with the ohmic electrode at 450-590 ℃ in the air, and converting a hydrogen terminal into an oxygen terminal to obtain an annealed diamond substrate;
depositing a Schottky electrode on the upper surface of the annealed diamond substrate to obtain a diamond Schottky diode;
sixthly, connecting the resistor 16 with the ohmic electrode layer 14 by using a lead, and connecting the resistor with the bias voltage 9 to obtain a logic device based on the high-temperature work of the vertical diamond Schottky diode;
wherein the doping concentration of the boron-or phosphorus-doped diamond substrate 10 is higher than the doping concentration of the diamond epitaxial layer 13.
Example (b): the preparation method of the logic device based on the high-temperature operation of the quasi-vertical diamond schottky diode is implemented according to the following steps:
firstly, a boron-doped diamond layer 2 is epitaxially grown on a high-temperature and high-pressure diamond substrate 1 by a microwave plasma chemical vapor deposition method, the thickness of the boron-doped diamond layer is 60 mu m, and the doping concentration of the boron-doped diamond layer is 1018cm-3Obtaining a diamond substrate;
secondly, placing the diamond substrate in a mixed acid solution, heating to boil, and then carrying out ultrasonic cleaning to obtain a cleaned diamond substrate;
depositing a selective growth metal mask 3 on one side of the surface of the cleaned diamond substrate through photoetching-magnetron sputtering, wherein the selective growth metal mask 3 is a Ti/Ru metal layer with the thickness of 106nm, and the selective growth metal mask 3 is used as an ohmic electrode to obtain the diamond substrate with a mask structure;
fourthly, epitaxially growing a selective homoepitaxy growth layer 4 on the other side of the diamond substrate surface with the mask structure through chemical vapor deposition, wherein the thickness of the selective homoepitaxy growth layer 4 is 1 mu m, and the boron doping concentration is about 1016cm-3Obtaining a diamond substrate after epitaxial growth;
fifthly, heating the diamond substrate after epitaxial growth in a tube furnace at 500 ℃ for 10 minutes to convert a hydrogen terminal into an oxygen terminal to obtain an annealed diamond substrate;
sixthly, depositing a first Schottky electrode 5 and a second Schottky electrode 6 on the selective homoepitaxial growth layer 4 of the annealed diamond substrate, wherein the Schottky electrode is a metal layer manufactured by photoetching-magnetron sputtering, the metal material is Zr/Ru, and the thickness is 200nm to obtain the diamond Schottky diode;
and seventhly, connecting the load resistor 8 with the ohmic electrode by using a lead 7, and connecting the load resistor with a bias voltage 9 to obtain the logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode.
FIGS. 3-10 show a square wave with an input signal of 10kHz and an amplitude of 5V and different constant voltages UA(10V to-5V, input to the first Schottky electrode 5) and gate output waveform, bias voltage Vcc5V, and the load resistance is 10k omega; it can be seen that when the input signal of the first schottky electrode 5 is-5V, i.e., low level, the output waveform is only low level (0V) regardless of whether the input voltage is high level (5V) or low level (0V). When the input signal of the first Schottky electrode 5 is 3-10V, the voltage relative value of the output signal changes along with the height of the input square wave, and the chamber is verifiedUnder the condition of temperature, the circuit has the characteristics of logic AND gate;
fig. 11 shows output waveforms when-5V signals are inputted to the first schottky electrode 5 at different temperatures (the signal inputted to the second schottky electrode 6 is a 10kHz square wave with an amplitude of 5V, the bias voltage is 5V, and the load resistance is 40k Ω). It can be seen that when the first schottky electrode 5 inputs a low level, the output signal does not change;
fig. 12 shows output waveforms of the first schottky electrode 5 when a 5V signal is input at different temperatures (the input signal of the second schottky electrode 6 is 10kHz, the amplitude of the square wave is 5V, the bias voltage is 5V, and the load resistance is 40K Ω), and it can be seen that when the first schottky electrode 5 inputs a high level, the level of the output signal changes with the level of the square wave signal of the second schottky electrode 6, and is still valid until 633K. This demonstrates that the device can operate at 633K.
In conclusion, the logic AND gate of the diamond Schottky diode working at high temperature can run at 633K, and has great application value.
Claims (10)
1. The logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode is characterized by comprising a diamond substrate (1), a boron-doped or phosphorus-doped diamond layer (2), a selective growth metal mask (3), a selective homoepitaxial growth layer (4) and a Schottky electrode, wherein the boron-doped or phosphorus-doped diamond layer (2) is deposited on the diamond substrate (1), the selective growth metal mask (3) and the selective homoepitaxial growth layer (4) are deposited on the surface of the boron-doped or phosphorus-doped diamond layer (2), the selective growth metal mask (3) and the selective homoepitaxial growth layer (4) are positioned on the left side and the right side of the surface of the boron-doped or phosphorus-doped diamond layer (2), and the selective growth metal mask (3) is used as an ohmic electrode, depositing at least two Schottky electrodes on the selective homoepitaxy growth layer (4) to serve as signal input ends, and using ohmic electrodes as signal output ends; the ohmic electrode is connected with a load resistor (8) through a lead, and bias voltage (9) is applied to the other end of the load resistor (8);
wherein the doping concentration of the boron-doped or phosphorus-doped diamond layer (2) is higher than that of the selective homoepitaxial growth layer (4).
2. The high-temperature operation logic device based on the quasi-vertical diamond Schottky diode according to claim 1, wherein the load resistor (8) has a resistance value of 1 kOmega-1 GOmega.
3. The high temperature logic device based on quasi-vertical diamond Schottky diode according to claim 1, wherein the material of the selective growth metal mask (3) is Au, Pt, Ru, Pd, Au, Ti/Pt/Au, Ti/Ru, Ti/Mo, Cr/Au, Cr/Ru or W.
4. The high temperature operated logic device based on the quasi-vertical diamond schottky diode as claimed in claim 1, wherein the material of the schottky electrode is Al, Au, Pt, Ru, Zr, W, Ni, Pb or Mo.
5. The high temperature operated logic device based on the quasi-vertical diamond schottky diode as claimed in claim 1, wherein the thickness of the selective growth metal mask (3) is 50nm to 500nm, the thickness of the selective homoepitaxial growth layer (4) is 100nm to 50 μm, and the thickness of the schottky electrode is 20nm to 500 nm.
6. The preparation method of the logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode is characterized by comprising the following steps of:
firstly, epitaxially growing a boron-doped or phosphorus-doped diamond layer (2) on a diamond substrate (1) by using a microwave plasma chemical vapor deposition method to obtain a diamond substrate;
secondly, placing the diamond substrate in a mixed acid solution, heating to boil, and then carrying out ultrasonic cleaning to obtain a cleaned diamond substrate;
depositing a selective growth metal mask (3) on one side of the surface of the cleaned diamond substrate, and taking the selective growth metal mask (3) as an ohmic electrode to obtain the diamond substrate with a mask structure;
fourthly, epitaxially growing a selective homoepitaxy growth layer (4) on the other side of the surface of the diamond substrate with the mask structure, and doping boron or phosphorus into the selective homoepitaxy growth layer (4) to obtain the diamond substrate after epitaxial growth;
fifthly, heating the diamond substrate after epitaxial growth in air at 450-590 ℃ to obtain an annealed diamond substrate;
sixthly, depositing at least two Schottky electrodes on the selective homoepitaxy growth layer (4) of the annealed diamond substrate to obtain a diamond Schottky diode;
connecting a load resistor (8) with the ohmic electrode by using a lead (7) and connecting a bias voltage (9) to obtain a logic device based on the high-temperature work of the quasi-vertical diamond Schottky diode;
wherein the doping concentration of the boron-doped or phosphorus-doped diamond layer (2) is higher than that of the selective homoepitaxial growth layer (4).
7. The method for manufacturing a logic device based on quasi-vertical diamond Schottky diode and working at high temperature as claimed in claim 6, wherein the mixed acid solution in the second step is concentrated H with a mass concentration of 70%2SO4And concentrated HNO with the mass concentration of 70 percent3Mixing the components.
8. The logic device based on the high-temperature work of the vertical diamond Schottky diode is characterized by comprising a boron-doped or phosphorus-doped diamond substrate (10), a diamond epitaxial layer (13), an ohmic electrode layer (14) and Schottky electrodes, wherein the diamond epitaxial layer (13) is deposited on the upper surface of the boron-doped or phosphorus-doped diamond substrate (10), at least two Schottky electrodes are deposited on the diamond epitaxial layer (13) and used as signal input ends, the ohmic electrode layer (14) is deposited on the lower surface of the boron-doped or phosphorus-doped diamond substrate (10) and used as a signal output end, the ohmic electrode layer (14) is connected with a resistor (16) through a lead, and a bias voltage (9) is applied to the other end of the resistor (16);
wherein the doping concentration of the boron-or phosphorus-doped diamond substrate (10) is higher than the doping concentration of the diamond epitaxial layer (13).
9. The vertical diamond schottky diode based logic device for high temperature operation as claimed in claim 8 wherein the boron or phosphorus doping concentration in the boron or phosphorus doped diamond substrate (10) is 1017cm-3～1022cm-3。
10. The preparation method of the logic device based on the high-temperature work of the vertical diamond Schottky diode is characterized by comprising the following steps of:
firstly, depositing a diamond epitaxial layer (13) on the surface of a boron-doped or phosphorus-doped diamond substrate (10) by adopting a chemical vapor deposition method, and doping boron or phosphorus into the diamond epitaxial layer (13) to obtain an epitaxially grown diamond substrate;
secondly, placing the diamond substrate subjected to epitaxial growth in a mixed acid solution, and heating to 230-350 ℃ for treatment to obtain a cleaned diamond substrate;
depositing an ohmic electrode layer (14) on the lower surface of the cleaned diamond substrate to obtain the diamond substrate with the ohmic electrode;
fourthly, heating the diamond substrate with the ohmic electrode at 450-590 ℃ in the air to obtain an annealed diamond substrate;
depositing a Schottky electrode on the upper surface of the annealed diamond substrate to obtain a diamond Schottky diode;
sixthly, connecting the resistor (16) with the ohmic electrode layer (14) by using a lead, and connecting the resistor with a bias voltage (9) to obtain a logic device based on the high-temperature work of the vertical diamond Schottky diode;
wherein the doping concentration of the boron-or phosphorus-doped diamond substrate (10) is higher than the doping concentration of the diamond epitaxial layer (13).
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