CN104617159A - Diamond schottky diode and manufacturing method thereof - Google Patents
Diamond schottky diode and manufacturing method thereof Download PDFInfo
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- CN104617159A CN104617159A CN201510023353.8A CN201510023353A CN104617159A CN 104617159 A CN104617159 A CN 104617159A CN 201510023353 A CN201510023353 A CN 201510023353A CN 104617159 A CN104617159 A CN 104617159A
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- diamond
- layer
- schottky diode
- metal level
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Abstract
The invention discloses a diamond schottky diode and a manufacturing method thereof. The diamond schottky diode comprises an ohmic electrode, a P-type highly-doped diamond substrate, a drift layer and a schottky electrode which are laminated in sequence, wherein the schottky electrode is of a single hafnium layer structure or a composite layer structure comprising a plurality of single metal layers with a single hafnium layer as a bottom layer. According to the diamond schottky diode manufactured by the method, the withstand voltage is improved, the reverse leakage current is reduced, and the reverse performance of the diamond schottky diode is improved.
Description
Technical field
The invention belongs to technical field of semiconductor device, be specifically related to a kind of diamond Schottky diode and preparation method thereof.
Background technology
Diamond is made up of carbon atom, belongs to cubic system, and its structure is Bravais lattice is face-centred cubic complex lattice.Its high energy gap (5.5eV), high breakdown field strength (10MV/cm), high electronics and hole mobility (4500cm
2/and 3800cm (Vs)
2/ (Vs)) and high heat conductance (22W/ (mmK)), make diamond at high frequency, efficient, high-power, high-temperature field as having a wide range of applications in electric power energy electronics, information electronic, Environics etc.And along with the development of microwave plasma CVD (MPCVD) technology, the semiconductor device made with diamond gets more and more, and its performance is also become better and better.Incomparable advantage is had relative to semiconductor device such as Si, SiC, GaN, GaAs.In recent years, along with Aero-Space, electric locomotive, electric automobile, the broad development of the aspects such as high direct voltage transmission, semiconductor power conversion apparatus is proposed to the requirement of high withstand voltage, big current, high efficiency, low-loss, the aspect such as high temperature resistant, existing semi-conducting material has manifested at disruptive field intensity, self-heating effect due to its intrinsic characteristic gradually, and the aspects such as current density cannot meet power device requirement deadly defect.
Summary of the invention
Technical problem to be solved by this invention is for above-mentioned the deficiencies in the prior art, a kind of diamond Schottky diode and preparation method thereof is provided, this diamond Schottky diode improves disruptive field intensity, reduces reverse leakage current, improves the performance of diamond Schottky diode.
For solving the problems of the technologies described above, the technical solution used in the present invention is, a kind of diamond Schottky diode, it is characterized in that, comprise the Ohmic electrode, the highly doped diamond substrate of P type, drift layer and the Schottky electrode that are cascading, the lamination layer structure of Schottky electrode to be single hafnium layer structure or bottom the be multiple single metal level of single hafnium layer.
Further, in Schottky electrode, other metal level is the single metal level formed by titanium, nickel, platinum or gold; Or other metal level is that the multiple single metal level formed by one or more in titanium, nickel, platinum and gold is compounded to form.
Further, Schottky electrode is set to field plate structure, and field plate structure dielectric layer is one or more materials.
Further, Ohmic electrode is single metal level or composite bed, wherein, single metal level is deposited by the one in palladium, titanium, gold, nickel and platinum and is formed, and composite bed is be compounded to form by the multiple single metal level that in palladium, titanium, gold, nickel and platinum, one or more are formed.
Further, in the highly doped diamond substrate of P type, the content of boron atom is N
a>10
19cm
-3.
Further, drift layer is the low-doped diamond layer of P type or intrinsic diamond layer, and wherein in the low-doped diamond layer of P type, the content of boron atom is N
a<10
17cm
-3.
Further, the annealed process of diamond Schottky diode.
Present invention also offers the manufacture method of above-mentioned diamond Schottky diode, it is characterized in that, the method comprises following:
First, at P type highly doped diamond substrate Epitaxial growth one deck low-doped diamond layer of P type or intrinsic diamond layer as drift layer;
Then, form Schottky electrode in drift layer upper surface deposition, Schottky electrode is single hafnium layer structure or comprises the lamination layer structure that bottom is the multiple single metal level of single hafnium layer; At P type highly doped diamond substrate lower surface plated metal, form Ohmic electrode.
Further, the method also comprises the annealing in process after depositing formation Schottky electrode and Ohmic electrode.
A kind of diamond Schottky diode of the present invention, due to the metal work function of hafnium lower (3.9eV), the schottky barrier height being higher than the metals such as the zirconium (4.05eV) delivered in the world at present and molybdenum (about 4.6eV) and diamond contact with the schottky barrier height formed during p-type diamond contact and being formed, the leakage current of diamond Schottky diode can be reduced, improve the reverse performance of diamond Schottky diode.
Accompanying drawing explanation
Fig. 1 is the structural representation of diamond Schottky diode in the present invention;
Fig. 2 is the schematic diagram of the highly doped diamond substrate of P type in the embodiment of the present invention;
Fig. 3 is the schematic diagram of the low-doped diamond layer of extension one deck P type or intrinsic diamond layer in the highly doped diamond substrate of P type in the embodiment of the present invention;
In Fig. 4 embodiment of the present invention in the highly doped diamond substrate of P type the schematic diagram of deposit ohmic electrode.
Embodiment
Diamond Schottky diode primary structure is that metal electrode and P type (boron doping) diamond thin form diode, and its one of them important application is high withstand voltage, big current, resistant to elevated temperatures high-power electric conversion.Current adamantine P type adulterates comparative maturity, and the diamond Schottky diode utilizing P type doped diamond to make has that cut-in voltage is low, high-temperature stability good, commutating ratio is large and the advantage such as switching speed is fast.Because adamantine breakdown electric field will much larger than other semiconductor, so under same requirement of withstand voltage, diamond Schottky diode can do thinner, and conducting resistance is less.And because its high thermal conductivity can effectively be dispelled the heat, stability is better.
In order to the performance of optimizing metal hard rock Schottky diode, scientists is being attempted with the Schottky electrode of different metals as diamond Schottky diode always.The metals such as molybdenum, aluminium, ruthenium, zirconium are widely used at diamond Schottky diode.In the structure of diamond Schottky diode, diamond thin is divided into two-layer, light dope (P-) or intrinsic diamond layer are that drift region is withstand voltage, and heavy doping (P+) layer can reduce ohmic contact resistance effectively, thus reduce the conducting resistance of diode.On electrode structure, field plate structure is introduced Schottky electrode and effectively can improve the device inside Electric Field Distribution of diode operation when reverse voltage, thus improve the reverse breakdown voltage of device.
As shown in Figure 1, a kind of diamond Schottky diode, comprise the Ohmic electrode 1, the highly doped diamond substrate 2 of P type, drift layer 3 and the Schottky electrode 4 that are cascading, the lamination layer structure of Schottky electrode 4 to be single hafnium layer structure or bottom the be multiple single metal level of single hafnium layer.
In the specific implementation, in Schottky electrode 4, other metal level is the single metal level formed by titanium, nickel, platinum or gold in the present invention; Or other metal level is that the multiple single metal level formed by one or more in titanium, nickel, platinum and gold is compounded to form.Schottky electrode 4 is set to field plate structure, and field plate structure dielectric layer is one or more materials.Dielectric layer selects material of the prior art.
Ohmic electrode 1 is single metal level or composite bed, and wherein, single metal level is deposited by the one in palladium, titanium, gold, nickel and platinum and formed, and composite bed is be compounded to form by the multiple single metal level that in palladium, titanium, gold, nickel and platinum, one or more are formed.
In the highly doped diamond substrate 2 of P type, the content of boron atom is N
a>10
19cm
-3.
Drift layer 3 is the low-doped diamond layer of P type or intrinsic diamond layer.In the low-doped diamond layer of P type, the content of boron atom is N
a<10
17cm
-3.
The annealed process of diamond Schottky diode.
Present invention also offers the manufacture method of above-mentioned diamond Schottky diode, the method is as follows: synthesize the highly doped diamond substrate 2 of boron doped P type by the mode of HTHP or chemical vapour deposition (CVD), as shown in Figure 2.Adopt chemical vapour deposition technique at P type highly doped diamond substrate 2 Epitaxial growth one deck low-doped diamond layer of P type or intrinsic diamond layer 3, as shown in Figure 3.Ohmic electrode 1 is formed, as shown in Figure 4 at P type highly doped diamond substrate lower surface plated metal.
Wherein, at the low-doped diamond layer of P type or intrinsic single crystal diamond layer upper surface plated metal hafnium, form the Schottky electrode 4 of single hafnium layer, can also on metal hafnium the composite bed of titanium deposition, nickel, platinum and gold monolayers or multiple single metal level, to form the Schottky electrode 4 of composite bed, as shown in Figure 1.
The manufacture method of diamond Schottky diode of the present invention, also comprises the annealing in process after deposition formation Schottky electrode 4 and Ohmic electrode 1.
Form at P type highly doped diamond substrate lower surface plated metal the Schottky electrode 4 that Ohmic electrode 1 and the low-doped diamond layer of P type or intrinsic single crystal diamond layer upper surface plated metal hafnium form single hafnium layer, the sequencing of these two steps will not limit.
Other embodiments of the invention, concentration, the thickness that can change the highly doped diamond substrate of P type and the low-doped diamond layer of P type according to actual needs realize.The invention is not restricted to single-crystal diamond, be also suitable for polycrystalline diamond, be applicable to the diamond of various technology synthesis.
Claims (9)
1. a diamond Schottky diode, it is characterized in that, comprise the Ohmic electrode (1), the highly doped diamond substrate of P type (2), drift layer (3) and the Schottky electrode (4) that are cascading, described Schottky electrode (4) is the lamination layer structure of the multiple single metal level of single hafnium layer for single hafnium layer structure or bottom.
2. a kind of diamond Schottky diode as claimed in claim 1, is characterized in that, in described Schottky electrode (4), other metal level is the single metal level formed by titanium, nickel, platinum or gold; Or other metal level is that the multiple single metal level formed by one or more in titanium, nickel, platinum and gold is compounded to form.
3. a kind of diamond Schottky diode as claimed in claim 1 or 2, is characterized in that, described Schottky electrode (4) is set to field plate structure, and field plate structure dielectric layer is one or more materials.
4. a kind of diamond Schottky diode as claimed in claim 1 or 2, it is characterized in that, described Ohmic electrode (1) is single metal level or composite bed, wherein, described single metal level is deposited by the one in palladium, titanium, gold, nickel and platinum and is formed, and described composite bed is be compounded to form by the multiple single metal level that in palladium, titanium, gold, nickel and platinum, one or more are formed.
5. a kind of diamond Schottky diode as claimed in claim 1 or 2, is characterized in that, in the highly doped diamond substrate of described P type (2), the content of boron atom is N
a>10
19cm
-3.
6. a kind of diamond Schottky diode as claimed in claim 1 or 2, is characterized in that, described drift layer (3) is the low-doped diamond layer of P type or intrinsic diamond layer, and wherein in the low-doped diamond layer of P type, the content of boron atom is N
a<10
17cm
-3.
7. a kind of diamond Schottky diode as claimed in claim 1 or 2, is characterized in that, the annealed process of described diamond Schottky diode.
8. the manufacture method of the diamond Schottky diode as described in as arbitrary in claim 1 to 7, it is characterized in that, the method comprises following:
First, at the highly doped diamond substrate of P type (2) Epitaxial growth one deck low-doped diamond layer of P type or intrinsic diamond layer as drift layer (3);
Then, form Schottky electrode (4) in drift layer (3) upper surface deposition, described Schottky electrode (4) is for single hafnium layer structure or comprise the lamination layer structure that bottom is the multiple single metal level of single hafnium layer; At the highly doped diamond substrate of P type (2) lower surface plated metal, form Ohmic electrode (1).
9. the manufacture method of a kind of diamond Schottky diode as claimed in claim 8, is characterized in that, the method also comprises the annealing in process after deposition formation Schottky electrode (4) and Ohmic electrode (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510023353.8A CN104617159A (en) | 2015-01-17 | 2015-01-17 | Diamond schottky diode and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510023353.8A CN104617159A (en) | 2015-01-17 | 2015-01-17 | Diamond schottky diode and manufacturing method thereof |
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| CN104617159A true CN104617159A (en) | 2015-05-13 |
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ID=53151516
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| CN201510023353.8A Pending CN104617159A (en) | 2015-01-17 | 2015-01-17 | Diamond schottky diode and manufacturing method thereof |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024861A (en) * | 2016-05-31 | 2016-10-12 | 天津理工大学 | Two-dimensional black phosphorus/transitional metal chalcogenide heterojunction device and preparation method therefor |
| CN108492905A (en) * | 2018-05-28 | 2018-09-04 | 吉林大学 | A kind of diamond PIM Schottky types β radiation volta effect nuclear battery |
| CN112382669A (en) * | 2020-10-10 | 2021-02-19 | 西安电子科技大学 | Pseudo-vertical diamond avalanche diode and preparation method thereof |
| CN112382670A (en) * | 2020-10-10 | 2021-02-19 | 西安电子科技大学 | Avalanche diode based on high-purity intrinsic monocrystalline diamond and preparation method |
| CN114068681A (en) * | 2021-11-17 | 2022-02-18 | 哈尔滨工业大学 | Diamond Schottky diode-based logic device working at high temperature and preparation method thereof |
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|---|---|---|---|---|
| US3700979A (en) * | 1971-04-07 | 1972-10-24 | Rca Corp | Schottky barrier diode and method of making the same |
| JPH05160386A (en) * | 1991-12-09 | 1993-06-25 | Fuji Electric Co Ltd | Diamond diode and manufacture thereof |
| JPH0687682A (en) * | 1992-09-04 | 1994-03-29 | Idemitsu Petrochem Co Ltd | Diamond element |
| JP2012084702A (en) * | 2010-10-13 | 2012-04-26 | National Institute Of Advanced Industrial & Technology | Diamond electronic element and manufacturing method thereof |
| CN204516774U (en) * | 2015-01-17 | 2015-07-29 | 王宏兴 | A kind of diamond Schottky diode |
-
2015
- 2015-01-17 CN CN201510023353.8A patent/CN104617159A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3700979A (en) * | 1971-04-07 | 1972-10-24 | Rca Corp | Schottky barrier diode and method of making the same |
| JPH05160386A (en) * | 1991-12-09 | 1993-06-25 | Fuji Electric Co Ltd | Diamond diode and manufacture thereof |
| JPH0687682A (en) * | 1992-09-04 | 1994-03-29 | Idemitsu Petrochem Co Ltd | Diamond element |
| JP2012084702A (en) * | 2010-10-13 | 2012-04-26 | National Institute Of Advanced Industrial & Technology | Diamond electronic element and manufacturing method thereof |
| CN204516774U (en) * | 2015-01-17 | 2015-07-29 | 王宏兴 | A kind of diamond Schottky diode |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106024861A (en) * | 2016-05-31 | 2016-10-12 | 天津理工大学 | Two-dimensional black phosphorus/transitional metal chalcogenide heterojunction device and preparation method therefor |
| CN108492905A (en) * | 2018-05-28 | 2018-09-04 | 吉林大学 | A kind of diamond PIM Schottky types β radiation volta effect nuclear battery |
| CN112382669A (en) * | 2020-10-10 | 2021-02-19 | 西安电子科技大学 | Pseudo-vertical diamond avalanche diode and preparation method thereof |
| CN112382670A (en) * | 2020-10-10 | 2021-02-19 | 西安电子科技大学 | Avalanche diode based on high-purity intrinsic monocrystalline diamond and preparation method |
| CN112382669B (en) * | 2020-10-10 | 2022-05-24 | 西安电子科技大学 | Pseudo-vertical diamond avalanche diode and preparation method thereof |
| CN112382670B (en) * | 2020-10-10 | 2022-05-24 | 西安电子科技大学 | Avalanche diode based on high-purity intrinsic monocrystalline diamond and preparation method |
| CN114068681A (en) * | 2021-11-17 | 2022-02-18 | 哈尔滨工业大学 | Diamond Schottky diode-based logic device working at high temperature and preparation method thereof |
| CN114068681B (en) * | 2021-11-17 | 2024-04-05 | 哈尔滨工业大学 | Logic device working at high temperature based on diamond Schottky diode and preparation method thereof |
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Application publication date: 20150513 |