CN102496572A - Fast recovery epitaxial diode and preparation method thereof - Google Patents
Fast recovery epitaxial diode and preparation method thereof Download PDFInfo
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Abstract
The invention relates to a fast recovery epitaxial diode comprising a metal cathode layer, an N + substrate silicon chip, a first epitaxial layer, a second epitaxial layer, a third epitaxial layer, wherein the above-mentioned parts are successively connected. A mesa silicon groove penetrates the third epitaxial layer and is extended into the second epitaxial layer; a glass passivation layer that is arranged inside the mesa silicon groove and is provided with a window is extended to the top surface of the third epitaxial layer; and a metal anode layer that is arranged at the upper portion of the glass passivation layer passes through the window that is arranged on the glass passivation layer and then is connected with the third epitaxial layer. According to the invention, an epitaxial technology is used to accurately control impurity concentration and thickness of all the epitaxial layers; and a mesa channeling technology and a glass passiviation technology are utilized to manufacture a terminal structure, thereby substantially reducing a technology flow. Besides, the fast recovery epitaxial diode has good consistency and repeatability; high quality characteristics including low forward direction voltage drop, super speediness, and soft recovery characteristic and the like of the fast recovery epitaxial diode can be easily realized.
Description
Technical field
The present invention relates to a kind of fast recovery epitaxial type diode and preparation method thereof, belong to technical field of semiconductor device.
Background technology
FRED is as novel electric power semiconductor device of new generation; Have advantages such as high-frequency, high voltage, big electric current, low-loss and low electromagnetic interference, be known as the most representative device of power electronic technology revolution for the third time by the International Power electron trade with IGBT.FRED can be used as the PFC diode, the output rectifier diode, and catching diode, absorption diode use separately; Also can be used as the supporting use of fly-wheel diode and IGBT, FRED single tube and module and be widely used in electric machine speed regulation soon with the mould of IGBT combination, as: washing machine; Air conditioner; Refrigerator, electric automobile, urban track traffic, locomotive traction, various blower fan, water pump and wind-force and solar power system, its energy conservation and consumption reduction effects is fairly obvious.FRED also can be used for the various Switching Power Supplies of communication and data processing, electric welding machine, electrostatic induction heating, demonstration, nulcear magnetic resonance (NMR), and illumination and communications and transportation, electricity-saving lamp and military affairs and aviation have vast market prospect.
At present, the preparation method of extension type fast recovery diode (FRED) adopts N type epitaxial silicon chip as material, and P type active area adopts ion to inject or the method for boron diffusion realizes; So in manufacturing process, need be through peroxidating, photoetching active area, ion injection, knot, photoetching electrode hole, metallization, photoetching metal, deposit passivation layer, photoetching passivation layer, wafer thinning, back side metallization technology, in manufacturing process; Need repeatedly that ion injects, high temperature knot and at least four photoetching, complicated operation not only, production process is many; Technological process is long; And the production cycle is long, causes manufacturing cost high, and the market competitiveness is poor.
Summary of the invention
It is short to the purpose of this invention is to provide a kind of technological process, fast recovery epitaxial type diode of consistency and good reproducibility and preparation method thereof.
The present invention is that the technical scheme that achieves the above object is: a kind of preparation method of fast recovery epitaxial type diode is characterized in that: according to the following steps,
(1), first outer layer growth: at first epitaxial loayer of the positive N type more than one deck of growing of N+ type silicon substrate, its gross thickness is controlled at 1～300 μ m, resistivity at 1～150 ohmcm;
(2), second outer layer growth: second epitaxial loayer of growth one deck P type on first epitaxial loayer, its THICKNESS CONTROL is at 1～30 μ m, impurity concentration is controlled at 10
13～10
18Cm
-3
(3), the 3rd outer layer growth: the 3rd epitaxial loayer of growth one deck P+ type on second epitaxial loayer, its THICKNESS CONTROL is at 0～10 μ m, impurity concentration is controlled at 10
18～10
22Cm
-3
(4), minority carrier life time control: silicon chip is mixed with heavy metal or the helium injection, or, the diode reverse recovery time is controlled at 5～500ns with electronics or neutron irradiation silicon chip;
(5), the terminal table top is made: at the front surface coated photoresist of silicon chip; Carry out making table top silicon groove after photoetching process, the corrosion; The degree of depth of table top silicon groove is controlled at 5～50 μ m, and the degree of depth of table top silicon groove is passed the 3rd epitaxial loayer and second epitaxial loayer and extended in first epitaxial loayer;
(6), watch crystal passivation: at table top silicon groove and silicon chip surface filling glass powder, form glass passivation layer at 600～900 ℃ of sintering temperature 10～60min then with knife coating or photoresist method;
(7), metal level deposit: the front at silicon chip forms 1～8 μ m metal level with sputter, electron beam evaporation or plating or chemical plating;
(8), photoetching metal level: after applying photoresist on the metal level, through photoetching, erode the metal level beyond the active area, form the metal anode layer;
(9), alloy: in the condition of vacuum or nitrogen or under the condition of nitrogen and hydrogen, carry out alloy, alloy temperature is controlled at 300 ℃～500 ℃, and the time forms the metal anode layer at 30～60min;
(10), thinning back side: with the wafer lapping machine silicon chip back of polishing, with wafer thinning to 150～400 μ m;
(11), back face metalization: with one of them of sputter, electron beam evaporation, plating or chemical plating form 1000～20000
metal layer on back do; Form the metallic cathode layer, make fast recovery epitaxial type diode.
Wherein: first epitaxy layer thickness of said N type can be controlled in 30～200 μ m, resistivity at 20～100 ohmcms; Second epitaxy layer thickness of P type is controlled at 5～18 μ m, and the THICKNESS CONTROL of the 3rd epitaxial loayer of P+ type is at 2～8 μ m.
Fast recovery epitaxial type diode of the present invention; It is characterized in that: comprise the metallic cathode layer, N+ silicon substrate, first epitaxial loayer, second epitaxial loayer and the 3rd epitaxial loayer that are connected successively; Table top silicon groove passes the 3rd epitaxial loayer and extends in second epitaxial loayer; The glass passivation layer that is arranged in the table top silicon groove extends to the 3rd epitaxial loayer end face; And glass passivation layer is provided with window, is arranged on the window that the metal anode layer on glass passivation layer top passes on the glass passivation layer and is connected with the 3rd epitaxial loayer.
After the present invention adopts technique scheme: have the following advantages:
1, the present invention utilizes grown successively on the N+ type silicon substrate of high concentration first epitaxial loayer of N type, second epitaxial loayer of P type and the 3rd epitaxial loayer of P+ type; First epitaxial loayer that therefore can pass through the N type is as the drift region; Second epitaxial loayer of P type is as active area; Improve the ohmic contact of metal anode and silicon chip through the 3rd epitaxial loayer of P+, and stop of the expansion of PN junction reverse blocking time space charged region to metal anode.Each layer structure such as conduction type, impurity concentration and epitaxy layer thickness in the fast recovery diode of the present invention are accurately controlled by epitaxy technique; In the 3rd epitaxial loayer and second epitaxial loayer and first epitaxial loayer, make table top silicon groove through table top grooving technology; Behind sintering, form glass passivation layer through glassivation technology at table top filling glass powder again; Therefore fast recovery diode terminal structure of the present invention adopts table top grooving technology and glassivation technology controlling and process, has cancelled technologies such as needing oxidation, repeatedly ion injection, high temperature knot in the original technology, and especially the photoetching number of times reduces to 2 times by original 4 times; Shortened technological process greatly; Practice thrift a large amount of water, electricity, gas body and chemical reagent, reduced environmental pollution, reduced cost of manufacture.
2, the present invention is first epitaxial loayer of direct growth N type on the N+ of high concentration type silicon substrate; And at second epitaxial loayer of first epitaxial loayer direct growth one deck P type of N type; Therefore replace original P type active area with ion injection or diffusion method making; Because impurity concentration and thickness that each epitaxial loayer is grown can accurately be controlled; So adopt uniformity, consistency, the repeatability of the fast recovery epitaxial type diode parameter that preparation method of the present invention makes all more fine, realize high-quality characteristics such as the low forward voltage drop of fast recovery diode, supper-fast, soft recovery characteristics easily.
Description of drawings
Below in conjunction with accompanying drawing embodiments of the invention are done further detailed description.
Fig. 1 is the structural representation of fast recovery diode chip of the present invention.
Wherein: 1-metallic cathode layer, 2-N+ silicon substrate, 3-first epitaxial loayer, 4-second epitaxial loayer, 5-table top silicon groove, 6-glass passivation layer, 7-the 3rd epitaxial loayer, 8-metal anode layer.
Embodiment
The preparation method of fast recovery epitaxial type diode of the present invention, according to the following steps:
(1), first outer layer growth: first epitaxial loayer of the N type more than the positive growth of N+ type silicon substrate one deck; Its gross thickness is controlled at 1～300 μ m, resistivity at 1～150 ohmcm; First epitaxy layer thickness of this N type can be controlled in 30～200 μ m, resistivity at 20～100 ohmcms; This N type epitaxial loayer can adopt once or twice or three secondary growths, and first epitaxial loayer that makes the positive N type of growing of N+ type silicon substrate is as the drift region.
(2), second outer layer growth: second epitaxial loayer of growth one deck P type on first epitaxial loayer, its THICKNESS CONTROL is at 1～30 μ m, impurity concentration is controlled at 10
13～10
18Cm
-3, this thickness also can be controlled in 5～18 μ m, and second epitaxial loayer of this P type is as active area.
(3), the 3rd outer layer growth: the 3rd epitaxial loayer of growth one deck P+ type on second epitaxial loayer, its THICKNESS CONTROL is at 0～10 μ m, impurity concentration is controlled at 10
18～10
22Cm
-3, this thickness also can be controlled in 2～8 μ m, and the 3rd epitaxial loayer through the P+ type to be improving the ohmic contact of metal anode and silicon chip, and stops the expansion of PN junction reverse blocking time space charged region to metal anode.
(4), minority carrier life time control: silicon chip is mixed with heavy metal or the helium injection; Or with electron irradiation or neutron irradiation silicon chip; The diode reverse recovery time is controlled at 5～500ns; This diode reverse recovery time also can be controlled in 10～400ns, through the control to minority carrier life time, to make quick or supper-fast diode.
(5), the terminal table top is made: at the front surface coated photoresist of silicon chip; Carry out making table top silicon groove after photoetching process, the corrosion; The degree of depth of table top silicon groove is controlled at 5～50 μ m; And the degree of depth of table top silicon groove is passed the 3rd epitaxial loayer and second epitaxial loayer and is extended in first epitaxial loayer, and the degree of depth of this table top silicon groove is no more than the thickness of first epitaxial loayer.
(6), watch crystal passivation: with knife coating or photoresist method at table top silicon groove and silicon chip surface filling glass powder; I.e. table top filling glass powder at the terminal; Form glass passivation layer at 600～900 ℃ of sintering temperature 10～60min then, the controllable thickness of this glass passivation layer is built in 1～20 μ m.
(7), metal level deposit: the front at silicon chip forms 1～8 μ m metal level with sputter, electron beam evaporation or plating or chemical plating, and this metal level is the metal composite layer of titanium and nickel and silver, or the metal level of gold or nickel.
(8), photoetching metal level: after applying photoresist on the metal level, through photoetching, erode the metal level beyond the active area, form the metal anode layer.
(9), alloy: vacuum or nitrogen/with the condition of hydrogen under carry out alloy; Alloy temperature is controlled at 300 ℃～500 ℃; Time is at 30～60min, this alloy THICKNESS CONTROL 100～2000
(10), thinning back side: with the wafer lapping machine silicon chip back of polishing, with wafer thinning to 150～400 μ m.
(11), back face metalization: with one of them of sputter, electron beam evaporation, plating or chemical plating form 1000～20000
metal layer on back; Form the metallic cathode layer, make fast recovery epitaxial type diode.
See shown in Figure 1; Fast recovery epitaxial type diode of the present invention comprises the metallic cathode layer 1 that is connected successively, N+ silicon substrate 2, first epitaxial loayer 3, second epitaxial loayer 4 and the 3rd epitaxial loayer 7, and this first epitaxial loayer 3 is a N type epitaxial loayer; Second epitaxial loayer 4 is the epitaxial loayer of P type; And the 3rd epitaxial loayer 7 is a P+ type epitaxial loayer, and table top silicon groove 5 runs through and is arranged on the 3rd epitaxial loayer 7 and second epitaxial loayer 4 and extends in first epitaxial loayer 3, makes table top silicon groove 5 not run through first epitaxial loayer 3; Make silicon chip surface and table top silicon groove 5 formation terminal table tops; Be arranged on the end face that glass passivation layer 6 in the table top silicon groove 5 extend to the 3rd epitaxial loayer 7, and glass passivation layer 6 is provided with window, is arranged on the window that the metal anode layer 8 on glass passivation layer 6 tops passes on the glass passivation layer 6 and is connected with the 3rd epitaxial loayer 7.
Claims (4)
1. fast preparation method who recovers epitaxial type diode is characterized in that: according to the following steps,
(1), first outer layer growth: at first epitaxial loayer of the positive N type more than one deck of growing of N+ type silicon substrate, its gross thickness is controlled at 1～300 μ m, resistivity at 1～150 ohmcm;
(2), second outer layer growth: second epitaxial loayer of growth one deck P type on first epitaxial loayer, its THICKNESS CONTROL is at 1～30 μ m, impurity concentration is controlled at 10
13～10
18Cm
-3
(3), the 3rd outer layer growth: the 3rd epitaxial loayer of growth one deck P+ type on second epitaxial loayer, its THICKNESS CONTROL is at 0～10 μ m, impurity concentration is controlled at 10
18～10
22Cm
-3
(4), minority carrier life time control: silicon chip is mixed with heavy metal or the helium injection, or, the diode reverse recovery time is controlled at 5～500ns with electronics or neutron irradiation silicon chip;
(5), the terminal table top is made: at the front surface coated photoresist of silicon chip; Carry out making table top silicon groove after photoetching process, the corrosion; The degree of depth of table top silicon groove is controlled at 5～50 μ m, and the degree of depth of table top silicon groove is passed the 3rd epitaxial loayer and second epitaxial loayer and extended in first epitaxial loayer;
(6), watch crystal passivation: at table top silicon groove and silicon chip surface filling glass powder, form glass passivation layer at 600～900 ℃ of sintering temperature 10～60min then with knife coating or photoresist method;
(7), metal level deposit: the front at silicon chip forms 1～8 μ m metal level with sputter, electron beam evaporation or plating or chemical plating;
(8), photoetching metal level: after applying photoresist on the metal level, through photoetching, erode the metal level beyond the active area, form the metal anode layer;
(9), alloy: in the condition of vacuum or nitrogen or under the condition of nitrogen and hydrogen, carry out alloy, alloy temperature is controlled at 300 ℃～500 ℃, and the time forms the metal anode layer at 30～60min;
(10), thinning back side: with the wafer lapping machine silicon chip back of polishing, with wafer thinning to 150～400 μ m;
(11), back face metalization: with one of them of sputter, electron beam evaporation, plating or chemical plating form 1000～20000
metal layer on back do; Form the metallic cathode layer, make fast recovery epitaxial type diode.
2. the preparation method of fast recovery epitaxial type diode according to claim 1 is characterized in that: first epitaxy layer thickness of said N type can be controlled in 30～200 μ m, resistivity at 20～100 ohmcms.
3. the preparation method of fast recovery epitaxial type diode according to claim 1 is characterized in that: second epitaxy layer thickness of said P type is controlled at 5～18 μ m, and the THICKNESS CONTROL of the 3rd epitaxial loayer is at 2～8 μ m.
4. the fast recovery epitaxial type diode that the preparation method of fast recovery epitaxial type diode according to claim 1 makes; It is characterized in that: comprise the metallic cathode layer, N+ silicon substrate, first epitaxial loayer, second epitaxial loayer and the 3rd epitaxial loayer that are connected successively; Table top silicon groove passes the 3rd epitaxial loayer and second epitaxial loayer and extends in first epitaxial loayer; The glass passivation layer that is arranged in the table top silicon groove extends to the 3rd epitaxial loayer end face; And glass passivation layer is provided with window, is arranged on the window that the metal anode layer on glass passivation layer top passes on the glass passivation layer and is connected with the 3rd epitaxial loayer.
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|---|---|---|---|---|
| CN103531616A (en) * | 2013-10-30 | 2014-01-22 | 国家电网公司 | Groove-type fast recovery diode and manufacturing method thereof |
| CN103578978A (en) * | 2013-10-17 | 2014-02-12 | 北京时代民芯科技有限公司 | Method for manufacturing high-voltage fast recovery diodes based on silicon-based bonding materials |
| CN104465330A (en) * | 2014-12-25 | 2015-03-25 | 安徽安芯电子科技有限公司 | Rectifier diode, chip and manufacturing method thereof |
| CN104616983A (en) * | 2015-01-31 | 2015-05-13 | 上海华虹宏力半导体制造有限公司 | Backside metallization process |
| CN104269356B (en) * | 2014-09-29 | 2017-05-10 | 西安卫光科技有限公司 | Method for manufacturing 50A high-current fast recovery diode |
| WO2017084341A1 (en) * | 2015-11-19 | 2017-05-26 | 株洲中车时代电气股份有限公司 | Reverse conducting igbt device and manufacturing method therefor |
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| CN112382670A (en) * | 2020-10-10 | 2021-02-19 | 西安电子科技大学 | Avalanche diode based on high-purity intrinsic monocrystalline diamond and preparation method |
| CN115775836A (en) * | 2022-12-19 | 2023-03-10 | 扬州国宇电子有限公司 | Mesa structure fast recovery diode and preparation method thereof |
| US11757048B1 (en) | 2022-05-31 | 2023-09-12 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminal |
| WO2023231382A1 (en) * | 2022-05-31 | 2023-12-07 | 中国电子科技集团公司第十三研究所 | Positive-angle lapping gallium oxide schottky diode device and manufacturing method therefor |
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| CN103578978A (en) * | 2013-10-17 | 2014-02-12 | 北京时代民芯科技有限公司 | Method for manufacturing high-voltage fast recovery diodes based on silicon-based bonding materials |
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| US10319595B2 (en) | 2015-11-19 | 2019-06-11 | ZhuZhou CRRC Times Electric Co., Ltd. | Reverse conducting IGBT device and manufacturing method therefor |
| CN109801978A (en) * | 2019-03-13 | 2019-05-24 | 捷捷半导体有限公司 | Low pressure drop diode and preparation method thereof |
| CN109801978B (en) * | 2019-03-13 | 2024-03-19 | 捷捷半导体有限公司 | Low-voltage drop diode and preparation method thereof |
| CN112002765A (en) * | 2020-08-27 | 2020-11-27 | 北京时代民芯科技有限公司 | Silicon rectifier diode chip for three-dimensional integrated array packaging |
| CN112382670A (en) * | 2020-10-10 | 2021-02-19 | 西安电子科技大学 | Avalanche diode based on high-purity intrinsic monocrystalline diamond and preparation method |
| US11757048B1 (en) | 2022-05-31 | 2023-09-12 | The 13Th Research Institute Of China Electronics Technology Group Corporation | Method for producing gallium oxide Schottky barrier diode with negative beveled angle terminal |
| WO2023231382A1 (en) * | 2022-05-31 | 2023-12-07 | 中国电子科技集团公司第十三研究所 | Positive-angle lapping gallium oxide schottky diode device and manufacturing method therefor |
| CN115775836A (en) * | 2022-12-19 | 2023-03-10 | 扬州国宇电子有限公司 | Mesa structure fast recovery diode and preparation method thereof |
| CN115775836B (en) * | 2022-12-19 | 2023-09-05 | 扬州国宇电子有限公司 | Mesa structure fast recovery diode and preparation method thereof |
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Application publication date: 20120613 |