RU2654352C1 - Three-electrode semiconductor device - Google Patents

Abstract

FIELD: electricity.

SUBSTANCE: use: to create ultra-high and extremely high frequency monolithic integrated circuits. Essence of the invention consists in that the three-electrode semiconductor device contains two Schottky contacts of the high-frequency section placed on it and one control electrode forming an ohmic contact and located outside the space between contacts in the high-frequency section, Schottky contacts of the high-frequency section are made in the form of a counter-pin system of metallization and are formed to the upper, active layer of the semiconductor structure, and the control electrode is formed to the high-alloy layer of the semiconductor structure, which is located behind the active layer of the semiconductor structure.

EFFECT: technical result: providing the possibility of an increase in the transmission coefficient of frequency converters, reducing the phase noise of generators and increasing the selectivity of electrically tunable filters of ultra-high and extremely high frequency ranges.

1 cl, 2 dwg

Description

The invention relates to the field of microelectronics and radio engineering and can be used to create microwave and EHF monolithic integrated circuits.

Varactor diodes with a Schottky barrier on gallium arsenide, including integrated diode pairs with series and parallel connection of Schottky diodes with surface-oriented terminals, are used in hybrid and monolithic integrated circuits of frequency converters, generators and electrically tunable filters of microwave receivers (RPUs) and EHF bands. However, the use of varactor diodes in the microwave and EHF band circuits is limited by low Q factors and the resulting high insertion loss. A prerequisite for the development of elements with high quality factor is the inclusion of diodes, which is widespread at microwave frequencies, when both poles of a semiconductor device are at the same DC potential and special measures must be taken to supply a control potential.

In the patent [1. US 3699408, Low barrier height gallium arsenide microwave Schottky diodes using gold-germanium alloy] describes a Schottky barrier diode consisting of a highly doped gallium arsenide substrate placed on it with an epitaxial layer and formed to the specified epitaxial layer of the electrode providing Schottky contact. The disadvantage of this design is the high series resistance of the Schottky diode base. In the patent [2. RU 2354010, Three-electrode high-frequency semiconductor device] describes a semiconductor device adopted for the prototype, containing a semiconductor epitaxial layer on a substrate, placed on it two Schottky contacts of the high-frequency path and one control contact made ohmic, and located outside the space between the contacts in the high-frequency path.

The disadvantage of the prototype is the high serial resistance of the base of the Schottky diode, low value of the quality factor.

The problem to which the invention is directed is to reduce the series resistance of the Schottky diode base, increase the quality factor of a semiconductor device.

To solve this problem, we propose a three-electrode semiconductor device containing two Schottky contacts of the high-frequency path and one control electrode that forms an ohmic contact and located outside the space between the contacts in the high-frequency path.

According to the invention, the Schottky contacts of the high-frequency path are made in the form of an interdigital metallization system and are formed to the upper, active, layer of the semiconductor structure, and the control electrode is formed to the high-alloyed layer of the semiconductor structure, which is located behind the active layer of the semiconductor structure.

The technical result is to increase the transmission coefficient of frequency converters, reduce phase noise of generators and increase the selectivity of electrically tunable microwave and high-frequency filters, based on the proposed device.

The combination of distinctive features and properties of the proposed device from the literature are not known, therefore, the invention meets the criteria of novelty and inventive step.

The figure 1 shows a schematic representation of a three-electrode semiconductor device. The figure 2 shows a schematic cross-sectional view of a three-electrode semiconductor device.

For example, consider a three-electrode semiconductor device (Figure 1, Figure 2) on a multilayer semiconductor structure of gallium arsenide, consisting of a semi-insulating substrate (1), a buffer layer (not shown in the figures), a high-alloy layer (2), an active layer (4). On the floor of the insulating substrate (1), a buffer layer (not shown in the figures), a highly doped layer (2) and an active layer (4) are successively grown by molecular beam or gas-phase epitaxy (3). Fundamentals of materials science and technology of semiconductors, Sluchinskaya IA, M: Mir, 2002 - 376 p.]. A buffer layer (not shown in the figures) is necessary to reduce the effect of defects in the semi-insulating substrate (1). Next is a highly alloyed layer (2), on which a control electrode (3) is formed, forming an ohmic contact. Next is the active layer (4), on which an interdigital electrode metallization system of electrodes (5) and (6) is formed, forming a Schottky contact, and the control electrode (3) is located outside the space between the interdigital electrode metallization system (5) and ( 6). The electrodes (5) and (6) are intended for inclusion in the high-frequency path (not shown in the figures), and the control electrode (3) is used to supply the control voltage.

In the absence of voltage at the control electrode (3) and the supply of a high-frequency signal to the electrodes (5) and (6), this signal passes between the electrodes (5) and (6) through the conductive regions (not shown in the figures) of the layers (2) and ( four). When voltage is applied to the control electrode (3), the space charge region under the electrodes (5) and (6) increases and, accordingly, the capacitance created by them. This capacitance changes in accordance with a change in the control voltage at the control electrode (3).

Claims (1)

A three-electrode semiconductor device containing two high-frequency channel Schottky contacts and one control electrode forming an ohmic contact and located outside the space between the contacts in the high-frequency channel, characterized in that the high-frequency channel Schottky contacts are made in the form of an interdigital metallization system and are formed to the upper, active, layer of the semiconductor structure, and the control electrode is formed to a highly doped layer of the semiconductor structure, which ory located behind the active layer of the semiconductor structure.

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