CN109768116A - Preparation method of gallium arsenide solar cell - Google Patents
Preparation method of gallium arsenide solar cell Download PDFInfo
- Publication number
- CN109768116A CN109768116A CN201811594240.3A CN201811594240A CN109768116A CN 109768116 A CN109768116 A CN 109768116A CN 201811594240 A CN201811594240 A CN 201811594240A CN 109768116 A CN109768116 A CN 109768116A
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- China
- Prior art keywords
- epitaxial wafer
- battery
- gluing
- solar cell
- preparation
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 14
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 title claims abstract description 13
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 26
- 230000007797 corrosion Effects 0.000 claims abstract description 17
- 238000005260 corrosion Methods 0.000 claims abstract description 17
- 238000001704 evaporation Methods 0.000 claims abstract description 9
- 230000008020 evaporation Effects 0.000 claims abstract description 9
- 238000001259 photo etching Methods 0.000 claims abstract description 9
- 238000005530 etching Methods 0.000 claims abstract description 8
- 239000003292 glue Substances 0.000 claims abstract description 4
- 239000007788 liquid Substances 0.000 claims description 20
- 229920002120 photoresistant polymer Polymers 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 12
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 12
- 230000001681 protective effect Effects 0.000 claims description 11
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 claims description 9
- 238000001771 vacuum deposition Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 8
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000007740 vapor deposition Methods 0.000 claims description 4
- MLBBQNBMKUBBSG-UHFFFAOYSA-N [O].[O].[N+](=O)(O)[O-] Chemical compound [O].[O].[N+](=O)(O)[O-] MLBBQNBMKUBBSG-UHFFFAOYSA-N 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000006117 anti-reflective coating Substances 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 239000008367 deionised water Substances 0.000 claims description 3
- 229910021641 deionized water Inorganic materials 0.000 claims description 3
- 238000002372 labelling Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 12
- 230000007547 defect Effects 0.000 abstract description 3
- 230000008092 positive effect Effects 0.000 abstract description 3
- 239000011248 coating agent Substances 0.000 abstract 3
- 238000000576 coating method Methods 0.000 abstract 3
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002955 isolation Methods 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 229910052785 arsenic Inorganic materials 0.000 description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000003518 caustics Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A preparation method of a gallium arsenide solar cell comprises the following process steps of (1) pre-baking an epitaxial wafer, gluing, etching, removing glue, (2) pattern photoetching, (3) evaporation coating of a cell upper electrode and a cell lower electrode, (4) evaporation coating of a cell lower electrode, (5) heat treatment of the cell, (6) product marking, (7) corrosion of a CAP layer, (8) evaporation coating of an antireflection film. The invention has the advantages and positive effects that: in the embodiment of the invention, the sections of the active regions at the edges of the cell are obtained by corrosion, so that the problem of edge electric leakage caused by mechanical defects of scribing at the edges of the cell can be effectively solved, and the problem of preparation of the edge nonlinear gallium arsenide solar cell can be solved.
Description
Technical field
The invention belongs to physical power source technical fields, more particularly to a kind of using three-junction gallium arsenide as III-V race of representative
The preparation method of compound batteries.
Background technique
For improve epitaxial wafer utilization rate, at present the part edge of solar cell be it is arc-shaped, with space flight common 40 ×
The battery of 60 sizes is compared, and the utilization rate of epitaxial wafer is increased to 90.7% from 60.8%, increases about 50%.Due to epitaxial wafer
Edge is in short-circuit condition, therefore needs to carry out scribing or corrosion to extension edge during making single battery, removes this
PN junction in region guarantees solar cell performance.The preparation method of traditional gallium arsenide cells only carries out scribing to edge, can not
Meet the needs of type solar cell preparation.Therefore, the present invention provides a kind of preparations of novel gallium arsenide solar cell
Method.
Summary of the invention
The problem to be solved in the present invention is to provide a kind of preparation methods of gallium arsenide solar cell.
In order to solve the above technical problems, the technical solution adopted by the present invention is that: a kind of preparation side of gallium arsenide solar cell
Method, it is characterised in that comprise the following steps that:
(1) gluing corrodes
Epitaxial wafer is put and is toasted 30 minutes for 130 DEG C -150 DEG C in an oven, then the gluing under certain revolving speed, photoetching expose
Secondary baking is carried out after light 20s-30s, then the epitaxial wafer after baking is put into developer solution the 30s-60s that develops, to the end of developing
Corroded in corrosive liquid afterwards, finally carries out impregnating and remove photoresist；
(2) figure photoetching
Epitaxial wafer is put and is toasted 30 minutes for 130 DEG C -150 DEG C in an oven, then the gluing under certain revolving speed, photoetching expose
Secondary baking is carried out after light 20s-30s, then the epitaxial wafer after baking is put into developer solution the 30s-60s that develops；
(3) electrode evaporation
Epitaxial wafer light is mounted in down on the fixture of vacuum coating equipment, vapor deposition sequence and each layer metal thickness are gold
The epitaxial wafer that top electrode has been deposited, is then put into acetone soln or NMP is molten by 80nm, germanium 80nm by 3.5 μm -5 μm of silver metal electrodes
30min or more is impregnated in liquid to remove photoresist, and after photoresist removal is clean, is powered on pole-face in battery and is applied protective glue, it is molten in hydrofluoric acid
Lower electrode surface is cleaned and removed photoresist in liquid, is finally mounted in epitaxial wafer backlight down on the fixture of vacuum coating equipment, is steamed
Plating sequence and each layer metal thickness be gold 80nm, germanium 80nm, 3.5 μm -5 μm of silver metal electrodes；
(4) it is heat-treated
The battery that electrode has been deposited is immersed in ethanol solution and is cleaned by ultrasonic, after taking out drying, in vacuum
10min-35min is sintered in sintering furnace；
(5) product labelling
Battery is subjected to scribing along top margin and bottom edge, the number of battery is marked；
(6) corrode CAP layers
Battery is placed in citric acid and hydrogen peroxide corrosive liquid and corrodes CAP layers, is then cleaned 5-10 times with deionized water, finally
Drying or drying product；
(7) antireflective coating is deposited
The battery for corroding CAP layers is placed on the evaporation disc of high vacuum coating unit, is successively deposited in battery light-receiving surface
TiO2Film layer 50nm~65nm and Al2O3Film layer 72nm~96nm.
Further, epitaxial wafer is mixed in dioxysulfate water mixed liquid, hydrochloric acid, dioxysulfate water respectively when gluing corrodes
It closes in liquid and hydrofluoric acid solution and carries out alternating corrosion, bath 6-8 times is carried out after every kind of solution corrosion and obtains etching tank；
Further, epitaxial wafer is corroded when gluing corrodes using nitric acid dioxygen water mixed liquid.
Further, the step of gluing corrodes are as follows: in extension on piece bonding protective film, then carried out in corrosive liquid rotten
Erosion finally impregnates and removes protective film.
The advantages and positive effects of the present invention are:
1, the present invention corrodes isolation channel out in battery edge using gluing etching process, is able to solve edge nonlinear type arsenic
Change the preparation problem of gallium solar cell；
2, the section of battery edge active area passes through corrosion and obtains in the embodiment of the present invention, can effectively solve battery side
Cause edge current leakage problem caused by the mechanical defect of scribing can be combined with boundary-passivated technique and further increase battery side
Marginal plasma amount；
Detailed description of the invention
Fig. 1 dash area is the effective coverage schematic diagram of solar cell of the embodiment of the present invention；
Fig. 2 dash area is battery isolation channel position view after gluing etching process of the embodiment of the present invention.
In figure: 1. isolation channel, 2. gluing protection zone
Specific embodiment
The embodiment of the present invention is described further with reference to the accompanying drawing:
A kind of preparation method of gallium arsenide solar cell, it is characterised in that comprise the following steps that:
(1) gluing corrodes
Epitaxial wafer is put into 130 DEG C -150 DEG C of bakings 30 minutes in an oven, then (the 500r/min- under certain revolving speed
1500r/min) gluing carries out secondary baking after photolithographic exposure 20s-30s, and the temperature of secondary baking is 95 DEG C -110 DEG C, the time
For 7-15min, then the epitaxial wafer after baking is put into developer solution the 30s-60s that develops, wait develop after in corrosive liquid into
Row corrosion is finally carried out impregnating and be removed photoresist；
(2) figure photoetching
Epitaxial wafer is put and is toasted 30 minutes for 130 DEG C -150 DEG C in an oven, then the gluing under certain revolving speed, photoetching expose
Secondary baking is carried out after light 20s-30s, then the epitaxial wafer after baking is put into developer solution the 30s-60s that develops；
(3) electrode evaporation
Epitaxial wafer light is mounted in down on the fixture of vacuum coating equipment, vapor deposition sequence and each layer metal thickness are gold
80nm, germanium 80nm, 3.5 μm -5 μm of silver metal electrodes, vacuum degree is not less than 5 × 10-4Then the extension of top electrode will be deposited in Pa
Piece is put into immersion 30min or more in acetone soln or nmp solution and removes photoresist, after photoresist removal is clean, in battery top electrode
Face applies protective glue, and lower electrode surface is cleaned and removed photoresist in a solution of hydrofluoric acid, is finally mounted in epitaxial wafer backlight down
Vacuum degree is not less than 5 × 10-4On the vacuum coating machine clamp of Pa, vapor deposition sequence and each layer metal thickness be gold 80nm, germanium 80nm,
3.5 μm -5 μm of silver metal electrodes；
(4) it is heat-treated
The battery that electrode has been deposited is immersed in ethanol solution and is cleaned by ultrasonic, after taking out drying, in vacuum
10min-35min is sintered in sintering furnace；
(5) product labelling
Battery is subjected to scribing along top margin and bottom edge, the number of battery is marked；
(6) corrode CAP layers
Battery is placed in citric acid and hydrogen peroxide corrosive liquid and corrodes CAP layers, is then cleaned 5-10 times with deionized water, finally
Drying or drying product；
(7) antireflective coating is deposited
The battery for corroding CAP layers is placed on the evaporation disc of high vacuum coating unit, is successively deposited in battery light-receiving surface
TiO2Film layer 50nm~65nm and Al2O3Film layer 72nm~96nm.
Epitaxial wafer is when gluing corrodes, there are two types of caustic solution,
Method one: it is carried out in dioxysulfate water mixed liquid, hydrochloric acid, dioxysulfate water mixed liquid and hydrofluoric acid solution respectively
Alternating corrosion carries out bath 6-8 times after every kind of solution corrosion and obtains etching tank；
Method two: corroded using nitric acid dioxygen water mixed liquid merely, slot is gone out by control corrosion rate time directly etching
Structure.
The present invention can also by paste specific shape protective film, instead of gluing corrode in gluing photoetching process, reach guarantor
The step of protecting the purpose of epitaxial wafer specific region, i.e. gluing corrosion are as follows: in extension on piece bonding protective film, then in corrosive liquid
Corroded, finally remove protective film, the mode for removing protective film can be toasted for immersion, specific temperature or be shone with ultraviolet lamp
It penetrates.
In gluing corrosion and figure photoetching, photoresist used by gluing protection zone 2 can use positive photoresist or negtive photoresist,
If the region that reticle needs to retain photoresist is metallic pattern region using positive photoresist, if reticle needs using negtive photoresist
The region etched away is metallic region；
The advantages and positive effects of the present invention are:
1, the present invention corrodes isolation channel out in battery edge using gluing etching process, is able to solve edge nonlinear type arsenic
Change the preparation problem of gallium solar cell；
2, the section of battery edge active area passes through corrosion and obtains in the embodiment of the present invention, can effectively solve battery side
Cause edge current leakage problem caused by the mechanical defect of scribing can be combined with boundary-passivated technique and further increase battery side
Marginal plasma amount；
One embodiment of the present invention has been described in detail above, but the content is only preferable implementation of the invention
Example, should not be considered as limiting the scope of the invention.It is all according to all the changes and improvements made by the present patent application range
Deng should still be within the scope of the patent of the present invention.
Claims (4)
1. a kind of preparation method of gallium arsenide solar cell, it is characterised in that comprise the following steps that:
(1) gluing corrodes
Epitaxial wafer is put into 130 DEG C -150 DEG C of bakings 30 minutes in an oven, then gluing, photolithographic exposure under certain revolving speed
Secondary baking is carried out after 20s-30s, then the epitaxial wafer after baking is put into developer solution the 30s-60s that develops, after developing
Corroded in corrosive liquid, finally carries out impregnating and remove photoresist；
(2) figure photoetching
Epitaxial wafer is put into 130 DEG C -150 DEG C of bakings 30 minutes in an oven, then gluing, photolithographic exposure under certain revolving speed
Secondary baking is carried out after 20s-30s, then the epitaxial wafer after baking is put into developer solution the 30s-60s that develops；
(3) electrode evaporation
Epitaxial wafer light being mounted in down on the fixture of vacuum coating equipment, vapor deposition sequence and each layer metal thickness are gold 80nm,
The epitaxial wafer that top electrode has been deposited, is then put into acetone soln or nmp solution by germanium 80nm by 3.5 μm -5 μm of silver metal electrodes
It impregnates 30min or more to remove photoresist, after photoresist removal is clean, powers on pole-face in battery and apply protective glue, in a solution of hydrofluoric acid
Lower electrode surface is cleaned and removed photoresist, is finally mounted in epitaxial wafer backlight down on the fixture of vacuum coating equipment, is deposited suitable
Sequence and each layer metal thickness are gold 80nm, germanium 80nm, 3.5 μm -5 μm of silver metal electrodes；
(4) it is heat-treated
The battery that electrode has been deposited is immersed in ethanol solution and is cleaned by ultrasonic, after taking out drying, in vacuum-sintering
10min-35min is sintered in furnace；
(5) product labelling
Battery is subjected to scribing along top margin and bottom edge, the number of battery is marked；
(6) corrode CAP layers
Battery is placed in citric acid and hydrogen peroxide corrosive liquid and corrodes CAP layers, is then cleaned 5-10 times with deionized water, is finally dried
Or drying product；
(7) antireflective coating is deposited
The battery for corroding CAP layers is placed on the evaporation disc of high vacuum coating unit, TiO is successively deposited in battery light-receiving surface2Film
Layer 50nm~65nm and Al2O3Film layer 72nm~96nm.
2. a kind of preparation method of gallium arsenide solar cell according to claim 1, it is characterised in that: epitaxial wafer is in gluing
When corrosion, carried out in dioxysulfate water mixed liquid, hydrochloric acid, dioxysulfate water mixed liquid and hydrofluoric acid solution respectively alternately rotten
It loses, bath 6-8 times is carried out after every kind of solution corrosion and obtains etching tank.
3. a kind of preparation method of gallium arsenide solar cell according to claim 1, it is characterised in that: epitaxial wafer is in gluing
When corrosion, corroded using nitric acid dioxygen water mixed liquid.
4. a kind of preparation method of gallium arsenide solar cell according to claim 1, it is characterised in that: the step of gluing corrosion
Suddenly are as follows: in extension on piece bonding protective film, then corroded in corrosive liquid, finally impregnate and remove protective film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811594240.3A CN109768116A (en) | 2018-12-25 | 2018-12-25 | Preparation method of gallium arsenide solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811594240.3A CN109768116A (en) | 2018-12-25 | 2018-12-25 | Preparation method of gallium arsenide solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109768116A true CN109768116A (en) | 2019-05-17 |
Family
ID=66451619
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811594240.3A Pending CN109768116A (en) | 2018-12-25 | 2018-12-25 | Preparation method of gallium arsenide solar cell |
Country Status (1)
| Country | Link |
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| CN (1) | CN109768116A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112531077A (en) * | 2020-12-11 | 2021-03-19 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible gallium arsenide solar cell for space |
| CN114899244A (en) * | 2022-04-12 | 2022-08-12 | 中山德华芯片技术有限公司 | Preparation method of gallium arsenide solar cell |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393115A (en) * | 2014-11-18 | 2015-03-04 | 上海空间电源研究所 | One-time corrosion process for multi-junction gallium arsenide solar batteries |
| CN108321084A (en) * | 2017-12-29 | 2018-07-24 | 中国电子科技集团公司第十八研究所 | A kind of solar cell dicing method |
-
2018
- 2018-12-25 CN CN201811594240.3A patent/CN109768116A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104393115A (en) * | 2014-11-18 | 2015-03-04 | 上海空间电源研究所 | One-time corrosion process for multi-junction gallium arsenide solar batteries |
| CN108321084A (en) * | 2017-12-29 | 2018-07-24 | 中国电子科技集团公司第十八研究所 | A kind of solar cell dicing method |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112531077A (en) * | 2020-12-11 | 2021-03-19 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible gallium arsenide solar cell for space |
| CN114899244A (en) * | 2022-04-12 | 2022-08-12 | 中山德华芯片技术有限公司 | Preparation method of gallium arsenide solar cell |
| CN114899244B (en) * | 2022-04-12 | 2023-05-02 | 中山德华芯片技术有限公司 | Preparation method of gallium arsenide solar cell |
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Application publication date: 20190517 |
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