CN105762227A - Method for forming passivated edges for gallium arsenide solar cell - Google Patents
Method for forming passivated edges for gallium arsenide solar cell Download PDFInfo
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- CN105762227A CN105762227A CN201410802452.1A CN201410802452A CN105762227A CN 105762227 A CN105762227 A CN 105762227A CN 201410802452 A CN201410802452 A CN 201410802452A CN 105762227 A CN105762227 A CN 105762227A
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- epitaxial wafer
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Abstract
The present invention relates to a method for forming passivated edges for a gallium arsenide solar cell and belongs to the solar cell technical field. The method for forming the passivated edges for the gallium arsenide solar cell includes the following steps of: (1) upper electrode pattern photoetching: an automatic photoresist applying machine is adopted to apply photoresist on the smooth surface of an epitaxial wafer, and a photoetching machine is adopted to perform exposure, and developing, washing and spin drying or nitrogen drying are carried out; (2) upper electrode evaporation: Au, Ge, Ni and Au evaporation is carried out, the epitaxial wafer is soaked in acetone, and photoresist removing, washing and spin drying are carried out; (3) isolation groove overlay: the photoresist is applied to the smooth surface, the photoresist applied surface is exposed, and the photoresist applied surface is arranged in a developing solution to be subjected to developing, and washing and spin drying or nitrogen drying are carried out; and (4) passivated edge obtaining: an isolation groove is corroded, namely, the epitaxial wafer is soaked in a corrosive liquid so as to be corroded, and washing and spin drying are carried out; and mechanical cutting is performed on the isolation groove, namely, the epitaxial wafer is arranged on a suction disc of an automatic dicing machine so as to be subjected to dicing, so that the isolation groove can be obtained. The method of the present invention has the advantages of simple process, easiness in operation, safety and stability, and can effectively improve the weldability and firmness of electrodes.
Description
Technical field
The invention belongs to technical field of solar cells, the method particularly relating to a kind of gallium arsenide solar cell passivation edge.
Background technology
At present, gallium arsenide solar cell has become, by its high-photoelectric transformation efficiency, high reliability, the high performance and long service life space of new generation power supply gained great popularity.90% space above solar module adopts gallium arsenide solar cell.Gallium arsenide solar cell has become the application of area of solar cell and the focus of research.
Gallium arsenide solar cell marginal existence edge compound, affects the collection at upper/lower electrode of electronics and hole, and then affects the electrical property of solar cell.The few sons of methods minimizing adopting sulfide passivation edge meet more at present.GaAs electrode system conventional at present is Au-Ge-Ag system, but silver electrode is had certain oxidisability by sulfide, electrode system selects unreasonable meeting cause that electrode is oxidized and then make electrical property decline, additionally acquisition passivation edge process is unreasonable makes technical process poor operability, even can cause the technical problems such as hydraulic performance decline.
Summary of the invention
The present invention solves in known technology exist technical problem and provide a kind of gallium arsenide solar cell passivation edge method.
The invention solves the technical problem that the reverse leakage current of background technology existence is big, it is provided that a kind of reasonable and easily operated process and new electrode metal system.
Present invention process technology path:
1. adopt photoetching technique to obtain upper electrode pattern；
2. adopt coater to carry out Au-Ge-Ni-Au metal electrode evaporation；
3. adopt set lithography and obtain isolation channel figure；
4. adopt corrosive liquid corrosion isolation channel or machinery two kinds of methods of scribing isolation channel to obtain passivation edge.
It is an object of the invention to provide one, to have technique simple, it is easy to operation, safety and stability, the method being effectively improved the gallium arsenide solar cell passivation edge of the feature such as solderability and firmness of electrode.
The method at gallium arsenide solar cell of the present invention passivation edge is adopted the technical scheme that:
A kind of gallium arsenide solar cell passivation edge method, be characterized in: gallium arsenide solar cell obtain carry passivation edge comprise the following steps that:
(1) electrode pattern in photoetching
Automatic glue spreaders is adopted to enter bright finish resist coating at epitaxial wafer, then adopt litho machine that coated face is exposed, time of exposure is 8s-10s, the epitaxial wafer that photoetching is good is put into development 60s-90s in developer solution again, rinse 6-8 time with cleaning machine after development completely, finally dry with drier or nitrogen dries up；
(2) electrode on evaporation
Namely epitaxial wafer photoetching faced down loads in coater towards evaporation source, and evaporation order and each layer metal thickness are Au, 50nm；Ge、100nm；Ni、2μm；Au、50nm；Evacuation runs program；Then being put into by the epitaxial wafer being deposited with electrode in acetone and soak, adopt automatic degumming machine to remove photoresist after taking-up, photoresist is removed after totally, adopts automatic rinser to rinse 6-8 time, then dries with drier, completes to remove the process of photoresist；
(3) alignment isolation channel
Automatic glue spreaders is adopted to enter bright finish resist coating at epitaxial wafer, automatic glue spreaders hot plate temperature arranges and ranges for 70 DEG C-80 DEG C, then litho machine alignment sleeve marking is adopted, coated face is exposed, time of exposure is 8s-10s, the epitaxial wafer that photoetching is good is put into development 60s-90s in developer solution again, rinses 6-8 time with cleaning machine after development completely；Finally dry with drier or nitrogen dries up；
(4) passivation edge is obtained
Corrosion isolation channel: configuration corrosive liquid, immerses the epitaxial wafer of complete for photoetching isolation channel in corrosive liquid, constantly shakes up and down, and etching time is 0.5-1.5min；Adopt automatic rinser to rinse 8-10 time, then adopt drying；
Machine cuts isolation channel: be placed on the sucker of automatic scribing machine by the epitaxial wafer of good for photoetching isolation channel, selects wide saw blade to carry out scribing, and saw blade speed is 10mm/s, and the scribing degree of depth is 20 μm；Obtain isolation channel.
So far gallium arsenide solar cell that electrode system is Au-Ge-Ni-Au is completed by corroding isolation channel or machine cuts isolation channel obtains the process at passivation edge.
The method at gallium arsenide solar cell of the present invention passivation edge may also take on following technical scheme:
The method at described gallium arsenide solar cell passivation edge, is characterized in: configuration corrosive liquid is HNO3: HCl=1:3.
The method at described gallium arsenide solar cell passivation edge, is characterized in: automatic glue spreaders is when epitaxial wafer enters bright finish resist coating, and automatic glue spreaders hot plate temperature is 70 DEG C-80 DEG C, toasts 0.8-1.5min.
The present invention has the advantage that and has the benefit effect that
The method technical scheme brand-new owing to have employed the present invention at gallium arsenide solar cell passivation edge, compared with prior art, invention has the following characteristics that
1. adopting Au-Ge-Ni-Au as upper electrode metal system, this system can form good Ohmic contact with cell semiconductor material, and is effectively increased solderability and the firmness of electrode, and will not cure thing oxidation simultaneously.
2. the present invention adopts alignment corrosion isolation channel or machinery groove-scribing method to obtain needing the edge of passivation, and both approaches is easily operated, and can realize automatization.
Accompanying drawing explanation
Fig. 1 is electrode grating figure shape lithography layout in the present invention；
Fig. 2 is the boundary-passivated battery structure schematic diagram of the present invention；
Fig. 3 is overlay mark schematic diagram of the present invention；
Fig. 4 is isolation channel lithography layout of the present invention.
In figure, the upper electrode of 1-, 2-isolation channel, 3-epitaxial wafer.
Detailed description of the invention
For the summary of the invention of the present invention, feature and effect can be further appreciated that, hereby enumerate following example, and be described with reference to the accompanying drawings as follows:
Accompanying drawings 1, Fig. 2, Fig. 3 and Fig. 4.
Embodiment 1
The method at gallium arsenide solar cell of the present invention passivation edge, including following technical process:
Electrode pattern in step 1, photoetching
Adopting automatic glue spreaders to enter bright finish resist coating at epitaxial wafer, automatic glue spreaders hot plate temperature arranges and ranges for 70 DEG C-80 DEG C, toasts 1min.Then adopting litho machine that coated face is exposed, time of exposure is 8s-10s, and reticle figure is as shown in Figure 1.The epitaxial wafer that photoetching is good is put into development 60s-90s in developer solution again, rinses 6-8 time with cleaning machine after development completely.Finally dry with drier or nitrogen dries up.Now epitaxial wafer enters bright finish figure as shown in Figure 1.
Electrode on step 2, evaporation
Epitaxial wafer photoetching being faced down and namely load in coater towards evaporation source, arrange evaporation process, evaporation order with each layer metal thickness is: Au, 50nm；Ge, 100nm；Ni, 2 μm；Au, 50nm.Evacuation runs program.Complete the manufacturing process of upper electrode 1 in Fig. 2.Then the epitaxial wafer being deposited with electrode being put into immersion 20min in acetone, adopts automatic degumming machine to remove photoresist after taking-up, photoresist is removed after totally, adopts automatic rinser to rinse 6-8 time, then dries with drier, completes to remove the process of photoresist.Then form figure and go up electrode grating figure shape as shown in Figure 1.
Step 3, alignment isolation channel
Adopting automatic glue spreaders to enter bright finish resist coating at epitaxial wafer, automatic glue spreaders hot plate temperature arranges and ranges for 70 DEG C-80 DEG C, toasts 1min.Then adopting litho machine alignment sleeve marking as it is shown on figure 3, coated face is exposed after alignment, time of exposure is 8s-10s, and reticle figure is as shown in Figure 4.The epitaxial wafer that photoetching is good is put into development 60s-90s in developer solution again, rinses 6-8 time with cleaning machine after development completely.Finally dry with drier or nitrogen dries up.Now epitaxial wafer enters bright finish figure as shown in Figure 4.
Step 4, acquisition passivation edge
Method one: corrosion isolation channel
Configuration corrosive liquid, HNO3: HCl=1:3.Being immersed in corrosive liquid by the epitaxial wafer of complete for photoetching isolation channel, constantly shake up and down, etching time is 1min.Adopt automatic rinser to rinse 8-10 time, then adopt drier to dry；Obtain isolation channel.
Method two: machine cuts isolation channel
Being placed on the sucker of automatic scribing machine by the epitaxial wafer of good for photoetching isolation channel, select wide saw blade to carry out scribing, saw blade speed is 10mm/s, and the scribing degree of depth is 20 μm, obtains isolation channel.
So far gallium arsenide solar cell that electrode system is Au-Ge-Ni-Au is completed by corroding isolation channel and two kinds of methods of machine cuts isolation channel obtain the process at passivation edges.
It is simple that the present embodiment has described technique, it is easy to operation, safety and stability, is effectively improved the good effect such as solderability and firmness of electrode.
Claims (3)
1. gallium arsenide solar cell passivation edge a method, it is characterized in that: gallium arsenide solar cell obtain carry passivation edge comprise the following steps that:
(1) electrode pattern in photoetching
Automatic glue spreaders is adopted to carry out bright finish resist coating at epitaxial wafer, then adopt litho machine that coated face is exposed, time of exposure is 8s-10s, the epitaxial wafer that photoetching is good is put into development 60s-90s in developer solution again, rinse 6-8 time with cleaning machine after development completely, finally dry with drier or nitrogen dries up；
(2) electrode on evaporation
Namely epitaxial wafer photoetching faced down loads in coater towards evaporation source, and evaporation order and each layer metal thickness are Au, 50nm；Ge、100nm；Ni、2μm；Au、50nm；Evacuation runs program；Then being put into by the epitaxial wafer being deposited with electrode in acetone and soak, adopt automatic degumming machine to remove photoresist after taking-up, photoresist is removed after totally, adopts automatic rinser to rinse 6-8 time, then dries with drier, completes to remove the process of photoresist；
(3) alignment isolation channel
Automatic glue spreaders is adopted to carry out bright finish resist coating at epitaxial wafer, automatic glue spreaders hot plate temperature arranges and ranges for 70 DEG C-80 DEG C, then litho machine alignment sleeve marking is adopted, coated face is exposed, time of exposure is 8s-10s, the epitaxial wafer that photoetching is good is put into development 60s-90s in developer solution again, rinses 6-8 time with cleaning machine after development completely；Finally dry with drier or nitrogen dries up；
(4) passivation edge is obtained
Corrosion isolation channel: configuration corrosive liquid, immerses the epitaxial wafer of complete for photoetching isolation channel in corrosive liquid, constantly shakes up and down, and etching time is 0.5-1.5min；Adopt automatic rinser to rinse 8-10 time, then dry；
Machine cuts isolation channel: be placed on the sucker of automatic scribing machine by the epitaxial wafer of good for photoetching isolation channel, selects wide saw blade to carry out scribing, and saw blade speed is 10mm/s, and the scribing degree of depth is 20 μm；Obtain isolation channel.
So far gallium arsenide solar cell that electrode system is Au-Ge-Ni-Au is completed by corroding isolation channel or machine cuts isolation channel obtains the process at passivation edge.
2. the method at gallium arsenide solar cell according to claim 1 passivation edge, is characterized in that: configuration corrosive liquid is HNO3: HCl=1:3.
3. the method at gallium arsenide solar cell according to claim 1 passivation edge, is characterized in that: automatic glue spreaders is when epitaxial wafer enters bright finish resist coating, and automatic glue spreaders hot plate temperature is 70 DEG C-80 DEG C, toasts 0.8-1.5min.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784149A (en) * | 2016-12-28 | 2017-05-31 | 中国电子科技集团公司第十八研究所 | A kind of passivating method of III V II-VI group solar cell |
| CN110071181A (en) * | 2018-01-22 | 2019-07-30 | 福建金石能源有限公司 | A kind of pad pasting of solar battery, exposure preparation method |
| CN112531077A (en) * | 2020-12-11 | 2021-03-19 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible gallium arsenide solar cell for space |
| CN112701187A (en) * | 2020-12-28 | 2021-04-23 | 天合光能股份有限公司 | Method and equipment for passivating edges of sliced batteries |
| CN113889553A (en) * | 2021-10-29 | 2022-01-04 | 中国电子科技集团公司第十八研究所 | One-time wet-process step etching process for GaInP/GaInAs/Ge solar cell |
| CN114871186A (en) * | 2022-01-19 | 2022-08-09 | 上海晶盟硅材料有限公司 | Pretreatment method for epitaxial wafer resistance measurement |
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| CN1941427A (en) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
| CN101752302A (en) * | 2008-12-04 | 2010-06-23 | 上海空间电源研究所 | Manufacturing method of new round-angle integrated bypass diode for high-efficiency solar batteries |
| CN101969086A (en) * | 2010-07-29 | 2011-02-09 | 厦门市三安光电科技有限公司 | Preparation method of concentrating solar cell chip capable of preventing edge leakage |
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| CN1941427A (en) * | 2005-09-28 | 2007-04-04 | 中国科学院半导体研究所 | Production of high-transmissivity window layer on n/p-shaped GaAs solar battery surface |
| CN101752302A (en) * | 2008-12-04 | 2010-06-23 | 上海空间电源研究所 | Manufacturing method of new round-angle integrated bypass diode for high-efficiency solar batteries |
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Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784149A (en) * | 2016-12-28 | 2017-05-31 | 中国电子科技集团公司第十八研究所 | A kind of passivating method of III V II-VI group solar cell |
| CN110071181A (en) * | 2018-01-22 | 2019-07-30 | 福建金石能源有限公司 | A kind of pad pasting of solar battery, exposure preparation method |
| CN112531077A (en) * | 2020-12-11 | 2021-03-19 | 中国电子科技集团公司第十八研究所 | Preparation method of flexible gallium arsenide solar cell for space |
| CN112701187A (en) * | 2020-12-28 | 2021-04-23 | 天合光能股份有限公司 | Method and equipment for passivating edges of sliced batteries |
| CN112701187B (en) * | 2020-12-28 | 2022-11-22 | 天合光能股份有限公司 | Method and equipment for passivating edges of sliced batteries |
| CN113889553A (en) * | 2021-10-29 | 2022-01-04 | 中国电子科技集团公司第十八研究所 | One-time wet-process step etching process for GaInP/GaInAs/Ge solar cell |
| CN114871186A (en) * | 2022-01-19 | 2022-08-09 | 上海晶盟硅材料有限公司 | Pretreatment method for epitaxial wafer resistance measurement |
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