CN106784149A - A kind of passivating method of III V II-VI group solar cell - Google Patents
A kind of passivating method of III V II-VI group solar cell Download PDFInfo
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- CN106784149A CN106784149A CN201611234106.3A CN201611234106A CN106784149A CN 106784149 A CN106784149 A CN 106784149A CN 201611234106 A CN201611234106 A CN 201611234106A CN 106784149 A CN106784149 A CN 106784149A
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- battery
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- epitaxial wafer
- group solar
- reaction
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- 238000000034 method Methods 0.000 title claims abstract description 29
- 239000003292 glue Substances 0.000 claims abstract description 24
- 238000006243 chemical reaction Methods 0.000 claims abstract description 19
- 230000001476 alcoholic effect Effects 0.000 claims abstract description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 15
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000002904 solvent Substances 0.000 claims abstract description 13
- 238000004073 vulcanization Methods 0.000 claims abstract description 13
- 239000005864 Sulphur Substances 0.000 claims abstract description 10
- 238000004026 adhesive bonding Methods 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 6
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical group CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 6
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 5
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 4
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 4
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 150000002898 organic sulfur compounds Chemical class 0.000 claims description 4
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- HIVLDXAAFGCOFU-UHFFFAOYSA-N ammonium hydrosulfide Chemical compound [NH4+].[SH-] HIVLDXAAFGCOFU-UHFFFAOYSA-N 0.000 claims description 3
- 238000002360 preparation method Methods 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- FWMUJAIKEJWSSY-UHFFFAOYSA-N sulfur dichloride Chemical compound ClSCl FWMUJAIKEJWSSY-UHFFFAOYSA-N 0.000 claims description 3
- YUKQRDCYNOVPGJ-UHFFFAOYSA-N thioacetamide Chemical compound CC(N)=S YUKQRDCYNOVPGJ-UHFFFAOYSA-N 0.000 claims description 3
- DLFVBJFMPXGRIB-UHFFFAOYSA-N thioacetamide Natural products CC(N)=O DLFVBJFMPXGRIB-UHFFFAOYSA-N 0.000 claims description 3
- 235000011187 glycerol Nutrition 0.000 claims description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 claims description 2
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical class CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 claims description 2
- 238000000527 sonication Methods 0.000 claims description 2
- 238000002161 passivation Methods 0.000 abstract description 13
- 238000009835 boiling Methods 0.000 abstract description 5
- 239000000126 substance Substances 0.000 abstract description 4
- 238000010574 gas phase reaction Methods 0.000 abstract description 3
- 230000036632 reaction speed Effects 0.000 abstract description 3
- 150000005846 sugar alcohols Polymers 0.000 abstract description 3
- 230000009286 beneficial effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 16
- 230000008569 process Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000000280 densification Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000008092 positive effect Effects 0.000 description 2
- 230000035484 reaction time Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 235000001508 sulfur Nutrition 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention provides a kind of passivating method of III V II-VI group solar cell, and the method includes gluing, boundary-passivated and step of removing photoresist, i.e., carries out preliminary drying to epitaxial wafer, the gluing under certain rotating speed, secondary baking, repeats the above steps in the another side of epitaxial wafer, is finally divided into cell piece；Then appropriate sulphur source is added in alcoholic solution, battery is taken out after carrying out vulcanization reaction with the battery for scribbling Protection glue at a certain temperature, the alcoholic solution of battery surface residual is finally cleaned；It is immersed in organic solution of removing photoresist to surface glue and removes completely.The beneficial effects of the invention are as follows：The present invention due to using polyalcohol as solvent, with boiling point higher, dissolving sulfosalt that can be faster.Meanwhile, the chemical driving force that reaction temperature increased vulcanization reaction is improved, reaction speed is accelerated, increase the consistency of passivation layer；Compared to gas phase reaction, wet method passivation instrument and equipment is simple, it is easy to operate, with low cost.
Description
Technical field
The present invention relates to physical power source technical field, more particularly to a kind of passivating method of III-V II-VI group solar cell.
Background technology
III-V compounds of group battery with three-junction gallium arsenide as representative has that high conversion efficiency, radiation resistance be good, high temperature
The advantages of high working efficiency, be service efficiency highest solar cell in current country's aerospace engineering.Cell series resistance is smaller,
Parallel resistance is bigger, and the performance of battery is better, and the output current when reduction of parallel resistance can make battery operated diminishes, so that
The fill factor, curve factor reduction of battery, power output declines.The critically important factor for causing parallel resistance to diminish is the edge current leakage of battery,
And it is the important process in small size and concentrator solar cell production to reduce edge current leakage.
General boundary-passivated technique, is to carry out battery edge passivation using sulfide.Existing method be in normal temperature or
Under low temperature condition, in the aqueous solution or ethanol solution of sulfur-bearing, vulcanization reaction is carried out.By vulcanization, in the gallium arsenide layer of battery
Generation arsenones or vulcanization gallium, reduce the complex centre that dangling bonds cause, and reduce edge and are combined, so that the photoelectricity for improving battery turns
Change efficiency.But, because reaction is carried out at low temperature, chemical driving force is smaller, therefore more long the time required to reaction, and what is obtained is blunt
Change layer more loose, have a strong impact on application of the technology in actual production.Loose passivation layer is long placed in easily under air atmosphere
Oxide is formed with the oxygen reaction in air, makes passivation layer " rotten ".
The content of the invention
The problem to be solved in the present invention is to provide the passivating method of a kind of III-V II-VI group solar cell, is particularly suitable for quick
Reaction obtains the wet method reaction method for preparing of finer and close sulfide passivation film layer.
In order to solve the above technical problems, the technical solution adopted by the present invention is:A kind of passivation side of III-V II-VI group solar cell
Method, the method is comprised the following steps,
Glue application step, the preparation method of the cell piece of Protection glue is scribbled to the upper and lower surface of battery, is comprised the following steps,
1) preliminary drying is carried out to epitaxial wafer；
2) gluing under certain rotating speed；
3) secondary baking；
4) another side in epitaxial wafer repeats 1-3 steps, obtains the circular epitaxial wafer that two-sided effective coverage applies Protection glue；
5) it is divided into cell piece；
Boundary-passivated step, adds appropriate sulphur source in alcoholic solution, at a certain temperature with the battery for scribbling Protection glue
Vulcanization reaction is carried out, battery is taken out after certain hour；
Remove photoresist step, the alcoholic solution of cleaning battery surface residual；It is immersed in organic solution of removing photoresist to surface glue and goes completely
Remove.
Further, the preliminary drying temperature in the glue application step to epitaxial wafer is 130 DEG C -150 DEG C, and baking time is 25-
35min, the rotating speed is 500r/min-1500r/min, and the secondary baking temperature is 85 DEG C -95 DEG C, and the time is 7-15min.
Further, the solvent of the alcoholic solution be normal propyl alcohol, isopropanol, ethylene glycol, propane diols or glycerine, it is described molten
Agent is one or more.
Further, the sulphur source be inorganic sulfosalt, organic sulfur compound or elemental sulfur, the inorganic sulfosalt be vulcanized sodium,
Sulphur ammonium or sulfur dichloride, the organic sulfur compound are thiocarbamide or thioacetamide.
Further, it is described remove photoresist step also include it is ultrasonically treated, sonication treatment time is 1-5min.
Further, the organic solvent that removes photoresist is for acetone or phenol.
The present invention has the advantages and positive effects that：
1st, the present invention due to using polyalcohol as solvent, with boiling point higher, dissolving sulfosalt that can be faster.Together
When, the chemical driving force that reaction temperature increased vulcanization reaction is improved, reaction speed is accelerated, increased the densification of passivation layer
Degree；Compared to gas phase reaction, wet method passivation instrument and equipment is simple, it is easy to operate, with low cost.
2nd, it is of the invention because fast reaction at high temperature, therefore reaction time are shorter, reduce to the resistance to organic of Protection glue
The requirement of solvent.
3rd, the present invention have effectively achieved vulcanization passivation with the compound influence to battery performance of less battery edge.
Brief description of the drawings
Fig. 1 is battery cross sectional design sketch after gluing protection of the present invention
In figure：
1st, Protection glue 2, battery
Specific embodiment
Specific embodiment of the invention is elaborated below in conjunction with the accompanying drawings.
As shown in figure 1, the passivating method of a kind of III-V II-VI group solar cell, the method is comprised the following steps,
Glue application step, the preparation method of the cell piece of Protection glue is scribbled to the upper and lower surface of battery, is comprised the following steps,
1) preliminary drying is carried out to epitaxial wafer；
2) gluing under certain rotating speed；
3) secondary baking；
4) another side in epitaxial wafer repeats 1-3 steps, obtains the circular epitaxial wafer that two-sided effective coverage applies Protection glue；
5) it is divided into cell piece；
Boundary-passivated step, adds appropriate sulphur source in alcoholic solution, at a certain temperature with the battery for scribbling Protection glue
Vulcanization reaction is carried out, battery is taken out after certain hour；
Remove photoresist step, the alcoholic solution of cleaning battery surface residual；It is immersed in organic solution of removing photoresist to surface glue and goes completely
Remove.
Concrete operations are as follows,
1) the circular batteries piece that will prepare upper/lower electrode puts 130 DEG C of -150 DEG C of baking 25-35min in an oven；
2) the gluing spin coating under the rotating speed of 500r/min-1500r/min；
3) toasted 7-15 minutes at 85 DEG C -95 DEG C；
4) another side in epitaxial wafer repeats as above 1-3 steps, that is, obtain the circular electric that two-sided effective coverage applies Protection glue
Pond piece；
5) it is divided into corresponding cell piece according to Top electrode figure.
Boundary-passivated step, adds appropriate sulphur source in alcoholic solution, is stirred to sulphur source while heating and is completely dissolved；
Continue to be heated to the boiling point of alcoholic solution；To scribble Protection glue 1 battery 2 immerse in the alcoholic solution with sulphur source carry out it is quick anti-
Should, battery is taken out after having at section and turning yellow, alcoholic solution can also be able to be two or more alcoholic solvents for single kind of solvent
Mixing, different species and the solvent of ratio can produce regulating and controlling effect to the boiling point of solution, miscible for arbitrary proportion
Solvent, the ratio of every kind of component can be 1%~100%.Can be inorganic sulfosalt as the sulfide of sulphur source, such as vulcanized sodium,
Sulphur ammonium, sulfur dichloride etc., can be easily decomposes organic sulfur compound such as thiocarbamide, thioacetamide etc., or elemental sulfurs.
Remove photoresist step, the battery after vulcanization is placed in ethanol solution the alcoholic solution for cleaning remained on surface repeatedly；It is to be cleaned
It is placed in after clean in acetone soln and is cleaned by ultrasonic 3 minutes, continues to be immersed in acetone soln removing completely to surface glue
It is to accelerate stripping process, carries out that the short time is ultrasonically treated in stripping process, the time is about 1-5 minutes, it is also possible to
The process that surface is removed photoresist directly is carried out using the method for immersion.
The used organic solvent that removes photoresist has various, can be other organic solvents such as acetone or phenol
The present invention has the advantages and positive effects that：
1st, the present invention due to using polyalcohol as solvent, with boiling point higher, dissolving sulfosalt that can be faster.Together
When, the chemical driving force that reaction temperature increased vulcanization reaction is improved, reaction speed is accelerated, increased the densification of passivation layer
Degree；Compared to gas phase reaction, wet method passivation instrument and equipment is simple, it is easy to operate, with low cost；
2nd, it is of the invention because fast reaction at high temperature, therefore reaction time are shorter, reduce to the resistance to organic of Protection glue
The requirement of solvent.
3rd, the present invention have effectively achieved vulcanization passivation with the compound influence to battery performance of less battery edge.
Embodiments of the invention have been described in detail above, but the content is only presently preferred embodiments of the present invention,
It is not to be regarded as limiting practical range of the invention.All impartial changes made according to the present patent application scope and improvement etc.,
All should still belong within patent covering scope of the invention.
Claims (6)
1. the passivating method of the II-VI group solar cells of a kind of III- V, it is characterised in that：The method is comprised the following steps,
Glue application step, the preparation method of the cell piece of Protection glue is scribbled to the upper and lower surface of battery, is comprised the following steps,
1) preliminary drying is carried out to epitaxial wafer；
2) gluing under certain rotating speed；
3) secondary baking；
4) another side in epitaxial wafer repeats 1-3 steps, obtains the circular epitaxial wafer that two-sided effective coverage applies Protection glue；
5) it is divided into cell piece；
Boundary-passivated step, adds appropriate sulphur source in alcoholic solution, is carried out with the battery for scribbling Protection glue at a certain temperature
Vulcanization reaction, takes out battery after certain hour；
Remove photoresist step, the alcoholic solution of cleaning battery surface residual；It is immersed in organic solution of removing photoresist to surface glue and removes completely.
2. the passivating method of the II-VI group solar cells of a kind of III- V according to claim 1, it is characterised in that：The gluing step
Preliminary drying temperature in rapid to epitaxial wafer is 130 DEG C -150 DEG C, and baking time is 25-35min, and the rotating speed is 500r/min-
1500r/min, the secondary baking temperature is 85 DEG C -95 DEG C, and the time is 7-15min.
3. the passivating method of the II-VI group solar cells of a kind of III- V according to claim 1 and 2, it is characterised in that：The alcohol
The solvent of solution is normal propyl alcohol, isopropanol, ethylene glycol, propane diols or glycerine, and the solvent is one or more.
4. the passivating method of the II-VI group solar cells of a kind of III- V according to claim 3, it is characterised in that：The sulphur source is
Inorganic sulfosalt, organic sulfur compound or elemental sulfur, the inorganic sulfosalt are vulcanized sodium, sulphur ammonium or sulfur dichloride, the organic sulfide
Thing is thiocarbamide or thioacetamide.
5. the passivating method of the II-VI group solar cells of a kind of III- V according to claim 3, it is characterised in that：The step of removing photoresist
Rapid also to include ultrasonically treated, sonication treatment time is 1-5min.
6. the passivating method of the II-VI group solar cells of a kind of III- V according to claim 3, it is characterised in that：Described removing photoresist has
Machine solvent is acetone or phenol.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234106.3A CN106784149A (en) | 2016-12-28 | 2016-12-28 | A kind of passivating method of III V II-VI group solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611234106.3A CN106784149A (en) | 2016-12-28 | 2016-12-28 | A kind of passivating method of III V II-VI group solar cell |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106784149A true CN106784149A (en) | 2017-05-31 |
Family
ID=58924644
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611234106.3A Pending CN106784149A (en) | 2016-12-28 | 2016-12-28 | A kind of passivating method of III V II-VI group solar cell |
Country Status (1)
| Country | Link |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1241019A (en) * | 1998-07-01 | 2000-01-12 | 中国科学技术大学 | Process for using sulfur to passivate surface of semiconductor made of group IIIA-VA compounds |
| CN1649104A (en) * | 2004-12-17 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Surface inactivating method for antimonite and its device |
| CN104347754A (en) * | 2013-08-05 | 2015-02-11 | 天津恒电空间电源有限公司 | Preparation method of thin-type GaInP/GaAs/Ge solar cell |
| CN104409572A (en) * | 2014-11-24 | 2015-03-11 | 新奥光伏能源有限公司 | Manufacturing method of heterojunction solar cell |
| US9356183B1 (en) * | 2011-06-20 | 2016-05-31 | California Institute Of Technology | Optoelectronic device with enhanced efficiency and method of use |
| CN105762227A (en) * | 2014-12-19 | 2016-07-13 | 天津恒电空间电源有限公司 | Method for forming passivated edges for gallium arsenide solar cell |
-
2016
- 2016-12-28 CN CN201611234106.3A patent/CN106784149A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1241019A (en) * | 1998-07-01 | 2000-01-12 | 中国科学技术大学 | Process for using sulfur to passivate surface of semiconductor made of group IIIA-VA compounds |
| CN1649104A (en) * | 2004-12-17 | 2005-08-03 | 中国科学院上海微系统与信息技术研究所 | Surface inactivating method for antimonite and its device |
| US9356183B1 (en) * | 2011-06-20 | 2016-05-31 | California Institute Of Technology | Optoelectronic device with enhanced efficiency and method of use |
| CN104347754A (en) * | 2013-08-05 | 2015-02-11 | 天津恒电空间电源有限公司 | Preparation method of thin-type GaInP/GaAs/Ge solar cell |
| CN104409572A (en) * | 2014-11-24 | 2015-03-11 | 新奥光伏能源有限公司 | Manufacturing method of heterojunction solar cell |
| CN105762227A (en) * | 2014-12-19 | 2016-07-13 | 天津恒电空间电源有限公司 | Method for forming passivated edges for gallium arsenide solar cell |
Non-Patent Citations (1)
| Title |
|---|
| 周路 等: "《GaAs表面硫钝化工艺新研究》", 《真空科学与技术学报》 * |
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| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20170531 |
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