CN104409572A - Manufacturing method of heterojunction solar cell - Google Patents
Manufacturing method of heterojunction solar cell Download PDFInfo
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- CN104409572A CN104409572A CN201410681480.2A CN201410681480A CN104409572A CN 104409572 A CN104409572 A CN 104409572A CN 201410681480 A CN201410681480 A CN 201410681480A CN 104409572 A CN104409572 A CN 104409572A
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- solar battery
- heterojunction solar
- protective layer
- etching solution
- conductive characteristic
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 83
- 239000000463 material Substances 0.000 claims abstract description 82
- 238000005530 etching Methods 0.000 claims abstract description 58
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000243 solution Substances 0.000 claims description 64
- 230000002209 hydrophobic effect Effects 0.000 claims description 14
- 239000012670 alkaline solution Substances 0.000 claims description 13
- 239000002253 acid Substances 0.000 claims description 10
- 230000035484 reaction time Effects 0.000 claims description 9
- 238000007650 screen-printing Methods 0.000 claims description 8
- 239000012459 cleaning agent Substances 0.000 claims description 7
- 239000012188 paraffin wax Substances 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 3
- 229920002635 polyurethane Polymers 0.000 claims description 3
- 239000004814 polyurethane Substances 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 11
- 230000006378 damage Effects 0.000 abstract description 8
- 239000004020 conductor Substances 0.000 abstract description 6
- 230000000717 retained effect Effects 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 229910052710 silicon Inorganic materials 0.000 description 15
- 239000010703 silicon Substances 0.000 description 15
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 8
- 238000002161 passivation Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000003672 processing method Methods 0.000 description 3
- 208000032953 Device battery issue Diseases 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000003599 detergent Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 1
- 229910021423 nanocrystalline silicon Inorganic materials 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 229910021425 protocrystalline silicon Inorganic materials 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 1
- 229910001887 tin oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention provides a manufacturing method of a heterojunction solar cell. Protective layers are added, etching solution is used to etch conductive material on the side of the cell, the conductive material is removed, fewer accidents of battery electric leakage occur, conversion efficiency of the cell is improved, passivated material of the cell is retained, and damage of the structure of the cell is avoided. The method includes: adding the protective layers, at least covering the front edge and the back edge, to the front and back of the heterojunction solar cell; putting the conductive material side of the heterojunction solar cell into the etching solution which is not higher than the protective layers, and allowing etching of the conductive material on the side of the heterojunction solar cell. The etching solution reacts with no protective layer but the conductive material.
Description
Technical field
The present invention relates to field of batteries, particularly relate to a kind of manufacture method of heterojunction solar battery.
Background technology
Along with the constantly progress of manufacture of solar cells technology, production cost constantly reduces, and conversion efficiency improves constantly, and the application of photovoltaic generation is increasingly extensive and become the important energy source of supply of electric power.Wherein, silicon heterogenous battery, with its low cost, high efficiency feature, becomes state-of-the-art manufacture of solar cells technology.
But, adopt the solar cell of prior art in manufacture method, very likely present the effect shown in Fig. 1, the phenomenon of the positive and negative electrode short circuit of battery often can occur.Wherein, 101 in Fig. 1 represents that positive electrode, 102 represents that cell piece, 103 represents negative electrode; Wherein, described positive electrode 101 comprises deposit transparent conductive oxide (Transparent Conducting Oxide, TCO).Can find out from the circled of Fig. 1, the positive electrode of this solar cell and negative electrode short circuit.
Be generally to the processing method with the material of conductive characteristic of the solar cell side shown in Fig. 1 the material leaving conductive characteristic by the side of sand paper to this solar cell to polish.
But, the processing method of the material of this removal limit insulation conductive characteristic is mainly all inapplicable in silicon heterogenous battery, although the material of silicon heterogenous battery limit insulation conductive characteristic can be got rid of, also can remove a part of passivation layer, thus the structure of silicon heterogenous battery will be destroyed.Therefore, prior art brings larger additional injuries not only can to silicon heterogenous battery, causes lower cell performance, even may cause silicon heterogenous battery failure.
In sum, when utilizing prior art to remove the material of silicon heterogenous battery limit insulation conductive characteristic, a part of passivation layer will be removed, cause the destructurized of silicon heterogenous battery, thus silicon heterogenous battery conversion efficiency is reduced, even cause this battery failure.
Summary of the invention
Embodiments provide a kind of manufacture method of heterojunction solar battery, in order to protect by adding the surface of protective layer to heterojunction solar battery, the material of etching solution to the conductive characteristic of heterojunction solar battery side is adopted to etch again, not removing only the material of the conductive characteristic of heterojunction solar battery side, reduce the generation of battery drain phenomenon, also the passivating material of heterojunction solar battery is remained, avoid heterojunction solar battery structural damage, achieve the passivation effect at heterojunction solar battery edge, improve the efficiency of battery conversion.
The manufacture method of a kind of heterojunction solar battery that the embodiment of the present invention provides, the method comprises:
Step one, by physical gas-phase deposition, the heterojunction solar battery that conductive characteristic material is left in side must be arrived;
Step 2, described heterojunction solar battery front and back add protective layer, this protective layer at least covers the edge in described front and the edge at the described back side;
Step 3, the side described heterojunction solar battery being left conductive characteristic material are placed in etching solution; and this etching solution does not exceed described protective layer; the conductive characteristic material of described heterojunction solar battery side is etched; wherein; described etching solution is react with described conductive characteristic material, and solution nonreactive with described protective layer.
Pass through the method; the interpolation surface of protective layer to heterojunction solar battery is adopted to protect; the material of recycling etching solution to the conductive characteristic of heterojunction solar battery side etches; not removing only the material of the conductive characteristic of heterojunction solar battery side; reduce the generation of battery drain phenomenon; also the passivating material of heterojunction solar battery is remained; avoid heterojunction solar battery structural damage; achieve the passivation effect at heterojunction solar battery edge, improve the efficiency of battery conversion.
Preferably, add protective layer at the front and back of described heterojunction solar battery, this protective layer at least covers the edge in described front and the edge at the described back side, comprising:
Add protective layer at the front and back of described heterojunction solar battery, wherein, this protective layer covers whole described front and the whole described back side;
The described side described heterojunction solar battery being left conductive characteristic material is placed in etching solution, and this etching solution does not exceed described protective layer, etches, comprising the conductive characteristic material of described heterojunction solar battery side:
Described heterojunction solar battery is all placed in etching solution, the conductive characteristic material of described heterojunction solar battery side is etched.
Preferably, add the mode of protective layer to comprise: silk screen printing, spraying, cast or smear.
Preferably, when the mode of adding protective layer is silk screen printing, the thickness range of the protective layer on described heterojunction solar battery is 1 micron to 50 microns.
By smearing the protective layer of preset thickness on described heterojunction solar battery; thus not removing only the material of the conductive characteristic of solar cell side; reduce the generation of battery drain phenomenon, it also avoid protective layer blocked up, cause the problem of the reduction of efficiency during later stage cleaning protection layer.
Preferably, described protective layer is hydrophobic material.
Preferably, described hydrophobic material comprises paraffin, polyurethane.
Preferably, described etching solution is acid solution or the alkaline solution of preset concentration.
Preferably; when described etching solution is the alkaline solution of preset concentration; the side that described heterojunction solar battery leaves conductive characteristic material is placed in etching solution; and this etching solution does not exceed described protective layer; the conductive characteristic material of described heterojunction solar battery side is etched, comprising:
The side that described heterojunction solar battery leaves conductive characteristic material is placed in alkaline solution; and this etching solution does not exceed described protective layer; according to the reaction time of presetting; the conductive characteristic material of described heterojunction solar battery side is etched; wherein, the concentration of described default reaction time and described alkaline solution is inversely proportional to.
Preferably; etching solution is placed in the side described heterojunction solar battery being left conductive characteristic material; and this etching solution does not exceed described protective layer, after etching the conductive characteristic material of described heterojunction solar battery side, the method also comprises:
Protective layer on heterojunction solar battery after etching is washed.
By the method, adopt and described protective layer is washed, prevent protective layer from affecting the conversion efficiency of heterojunction solar battery.
Preferably; described cleaning agent is determine according to described protective layer; namely described cleaning agent comprises: react with described protective layer and material nonreactive with described heterojunction solar battery, or dissolves with described protective layer and material nonreactive with described heterojunction solar battery.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of heterojunction solar battery electric leakage principle;
The schematic flow sheet of the manufacture method of a kind of heterojunction solar battery that Fig. 2 provides for the embodiment of the present invention;
The schematic diagram that Fig. 3 is sidelong in etching solution for the heterojunction solar battery that the embodiment of the present invention provides;
The schematic diagram that the heterojunction solar battery that Fig. 4 provides for the embodiment of the present invention keeps flat in etching solution;
The structural representation of the N-type heterojunction solar battery that Fig. 5 provides for the embodiment of the present invention;
The structural representation of the P type heterojunction solar battery that Fig. 6 provides for the embodiment of the present invention;
The schematic flow sheet of the processing method of the electric conducting material of the heterojunction solar battery side that Fig. 7 provides for the embodiment of the present invention;
Fig. 8 be by before embodiment of the present invention process with process after the schematic diagram of test result of heterojunction solar battery.
Embodiment
In order to make the object, technical solutions and advantages of the present invention clearly, below in conjunction with accompanying drawing, the present invention is described in further detail, and obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making other embodiments all obtained under creative work prerequisite, belong to the scope of protection of the invention.
Embodiments provide a kind of manufacture method of heterojunction solar battery, in order to protect by adding the surface of protective layer to heterojunction solar battery, the material of etching solution to the conductive characteristic of heterojunction solar battery side is adopted to etch again, not removing only the material of the conductive characteristic of heterojunction solar battery side, reduce the generation of battery drain phenomenon, also the passivating material of heterojunction solar battery is remained, avoid heterojunction solar battery structural damage, achieve the passivation effect at heterojunction solar battery edge, improve the efficiency of battery conversion.
See Fig. 2, embodiments provide a kind of manufacture method of heterojunction solar battery, the method comprises:
S201, step one, by physical gas-phase deposition, the heterojunction solar battery that conductive characteristic material is left in side must be arrived;
S202, step 2, described heterojunction solar battery front and back add protective layer, this protective layer at least covers the edge in described front and the edge at the described back side;
S203, step 3, the side described heterojunction solar battery being left conductive characteristic material are placed in etching solution; and this etching solution does not exceed described protective layer; the conductive characteristic material of described heterojunction solar battery side is etched; wherein; described etching solution is react with described conductive characteristic material, and solution nonreactive with described protective layer.
Particularly; etching solution is placed in the side described heterojunction solar battery being left conductive characteristic material; and this etching solution does not exceed described protective layer, after etching the conductive characteristic material of described heterojunction solar battery side, the method also comprises:
Protective layer on heterojunction solar battery after etching is washed.
Wherein, described cleaning agent is determine according to described protective layer; namely described cleaning agent comprises and to react with described protective layer and the material that reacts of described heterojunction solar battery of getting along well, or dissolves with described protective layer and the material that reacts of described heterojunction solar battery of getting along well.
Particularly; if described protective layer has good light transmission, and compatible with the preparation technology of described heterojunction solar battery, namely do not affect the conversion of described heterojunction solar battery; just the protective layer on the heterojunction solar battery after described etching need not be washed, retain this protective layer.
Particularly; when described protective layer only covers the edge at the edge in described front and the back side; according to the mode of Fig. 3; the part described heterojunction solar battery 301 being added with described protective layer 302 is placed on the etching solution 304 li in container 303; and this etching solution 304 does not exceed described protective layer 302, the conductive characteristic material of described heterojunction solar battery side is etched.
Particularly, the described front and back at described heterojunction solar battery adds protective layer, and this protective layer at least covers the edge in described front and the edge at the described back side, comprising:
Add protective layer at the front and back of described heterojunction solar battery, wherein, this protective layer covers whole described front and the whole described back side;
The described side described heterojunction solar battery being left conductive characteristic material is placed in etching solution, and this etching solution does not exceed described protective layer, etches, comprising the conductive characteristic material of described heterojunction solar battery side:
Described heterojunction solar battery is all placed in etching solution, the conductive characteristic material of described heterojunction solar battery side is etched.
Particularly; when described protective layer only covers the edge at the edge in described front and the back side; according to the mode of Fig. 4; the front and reverse side that described heterojunction solar battery 301 are coated with described protective layer 302 are placed in etching solution 304, the conductive characteristic material of described heterojunction solar battery 301 side is etched.
Particularly, add the mode of protective layer to comprise: silk screen printing, spraying, cast or smear.
Particularly, the thickness range of the protective layer on described heterojunction solar battery is 0.1 micron to 500 microns.
The thickness of the protective layer on described heterojunction solar battery is determine according to protective layer addition manner, if adopt the mode of silk screen printing to add, the thickness range of this protective layer is 1 micron to 50 microns, and wherein, optimum thickness range is 12 ~ 25 microns.
By smearing the protective layer of preset thickness on described heterojunction solar battery; thus not removing only the material of the conductive characteristic of heterojunction solar battery side; reduce the generation of battery drain phenomenon, it also avoid protective layer blocked up, cause the reduction of efficiency during later stage cleaning protection layer.
Wherein, described protective layer is hydrophobic material, and described hydrophobic material is paraffin or polyurethane.
Particularly, described etching solution is react with described conductive characteristic material, and the solution do not reacted with described protective layer, wherein, described etching solution can be acid solution or the alkaline solution of preset concentration.
When described etching solution is alkaline solution, need the reaction time according to presetting, the conductive characteristic material of strict control described heterojunction solar battery side edge and the etch period of described alkaline solution, wherein, the described default reaction time is predetermined according to the concentration of described alkaline solution, and the concentration of described default reaction time and described alkaline solution is inversely proportional to.
When described etching solution is acid solution, because acid solution can not etch the passivation layer of described heterojunction solar battery, namely when exceeding the default reaction time, the damage of the passivation layer of heterojunction solar battery can not be caused.
Wherein, described acid solution can be the combination of hydrochloric acid, nitric acid, sulfuric acid, hydrofluoric acid, iron chloride, oxalic acid, NaOH, potassium hydroxide or this several acid solution.Along with the enhancing of the oxidizability of described acid solution, can constantly dilute this acid solution, and when described acid solution is denseer, the reaction time of presetting is shorter.
Particularly, described heterojunction solar battery is silicon heterogenous solar cell, and wherein, described silicon heterogenous solar cell comprises the silicon heterogenous solar cell of N-type shown in Fig. 5 and the P-type silicon heterojunction solar battery shown in Fig. 6.
Ag in Fig. 5 and Fig. 6 represents silver, and TCO represents transparent conductive oxide, nc-Si represents n-type silicon chip, pc-Si represents p-type silicon chip, na-Si:H, pa-Si:H and ia-Si:H represent n layer respectively, p layer and i layer; Wherein, silver-colored Ag replaces by copper Cu, and ai-Si:H replaces by adopting a-i, SiOx.
Particularly, it is transparent conductive oxide that conductive characteristic material is left in the side of described heterojunction solar battery, and wherein, described TCO comprises AZO, ITO, Fluorin doped tin-oxide FTO.
Below in conjunction with Fig. 3, Fig. 4, Fig. 7 and embodiment, concrete explanation explanation is carried out to the present invention.
S701, when processing heterojunction solar battery side, preventing the damage to this heterojunction solar battery, therefore, adopting the mode of silk screen printing to need at the back side of heterojunction solar battery the printed portions hydrophobic material of protection to dry as paraffin;
The mode of S702, employing silk screen printing is printed paraffin in the front of heterojunction solar battery and dries, require with the back side to smear processing mode identical, if namely the part of hydrophobic material is added at the back side is the edge at the back side, so the edge of front equally in front adds hydrophobic material; If the part that hydrophobic material is added at the back side is the whole back side, so hydrophobic material is added in whole front equally in front;
S703, according to the mode described in Fig. 3, heterojunction solar battery is sidelong in concentration be in the hydrochloric acid of 1% to 37% etch 5 minutes, taken out by this heterojunction solar battery and dry, wherein, hydrochloric acid can exceed the hydrophobic material of heterojunction solar battery;
When the scope of printing paraffin in S701 and S702 is full wafer heterojunction solar battery, according to the mode described in Fig. 4, be dipped in hydrochloric acid by full wafer heterojunction solar battery and process, this process only need be carried out once directly can carrying out S705;
S704, rotate this heterojunction solar battery, by each edge of this heterojunction solar battery all according to the step process in S703;
S705, the NaOH detergent solution adopting concentration to be 1%, get rid of the hydrophobic material printed in S701 and S702, and cleaned up by NaOH detergent solution.
By testing before treatment with after process the heterojunction solar battery obtained in embodiment one, test result as shown in Figure 8.According to passable the obtaining of test result, in reverse current direction, the electrical leakage of heterojunction solar battery have dropped three orders of magnitude, significantly solves the drain conditions of heterojunction solar battery; In forward current direction, provide same voltage, the conversion efficiency of the heterojunction solar battery after process is obviously improved.
In sum, the invention provides a kind of manufacture method of heterojunction solar battery, protect by adding the surface of protective layer to heterojunction solar battery, the material of etching solution to the conductive characteristic of heterojunction solar battery side is adopted to etch again, not removing only the material of the conductive characteristic of heterojunction solar battery side, reduce the generation of heterojunction solar battery leaky, also the passivating material of heterojunction solar battery is remained, avoid heterojunction solar battery structural damage, achieve the passivation effect at heterojunction solar battery edge, improve the efficiency of heterojunction solar battery conversion, after the material etch of the conductive characteristic to heterojunction solar battery side is complete, by adopting cleaning agent to be washed by protective layer, thus prevent hydrophobic material from affecting the conversion efficiency of heterojunction solar battery.
Obviously, those skilled in the art can carry out various change and modification to the present invention and not depart from the spirit and scope of the present invention.Like this, if these amendments of the present invention and modification belong within the scope of the claims in the present invention and equivalent technologies thereof, then the present invention is also intended to comprise these change and modification.
Claims (10)
1. a manufacture method for heterojunction solar battery, is characterized in that, the method comprises:
Step one, by physical gas-phase deposition, the heterojunction solar battery that conductive characteristic material is left in side must be arrived;
Step 2, described heterojunction solar battery front and back add protective layer, this protective layer at least covers the edge in described front and the edge at the described back side;
Step 3, the side described heterojunction solar battery being left conductive characteristic material are placed in etching solution; and this etching solution does not exceed described protective layer; the conductive characteristic material of described heterojunction solar battery side is etched; wherein; described etching solution is react with described conductive characteristic material, and solution nonreactive with described protective layer.
2. method according to claim 1, is characterized in that, add protective layer at the front and back of described heterojunction solar battery, this protective layer at least covers the edge in described front and the edge at the described back side, comprising:
Add protective layer at the front and back of described heterojunction solar battery, wherein, this protective layer covers whole described front and the whole described back side;
The described side described heterojunction solar battery being left conductive characteristic material is placed in etching solution, and this etching solution does not exceed described protective layer, etches, comprising the conductive characteristic material of described heterojunction solar battery side:
Described heterojunction solar battery is all placed in etching solution, the conductive characteristic material of described heterojunction solar battery side is etched.
3. method according to claim 1, is characterized in that, adds the mode of protective layer and comprises: silk screen printing, spraying, cast or smear.
4. method according to claim 3, is characterized in that, when the mode of adding protective layer is silk screen printing, the thickness range of the protective layer on described heterojunction solar battery is 1 micron to 50 microns.
5. method according to claim 1, is characterized in that, the material of described protective layer is hydrophobic material.
6. method according to claim 5, is characterized in that, described hydrophobic material comprises: paraffin, polyurethane.
7. method according to claim 1, is characterized in that, described etching solution is acid solution or the alkaline solution of preset concentration.
8. method according to claim 7; it is characterized in that; when described etching solution is the alkaline solution of preset concentration; the side that described heterojunction solar battery leaves conductive characteristic material is placed in etching solution; and this etching solution does not exceed described protective layer; the conductive characteristic material of described heterojunction solar battery side is etched, comprising:
The side that described heterojunction solar battery leaves conductive characteristic material is placed in alkaline solution; and this etching solution does not exceed described protective layer; according to the reaction time of presetting; the conductive characteristic material of described heterojunction solar battery side is etched; wherein, the concentration of described default reaction time and described alkaline solution is inversely proportional to.
9. according to the method described in claim 1 to 8; it is characterized in that; etching solution is placed in the side described heterojunction solar battery being left conductive characteristic material; and this etching solution does not exceed described protective layer; after etching the conductive characteristic material of described heterojunction solar battery side, the method also comprises:
Cleaning agent is adopted to be washed by the protective layer on the heterojunction solar battery after etching.
10. method according to claim 9; it is characterized in that; described cleaning agent is: react with described protective layer and material nonreactive with described heterojunction solar battery, or dissolves with described protective layer and material nonreactive with described heterojunction solar battery.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106784149A (en) * | 2016-12-28 | 2017-05-31 | 中国电子科技集团公司第十八研究所 | A kind of passivating method of III V II-VI group solar cell |
| CN107665935A (en) * | 2016-07-27 | 2018-02-06 | 福建金石能源有限公司 | A kind of edge isolation method of efficient heterojunction battery |
| CN110137306A (en) * | 2019-05-08 | 2019-08-16 | 苏州联诺太阳能科技有限公司 | A kind of chemical etching method of the battery with transparent conductive oxide film |
| CN110246925A (en) * | 2019-05-13 | 2019-09-17 | 中山瑞科新能源有限公司 | A kind of technique of cadmium telluride solar panel sunny side etching |
| CN112490156A (en) * | 2020-11-27 | 2021-03-12 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Processing device and processing method of heterojunction solar cell |
| CN115799350A (en) * | 2022-11-11 | 2023-03-14 | 通威太阳能(金堂)有限公司 | Solar cell and preparation method thereof |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN202473944U (en) * | 2012-02-23 | 2012-10-03 | 常州天合光能有限公司 | Silicon sheet protection structure for preventing battery piece from being over-etched |
| CN102820379A (en) * | 2012-08-28 | 2012-12-12 | 天威新能源控股有限公司 | Method for preparing solar battery by adopting paraffin wax external-frame masking method |
| WO2013012271A2 (en) * | 2011-07-21 | 2013-01-24 | 한양대학교 산학협력단 | Method for preparing light absorption layer for solar cell, solar cell including light absorption layer, and manufacturing method thereof |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| EP2662424A1 (en) * | 2012-05-10 | 2013-11-13 | Océ-Technologies B.V. | Hot melt composition and a method and system for manufacturing electronic and/or optical components using such hot melt composition |
| CN103579417A (en) * | 2013-11-08 | 2014-02-12 | 泰州德通电气有限公司 | Wet etching process with protective layer on diffusion face |
| CN103746040A (en) * | 2014-01-14 | 2014-04-23 | 南京日托光伏科技有限公司 | Low-cost back-contact cell production method suitable for mass production |
-
2014
- 2014-11-24 CN CN201410681480.2A patent/CN104409572B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2013012271A2 (en) * | 2011-07-21 | 2013-01-24 | 한양대학교 산학협력단 | Method for preparing light absorption layer for solar cell, solar cell including light absorption layer, and manufacturing method thereof |
| CN202473944U (en) * | 2012-02-23 | 2012-10-03 | 常州天合光能有限公司 | Silicon sheet protection structure for preventing battery piece from being over-etched |
| EP2662424A1 (en) * | 2012-05-10 | 2013-11-13 | Océ-Technologies B.V. | Hot melt composition and a method and system for manufacturing electronic and/or optical components using such hot melt composition |
| CN102820379A (en) * | 2012-08-28 | 2012-12-12 | 天威新能源控股有限公司 | Method for preparing solar battery by adopting paraffin wax external-frame masking method |
| CN103022264A (en) * | 2013-01-08 | 2013-04-03 | 奥特斯维能源（太仓）有限公司 | Process for simultaneously forming front surface field and rear surface field of n-shaped battery with full-back electrode |
| CN103579417A (en) * | 2013-11-08 | 2014-02-12 | 泰州德通电气有限公司 | Wet etching process with protective layer on diffusion face |
| CN103746040A (en) * | 2014-01-14 | 2014-04-23 | 南京日托光伏科技有限公司 | Low-cost back-contact cell production method suitable for mass production |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107665935A (en) * | 2016-07-27 | 2018-02-06 | 福建金石能源有限公司 | A kind of edge isolation method of efficient heterojunction battery |
| CN106784149A (en) * | 2016-12-28 | 2017-05-31 | 中国电子科技集团公司第十八研究所 | A kind of passivating method of III V II-VI group solar cell |
| CN110137306A (en) * | 2019-05-08 | 2019-08-16 | 苏州联诺太阳能科技有限公司 | A kind of chemical etching method of the battery with transparent conductive oxide film |
| CN110246925A (en) * | 2019-05-13 | 2019-09-17 | 中山瑞科新能源有限公司 | A kind of technique of cadmium telluride solar panel sunny side etching |
| CN112490156A (en) * | 2020-11-27 | 2021-03-12 | 宣城睿晖宣晟企业管理中心合伙企业(有限合伙) | Processing device and processing method of heterojunction solar cell |
| CN115799350A (en) * | 2022-11-11 | 2023-03-14 | 通威太阳能(金堂)有限公司 | Solar cell and preparation method thereof |
| WO2024098999A1 (en) * | 2022-11-11 | 2024-05-16 | 通威太阳能(金堂)有限公司 | Solar cell and preparation method therefor |
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