CN102810464B - Photoetching method - Google Patents
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- CN102810464B CN102810464B CN201110147434.0A CN201110147434A CN102810464B CN 102810464 B CN102810464 B CN 102810464B CN 201110147434 A CN201110147434 A CN 201110147434A CN 102810464 B CN102810464 B CN 102810464B
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Abstract
The embodiment of the invention discloses a photoetching method. The photoetching method comprises the following steps of: providing a semiconductor wafer, wherein the surface of the semiconductor wafer comprises a masking layer with a smooth surface; contacting the semiconductor wafer with a solution with an oxidation action so that the surface of the masking layer becomes rough; and forming a photoresist layer on the surface of the semiconductor wafer, and carrying out a photoetching process. With the photoetching method provided by the embodiment of the invention, the original smooth surface of the masking layer can become rough in such a way that a step of wet chemical cleaning is added before the photoresist layer is coated, so that the adhesive force between the subsequently coated photoresist layer and the masking layer with the surface becoming rough is greatly strengthened, and a smaller photoresist area in the photoresist layer can be tightly attached to the masking layer, and therefore, the back phenomenon of photoresist can be prevented to a great degree.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of photoetching method.
Background technology
In the manufacture process of semiconductor wafer, the fault of construction produced in manufacture process will be avoided as far as possible, traditional lithography step is all the coatings directly carrying out photoresist in wafer surface, expose afterwards, the steps such as development, but, find in actual production, the wafer adopting traditional lithography step to produce often there will be the phenomenon of scrapping because device size is defective, find after tested, in these devices scrapped, most of underproof size appears in the less device architecture of size, inventor studies discovery, occur that the reason of this situation is, in some photoetching process in production technology, find after development, there is phenomenon (hereinafter referred to as falling glue) of collapsing in the photoresist region that in photoresist layer, size is smaller, and then the product size causing subsequent technique to be produced is defective.
Summary of the invention
For solving the problems of the technologies described above, the invention provides a kind of photoetching method, solving the problems of the prior art, largely avoid the generation of the photoresist phenomenon of falling glue.
For solving the problem, embodiments provide following technical scheme:
A kind of photoetching method, comprising:
There is provided semiconductor wafer, described wafer surface comprises masking layer, described masking layer smooth surface;
Described contact wafers is made to have the solution of oxidation, to make described masking layer surface roughening;
Form photoresist layer in described wafer surface, carry out photoetching process.
Preferably, after described masking layer is roughening, the adhesion between described photoresist layer and described masking layer increases, and occurs to avoid described photoresist layer the phenomenon of falling glue.
Preferably, after described contact wafers has the solution of oxidation, the thickness of described masking layer is decreased to
Preferably, the solution making described contact wafers have oxidation is specially, and is infiltrated by described wafer and has in the solution of oxidation described, or adopt the mode of spray clean, the described solution with oxidation is injected in the surface of described masking layer.
Preferably, the solution described in oxidation comprises NH
4oH, H
2o
2and H
2o, wherein, NH
4oH, H
2o
2and H
2o is 1: 1-5: 5-15 mixing by volume.
Preferably, infiltrating described wafer in the described time had in the solution of oxidation is 5min-15min, or adopts the mode of spray clean, and the process duration described solution with oxidation being injected in described masking layer surface is 15s-45s.
Preferably, the solution described in oxidation comprises H
2o
2and H
2sO
4, wherein, H
2o
2and H
2sO
41: 5-15 mixing by volume.
Preferably, infiltrating described wafer in the described time had in the solution of oxidation is 2min-8min, or adopts the mode of spray clean, and the process duration described solution with oxidation being injected in described masking layer surface is 10s-40s.
Preferably, after making described contact wafers have the solution of oxidation, also comprise:
Adopt wafer described in deionized water rinsing, remove the residual chemicals on described wafer;
Drying process is carried out to the wafer after adopting deionized water rinsing.
Preferably, described masking layer is, the implant blocking layer formed before forming the well region of described semiconductor device, or the implant blocking layer formed before the source region forming described semiconductor device and drain region.
Compared with prior art, technique scheme has the following advantages:
The photoetching method that the embodiment of the present invention provides, by before coating photoresist layer, add the step of wet-chemical cleaning, the masking layer surface of otherwise smooth can be made roughening, thus make the photoresist layer of follow-up coating and surface roughening after masking layer between adhesion greatly strengthen, thus fastening being attached on masking layer in photoresist region enabling size in photoresist layer less, and then largely avoid the generation of the photoresist phenomenon of falling glue.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
The schematic flow sheet of Fig. 1 photoetching method disclosed in the embodiment of the present invention one;
The schematic flow sheet of Fig. 2 photoetching method disclosed in the embodiment of the present invention two;
Fig. 3 is the region of the falling glue picture of first wafer after photoetching in the embodiment of the present invention two;
Fig. 4 is the bar chart of the region quantity of falling glue of first wafer after photoetching in the embodiment of the present invention two;
Fig. 5 is the region of the falling glue picture of second wafer after photoetching in the embodiment of the present invention two;
Fig. 6 is the bar chart of the region quantity of falling glue of second wafer after photoetching in the embodiment of the present invention two.
Embodiment
Just as described in the background section, in some photoetching process, photoetching method of the prior art is adopted to carry out photoetching process, find that the phenomenon of falling glue has appearred in the photoresist region that in the photoresist layer after development, size is smaller, after inventor sums up the technical process that the phenomenon of falling glue occurs, research finds, the photoetching process that the phenomenon of falling glue occurs has certain feature, namely the wafer surface all unusual light before coating photoresist, as the photoetching process when defining well region injection zone, now wafer surface is carry out the preflood implant blocking layer playing buffer action of well region, this implant blocking layer surface is very smooth and smooth, the photoresist of coating directly contacts with this implant blocking layer, because the adhesive force between photoresist and this implant blocking layer is inadequate, easily there is down the phenomenon of glue in the photoresist region that in the photoresist layer after causing developing, size is less.
Therefore, inventor considers, if increase the adhesive force between photoresist and each masking layer, the generation of the phenomenon of falling glue can be avoided to a great extent, increasing the method for adhesive force has a lot, as increased the degree of roughness etc. of the concentration of photoresist itself and composition, change contact surface, wherein fairly simple it is possible that the surface appearance of change masking layer, make its surface become coarse, and then just can increase the adhesion between photoresist layer and masking layer.
On basis based on above-mentioned research, embodiments provide, the method comprises the following steps:
There is provided semiconductor wafer, described wafer surface comprises masking layer, described masking layer smooth surface;
Described contact wafers is made to have the solution of oxidation, to make described masking layer surface roughening;
Form photoresist layer in described wafer surface, carry out photoetching process.
The technical scheme that the embodiment of the present invention provides, by before coating photoresist layer, add the step of wet-chemical cleaning, the masking layer surface of otherwise smooth can be made roughening, thus make the photoresist layer of follow-up coating and surface roughening after masking layer between adhesion greatly strengthen, thus fastening being attached on masking layer in photoresist region enabling size in photoresist layer less, and then largely avoid the generation of the photoresist phenomenon of falling glue.
It is more than the core concept of the application, below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, obviously, described embodiment is only the present invention's part embodiment, instead of whole embodiments.Based on the embodiment in the present invention, those of ordinary skill in the art, not making the every other embodiment obtained under creative work prerequisite, belong to the scope of protection of the invention.
Set forth a lot of detail in the following description so that fully understand the present invention, but the present invention can also adopt other to be different from alternate manner described here to implement, those skilled in the art can when without prejudice to doing similar popularization when intension of the present invention, therefore the present invention is by the restriction of following public specific embodiment.
Secondly, the present invention is described in detail in conjunction with schematic diagram, when describing the embodiment of the present invention in detail; for ease of explanation; represent that the profile of device architecture can be disobeyed general ratio and be made partial enlargement, and described schematic diagram is example, it should not limit the scope of protection of the invention at this.In addition, the three-dimensional space of length, width and the degree of depth should be comprised in actual fabrication.
Embodiment one
The flow chart of the photoetching method that the embodiment of the present invention provides as shown in Figure 1, comprises the following steps:
Step S11: semiconductor wafer is provided, described wafer surface comprises masking layer, described masking layer smooth surface;
Semiconductor wafer described in the present embodiment can comprise semiconductor element, and the silicon of such as monocrystalline, polycrystalline or non crystalline structure or SiGe (SiGe), also can comprise the semiconductor structure of mixing, such as carborundum; Also can be silicon on insulator (silicon on insulator, SOI).In addition, semiconductor wafer can also comprise other material, the sandwich construction of such as epitaxial loayer or buried layer.Further, above-mentioned semiconductor wafer also comprises the multiple integrated circuits manufactured thereon, and these integrated circuits can be in any one stage in operation, and therefore, above-mentioned semiconductor wafer comprises various region.Although there is described herein several examples of the material that can form semiconductor wafer, all the spirit and scope of the present invention can be fallen into as any material of semiconductor wafer.
Step S12: make described contact wafers have the solution of oxidation, to make described masking layer surface roughening;
The mode that contact wafers described in the present embodiment has the solution of oxidation has multiple, wafer infiltrates and has in the solution of oxidation described as will be described, the solution described in employing with oxidation rinses described wafer, adopt the mode of spray clean or employing million sound cleanings etc., adoptable cleaning equipment also has multiple, as spray clean equipment, brushing and cleaning device, overflow washer, injecting cleaning device etc., preferably adopt in the present embodiment and described wafer infiltration is had in the solution of oxidation described, or adopt the mode of spray clean, the described solution with oxidation is injected in the surface of described masking layer, accordingly, adopt which kind of way of contact, just select the cleaning equipment corresponding with this way of contact.
The effect of this step makes the smooth surface of described masking layer become coarse, to increase the adhesive force on photoresist and described masking layer surface, namely described masking layer roughening after, adhesion between described photoresist layer and described masking layer increases, and occurs with the photoresist region avoiding size in described photoresist layer less the phenomenon of falling glue.
The solution with oxidation is adopted to contact described masking layer in this step, the i.e. surface of corrodible described masking layer, its surface is made to become coarse, but it should be noted that the described selection with the solution of oxidation, should by the corrosiveness of solution to masking layer, make the surface of described masking layer roughening, but also to ensure still can meet the requirement of subsequent technique to its thickness to the thickness of the described masking layer after corroding simultaneously, described masking layer and the described way of contact with the solution of oxidation, time of contact and described in there is the selection of the solution of oxidation, requirement etc. to this masking layer thickness need determine after considering the thickness of described masking layer and subsequent technique.
Step S13: form photoresist layer in described wafer surface, carry out photoetching process.
Photoetching method disclosed in the present embodiment, process due to the wet-chemical cleaning increased in step s 12 has made the surface of described masking layer become coarse, therefore at the surperficial spin coating photoresist that masking layer is coarse, after forming photoresist layer, adhesion between photoresist layer and masking layer greatly strengthen, thus fastening being attached on masking layer in photoresist region enabling size in photoresist layer less, and then largely avoid the generation of the photoresist phenomenon of falling glue.
Photoetching method in the present embodiment can be applied to because masking layer surface is too smooth and photoresist that is that cause falls in the technical process of glue, as defined photoetching process during well region injection zone, now semiconductor wafer surface often only has epitaxial loayer and is positioned at implant blocking layer epi-layer surface playing buffer action, described masking layer is the implant blocking layer formed before forming the well region of described semiconductor device, and this implant blocking layer surface is very smooth and smooth; Or the photoetching process when defining the injection zone in source region and drain region, and the situation that before photoetching, the masking layer of semiconductor wafer surface is comparatively smooth, now described masking layer is the implant blocking layer formed before the source region forming described semiconductor device and drain region.Concrete applicable cases has multiple, here will not enumerate, as long as before spin coating photoresist, when the smoother of masking layer surface, all can apply the present invention, following examples are described in detail in conjunction with concrete application situation to photoetching method disclosed in the embodiment of the present invention.
Embodiment two
The flow chart of the photoetching method that the present embodiment provides as shown in Figure 2, comprises the following steps:
Step S21: semiconductor wafer is provided, described wafer surface comprises masking layer, described masking layer smooth surface, this step and a upper embodiment similar, be not described in detail;
Step S22: make described contact wafers have the solution of oxidation, to make described masking layer surface roughening;
Generally, the masking layer in the present embodiment mostly is the implant blocking layer before carrying out ion implantation, concrete, and in order to meet the demand of ion implantation, after described contact wafers has the solution of oxidation, the thickness of described masking layer is decreased to
preferably, the thickness of described masking layer is decreased to
the too thin or too thick exception that all can cause ion implantation of masking layer, thus affect the performance of semiconductor device.
Step S23: adopt wafer described in deionized water rinsing, remove the residual chemicals on described wafer;
Can adopt in the present embodiment the various ways such as overflow cleaning, emptying cleaning, jet cleaning, heating deionized water cleaning to contact described in there is the solution of oxidation after wafer clean, to remove chemical substance residual on wafer, concrete which kind of mode that adopts can be determined according to the concrete condition of wafer.
Step S24: drying process is carried out to the wafer after adopting deionized water rinsing;
The mode of rotary drying can be adopted in the present embodiment to carry out drying process, also methanol vapor can be adopted to carry out drying, or other modes carry out drying process, the mode dried preferably is adopted in the present embodiment, but concrete which kind of mode that adopts carries out drying, should be determined by the size of wafer and the information summary such as surface characteristics and subsequent handling.
Step S25: form photoresist layer in described wafer surface, carry out photoetching process.
Concrete, the solution with oxidation described in the present embodiment comprises NH
4oH (ammoniacal liquor), H
2o
2(hydrogen peroxide) and H
2o (deionized water), wherein, NH
4oH, H
2o
2and H
2o is 1: 1-5: 5-15 mixing by volume, preferably, and NH
4oH, H
2o
2and H
2o is 1: 1-3: 7-12 mixing by volume, preferred, NH
4oH, H
2o
2and H
2o is 1: 2: 10 mixing by volume.
And, the mode described in described contact wafers with the solution of oxidation is different, the required time is also different, for example, has in the solution of oxidation if infiltrated by described wafer described, to corrode the surface of described masking layer, then infiltrating described wafer in the described time had in the solution of oxidation is 5min-15min, and preferably, required time is 8min-12min, preferred, required time is 10min.
According to the mode of spray clean, the process duration described solution with oxidation being injected in described masking layer surface is 15s-45s, preferably, the described injecting time with the solution of oxidation is 25s-35s, preferred, the described injecting time with the solution of oxidation is 30s, due in the process of spray clean, need semiconductor wafer be placed on the chassis of rotation, afterwards that described spray solution is surperficial at described masking layer, because the course of injection of solution has certain impulsive force to described masking layer, and wafer is in rotation status always, more increase the weight of this impulsive force, therefore the mode of spray clean is adopted to make the time needed for the process of the solution described in described contact wafers with oxidation just shorter.
It should be noted that, owing to making the effect described in the contact of described masking layer with the solution of oxidation be only the surface of corroding masking layer, but not remove most of thickness of masking layer, therefore, the described solution with oxidation can not be excessive to the corrosivity of described masking layer, corrosivity as hydrofluoric acid solution is just comparatively large, is not generally suitable in the embodiment of the present invention.
Below to define the photoetching process of well region injection zone, the photoetching process of the present embodiment and lithographic results are described.
Select the semiconductor wafer after two grown epitaxial layers in a collection of wafer, wherein first wafer does not carry out any process between coating photoresist, second wafer adopted the method in the present embodiment before coating photoresist, there are described in being immersed in by described wafer in the solution of oxidation about about 10 minutes, adopt the residual chemicals on deionized water rinsing second wafer afterwards, and carry out drying process, afterwards, same etching condition is adopted to carry out photoetching to two wafers, photoetching process is specially, the photoresist layer of spin coating same thickness on two wafers, and adopt same mask to expose, after a series of photoetching processes such as development, obtain the photoresist layer with well region figure, afterwards, KLA (fault detection analysis board) is adopted to detect the wafer completing photoetching process, testing result as shown in figures 3 to 6.
Wherein, Fig. 3 and Fig. 4 is the testing result of first wafer, Fig. 5 and Fig. 6 is the testing result of second wafer, Fig. 3 and Fig. 5 is the picture of wafer, stain in figure represents the device area that glue occurs, the number of stain represents the quantity in the region of falling glue, Fig. 4 and Fig. 6 is, ordinate represents the quantity in the region of falling glue.As can be seen from the figure, do not adopt the wafer of the method process in the present embodiment, the region that glue occurs is a lot, and adopt the wafer after the method process in the present embodiment, the region of falling glue then substantially reduce the number, thus the method demonstrated in the present embodiment can avoid the generation of the photoresist situation of falling glue to a great extent, improves the performance of device.
Embodiment three
With a upper embodiment unlike, the solution of oxidation that what photoetching method in the present embodiment adopted have is different, and concrete, the solution described in the present embodiment with oxidation comprises H
2o
2and H
2sO
4, wherein, H
2o
2and H
2sO
41: 5-15 mixing by volume, preferably, H
2o
2and H
2sO
41: 8-12 mixing, preferred by volume, H
2o
2and H
2sO
41: 10 mixing by volume.
Same, the mode described in different described contact wafers with the solution of oxidation is different, time needed for contact is just different, and the solution compared in an embodiment, the corrosive nature of the solution in the present embodiment is slightly strong, but be still weaker than hydrofluoric acid solution greatly, therefore, time of contact required in the present embodiment just comparatively goes up in an embodiment shorter, and have in the solution of oxidation if infiltrated by described wafer described, the required time is 2min-8min, preferably, the required time is 4min-6min, and preferred, the required time is 5min; Or adopt the mode of spray clean, the process duration described solution with oxidation being injected in described masking layer surface is 10s-40s, preferably, the required time is 20s-30s, and preferred, the required time is 25s, owing to adopting the mode of spray clean, required time of contact is natively very short, and therefore adopt the solution in the present embodiment, time of contact, difference was little.
Photoetching method disclosed in the embodiment of the present invention, by adding the process of the chemical cleaning to masking layer before photoetching, thus make masking layer surface become coarse, increase the adhesion between photoresist layer and masking layer, thus largely avoid the generation of the photoresist phenomenon of falling glue.The time of contact, the way of contact etc. of the solution and described wafer and described solution disclosed in each embodiment above with oxidation can not be used for limiting protection scope of the present invention; as long as masking layer surface can be made roughening; and do not affect subsequent technique, concrete employing which kind of solution, which kind of way of contact etc. need be selected according to the concrete condition of wafer.
In this specification, various piece adopts the mode of going forward one by one to describe, and what each some importance illustrated is the difference with other parts, between various piece identical similar portion mutually see.
To the above-mentioned explanation of the disclosed embodiments, professional and technical personnel in the field are realized or uses the present invention.To be apparent for those skilled in the art to the multiple amendment of these embodiments, General Principle as defined herein can without departing from the spirit or scope of the present invention, realize in other embodiments.Therefore, the present invention can not be restricted to embodiment illustrated herein, but will meet the widest scope consistent with principle disclosed herein and features of novelty.
Claims (5)
1. a photoetching method, is characterized in that, comprising:
There is provided semiconductor wafer, described wafer surface comprises masking layer, described masking layer smooth surface;
Described contact wafers is made to have the solution of oxidation, to make described masking layer surface roughening;
Form photoresist layer in described wafer surface, carry out photoetching process;
Wherein, the solution making described contact wafers have oxidation is specially, and is infiltrated by described wafer and has in the solution of oxidation described, or adopt the mode of spray clean, the described solution with oxidation is injected in the surface of described masking layer;
The solution of oxidation comprises NH
4oH, H
2o
2and H
2o, described NH
4oH, H
2o
2and H
2o 1:1-5:5-15 mixing by volume, infiltrating described wafer in the described time had in the solution of oxidation is 5min-15min, or adopt the mode of spray clean, the process duration described solution with oxidation being injected in described masking layer surface is 15s-45s;
Or comprise H
2o
2and H
2sO
4, described H
2o
2and H
2sO
41:5-15 mixing by volume; Infiltrating described wafer in the described time had in the solution of oxidation is 2min-8min, or adopts the mode of spray clean, and the process duration described solution with oxidation being injected in described masking layer surface is 10s-40s.
2. photoetching method according to claim 1, is characterized in that, after described masking layer is roughening, the adhesion between described photoresist layer and described masking layer increases, and occurs to avoid described photoresist layer the phenomenon of falling glue.
3. photoetching method according to claim 2, is characterized in that, after described contact wafers has the solution of oxidation, the thickness of described masking layer is decreased to
4. the photoetching method according to any one of claim 1-3, is characterized in that, after making described contact wafers have the solution of oxidation, also comprises:
Adopt wafer described in deionized water rinsing, remove the residual chemicals on described wafer;
Drying process is carried out to the wafer after adopting deionized water rinsing.
5. photoetching method according to claim 4, is characterized in that, described masking layer is, the implant blocking layer formed before forming the well region of described semiconductor device, or the implant blocking layer formed before the source region forming described semiconductor device and drain region.
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| CN106025030B (en) * | 2016-08-08 | 2018-10-23 | 泉州市三星消防设备有限公司 | It is a kind of that there is pair preparation method of the patterned substrate of classes' figure layer |
| CN109390209B (en) * | 2017-08-03 | 2021-04-13 | 无锡华润上华科技有限公司 | Semiconductor device, manufacturing method thereof and electronic device |
| CN108153110A (en) * | 2018-01-17 | 2018-06-12 | 南开大学 | A kind of method of ultraviolet light curing nano coining |
| CN110148556A (en) * | 2019-05-20 | 2019-08-20 | 上海华虹宏力半导体制造有限公司 | A method of improving photoetching in semiconductor manufacture glue and falls glue |
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| US6169038B1 (en) * | 1998-02-17 | 2001-01-02 | Sez Semiconductor-Equipment Zubehor Fur Die Halbleiterfertigung Ag | Method for rough-etching a semiconductor surface |
| CN102010135A (en) * | 2010-11-11 | 2011-04-13 | 北京自动化控制设备研究所 | Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid |
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| US20020144972A1 (en) * | 2001-04-04 | 2002-10-10 | Macronix International Co., Ltd. | Method for forming rough surface |
| FR2911430B1 (en) * | 2007-01-15 | 2009-04-17 | Soitec Silicon On Insulator | "METHOD OF MANUFACTURING A HYBRID SUBSTRATE" |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6169038B1 (en) * | 1998-02-17 | 2001-01-02 | Sez Semiconductor-Equipment Zubehor Fur Die Halbleiterfertigung Ag | Method for rough-etching a semiconductor surface |
| CN102010135A (en) * | 2010-11-11 | 2011-04-13 | 北京自动化控制设备研究所 | Method for preparing metal mask resistant to corrosion of hydrofluoric acid corrosive liquid |
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Effective date of registration: 20171206 Address after: 214028 Xinzhou Road, Wuxi national hi tech Industrial Development Zone, Jiangsu, China, No. 8 Patentee after: Wuxi Huarun Shanghua Technology Co., Ltd. Address before: 214028 Wuxi provincial high tech Industrial Development Zone, Hanjiang Road, No. 5, Jiangsu, China Co-patentee before: Wuxi Huarun Shanghua Technology Co., Ltd. Patentee before: Wuxi CSMC Semiconductor Co., Ltd. |