CN103624032B - A kind of monolithic cleaning method of wafer - Google Patents

A kind of monolithic cleaning method of wafer Download PDF

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Publication number
CN103624032B
CN103624032B CN201210303055.0A CN201210303055A CN103624032B CN 103624032 B CN103624032 B CN 103624032B CN 201210303055 A CN201210303055 A CN 201210303055A CN 103624032 B CN103624032 B CN 103624032B
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wafer
cleaning
plasma treatment
carried out
wet
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CN103624032A (en
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符雅丽
张海洋
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Semiconductor Manufacturing International Shanghai Corp
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Semiconductor Manufacturing International Shanghai Corp
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    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P80/00—Climate change mitigation technologies for sector-wide applications
    • Y02P80/30—Reducing waste in manufacturing processes; Calculations of released waste quantities

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  • Cleaning Or Drying Semiconductors (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
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Abstract

The invention discloses a kind of monolithic cleaning method of wafer, the method comprises: carry out plasma treatment with polar gas molecule to the wafer through dry ecthing, increase the polarity of wafer surface, to change the surface of wafer into hydrophily by hydrophobicity; And wet-cleaning is carried out to wafer.Owing to using the monolithic cleaning method of wafer of the present invention, wafer can be covered very well by liquid, and the polymer transition in wafer surface is short chain polymer, more easily be eliminated, make the cleaning performance considerably increased in wet cleaning processes, reduce the fluorine residue on the rear wafer of cleaning.Cleaning method of the present invention does not need in the liquid of wet-cleaning, increase the polarity that special chemical preparation just can change wafer surface.

Description

A kind of monolithic cleaning method of wafer
Technical field
The present invention relates to technical field of manufacturing semiconductors, particularly relate to a kind of monolithic cleaning method of wafer.
Background technology
The cleaning of wafer is one very important operation in semiconductor fabrication process always.Semiconductor wafer such as etches, peels off and in process for making that cutting etc. is complicated, can produce as very thin dust and the pollutant such as etching, corrosion residues going through, and these pollutants to precipitate or be splashed on wafer and to cover pad.Along with reducing of integrated circuit, the reduction of incident pad size causes the sensitiveness to pad pollutes to increase, pad pollutes may cause poor pad tensile strength and the uniform bonding strength of intersection, this all can cause quite serious impact to the quality of whole wafer, therefore, after wafer fabrication completes, cleaning is carried out in alignment, and to go out the pollutant of wafer and bond pad surface for one time be a very important processing step.Usually, the method for batch cleaning or monolithic cleaning can be adopted to clean wafer.The method of monolithic cleaning because cleaning performance is excellent, the cleaning operation time is short, and becomes the cleaning method that industry adopts usually.
But it is found that, for hydrophobic wafer, because the contact angle in wet-cleaning between wafer and liquid is comparatively large, compared with the batch cleaned repeatedly cleans usually, how a lot of the fluorine residue after the method for monolithic cleaning on wafer is.This is because contact angle larger between wafer and liquid result in liquid in cleaning process, liquid only partly cover wafers surface, thus not the surface that covers by liquid will cause fluorine residue.And this have impact on the effect of the monolithic cleaning of wafer.
Therefore, the monolithic cleaning method that a kind of wafer is provided is needed, to solve the problem.
Summary of the invention
For solving the problems of the technologies described above, according to an aspect of the present invention, provide a kind of monolithic cleaning method of wafer, it comprises: carry out plasma treatment with polar gas molecule to the wafer through dry ecthing, increase the polarity of wafer surface, to change the surface of this wafer into hydrophily by hydrophobicity; And wet-cleaning is carried out to this wafer.
Preferably, this plasma process comprises NH 3plasma treatment.
Preferably, this NH is carried out 3during plasma treatment, NH 3flow be 30-200sccm, environmental pressure is 30-60mtorr, and power is 600-1000W, and substrate bias power is 0-50W.
Preferably, this NH is carried out 3the time of plasma treatment is 10-20s.
Preferably, after a wafer has been wet cleaned, also comprise: surface polarity Recovery processing is carried out to wafer, reduce the polarity of wafer, so that the surface of wafer is transformed back into hydrophobicity by hydrophily.
Preferably, this surface polarity Recovery processing comprises N 2plasma treatment.
Preferably, this N is carried out 2during plasma treatment, N 2flow be 30-200sccm, environmental pressure is 20-60mtorr, and power is 500-1000W, and substrate bias power is 0-100W.
Preferably, this N is carried out 2the time of plasma treatment is 10-20s.
Preferably, this dry ecthing is carried out in dry etching chamber or ashing room.
Preferably, this dry ecthing comprises etching wafer based on the gas of carbon, fluorine.
The present invention has following technique effect:
In the monolithic cleaning method of wafer of the present invention, before carrying out wet-cleaning to the wafer through dry etching, first polar gas molecule carries out plasma treatment to it, increases the polarity of wafer surface, to change the surface of wafer into hydrophily by hydrophobicity.Like this, relative to the situation of hydrophobic wafer, in wet cleaning processes afterwards, because wafer surface has hydrophily, the contact angle between wafer and liquid diminishes, and wafer is covered very well by liquid.And, use the plasma treatment that polar gas molecule carries out wafer, the long-chain polymer with low polarity such as containing carbon and fluorine in wafer surface can be converted into the short chain polymer with high polarity, in wet-cleaning, short chain polymer is more easily by alveolar fluid clearance.
To sum up, owing to using the monolithic cleaning method of wafer of the present invention, wafer can be covered very well by liquid, and the polymer transition in wafer surface is short chain polymer, more easily be eliminated, make the cleaning performance considerably increased in wet cleaning processes, reduce the fluorine residue on the rear wafer of cleaning.
In addition, use the monolithic cleaning method of wafer of the present invention, before wet-cleaning, with polar gas molecule, plasma treatment is carried out to wafer, make not need in the liquid of wet-cleaning, increase the polarity that special chemical preparation just can change wafer surface.
In summary of the invention part, introduce the concept of a series of reduced form, this will further describe in detailed description of the invention part.Summary of the invention part of the present invention does not also mean that the key feature and essential features that will attempt to limit technical scheme required for protection, does not more mean that the protection domain attempting to determine technical scheme required for protection.
Below in conjunction with accompanying drawing, describe advantages and features of the invention in detail.
Accompanying drawing explanation
Following accompanying drawing of the present invention in this as a part of the present invention for understanding the present invention.Shown in the drawings of embodiments of the present invention and description thereof, be used for explaining principle of the present invention.In the accompanying drawings,
Fig. 1 shows the schematic flow sheet of the monolithic cleaning method of the wafer according to the first embodiment of the present invention;
Fig. 2 shows the schematic flow sheet of the monolithic cleaning method of wafer according to a second embodiment of the present invention;
Fig. 3 shows the schematic flow sheet of the monolithic cleaning method of wafer according to the third embodiment of the invention;
Fig. 4 shows the schematic diagram of wafer surface change in each step of the monolithic cleaning method of wafer according to the third embodiment of the invention.
Detailed description of the invention
In the following description, a large amount of concrete details is given to provide more thorough understanding of the invention.But, it will be apparent to one skilled in the art that the present invention can be implemented without the need to these details one or more.In other example, in order to avoid obscuring with the present invention, technical characteristics more well known in the art are not described.
In order to thoroughly understand the present invention, by following description, detailed structure is proposed.Obviously, execution of the present invention is not limited to the specific details that those skilled in the art has the knack of.Preferred embodiment of the present invention is described in detail as follows, but except these are described in detail, the present invention can also have other embodiments.
As shown in Figure 1, the monolithic cleaning method that polar gas molecule according to the present invention carries out the wafer of plasma treatment first embodiment to the wafer through dry ecthing comprises the following steps:
Step S101: plasma treatment is carried out to the wafer through dry ecthing with polar gas molecule;
Step S102: wet-cleaning is carried out to wafer.
Wherein in step S101, by using this polar gas molecule to carry out plasma treatment, the polarity of wafer surface is increased, to change the surface of wafer into hydrophily by hydrophobicity.Be appreciated that in the wet cleaning processes of step S102, because wafer surface obtains hydrophily from step S101, the contact angle between wafer and liquid diminishes, thus liquid can cover wafers be surperficial very well; And, use the plasma treatment that polar gas molecule carries out wafer, the long-chain polymer with low polarity such as containing carbon and fluorine in wafer surface can be converted into the short chain polymer with high polarity, and in the wet-cleaning of step S102, short chain polymer is more easily by alveolar fluid clearance.
Can understand from above, in the present embodiment, due in step S101, wafer can be covered very well by liquid, and the polymer transition in wafer surface is short chain polymer, more easily be eliminated, make the cleaning performance of the wet-cleaning considerably increasing step S102, reduce the fluorine residue on the rear wafer of cleaning.
In addition, in the cleaning method of the present embodiment, in step S101, with polar gas molecule, plasma treatment is carried out to wafer, make not need in the liquid in the wet-cleaning of step S102, to increase the polarity that special chemical preparation just can change wafer surface.
This polar gas molecule in step S101 can be such as NH 3, HB rdeng.Preferably, in the present embodiment, the plasma treatment of step S101 can comprise NH 3(ammonia) plasma treatment.NH 3molecule is polar molecule, easily carries out plasma treatment, advantage of lower cost and easily obtaining.In addition, due to before washing, wafer have passed through dry etch process, and the key on surface exists bond fission phenomenon, and the low-K material layer on wafer there will be damage, and uses NH 3carry out plasma treatment, the effect of sealing of hole can be played the micropore on low-K material layer, thus repair the damage of low-K material layer, improve the quality of wafer.
Preferably, NH is being carried out 3during plasma treatment, NH 3flow be 30-200sccm, environmental pressure is 30-60mtorr, and power is 600-1000W, and substrate bias power is 0-50W.Carry out step S101 with this understanding, the polarity of wafer surface increase and polymer in wafer surface best to the transition effect of short chain polymer, thus cleaning performance is best.
More preferably, NH is carried out under these conditions 3the time of plasma treatment is 10-20s.
As shown in Figure 2, according to a second embodiment of the present invention, step S201 and step S202 are identical with the step S102 in the first embodiment with the step S101 in the first embodiment respectively, do not repeat them here.Unlike, in the present embodiment, after step S202, also carry out step S203: surface polarity Recovery processing is carried out to wafer, reduce the polarity of wafer, so that the surface of wafer is transformed back into hydrophobicity by hydrophily.
Because in step s 201, the surface of wafer changes hydrophily into by hydrophobicity, the water imbibition of low-K material layer is increased, and this increases causing the K value of low-K material layer, and then its RC is caused to postpone, so after the wet-cleaning of step S202, proceed step S203, the surface of wafer is transformed back into hydrophily by hydrophobicity, then can prevent the water suction of low-K material layer, avoid its K value to increase and RC delay.
Preferably, the surface polarity Recovery processing carried out wafer in step S203 is by carrying out N to wafer surface 2plasma treatment, thus form a hydrophobicity diaphragm in wafer surface.It forms fish tail and waterproof layer in wafer surface, thus not only prevents low-K material layer from absorbing water, and prevents the oxidation on the copper surface on wafer.In addition, this diaphragm be arranged on copper surface can be removed, so this diaphragm can not impact the 26S Proteasome Structure and Function of wafer by using the sputtering technology of argon gas in crystal seed layer forming process in semiconductor technology afterwards.
When carrying out N 2during plasma treatment, preferably, N 2flow be 30-200sccm, environmental pressure is 20-60mtorr, and power is 500-1000W, and substrate bias power is 0-100W.Carry out step S203 with this understanding, the diaphragm of formation is best in quality.
More preferably, N is carried out under these conditions 2the time of plasma treatment is 10-20s.
In addition, the monolithic cleaning method of wafer mentioned of the present invention is for the wafer through dry ecthing.Preferably, this dry ecthing is carried out in dry etching chamber or ashing room.And preferably, this dry ecthing comprises etching wafer based on the gas of carbon, fluorine.
As shown in Figure 3, preferably, the monolithic cleaning method of wafer according to the third embodiment of the invention comprises the following steps:
Step S301: NH is carried out to the wafer through dry ecthing 3plasma treatment.
Step S302: wet-cleaning is carried out to wafer.
Step S303: N is carried out to wafer 2plasma treatment.
In addition, before the step S300 (carrying out dry ecthing to wafer with the gas based on carbon and fluorine) before step S301 means cleaning method of the present invention, the dry etching process of wafer experience, is not included in cleaning method of the present invention.
As shown in Figure 4, wafer 4 surface is after experience above-mentioned steps S300, and the surface deposition long-chain polymer be made up of carbon and fluorine, now the group on wafer 4 surface is low polarity, wafer 4 has hydrophobic surface 41.Afterwards, wafer 4 is after experience above-mentioned steps S301, and the polymer transition on surface is the short chain polymer group of high polarity, not only diminishes with the contact angle of liquid and has hydrophilic surface 42, short chain polymer on this hydrophilic surface 42 is also easily removed, the cleaning of step S302 after convenient.After the wet-cleaning of step S302, the surface of wafer 4 is still hydrophilic, and contact angle is less.Experience above-mentioned steps S303 again, by carrying out N to wafer 4 2plasma treatment, forms the very thin nitrogenous hydrophobicity diaphragm 43 of one deck on wafer 4 surface, to prevent the water suction of low-K material layer, avoids its K value to increase and RC delay, prevents the oxidation on the copper surface on wafer 4 simultaneously.
In the present embodiment, NH in step S301 3flow be 30-200sccm, environmental pressure is 30-60mtorr, and power is 600-1000W, and substrate bias power is 0-50W, and the processing time is 10-20s; N in step S303 2flow be 30-200sccm, environmental pressure is 20-60mtorr, and power is 500-1000W, and substrate bias power is 0-100W, and the time of process is 10-20s.
The present invention is illustrated by above-described embodiment, but should be understood that, above-described embodiment just for the object of illustrating and illustrate, and is not intended to the present invention to be limited in described scope of embodiments.In addition it will be appreciated by persons skilled in the art that the present invention is not limited to above-described embodiment, more kinds of variants and modifications can also be made according to instruction of the present invention, within these variants and modifications all drop on the present invention's scope required for protection.Protection scope of the present invention defined by the appended claims and equivalent scope thereof.

Claims (9)

1. a monolithic cleaning method for wafer, is characterized in that, comprising:
With polar gas molecule, plasma treatment is carried out to the wafer through dry ecthing, increase the polarity of described wafer surface, to change the surface of described wafer into hydrophily by hydrophobicity; And
Wet-cleaning is carried out to described wafer;
After wet-cleaning is carried out to described wafer, also comprise: surface polarity Recovery processing is carried out to described wafer, reduce the polarity of described wafer, so that the surface of described wafer is transformed back into hydrophobicity by hydrophily.
2. method according to claim 1, is characterized in that, described plasma treatment comprises NH 3plasma treatment.
3. method according to claim 2, is characterized in that, carries out described NH 3during plasma treatment, described NH 3flow be 30-200sccm, environmental pressure is 30-60mtorr, and power is 600-1000W, and substrate bias power is 0-50W.
4. method according to claim 3, is characterized in that, carries out described NH 3the time of plasma treatment is 10-20s.
5. method according to claim 1, is characterized in that, described surface polarity Recovery processing comprises N 2plasma treatment.
6. method according to claim 5, is characterized in that, carries out described N 2during plasma treatment, described N 2flow be 30-200sccm, environmental pressure is 20-60mtorr, and power is 500-1000W, and substrate bias power is 0-100W.
7. method according to claim 6, is characterized in that, carries out described N 2the time of plasma treatment is 10-20s.
8. method according to claim 1, is characterized in that, described dry ecthing is carried out in dry etching chamber or ashing room.
9. method according to claim 8, is characterized in that, described dry ecthing comprises etching wafer based on the gas of carbon, fluorine.
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CN104835721B (en) * 2015-03-31 2017-10-17 上海华力微电子有限公司 Improve the method for adhesion of the ArF photoresistances on silicon chip surface
CN108010835B (en) * 2016-10-28 2020-08-07 中芯国际集成电路制造(上海)有限公司 Semiconductor device, manufacturing method thereof and electronic device

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JPH02116130A (en) * 1988-10-26 1990-04-27 Matsushita Electron Corp Method of cleaning substrate
WO2002001483A2 (en) * 2000-06-26 2002-01-03 Epic Systems Corporation Patient health record access system
CN1502122A (en) * 2000-06-23 2004-06-02 ����Τ�����ʹ�˾ Method to restore hydrophobicity in dielectric films and materials
WO2008091667A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Configurable bevel etcher
CN101814578A (en) * 2009-02-20 2010-08-25 台湾积体电路制造股份有限公司 A semiconductor element and a fabricating method thereof

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Publication number Priority date Publication date Assignee Title
CN87105937A (en) * 1987-12-12 1988-06-01 南京工学院 The surface treatment method of directly bonding semiconductor
JPH02116130A (en) * 1988-10-26 1990-04-27 Matsushita Electron Corp Method of cleaning substrate
CN1502122A (en) * 2000-06-23 2004-06-02 ����Τ�����ʹ�˾ Method to restore hydrophobicity in dielectric films and materials
WO2002001483A2 (en) * 2000-06-26 2002-01-03 Epic Systems Corporation Patient health record access system
WO2008091667A1 (en) * 2007-01-26 2008-07-31 Lam Research Corporation Configurable bevel etcher
CN101814578A (en) * 2009-02-20 2010-08-25 台湾积体电路制造股份有限公司 A semiconductor element and a fabricating method thereof

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