CN104252103A - Removal method of residual photoresist after photoetching reworking - Google Patents
Removal method of residual photoresist after photoetching reworking Download PDFInfo
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- CN104252103A CN104252103A CN201310258513.8A CN201310258513A CN104252103A CN 104252103 A CN104252103 A CN 104252103A CN 201310258513 A CN201310258513 A CN 201310258513A CN 104252103 A CN104252103 A CN 104252103A
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Abstract
The invention discloses a removal method of a residual photoresist after photoetching reworking. The method comprises the following steps of soaking a wafer with the residual photoresist with a hydrofluoric acid solution, cleaning the wafer with the residual photoresist with an SPM (Sulfuric Peroxide Mixture) solution, and cleaning the wafer with the residual photoresist with an APM (Ammonia Peroxide Mixture). The method can remove the residual photoresist (generally carburized) on the wafer after the reworking, so that the production cost can be lowered, a utilization ratio of a raw material for production can be increased, and waste is avoided.
Description
Technical field
The present invention relates to the manufacture method of semiconductor devices, particularly relate to the minimizing technology remaining photoresist after a kind of photoetching is done over again.
Background technology
In semiconductor fabrication, photoetching often can run into the exception caused due to various reason and does over again.Wherein, if the exception (such as gluing bad, dual rubber coating etc.) occurred in gluing chamber, deal with just pretty troublesome, need first inside to remove photoresist after (EBR removes photoresist) and do over again again, otherwise just have do over again after to remove photoresist sordid risk.
If really there occurs photoresist after doing over again not go clean situation, then now residual photoresist cannot be removed usually by again doing over again, and therefore wafer will be scrapped.
Summary of the invention
Based on this, the minimizing technology of residual photoresist after being necessary to provide a kind of photoetching to do over again.
A minimizing technology for photoetching residual photoresist after doing over again, comprises the following steps: to use hydrofluoric acid solution to soak the wafer remaining photoresist; The first solution is used to clean the described wafer remaining photoresist; The second solution is used to clean the described wafer remaining photoresist; The mixed solution that the mixed solution that described first solution is sulfuric acid and hydrogen peroxide, described second solution are ammoniacal liquor and hydrogen peroxide, or described second solution be the mixed solution of sulfuric acid and hydrogen peroxide, described first solution is the mixed solution of ammoniacal liquor and hydrogen peroxide.
Wherein in an embodiment, H in described hydrofluoric acid solution
2the mol ratio of O and HF is 100:1.
Wherein in an embodiment, it is 30 seconds that described use hydrofluoric acid solution immersion remains soak time in the step of the wafer of photoresist.
Wherein in an embodiment, H in the mixed solution of described sulfuric acid and hydrogen peroxide
2sO
4and H
2o
2mol ratio be 5:1.
Wherein in an embodiment, NH in the mixed solution of described ammoniacal liquor and hydrogen peroxide
4oH, H
2o
2, H
2the mol ratio of O is 1:2:10.
Wherein in an embodiment, the step that described use first solution cleans the described wafer remaining photoresist and use the second solution to clean the described wafer remaining photoresist step in scavenging period be 10 minutes.
Wherein in an embodiment, the step that described use first solution cleans the described wafer remaining photoresist and use the second solution to clean the described wafer remaining photoresist step in be carry out Ultrasonic Cleaning.
Wherein in an embodiment, using the first solution to clean the described wafer remaining photoresist and use the second solution to carry out cleaning to the described wafer remaining photoresist is carry out twice.
Wherein in an embodiment, described photoresist is the photoresist remaining in polysilicon layer surface.
The minimizing technology of above-mentioned photoetching residual photoresist after doing over again, can remove the photoresist (usually carbonization occurring) still remained in after doing over again on wafer, therefore, it is possible to reduce production cost, improve raw materials for production utilization factor, avoids causing waste.
Accompanying drawing explanation
Fig. 1 is the process flow diagram of photoetching minimizing technology of residual photoresist after doing over again in an embodiment.
Embodiment
For enabling object of the present invention, feature and advantage more become apparent, and are described in detail the specific embodiment of the present invention below in conjunction with accompanying drawing.
Fig. 1 is the process flow diagram of photoetching minimizing technology of residual photoresist after doing over again in an embodiment, comprises the following steps:
S110, uses hydrofluoric acid solution (DHF) to soak the wafer remaining photoresist.
First the wafer having photoresist to remain after photoetching being done over again is immersed in the DHF of dilution.In the present embodiment, be adopt H
2the mol ratio of O and HF is the DHF solution of 100:1, and the time of immersion is 30 seconds.In other embodiments, those skilled in the art can carry out suitable adjustment to solution concentration and soak time.
S120, uses the mixed solution (SPM) of sulfuric acid and hydrogen peroxide to clean the wafer remaining photoresist.
After immersion in DHF completes, SPM is used to clean the wafer remaining photoresist.In the present embodiment, be adopt H
2sO
4and H
2o
2mol ratio be the SPM solution of 5:1, the time of cleaning is 10 minutes.In order to obtain better cleaning performance, the mode of Ultrasonic Cleaning can be adopted, namely using supersonic wave cleaning machine (clean-out system is above-mentioned SPM solution) to clean this wafer.In other embodiments, those skilled in the art can carry out suitable adjustment to solution concentration and scavenging period.
S130, uses the mixed solution (APM) of the mixed solution of ammoniacal liquor and hydrogen peroxide to clean the wafer remaining photoresist.
In embodiment, be adopt NH
4oH, H
2o
2, H
2the mol ratio of O is the APM solution of 1:2:10, and the time of cleaning is 10 minutes.In order to obtain better cleaning performance, the mode of Ultrasonic Cleaning can be adopted, namely using supersonic wave cleaning machine (clean-out system is above-mentioned APM solution) to clean this wafer.In other embodiments, those skilled in the art can carry out suitable adjustment to solution concentration and scavenging period.
Understandable, above-mentioned steps S120 and S130 can exchange, and the cleaning of SPM is carried out in the cleaning namely first carrying out APM again.
Find in actual production, the cleaning step repeatedly effect of twice is better, after namely finishing the Ultrasonic Cleaning of a SPM+APM, then repeats a step S120 and step S130.
The minimizing technology of above-mentioned photoetching residual photoresist after doing over again, the photoresist (usually carbonization occurring) still remained in after doing over again on wafer can be removed, this residual photoresist is difficult to removal because of with common reworking method, so yield reduction or needs can be caused directly to scrap wafer.After adopting above-mentioned photoetching to do over again, the minimizing technology of residual photoresist can reduce production cost, improve raw materials for production utilization factor after removing photoresist, and avoids causing waste.
Following table shows two groups do over again after photoresist on the polysilicon layer minimizing technology of not removing clean wafer residual photoresist after using above-mentioned photoetching to do over again to remove photoresist the variation in thickness of front and back polysilicon layer, this polysilicon layer adulterates.Can see that the speed that polysilicon is etched is about
Through inventor's experimental study, the loss of polysilicon mainly APM causes.Can see from following table, after adopting above-mentioned photoetching to do over again, the loss of the minimizing technology polysilicon of residual photoresist is very little, in safe range.
More than the confirmatory experiment that after using photoetching to do over again, the minimizing technology of residual photoresist carries out polysilicon layer, also can with reference to use when other level removes photoresist.
The above embodiment only have expressed several embodiment of the present invention, and it describes comparatively concrete and detailed, but therefore can not be interpreted as the restriction to the scope of the claims of the present invention.It should be pointed out that for the person of ordinary skill of the art, without departing from the inventive concept of the premise, can also make some distortion and improvement, these all belong to protection scope of the present invention.Therefore, the protection domain of patent of the present invention should be as the criterion with claims.
Claims (9)
1. a minimizing technology for photoetching residual photoresist after doing over again, comprises the following steps:
Hydrofluoric acid solution is used to soak the wafer remaining photoresist;
The first solution is used to clean the described wafer remaining photoresist;
The second solution is used to clean the described wafer remaining photoresist;
The mixed solution that the mixed solution that described first solution is sulfuric acid and hydrogen peroxide, described second solution are ammoniacal liquor and hydrogen peroxide, or described second solution be the mixed solution of sulfuric acid and hydrogen peroxide, described first solution is the mixed solution of ammoniacal liquor and hydrogen peroxide.
2. the minimizing technology of photoetching according to claim 1 residual photoresist after doing over again, is characterized in that, H in described hydrofluoric acid solution
2the mol ratio of O and HF is 100:1.
3. the minimizing technology of photoetching according to claim 2 residual photoresist after doing over again, is characterized in that, it is 30 seconds that described use hydrofluoric acid solution immersion remains soak time in the step of the wafer of photoresist.
4. the minimizing technology of photoetching according to claim 1 residual photoresist after doing over again, is characterized in that, H in the mixed solution of described sulfuric acid and hydrogen peroxide
2sO
4and H
2o
2mol ratio be 5:1.
5. the minimizing technology of the residual photoresist after doing over again of the photoetching according to claim 1 or 4, is characterized in that, NH in the mixed solution of described ammoniacal liquor and hydrogen peroxide
4oH, H
2o
2, H
2the mol ratio of O is 1:2:10.
6. the minimizing technology of photoetching according to claim 5 residual photoresist after doing over again, it is characterized in that, the step that described use first solution cleans the described wafer remaining photoresist and use the second solution to clean the described wafer remaining photoresist step in scavenging period be 10 minutes.
7. the minimizing technology of photoetching according to claim 1 residual photoresist after doing over again, it is characterized in that, the step that described use first solution cleans the described wafer remaining photoresist and use the second solution to clean the described wafer remaining photoresist step in be carry out Ultrasonic Cleaning.
8. the minimizing technology of photoetching according to claim 1 residual photoresist after doing over again, it is characterized in that, using the first solution to clean the described wafer remaining photoresist and use the second solution to carry out cleaning to the described wafer remaining photoresist is carry out twice.
9. the minimizing technology of photoetching according to claim 1 residual photoresist after doing over again, it is characterized in that, described photoresist is the photoresist remaining in polysilicon layer surface.
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| CN201310258513.8A CN104252103A (en) | 2013-06-25 | 2013-06-25 | Removal method of residual photoresist after photoetching reworking |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280480A (en) * | 2015-09-24 | 2016-01-27 | 武汉新芯集成电路制造有限公司 | Surface treatment method in photoetching reworking process |
| CN107870510A (en) * | 2016-09-27 | 2018-04-03 | 上海凸版光掩模有限公司 | The cleaning method of photomask board and remove gluing method |
| CN111199869A (en) * | 2018-11-19 | 2020-05-26 | 长鑫存储技术有限公司 | Wafer cleaning method |
| WO2022205776A1 (en) * | 2021-03-30 | 2022-10-06 | 腾讯科技（深圳）有限公司 | Photoresist removal method and photoresist removal system |
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| US20030003754A1 (en) * | 2001-06-29 | 2003-01-02 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device and semiconductor device |
| CN1842896A (en) * | 2003-08-25 | 2006-10-04 | 松下电器产业株式会社 | Method for forming impurity-introduced layer, method for cleaning object to be processed, apparatus for introducing impurity and method for producing device |
| CN101355029A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Method for forming grids of semiconductor device |
| CN102142372A (en) * | 2010-12-24 | 2011-08-03 | 江苏宏微科技有限公司 | Preparation method of field blocking type bipolar transistor of insulated gate |
| CN102437064A (en) * | 2011-11-30 | 2012-05-02 | 上海华力微电子有限公司 | Manufacturing method of silicon Nano-wire (SiNW) |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030003754A1 (en) * | 2001-06-29 | 2003-01-02 | Mitsubishi Denki Kabushiki Kaisha | Method of fabricating semiconductor device and semiconductor device |
| CN1842896A (en) * | 2003-08-25 | 2006-10-04 | 松下电器产业株式会社 | Method for forming impurity-introduced layer, method for cleaning object to be processed, apparatus for introducing impurity and method for producing device |
| CN101355029A (en) * | 2007-07-27 | 2009-01-28 | 中芯国际集成电路制造(上海)有限公司 | Method for forming grids of semiconductor device |
| CN102142372A (en) * | 2010-12-24 | 2011-08-03 | 江苏宏微科技有限公司 | Preparation method of field blocking type bipolar transistor of insulated gate |
| CN102437064A (en) * | 2011-11-30 | 2012-05-02 | 上海华力微电子有限公司 | Manufacturing method of silicon Nano-wire (SiNW) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105280480A (en) * | 2015-09-24 | 2016-01-27 | 武汉新芯集成电路制造有限公司 | Surface treatment method in photoetching reworking process |
| CN107870510A (en) * | 2016-09-27 | 2018-04-03 | 上海凸版光掩模有限公司 | The cleaning method of photomask board and remove gluing method |
| CN111199869A (en) * | 2018-11-19 | 2020-05-26 | 长鑫存储技术有限公司 | Wafer cleaning method |
| WO2022205776A1 (en) * | 2021-03-30 | 2022-10-06 | 腾讯科技（深圳）有限公司 | Photoresist removal method and photoresist removal system |
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