CN111199869A - Wafer cleaning method - Google Patents
Wafer cleaning method Download PDFInfo
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- CN111199869A CN111199869A CN201811378917.XA CN201811378917A CN111199869A CN 111199869 A CN111199869 A CN 111199869A CN 201811378917 A CN201811378917 A CN 201811378917A CN 111199869 A CN111199869 A CN 111199869A
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- 238000004140 cleaning Methods 0.000 title claims abstract description 194
- 238000000034 method Methods 0.000 title claims abstract description 74
- 238000005406 washing Methods 0.000 claims abstract description 54
- 239000000126 substance Substances 0.000 claims abstract description 29
- 239000007788 liquid Substances 0.000 claims abstract description 24
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 36
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 16
- 239000000243 solution Substances 0.000 claims description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 15
- 238000001035 drying Methods 0.000 claims description 14
- 239000011259 mixed solution Substances 0.000 claims description 13
- 239000000356 contaminant Substances 0.000 claims description 9
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 7
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000007864 aqueous solution Substances 0.000 claims description 2
- 238000009776 industrial production Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 114
- 230000007547 defect Effects 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000008367 deionised water Substances 0.000 description 7
- 229910021641 deionized water Inorganic materials 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 239000003344 environmental pollutant Substances 0.000 description 4
- 231100000719 pollutant Toxicity 0.000 description 4
- 238000011010 flushing procedure Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002791 soaking Methods 0.000 description 2
- 229910004014 SiF4 Inorganic materials 0.000 description 1
- 229910020489 SiO3 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000010306 acid treatment Methods 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
Abstract
A method for cleaning a wafer comprises the following cleaning steps: clamping a wafer to be cleaned on a support frame, and placing the wafer in a chemical cleaning tank containing first cleaning liquid to perform first cleaning treatment; placing the wafer subjected to the first cleaning treatment in a rinsing tank for primary rinsing; placing the wafer subjected to the primary washing in a chemical washing tank containing a second washing liquid for second washing treatment; placing the wafer subjected to the second cleaning treatment in a rinsing tank for secondary rinsing; placing the wafer subjected to the secondary washing in a chemical washing tank containing a third washing liquid for third washing treatment; placing the wafer subjected to the third cleaning treatment in a washing tank for washing for three times; wherein an oxide layer is generated on the surface of the wafer after the second cleaning treatment. The method solves the problem that the surface of the wafer is rough and uneven after the traditional cleaning, can also solve the problem that a cleaning blind area appears in the cleaning process by converting the cleaning angle of the wafer and repeating the cleaning steps, and is suitable for large-scale industrial production.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a method for cleaning a wafer.
Background
During the development of Dynamic Random Access Memory (DRAM) technology, wet clean (wet clean) is an essential process to remove the contamination on the wafer surface by soaking or rinsing with chemicals, wherein silicon nitride (SiN) is one of the most common contaminants. However, when removing silicon nitride, problems are often encountered, such as: after the wafer is cleaned, an unwashed blind area may occur, or the chemical cleaning solution reacts with the silicon wafer itself to cause roughness (roughness) of the wafer surface.
Therefore, a new wafer cleaning method is needed to solve the above problems in the prior art.
It is noted that the information disclosed in the foregoing background section is only for enhancement of background understanding of the invention and therefore it may contain information that does not constitute prior art that is already known to a person of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a wafer cleaning method, which solves the problems that a cleaning blind area is easy to occur in the traditional wafer wet cleaning process and the surface of a cleaned wafer is rough and uneven.
In order to achieve the purpose, the invention adopts the following technical scheme:
the invention provides a cleaning method of a wafer, wherein the wafer is cleaned by a wafer cleaning machine, the wafer cleaning machine comprises a chemical cleaning tank and a flushing tank, a support frame is arranged in the chemical cleaning tank, and the cleaning method comprises the following cleaning steps:
clamping a wafer to be cleaned on the support frame, and placing the wafer in a chemical cleaning tank containing first cleaning liquid to perform first cleaning treatment;
placing the wafer subjected to the first cleaning treatment in the rinsing tank for primary rinsing;
placing the wafer subjected to the primary washing in a chemical washing tank containing a second washing liquid for second washing treatment;
placing the wafer subjected to the second cleaning treatment in the rinsing tank for secondary rinsing;
placing the wafer subjected to the secondary washing in a chemical washing tank containing a third washing liquid to carry out third washing treatment;
placing the wafer subjected to the third cleaning treatment in the rinsing tank for rinsing for three times;
and generating an oxide layer on the surface of the wafer after the second cleaning treatment.
According to an embodiment of the present invention, the method further includes rotating the wafer after the cleaning step by 30 to 330 degrees, and repeating the cleaning step at least once.
According to one embodiment of the present invention, the first cleaning liquid is a hydrofluoric acid solution, and the third cleaning liquid is a mixed solution of ammonia hydroxide and hydrogen peroxide.
According to one embodiment of the invention, the second cleaning solution is one or more selected from a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of hydrochloric acid and hydrogen peroxide, a mixed solution of hydrofluoric acid and hydrogen peroxide, and an aqueous solution of hydrogen peroxide.
According to one embodiment of the present invention, the thickness of the oxide layer after the second cleaning treatment is 1nm to 10 nm.
According to one embodiment of the invention, the wafer surface to be cleaned contains silicon nitride contaminants.
According to one embodiment of the present invention, the supporting frame can be vertically lifted and lowered, and has a plurality of receiving points clamped at the bottom of the wafer.
According to one embodiment of the present invention, the cleaning step is performed using a single wafer cleaning process, a batch cleaning process, or a scrub cleaning process.
According to one embodiment of the present invention, the cleaning step is performed by a batch cleaning process, and the wafer batch is uniformly rotated by 30 to 330 degrees before the cleaning step is repeated.
According to an embodiment of the invention, the wafer cleaning machine further comprises a drying tank, and the cleaning step further comprises placing the wafer after the third rinsing in the drying tank for drying.
The invention has the beneficial effects that:
the wafer cleaning process provided by the invention adopts specific multiple cleaning treatment steps, and adds an oxidation cleaning treatment step on the basis of the traditional cleaning process, so that the defect (roughness) that the surface is rough and uneven due to the reaction of the wafer and the cleaning liquid in the process of high-concentration cleaning liquid and long-time cleaning treatment is avoided. In addition, the invention can also convert the wafer cleaning angle by repeating the cleaning step twice or for multiple times, solves the problem that the cleaning blind zone is easy to appear in the traditional wet cleaning process to generate pollutant residue (residual), and enables the pollutants on the surface of the wafer to be completely removed.
In a word, the wafer cleaning method is simple to operate, has a good cleaning effect, can be applied to various wet cleaning processes such as a single-wafer cleaning process, a batch cleaning process or a washing and brushing cleaning process, and is suitable for large-scale industrial production.
Drawings
In order that the embodiments of the invention may be more readily understood, reference should now be made to the following detailed description taken in conjunction with the accompanying drawings. It should be noted that, in accordance with industry standard practice, various components are not necessarily drawn to scale and are provided for illustrative purposes only. In fact, the dimensions of the various elements may be arbitrarily expanded or reduced for clarity of discussion.
FIG. 1 is a schematic diagram illustrating a wafer cleaning state in a chemical cleaning tank;
FIG. 2 is a schematic diagram illustrating a wafer surface defect cleaned by a conventional wet cleaning process;
fig. 3 is a Scanning Electron Microscope (SEM) image of the triangular area portion of fig. 2.
FIG. 4 illustrates a flow diagram of a wafer cleaning process in accordance with one embodiment of the present invention;
FIGS. 5a and 5b are schematic views illustrating the states of a first clean (first run) and a second clean (second run) of a wafer, respectively, according to an embodiment of the present invention;
fig. 6a and 6b are schematic diagrams illustrating defects of a wafer after a first cleaning (first run) and a second cleaning (second run), respectively, according to an embodiment of the present invention.
Wherein the reference numerals are as follows:
1: chemical cleaning tank
2: wafer
3: supporting frame
31. 32, 33: receiving point
Detailed Description
The following provides many different embodiments, or examples, for implementing different features of embodiments of the invention. Specific examples of components and arrangements are described below to simplify the present embodiments. These are, of course, merely examples and are not intended to limit embodiments of the invention. Embodiments of the present invention may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present invention.
Forming a component on, connected to, and/or coupled to another component in embodiments of the invention may include forming embodiments in which the component directly contacts the other component, and may also include forming additional components between the components such that the components do not directly contact. Furthermore, for ease of describing the relationship between one component and another component of embodiments of the present invention, spatially relative terms such as "lower," "upper," "horizontal," "vertical," "above …," "above," "below …," "below …," "up," "down," "top," "bottom," and the like may be used herein. These spatially relative terms are intended to encompass different orientations of the device in which the components are incorporated.
Wet cleaning is an essential process in wafer production, and takes batch cleaning process (batch clean) as an example, wafer batches are sequentially placed into a chemical cleaning tank, a water tank, a multifunctional tank and a drying tank in a wafer cleaning machine according to a specific sequence, and pollutants, such as silicon nitride, on the wafer surface are removed through soaking or flushing of chemicals.
However, a number of problems are often encountered in cleaning wafers of contaminants. For example:
as shown in FIG. 1, a wafer 2 to be cleaned is shown in a chemical cleaning tank 1, the wafer 2 having a surface with silicon nitride (SiN) contaminants and being held on a support (lifter)3The included angle between each two connecting points (edge holes) 31, 32, 33 is 52.5 degrees. During the wet cleaning process, the support frame 3 carries the wafer 2 and vertically descends at a certain speed to enter the chemical cleaning tank 1 for cleaning. The cleaning process typically includes: firstly, hydrofluoric acid (HF) is adopted to process silicon nitride on the surface of a wafer, then the silicon nitride enters a quick discharge rinsing tank (QDR tank) to be rinsed (rinse), and then APM solution is adopted to be cleaned, wherein the APM solution is prepared by ammonia hydroxide (NH) with a certain proportion4OH) and hydrogen peroxide (H)2O2) The mixed solution composition is used for further removing the pollutants on the surface of the wafer. And after the APM is cleaned, carrying out rinsing treatment (rinse) again, and drying to finish the cleaning process.
The chemical reaction equation of hydrofluoric acid treatment silicon nitride is as follows:
4HF+Si3N4+9H2O＝3H2SiO3+4NH4F
however, the wafer surface treated with the above cleaning process often has defects. FIG. 2 is a schematic diagram of a wafer surface defect cleaned by a conventional wet cleaning process. Fig. 3 is a Scanning Electron Microscope (SEM) image of the triangular area portion of fig. 2. The triangular region is the location of the support receiving point, and it can be seen that the location of the receiving point for holding the wafer is the dead zone of cleaning of the wafer surface, which produces most of the silicon nitride contaminant residue (residual). The conventional method for solving the above problems is to increase the concentration of HF and the processing time of HF, however, the HF often reacts with the silicon wafer at the same time, and the surface of the wafer is rough (rough). The chemical reaction equation for the reaction of HF with the silicon wafer is:
4HF+Si＝H2+SiF4
in order to solve the above problems, the present invention provides a method for cleaning a wafer, wherein the wafer is cleaned by a wafer cleaning machine, the wafer cleaning machine includes a chemical cleaning tank and a rinsing tank, a support frame is disposed in the chemical cleaning tank, as shown in fig. 4, the method includes the following steps:
clamping a wafer to be cleaned on the support frame, and placing the wafer in a chemical cleaning tank containing first cleaning liquid to perform first cleaning treatment;
placing the wafer subjected to the first cleaning treatment in the rinsing tank for primary rinsing;
placing the wafer subjected to the primary washing in a chemical washing tank containing a second washing liquid for second washing treatment;
placing the wafer subjected to the second cleaning treatment in the rinsing tank for secondary rinsing;
placing the wafer subjected to the secondary washing in a chemical washing tank containing a third washing liquid to carry out third washing treatment;
placing the wafer subjected to the third cleaning treatment in the rinsing tank for rinsing for three times;
and generating an oxide layer on the surface of the wafer after the second cleaning treatment.
Specifically, in some embodiments, the wafer to be cleaned is first carried and held by the aforementioned support (lifter), which is vertically movable and has a plurality of receiving points, for example, three receiving points, held at the bottom of the wafer, and an included angle between each two receiving points is about 52.5 degrees. And (4) vertically descending at a certain speed through a lifter, and carrying out first cleaning treatment when the wafer enters a chemical cleaning tank containing first cleaning liquid.
In some embodiments, the first cleaning solution is a hydrofluoric acid solution. The concentration of the hydrofluoric acid solution is about 49%, and the first cleaning treatment time is 15 to 25 seconds, preferably 20 seconds. Most of the contaminants including but not limited to silicon nitride, native oxide, etc. on the wafer surface are removed by the first cleaning process.
Placing the wafer subjected to the first cleaning treatment in a rinsing tank for rinsing (rinse) for the first time; the washing process specifically comprises: washing with deionized water at 22-23 deg.c and 60L/min flow rate for about 600 sec.
And after one-time washing, placing the wafer subjected to one-time washing in a chemical washing tank containing a second washing liquid for second washing treatment.
In some embodiments, the first stepThe second cleaning solution is selected from mixed Solution (SPM) of sulfuric acid and hydrogen peroxide, mixed solution (HPM) of hydrochloric acid and hydrogen peroxide, mixed solution (DHF) of hydrofluoric acid and hydrogen peroxide, and hydrogen peroxide (H)2O2) One or more of (a) and (b). Preferably an SPM solution. In some embodiments, the thickness of the oxide layer after the second cleaning process is 1nm to 10 nm. Taking SPM solution as the cleaning liquid as an example, wherein H2SO4And H2O2The concentration ratio of (1): SPM oxide formation rate of 10
I.e. an oxide layer of 1nm can be formed every 25 minutes. And adjusting the concentration proportion of the solution and the reaction time according to the actually required thickness of the oxide layer to form the oxide layer with the corresponding thickness. The thickness of the oxide layer is preferably not too thin or too thick, and is preferably within the above range. The surface of the wafer after the second cleaning treatment generates oxides, which are mainly oxidized by the oxidability of hydrogen peroxide, so that the direct contact between the acid cleaning solution and the surface of the silicon wafer is avoided, and the hidden trouble of rough surface (roughness) of the wafer is avoided.
Placing the wafer subjected to the second cleaning treatment in a rinsing tank for secondary rinsing (rinse); the washing process specifically comprises: washing with deionized water at 65-68 deg.c and 60L/min flow rate for about 600 sec.
And after the secondary washing is finished, placing the wafer subjected to the secondary washing in a chemical washing tank containing a third washing liquid for third washing treatment. In some embodiments, the third cleaning solution is a mixed solution of ammonia hydroxide and hydrogen peroxide. For example, with ammonium hydroxide (NH)4OH), hydrogen peroxide (H)2O2) And the third cleaning liquid with the mass ratio of the deionized water (DIW) to the deionized water (DIW) of 1:4:130 is subjected to third cleaning treatment for 300 s.
And then, washing the wafer subjected to the third washing treatment for three times, wherein the washing process specifically comprises the following steps: washing with deionized water at 22-23 deg.c and 60L/min flow rate for about 600 sec.
Further, the wafer cleaning machine can further comprise a drying tank, the cleaning step further comprises the step of placing the wafer which is washed for three times into the drying tank for drying, and the wafer with the clean surface is obtained after drying.
In some embodiments, the cleaning method further includes rotating the wafer after the cleaning step is completed by a certain angle, and repeating the cleaning step at least once. That is, the wafer after the first cleaning process, the first rinsing process, the second cleaning process, the second rinsing process, the third cleaning process, and the third rinsing process is defined as a wafer after the first rinsing (first run) is completed, and then the wafer is rotated by a certain angle, and the cleaning step is repeated at least once. As mentioned above, the cleaning step may further include a drying step, and the wafer may be cleaned at least once after the drying step in one cleaning is completed.
Take the above washing step as an example (double run) repeatedly:
as shown in fig. 5a and 5b, a wafer notch (wafer notch) is aligned to a position right below a cleaning machine and enters (i.e. corresponding to a direction of 6 o' clock), and the position at this time is recorded as 0 degree, and then the cleaning step is performed, so that after a cleaning (first run) step is completed, a cleaning blind area remains under the influence of a lifter, and a large number of defects exist at the cleaning blind area (inside a triangular frame) (see fig. 6 a); the wafer is rotated to expose the cleaning blind area, preferably by 30-330 degrees, for example, by 180 degrees (i.e. corresponding to 12 o' clock direction), and the cleaning step (second run) is repeated once again to complete the cleaning process of the wafer. Fig. 6b shows a schematic diagram of the defect after the second cleaning (second run) of the wafer. It can be seen that after second run, the influence of the cleaning blind area is solved by converting the angle of the wafer entering the groove area, and the obtained wafer is basically free of defects.
Of course, according to the actual requirement, the wafer angle may be adjusted to continue the three-time cleaning and the four-time cleaning … until the wafer to be cleaned reaches the standard required by the production.
In some embodiments, the wafer angle may be adjusted by taking the wafer out of the chemical cleaning tank by a robot, and after the angle is changed, the wafer is placed in the chemical cleaning tank to continue the second cleaning step.
In some embodiments, the rotation angle of the wafer is preferably 30 to 330 degrees, such as 90 degrees, 180 degrees, 270 degrees, and the like, and more preferably 180 degrees. When the wafer is rotated by 180 degrees, the cleaning blind areas of the previous cleaning of the wafer can be completely exposed in the next cleaning step, so that the cleaning is more thorough, and the rotation angle is easier to control.
The foregoing cleaning step of the present invention is applicable to a batch cleaning process (batch cleaning process), but is not limited thereto, for example, a single wafer cleaning process (single wafer cleaning process), a scrub cleaning process (scrubber cleaning process), and the like.
Taking the batch cleaning process of the wafer as an example, when the batch cleaning process is used to perform the above repeated cleaning steps, the wafer batch needs to be rotated uniformly. For example, during first run, the wafer is uniformly turned to 0 degree before entering the cleaning machine, and during second run, the wafer batch is uniformly rotated to expose the corresponding cleaning blind area, preferably 30 to 330 degrees, and more preferably 180 degrees.
It should be noted that the wafer surface to be cleaned according to the present invention contains silicon nitride contaminants, but is not limited to only containing silicon nitride contaminants. The method of the invention well solves the problem of cleaning blind areas which often appear in the process of cleaning the wafer, and simultaneously avoids the problem of high roughness of the wafer caused by the reaction of the cleaning solution and the silicon wafer.
It should be noted by those skilled in the art that the described embodiments of the present invention are merely exemplary and that various other substitutions, alterations, and modifications may be made within the scope of the present invention. Accordingly, the present invention is not limited to the above-described embodiments, but is only limited by the claims.
Claims (10)
1. A cleaning method of a wafer is characterized in that the cleaning method comprises the following cleaning steps:
clamping a wafer to be cleaned on the support frame, and placing the wafer in a chemical cleaning tank containing first cleaning liquid to perform first cleaning treatment;
placing the wafer subjected to the first cleaning treatment in the rinsing tank for primary rinsing;
placing the wafer subjected to the primary washing in a chemical washing tank containing a second washing liquid for second washing treatment;
placing the wafer subjected to the second cleaning treatment in the rinsing tank for secondary rinsing;
placing the wafer subjected to the secondary washing in a chemical washing tank containing a third washing liquid to carry out third washing treatment;
placing the wafer subjected to the third cleaning treatment in the rinsing tank for rinsing for three times;
and generating an oxide layer on the surface of the wafer after the second cleaning treatment.
2. The cleaning method according to claim 1, further comprising repeating the cleaning step at least once after rotating the wafer by 30 to 330 degrees after the cleaning step.
3. The cleaning method according to claim 1, wherein the first cleaning liquid is a hydrofluoric acid solution, and the third cleaning liquid is a mixed solution of ammonia hydroxide and hydrogen peroxide.
4. The cleaning method according to claim 1, wherein the second cleaning liquid is one or more selected from a mixed solution of sulfuric acid and hydrogen peroxide, a mixed solution of hydrochloric acid and hydrogen peroxide, a mixed solution of hydrofluoric acid and hydrogen peroxide, and an aqueous solution of hydrogen peroxide.
5. The cleaning method according to claim 1, wherein the thickness of the oxide layer after the second cleaning treatment is 1nm to 10 nm.
6. The cleaning method of claim 1, wherein the wafer surface to be cleaned contains silicon nitride contaminants.
7. The method as claimed in claim 1, wherein the support frame is vertically movable and has a plurality of receiving points for holding the bottom of the wafer.
8. The cleaning method according to claim 1, wherein the cleaning step is performed using a single-wafer cleaning process, a batch cleaning process, or a scrub cleaning process.
9. The method of claim 2, wherein the cleaning step is performed by a batch cleaning process, and the wafer batch is uniformly rotated by 30-330 degrees before the cleaning step is repeated.
10. The cleaning method according to claim 1 or 2, wherein the wafer cleaning machine further comprises a drying tank, and the cleaning step further comprises placing the wafer after the third rinsing in the drying tank for drying.
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| CN112992657A (en) * | 2021-03-01 | 2021-06-18 | 昆山基侑电子科技有限公司 | Wafer cleaning method |
| CN114985365A (en) * | 2022-04-18 | 2022-09-02 | 江苏鑫华半导体科技股份有限公司 | Polycrystalline silicon sample core cleaning analysis method and system |
| CN116093009A (en) * | 2022-12-16 | 2023-05-09 | 苏州赛森电子科技有限公司 | Cleaning mechanism and silicon wafer decontamination machine |
| CN116759296A (en) * | 2023-08-17 | 2023-09-15 | 成都高投芯未半导体有限公司 | Processing method for preventing ion pollution of wafer back surface process |
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| CN112410888A (en) * | 2020-11-20 | 2021-02-26 | 上海提牛机电设备有限公司 | Etching liquid and etching method for back of ultrathin wafer |
| CN112992657A (en) * | 2021-03-01 | 2021-06-18 | 昆山基侑电子科技有限公司 | Wafer cleaning method |
| CN114985365A (en) * | 2022-04-18 | 2022-09-02 | 江苏鑫华半导体科技股份有限公司 | Polycrystalline silicon sample core cleaning analysis method and system |
| CN116093009A (en) * | 2022-12-16 | 2023-05-09 | 苏州赛森电子科技有限公司 | Cleaning mechanism and silicon wafer decontamination machine |
| CN116093009B (en) * | 2022-12-16 | 2024-03-19 | 苏州赛森电子科技有限公司 | Cleaning mechanism and silicon wafer decontamination machine |
| CN116759296A (en) * | 2023-08-17 | 2023-09-15 | 成都高投芯未半导体有限公司 | Processing method for preventing ion pollution of wafer back surface process |
| CN116759296B (en) * | 2023-08-17 | 2023-12-19 | 成都高投芯未半导体有限公司 | Processing method for preventing ion pollution of wafer back surface process |
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