CN108511316A - The cleaning method of semiconductor wafer - Google Patents
The cleaning method of semiconductor wafer Download PDFInfo
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- CN108511316A CN108511316A CN201710106135.XA CN201710106135A CN108511316A CN 108511316 A CN108511316 A CN 108511316A CN 201710106135 A CN201710106135 A CN 201710106135A CN 108511316 A CN108511316 A CN 108511316A
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- semiconductor wafer
- cleaning
- rinsed
- deionized water
- cleaning method
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02082—Cleaning product to be cleaned
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The cleaning method of the semiconductor wafer of the present invention, includes the following steps successively：(1) semiconductor wafer is rinsed using deionized water and semiconductor wafer is subjected to degumming process；(2) semiconductor wafer is rinsed using APM cleaning solutions, which is NH4OH、H2O2And H20 mixed liquor rinses the semiconductor wafer after the flushing of APM cleaning solutions with deionized water；(3) semiconductor wafer is rinsed using HPM cleaning solutions, which is HCL, H2O2And H20 mixed liquor rinses the semiconductor wafer after the flushing of HPM cleaning solutions with deionized water；(4) semiconductor wafer is rinsed using DHF solution, which is HF and H20 mixed liquor rinses the semiconductor wafer after the flushing of DHF solution with deionized water；And (5) dry the semiconductor wafer.This method cleaning performance is good, cleaning efficiency is high, reduces cleaning cost, is suitable for industrial extensive use.
Description
Technical field
The present invention relates to semiconductor cleaning field more particularly to a kind of cleaning methods of semiconductor wafer.
Background technology
With the development of super large-scale integration, integrated level is continuously improved, and characteristic size during which constantly reduces, half-and-half
The requirement of conductor chip surface of silicon cleanliness factor is also more preferably stringent, and Wafer Cleaning causes already in the importance of semi-conductor industry
The great attention of people.The pollutant of surface of silicon will seriously affect the physical property and electrical properties of silicon substrate part,
If cleaning performance is bad to will have a direct impact on integrated circuit, the yield rate of device, Performance And Reliability.
Currently, often by the cleaning of weak acid or weak base in the cleaning of semiconductor wafer so that the dirt on surface
Object is contaminated to remove.However, the metal ion that acid ion and alkali radical ion generate, makes surface metal generate corrosion phenomenon, makes product
The reduction of qualification rate and the increase of production cost.
So there is an urgent need for a kind of cleaning methods of improved semiconductor wafer to overcome disadvantages described above.
Invention content
The purpose of the present invention is to provide a kind of cleaning method of semiconductor wafer, cleaning performance is good, cleaning efficiency is high,
Cleaning cost is reduced, industrial extensive use is suitable for.
To achieve the above object, the cleaning method of semiconductor wafer of the invention, includes the following steps successively：
(1) semiconductor wafer is rinsed using deionized water and semiconductor wafer is subjected to degumming process；
(2) semiconductor wafer is rinsed using APM cleaning solutions, which is NH4OH、H2O2And H20 it is mixed
Liquid is closed, the semiconductor wafer is rinsed with deionized water after the flushing of APM cleaning solutions；
(3) semiconductor wafer is rinsed using HPM cleaning solutions, which is HCL, H2O2And H20 mixing
Liquid rinses the semiconductor wafer after the flushing of HPM cleaning solutions with deionized water；
(4) semiconductor wafer is rinsed using DHF solution, which is HF and H20 mixed liquor, by DHF
After solution flushing the semiconductor wafer is rinsed with deionized water；And
(5) dry semiconductor wafer.
Compared with prior art, the effective procedure of semiconductor cleaning method of the invention is carried out clearly with APM cleaning solutions first
Wash to remove the organic pollution of plane of crystal and partial metal pollutant, then using HPM cleaning solutions cleaned from
And remove the metal pollutant, metal oxide, hydroxide of plane of crystal etc., then cleaned to remove using DHF
Natural oxidizing layer, photoetching residue glue etc. can be cleaned more effectively, more quickly by the cleaning sequence of the above specific cleaning solution
The surface of semiconductor wafer improves product qualification rate and reduces production cost, is suitable for industrial extensive use.
Preferably, the degumming process in step (1) includes：Semiconductor wafer is cleaned with isopropanol, cleaning temperature is
20~30 degree, the time is 20~30 minutes.
Preferably, the temperature that the APM cleaning solutions in step (2) rinse is 70~80 degree, the time is 10~20 minutes.
Preferably, the temperature that the HPM cleaning solutions in step (3) rinse is 70~80 degree, the time is 10~20 minutes.
Preferably, step (5) specifically includes：The semiconductor wafer is dried using IPA vapor.
Preferably, wherein NH4OH、H2O2And H20 volume ratio is 1：1：5.
Preferably, wherein HCL, H2O2And H20 volume ratio is 1：1：6.
Preferably, wherein HF and H20 volume ratio is 1：99.
Specific implementation mode
The cleaning method of the semiconductor crystal of the present invention is described further with reference to embodiment, but is not so limited
The present invention.
One embodiment of the cleaning method of the semiconductor wafer of the present invention includes the following steps：
Pretreatment：Semiconductor wafer is rinsed using deionized water and semiconductor wafer is subjected to degumming process；
APM is cleaned：Semiconductor wafer is rinsed using APM cleaning solutions, which is NH4OH、H2O2And H20
Mixed liquor, with deionized water rinse the semiconductor wafer after the flushing of APM cleaning solutions；
HPM is cleaned：Semiconductor wafer is rinsed using HPM cleaning solutions, which is HCL, H2O2And H20
Mixed liquor rinses the semiconductor wafer after the flushing of HPM cleaning solutions with deionized water；
DHF is cleaned：Semiconductor wafer is rinsed using DHF solution, which is the mixed liquor of HF and H20, warp
It crosses after DHF solution rinses and rinses the semiconductor wafer with deionized water；
It is dry：The dry semiconductor wafer.
Specifically, include in pre-treatment step：Semiconductor wafer is cleaned with deionized water, temperature is 75~85 degree, when
Between be 10-20 minutes, with attachments such as the dusts that removes semiconductor wafer surface.Then, in degumming process, using isopropanol
It is cleaned, cleaning temperature is 20~30 degree, and the time is 20~30 minutes, and the concentration and ratio of isopropanol solvent can be according to reality
Situation is added, and this is not described in detail here.Since the process of chip needs the surface for being bonded in fixture to carry out, so different
Propyl alcohol can clean and remove the glue of plane of crystal well.
In APM cleaning steps, APM cleaning solutions are SC-1 cleaning solutions, are NH4OH、H2O2And H20 mixed liquor,
Preferably, NH4OH、H2O2And H20 volume ratio is 1：1：5.The purpose of this step is to remove the organic pollution of plane of crystal
With the metal pollutant of part.Specifically, the NH in APM cleaning solutions is utilized4The hydrolysis and H of OH2O2Strong oxdiative power, can
The organic pollution of plane of crystal is effectively removed, and inorganic impurity is oxidized to high valence ion and oxide and is removed；Moreover,
NH4OH can form network with generation complex reactions such as the pollution metal ions such as copper ion, silver ion, nickel ion, cadmium ion of part
Object is closed, the complex compound of generation is dissolved in water to remove.The cleaning way of this step is cleaned by ultrasonic vibration, cleaning temperature 70
~80 degree, the time is to be advisable for 10~20 minutes.Chip is rinsed with deionized water after the flushing of APM cleaning solutions, by APM cleaning solutions
Liquid Residue is removed, and deionized temperature is 75~85 degree, and the time is to be advisable for 10~20 minutes.
Then, in HPM cleaning steps, HPM cleaning solutions are SC-2 cleaning solutions, are HCL, H2O2And H20 mixing
Liquid, preferably, HCL, H2O2And H20 volume ratio is 1：1：6.The purpose of this step is to remove the metallic pollution of plane of crystal
Object and hydroxide.Wherein, H2O2Inorganic impurity can be oxidized to high valence ion and oxide to which inorganic impurity is further clear
It removes.And hydrochloric acid makes H2O2Oxidation susceptibility greatly reinforce, and with the active metal (such as Al, Zn) in impurities on surface of silicon chip, metal oxygen
Compound (such as Fe2O3Deng), hydroxide, sulfide, the interactions such as carbonate, so that these impurity is become soluble salt, in addition
Hydrochloric acid also has the effect of complexing agent, the chlorion in hydrochloric acid and Au concurrently3+、Pt2+、Cu+、Ag+、Hg2+、Fe3+Equal metal ions are formed
It is dissolved in the complex compound of water.The cleaning way of this step is cleaned by ultrasonic vibration, and cleaning temperature is 70~80 degree, the time for 10~
It is advisable within 20 minutes.Chip is rinsed with deionized water after the flushing of HPM cleaning solutions, HPM cleaning solution Liquid Residues are removed, deionization
Temperature be 75~85 degree, the time was advisable for 10~20 minutes.
Then, it in DHF cleaning steps, is cleaned using diluted hydrofluoric acid DHF, HF and H wherein in diluted hydrofluoric acid20
Volume ratio be 1：99, can remove natural oxidizing layer, photoetching residue glue.DHF inhibits the formation of oxidation film simultaneously, therefore can be with
The Al, Fe, Zn of wafer surface, the metals such as Ni are easily removed, DHF can also remove the metal being attached in native oxide
Hydroxide.When being cleaned with DHF, when native oxide is corroded, wafer surface will not be corroded.By DHF solvents
Chip is rinsed with deionized water after flushing, DHF is removed, deionized temperature is 75~85 degree, and the time is 10~20 minutes to be
Preferably.
In drying steps, the moisture of wafer surface is taken away using IPA vapor, to complete entire cleaning process.
It is of course possible to take other drying means to be dried.
To sum up, the effective procedure of semiconductor cleaning method of the invention is cleaned to remove with APM cleaning solutions first
The organic pollution of plane of crystal and partial metal pollutant then are cleaned to remove crystal using HPM cleaning solutions
Metal pollutant, metal oxide, the hydroxide on surface etc., then using DHF cleaned to go removing natural oxidizing layer,
The residue glue etc. of photoetching, by the cleaning sequence of the above specific cleaning solution, can more effectively, clean semiconductor wafer more quickly
Surface improves product qualification rate and reduces production cost, is suitable for industrial extensive use.
Above disclosed is only presently preferred embodiments of the present invention, cannot limit the right of the present invention with this certainly
Range, therefore according to equivalent variations made by scope of the present invention patent, be still within the scope of the present invention.
Claims (8)
1. a kind of cleaning method of semiconductor wafer, includes the following steps successively：
(1) semiconductor wafer is rinsed using deionized water and semiconductor wafer is subjected to degumming process；
(2) semiconductor wafer is rinsed using APM cleaning solutions, which is NH4OH、H2O2And H20 mixed liquor,
After the flushing of APM cleaning solutions the semiconductor wafer is rinsed with deionized water；
(3) semiconductor wafer is rinsed using HPM cleaning solutions, which is HCL, H2O2And H20 mixed liquor, warp
It crosses after HPM cleaning solutions rinse and rinses the semiconductor wafer with deionized water；
(4) semiconductor wafer is rinsed using DHF solution, which is HF and H20 mixed liquor, by DHF solution
After flushing the semiconductor wafer is rinsed with deionized water；And
(5) dry semiconductor wafer.
2. the cleaning method of semiconductor wafer as described in claim 1, it is characterised in that：At the degumming in step (1)
Reason includes：Semiconductor wafer is cleaned with isopropanol, cleaning temperature is 20~30 degree, and the time is 20~30 minutes.
3. the cleaning method of semiconductor wafer as described in claim 1, it is characterised in that：APM cleaning solutions punching in step (2)
The temperature washed is 70~80 degree, and the time is 10~20 minutes.
4. the cleaning method of semiconductor wafer as described in claim 1, it is characterised in that：HPM cleaning solutions punching in step (3)
The temperature washed is 70~80 degree, and the time is 10~20 minutes.
5. the cleaning method of semiconductor wafer as described in claim 1, it is characterised in that：Step (5) specifically includes：Using different
The propyl alcohol steam drying semiconductor wafer.
6. the cleaning method of semiconductor wafer as described in claim 1, it is characterised in that：Wherein NH4OH、H2O2And H20 body
Product is than being 1：1：5.
7. the cleaning method of semiconductor wafer as described in claim 1, it is characterised in that：Wherein HCL, H2O2And H20 volume
Than being 1：1：6.
8. the cleaning method of semiconductor wafer as described in claim 1, it is characterised in that：Wherein HF and H20 volume ratio is 1：
99。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710106135.XA CN108511316A (en) | 2017-02-27 | 2017-02-27 | The cleaning method of semiconductor wafer |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710106135.XA CN108511316A (en) | 2017-02-27 | 2017-02-27 | The cleaning method of semiconductor wafer |
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| CN108511316A true CN108511316A (en) | 2018-09-07 |
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| CN201710106135.XA Pending CN108511316A (en) | 2017-02-27 | 2017-02-27 | The cleaning method of semiconductor wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
| CN112474550A (en) * | 2020-09-21 | 2021-03-12 | 北京镓族科技有限公司 | Cleaning method for gallium oxide wafer after CMP |
| CN114806747A (en) * | 2022-04-28 | 2022-07-29 | 安徽富乐德科技发展股份有限公司 | Wafer cleaning water and method for cleaning wafer |
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| CN1338771A (en) * | 2001-06-15 | 2002-03-06 | 旺宏电子股份有限公司 | Method for cleaning semiconductor wafer |
| CN1424745A (en) * | 2003-01-02 | 2003-06-18 | 上海华虹（集团）有限公司 | Single-step clean method for diffuse and oxidation process |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
| CN106783527A (en) * | 2015-11-23 | 2017-05-31 | 东莞新科技术研究开发有限公司 | The cleaning method of semiconductor wafer |
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2017
- 2017-02-27 CN CN201710106135.XA patent/CN108511316A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1338771A (en) * | 2001-06-15 | 2002-03-06 | 旺宏电子股份有限公司 | Method for cleaning semiconductor wafer |
| CN1424745A (en) * | 2003-01-02 | 2003-06-18 | 上海华虹（集团）有限公司 | Single-step clean method for diffuse and oxidation process |
| CN101211774A (en) * | 2006-12-29 | 2008-07-02 | 斯尔瑞恩公司 | Method for cleaning silicon wafer |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
| CN106783527A (en) * | 2015-11-23 | 2017-05-31 | 东莞新科技术研究开发有限公司 | The cleaning method of semiconductor wafer |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110681624A (en) * | 2019-09-02 | 2020-01-14 | 山西烁科晶体有限公司 | Final cleaning method for silicon carbide single crystal polished wafer substrate |
| CN112474550A (en) * | 2020-09-21 | 2021-03-12 | 北京镓族科技有限公司 | Cleaning method for gallium oxide wafer after CMP |
| CN112474550B (en) * | 2020-09-21 | 2022-04-05 | 北京铭镓半导体有限公司 | Cleaning method for gallium oxide wafer after CMP |
| CN114806747A (en) * | 2022-04-28 | 2022-07-29 | 安徽富乐德科技发展股份有限公司 | Wafer cleaning water and method for cleaning wafer |
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Application publication date: 20180907 |
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