CN106783527A - The cleaning method of semiconductor wafer - Google Patents
The cleaning method of semiconductor wafer Download PDFInfo
- Publication number
- CN106783527A CN106783527A CN201510821566.5A CN201510821566A CN106783527A CN 106783527 A CN106783527 A CN 106783527A CN 201510821566 A CN201510821566 A CN 201510821566A CN 106783527 A CN106783527 A CN 106783527A
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- Prior art keywords
- cleaning
- semiconductor wafer
- acid
- cleaning method
- chip
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The cleaning method of semiconductor wafer of the invention, including degumming step：Add isopropanol cleaning；First acid pickling step：Add the amidosulphuric acid solution that mass fraction is 0.1%~0.2%, the scheduled duration of wash cycles first；The citric acid solution that mass fraction is 0.1%~0.3% is added, the second scheduled duration is cleaned；And second acid pickling step：The ratio for using hydrofluoric acid and water is 1：99 diluted hydrofluoric acid cleaning.Cleaning performance of the present invention is good, cleaning efficiency is high, reduce cleaning cost, is suitable to industrial extensive use.
Description
Technical field
The present invention relates to semiconductor cleaning field, more particularly to a kind of cleaning method of semiconductor wafer.
Background technology
It is necessary operation during production of semiconductor products that semiconductor clean, and it seems cumbersome and weighs
Will.Particularly in integrated circuits, wafer surface often adheres to the dirts such as organic matter, metal oxide, particulate
Dye thing, to ensure the performance of integrated circuit, the cleaning to chip can not be ignored.Current industry is generally adopted
RCA standard cleaning techniques, it uses SPM, APM, DHF, HPM equal solvent to be cleaned,
But it haves the shortcomings that cleaning fluid easily remains in plane of crystal, cleaning fluid reacts easily crystallization in atmosphere,
Therefore secondary cleaning is also carried out, so as to the cleaning cost for causing increases.
So, a kind of cleaning method of improved semiconductor wafer is needed badly to reach more preferable cleaning performance and drop
Low cleaning cost.
The content of the invention
It is an object of the invention to provide a kind of cleaning method of semiconductor wafer, its cleaning performance is good, cleaning
Efficiency high, reduction cleaning cost, are suitable to industrial extensive use.
To achieve the above object, the cleaning method of semiconductor wafer of the invention, comprises the following steps：
Degumming step：Add isopropanol cleaning；
First acid pickling step：Add the amidosulphuric acid solution that mass fraction is 0.1%~0.2%, wash cycles the
One scheduled duration；The citric acid solution that mass fraction is 0.1%~0.3% is added, the second scheduled duration is cleaned；
Second acid pickling step：The ratio for using hydrofluoric acid and water is 1：99 diluted hydrofluoric acid cleaning.
The present invention carries out degumming process by using isopropanol to chip, using amidosulphuric acid solution, citric acid
Solution is cleaned, and is cleaned using DHF, so as to effectively clean organic matter, the metal of wafer surface
Oxide, particulate etc., are suitable to industrial extensive use.
It is preferred that also including cleaning chip with deionized water before the degumming step.
It is preferred that also including using deionized water after the degumming step, before first acid pickling step
Cleaning chip.
It is preferred that after first acid pickling step, before second acid pickling step also include spend from
Sub- water cleans chip.
It is preferred that also including cleaning chip with deionized water after second acid pickling step.
It is preferred that also including the drying chip after cleaning chip with deionized water.
It is preferred that in first acid pickling step, first scheduled duration is 1~3 hour, the amino
The temperature control of sulfuric acid solution is at 40~50 degree.
It is preferred that second scheduled duration is 0.5~1 hour, and it is molten to add alkali lye to adjust the citric acid
The pH of liquid is controlled 3.5~4.0.
It is preferred that the alkali lye is ammoniacal liquor.Ammoniacal liquor is added in first time acid cleaning process carries out pH value regulation,
So as to be conducive to second carrying out of acid pickling step.
Specific embodiment
The cleaning method of semiconductor crystal of the invention is described further with reference to embodiment, but not because
This limitation present invention.
One embodiment of the present of invention is comprised the following steps：
Degumming step：Add isopropanol cleaning.
First acid pickling step：Add the amidosulphuric acid solution that mass fraction is 0.1%~0.2%, wash cycles the
One scheduled duration；The citric acid solution that mass fraction is 0.1%~0.3% is added, the second scheduled duration is cleaned；
Second acid pickling step：The ratio for using hydrofluoric acid and water is 1：99 diluted hydrofluoric acid cleaning.
Specifically, the concentration and ratio of isopropanol solvent can be added according to actual conditions in degumming step,
It is not described here in detail.Carried out because the process of chip needs the surface for being bonded in fixture, so isopropyl
Alcohol can well be cleaned and remove the glue of plane of crystal.
It is preferred that after degumming process, the chip is cleaned with deionized water, temperature is 60 degree, when be about
2 minutes, it is therefore an objective to the aqueous isopropanol of removal residual.
More preferably, before degumming process, the chip is first cleaned with deionized water, it is therefore an objective to remove chip table
The physical impurities such as the dust in face.
In the first acid pickling step, amidosulphuric acid solution that mass fraction is 0.1%~0.2% can be added or with ammonia
Compound-acid solution based on base sulfuric acid is circulated cleaning, when a length of 1~3 hour, temperature control is 40~50
Degree is preferred.Then, drain after amidosulphuric acid solution, use mass fraction molten for 0.1%~0.3% citric acid
Liquid clean, temperature control at 40 degree, a length of 0.5~1 hour during cleaning.Citric acid can be protected as corrosion inhibiter
Protect by the wafer surface after the cleaning of amidosulphuric acid solution, prevent it by secondary oxidation.It is preferred real as one
Example is applied, in first acid pickling step, the pH of addition alkali lye such as ammoniacal liquor adjustment lotion is between 3.5~4.0.
As a preferred embodiment, the chip, temperature are cleaned with deionized water after the first acid pickling step
About 60 degree, when a length of 2 minutes, with remove wafer surface residual lotion.
Specifically, in the second acid pickling step, it is 1 that chip is placed in hydrofluoric acid and the ratio of water：99 dilute hydrogen
Cleaning in fluoric acid (DHF), to remove the native oxide of wafer surface.DHF inhibits oxide-film simultaneously
Formation, therefore can easily remove the Al of wafer surface, the metal, DHF such as Fe, Zn, Ni
The metal hydroxides being attached in native oxide can be removed.When being cleaned with DHF, in native oxide
When being corroded, wafer surface will not be corroded.To ensure cleaning performance, adopted after diluted hydrofluoric acid cleaning
Cleaned with deionized water.DHF can remove the natural oxide film of silicon chip surface, therefore, it is attached to primary oxygen
Metal on change layer will be dissolved in cleaning fluid.
Finally, chip is dried treatment, for example, can be taken away the moisture of chip using dry nitrogen.
In sum, the present invention carries out degumming process to chip by using isopropanol, molten using amidosulphuric acid
Liquid, citric acid solution is cleaned, and is cleaned using DHF, so as to effectively clean having for wafer surface
Machine thing, metal oxide, particulate etc., are suitable to industrial extensive use.And, in first time pickling
Ammoniacal liquor is added in journey carries out pH value regulation, so as to be conducive to second carrying out of acid pickling step.
Above disclosed is only presently preferred embodiments of the present invention, can not limit the present invention with this certainly
Interest field, therefore equivalent variations made according to scope of the present invention patent still belong to the present invention and are covered
Scope.
Claims (9)
1. a kind of cleaning method of semiconductor wafer, comprises the following steps：
Degumming step：Add isopropanol cleaning；
First acid pickling step：Add the amidosulphuric acid solution that mass fraction is 0.1%~0.2%, wash cycles the
One scheduled duration；The citric acid solution that mass fraction is 0.1%~0.3% is added, the second scheduled duration is cleaned；
Second acid pickling step：The ratio for using hydrofluoric acid and water is 1：99 diluted hydrofluoric acid cleaning.
2. the cleaning method of semiconductor wafer as claimed in claim 1, it is characterised in that：In the degumming
Also include cleaning chip with deionized water before step.
3. the cleaning method of semiconductor wafer as claimed in claim 1, it is characterised in that：In the degumming
Also include cleaning chip with deionized water after step, before first acid pickling step.
4. the cleaning method of semiconductor wafer as claimed in claim 1, it is characterised in that：Described first
Also include cleaning chip with deionized water after acid pickling step, before second acid pickling step.
5. the cleaning method of semiconductor wafer as claimed in claim 1, it is characterised in that：Described second
Also include cleaning chip with deionized water after acid pickling step.
6. the cleaning method of semiconductor wafer as claimed in claim 5, it is characterised in that：Use deionized water
Also include the drying chip after cleaning chip.
7. the cleaning method of semiconductor wafer as claimed in claim 1, it is characterised in that：First acid
Wash in step, first scheduled duration is 1~3 hour, and the temperature control of the amidosulphuric acid solution exists
40~50 degree.
8. the cleaning method of semiconductor wafer as claimed in claim 7, it is characterised in that：Described second is pre-
Regularly a length of 0.5~1 hour, and add the pH that alkali lye adjusts the citric acid solution to control 3.5~4.0.
9. the cleaning method of semiconductor wafer as claimed in claim 8, it is characterised in that：The alkali lye is
Ammoniacal liquor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510821566.5A CN106783527A (en) | 2015-11-23 | 2015-11-23 | The cleaning method of semiconductor wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510821566.5A CN106783527A (en) | 2015-11-23 | 2015-11-23 | The cleaning method of semiconductor wafer |
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| Publication Number | Publication Date |
|---|---|
| CN106783527A true CN106783527A (en) | 2017-05-31 |
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ID=58964550
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510821566.5A Pending CN106783527A (en) | 2015-11-23 | 2015-11-23 | The cleaning method of semiconductor wafer |
Country Status (1)
| Country | Link |
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| CN (1) | CN106783527A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107993973A (en) * | 2017-11-23 | 2018-05-04 | 长江存储科技有限责任公司 | The preparation method of fleet plough groove isolation structure |
| CN108511316A (en) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | The cleaning method of semiconductor wafer |
| CN109427539A (en) * | 2017-08-25 | 2019-03-05 | 东莞新科技术研究开发有限公司 | The cleaning method of semiconductor element |
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| CN1216059A (en) * | 1997-01-21 | 1999-05-05 | 李起元 | Composition for cleaning and etching electronic display and substrate |
| CN1281588A (en) * | 1997-12-12 | 2001-01-24 | Memc电子材料有限公司 | Post-lapping cleaning process for silicon wafers |
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| WO2014157440A1 (en) * | 2013-03-27 | 2014-10-02 | 富士フイルム株式会社 | Laminate for temporary bonding in semiconductor device manufacture, and semiconductor device manufacturing method |
| CN104726881A (en) * | 2015-02-12 | 2015-06-24 | 国家电网公司 | Efficient environment-friendly chemical cleaning method |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
| CN105023841A (en) * | 2014-04-23 | 2015-11-04 | 沈阳芯源微电子设备有限公司 | Wafer surface metal stripping and photoresist removing method |
-
2015
- 2015-11-23 CN CN201510821566.5A patent/CN106783527A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1216059A (en) * | 1997-01-21 | 1999-05-05 | 李起元 | Composition for cleaning and etching electronic display and substrate |
| CN1281588A (en) * | 1997-12-12 | 2001-01-24 | Memc电子材料有限公司 | Post-lapping cleaning process for silicon wafers |
| CN1338771A (en) * | 2001-06-15 | 2002-03-06 | 旺宏电子股份有限公司 | Method for cleaning semiconductor wafer |
| WO2014157440A1 (en) * | 2013-03-27 | 2014-10-02 | 富士フイルム株式会社 | Laminate for temporary bonding in semiconductor device manufacture, and semiconductor device manufacturing method |
| CN105023841A (en) * | 2014-04-23 | 2015-11-04 | 沈阳芯源微电子设备有限公司 | Wafer surface metal stripping and photoresist removing method |
| CN104726881A (en) * | 2015-02-12 | 2015-06-24 | 国家电网公司 | Efficient environment-friendly chemical cleaning method |
| CN104952701A (en) * | 2015-05-13 | 2015-09-30 | 北京通美晶体技术有限公司 | Special-shaped semiconductor wafer and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108511316A (en) * | 2017-02-27 | 2018-09-07 | 东莞新科技术研究开发有限公司 | The cleaning method of semiconductor wafer |
| CN109427539A (en) * | 2017-08-25 | 2019-03-05 | 东莞新科技术研究开发有限公司 | The cleaning method of semiconductor element |
| CN107993973A (en) * | 2017-11-23 | 2018-05-04 | 长江存储科技有限责任公司 | The preparation method of fleet plough groove isolation structure |
| CN107993973B (en) * | 2017-11-23 | 2020-08-25 | 长江存储科技有限责任公司 | Preparation method of shallow trench isolation structure |
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Application publication date: 20170531 |