CN107338126A - A kind of water base microelectronics is peeled off and cleaning liquid composition - Google Patents
A kind of water base microelectronics is peeled off and cleaning liquid composition Download PDFInfo
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- CN107338126A CN107338126A CN201710488371.2A CN201710488371A CN107338126A CN 107338126 A CN107338126 A CN 107338126A CN 201710488371 A CN201710488371 A CN 201710488371A CN 107338126 A CN107338126 A CN 107338126A
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
- C11D1/835—Mixtures of non-ionic with cationic compounds
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/02—Inorganic compounds ; Elemental compounds
- C11D3/04—Water-soluble compounds
- C11D3/042—Acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/2003—Alcohols; Phenols
- C11D3/2065—Polyhydric alcohols
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/20—Organic compounds containing oxygen
- C11D3/22—Carbohydrates or derivatives thereof
- C11D3/221—Mono, di- or trisaccharides or derivatives thereof
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/26—Organic compounds containing nitrogen
- C11D3/33—Amino carboxylic acids
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- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
- C11D3/16—Organic compounds
- C11D3/36—Organic compounds containing phosphorus
- C11D3/364—Organic compounds containing phosphorus containing nitrogen
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/38—Cationic compounds
- C11D1/62—Quaternary ammonium compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D1/00—Detergent compositions based essentially on surface-active compounds; Use of these compounds as a detergent
- C11D1/66—Non-ionic compounds
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Abstract
The present invention relates to a kind of water base microelectronics stripping and cleaning liquid composition, including water, organic quaternary ammonium compound, hydrogen peroxide, stabilizer, corrosion inhibitor, chelating agent, the specifically used method of this composition is also provided simultaneously, composition of the present invention does not contain azanol, fluoride, reducing agent, organic solvent, abrasive grains, after effectively removing dry etching（post‑etch）After ashing（post‑ash）Metal wire（metal line）, through hole（via）And pad（pad）Deng resist residue and post-etch residues on wafer.Attack will not be produced to substrate simultaneously or causes to corrode.And water base microelectronics of the present invention is peeled off and cleaning liquid composition operation temperature is relatively low, energy consumption is less, can directly be rinsed with water, and due to that will not cause to corrode to metal especially aluminium, safety and environmental protection, effectively reduces cleaning cost.
Description
Technical field
The present invention relates to chemicals field, is specifically that one kind is used to peeling off and removing microelectronic substation photoresist, photoetching
The water-base cleaning liquid composition and application method of glue residue and post-etch residues.
Background technology
In Al or Al（Cu）The back segment of base metallization（back-end of line）In microelectronic component preparation process,
One essential step is exactly to deposit photoresist film on the wafer substrate, is then used as mask using photoresist（Mask）Shape
Into circuit pattern, after overbaking, development, then resulting pattern is shifted via reactive plasma etching gas
To underlying substrate material（Electrolyte or metal level）.The etching substrate of etching gas meeting selectivity is not photo-etched the area of glue protection
Domain, and mainly have metal wire via formed structure is etched（metal line）, pad（pad）And through hole（via）.Etching
Gas is usually the gas containing halogen, in plasma etch process, due to plasma gas, etching base material and
The interaction of photoresist, in the side wall or surrounding formation etch residue of etching substrate while photoresist can be will also result in and covered
The crosslinking of membrane material, and then be more difficult to remove.
After etching process completion, the residue after photoresist mask and etching must remove from chip, so as to
Carry out the operation of next step.By chemical stripping solution or Oxygen plasma ashing method can be passed through（ash）Remove most of light
Photoresist.Residue after above-mentioned etching usually contains the metallic residue of high slightly solubility, and common chemical stripping solvent is difficult to clean off.
Meanwhile in podzolic process, above-mentioned metallic residue can be further oxidized, and it is more difficult to clean off.Therefore one kind is needed
Cleaning fluid can remove and the residue in various substrates is produced in etching process, and the cleaning fluid can not corrode these again simultaneously
Base material such as aluminium, aluminium/silicon/copper, titanium, titanium nitride, titanium/tungsten, tungsten, silica, polysilicon etc..The cleaning fluid can also remove simultaneously
The resist residue not being ashed.
Current, typical Al bases back segment cleaning fluid mainly includes following several：Azanol based cleaning liquid, fluorine class cleaning
Liquid, half water base amine cleaning fluid（Without azanol）And aqueous cleaning agent.
EKC265, EKC270 and EKC270T and ACT915, ACT927, ACT930 and ACT940 are typical azanol classes
Cleaning fluid, and most Al base back segment cleaning fluids currently.The composition of azanol based cleaning liquid mainly includes machine amine, hydroxyl
Amine, water and corrosion inhibiter and stabilizer catechol etc..Exemplary patents corresponding to azanol based cleaning liquid have US5279771,
US5911835, US6187730, US5988186, US5419779, EP0656405A2, US6951710 etc..Azanol based cleaning liquid
The advantages of be to be capable of the very effective inorganic residues and organic remains for removing various indissolubles.But azanol class cleaning agent
Operation temperature generally will be 65oMore than C, and azanol is highly unstable, the danger for having blast under higher operating temperatures.Together
When higher operation temperature can cause the volatilization of fast decoupled and moisture that system forms so that the tank liquor of azanol based cleaning liquid
Life-span（life time）Generally only 1000 minutes or so, it is necessary to constantly fluid infusion maintain bath life.In addition, chip passes through
Azanol cleaning fluid processing after, it is necessary to IPA or NMP organic solvents be used as among rinse, then could deionized water rinsing, to keep away
Exempt from that crystal column surface metal is caused to corrode, so as to also increase wafer manufacturing cost.
The cleaning fluid of typical fluorinated mainly has ELM C30, ACT@NE series, EKC6800 series and ideal
clean 960（SP）Deng.The composition of fluorine-containing based cleaning liquid mainly includes fluoride, organic stripping solvent, water, metal erosion suppression
Agent and cushioning liquid etc..The Exemplary patents of fluorine-containing based cleaning liquid include US5279771, US5630904, WO2012171324,
US20020037820, US2003022800A, US20130237469A, US2003148910A1 etc..The cleaning of current fluorinated
Liquid easily causes channel characteristics size after on the one hand still having the corrosion that can not control base material well, or even cleaning
Change.On the other hand it is exactly incompatible, the higher corruption to quartz substrate of operation temperature of fluorine-containing based cleaning liquid and quartz substrate
Erosion is more serious, and the wet clean equipment of some current Semiconductor enterprises is made up of quartz.Thus limit fluorine-containing based cleaning liquid
Widely use.
Azanol based cleaning liquid and fluorine-containing based cleaning liquid are that current Al bases back segment cleans most commonly used two kinds of cleaning fluids.Except this
Outside, also half water base amine cleaning agent（Without azanol）And water-base cleaning liquid.Typical half water base amine cleaning fluid has
ALEG310, ALEG380, ST26S and ACT970 etc..The Exemplary patents of half water base amine cleaning fluid have US2003130146,
WO2006023061A etc..Its composition consists predominantly of machine amine, organic stripping solvent, water and metal corrosion inhibitor etc..Half water
The operating temperature range of base amine cleaning agent is wider, generally in 50-90oC.Compared with azanol class cleaning agent, such cleaning agent pair
The particularly rich titanium metalloid residue removal effect of inorganic metallic residue is poor, currently also without widely use.
The water-base cleaning liquid of low-temperature environment-friendly is following developing direction of semiconductor cleaning agent, and Baker REZI 38 are a
Compatible Al（Cu）The water-base cleaning liquid of substrate, corresponding patent are US2010035786, its form be non-metallic ion alkali, silicon
Hydrochlorate corrosion inhibitor, oxometallate, chelating agent and water.The inhibition mechanism of silicates corrosion inhibitor is that silicate passes through
Hydrolyze and the multimolecule films of chemical bonding are formed on the surface of substrate, cleaning is difficult to the film for being bonded surface chemistry after completing
Remove, the discoloration and pollution of some substrates can be caused, in addition, silicates corrosion inhibitor ability in strong alkaline aqueous solution
It is stabilized, in water-washing process after the washing, because system pH is gradually gradually lowered to 7 or so from 11 even more highs, meeting
Cause silicates corrosion inhibitor to be hydrolyzed into small particle, pollute wafer.
The content of the invention
The technical problem to be solved in the present invention be for azanol source in traditional based cleaning liquid containing azanol is single, explosive,
It is expensive, and the fluorine-containing based cleaning liquid of tradition is incompatible with quartzy equipment in wet-cleaning, and some current aqueous-base cleanings
Secondary pollution problems after the washing be present in liquid, there is provided one kind have to resist residue cleaning performance it is good, to metal with
Non-metallic metal does not corrode, and secondary pollution will not be caused in cleaning process can peel off and remove microelectronic substation photoetching
Glue, resist residue, the water-base cleaning liquid of post-etch residues.
The present invention adopts the following technical scheme that.
A kind of water base microelectronics is peeled off and cleaning liquid composition, including water, organic quaternary ammonium compound, hydrogen peroxide, stably
Agent, corrosion inhibitor, chelating agent, it is characterised in that each component mass percent such as meets following condition：Water 60-98%, You Jiji
Ammonium compounds 0.1-10%, hydrogen peroxidase 10 .1-25%, stabilizer 0.01-10%, corrosion inhibitor 0.01-15%, chelating agent 0.01-
10%.The each component mass percent is preferably as follows the preferred 70-95% of scope water, the preferred 0.5-7% of quaternary organic ammonium compounds, mistake
The preferred 0.5-15% of hydrogen oxide, the preferred 0.1-8% of stabilizer, the preferred 0.1-10% of corrosion inhibitor, the preferred 0.1-8% of chelating agent.Institute
It is deionized water to state water.The quaternary organic ammonium compounds are selected from TMAH, ethoxy trimethylammonium hydroxide four
Ethyl ammonium hydroxide, TPAOH, TBAH, cetyltrimethylammonium hydroxide and benzyl trimethyl
One or more in ammonium hydroxide, wherein it is preferred that TMAH, one kind in ethoxy trimethylammonium hydroxide or
Its mixture.The hydrogen peroxide is 30-35% super-clean high-pure electronic grade hydrogen peroxide, and metal ion content is less than 1ppb.Institute
State stabilizer and be selected from heteropoly acid and its salt, the heteropoly acid and its salt are selected from phosphomolybdic acid, phosphotungstic acid, phosphorus vanadic acid, ammonium molybdate, wolframic acid
One or more in ammonium, silico-tungstic acid, silicomolybdic acid, ammonium metatungstate, borotungstic acid, borotungstic acid ammonium.The corrosion inhibitor preferably is selected from
Glucose, mannose, arabinose, erythrose, fructose, galactolipin, ribose, deoxyribose, xylose, mannitol, xylitol,
One or more in D-sorbite.The chelating agent is amion acetic acid, iminodiacetic acid, ethylenediamine tetra-acetic acid, trans ring
Hexamethylene tetraacetic acid, ATMP, hexapotassium, diethylene triamine pentamethylene phosphonic, hydroxy ethylidene two
One or more in phosphonic acids.
The present invention also provides the specifically used method of this composition.
A kind of water base microelectronics is peeled off and cleaning liquid composition application method, it is characterised in that first by extra fine quality percentage
Component is sequentially added in container, and is mixed together in a reservoir untill all components are all dissolved as settled solution, then
After soaking the suitable time at 25 DEG C to 50 DEG C from slot type cleaning or SCM type cleaning, direct deionization rinsing is taken out,
Then dried up afterwards with high pure nitrogen.The water base microelectronics peel off and cleaning liquid composition can matching surface activating agent make
With the preferred fluorine carbon nonionic surfactant of surfactant, the dosage of the surfactant is preferably 0.001-8%, more
Preferably 0.01-5%.
A kind of water base microelectronics of the present invention is peeled off and cleaning liquid composition does not contain azanol, fluoride, reducing agent, had
Solvent, abrasive grains.Wherein, the mechanism of the stabilizer stable peroxide hydrogen is as follows：
Wherein X=P, Si, G, As ...；M=Mo, W, V.Its heteropoly acid can form the miscellaneous more complex compounds of peroxidating, drop with hydrogen peroxide
Low hydrogen peroxide decomposes in system concentration, reduction.
The surfactant used joined together by water base microelectronics stripping of the present invention and cleaning liquid composition can select
As E.I.Du Pont Company provide Zonyl UR, Zonyl FSO-100, Zonyl FSN-100 and 3M companies provide FC4430,
FC4432, and Shuangzi nonionic surfactant, such as 2,4,7,9- tetramethyl -5- decine -4,7- glycol and 4,7- dimethyl -
5- decine -4,7- glycol.
A kind of water base microelectronics of the present invention is peeled off after removing dry etching with cleaning liquid composition（post-etch）
After ashing（post-ash）Metal wire（metal line）, through hole（via）And pad（pad）It is remaining Deng photoresist on wafer
Thing and post-etch residues.The substrate containing materials such as aluminium, aluminium/copper, titanium, titanium nitride, tungsten, tantalum, silica will not be produced simultaneously
Raw attack causes to corrode.
The positive effect of the present invention is：
（1）The water base microelectronics of the present invention for being used to removing photoetching glue residue during micro-electronic manufacturing is peeled off and cleaning
Liquid composition, operation temperature is relatively low, and energy consumption is less, can directly be rinsed with water, and due to will not be made to metal especially aluminium
Into corrosion, safety and environmental protection, cleaning cost is effectively reduced.
（2）Water base microelectronics of the present invention is peeled off and employs effective stabilizer in cleaning liquid composition formula,
Enhance the stability and service life of hydrogen peroxide.
（3）The corrosion inhibitor component that water base microelectronics of the present invention is peeled off and cleaning liquid composition formula uses,
Very effective metallic substrates can be protected not corroded, while be easy to wash, the secondary pollution of wafer will not be caused.
Embodiment
Advantages of the present invention is expanded on further below by specific embodiment, but protection scope of the present invention is not only limited to
In following embodiments.
The component and content of the embodiment of table 1 and comparative example cleaning fluid
In order to further investigate the cleaning situation of the cleaning fluid, present invention employs following technological means：I.e. by semiconductor crystal wafer
Such as metal wire, through hole and metal gasket（Including ashing and non-cineration technics）3cm*3cm small pieces are respectively cut into, are then immersed in
5-30 minutes are soaked in 100mL cleaning fluids at 25 DEG C to 50 scopes DEG C, High Purity Nitrogen air-blowing is then used after deionized water rinses
It is dry.Cleaning test can also be carried out using single-chip microcomputer.Corrosion feelings of the cleaning performance and cleaning fluid of photoetching glue residue to chip
Condition is as shown in table 2：
Show from table 2：The cleaning liquid energy of the present invention effectively removes wafer, such as metal wire, Metal；Through hole, Via；Metal gasket,
Pad photoresist and photoetching glue residue, while it is larger not corrode metal and non metallic substrate, action pane on wafer.From right
If preferably it can not only be removed in ratio 1 and embodiment 2 as can be seen that not containing hydrogen peroxide in formula in side wall
Polymer, corrosion substrate that can also be apparent.In the basic conditions, hydrogen peroxide, which can effectively strengthen, removes wafer side wall richness
Titanium, Silicon-rich and fluorine-containing polymer.As can be seen that not containing corrosion inhibitor or mistake from comparative example 2,3 and embodiment 2
The stabilizer of hydrogen oxide, it can all cause the corrosion of wafer substrate.
To sum up, positive effect of the invention is：The very effective removal wafer of aqueous-base cleaning liquid energy of the present invention
On photoresist and resist residue, while do not corrode wafer substrate.The water-base cleaning liquid operation temperature is low, action pane
Greatly, safety and environmental protection, had a good application prospect in fields such as semiconductor crystal wafer cleanings.
It should be appreciated that wt% of the present invention refers to weight/mass percentage composition.
The specific embodiment of the present invention is described in detail above, but it is intended only as example, it is of the invention and unlimited
It is formed on particular embodiments described above.To those skilled in the art, it is any to the equivalent modifications that carry out of the present invention and
Substitute also all among scope of the invention.Therefore, the impartial conversion made without departing from the spirit and scope of the invention and
Modification, all should be contained within the scope of the invention.
Claims (10)
1. a kind of water base microelectronics is peeled off and cleaning liquid composition, including water, organic quaternary ammonium compound, hydrogen peroxide, stabilizer,
Corrosion inhibitor, chelating agent, it is characterised in that each component mass percent such as meets following condition：Water 60-98%, organic quaternary ammonium
Compound 0.1-10%, hydrogen peroxidase 10 .1-25%, stabilizer 0.01-10%, corrosion inhibitor 0.01-15%, chelating agent 0.01-
10%。
2. a kind of water base microelectronics stripping and cleaning liquid composition according to claim 1, it is characterised in that each component
Mass percent is preferably as follows the preferred 70-95% of scope water, the preferred 0.5-7% of quaternary organic ammonium compounds, the preferred 0.5- of hydrogen peroxide
15%th, the preferred 0.1-8% of stabilizer, the preferred 0.1-10% of corrosion inhibitor, the preferred 0.1-8% of chelating agent.
3. a kind of water base microelectronics stripping and cleaning liquid composition according to claim 1, it is characterised in that the water is to go
Ionized water.
4. a kind of water base microelectronics stripping and cleaning liquid composition according to claim 1, it is characterised in that organic season
Ammonium compounds is selected from TMAH, ethoxy trimethylammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl hydroxide
One or more in ammonium, TBAH, cetyltrimethylammonium hydroxide and benzyltrimethylammonium hydroxide, its
In preferably TMAH, one kind in ethoxy trimethylammonium hydroxide or its mixture.
5. a kind of water base microelectronics stripping and cleaning liquid composition according to claim 1, it is characterised in that the peroxidating
Hydrogen is 30-35% super-clean high-pure electronic grade hydrogen peroxide, and metal ion content is less than 1ppb.
6. a kind of water base microelectronics stripping and cleaning liquid composition according to claim 1, it is characterised in that the stabilizer
Selected from heteropoly acid and its salt, the heteropoly acid and its salt are selected from phosphomolybdic acid, phosphotungstic acid, phosphorus vanadic acid, ammonium molybdate, ammonium tungstate, silicon tungsten
One or more in acid, silicomolybdic acid, ammonium metatungstate, borotungstic acid, borotungstic acid ammonium.
7. a kind of water base microelectronics stripping and cleaning liquid composition according to claim 1, it is characterised in that the corrosion suppression
Preparation preferably is selected from glucose, mannose, arabinose, erythrose, fructose, galactolipin, ribose, deoxyribose, xylose, mannose
One or more in alcohol, xylitol, D-sorbite.
8. the chelating agent is amion acetic acid, iminodiacetic acid, ethylenediamine tetra-acetic acid, trans cvclohexvl ethylenediamine tetraacetic acid (EDTA), amino
One kind or several in three methylenephosphonic acids, hexapotassium, diethylene triamine pentamethylene phosphonic, 1-hydroxy ethylidene-1,1-diphosphonic acid
Kind.
9. a kind of water base microelectronics is peeled off and cleaning liquid composition application method, it is characterised in that first by extra fine quality percentage group
Part is sequentially added in container, and is mixed together in a reservoir untill all components are all dissolved as settled solution, Ran Houxuan
After slot type cleans or SCM type cleaning soaks the suitable time at 25 DEG C to 50 DEG C, direct deionization rinsing is taken out, so
Dried up afterwards with high pure nitrogen.
10. a kind of water base microelectronics stripping and cleaning liquid composition according to claim 9, it is characterised in that described water base micro-
Electron detachment and cleaning liquid composition can matching surface activating agent use, the preferred fluorine carbon non-ionic surface active of surfactant
Agent, the dosage of the surfactant is preferably 0.001-8%, more preferably 0.01-5%.
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108962723A (en) * | 2018-07-13 | 2018-12-07 | 安徽建筑大学 | A kind of water base microelectronics removing cleaning combination agent |
| CN111484908A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Photoetching plate cleaning agent and use method thereof |
| CN111979546A (en) * | 2020-08-19 | 2020-11-24 | 江苏科林泰电子有限公司 | Effective stripping cleaning agent for metal magnesium and silver |
| CN114276814A (en) * | 2021-12-15 | 2022-04-05 | 湖北兴福电子材料有限公司 | Cleaning fluid for silicon wafer etching |
| CN114854507A (en) * | 2022-03-31 | 2022-08-05 | 浙江奥首材料科技有限公司 | Acidic ionic liquid, cleaning agent containing acidic ionic liquid and semiconductor substrate cleaning method |
| CN117747414A (en) * | 2024-02-19 | 2024-03-22 | 中国科学院长春光学精密机械与物理研究所 | Method for cleaning semiconductor wafer substrate |
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| CN108962723A (en) * | 2018-07-13 | 2018-12-07 | 安徽建筑大学 | A kind of water base microelectronics removing cleaning combination agent |
| CN108962723B (en) * | 2018-07-13 | 2021-07-13 | 安徽建筑大学 | Water-based microelectronic stripping and cleaning composition |
| CN111484908A (en) * | 2019-01-29 | 2020-08-04 | 山东浪潮华光光电子股份有限公司 | Photoetching plate cleaning agent and use method thereof |
| CN111979546A (en) * | 2020-08-19 | 2020-11-24 | 江苏科林泰电子有限公司 | Effective stripping cleaning agent for metal magnesium and silver |
| CN114276814A (en) * | 2021-12-15 | 2022-04-05 | 湖北兴福电子材料有限公司 | Cleaning fluid for silicon wafer etching |
| CN114854507A (en) * | 2022-03-31 | 2022-08-05 | 浙江奥首材料科技有限公司 | Acidic ionic liquid, cleaning agent containing acidic ionic liquid and semiconductor substrate cleaning method |
| CN117747414A (en) * | 2024-02-19 | 2024-03-22 | 中国科学院长春光学精密机械与物理研究所 | Method for cleaning semiconductor wafer substrate |
| CN117747414B (en) * | 2024-02-19 | 2024-04-23 | 中国科学院长春光学精密机械与物理研究所 | Method for cleaning semiconductor wafer substrate |
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