CN108962723B - Water-based microelectronic stripping and cleaning composition - Google Patents
Water-based microelectronic stripping and cleaning composition Download PDFInfo
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- CN108962723B CN108962723B CN201810771473.XA CN201810771473A CN108962723B CN 108962723 B CN108962723 B CN 108962723B CN 201810771473 A CN201810771473 A CN 201810771473A CN 108962723 B CN108962723 B CN 108962723B
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- 238000004140 cleaning Methods 0.000 title claims abstract description 60
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 239000000203 mixture Substances 0.000 title claims abstract description 36
- 238000004377 microelectronic Methods 0.000 title claims abstract description 17
- 239000007788 liquid Substances 0.000 claims abstract description 86
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 50
- LCPVQAHEFVXVKT-UHFFFAOYSA-N 2-(2,4-difluorophenoxy)pyridin-3-amine Chemical compound NC1=CC=CN=C1OC1=CC=C(F)C=C1F LCPVQAHEFVXVKT-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000005260 corrosion Methods 0.000 claims abstract description 28
- 230000007797 corrosion Effects 0.000 claims abstract description 28
- CHQMHPLRPQMAMX-UHFFFAOYSA-L sodium persulfate Substances [Na+].[Na+].[O-]S(=O)(=O)OOS([O-])(=O)=O CHQMHPLRPQMAMX-UHFFFAOYSA-L 0.000 claims abstract description 28
- 239000002798 polar solvent Substances 0.000 claims abstract description 25
- 239000008367 deionised water Substances 0.000 claims abstract description 22
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 22
- 239000003112 inhibitor Substances 0.000 claims abstract description 19
- 239000000243 solution Substances 0.000 claims description 50
- 229910052751 metal Inorganic materials 0.000 claims description 33
- 239000002184 metal Substances 0.000 claims description 33
- 238000005530 etching Methods 0.000 claims description 23
- 238000003756 stirring Methods 0.000 claims description 22
- 229920000642 polymer Polymers 0.000 claims description 21
- DMEGYFMYUHOHGS-UHFFFAOYSA-N cycloheptane Chemical compound C1CCCCCC1 DMEGYFMYUHOHGS-UHFFFAOYSA-N 0.000 claims description 12
- 239000011259 mixed solution Substances 0.000 claims description 11
- 239000003795 chemical substances by application Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 7
- 238000002360 preparation method Methods 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 7
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 claims description 6
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 claims description 6
- SRBFZHDQGSBBOR-IOVATXLUSA-N D-xylopyranose Chemical compound O[C@@H]1COC(O)[C@H](O)[C@H]1O SRBFZHDQGSBBOR-IOVATXLUSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- WQZGKKKJIJFFOK-GASJEMHNSA-N Glucose Natural products OC[C@H]1OC(O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-GASJEMHNSA-N 0.000 claims description 6
- PYMYPHUHKUWMLA-UHFFFAOYSA-N arabinose Natural products OCC(O)C(O)C(O)C=O PYMYPHUHKUWMLA-UHFFFAOYSA-N 0.000 claims description 6
- SRBFZHDQGSBBOR-UHFFFAOYSA-N beta-D-Pyranose-Lyxose Natural products OC1COC(O)C(O)C1O SRBFZHDQGSBBOR-UHFFFAOYSA-N 0.000 claims description 6
- NNBZCPXTIHJBJL-UHFFFAOYSA-N decalin Chemical compound C1CCCC2CCCCC21 NNBZCPXTIHJBJL-UHFFFAOYSA-N 0.000 claims description 6
- 239000008103 glucose Substances 0.000 claims description 6
- 239000000600 sorbitol Substances 0.000 claims description 6
- 235000010356 sorbitol Nutrition 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 238000001291 vacuum drying Methods 0.000 claims description 6
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 claims description 5
- AVXURJPOCDRRFD-UHFFFAOYSA-N Hydroxylamine Chemical compound ON AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims description 5
- WQZGKKKJIJFFOK-VFUOTHLCSA-N beta-D-glucose Chemical compound OC[C@H]1O[C@@H](O)[C@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-VFUOTHLCSA-N 0.000 claims description 5
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims description 5
- 150000001924 cycloalkanes Chemical class 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 239000005457 ice water Substances 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 239000013522 chelant Substances 0.000 claims description 4
- 239000002131 composite material Substances 0.000 claims description 4
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- ASJSAQIRZKANQN-CRCLSJGQSA-N 2-deoxy-D-ribose Chemical compound OC[C@@H](O)[C@@H](O)CC=O ASJSAQIRZKANQN-CRCLSJGQSA-N 0.000 claims description 3
- 241000746375 Andrographis Species 0.000 claims description 3
- YTBSYETUWUMLBZ-UHFFFAOYSA-N D-Erythrose Natural products OCC(O)C(O)C=O YTBSYETUWUMLBZ-UHFFFAOYSA-N 0.000 claims description 3
- FBPFZTCFMRRESA-KVTDHHQDSA-N D-Mannitol Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-KVTDHHQDSA-N 0.000 claims description 3
- YTBSYETUWUMLBZ-IUYQGCFVSA-N D-erythrose Chemical compound OC[C@@H](O)[C@@H](O)C=O YTBSYETUWUMLBZ-IUYQGCFVSA-N 0.000 claims description 3
- WQZGKKKJIJFFOK-QTVWNMPRSA-N D-mannopyranose Chemical compound OC[C@H]1OC(O)[C@@H](O)[C@@H](O)[C@@H]1O WQZGKKKJIJFFOK-QTVWNMPRSA-N 0.000 claims description 3
- HMFHBZSHGGEWLO-SOOFDHNKSA-N D-ribofuranose Chemical compound OC[C@H]1OC(O)[C@H](O)[C@@H]1O HMFHBZSHGGEWLO-SOOFDHNKSA-N 0.000 claims description 3
- 206010056474 Erythrosis Diseases 0.000 claims description 3
- 229930091371 Fructose Natural products 0.000 claims description 3
- RFSUNEUAIZKAJO-ARQDHWQXSA-N Fructose Chemical compound OC[C@H]1O[C@](O)(CO)[C@@H](O)[C@@H]1O RFSUNEUAIZKAJO-ARQDHWQXSA-N 0.000 claims description 3
- 239000005715 Fructose Substances 0.000 claims description 3
- 229930195725 Mannitol Natural products 0.000 claims description 3
- PYMYPHUHKUWMLA-LMVFSUKVSA-N Ribose Natural products OC[C@@H](O)[C@@H](O)[C@@H](O)C=O PYMYPHUHKUWMLA-LMVFSUKVSA-N 0.000 claims description 3
- PMZURENOXWZQFD-UHFFFAOYSA-L Sodium Sulfate Chemical compound [Na+].[Na+].[O-]S([O-])(=O)=O PMZURENOXWZQFD-UHFFFAOYSA-L 0.000 claims description 3
- TVXBFESIOXBWNM-UHFFFAOYSA-N Xylitol Natural products OCCC(O)C(O)C(O)CCO TVXBFESIOXBWNM-UHFFFAOYSA-N 0.000 claims description 3
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 3
- HMFHBZSHGGEWLO-UHFFFAOYSA-N alpha-D-Furanose-Ribose Natural products OCC1OC(O)C(O)C1O HMFHBZSHGGEWLO-UHFFFAOYSA-N 0.000 claims description 3
- WQZGKKKJIJFFOK-PHYPRBDBSA-N alpha-D-galactose Chemical compound OC[C@H]1O[C@H](O)[C@H](O)[C@@H](O)[C@H]1O WQZGKKKJIJFFOK-PHYPRBDBSA-N 0.000 claims description 3
- PYMYPHUHKUWMLA-WDCZJNDASA-N arabinose Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)C=O PYMYPHUHKUWMLA-WDCZJNDASA-N 0.000 claims description 3
- 125000004432 carbon atom Chemical group C* 0.000 claims description 3
- LMGZGXSXHCMSAA-UHFFFAOYSA-N cyclodecane Chemical compound C1CCCCCCCCC1 LMGZGXSXHCMSAA-UHFFFAOYSA-N 0.000 claims description 3
- WJTCGQSWYFHTAC-UHFFFAOYSA-N cyclooctane Chemical compound C1CCCCCCC1 WJTCGQSWYFHTAC-UHFFFAOYSA-N 0.000 claims description 3
- 239000004914 cyclooctane Substances 0.000 claims description 3
- 229930182830 galactose Natural products 0.000 claims description 3
- 239000000594 mannitol Substances 0.000 claims description 3
- 235000010355 mannitol Nutrition 0.000 claims description 3
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052938 sodium sulfate Inorganic materials 0.000 claims description 3
- 235000011152 sodium sulphate Nutrition 0.000 claims description 3
- 238000000967 suction filtration Methods 0.000 claims description 3
- PXXNTAGJWPJAGM-UHFFFAOYSA-N vertaline Natural products C1C2C=3C=C(OC)C(OC)=CC=3OC(C=C3)=CC=C3CCC(=O)OC1CC1N2CCCC1 PXXNTAGJWPJAGM-UHFFFAOYSA-N 0.000 claims description 3
- 239000000811 xylitol Substances 0.000 claims description 3
- 235000010447 xylitol Nutrition 0.000 claims description 3
- HEBKCHPVOIAQTA-SCDXWVJYSA-N xylitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)CO HEBKCHPVOIAQTA-SCDXWVJYSA-N 0.000 claims description 3
- 229960002675 xylitol Drugs 0.000 claims description 3
- 239000000758 substrate Substances 0.000 abstract description 13
- 230000007613 environmental effect Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 abstract description 5
- 230000002776 aggregation Effects 0.000 abstract description 4
- 238000004220 aggregation Methods 0.000 abstract description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000007789 gas Substances 0.000 description 5
- 239000002244 precipitate Substances 0.000 description 5
- 239000012459 cleaning agent Substances 0.000 description 4
- 238000001259 photo etching Methods 0.000 description 3
- 238000004380 ashing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000003921 oil Substances 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Detergent Compositions (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention discloses a water-based microelectronic stripping and cleaning composition, which comprises deionized water, DuPont EKC stripping liquid, Asiatic blue ACT940 stripping liquid, STRIPPER N311 stripping liquid, an aggregation idealclean960 cleaning liquid, hydrogen peroxide, sodium persulfate, a polar solvent and a corrosion inhibitor, wherein the composition comprises the following components in parts by weight: 75-85 parts of deionized water, 8-12 parts of Dupont EKC stripping liquid, 6-10 parts of Islamic ACT940 stripping liquid, 2-6 parts of STRIPPER N311 stripping liquid, 3-6 parts of an Anderaglelclean 960 cleaning solution, 5-9 parts of hydrogen peroxide, 4-7 parts of sodium persulfate, 5-10 parts of polar solvent and 2-5 parts of corrosion inhibitor. The invention has the characteristics of low operation temperature, effective stripping, no corrosion to the substrate, direct rinsing by water, safety, environmental protection and cleaning cost reduction.
Description
Technical Field
The invention relates to a water-based microelectronic stripping and cleaning composition, in particular to a water-based microelectronic stripping and cleaning composition which has the advantages of low operation temperature, effective stripping, no corrosion to a substrate, direct rinsing by water, safety, environmental protection and cleaning cost reduction.
Background
In the fabrication of back-end microelectronic devices with Al or Al (cu) metalized substrates, an essential step is to deposit a photoresist film on a wafer substrate, then form a circuit pattern with the photoresist as a Mask, bake, develop, and then transfer the resulting pattern to the underlying substrate material (electrolyte or metal layer) via reactive plasma etching gases. The etching gas selectively etches regions of the substrate not protected by the photoresist, and the structure formed by etching mainly includes metal lines (metal), bond pads (pad), and vias (via). The etching gas is usually a gas containing halogen, and during the plasma etching process, due to the interaction of the plasma gas, the etching substrate material and the photoresist, etching residues are formed on the sidewall or the periphery of the etching substrate, and at the same time, the photoresist mask material is crosslinked, so that the photoresist mask material is more difficult to remove.
After the etching process is complete, the photoresist mask and post-etch residue must be removed from the wafer for further processing. Most of the photoresist may be removed by a chemical stripping solution or by an oxygen plasma ashing method (ash). The residues after etching usually contain highly insoluble metal residues, which are difficult to remove by common chemical stripping solvents. Meanwhile, in the ashing process, the metal residues are further oxidized, so that the metal residues are more difficult to remove. Therefore, there is a need for a cleaning solution that can remove residues on various substrates generated during etching, while not corroding such substrate materials as aluminum, aluminum/silicon/copper, titanium nitride, titanium/tungsten, silicon oxide, polysilicon, etc. The cleaning solution can also remove unashed photoresist residues.
Disclosure of Invention
The invention aims to provide a water-based microelectronic stripping and cleaning composition which has the advantages of low operation temperature, effective stripping, no corrosion to a substrate, direct rinsing by water, safety, environmental protection and cleaning cost reduction.
The purpose of the invention can be realized by the following technical scheme:
a water-based microelectronic stripping and cleaning composition is characterized by comprising deionized water, DuPont EKC stripping liquid, Asiatic blue ACT940 stripping liquid, STRIPPER N311 stripping liquid, an aggregation ideal elclean 960 cleaning liquid, hydrogen peroxide, sodium persulfate, a polar solvent and a corrosion inhibitor, wherein the composition comprises the following components in parts by weight: 75-85 parts of deionized water, 8-12 parts of Dupont EKC stripping liquid, 6-10 parts of Islamic ACT940 stripping liquid, 2-6 parts of STRIPPER N311 stripping liquid, 3-6 parts of an Andrographis and Idelclean 960 cleaning liquid, 5-9 parts of hydrogen peroxide, 4-7 parts of sodium persulfate, 5-10 parts of polar solvent and 2-5 parts of corrosion inhibitor;
the preparation method of the cleaning agent comprises the following steps:
firstly, adding hydrogen peroxide and an focused idealclean960 cleaning solution into deionized water, and stirring and mixing uniformly;
step two, heating the solution to 35-40 ℃, sequentially adding the Islamic ACT940 stripping liquid, and uniformly stirring for 30-50 min;
putting the solution into an ice-water bath, adding a DuPont EKC stripping solution and STRIPPER N311 stripping solution builder, and continuously stirring for 40-60min to disperse the mixture into a uniform mixed solution;
step four, restoring the solution to room temperature, adding a polar solvent, a corrosion inhibitor and sodium persulfate, continuously stirring for 60-90min, and dispersing into a uniform mixed solution;
the polar solvent comprises liquid aliphatic hydrocarbon containing 6-18 carbon atoms, cycloalkane such as any one or more of cyclohexane, cycloheptane, cyclooctane, cyclodecane, and decalin;
the corrosion inhibitor is one or more of glucose, mannose, arabinose, erythrose, fructose, galactose, ribose, deoxyribose, xylose, mannitol, xylitol and sorbitol;
the preparation method of the sodium persulfate comprises the following steps:
step S1, adding sodium sulfate into hydrogen peroxide with the concentration of 200-400g/L to prepare solution with the concentration of 100-300 g/L;
step S2, putting the solution into an oil bath pan, and keeping the temperature at 10-15 ℃; magnetically stirring for 30-45min at 500r/min under 200-;
and step S3, carrying out suction filtration on the solution, putting the solution into a vacuum drying oven, and carrying out vacuum drying for 5-10h at the temperature of 50-80 ℃ to obtain white loose sodium persulfate.
The invention provides a water-based microelectronic stripping and cleaning composition, which has the characteristics of low operation temperature, effective stripping, no corrosion to a substrate, direct rinsing by water, safety, environmental protection and cleaning cost reduction.
The invention has the beneficial effects that: STRIPPER N311 the stripping liquid can effectively remove organic residue and improve the cleaning effect on the rough surface; STRIPPER N311 the stripping liquid is used for removing the precipitate after the through hole etching engineering and the processes of photoetching stripping rework and the like;
the arrangement of ideal clean960 cleaning is mainly used for removing precipitates after aluminum wiring etching and stripping through holes and metal organic matters;
the mechanism of the polymer generated after the combined agent cleaning solution removes metal etching is as follows:
the ashlar ACT940 stripper, STRIPPER N311 stripper, hydroxylamine in the focused ideal delclean 960 combine with water to produce an alkaline material that chelates with the polymer and strips it from the metal sidewalls; the alkaline substance can generate micro-etching on the side wall of the metal wire; the stripped polymeric chelate is dissolved in the polar solvent in the composite agent;
after the benzenediol in the Islamic ACT940 stripping liquid and STRIPPER N311 stripping liquid is stripped from the metal wire, performing subsequent cleaning by an integrated ideal clean960 cleaning liquid;
the hydrogen peroxide, the sodium persulfate and the corrosion inhibitor reduce the corrosion effect of the deionized water on the metal;
the hydrogen fluoride in the composition reacts with the polymer to strip the polymer from the metal wire; the polymer is then dissolved in a polar solvent.
Detailed Description
The purpose of the invention can be realized by the following technical scheme:
a water-based microelectronic stripping and cleaning composition is characterized by comprising deionized water, DuPont EKC stripping liquid, Asiatic blue ACT940 stripping liquid, STRIPPER N311 stripping liquid, an aggregation ideal elclean 960 cleaning liquid, hydrogen peroxide, sodium persulfate, a polar solvent and a corrosion inhibitor, wherein the composition comprises the following components in parts by weight: 75-85 parts of deionized water, 8-12 parts of Dupont EKC stripping liquid, 6-10 parts of Islamic ACT940 stripping liquid, 2-6 parts of STRIPPER N311 stripping liquid, 3-6 parts of an Andrographis and Idelclean 960 cleaning liquid, 5-9 parts of hydrogen peroxide, 4-7 parts of sodium persulfate, 5-10 parts of polar solvent and 2-5 parts of corrosion inhibitor;
the preparation method of the cleaning agent comprises the following steps:
firstly, adding hydrogen peroxide and an focused idealclean960 cleaning solution into deionized water, and stirring and mixing uniformly;
step two, heating the solution to 35-40 ℃, sequentially adding the Islamic ACT940 stripping liquid, and uniformly stirring for 30-50 min;
putting the solution into an ice-water bath, adding a DuPont EKC stripping solution and STRIPPER N311 stripping solution builder, and continuously stirring for 40-60min to disperse the mixture into a uniform mixed solution;
step four, restoring the solution to room temperature, adding a polar solvent, a corrosion inhibitor and sodium persulfate, continuously stirring for 60-90min, and dispersing into a uniform mixed solution;
the polar solvent comprises liquid aliphatic hydrocarbon containing 6-18 carbon atoms, cycloalkane such as any one or more of cyclohexane, cycloheptane, cyclooctane, cyclodecane, and decalin;
the corrosion inhibitor is one or more of glucose, mannose, arabinose, erythrose, fructose, galactose, ribose, deoxyribose, xylose, mannitol, xylitol and sorbitol;
the preparation method of the sodium persulfate comprises the following steps:
step S1, adding sodium sulfate into hydrogen peroxide with the concentration of 200-400g/L to prepare solution with the concentration of 100-300 g/L;
step S2, putting the solution into an oil bath pan, and keeping the temperature at 10-15 ℃; magnetically stirring for 30-45min at 500r/min under 200-;
and step S3, carrying out suction filtration on the solution, putting the solution into a vacuum drying oven, and carrying out vacuum drying for 5-10h at the temperature of 50-80 ℃ to obtain white loose sodium persulfate.
The working principle of the invention is as follows:
deionized water, DuPont EKC stripping liquid, Islamic ACT940 stripping liquid, STRIPPER N311 stripping liquid, Andidealclean 960 cleaning liquid, hydrogen peroxide, sodium persulfate, polar solvent and corrosion inhibitor are mixed to form mixed solution;
the DuPont EKC stripping liquid is colorless transparent liquid, the main components of the DuPont EKC stripping liquid are polar solvent, ammonium fluoride, hydrofluoric acid and water, and the working temperature of the DuPont EKC stripping liquid is generally 23-28 ℃;
the Islamic ACT940 stripping liquid and the STRIPPER N311 stripping liquid are brown liquid and mainly contain hydroxylamine, alcohol, benzenediol and a polar solvent; the Islamic ACT940 stripping solution contains three amines, and STRIPPER N311 stripping solution can effectively remove organic residues and improve the cleaning effect on rough surfaces; STRIPPER N311 the stripping liquid is used for removing the sediment after the through hole etching engineering and the processes of photoetching stripping rework and the like, so as to effectively strip the polymer;
the arrangement of ideal clean960 cleaning is mainly used for removing precipitates after aluminum wiring etching and stripping through holes and metal organic matters;
the mechanism of the polymer generated after the combined agent cleaning solution removes metal etching is as follows:
the ashlar ACT940 stripper, STRIPPER N311 stripper, hydroxylamine in the focused ideal delclean 960 combine with water to produce an alkaline material that chelates with the polymer and strips it from the metal sidewalls; the alkaline substance can generate micro-etching on the side wall of the metal wire; the stripped polymeric chelate is dissolved in the polar solvent in the composite agent;
after the benzenediol in the Islamic ACT940 stripping liquid and STRIPPER N311 stripping liquid is stripped from the metal wire, performing subsequent cleaning by an integrated ideal clean960 cleaning liquid;
the hydrogen peroxide, the sodium persulfate and the corrosion inhibitor reduce the corrosion effect of the deionized water on the metal;
the hydrogen fluoride in the composition reacts with the polymer to strip the polymer from the metal wire; the polymer is then dissolved in a polar solvent;
after the DuPont EKC stripping liquid, the Islamic ACT940 stripping liquid and the STRIPPER N311 stripping liquid are mixed, the operating temperature of the combined agent is reduced; the invention is based on the water-based composition, can be directly rinsed by water after cleaning, is safe and environment-friendly, and simultaneously reduces the cleaning cost.
Example 1
A water-based microelectronic stripping and cleaning composition is characterized by comprising deionized water, DuPont EKC stripping liquid, Asiatic blue ACT940 stripping liquid, STRIPPER N311 stripping liquid, Andidocellean 960 cleaning liquid, hydrogen peroxide, sodium persulfate, cyclanes such as cyclohexane and glucose, and the composition comprises the following components in parts by weight: 75 parts by weight of deionized water, 8 parts by weight of DuPont EKC stripping liquid, 6 parts by weight of Islamic ACT940 stripping liquid, 2 parts by weight of STRIPPER N311 stripping liquid, 3 parts by weight of an Anderaglec 960 cleaning liquid, 5 parts by weight of hydrogen peroxide, 4 parts by weight of sodium persulfate, 5 parts by weight of cycloalkane such as cyclohexane and 2 parts by weight of glucose;
the preparation method of the cleaning agent comprises the following steps:
firstly, adding hydrogen peroxide and an focused idealclean960 cleaning solution into deionized water, and stirring and mixing uniformly;
step two, heating the solution to 35 ℃, sequentially adding the Islamic ACT940 stripping liquid, and uniformly stirring for 30 min;
putting the solution into an ice-water bath, adding a DuPont EKC stripping solution and STRIPPER N311 stripping solution builder, and continuously stirring for 40min to disperse the mixture into a uniform mixed solution;
step four, the solution is returned to the room temperature, cycloalkanes such as cyclohexane, glucose and sodium persulfate are added, the mixture is continuously stirred for 60min, and the mixture is dispersed into a uniform mixed solution;
example 2
A water-based microelectronic stripping and cleaning composition is characterized by comprising deionized water, DuPont EKC stripping liquid, Asiatic blue ACT940 stripping liquid, STRIPPER N311 stripping liquid, an aggregation ideal elclean 960 cleaning liquid, hydrogen peroxide, sodium persulfate, cycloheptane and sorbitol, wherein the composition comprises the following components in parts by weight: 85 parts of deionized water, 12 parts of DuPont EKC stripping liquid, 10 parts of Islamic ACT940 stripping liquid, 6 parts of STRIPPER N311 stripping liquid, 6 parts of an Anderagles Dalclean 960 cleaning liquid, 9 parts of hydrogen peroxide, 7 parts of sodium persulfate, 10 parts of cycloheptane and 5 parts of sorbitol;
the preparation method of the cleaning agent comprises the following steps:
firstly, adding hydrogen peroxide and an focused idealclean960 cleaning solution into deionized water, and stirring and mixing uniformly;
step two, heating the solution to 40 ℃, sequentially adding the Islamic ACT940 stripping liquid, and uniformly stirring for 50 min;
putting the solution into an ice-water bath, adding a DuPont EKC stripping solution and STRIPPER N311 stripping solution builder, continuously stirring for 60min, and dispersing into a uniform mixed solution;
and step four, returning the solution to room temperature, adding cycloheptane, sorbitol and sodium persulfate, continuing stirring for 90min, and dispersing into a uniform mixed solution.
The invention provides a water-based microelectronic stripping and cleaning composition, which has the characteristics of low operation temperature, effective stripping, no corrosion to a substrate, direct rinsing by water, safety, environmental protection and cleaning cost reduction.
The invention has the beneficial effects that: STRIPPER N311 the stripping liquid can effectively remove organic residue and improve the cleaning effect on the rough surface; STRIPPER N311 the stripping liquid is used for removing the precipitate after the through hole etching engineering and the processes of photoetching stripping rework and the like;
the arrangement of ideal clean960 cleaning is mainly used for removing precipitates after aluminum wiring etching and stripping through holes and metal organic matters;
the mechanism of the polymer generated after the combined agent cleaning solution removes metal etching is as follows:
the ashlar ACT940 stripper, STRIPPER N311 stripper, hydroxylamine in the focused ideal delclean 960 combine with water to produce an alkaline material that chelates with the polymer and strips it from the metal sidewalls; the alkaline substance can generate micro-etching on the side wall of the metal wire; the stripped polymeric chelate is dissolved in the polar solvent in the composite agent;
after the benzenediol in the Islamic ACT940 stripping liquid and STRIPPER N311 stripping liquid is stripped from the metal wire, performing subsequent cleaning by an integrated ideal clean960 cleaning liquid;
the hydrogen peroxide, the sodium persulfate and the corrosion inhibitor reduce the corrosion effect of the deionized water on the metal;
the hydrogen fluoride in the composition reacts with the polymer to strip the polymer from the metal wire; the polymer is then dissolved in a polar solvent.
The foregoing is merely exemplary and illustrative of the present invention and various modifications, additions and substitutions may be made by those skilled in the art to the specific embodiments described without departing from the scope of the invention as defined in the following claims.
Claims (4)
1. A water-based microelectronic stripping and cleaning composition comprises deionized water, a DuPont EKC stripping liquid, an Islamic ACT940 stripping liquid, STRIPPER N311 stripping liquid, an Anderselclean 960 cleaning liquid, hydrogen peroxide, sodium persulfate, a polar solvent and a corrosion inhibitor, and is characterized in that:
the composition comprises the following components in parts by weight: 75-85 parts of deionized water, 8-12 parts of Dupont EKC stripping liquid, 6-10 parts of Islamic ACT940 stripping liquid, 2-6 parts of STRIPPER N311 stripping liquid, 3-6 parts of an Andrographis and Idelclean 960 cleaning liquid, 5-9 parts of hydrogen peroxide, 4-7 parts of sodium persulfate, 5-10 parts of polar solvent and 2-5 parts of corrosion inhibitor;
the mechanism of the polymer generated after the composition agent removes metal etching is as follows:
the ashlar ACT940 stripper, STRIPPER N311 stripper, hydroxylamine in the focused ideal delclean 960 combine with water to produce an alkaline material that chelates with the polymer and strips it from the metal sidewalls; the alkaline substance can generate micro-etching on the side wall of the metal wire; the stripped polymeric chelate is dissolved in the polar solvent in the composite agent;
after the benzenediol in the Islamic ACT940 stripping liquid and STRIPPER N311 stripping liquid is stripped from the metal wire, performing subsequent cleaning by an integrated ideal clean960 cleaning liquid;
the hydrogen peroxide, the sodium persulfate and the corrosion inhibitor reduce the corrosion effect of the deionized water on the metal;
the hydrogen fluoride in the composition reacts with the polymer to strip the polymer from the metal wire; the polymer is then dissolved in a polar solvent;
the preparation method of the composition comprises the following steps:
firstly, adding hydrogen peroxide and an focused idealclean960 cleaning solution into deionized water, and stirring and mixing uniformly;
step two, heating the solution to 35-40 ℃, sequentially adding the Islamic ACT940 stripping liquid, and uniformly stirring for 30-50 min;
putting the solution into an ice-water bath, adding a DuPont EKC stripping solution and STRIPPER N311 stripping solution builder, and continuously stirring for 40-60min to disperse the mixture into a uniform mixed solution;
and step four, restoring the solution to room temperature, adding the polar solvent, the corrosion inhibitor and the sodium persulfate, continuously stirring for 60-90min, and dispersing into a uniform mixed solution.
2. The aqueous-based microelectronic stripping cleaning composition according to claim 1, wherein the polar solvent comprises a liquid aliphatic hydrocarbon containing 6-18 carbon atoms, any one or a mixture of more than one of cycloalkanes such as cyclohexane, cycloheptane, cyclooctane, cyclodecane, decalin.
3. The aqueous-based microelectronic stripping cleaning composition according to claim 1, wherein the corrosion inhibitor is one or more of glucose, mannose, arabinose, erythrose, fructose, galactose, ribose, deoxyribose, xylose, mannitol, xylitol, and sorbitol.
4. The aqueous-based microelectronic stripping cleaning composition according to claim 1, wherein said sodium persulfate is prepared by a process comprising the steps of:
step S1, adding sodium sulfate into hydrogen peroxide with the concentration of 200-400g/L to prepare solution with the concentration of 100-300 g/L;
step S2, putting the solution into an oil bath pan, and keeping the temperature at 10-15 ℃; magnetically stirring for 30-45min at 500r/min under 200-;
and step S3, carrying out suction filtration on the solution, putting the solution into a vacuum drying oven, and carrying out vacuum drying for 5-10h at the temperature of 50-80 ℃ to obtain white loose sodium persulfate.
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| US6635590B2 (en) * | 2002-01-08 | 2003-10-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for in-situ removal of polymer residue |
| CN107085357A (en) * | 2017-06-23 | 2017-08-22 | 昆山欣谷微电子材料有限公司 | A kind of photoresist lift off liquid |
| CN107338126A (en) * | 2017-06-23 | 2017-11-10 | 昆山欣谷微电子材料有限公司 | A kind of water base microelectronics is peeled off and cleaning liquid composition |
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| JP2014120664A (en) * | 2012-12-18 | 2014-06-30 | Dainippon Screen Mfg Co Ltd | Peeling assist method and peeling assist device |
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| US6635590B2 (en) * | 2002-01-08 | 2003-10-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Apparatus and method for in-situ removal of polymer residue |
| CN107085357A (en) * | 2017-06-23 | 2017-08-22 | 昆山欣谷微电子材料有限公司 | A kind of photoresist lift off liquid |
| CN107338126A (en) * | 2017-06-23 | 2017-11-10 | 昆山欣谷微电子材料有限公司 | A kind of water base microelectronics is peeled off and cleaning liquid composition |
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