CN101471271A - Rapid detection method for gallium nitride epitaxial slice - Google Patents
Rapid detection method for gallium nitride epitaxial slice Download PDFInfo
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- CN101471271A CN101471271A CNA2007101861313A CN200710186131A CN101471271A CN 101471271 A CN101471271 A CN 101471271A CN A2007101861313 A CNA2007101861313 A CN A2007101861313A CN 200710186131 A CN200710186131 A CN 200710186131A CN 101471271 A CN101471271 A CN 101471271A
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Abstract
The invention discloses a quick detection mode of gallium nitride epitaxial slices, which comprises epitaxial slice annealing, cleaning, ICP etching, deoxidation layer cleaning, photo-etching, deposition electrode, stripping, alloys and detecting steps. The invention can conveniently, quickly and precisely detect all specifications of epitaxial slices.
Description
Technical field
The invention belongs to technical field of semiconductors, relate to a kind of detection method of gallium nitride epitaxial slice.
Background technology
In the manufacturing process of epitaxial wafer, because the epitaxial growth conditional request is rigorous especially, condition changes slightly will influence the normal growth of extension, in order to control the quality of gallium nitride epitaxial slice, need carry out quality testing to the epitaxial wafer of harsh length, after having grown, each stove must in the shortest time, take the growth conditions that testing result could determine next stove, every index parameter that will detect harsh longer gallium nitride epitaxial slice in most of manufacturers has two kinds of methods, the one, buy special checkout equipment, the testing cost height, and this checkout equipment can only detect wavelength, parameters such as brightness, can not detect voltage data, this method has significant limitation; The 2nd, the epitaxial wafer of harsh length to be made behind the chip according to the technology of ordinary production detect again, normal process comprises cleanings of deoiling--SiO grows
2----corrosion is removed photoresist, and----------evaporation ITO--peels off, and------evaporation PN electrode--is peeled off--steps such as some surveys to third photo etching to alloy to the deoxidation layer to the ICP etching in the secondary photoetching to remove mask in a photoetching, therefore, make chip according to normal technology, flow process is quite loaded down with trivial details, generally to just can obtain testing result later at 24 hours, chronic, and take the device resource of normal process, Material Cost, cost of labor are all very high.
Summary of the invention
The technical problem to be solved in the present invention provide a kind of fast, result's method for quick of gallium nitride epitaxial slice accurately.
The present invention solves above-mentioned technical problem by the following technical solutions: a kind of method for quick of gallium nitride epitaxial slice, it is characterized in that, and may further comprise the steps:
1), epitaxial wafer annealing: from each stove that metal organic chemical vapor deposition equipment grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen and under the 600-1200 degree, keep 10～60min;
2), clean: use solvent to epitaxial wafer clean to be checked, rinse well with deionized water again;
3), ICP etching: hide epitaxial wafer to be checked with discarded epitaxial wafer as mask, epitaxial wafer to be checked exposes a part at the another side relative with gulde edge, by the ICP etching exposed portions serve is etched into the n type gallium nitride layer;
4), the deoxidation layer cleans: use acid solution, aqueous slkali, organic solvent, washed with de-ionized water successively, to remove oxide layer;
5), photoetching: upper and lower, left and right and middle at epitaxial wafer to be checked make figure by lithography;
6), electrode evaporation: epitaxial wafer evaporation nickel to be checked after the photoetching and golden double layer of metal electrode;
7), peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8), alloy: the mist that feeds nitrogen and oxygen with high-temperature annealing furnace under the 400-600 degree carries out annealing in process to epitaxial wafer to be checked;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, then the parameters of this epitaxial wafer to be checked is tested.
The method for quick of gallium nitride epitaxial slice preferably includes following steps:
1), epitaxial wafer annealing: from each stove that metal organic chemical vapor deposition grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 15-40min under the 800-1000 degree;
2), clean: use the hydrochloric acid solution sonicated of acetone, ethanol, 36-38%, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: hide epitaxial wafer to be checked as mask with discarded epitaxial wafer, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked does not hide, by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, etching depth is the 4000-12000 dust;
4), the deoxidation layer cleans: use 36-38% hydrochloric acid, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water successively;
5), photoetching: glue is born in coating on epitaxial wafer to be checked, dries by the fire, develops through preceding baking, exposure, back, behind deionized water rinsing, makes figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6) electrode evaporation: epitaxial wafer evaporation nickel to be checked and golden double layer of metal after utilizing the electron beam evaporation plating technology to photoetching, wherein the thickness of nickel is 35 dusts, the thickness of gold is 120 dusts;
7) peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8) alloy: will examine epitaxial wafer and put into high-temperature annealing furnace, feeding volume ratio under the 400-600 degree is that 3: 1～1: 5 the nitrogen and the mixed gas of oxygen carry out annealing in process, to reduce the ohmic contact of Ni/Au electrode with epitaxial wafer to be checked, reduces voltage;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the use point measurement machine is tested the parameters of this epitaxial wafer to be checked.
The method for quick of gallium nitride epitaxial slice most preferably may further comprise the steps:
1), epitaxial wafer annealing: from each stove that metal organic chemical vapor deposition grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 15min under 600 degree;
2), clean: use acetone, ethanol, 36% hydrochloric acid solution sonicated respectively, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: make mask with discarded epitaxial wafer, epitaxial wafer to be checked is hidden, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked will not hide, and by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, and etching depth is 5000～10000 dusts; Wherein the ICP etching condition is: etching gas Cl
2Flow be 16SCCM, BCl
3Flow be 40SCCM, power: RF is 250W, ICP is 1800W;
4), the deoxidation layer cleans: use the hydrochloric acid of 36-38%, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water successively;
5), photoetching: epitaxial wafer 100-150 to be checked ℃ of following dewatering roast 5-15min, cooling 10min, the negative glue of coating on epitaxial wafer to be checked, through drying 50-60sec down at 90-110 ℃, expose 3.2sec, 110-127 ℃ and dry 50-80sec down, cooling 11min, 2.38%TMAH development 27sec, wash 5-10min with deionized water rinsing, make figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6), electrode evaporation: the epitaxial wafer to be checked after the photoetching is contained on the plating pot, utilizes electron beam evaporation platform evaporation nickel and golden double layer of metal, wherein nickel thickness is 35 dusts, and golden thickness is 120 dusts;
7), peel off: peel off the removal photoresist with stripper, appear litho pattern;
8), alloy: under the 400-600 degree, feed nitrogen that volume ratio is 3:1 and the mist of oxygen carries out annealing in process to epitaxial wafer to be checked with high-temperature annealing furnace,, reduce voltage to reduce the ohmic contact of Ni/Au with epitaxial wafer to be checked;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the electric current that uses point measurement machine to feed 20 milliamperes is tested the parameters of this epitaxial wafer.
Detection method of the present invention is efficient and convenient, but every index parameter of the gallium nitride epitaxial slice that fast detecting has just grown out from metal organic chemical vapor deposition (MOCVD), comprise all technical indicators such as voltage, wavelength, brightness, and detect and about 3 hours, to finish, saved detection time greatly, and can utilize existing equipment, and need not additionally to buy other checkout equipments, Material Cost and cost of labor are all very low.
Embodiment
Embodiment 1, and the method for quick of gallium nitride epitaxial slice may further comprise the steps:
1), epitaxial wafer annealing: from each stove that MOCVD grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 15min under 600 degree;
2), clean: use acetone, ethanol, 36% hydrochloric acid solution sonicated, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: make mask with discarded epitaxial wafer, the epitaxial wafer to be checked that will detect hides, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked will not hide, and by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, and etching depth is 5000 dusts; Wherein the ICP etching condition is: etching gas Cl
2Flow be 16SCCM, BCl
3Flow be 40SCCM, power: RF is 250W, ICP is 1800W;
4), the deoxidation layer cleans: use 38% hydrochloric acid successively, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water;
5), photoetching: 100 ℃ of following dewatering roast 15min of epitaxial wafer to be checked, cooling 10min, the negative glue of coating DNR-L300D1 type on epitaxial wafer to be checked, rotating speed is 3000rpm, coating 50sec, dry 60sec down at 90 ℃, exposure 3.2sec, 110 ℃ of following oven dry 80sec, cooling 11min, 2.38%TMAH development 27sec, wash 5min with deionized water rinsing, make figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6), electrode evaporation: the epitaxial wafer to be checked after the photoetching is contained on the plating pot, utilizes electron beam evaporation platform evaporation nickel electrode and gold electrode, wherein nickel electrode thickness is 35 dusts, and gold electrode thickness is 120 dusts;
7), peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8), alloy: feeding volume ratio with high-temperature annealing furnace under 400 degree is that the nitrogen of 3:1 and the mist of oxygen carry out annealing in process to epitaxial wafer to be checked, to reduce the ohmic contact of Ni/Au with epitaxial wafer to be checked, reduces voltage;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the electric current that uses point measurement machine to feed 20 milliamperes is tested the parameters of this epitaxial wafer.
Wherein the main component of stripper is an ethanol ammonia, and model is SN-01 type, and manufacturer is the Jiangyin Jianghua Microelectronic Materials Co., Ltd.
Embodiment 2, and the method for quick of gallium nitride epitaxial slice may further comprise the steps:
1), epitaxial wafer annealing: from each stove that MOCVD grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 7min under 1000 degree;
2), clean: use acetone, ethanol, 38% hydrochloric acid solution sonicated, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: make mask with discarded epitaxial wafer, the epitaxial wafer to be checked that will detect hides, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked will not hide, and by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, etching depth 4000 dusts; Wherein the ICP etching condition is: etching gas Cl
2Flow be 16SCCM, BCl
3Flow be 40SCCM, power: RF is 250W, ICP is 1800W;
4), the deoxidation layer cleans: use 37% hydrochloric acid, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water successively;
5), photoetching: 120 ℃ of following dewatering roast 10min of epitaxial wafer to be checked, cooling 10min, the negative glue of coating DNR-L300D1 type on epitaxial wafer to be checked, rotating speed is 4000rpm, coating 50sec, through drying 55sec down at 100 ℃, exposure 3.2sec, 115 ℃ of following oven dry 75sec, cooling 11min, 2.38%TMAH development 27sec, wash 8min with deionized water rinsing, make figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6), electrode evaporation: the epitaxial wafer to be checked after the photoetching is contained on the plating pot, utilizes electron beam evaporation platform evaporation nickel electrode and gold electrode, wherein nickel electrode thickness is 35 dusts, and gold electrode thickness is 120 dusts;
7), peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8), alloy: feeding volume ratio with high-temperature annealing furnace under 500 degree is that the nitrogen of 1:5 and the mist of oxygen carry out annealing in process to epitaxial wafer to be checked, to reduce the ohmic contact of Ni/Au with epitaxial wafer to be checked, reduces voltage;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the electric current that uses point measurement machine to feed 20 milliamperes is tested the parameters of this epitaxial wafer.
Embodiment 3, and the method for quick of gallium nitride epitaxial slice may further comprise the steps:
1), epitaxial wafer annealing: from each stove that MOCVD grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 10min under 1200 degree;
2), clean: use acetone, ethanol, 36% hydrochloric acid solution sonicated, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: make mask with discarded epitaxial wafer, the epitaxial wafer to be checked that will detect hides, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked will not hide, and by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, etching depth 10000 dusts; Wherein the ICP etching condition is: etching gas Cl
2Flow be 16SCCM, BCl
3Flow be 40SCCM, power: RF is 250W, ICP is 1800W;
4), the deoxidation layer cleans: use 38% hydrochloric acid successively, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water;
5), photoetching: 150 ℃ of following dewatering roast 5min of epitaxial wafer to be checked, cooling 10min, the negative glue of coating DNR-L300D1 type on epitaxial wafer to be checked, rotating speed is 2000rpm, coating 50sec, through drying 50sec down at 110 ℃, exposure 3.2sec, 127 ℃ of following oven dry 50sec, cooling 11min, 2.38%TMAH development 27sec, wash 10min with deionized water rinsing, make figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6), electrode evaporation: the epitaxial wafer to be checked after the photoetching is contained on the plating pot, utilizes electron beam evaporation platform evaporation nickel electrode and gold electrode, wherein nickel electrode thickness is 35 dusts, and gold electrode thickness is 120 dusts;
7), peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8), alloy: feeding volume ratio with high-temperature annealing furnace under 600 degree is that the nitrogen of 1:1 and the mist of oxygen carry out annealing in process to epitaxial wafer to be checked, to reduce the ohmic contact of Ni/Au with epitaxial wafer to be checked, reduces voltage;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the electric current that uses point measurement machine to feed 20 milliamperes is tested the parameters of this epitaxial wafer.
Embodiment 4, and the method for quick of gallium nitride epitaxial slice may further comprise the steps:
1), epitaxial wafer annealing: from each stove that MOCVD grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 25min under 800 degree;
2), clean: use acetone, ethanol, 36% hydrochloric acid solution sonicated, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: make mask with discarded epitaxial wafer, the epitaxial wafer to be checked that will detect hides, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked will not hide, and by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, etching depth 12000 dusts; Wherein the ICP etching condition is: etching gas Cl
2Flow be 16SCCM, BCl
3Flow be 40SCCM, power: RF is 250W, ICP is 1800W;
4), the deoxidation layer cleans: use 38% hydrochloric acid successively, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water;
5), photoetching: 150 ℃ of following dewatering roast 5min of epitaxial wafer to be checked, cooling 10min, the negative glue of coating DNR-L300D1 type on epitaxial wafer to be checked, rotating speed is 2500rpm, coating 50sec, through drying 58sec down at 110 ℃, exposure 3.2sec, 127 ℃ of following oven dry 50sec, cooling 11min, 2.38%TMAH development 27sec, wash 10min with deionized water rinsing, make figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6), electrode evaporation: the epitaxial wafer to be checked after the photoetching is contained on the plating pot, utilizes electron beam evaporation platform evaporation nickel electrode and gold electrode, wherein nickel electrode thickness is 35 dusts, and gold electrode thickness is 120 dusts;
7), peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8), alloy: feeding volume ratio with high-temperature annealing furnace under 550 degree is that the nitrogen of 2:1 and the mist of oxygen carry out annealing in process to epitaxial wafer to be checked, to reduce the ohmic contact of Ni/Au with epitaxial wafer to be checked, reduces voltage;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the electric current that uses point measurement machine to feed 20 milliamperes is tested the parameters of this epitaxial wafer.
The present invention and the contrast of normal process testing result:
Extract the epitaxial wafer of 10 harsh length in same stove, wherein detect 5 according to normal process, detect according to shock processing of the present invention, testing result sees the following form:
The point measurement machine that the detection of brightness in the last table, voltage, wavelength adopts Taiwan MJC Probe Inc. to produce, model is the LEDA-8S test condition: the electric current of forward 20mA.
As can be seen from the above table: the used time average of shock processing of the present invention was at 3 hours, the normal process time average was at 24 hours, the used time is original 1/8, testing result is compared with normal process, average voltage differs 0.1 volt, wavelength differs 1 nanometer, and brightness differs in 1 milli candela, reaches the index of manufacturing requirements fully.
Claims (3)
1, a kind of method for quick of gallium nitride epitaxial slice is characterized in that, may further comprise the steps:
1), epitaxial wafer annealing: from each stove that metal organic chemical vapor deposition equipment grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen and under the 600-1200 degree, keep 10～60min;
2), clean: use solvent to epitaxial wafer clean to be checked, rinse well with deionized water again;
3), ICP etching: hide epitaxial wafer to be checked with discarded epitaxial wafer as mask, epitaxial wafer to be checked exposes a part at the another side relative with gulde edge, by the ICP etching exposed portions serve is etched into the n type gallium nitride layer;
4), the deoxidation layer cleans: use acid solution, aqueous slkali, organic solvent, washed with de-ionized water successively, to remove oxide layer;
5), photoetching: upper and lower, left and right and middle at epitaxial wafer to be checked make figure by lithography;
6), electrode evaporation: epitaxial wafer evaporation nickel to be checked after the photoetching and golden double layer of metal electrode;
7), peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8), alloy: the mist that feeds nitrogen and oxygen with high-temperature annealing furnace under the 400-600 degree carries out annealing in process to epitaxial wafer to be checked;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, then the parameters of this epitaxial wafer to be checked is tested.
2, the method for quick of gallium nitride epitaxial slice as claimed in claim 1 is characterized in that, may further comprise the steps:
1), epitaxial wafer annealing: from each stove that metal organic chemical vapor deposition grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 15-40min under the 800-1000 degree;
2), clean: use the hydrochloric acid solution sonicated of acetone, ethanol, 36-38%, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: hide epitaxial wafer to be checked as mask with discarded epitaxial wafer, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked does not hide, by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, etching depth is the 4000-12000 dust;
4), the deoxidation layer cleans: use 36-38% hydrochloric acid, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water successively;
5), photoetching: glue is born in coating on epitaxial wafer to be checked, dries by the fire, develops through preceding baking, exposure, back, behind deionized water rinsing, makes figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6) electrode evaporation: epitaxial wafer evaporation nickel to be checked and golden double layer of metal after utilizing the electron beam evaporation plating technology to photoetching, wherein the thickness of nickel is 35 dusts, the thickness of gold is 120 dusts;
7) peel off: peel off the removal photoresist with stripper, appear the figure of photoetching;
8) alloy: will examine epitaxial wafer and put into high-temperature annealing furnace, feeding volume ratio under the 400-600 degree is that the nitrogen of 3:1～1:5 and the mixed gas of oxygen carry out annealing in process, to reduce the ohmic contact of Ni/Au electrode with epitaxial wafer to be checked, reduces voltage;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the use point measurement machine is tested the parameters of this epitaxial wafer to be checked.
3, the method for quick of gallium nitride epitaxial slice as claimed in claim 2 is characterized in that, may further comprise the steps:
1), epitaxial wafer annealing: from each stove that metal organic chemical vapor deposition grows, extract a slice epitaxial wafer as epitaxial wafer to be checked, put into quick anneal oven, feed nitrogen, the maintenance 15min under 600 degree;
2), clean: use acetone, ethanol, 36% hydrochloric acid solution sonicated respectively, use the surface of deionized water rinsing epitaxial wafer to be checked at last;
3), ICP etching: make mask with discarded epitaxial wafer, epitaxial wafer to be checked is hidden, the width that exposes the 3-4 millimeter at the relative opposite side of epitaxial wafer gulde edge to be checked will not hide, and by the ICP lithographic technique exposed portions serve is etched into the n type gallium nitride layer, and etching depth is 5000～10000 dusts; Wherein the ICP etching condition is: etching gas Cl
2Flow be 16SCCM, BCl
3Flow be 40SCCM, power: RF is 250W, ICP is 1800W;
4), the deoxidation layer cleans: use the hydrochloric acid of 36-38%, 40% potassium hydroxide, acetone, ethanol, washed with de-ionized water successively;
5), photoetching: epitaxial wafer 100-150 to be checked ℃ of following dewatering roast 5-15min, cooling 10min, the negative glue of coating on epitaxial wafer to be checked, through drying 50-60sec down at 90-110 ℃, expose 3.2sec, 110-127 ℃ and dry 50-80sec down, cooling 11min, 2.38%TMAH development 27sec, wash 5-10min with deionized water rinsing, make figure by lithography in upper and lower, left and right, the middle of epitaxial wafer to be checked;
6), electrode evaporation: the epitaxial wafer to be checked after the photoetching is contained on the plating pot, utilizes electron beam evaporation platform evaporation nickel and golden double layer of metal, wherein nickel thickness is 35 dusts, and golden thickness is 120 dusts;
7), peel off: peel off the removal photoresist with stripper, appear litho pattern;
8), alloy: under the 400-600 degree, feed nitrogen that volume ratio is 3:1 and the mist of oxygen carries out annealing in process to epitaxial wafer to be checked with high-temperature annealing furnace,, reduce voltage to reduce the ohmic contact of Ni/Au with epitaxial wafer to be checked;
9), detect: spot welding indium on the n type gallium nitride layer of the epitaxial wafer to be checked after the annealing, the electric current that uses point measurement machine to feed 20 milliamperes is tested the parameters of this epitaxial wafer.
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| CNA2007101861313A CN101471271A (en) | 2007-12-27 | 2007-12-27 | Rapid detection method for gallium nitride epitaxial slice |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102136528A (en) * | 2010-12-24 | 2011-07-27 | 晶能光电（江西）有限公司 | Method for preparing fluorescent powder layer on surface of LED (Light-Emitting Diode) grain |
| CN102376836A (en) * | 2010-08-24 | 2012-03-14 | 上海博恩世通光电股份有限公司 | LED (Light Emitting Diode) chip and manufacturing method thereof |
| CN104697973A (en) * | 2013-12-04 | 2015-06-10 | 北京智朗芯光科技有限公司 | Epitaxial wafer raman scattering spectra data generation method |
| CN105390935A (en) * | 2015-12-03 | 2016-03-09 | 长江大学 | Preparation method for laser chip with marking function |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102376836A (en) * | 2010-08-24 | 2012-03-14 | 上海博恩世通光电股份有限公司 | LED (Light Emitting Diode) chip and manufacturing method thereof |
| CN102136528A (en) * | 2010-12-24 | 2011-07-27 | 晶能光电（江西）有限公司 | Method for preparing fluorescent powder layer on surface of LED (Light-Emitting Diode) grain |
| CN102136528B (en) * | 2010-12-24 | 2015-12-02 | 晶能光电（江西）有限公司 | The method of phosphor powder layer is prepared on LED crystal particle surface |
| CN104697973A (en) * | 2013-12-04 | 2015-06-10 | 北京智朗芯光科技有限公司 | Epitaxial wafer raman scattering spectra data generation method |
| CN105390935A (en) * | 2015-12-03 | 2016-03-09 | 长江大学 | Preparation method for laser chip with marking function |
| CN105390935B (en) * | 2015-12-03 | 2018-03-06 | 长江大学 | A kind of preparation method of the chip of laser with mark function |
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