CN105390935B - A kind of preparation method of the chip of laser with mark function - Google Patents

A kind of preparation method of the chip of laser with mark function Download PDF

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Publication number
CN105390935B
CN105390935B CN201510880494.1A CN201510880494A CN105390935B CN 105390935 B CN105390935 B CN 105390935B CN 201510880494 A CN201510880494 A CN 201510880494A CN 105390935 B CN105390935 B CN 105390935B
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China
Prior art keywords
epitaxial wafer
chip
laser
photoetching
exposure
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CN105390935A (en
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高海根
冯定
管锋
吴文秀
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Yangtze University
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Yangtze University
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/20Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/24Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a grooved structure, e.g. V-grooved, crescent active layer in groove, VSIS laser

Abstract

The present invention relates to a kind of preparation method of the chip of laser with mark function, belong to semiconductor laser field.The present invention by use carbon tetrachloride again by epitaxial wafer after a photoetching, secondary photoetching and third photo etching, trichloro ethylene, acetone, and epitaxial wafer is boiled twice of cleaning by ethanol, then with deionized water rinsing 30 times, dries up;Finally sputter backplate AuGeNi/Au, and the short annealing 35s under the conditions of 420 DEG C, the chip of laser with mark function is made, the chip of laser prepared by the present invention, the design of mark zone and auxiliary block is added relative to existing chip of laser, when assessing extension tablet quality and chip yields, need to only be sampled test can meet to assess requirement.Chip of laser prepared by the present invention is simple in construction, greatly reduces the workload for assessing chip, and also improves the utilization rate of product, is particularly suitable for the needs that laser carries out chip testing, used.

Description

A kind of preparation method of the chip of laser with mark function
Technical field
The present invention relates to a kind of preparation method of the chip of laser with mark function, belong to semiconductor laser technology Field.
Background technology
The application of semiconductor laser covers whole opto-electronics, as the core of current photoelectron science Technology.Due to semiconductor laser have small volume, simple in construction, input energy is low, long lifespan, be easy to modulation and it is cheap The advantages of, it is had a wide range of applications in terms of medicine equipment, material processing, military and national defense.
Chip easily produces substantial amounts of heat when high power semiconductor lasers work, and influences the normal use of chip, heat A part for amount is contributed by Joule heat.For ordinary circumstance, it is to reduce chip-resistance to reduce the measure that Joule heat is taken, i.e., In chip back(N faces)Plate thick gold.When layer gold thickness is larger, layer gold is relatively compact, can reduce chip-resistance.But layer gold Thickness increases the degree of difficulty for also increasing cleavage.In addition during MOCVD grows epitaxial structure, due to substrate(Three)Position The difference for putting epitaxial wafer thickness caused by fixation problem also result in the difference of extension piece performance.In order to assess extension tablet quality And estimation yields, generally require all to be tested the chip that cleavage is got off, working strength is big, it is impossible to meets enterprise practical The demand of production.But if being aware of accurate location of the chip on epitaxial wafer, we just only need to be sampled test, this Workload is not only greatly reduced, and also improves the utilization rate of product.Therefore in view of factors above, it is necessary to which design is a kind of Chip of laser with mark function, to meet needs that semiconductor laser chip is tested, used.
The content of the invention
It is an object of the invention to:It is simple to provide a kind of method, to solve existing epitaxial wafer cleavage difficulty and carry out quality And yields when estimating, it is necessary to the chip that cleavage is got off all is tested, the big problem of workload with mark function The preparation method of chip of laser.
The technical scheme is that:
A kind of preparation method of the chip of laser with mark function, it is characterised in that:It comprises the following steps:
1), first by epitaxial wafer absorption on spin coater, positive photoresist in drop, unlatching spin coater, rotating speed 4000r/ Min, so that positive photoresist forms the equally distributed photoresist thin layer that thickness is 1.2 μm on epitaxial wafer surface;
2), by after spin coating epitaxial wafer take out, 100o1min is toasted at a temperature of C;
3), the epitaxial wafer after baking exposed into 30s on litho machine, a width of 100 μm of the exposure area after photoetching;
4), after exposure, epitaxial wafer is placed in the solution for fill developer solution with tweezers and stands 25s, is then being gone Cleaned, and dried up in ionized water;
5), by the epitaxial wafer after development 100o6min is toasted under C, then, with the epitaxial wafer after oxonium ion bombardment development Surface, it is ensured that the glue for remaining surface exposure region is removed clean;
6), by citric acid and deionized water according to mass ratio be 1:After 1 prepares 24 hours, according still further to volume ratio 5:1 part Amount adds hydrogen peroxide, is stirred evenly after the completion of configuration with clean glass bar and stands 15min, then places epitaxial wafer and wherein corrodes 105s;Accuse the first time photoetching for completing epitaxial wafer;
7), the epitaxial wafer for completing first time photoetching is boiled to cleaning twice in succession in acetone and with deionized water rinsing 30 It is secondary, drying;Then the thick SiO of last layer 200nm are deposited2, then using step 2)—7)Method to epitaxial wafer carry out secondary light Carve;Upper end a width of 5 μm of exposure area of starting is presented on epitaxial wafer after secondary photoetching, exposure region field width gradually increases from top to bottom 100nm, a width of 5 μm of left end exposure area, exposure region field width from left to right gradually increase 100nm exposure section;
8), by the epitaxial wafer HF after secondary photoetching:NH4F:H2O volume ratio is 3:6:10 mixed solution is corroded Until SiO2Erode completely;
9), by citric acid and deionized water according to mass ratio be 1:After 1 prepares 24 hours, according still further to volume ratio 5:1 part Amount adds hydrogen peroxide, is stirred evenly after the completion of configuration with clean glass bar and stands 15min;And the epitaxial wafer after drying is placed on Corroded in the mixed solution of above-mentioned preparation, time 125s;
10), by the epitaxial wafer after above-mentioned processing use with first time photoetching and second of photoetching identical mode, exposed The third photo etching that a width of 95 μm of light region;Then the epitaxial wafer after photoetching is placed on HF:NH4F:H2O volume ratio is in 3:6:10 Mixed solution in carry out corrosion until SiO2Erode completely;
11), to prepare with magnetron sputtering front electrode Au/Pt/Ni, Au thickness degree be 50nm, Pt thickness degree is 50nm, Ni layers Thickness is 300nm, and the face where front electrode is the face for being carved with ridged platform;Then it is n faces by the epitaxial wafer back side, with paraffin pressure 120 μm or so are thinned on heavy sheet glass piece and on polishing machine, then first with useless trichloro ethylene epitaxial wafer from heavy sheet glass piece On boil, then use carbon tetrachloride again, trichloro ethylene, acetone, epitaxial wafer is boiled twice of cleaning by ethanol, then uses deionized water Rinse 30 times, drying;Backplate AuGeNi/Au, and the short annealing 35s under the conditions of 420 DEG C are finally sputtered, is obtained with mark Cite sb. for meritorious service can chip of laser.
The advantage of the invention is that:
The chip of laser prepared by the present invention, mark zone and auxiliary block are added relative to existing chip of laser Design.Further, since corroded in mark zone depth be 500nm groove, therefore during cleavage along groove cleavage it is avoided that The problem of cleavage difficulty for being brought by thick gold electrode.Simultaneously according to the size of mark zone, the chip that cleavage is got off can be known Accurate location on epitaxial wafer.After detecting accurate location of the chip on epitaxial wafer, to extension tablet quality and chip non-defective unit When rate is assessed, need to only be sampled test can meet to assess requirement.Chip of laser structure letter prepared by the present invention It is single, the workload for assessing chip is greatly reduced, and the utilization rate of product is also improved, it is particularly suitable for laser and carries out chip The needs test, used.
Embodiment
First by epitaxial wafer absorption on spin coater, positive photoresist in drop, unlatching spin coater, rotating speed 4000r/min, So that positive photoresist forms the equally distributed photoresist thin layer that thickness is 1.2 μm on epitaxial wafer surface.Will be outer after spin coating Prolong piece taking-up, 100o1min is toasted at a temperature of C;Purpose is that the solvent evaporation in the positive photoresist of part is clean, so that Reduce the viscosity of glued membrane.Epitaxial wafer after baking is exposed into 30s on litho machine, a width of 100 μ in the exposure area after photoetching m .After exposure, epitaxial wafer is placed in the solution for fill developer solution with tweezers and stands 25s completion developments, is then being gone Cleaned, and dried up in ionized water.By the epitaxial wafer after development 100oUnder C toast 6min complete post bake, then with oxygen from Epitaxial wafer surface after son bombardment development, post bake is clean to ensure to remove in the glue of epitaxial wafer surface exposure region residual.
According to mass ratio it is 1 by citric acid and deionized water:After 1 prepares 24 hours, according still further to volume ratio 5:1 deal adds Enter hydrogen peroxide, stirred evenly after the completion of configuration with clean glass bar and stand 15min, then epitaxial wafer is placed and wherein corroded 105s;Accuse the first time photoetching for completing epitaxial wafer.
The epitaxial wafer for completing first time photoetching is boiled into cleaning and with deionized water rinsing 30 times twice in succession in acetone, Drying;Then upper SiO is dripped2,Open spin coater, rotating speed 4000r/min, so that SiO2200nm thickness is formed on epitaxial wafer surface SiO2Coating, then using step 2)—7)Method secondary photoetching is carried out to epitaxial wafer;Presented on epitaxial wafer after secondary photoetching Upper end originates a width of 5 μm of exposure area, and exposure region field width gradually increases 100nm from top to bottom, a width of 5 μm of left end exposure area, Exposure region field width from left to right gradually increases 100nm exposure section.By the epitaxial wafer HF after secondary photoetching:NH4F:H2O Volume ratio be 3:6:10 mixed solution carries out corrosion until SiO2Erode completely.
According to mass ratio it is 1 by citric acid and deionized water:After 1 prepares 24 hours, according still further to volume ratio 5:1 deal adds Enter hydrogen peroxide, stirred evenly after the completion of configuration with clean glass bar and stand 15min;And the epitaxial wafer after drying is again placed at Corroded in the mixed solution of above-mentioned preparation, time 125s.Epitaxial wafer after above-mentioned processing is used and first time photoetching With second of photoetching identical mode, the third photo etching in a width of 95 μm of region is exposed;Then the epitaxial wafer after photoetching is put Put in HF:NH4F:H2O volume ratio is in 3:6:Corrosion is carried out in 10 mixed solution until SiO2Erode completely.
It is 50nm to prepare front electrode Au/Pt/Ni, Au thickness degree with magnetron sputtering, and Pt thickness degree is 50nm, Ni thickness degree For 300nm, the face where front electrode is the face for being carved with ridged platform;Then it is n faces by the epitaxial wafer back side, thickness is pressed in paraffin 120 μm or so are thinned on sheet glass and on polishing machine, then first epitaxial wafer is boiled from heavy sheet glass piece with useless trichloro ethylene Get off, then use carbon tetrachloride again, trichloro ethylene, acetone, epitaxial wafer is boiled twice of cleaning by ethanol, then uses deionized water rinsing 30 times, drying;Backplate AuGeNi/Au, and the short annealing 35s under the conditions of 420 DEG C are finally sputtered, is obtained with mark work( The chip of laser of energy.

Claims (1)

  1. A kind of 1. preparation method of the chip of laser with mark function, it is characterised in that:It comprises the following steps:
    1), first by epitaxial wafer absorption on spin coater, positive photoresist in drop, unlatching spin coater, rotating speed 4000r/min, So that positive photoresist forms the equally distributed photoresist thin layer that thickness is 1.2 μm on epitaxial wafer surface;
    2), by after spin coating epitaxial wafer take out, 100o1min is toasted at a temperature of C;
    3), the epitaxial wafer after baking exposed into 30s on litho machine, a width of 100 μm of the exposure area after photoetching;
    4), after exposure, epitaxial wafer is placed in the solution for fill developer solution with tweezers and stands 25s, then in deionization Cleaned, and dried up in water;
    5), by the epitaxial wafer after development 100o6min is toasted under C, then, the epitaxial wafer surface after being developed with oxonium ion bombardment, The glue for ensuring to remain surface exposure region is removed clean;
    6), by citric acid and deionized water according to mass ratio be 1:After 1 prepares 24 hours, according still further to citric acid solution and hydrogen peroxide Volume ratio 5:1 deal adds hydrogen peroxide, is stirred evenly after the completion of configuration with clean glass bar and stands 15min, then by extension Piece, which is placed, wherein corrodes 105s;Accuse the first time photoetching for completing epitaxial wafer;
    7), the epitaxial wafer for completing first time photoetching is boiled to cleaning twice in succession in acetone and with deionized water rinsing 30 times, Drying;Then upper SiO is dripped2,Open spin coater, rotating speed 4000r/min, so that SiO2200nm thickness is formed on epitaxial wafer surface Coating, then using step 2)—7)Method secondary photoetching is carried out to epitaxial wafer;Upper end is presented on epitaxial wafer after secondary photoetching A width of 5 μm of exposure area is originated, exposure region field width gradually increases 100nm, a width of 5 μm of left end exposure area, from a left side from top to bottom Exposure region field width to the right side gradually increases 100nm exposure section;
    8), by the epitaxial wafer HF after secondary photoetching:NH4F:H2O volume ratio is 3:6:10 mixed solution carry out corrosion until SiO2Erode completely;
    9), by citric acid and deionized water according to mass ratio be 1:After 1 prepares 24 hours, according still further to citric acid solution and hydrogen peroxide Volume ratio 5:1 deal adds hydrogen peroxide, is stirred evenly after the completion of configuration with clean glass bar and stands 15min;And after drying up Epitaxial wafer be placed in the mixed solution of above-mentioned preparation and corroded, time 125s;
    10), by the epitaxial wafer after above-mentioned processing use with first time photoetching and second of photoetching identical mode, be exposed area Field width is 95 μm of third photo etching;Then the epitaxial wafer after photoetching is placed on HF:NH4F:H2O volume ratio is in 3:6:10 it is mixed Close and corrosion is carried out in solution until SiO2Erode completely;
    11), prepare front electrode Au/Pt/Ni with magnetron sputtering, sputtering order sputters Au → Pt for bottom and taken second place → top sputtering Ni, Au thickness degree are 50nm, and Pt thickness degree is 50nm, and Ni thickness degree is 300nm, and the face where front electrode is to be carved with ridged The face of platform;Then it is n faces by the epitaxial wafer back side, is pressed in paraffin on heavy sheet glass piece and is thinned to 120 μm or so on polishing machine, Then first epitaxial wafer from heavy sheet glass piece is boiled with useless trichloro ethylene, then uses carbon tetrachloride again, trichloro ethylene, acetone, Epitaxial wafer is boiled twice of cleaning by ethanol, then with deionized water rinsing 30 times, drying;Backplate AuGeNi/Au is finally sputtered, And the short annealing 35s under the conditions of 420 DEG C, obtain the chip of laser with mark function.
CN201510880494.1A 2015-12-03 2015-12-03 A kind of preparation method of the chip of laser with mark function Expired - Fee Related CN105390935B (en)

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CN111073649A (en) * 2019-12-30 2020-04-28 中国科学院半导体研究所 Etching solution for secondary epitaxial pretreatment, preparation method thereof and pretreatment method
CN114204401A (en) * 2020-09-17 2022-03-18 深圳市中光工业技术研究院 Method for improving edge flattening precision of semiconductor wafer and laser chip

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1185870A (en) * 1995-05-30 1998-06-24 摩托罗拉公司 Method for etching photolithographically produced quartz crystal blanks for singulation
CN101471271A (en) * 2007-12-27 2009-07-01 深圳市方大国科光电技术有限公司 Rapid detection method for gallium nitride epitaxial slice
CN102468233A (en) * 2010-11-05 2012-05-23 稳懋半导体股份有限公司 Fabrication method for dicing of semiconductor wafers using laser cutting techniques

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080318343A1 (en) * 2007-06-25 2008-12-25 Krishna Vepa Wafer reclaim method based on wafer type

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1185870A (en) * 1995-05-30 1998-06-24 摩托罗拉公司 Method for etching photolithographically produced quartz crystal blanks for singulation
CN101471271A (en) * 2007-12-27 2009-07-01 深圳市方大国科光电技术有限公司 Rapid detection method for gallium nitride epitaxial slice
CN102468233A (en) * 2010-11-05 2012-05-23 稳懋半导体股份有限公司 Fabrication method for dicing of semiconductor wafers using laser cutting techniques

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