CN203398124U - Thinned flexible three-junction gallium arsenide solar cell - Google Patents
Thinned flexible three-junction gallium arsenide solar cell Download PDFInfo
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- CN203398124U CN203398124U CN201320474536.8U CN201320474536U CN203398124U CN 203398124 U CN203398124 U CN 203398124U CN 201320474536 U CN201320474536 U CN 201320474536U CN 203398124 U CN203398124 U CN 203398124U
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- epitaxial wafer
- gallium arsenide
- solar cell
- junction gallium
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
Abstract
The utility model relates to a thinned flexible three-junction gallium arsenide solar cell, comprising a GaInP/GaAs/Ge three-junction gallium arsenide epitaxial wafer, a lower electrode on the backlight surface of the epitaxial wafer, an upper electrode of a sensitive surface of the epitaxial wafer and an antireflection film on the upper electrode. The thinned flexible three-junction gallium arsenide solar cell is characterized in that the thickness of the epitaxial wafer is thinned to below 0.14mm; and the upper electrode is provided with comb-shaped dense grid-like grid lines. According to the thinned flexible three-junction gallium arsenide solar cell, as a thinned substrate is adopted, the thickness of the epitaxial wafer is thinned to below 0.14mm; as the thickness of the cell is reduced, the weight of the cell is effectively lowered, the power/weight of the solar cell is greatly improved, the flexibility of the cell is improved and the service life of the cell is prolonged; and as the upper electrode adopts the comb-shaped dense grid-like grid lines, the sum of shading power loss and power loss of series resistors is effectively reduced, and the photoelectric conversion efficiency of the cell is raised.
Description
Technical field
The utility model belongs to technical field of solar batteries, particularly relates to the flexible three-junction gallium arsenide solar cell of a kind of attenuate.
Background technology
Along with the development of gallium arsenide solar cell technology, gallium arsenide solar cell becomes owing to having high-photoelectric transformation efficiency and good reliability the high performance and long service life of new generation space main power source gaining great popularity gradually.At the beginning of the eighties in last century, aerospace craft space main power source especially moonlet space power system system starts to apply gallium arsenide solar cell, and GaAs assembly increases day by day in the application percentage in space power system field, surpasses 90% at present.Gallium arsenide solar cell has become the focus of application and the research of area of solar cell.
At present, three-junction gallium arsenide solar cell has relied on the advantages such as high-photoelectric transformation efficiency, high radiation preventing ability substantially to replace unijunction gallium arsenide solar cell.Although the raw material that three-junction gallium arsenide solar cell and unijunction gallium arsenide solar cell adopt are basic identical, but because three-junction gallium arsenide solar cell has three P-N knots, epitaxial structure is complicated, and each layer epitaxially grown quality all directly affects the performance of whole gallium arsenide solar cell, and because three-junction gallium arsenide cell thickness is large, power/weight is low, flexibility is poor, and battery is low.
Summary of the invention
In order to solve, the technical problem existing in known technology provides thin thickness to the utility model, lightweight, power/weight is high, pliability is good, long service life, the solid and reliable flexible three-junction gallium arsenide solar cell of attenuate.
The utility model, for solving the technical problem existing in known technology, adopts following technical scheme:
The flexible three-junction gallium arsenide solar cell of attenuate, comprise GaInP/GaAs/Ge three-junction gallium arsenide epitaxial wafer, top electrode on bottom electrode on epitaxial wafer shady face, epitaxial wafer sensitive surface and the antireflective coating on top electrode, be characterized in: the thickness thin of described epitaxial wafer is to 0.14mm; On described top electrode, be shaped with the close grid shape of pectination grid line.
The utility model can also adopt following technical measures:
The described very Au-Ge-Ag-Au structure top electrode that powers on; Described bottom electrode is Au-Ge-Ag structure bottom electrode.
Described antireflective coating is TiO
2/ Al
2o
3antireflective coating.
The thickness of described top electrode is that the Au of 50nm is, the Ag of the Ge of 20nm, 300nm and the Au of 50nm; The thickness of described bottom electrode is that the Au of 50nm is, the Ag of the Ge of 30nm and 4000nm.
The thickness of described antireflective coating is the TiO of 60nm
2al with 90nm
2o
3.
The advantage the utlity model has and good effect:
1, the utility model has adopted the substrate of attenuate type, and making epitaxial wafer thickness is below 0.14mm, owing to having reduced the thickness of battery, effectively reduce the weight of battery, greatly improve the power/weight of solar cell, and improved the pliability of battery, extended the useful life of battery; Because top electrode has adopted the close grid shape of pectination grid line structure, effectively reduced shading power loss and series resistance power loss sum, improved the photoelectric conversion efficiency of battery.
2, the utility model adopts Au-Ge-Ag-Au and Au-Ge-Ag as the upper and lower electrode material system of collecting photogenerated current, forms good ohmic contact with battery semi-conducting material, has effectively improved solderability and the firmness of upper and lower electrode.
3, the utility model adopts TiO
2, Al
2o
3material, as antireflective coating, can obtain good anti-reflective effect at short-wave band, and the effectively minimum reflectivity of battery surface, makes the gain of short circuit current reach the highest.
Accompanying drawing explanation
Fig. 1 is that the flexible three-junction gallium arsenide solar battery structure of the utility model attenuate master looks schematic diagram;
Fig. 2 is the schematic top plan view of top electrode in Fig. 1;
Fig. 3 is the utility model battery surface reflectance curve figure.
Label in figure is respectively: 1-bottom electrode; 2-epitaxial wafer; 3-top electrode; 4-antireflective coating; 5-grid line.
Embodiment
For further disclosing summary of the invention of the present utility model, Characteristic, especially exemplified by following instance and by reference to the accompanying drawings 1-3 be elaborated as follows:
The flexible three-junction gallium arsenide solar cell of attenuate, comprises GaInP/GaAs/Ge three-junction gallium arsenide epitaxial wafer, the top electrode on the bottom electrode on epitaxial wafer shady face, epitaxial wafer sensitive surface and the antireflective coating on top electrode.
Innovative point of the present utility model is:
The thickness thin of described epitaxial wafer is to 0.14mm; On described top electrode, be shaped with the close grid shape of pectination grid line.
Innovative point of the present utility model also comprises:
The described very Au-Ge-Ag-Au structure top electrode that powers on; Described bottom electrode is Au-Ge-Ag structure bottom electrode.
Described antireflective coating is TiO
2/ Al
2o
3antireflective coating.
The thickness of described top electrode is that the Au of 50nm is, the Ag of the Ge of 20nm, 300nm and the Au of 50nm; The thickness of described bottom electrode is that the Au of 50nm is, the Ag of the Ge of 30nm and 4000nm.
The thickness of described antireflective coating is the TiO of 60nm
2al with 90nm
2o
3.
The manufacturing process of the flexible three-junction gallium arsenide solar cell of the utility model attenuate:
(1) attenuate substrate
Select and buy the GaInP/GaAs/Ge three-junction gallium arsenide epitaxial wafer that thickness is 0.18mm ± 0.02mm.
As shown in Figure 1, the sensitive surface that the upper aspect of epitaxial wafer 2 is epitaxial wafer, with glue spreader, at the sensitive surface spin coating PZ2731 of epitaxial wafer type glue, the baking oven of putting into 80～100 ℃ toasts 20～60s, and the sensitive surface of epitaxial wafer is protected; Then epitaxial wafer is put into the solution that ratio is hydrogen peroxide: hydrofluoric acid=200ml:100ml, corrosion thinning substrate, makes epitaxial wafer thickness to 0.14mm, after taking out, uses washed with de-ionized water 2～3 times, completes the attenuate to substrate on epitaxial wafer; Then put into acetone and soak 5～10min, washed with de-ionized water 2～3 times, dries with drier, completes the process of removing photoresist.Owing to having reduced the thickness of substrate on epitaxial wafer, alleviated the weight of epitaxial wafer, improved the pliability of epitaxial wafer, battery is improved.
(2) photoetching epitaxial wafer
Use glue spreader after the sensitive surface resist coating of epitaxial wafer the good epitaxial wafer of attenuate, the baking oven of putting into 60～100 ℃ toasts 20～40s.The good photolithography plate of graphic making according to the close grid shape of pectination in Fig. 2 grid line, carries out photoetching by mask aligner to sensitive surface, and the photoetching time is 2～6s; Then the good epitaxial wafer of photoetching being put into developer solution develops after 20～35s; In deionized water, clean 6～8 times, with drier, dry, on the sensitive surface of epitaxial wafer, form the close grid shape of pectination grid line groove 5 figures as evaporation top electrode;
(3) evaporation top electrode
According to volume ratio sulfuric acid: hydrogen peroxide=3:1 makes corrosive liquid, the good epitaxial wafer of photoetching is put into corrosive liquid and corrodes 25～45s, after taking out by washed with de-ionized water 2～3 times; The hydrochloric acid solution of again epitaxial wafer being put into concentration 20% corrodes 20～30s, and washed with de-ionized water 2～3 times dries with drier, corrodes the impurity in grid line groove on the sensitive surface that washes epitaxial wafer.
Epitaxial wafer is packed in automatic evaporation equipment, in the crucible of equipment, feed, set automatic evaporation process, in the close grid shape of epitaxial wafer sensitive surface upper comb shape grid line groove successively the Au of evaporation thickness 50nm, the Ag of the Ge of 20nm, 300nm and the Au of 50nm, taking-up epitaxial wafer is put into acetone and is soaked 5～10min, washed with de-ionized water 2～3 times, with drier, dry, remove photoresist, on the sensitive surface of epitaxial wafer, form the top electrode of Au-Ge-Ag-Au shown in Fig. 13, the surface of top electrode forms the close grid shape of the pectination grid line shown in Fig. 2;
(4) evaporation bottom electrode
The top electrode epitaxial wafer that evaporation is good is put into glue spreader, at sensitive surface and top electrode, coat PZ218 type glue, in the baking oven of 60～110 ℃, toast 40～60s, sensitive surface and top electrode are protected; It is that 10～20% hydrofluoric acid solution corrodes 20～40s that epitaxial wafer is put into concentration, and washed with de-ionized water 2～3 times, dries with drier, and corrosion washes the impurity of epitaxial wafer shady face;
Epitaxial wafer is packed in the automatic evaporation equipment of UZLV type, in the crucible of equipment, feeds, set automatic evaporation process, at the shady face of the epitaxial wafer successively Au of evaporation thickness 50nm, the Ag of the Ge of 30nm and 4000nm makes the Au-Ge-Ag bottom electrode 1 shown in Fig. 1; Epitaxial wafer is put into acetone and soak 5～10min, washed with de-ionized water 2～3 times, dries with drier, removes the glue of sensitive surface and upper electrode surface;
(5) scribing
The epitaxial wafer of the good bottom electrode of evaporation is put into automatic scribing machine, according to the scribing of graphic package shown in Fig. 2, go out the utility model battery.
(6) evaporation antireflective coating
Battery after scribing is put on the evaporation disc of high vacuum coating unit, by TiO
2and Al
2o
3be respectively charged in crucible, close the door for vacuum chamber of high vacuum coating unit, high vacuum coating unit is carried out to vacuum degree and be greater than 5 * 10
-4pa vacuumizes, at the top electrode successively thick TiO of evaporation 60nm
2with the thick Al of 90nm
2o
3evaporation, completes TiO in Fig. 1
2/ Al
2o
3the evaporate process of antireflective coating 4; Complete the flexible three-junction gallium arsenide solar cell of the utility model attenuate manufacturing process.Through battery surface is carried out to reflectance test, obtained as shown in Figure 3 well anti-reflective effect.
Although by reference to the accompanying drawings preferred embodiment of the present utility model is described above; but the utility model is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; be not restrictive; those of ordinary skill in the art is under enlightenment of the present utility model; not departing from the scope situation that the utility model aim and claim protect, can also make a lot of forms.Within these all belong to protection range of the present utility model.
Claims (5)
1. the flexible three-junction gallium arsenide solar cell of attenuate, comprise GaInP/GaAs/Ge three-junction gallium arsenide epitaxial wafer, top electrode on bottom electrode on epitaxial wafer shady face, epitaxial wafer sensitive surface and the antireflective coating on top electrode, is characterized in that: the thickness thin of described epitaxial wafer is to 0.14mm; On described top electrode, be shaped with the close grid shape of pectination grid line.
2. the flexible three-junction gallium arsenide solar cell of attenuate according to claim 1, is characterized in that: described in the very Au-Ge-Ag-Au structure top electrode that powers on; Described bottom electrode is Au-Ge-Ag structure bottom electrode.
3. the flexible three-junction gallium arsenide solar cell of attenuate according to claim 1, is characterized in that: described antireflective coating is TiO
2/ Al
2o
3antireflective coating.
4. the flexible three-junction gallium arsenide solar cell of attenuate according to claim 2, is characterized in that: the Au that the thickness of described top electrode is 50nm, the Ag of the Ge of 20nm, 300nm and the Au of 50nm; The thickness of described bottom electrode is that the Au of 50nm is, the Ag of the Ge of 30nm and 4000nm.
5. the flexible three-junction gallium arsenide solar cell of attenuate according to claim 3, is characterized in that: the TiO that the thickness of described antireflective coating is 60nm
2al with 90nm
2o
3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320474536.8U CN203398124U (en) | 2013-08-05 | 2013-08-05 | Thinned flexible three-junction gallium arsenide solar cell |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201320474536.8U CN203398124U (en) | 2013-08-05 | 2013-08-05 | Thinned flexible three-junction gallium arsenide solar cell |
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|---|---|
| CN203398124U true CN203398124U (en) | 2014-01-15 |
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ID=49909635
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| CN201320474536.8U Expired - Lifetime CN203398124U (en) | 2013-08-05 | 2013-08-05 | Thinned flexible three-junction gallium arsenide solar cell |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489664A (en) * | 2015-12-03 | 2016-04-13 | 中国电子科技集团公司第十八研究所 | Preparation method of solar cell |
| CN108321249A (en) * | 2017-12-27 | 2018-07-24 | 中国电子科技集团公司第十八研究所 | A kind of local reduction's gallium arsenide solar cell preparation method |
| CN108336179A (en) * | 2017-12-27 | 2018-07-27 | 中国电子科技集团公司第十八研究所 | A kind of flexible space three-junction solar battery antireflective coating preparation method |
-
2013
- 2013-08-05 CN CN201320474536.8U patent/CN203398124U/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105489664A (en) * | 2015-12-03 | 2016-04-13 | 中国电子科技集团公司第十八研究所 | Preparation method of solar cell |
| CN108321249A (en) * | 2017-12-27 | 2018-07-24 | 中国电子科技集团公司第十八研究所 | A kind of local reduction's gallium arsenide solar cell preparation method |
| CN108336179A (en) * | 2017-12-27 | 2018-07-27 | 中国电子科技集团公司第十八研究所 | A kind of flexible space three-junction solar battery antireflective coating preparation method |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20221111 Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Energy Co.,Ltd. Address before: 300384 No. 6, Haitai Huake 7th Road, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: The 18th Research Institute of China Electronics Technology Group Corporation |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee after: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee after: CETC Blue Sky Technology Co.,Ltd. Address before: Room 106-107, 109-136, 140-158, 201-252, Solar Cell and Controller Plant, No. 6, Huake 7th Road, Haitai, Huayuan Industrial Zone (outside the ring), Binhai New Area, Tianjin, 300384 Patentee before: TIANJIN HENGDIAN SPACE POWER SOURCE Co.,Ltd. Patentee before: CETC Energy Co.,Ltd. |
|
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20140115 |