WO2020258989A1 - Double-sided coupling photovoltaic cell system based on reflection and condensation - Google Patents
Double-sided coupling photovoltaic cell system based on reflection and condensation Download PDFInfo
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- 230000008878 coupling Effects 0.000 title claims abstract description 13
- 238000010168 coupling process Methods 0.000 title claims abstract description 13
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 13
- 230000005494 condensation Effects 0.000 title abstract 2
- 238000009833 condensation Methods 0.000 title abstract 2
- 239000004065 semiconductor Substances 0.000 claims description 9
- 238000010248 power generation Methods 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 230000003595 spectral effect Effects 0.000 claims description 3
- 230000002708 enhancing effect Effects 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 7
- 230000008901 benefit Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910003437 indium oxide Inorganic materials 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000000985 reflectance spectrum Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
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Definitions
- the invention belongs to the field of semiconductor devices, and in particular relates to a double-sided coupling photovoltaic cell system based on reflection and concentration.
- photovoltaic cells As a device that can convert solar radiation energy into electrical energy, photovoltaic cells have the advantages of safety, environmental protection, and less restriction by geographical factors. Since the development of the photovoltaic cell industry, various types of photovoltaic utilization devices such as crystalline silicon cells, gallium arsenide cells, copper indium gallium selenium cells, cadmium telluride cells, dye-sensitized cells, and perovskite cells have been born. The difference between the production process and the band used plays their respective roles. After a long period of development, the efficiency of photovoltaic cells with a single bandgap value has been greatly improved, and the cell efficiency is gradually approaching the limit efficiency of a single bandgap value.
- a battery with a single forbidden band value has a high utilization rate of photons near the forbidden band value and a low utilization rate of photons far away from the forbidden band value.
- the band gap value of a silicon battery is about 1.1 eV, which can be used
- the wavelength of sunlight is 300nm-1100nm, but its utilization rate of short-wavelength photons is low, which causes some energy waste and limits the improvement of photoelectric conversion efficiency.
- the coupling of multi-band gap photovoltaic cells can take advantage of the response characteristics of each sub-cell to different wavelength bands, so that the incident sunlight can be efficiently used in each wavelength band, thereby improving the photoelectric conversion efficiency.
- the coupling between multi-band gap photovoltaic cells is mostly in the form of stacked layers, that is, the sunlight that is not absorbed by the wide band gap photovoltaic cell on the upper layer is transmitted to the narrow band gap photovoltaic cell on the lower layer to realize sub-band utilization.
- this type of combination makes the system unable to use the sunlight reflected on the surface of the upper wide band gap photovoltaic cell, resulting in waste of energy and limiting the improvement of system efficiency.
- the lower-layer narrow-band-gap photovoltaic cell only absorbs part of the energy, resulting in a decrease in carrier concentration, which will cause the performance of the lower-layer narrow-band-gap photovoltaic cell to deteriorate to a certain extent, and cannot fully utilize the advantages of the multi-band-gap coupling cell.
- the purpose of the present invention is to provide a double-sided coupling photovoltaic cell system based on reflection and concentration to achieve high-efficiency multi-band gap photovoltaic cell photoelectric conversion efficiency.
- a double-sided coupling photovoltaic cell system based on reflection and concentration is composed of one or more structural units.
- Each structural unit is composed of a double-sided photovoltaic cell and two reflective photovoltaic cells.
- the two reflective photovoltaic cells are located in On both sides of the double-sided photovoltaic cell, the light-receiving surface of the reflective photovoltaic cell faces the double-sided photovoltaic cell, and there is an angle between the reflective photovoltaic cell and the double-sided photovoltaic cell, so that the incident light can illuminate after being reflected by the reflective photovoltaic cell To the two sides of the bifacial photovoltaic cell.
- the included angle between the reflective photovoltaic cell and the double-sided photovoltaic cell is any angle greater than 0° and less than 90°.
- the included angles between the two reflective photovoltaic cells and the double-sided photovoltaic cells are the included angle A and the included angle B, respectively, and the included angle A and the included angle B are the same or different.
- the bifacial photovoltaic cell is a cell with a bifacial photovoltaic power generation capability.
- the two sides of the double-sided photovoltaic cell share the same semiconductor active layer when receiving light and generating electricity.
- the reflective photovoltaic cell is a cell with at least one-side light-receiving power generation capability.
- the reflective photovoltaic cell is a cell that uses one or more of metal electrodes or reflectance-increasing films for spectral reflection.
- the band gap of the semiconductor active layer of the double-sided photovoltaic cell is smaller than the band gap of the semiconductor active layer of the reflective photovoltaic cell.
- the battery system proposed by the present invention solves the performance degradation of the narrow band gap battery due to the decrease of carrier concentration in the traditional multi-band gap photovoltaic cell combination, and can more efficiently use sunlight of different wavelength bands and make full use of
- the performance of multi-band gap photovoltaic cell system improves the photoelectric conversion efficiency.
- the battery system has a simple structure and is easy to implement.
- Figure 1 is a schematic diagram of a structural unit of the present invention
- Figure 2 is a schematic diagram of the structure of a double-sided photovoltaic cell selected in the present invention.
- FIG. 3 is a schematic diagram of the reflective battery structure selected in the present invention.
- Figure 4 is the reflectance spectrum of the perovskite battery of the present invention in the system
- Fig. 5 is the I-V curve of the double-sided photovoltaic cell selected in the present invention under different incident conditions
- Figure 6 is the I-V curve of each battery in the operation of the battery system implemented in the present invention.
- the double-sided coupling photovoltaic cell system based on reflection and concentration of the present invention is composed of one or more structural units, as shown in Figure 1 as a structural unit, each structural unit consists of a double-sided photovoltaic cell 1 and two Two reflective photovoltaic cells 2 are located on both sides of the double-sided photovoltaic cell 1.
- the light-receiving surface of the reflective photovoltaic cell 2 faces the double-sided photovoltaic cell 1, the reflective photovoltaic cell 2 and the double-sided photovoltaic cell
- the included angle between the reflective photovoltaic cell 2 and the double-sided photovoltaic cell 1 is any angle greater than 0° and less than 90°.
- the included angles between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are the included angle A and the included angle B, respectively.
- the included angle A and the included angle B are independent of each other, and their sizes can be the same or different.
- the double-sided photovoltaic cell 1 is a battery with double-sided light-receiving and power generation capabilities; the double-sided photovoltaic cell 1 shares the same semiconductor active layer when light-receiving and generating power on both sides.
- the reflective photovoltaic cell 2 is a cell with at least one-sided light-receiving power generation capability; the reflective photovoltaic cell 2 is a cell that uses one or more of metal electrodes or reflective enhancement films for spectral reflection.
- the band gap of the semiconductor active layer of the double-sided photovoltaic cell 1 is smaller than the band gap of the semiconductor active layer of the reflective photovoltaic cell 2.
- the double-sided photovoltaic cell 1 uses a double-sided silicon-based heterojunction cell. As shown in FIG. 2, the cell has a double-sided pyramid suede structure.
- Amorphous silicon is used as the passivation layer i
- p- ⁇ -Si:H is used as the hole selection layer p
- n- ⁇ -Si:H is used as the electron selection layer n
- indium tin oxide (ITO) material is used as the transparent electrode TE uses Ag material as the metal grid electrode
- reflective photovoltaic cell 2 uses perovskite battery, as shown in Figure 3, the battery uses tungsten-doped indium oxide (IWO) material as the transparent conductive oxide layer TCO, and uses SnO 2
- the material is used as the electron transport layer ETL
- the FACsPbIBr material is used as the perovskite layer PSK
- the 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9' -Spiro-OMeTAD material is used as the hole transport layer HTL
- Au is used as the metal electrode M.
- the included angle A and the included angle B between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are preferably 45°.
- the reflectance curve of the perovskite battery using IWO and commercial conductive oxide as the transparent electrode is shown in Figure 4.
- the use of IWO material as the transparent conductive oxide in the present invention can greatly improve the perovskite battery.
- the reflectivity in the infrared band (750 ⁇ 1200nm) (increased from 63.4% to 80.5%) can provide more energy to the silicon cell; the volt-ampere characteristic curve of the silicon cell reflected by the perovskite cell under different incident conditions
- the open circuit voltage of the bifacial silicon-based heterojunction cell is effectively improved, making the efficiency increase from 7.85% on both sides to 8.67%; when the system is working ,
- the efficiency of the perovskite cell is 16.81%, the efficiency of the double-sided silicon-based heterojunction cell is 8.67%, and the total system efficiency is 25.48%.
Abstract
Disclosed in the present invention is a double-sided coupling photovoltaic cell system based on reflection and condensation, which is composed of one or more structural units. Each structural unit consists of a double-sided photovoltaic cell and two reflection-type photovoltaic cells; the two reflection-type photovoltaic cells are respectively positioned on two sides of the double-sided photovoltaic cell; light receiving surfaces of the reflection-type photovoltaic cells face the double-sided photovoltaic cell; an included angle is formed between each reflection-type photovoltaic cell and the double-sided photovoltaic cell, so that incident light can irradiate the two surfaces of the double-sided photovoltaic cell after being reflected by the reflection-type photovoltaic cells. The present invention solves the problem of performance attenuation of a narrow band gap cell caused by reduced carrier concentration in a conventional multi-band gap photovoltaic cell combination, can more effectively utilize sunlight of different wave bands, fully exerts the performance of a multi-band gap photovoltaic cell system, and improves the photoelectric conversion efficiency. The battery system is simple in structure and easy to achieve.
Description
本发明属于半导体器件领域，具体涉及一种基于反射聚光的双面耦合光伏电池系统。The invention belongs to the field of semiconductor devices, and in particular relates to a double-sided coupling photovoltaic cell system based on reflection and concentration.
光伏电池作为一种可以将太阳辐射能转化为电能的一种器件，具有安全、环保、受地域因素限制少等优势。光伏电池行业发展以来，诞生了晶硅电池、砷化镓电池、铜铟镓硒电池、碲化镉电池、染料敏化电池和钙钛矿电池等多种类型的光伏利用器件，各种电池由于其制作工艺和利用波段的区别发挥着各自的作用。经过长时间的发展，单一禁带值的光伏电池的效率已经得到了大幅的提升，电池效率逐渐接近单一禁带值的极限效率。然而，单一禁带值的电池对禁带值附近的光子利用率高而对远离禁带值的光子利用率较低，以硅电池为例，硅电池的禁带值约为1.1eV，可利用波段为300nm-1100nm的太阳光，但其对短波段光子的利用率偏低，造成了一部分能量的浪费，限制了光电转换效率的提高。多带隙光伏电池的耦合可以利用各个子电池对不同波段的响应特点，使入射的太阳光在各个波段都能得到高效的利用，从而可以提高光电转化效率。As a device that can convert solar radiation energy into electrical energy, photovoltaic cells have the advantages of safety, environmental protection, and less restriction by geographical factors. Since the development of the photovoltaic cell industry, various types of photovoltaic utilization devices such as crystalline silicon cells, gallium arsenide cells, copper indium gallium selenium cells, cadmium telluride cells, dye-sensitized cells, and perovskite cells have been born. The difference between the production process and the band used plays their respective roles. After a long period of development, the efficiency of photovoltaic cells with a single bandgap value has been greatly improved, and the cell efficiency is gradually approaching the limit efficiency of a single bandgap value. However, a battery with a single forbidden band value has a high utilization rate of photons near the forbidden band value and a low utilization rate of photons far away from the forbidden band value. Taking a silicon battery as an example, the band gap value of a silicon battery is about 1.1 eV, which can be used The wavelength of sunlight is 300nm-1100nm, but its utilization rate of short-wavelength photons is low, which causes some energy waste and limits the improvement of photoelectric conversion efficiency. The coupling of multi-band gap photovoltaic cells can take advantage of the response characteristics of each sub-cell to different wavelength bands, so that the incident sunlight can be efficiently used in each wavelength band, thereby improving the photoelectric conversion efficiency.
目前，多带隙光伏电池之间的耦合大多为上下叠层的形式，即将位于上层的宽带隙光伏电池未吸收的太阳光透射到位于下层的窄带隙光伏电池中，实现分波段利用。然而，这种形式的结合使得系统无法利用上层宽带隙光伏电池表面反射的太阳光，造成能量的浪费，限制了系统效率的提升。此外，下层窄带隙光伏电池由于仅吸收了部分能量，导致载流子浓度下降，会在一定程度上造成下层窄带隙光伏电池的性能衰减，无法充分发挥多带隙耦合电池的优势。At present, the coupling between multi-band gap photovoltaic cells is mostly in the form of stacked layers, that is, the sunlight that is not absorbed by the wide band gap photovoltaic cell on the upper layer is transmitted to the narrow band gap photovoltaic cell on the lower layer to realize sub-band utilization. However, this type of combination makes the system unable to use the sunlight reflected on the surface of the upper wide band gap photovoltaic cell, resulting in waste of energy and limiting the improvement of system efficiency. In addition, the lower-layer narrow-band-gap photovoltaic cell only absorbs part of the energy, resulting in a decrease in carrier concentration, which will cause the performance of the lower-layer narrow-band-gap photovoltaic cell to deteriorate to a certain extent, and cannot fully utilize the advantages of the multi-band-gap coupling cell.
发明内容Summary of the invention
为了更高效地利用太阳光，本发明的目的是提供一种基于反射聚光的双面耦合光伏电池系统，以实现高效的多带隙光伏电池的光电转换效率。In order to use sunlight more efficiently, the purpose of the present invention is to provide a double-sided coupling photovoltaic cell system based on reflection and concentration to achieve high-efficiency multi-band gap photovoltaic cell photoelectric conversion efficiency.
为实现上述目的，本发明采用的技术方案为：In order to achieve the above objectives, the technical solutions adopted by the present invention are:
一种基于反射聚光的双面耦合光伏电池系统，由一个或多个结构单元构成，每个结构单元由一个双面光伏电池和两个反射式光伏电池组成，两个反射式光伏电池分别位于双面光伏电池的两侧，所述反射式光伏电池的受光面朝向双面光伏电池，反射式光伏电池与双面光伏电池之间存在夹角，使入射光经反射式光伏电池反射后能够照射到双面光 伏电池的两个面。A double-sided coupling photovoltaic cell system based on reflection and concentration is composed of one or more structural units. Each structural unit is composed of a double-sided photovoltaic cell and two reflective photovoltaic cells. The two reflective photovoltaic cells are located in On both sides of the double-sided photovoltaic cell, the light-receiving surface of the reflective photovoltaic cell faces the double-sided photovoltaic cell, and there is an angle between the reflective photovoltaic cell and the double-sided photovoltaic cell, so that the incident light can illuminate after being reflected by the reflective photovoltaic cell To the two sides of the bifacial photovoltaic cell.
进一步的，所述反射式光伏电池与双面光伏电池之间的夹角为大于0°且小于90°的任意角度。Further, the included angle between the reflective photovoltaic cell and the double-sided photovoltaic cell is any angle greater than 0° and less than 90°.
进一步的，所述两个反射式光伏电池与双面光伏电池之间的夹角分别为夹角A和夹角B，夹角A和夹角B的大小相同或不同。Further, the included angles between the two reflective photovoltaic cells and the double-sided photovoltaic cells are the included angle A and the included angle B, respectively, and the included angle A and the included angle B are the same or different.
进一步的，所述双面光伏电池为具有双面受光发电能力的电池。Further, the bifacial photovoltaic cell is a cell with a bifacial photovoltaic power generation capability.
进一步的，所述双面光伏电池的双面受光发电时共用同一半导体活性层。Further, the two sides of the double-sided photovoltaic cell share the same semiconductor active layer when receiving light and generating electricity.
进一步的，所述反射式光伏电池为至少具有单面受光发电能力的电池。Further, the reflective photovoltaic cell is a cell with at least one-side light-receiving power generation capability.
进一步的，所述反射式光伏电池为利用金属电极或增反膜中的一种或多种进行光谱反射的电池。Further, the reflective photovoltaic cell is a cell that uses one or more of metal electrodes or reflectance-increasing films for spectral reflection.
进一步的，所述双面光伏电池的半导体活性层的禁带宽度小于反射式光伏电池的半导体活性层的禁带宽度。Further, the band gap of the semiconductor active layer of the double-sided photovoltaic cell is smaller than the band gap of the semiconductor active layer of the reflective photovoltaic cell.
有益效果：本发明所提出的电池系统，解决了传统多带隙光伏电池组合中，窄带隙电池由于载流子浓度降低带来的性能衰减，可更高效地利用不同波段的太阳光，充分发挥多带隙光伏电池系统的性能，提升光电转换效率。且该电池系统结构简单，易于实现。Beneficial effects: The battery system proposed by the present invention solves the performance degradation of the narrow band gap battery due to the decrease of carrier concentration in the traditional multi-band gap photovoltaic cell combination, and can more efficiently use sunlight of different wavelength bands and make full use of The performance of multi-band gap photovoltaic cell system improves the photoelectric conversion efficiency. In addition, the battery system has a simple structure and is easy to implement.
图1为本发明的一个结构单元示意图；Figure 1 is a schematic diagram of a structural unit of the present invention;
图2为本发明选用的双面光伏电池结构示意图；Figure 2 is a schematic diagram of the structure of a double-sided photovoltaic cell selected in the present invention;
图3为本发明选用的反射式电池结构示意图；3 is a schematic diagram of the reflective battery structure selected in the present invention;
图4为本发明钙钛矿电池在系统中的反射光谱；Figure 4 is the reflectance spectrum of the perovskite battery of the present invention in the system;
图5为本发明选用的双面光伏电池在不同入射情况下的I-V曲线；Fig. 5 is the I-V curve of the double-sided photovoltaic cell selected in the present invention under different incident conditions;
图6为本发明实施的电池系统工作中各电池I-V曲线；Figure 6 is the I-V curve of each battery in the operation of the battery system implemented in the present invention;
图中，1-双面光伏电池，2-反射式光伏电池。In the figure, 1-sided photovoltaic cell, 2-reflective photovoltaic cell.
下面结合附图对本发明做更进一步的解释。The present invention will be further explained below in conjunction with the drawings.
本发明的一种基于反射聚光的双面耦合光伏电池系统，由一个或多个结构单元构成，如图1所示为一个结构单元，每个结构单元由一个双面光伏电池1和两个反射式光伏电池2组成，两个反射式光伏电池2分别位于双面光伏电池1的两侧，反射式光伏电池2的受光面朝向双面光伏电池1，反射式光伏电池2与双面光伏电池1之间存在夹角，分 别为夹角A和夹角B，使入射光经反射式光伏电池2反射后能够照射到双面光伏电池1的两个面。The double-sided coupling photovoltaic cell system based on reflection and concentration of the present invention is composed of one or more structural units, as shown in Figure 1 as a structural unit, each structural unit consists of a double-sided photovoltaic cell 1 and two Two reflective photovoltaic cells 2 are located on both sides of the double-sided photovoltaic cell 1. The light-receiving surface of the reflective photovoltaic cell 2 faces the double-sided photovoltaic cell 1, the reflective photovoltaic cell 2 and the double-sided photovoltaic cell There is an included angle between 1, which is the included angle A and the included angle B, so that the incident light can be irradiated to the two sides of the double-sided photovoltaic cell 1 after being reflected by the reflective photovoltaic cell 2.
反射式光伏电池2与双面光伏电池1之间的夹角为大于0°且小于90°的任意角度。两个反射式光伏电池2与双面光伏电池1之间的夹角分别为夹角A和夹角B，夹角A和夹角B相互独立，其大小可以相同，也可以不同。The included angle between the reflective photovoltaic cell 2 and the double-sided photovoltaic cell 1 is any angle greater than 0° and less than 90°. The included angles between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are the included angle A and the included angle B, respectively. The included angle A and the included angle B are independent of each other, and their sizes can be the same or different.
其中，双面光伏电池1为具有双面受光发电能力的电池；双面光伏电池1的双面受光发电时共用同一半导体活性层。反射式光伏电池2为至少具有单面受光发电能力的电池；反射式光伏电池2为利用金属电极或增反膜中的一种或多种进行光谱反射的电池。Among them, the double-sided photovoltaic cell 1 is a battery with double-sided light-receiving and power generation capabilities; the double-sided photovoltaic cell 1 shares the same semiconductor active layer when light-receiving and generating power on both sides. The reflective photovoltaic cell 2 is a cell with at least one-sided light-receiving power generation capability; the reflective photovoltaic cell 2 is a cell that uses one or more of metal electrodes or reflective enhancement films for spectral reflection.
双面光伏电池1的半导体活性层的禁带宽度小于反射式光伏电池2的半导体活性层的禁带宽度。The band gap of the semiconductor active layer of the double-sided photovoltaic cell 1 is smaller than the band gap of the semiconductor active layer of the reflective photovoltaic cell 2.
实施例:Example:
本实施例的基于反射聚光的双面耦合光伏电池系统中，双面光伏电池1选用双面硅基异质结电池，如图2所示，该电池具有双面金字塔绒面结构，采用本征非晶硅作为钝化层i，采用p-α-Si:H作为空穴选择层p，采用n-α-Si:H作为电子选择层n，采用氧化铟锡(ITO)材料作为透明电极TE，采用Ag材料作为金属栅线电极；反射式光伏电池2选用钙钛矿电池，如图3所示，该电池采用掺钨氧化铟(IWO)材料作为透明导电氧化物层TCO，采用SnO
2材料作为电子传输层ETL，采用FACsPbIBr材料作为钙钛矿层PSK，采用2,2',7,7'-四[N,N-二(4-甲氧基苯基)氨基]-9,9'-螺二芴(Spiro-OMeTAD)材料作为空穴传输层HTL，采用Au作为金属电极M。
In the double-sided coupled photovoltaic cell system based on reflection and concentration of this embodiment, the double-sided photovoltaic cell 1 uses a double-sided silicon-based heterojunction cell. As shown in FIG. 2, the cell has a double-sided pyramid suede structure. Amorphous silicon is used as the passivation layer i, p-α-Si:H is used as the hole selection layer p, n-α-Si:H is used as the electron selection layer n, and indium tin oxide (ITO) material is used as the transparent electrode TE uses Ag material as the metal grid electrode; reflective photovoltaic cell 2 uses perovskite battery, as shown in Figure 3, the battery uses tungsten-doped indium oxide (IWO) material as the transparent conductive oxide layer TCO, and uses SnO 2 The material is used as the electron transport layer ETL, the FACsPbIBr material is used as the perovskite layer PSK, and the 2,2',7,7'-tetra[N,N-bis(4-methoxyphenyl)amino]-9,9' -Spiro-OMeTAD material is used as the hole transport layer HTL, and Au is used as the metal electrode M.
本实施例中，两个反射式光伏电池2与双面光伏电池1之间的夹角A和夹角B均优选为45°。In this embodiment, the included angle A and the included angle B between the two reflective photovoltaic cells 2 and the double-sided photovoltaic cell 1 are preferably 45°.
在本实施例条件下，分别使用IWO和商业导电氧化物作为透明电极的钙钛矿电池的反射率曲线如图4所示，本发明采用IWO材料作为透明导电氧化物可大幅提高钙钛矿电池在红外波段(750～1200nm)的反射率(从63.4％提升至80.5％)，可以给硅电池提供更多能量；经钙钛矿电池反射后的硅电池，在不同入射情况的伏安特性曲线如图5所示，当双面同时接受反射光照射时，双面硅基异质结电池的开路电压得到了有效提升，使得效率从双面平均的7.85％提升至8.67％；当系统工作时，钙钛矿电池效率为16.81％，双面硅基异质结电池效率为8.67％，系统总效率为25.48％，相对于单独工作的双面硅基异质结电池(效率21.1％)，效率提升了4.38％Under the conditions of this embodiment, the reflectance curve of the perovskite battery using IWO and commercial conductive oxide as the transparent electrode is shown in Figure 4. The use of IWO material as the transparent conductive oxide in the present invention can greatly improve the perovskite battery. The reflectivity in the infrared band (750～1200nm) (increased from 63.4% to 80.5%) can provide more energy to the silicon cell; the volt-ampere characteristic curve of the silicon cell reflected by the perovskite cell under different incident conditions As shown in Figure 5, when both sides are irradiated by reflected light at the same time, the open circuit voltage of the bifacial silicon-based heterojunction cell is effectively improved, making the efficiency increase from 7.85% on both sides to 8.67%; when the system is working , The efficiency of the perovskite cell is 16.81%, the efficiency of the double-sided silicon-based heterojunction cell is 8.67%, and the total system efficiency is 25.48%. Compared with the double-sided silicon-based heterojunction cell (efficiency 21.1%), the efficiency Increased by 4.38%
结果说明本发明所提出的基于反射耦合的钙钛矿/硅基异质结电池系统，既可以避免太阳光的反射损失，也可以充分利用双面硅基异质结电池的优势，以此提升光电转换效率。The results show that the perovskite/silicon-based heterojunction battery system based on reflection coupling proposed by the present invention can not only avoid the reflection loss of sunlight, but also make full use of the advantages of the double-sided silicon-based heterojunction battery to improve Photoelectric conversion efficiency.
以上所述仅是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本发明的保护范围。The above are only the preferred embodiments of the present invention. It should be pointed out that for those of ordinary skill in the art, without departing from the principle of the present invention, several improvements and modifications can be made, and these improvements and modifications are also It should be regarded as the protection scope of the present invention.
Claims (8)
- 一种基于反射聚光的双面耦合光伏电池系统，其特征在于：由一个或多个结构单元构成，每个结构单元由一个双面光伏电池(1)和两个反射式光伏电池(2)组成，两个反射式光伏电池(2)分别位于双面光伏电池(1)的两侧，所述反射式光伏电池(2)的受光面朝向双面光伏电池(1)，反射式光伏电池(2)与双面光伏电池(1)之间存在夹角，使入射光经反射式光伏电池(2)反射后能够照射到双面光伏电池(1)的两个面。A double-sided coupling photovoltaic cell system based on reflection and concentration, which is characterized in that it is composed of one or more structural units, and each structural unit consists of a double-sided photovoltaic cell (1) and two reflective photovoltaic cells (2) Composition, two reflective photovoltaic cells (2) are located on both sides of the double-sided photovoltaic cell (1), the light-receiving surface of the reflective photovoltaic cell (2) faces the double-sided photovoltaic cell (1), and the reflective photovoltaic cell ( 2) There is an angle with the double-sided photovoltaic cell (1), so that the incident light can be irradiated to both sides of the double-sided photovoltaic cell (1) after being reflected by the reflective photovoltaic cell (2).
- 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述反射式光伏电池(2)与双面光伏电池(1)之间的夹角为大于0°且小于90°的任意角度。The double-sided coupled photovoltaic cell system based on reflection and concentration according to claim 1, wherein the angle between the reflective photovoltaic cell (2) and the double-sided photovoltaic cell (1) is greater than 0° and Any angle less than 90°.
- 根据权利要求1或2所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述两个反射式光伏电池(2)与双面光伏电池(1)之间的夹角分别为夹角A和夹角B，夹角A和夹角B的大小相同或不同。The double-sided coupling photovoltaic cell system based on reflective concentration according to claim 1 or 2, characterized in that the angles between the two reflective photovoltaic cells (2) and the double-sided photovoltaic cell (1) are respectively It is the included angle A and the included angle B, the sizes of the included angle A and the included angle B are the same or different.
- 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述双面光伏电池(1)为具有双面受光发电能力的电池。The double-sided coupled photovoltaic cell system based on reflection and concentration according to claim 1, characterized in that: the double-sided photovoltaic cell (1) is a battery with a double-sided light-receiving power generation capability.
- 根据权利要求1或4所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述双面光伏电池(1)的双面受光发电时共用同一半导体活性层。The double-sided coupled photovoltaic cell system based on reflection and concentration according to claim 1 or 4, wherein the double-sided photovoltaic cell (1) shares the same semiconductor active layer when receiving light on both sides of the photovoltaic cell (1).
- 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述反射式光伏电池(2)为至少具有单面受光发电能力的电池。The double-sided coupled photovoltaic cell system based on reflection and concentration according to claim 1, characterized in that: the reflective photovoltaic cell (2) is a cell with at least one-sided light-receiving power generation capability.
- 根据权利要求1或6所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述反射式光伏电池(2)为利用金属电极或增反膜中的一种或多种进行光谱反射的电池。The double-sided coupling photovoltaic cell system based on reflection and concentration according to claim 1 or 6, characterized in that: the reflection type photovoltaic cell (2) uses one or more of a metal electrode or a reflection enhancing film. Spectral reflective battery.
- 根据权利要求1所述的基于反射聚光的双面耦合光伏电池系统，其特征在于：所述双面光伏电池(1)的半导体活性层的禁带宽度小于反射式光伏电池(2)的半导体活性层的禁带宽度。The double-sided coupled photovoltaic cell system based on reflective concentration according to claim 1, characterized in that: the semiconductor active layer of the double-sided photovoltaic cell (1) has a band gap smaller than that of the reflective photovoltaic cell (2). Band gap of the active layer.
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